BUX66B Datasheet, Equivalent, Cross Reference Search
Type Designator: BUX66B
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 35 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO66
BUX66B Transistor Equivalent Substitute - Cross-Reference Search
BUX66B Datasheet (PDF)
bux66b bux66c.pdf
isc Silicon PNP Power Transistors BUX66B/CDESCRIPTIONContunuous Collector Current-I = -2ACPower Dissipation-P = 35W @T = 25D CCollector-Emitter Saturation Voltage-: V )= -2.5V(Max)@ I = -1ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching and linear amplifier appli-cation
bux66 a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUX66/A DESCRIPTION Contunuous Collector Current-IC= -2A Power Dissipation-PD= 35W @TC= 25 Collector-Emitter Saturation Voltage- : VCE(sat)= -2.5V(Max)@ IC = -1A APPLICATIONSDesigned for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, s
bux66 bux66a.pdf
isc Silicon PNP Power Transistors BUX66/ADESCRIPTIONContunuous Collector Current-I = -2ACPower Dissipation-P = 35W @T = 25D CCollector-Emitter Saturation Voltage-: V )= -2.5V(Max)@ I = -1ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching and linear amplifier appli-cation f
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
