BUV26 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUV26
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 85 W
Tensión colector-base (Vcb): 180 V
Tensión colector-emisor (Vce): 90 V
Corriente del colector DC máxima (Ic): 20 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar BUV26
BUV26 Datasheet (PDF)
buv26.pdf
BUV26MEDIUM POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED LOW COLLECTOR EMITTER SATURATION APPLICATIONS SWITCHING REGULATORS MOTOR CONTROL 321DESCRIPTION The BUV26 is a Multiepitaxial Planar NPNTO-220Transistor in TO-220 package. It is intended foruse in high frequency and efficency converters,s
buv26.pdf
isc Silicon NPN Power Transistors BUV26DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 90V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for fast switching applications such as highfrequency and efficiency converters, switching regulatorsand motor control.ABSOLUTE MAXIMU
buv26-d.pdf
BUV26Switchmode Series NPNSilicon Power TransistorDesigned for high-speed applications.Featureshttp://onsemi.com Switchmode Power Supplies High Frequency Converters12 AMPERES Relay DriversNPN SILICON DriverPOWER TRANSISTORS Pb-Free Package is Available*90 VOLTS, 85 WATTSMAXIMUM RATINGS (TJ = 25C unless otherwise noted)MARKINGRating Symbol Value
buv26f af.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUV26F/AF DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 90V(Min)- BUV26F 100V(Min)- BUV26AF High Switching Speed APPLICATIONS Designed for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. ABSOLUTE
buv26a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV26A DESCRIPTION With TO-220C package Low collector saturation voltage Fast switching speed APPLICATIONS For use in high frequency and efficiency converters,switching regulators and motor control PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter
buv26g.pdf
isc Silicon NPN Power Transistors BUV26GDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 90V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for fast switching applications such as highfrequency and efficiency converters, switching regulatorsand motor control.ABSOLUTE MAXIM
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
