BUV23 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUV23
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 325 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 30 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
BUV23 Transistor Equivalent Substitute - Cross-Reference Search
BUV23 Datasheet (PDF)
buv23.pdf
NPN BUV23POWER SWITCH APPLICATIONSPOWER SWITCH APPLICATIONSThe BUV23 is silicon multiepitaxial mesa NPN transistors in Jedec TO-3.They are intended for use in power switching appications in military and industrial equipments.ABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitCollector-Emitter Voltage IB = 0VCEO 325 VVCBO Collector-Base Voltage IE = 0 400 VVEBO Emitter-Base Vol
buv23.pdf
isc Silicon NPN Power Transistor BUV23DESCRIPTIONLow Collector Saturation Voltage-: V = 0.8V (Max.) @I = 8ACE(sat) CHigh Switching SpeedHigh DC Current Gain-: h = 15(Min.) @I = 8AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current, high speed, high powerapplications.Absolute maximum rati
buv23rev.pdf
Order this documentMOTOROLAby BUV23/DSEMICONDUCTOR TECHNICAL DATABUV23SWITCHMODE Series30 AMPERESNPN Silicon Power TransistorNPN SILICONPOWER. . . designed for high current, high speed, high power applications.METAL TRANSISTOR High DC current gain: HFE min. = 15 at IC = 8 A325 VOLTS Low VCE(sat), VCE(sat) max. = 0.8 V at IC = 8 A250 WATTS Very fast switc
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
