BUW12 Todos los transistores

 ..1. Size:214K  inchange semiconductor
 buw12.pdf

isc Silicon NPN Power Transistor BUW12 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min.) CEO(SUS) Low Collector Saturation Voltage- V = 1.5V(Max.)@I = 6A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, fast switching industrial applications. ABSOLU

 ..2. Size:120K  inchange semiconductor
 buw12 buw12a.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW12 BUW12A DESCRIPTION With TO-3PN package High voltage,fast speed Low collector saturation voltage APPLICATIONS Specially intended for operating In industrial applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO

 0.1. Size:81K  philips
 buw12f 1.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BUW12F; BUW12AF Silicon diffused power transistors 1997 Aug 14 Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW12F; BUW12AF DESCRIPTION High-voltage, high-speed, ook, halfpage glass-passivated NPN power transistor in

 0.2. Size:79K  philips
 buw12w buw12aw 1.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BUW12W; BUW12AW Silicon diffused power transistors Product specification 1997 Aug 14 Supersedes data of December 1991 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW12W; BUW12AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 packag

 0.3. Size:79K  philips
 buw12w buw12aw.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BUW12W; BUW12AW Silicon diffused power transistors Product specification 1997 Aug 14 Supersedes data of December 1991 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW12W; BUW12AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 packag

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 buw1215.pdf

BUW1215 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY (> 1500 V) VERY HIGH SWITCHING SPEED APPLICATIONS HORIZONTAL DEFLECTION FOR HIGH-END COLOUR TV AND 21" MONITORS 3 2 DESCRIPTION 1 The BUW1215 is manufactured using Multiepitaxial Mesa technology for cost-effective TO-247 high performance and uses a

 0.5. Size:214K  inchange semiconductor
 buw12a.pdf

isc Silicon NPN Power Transistor BUW12A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min.) CEO(SUS) Low Collector Saturation Voltage- V = 1.5V(Max.)@I = 5A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, fast switching industrial applications. ABSOL

 0.6. Size:213K  inchange semiconductor
 buw12w.pdf

isc Silicon NPN Power Transistor BUW12W DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min.) CEO(SUS) Low Collector Saturation Voltage- V = 1.5V(Max.)@I = 6A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, fast switching industrial applications. ABSOL

 0.7. Size:216K  inchange semiconductor
 buw12f.pdf

isc Silicon NPN Power Transistor BUW12F DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min.) CEO(SUS) Low Collector Saturation Voltage- V = 1.5V(Max.)@I = 6A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, fast switching industrial applications. ABSOL

 0.8. Size:213K  inchange semiconductor
 buw12aw.pdf

isc Silicon NPN Power Transistor BUW12AW DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min.) CEO(SUS) Low Collector Saturation Voltage- V = 1.5V(Max.)@I = 5A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, fast switching industrial applications. ABSO

 0.9. Size:216K  inchange semiconductor
 buw12af.pdf

isc Silicon NPN Power Transistor BUW12AF DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min.) CEO(SUS) Low Collector Saturation Voltage- V = 1.5V(Max.)@I = 5A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, fast switching industrial applications. ABSO