BUX66B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUX66B
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 35 W
Tensión colector-base (Vcb): 350 V
Tensión colector-emisor (Vce): 300 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 15 MHz
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: TO66
Búsqueda de reemplazo de transistor bipolar BUX66B
BUX66B Datasheet (PDF)
bux66b bux66c.pdf
isc Silicon PNP Power Transistors BUX66B/CDESCRIPTIONContunuous Collector Current-I = -2ACPower Dissipation-P = 35W @T = 25D CCollector-Emitter Saturation Voltage-: V )= -2.5V(Max)@ I = -1ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching and linear amplifier appli-cation
bux66 a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUX66/A DESCRIPTION Contunuous Collector Current-IC= -2A Power Dissipation-PD= 35W @TC= 25 Collector-Emitter Saturation Voltage- : VCE(sat)= -2.5V(Max)@ IC = -1A APPLICATIONSDesigned for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, s
bux66 bux66a.pdf
isc Silicon PNP Power Transistors BUX66/ADESCRIPTIONContunuous Collector Current-I = -2ACPower Dissipation-P = 35W @T = 25D CCollector-Emitter Saturation Voltage-: V )= -2.5V(Max)@ I = -1ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching and linear amplifier appli-cation f
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
