BUV23 Specs and Replacement
Type Designator: BUV23
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 325 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO3
BUV23 Substitution
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BUV23 datasheet
NPN BUV23 POWER SWITCH APPLICATIONS POWER SWITCH APPLICATIONS The BUV23 is silicon multiepitaxial mesa NPN transistors in Jedec TO-3. They are intended for use in power switching appications in military and industrial equipments. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit Collector-Emitter Voltage IB = 0 VCEO 325 V VCBO Collector-Base Voltage IE = 0 400 V VEBO Emitter-Base Vol... See More ⇒
isc Silicon NPN Power Transistor BUV23 DESCRIPTION Low Collector Saturation Voltage- V = 0.8V (Max.) @I = 8A CE(sat) C High Switching Speed High DC Current Gain- h = 15(Min.) @I = 8A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current, high speed, high power applications. Absolute maximum rati... See More ⇒
Order this document MOTOROLA by BUV23/D SEMICONDUCTOR TECHNICAL DATA BUV23 SWITCHMODE Series 30 AMPERES NPN Silicon Power Transistor NPN SILICON POWER . . . designed for high current, high speed, high power applications. METAL TRANSISTOR High DC current gain HFE min. = 15 at IC = 8 A 325 VOLTS Low VCE(sat), VCE(sat) max. = 0.8 V at IC = 8 A 250 WATTS Very fast switc... See More ⇒
Detailed specifications: BUV18, BUV18X, BUV19, BUV1O, BUV20, BUV21, BUV21N, BUV22, 2SD2499, BUV24, BUV25, BUV26, BUV26A, BUV26F, BUV26FI, BUV27, BUV27A
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History: BUP21B
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