BUX47B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUX47B
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 125 W
Tensión colector-base (Vcb): 850 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 9 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4 MHz
Capacitancia de salida (Cc): 200 pF
Ganancia de corriente contínua (hfe): 5
Paquete / Cubierta: TO3
Búsqueda de reemplazo de transistor bipolar BUX47B
BUX47B Datasheet (PDF)
bux47b.pdf
isc Silicon NPN Power Transistor BUX47BDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching mode power supplies, CRT scanning,inverters, and other industrial applications.Absolute maximum ratings(Ta=25)SYMBO
bux47 bux47a buv47 buv47a bux47 bux47a buv47fi buv47afi.pdf
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bux47smd.pdf
BUX47SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 400V IC = 9A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0
bux47a.pdf
isc Silicon NPN Power Transistor BUX47ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V (Min)CEO(SUS)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, fast switching applications.Absolute maximum ratings(Ta=25)SYMBOL PARAMETER VALUE UNITCollector-Emitter Voltage
bux47.pdf
isc Silicon NPN Power Transistor BUX47DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, fast switching applications.Absolute maximum ratings(Ta=25)SYMBOL PARAMETER VALUE UNITCollector-Emitter VoltageV
bux47afi.pdf
isc Silicon NPN Power Transistor BUX47AFIDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V (Min)CEO(SUS)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, fast switching applications.Absolute maximum ratings(Ta=25)SYMBOL PARAMETER VALUE UNITCollector-Emitter Voltage
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
