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BUW12 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUW12
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 125 W
   Tensión colector-base (Vcb): 850 V
   Tensión colector-emisor (Vce): 400 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 5
   Paquete / Cubierta: TOP3
 

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BUW12 Datasheet (PDF)

 ..1. Size:214K  inchange semiconductor
buw12.pdf pdf_icon

BUW12

isc Silicon NPN Power Transistor BUW12DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)Low Collector Saturation Voltage-: V = 1.5V(Max.)@I = 6ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, fast switching industrialapplications.ABSOLU

 ..2. Size:120K  inchange semiconductor
buw12 buw12a.pdf pdf_icon

BUW12

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW12 BUW12A DESCRIPTION With TO-3PN package High voltage,fast speed Low collector saturation voltage APPLICATIONS Specially intended for operating In industrial applications PINNING (See Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO

 0.1. Size:81K  philips
buw12f 1.pdf pdf_icon

BUW12

DISCRETE SEMICONDUCTORSDATA SHEETBUW12F; BUW12AFSilicon diffused power transistors1997 Aug 14Product specificationSupersedes data of February 1996File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BUW12F; BUW12AFDESCRIPTIONHigh-voltage, high-speed, ook, halfpageglass-passivated NPN powertransistor in

 0.2. Size:79K  philips
buw12w buw12aw 1.pdf pdf_icon

BUW12

DISCRETE SEMICONDUCTORSDATA SHEETBUW12W; BUW12AWSilicon diffused power transistorsProduct specification 1997 Aug 14Supersedes data of December 1991File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BUW12W; BUW12AWDESCRIPTIONHigh-voltage, high-speed,glass-passivated NPN powertransistor in a SOT429 packag

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: BCX71G | RN1110MFV | MPQ3762 | PBSS4021PT | BD240D | KRA312 | BF759EA

 

 
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