BUX12P Datasheet, Equivalent, Cross Reference Search
Type Designator: BUX12P
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TOP3
BUX12P Transistor Equivalent Substitute - Cross-Reference Search
BUX12P Datasheet (PDF)
bux12p.pdf
isc Silicon NPN Power Transistor BUX12PDESCRIPTIONLow Collector Saturation VoltageHigh Switching SpeedHigh Current Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switching circuitsMotor controlAbsolute maximum ratings(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 300 VCBO
bux12.pdf
BUX12HIGH CURRENT NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS MOTOR CONTROL LINEAR AND SWITCHING INDUSTRIAL1EQUIPMENT 2DESCRIPTION The BUX12 is a silicon multiepitaxial planar NPNTO-3transistor in Jedec TO-3 metal case, intended foruse in switching and linear applications in m
bux12.pdf
isc Silicon NPN Power Transistor BUX12DESCRIPTIONLow Collector Saturation Voltage-High Switching SpeedHigh Current Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switching circuitsMotor controlAbsolute maximum ratings(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 300 VCBO
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
