BUX12P Specs and Replacement
Type Designator: BUX12P
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TOP3
BUX12P Substitution
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BUX12P datasheet
isc Silicon NPN Power Transistor BUX12P DESCRIPTION Low Collector Saturation Voltage High Switching Speed High Current Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching circuits Motor control Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 300 V CBO ... See More ⇒
BUX12 HIGH CURRENT NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS MOTOR CONTROL LINEAR AND SWITCHING INDUSTRIAL 1 EQUIPMENT 2 DESCRIPTION The BUX12 is a silicon multiepitaxial planar NPN TO-3 transistor in Jedec TO-3 metal case, intended for use in switching and linear applications in m... See More ⇒
isc Silicon NPN Power Transistor BUX12 DESCRIPTION Low Collector Saturation Voltage- High Switching Speed High Current Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching circuits Motor control Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 300 V CBO ... See More ⇒
Detailed specifications: BUX11, BUX11A, BUX11CECC, BUX11N, BUX11P, BUX12, BUX12A, BUX12CECC, 9014, BUX13, BUX13CECC, BUX14, BUX14CECC, BUX15, BUX15CECC, BUX16, BUX16A
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