BUX47 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUX47

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 107 W

Tensión colector-base (Vcb): 850 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 8.5 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4 MHz

Capacitancia de salida (Cc): 200 pF

Ganancia de corriente contínua (hFE): 5

Encapsulados: TO3

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BUX47 datasheet

 ..1. Size:215K  st
 bux47 bux47a buv47 buv47a bux47 bux47a buv47fi buv47afi.pdf pdf_icon

BUX47

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By I

 ..2. Size:203K  inchange semiconductor
 bux47.pdf pdf_icon

BUX47

isc Silicon NPN Power Transistor BUX47 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, fast switching applications. Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VALUE UNIT Collector-Emitter Voltage V

 0.1. Size:10K  semelab
 bux47smd.pdf pdf_icon

BUX47

BUX47SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 400V IC = 9A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0

 0.2. Size:203K  inchange semiconductor
 bux47a.pdf pdf_icon

BUX47

isc Silicon NPN Power Transistor BUX47A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V (Min) CEO(SUS) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, fast switching applications. Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VALUE UNIT Collector-Emitter Voltage

MOSTRAR MÁS

Otros transistores... BUX42, BUX42A, BUX43, BUX44, BUX45, BUX46, BUX46A, BUX46B, 2N3906, BUX47A, BUX47B, BUX48, BUX48A, BUX48B, BUX48C, BUX49, BUX49S