BUX87P . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUX87P
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 42 W
Tensión colector-base (Vcb): 1000 V
Tensión colector-emisor (Vce): 450 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10 MHz
Ganancia de corriente contínua (hfe): 26
Paquete / Cubierta: TO126
Búsqueda de reemplazo de transistor bipolar BUX87P
BUX87P Datasheet (PDF)
bux87-1100 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX87-1100 GENERAL DESCRIPTIONHigh voltage, high speed,low capacitance npn power transistor in a SOT78 envelope intended for use in thedynamic focus circuit of televisions and monitors.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak value VBE = 0 V - 11
bux87.pdf
BUX87High voltage NPN power transistorFeatures High voltage capability (450 V VCEO) Minimum lot-to-lot spread for reliable operation High DC current gainApplications12 Flyback and forward single transistor low 3power convertersSOT-32DescriptionThe BUX87 is manufactured using high voltage multi-epitaxial planar technology for high Figure 1. Internal s
bux87.pdf
INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor BUX87DESCRIPTIONHigh Voltage capability: V = 450V(Min)CE(sus)Minimum lot-to-lot spread for reliable operationHigh DC current gainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFly back and Forward single transistor lowPower converters
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BSP16 | AD313 | MD1128
History: BSP16 | AD313 | MD1128
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