BUX11N . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUX11N
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 150 W
   Tensión colector-base (Vcb): 220 V
   Tensión colector-emisor (Vce): 180 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 20 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 8 MHz
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO3

Búsqueda de reemplazo de transistor bipolar BUX11N

BUX11N Datasheet (PDF)

..1. Size:206K inchange semiconductor
bux11n.pdf

isc Silicon NPN Power Transistor BUX11NDESCRIPTIONLow Collector Saturation VoltageHigh Switching SpeedHigh Current Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor controlLinear and switching industrial equipmentAbsolute maximum ratings(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Vol

9.1. Size:124K comset
bux11.pdf

NPN BUX11 HIGH CURRENT, HIGH SPEED , HIGH POWER HIGH CURRENT, HIGH SPEED , HIGH POWER TRANSISTORTRANSISTORThe BUX11 is silicon multiepitaxial planar NPN transistors in Jedec TO-3. They are intended for use in switching and linear appications in military and industrial equipments. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value UnitVCEO Collector-Emitter Voltage IB = 0 200 VVCB

9.2. Size:205K inchange semiconductor
bux11.pdf

isc Silicon NPN Power Transistor BUX11DESCRIPTIONLow Collector Saturation Voltage-High Switching SpeedHigh Current Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor controlLinear and switching industrial equipmentAbsolute maximum ratings(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Vol

9.3. Size:215K inchange semiconductor
bux11p.pdf

isc Silicon NPN Power Transistor BUX11PDESCRIPTIONLow Collector Saturation VoltageHigh Switching SpeedHigh Current Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor controlLinear and switching industrial equipmentAbsolute maximum ratings(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Vol

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: CCS2008 | KTC9012 | NSBC144EDP6 | 2N3025

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050