BUX47B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUX47B
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 125 W
   Tensión colector-base (Vcb): 850 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 9 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 4 MHz
   Capacitancia de salida (Cc): 200 pF
   Ganancia de corriente contínua (hfe): 5
   Paquete / Cubierta: TO3

Búsqueda de reemplazo de transistor bipolar BUX47B

BUX47B Datasheet (PDF)

..1. Size:204K inchange semiconductor
bux47b.pdf

isc Silicon NPN Power Transistor BUX47BDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching mode power supplies, CRT scanning,inverters, and other industrial applications.Absolute maximum ratings(Ta=25)SYMBO

9.1. Size:215K st
bux47 bux47a buv47 buv47a bux47 bux47a buv47fi buv47afi.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By I

9.2. Size:10K semelab
bux47smd.pdf

BUX47SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 400V IC = 9A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0

9.3. Size:203K inchange semiconductor
bux47a.pdf

isc Silicon NPN Power Transistor BUX47ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V (Min)CEO(SUS)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, fast switching applications.Absolute maximum ratings(Ta=25)SYMBOL PARAMETER VALUE UNITCollector-Emitter Voltage

9.4. Size:203K inchange semiconductor
bux47.pdf

isc Silicon NPN Power Transistor BUX47DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, fast switching applications.Absolute maximum ratings(Ta=25)SYMBOL PARAMETER VALUE UNITCollector-Emitter VoltageV

9.5. Size:214K inchange semiconductor
bux47afi.pdf

isc Silicon NPN Power Transistor BUX47AFIDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V (Min)CEO(SUS)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, fast switching applications.Absolute maximum ratings(Ta=25)SYMBOL PARAMETER VALUE UNITCollector-Emitter Voltage

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: PBSS3540MB | 2N402

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