BUW12 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUW12
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 850 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TOP3
BUW12 Transistor Equivalent Substitute - Cross-Reference Search
BUW12 Datasheet (PDF)
buw12.pdf
isc Silicon NPN Power Transistor BUW12DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)Low Collector Saturation Voltage-: V = 1.5V(Max.)@I = 6ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, fast switching industrialapplications.ABSOLU
buw12 buw12a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW12 BUW12A DESCRIPTION With TO-3PN package High voltage,fast speed Low collector saturation voltage APPLICATIONS Specially intended for operating In industrial applications PINNING (See Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO
buw12f 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBUW12F; BUW12AFSilicon diffused power transistors1997 Aug 14Product specificationSupersedes data of February 1996File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BUW12F; BUW12AFDESCRIPTIONHigh-voltage, high-speed, ook, halfpageglass-passivated NPN powertransistor in
buw12w buw12aw 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBUW12W; BUW12AWSilicon diffused power transistorsProduct specification 1997 Aug 14Supersedes data of December 1991File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BUW12W; BUW12AWDESCRIPTIONHigh-voltage, high-speed,glass-passivated NPN powertransistor in a SOT429 packag
buw12w buw12aw.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBUW12W; BUW12AWSilicon diffused power transistorsProduct specification 1997 Aug 14Supersedes data of December 1991File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BUW12W; BUW12AWDESCRIPTIONHigh-voltage, high-speed,glass-passivated NPN powertransistor in a SOT429 packag
buw1215.pdf
BUW1215HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE HIGH VOLTAGE CAPABILITY (> 1500 V) VERY HIGH SWITCHING SPEEDAPPLICATIONS: HORIZONTAL DEFLECTION FOR HIGH-ENDCOLOUR TV AND 21" MONITORS32DESCRIPTION 1The BUW1215 is manufactured usingMultiepitaxial Mesa technology for cost-effectiveTO-247high performance and uses a
buw12a.pdf
isc Silicon NPN Power Transistor BUW12ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)Low Collector Saturation Voltage-: V = 1.5V(Max.)@I = 5ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, fast switching industrialapplications.ABSOL
buw12w.pdf
isc Silicon NPN Power Transistor BUW12WDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)Low Collector Saturation Voltage-: V = 1.5V(Max.)@I = 6ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, fast switching industrialapplications.ABSOL
buw12f.pdf
isc Silicon NPN Power Transistor BUW12FDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)Low Collector Saturation Voltage-: V = 1.5V(Max.)@I = 6ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, fast switching industrialapplications.ABSOL
buw12aw.pdf
isc Silicon NPN Power Transistor BUW12AWDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)Low Collector Saturation Voltage-: V = 1.5V(Max.)@I = 5ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, fast switching industrialapplications.ABSO
buw12af.pdf
isc Silicon NPN Power Transistor BUW12AFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)Low Collector Saturation Voltage-: V = 1.5V(Max.)@I = 5ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, fast switching industrialapplications.ABSO
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
