Справочник транзисторов. BUV26

 

Биполярный транзистор BUV26 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BUV26
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 85 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 180 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 90 V
   Макcимальный постоянный ток коллектора (Ic): 20 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 10
   Корпус транзистора: TO220

 Аналоги (замена) для BUV26

 

 

BUV26 Datasheet (PDF)

 ..1. Size:57K  st
buv26.pdf

BUV26
BUV26

BUV26MEDIUM POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED LOW COLLECTOR EMITTER SATURATION APPLICATIONS SWITCHING REGULATORS MOTOR CONTROL 321DESCRIPTION The BUV26 is a Multiepitaxial Planar NPNTO-220Transistor in TO-220 package. It is intended foruse in high frequency and efficency converters,s

 ..2. Size:214K  inchange semiconductor
buv26.pdf

BUV26
BUV26

isc Silicon NPN Power Transistors BUV26DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 90V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for fast switching applications such as highfrequency and efficiency converters, switching regulatorsand motor control.ABSOLUTE MAXIMU

 0.1. Size:45K  onsemi
buv26-d.pdf

BUV26
BUV26

BUV26Switchmode Series NPNSilicon Power TransistorDesigned for high-speed applications.Featureshttp://onsemi.com Switchmode Power Supplies High Frequency Converters12 AMPERES Relay DriversNPN SILICON DriverPOWER TRANSISTORS Pb-Free Package is Available*90 VOLTS, 85 WATTSMAXIMUM RATINGS (TJ = 25C unless otherwise noted)MARKINGRating Symbol Value

 0.2. Size:107K  inchange semiconductor
buv26f af.pdf

BUV26
BUV26

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUV26F/AF DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 90V(Min)- BUV26F 100V(Min)- BUV26AF High Switching Speed APPLICATIONS Designed for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. ABSOLUTE

 0.3. Size:117K  inchange semiconductor
buv26a.pdf

BUV26
BUV26

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV26A DESCRIPTION With TO-220C package Low collector saturation voltage Fast switching speed APPLICATIONS For use in high frequency and efficiency converters,switching regulators and motor control PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter

 0.4. Size:214K  inchange semiconductor
buv26g.pdf

BUV26
BUV26

isc Silicon NPN Power Transistors BUV26GDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 90V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for fast switching applications such as highfrequency and efficiency converters, switching regulatorsand motor control.ABSOLUTE MAXIM

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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