All Transistors. BUX47 Datasheet

 

BUX47 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BUX47
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 107 W
   Maximum Collector-Base Voltage |Vcb|: 850 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 8.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 4 MHz
   Collector Capacitance (Cc): 200 pF
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TO3

 BUX47 Transistor Equivalent Substitute - Cross-Reference Search

   

BUX47 Datasheet (PDF)

 ..1. Size:215K  st
bux47 bux47a buv47 buv47a bux47 bux47a buv47fi buv47afi.pdf

BUX47
BUX47

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By I

 ..2. Size:203K  inchange semiconductor
bux47.pdf

BUX47
BUX47

isc Silicon NPN Power Transistor BUX47DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, fast switching applications.Absolute maximum ratings(Ta=25)SYMBOL PARAMETER VALUE UNITCollector-Emitter VoltageV

 0.1. Size:10K  semelab
bux47smd.pdf

BUX47

BUX47SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 400V IC = 9A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0

 0.2. Size:203K  inchange semiconductor
bux47a.pdf

BUX47
BUX47

isc Silicon NPN Power Transistor BUX47ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V (Min)CEO(SUS)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, fast switching applications.Absolute maximum ratings(Ta=25)SYMBOL PARAMETER VALUE UNITCollector-Emitter Voltage

 0.3. Size:204K  inchange semiconductor
bux47b.pdf

BUX47
BUX47

isc Silicon NPN Power Transistor BUX47BDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching mode power supplies, CRT scanning,inverters, and other industrial applications.Absolute maximum ratings(Ta=25)SYMBO

 0.4. Size:214K  inchange semiconductor
bux47afi.pdf

BUX47
BUX47

isc Silicon NPN Power Transistor BUX47AFIDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V (Min)CEO(SUS)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, fast switching applications.Absolute maximum ratings(Ta=25)SYMBOL PARAMETER VALUE UNITCollector-Emitter Voltage

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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