BUX87P Datasheet, Equivalent, Cross Reference Search
Type Designator: BUX87P
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 42 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 26
Noise Figure, dB: -
Package: TO126
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BUX87P Datasheet (PDF)
bux87-1100 1.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX87-1100 GENERAL DESCRIPTIONHigh voltage, high speed,low capacitance npn power transistor in a SOT78 envelope intended for use in thedynamic focus circuit of televisions and monitors.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak value VBE = 0 V - 11
bux87.pdf

BUX87High voltage NPN power transistorFeatures High voltage capability (450 V VCEO) Minimum lot-to-lot spread for reliable operation High DC current gainApplications12 Flyback and forward single transistor low 3power convertersSOT-32DescriptionThe BUX87 is manufactured using high voltage multi-epitaxial planar technology for high Figure 1. Internal s
bux87.pdf

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor BUX87DESCRIPTIONHigh Voltage capability: V = 450V(Min)CE(sus)Minimum lot-to-lot spread for reliable operationHigh DC current gainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFly back and Forward single transistor lowPower converters
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .