BUX87P
Datasheet, Equivalent, Cross Reference Search
Type Designator: BUX87P
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 42
W
Maximum Collector-Base Voltage |Vcb|: 1000
V
Maximum Collector-Emitter Voltage |Vce|: 450
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.5
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 10
MHz
Forward Current Transfer Ratio (hFE), MIN: 26
Noise Figure, dB: -
Package:
TO126
BUX87P
Transistor Equivalent Substitute - Cross-Reference Search
BUX87P
Datasheet (PDF)
9.1. Size:43K philips
bux87-1100 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX87-1100 GENERAL DESCRIPTIONHigh voltage, high speed,low capacitance npn power transistor in a SOT78 envelope intended for use in thedynamic focus circuit of televisions and monitors.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak value VBE = 0 V - 11
9.2. Size:200K st
bux87.pdf
BUX87High voltage NPN power transistorFeatures High voltage capability (450 V VCEO) Minimum lot-to-lot spread for reliable operation High DC current gainApplications12 Flyback and forward single transistor low 3power convertersSOT-32DescriptionThe BUX87 is manufactured using high voltage multi-epitaxial planar technology for high Figure 1. Internal s
9.4. Size:212K inchange semiconductor
bux87.pdf
INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor BUX87DESCRIPTIONHigh Voltage capability: V = 450V(Min)CE(sus)Minimum lot-to-lot spread for reliable operationHigh DC current gainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFly back and Forward single transistor lowPower converters
Datasheet: 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.