BUX12P Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUX12P

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150 W

Tensión colector-base (Vcb): 300 V

Tensión colector-emisor (Vce): 250 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 20 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 8 MHz

Ganancia de corriente contínua (hFE): 10

Encapsulados: TOP3

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BUX12P datasheet

 ..1. Size:215K  inchange semiconductor
 bux12p.pdf pdf_icon

BUX12P

isc Silicon NPN Power Transistor BUX12P DESCRIPTION Low Collector Saturation Voltage High Switching Speed High Current Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching circuits Motor control Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 300 V CBO

 9.1. Size:63K  st
 bux12.pdf pdf_icon

BUX12P

BUX12 HIGH CURRENT NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS MOTOR CONTROL LINEAR AND SWITCHING INDUSTRIAL 1 EQUIPMENT 2 DESCRIPTION The BUX12 is a silicon multiepitaxial planar NPN TO-3 transistor in Jedec TO-3 metal case, intended for use in switching and linear applications in m

 9.2. Size:205K  inchange semiconductor
 bux12.pdf pdf_icon

BUX12P

isc Silicon NPN Power Transistor BUX12 DESCRIPTION Low Collector Saturation Voltage- High Switching Speed High Current Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching circuits Motor control Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 300 V CBO

Otros transistores... BUX11, BUX11A, BUX11CECC, BUX11N, BUX11P, BUX12, BUX12A, BUX12CECC, 9014, BUX13, BUX13CECC, BUX14, BUX14CECC, BUX15, BUX15CECC, BUX16, BUX16A