C1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

UMC1N / FMCTransistorsTransistorsUMD12N / FMC

HGTH12N40C1D, HGTH12N40E1D,S E M I C O N D U C T O RHGTH12N50C1D, HGTH12N50E1D12A, 400V and 500V N-Channel IGBTswith Anti-Parallel Ultrafast DiodesApril 1995Features PackageJEDEC TO-218AC 12A, 400V and 500V VCE(ON): 2.5V Max.EMITTER TFALL: 1s, 0.5s COLLECTORGATE Low On-State Voltage Fast Switching SpeedsCOLLECTOR High Input Impedance(FLANG

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC110SN10A N-Channel Power MOSFETPDFN 56-8L V(BR)DSS RDS(onTYP ID 3.4m@10V100V 110A4.5m@4.5VDESCRIPTION The CJAC110SN10A uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEA

MCAC10H03Electrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 30 VIGSS VDS=0V, VGS =20VGate-Source Leakage Current 100 nAIDSS VDS=30V, VGS=0VZero Gate Voltage Drain Current 1 AVGS(th) VDS=VGS, ID=250A1.2 1.7 2.5 VGate-Thresh

HYG045N03LA1C1N-Channel Enhancement Mode MOSFETFeature Pin Description 30V/50ARDS(ON)=3.9 m (typ.) @VGS = 10VRDS(ON)=5.2 m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices AvailablePin1(RoHS Compliant)Applications Switching Application Battery ProtectionSingle N-Channel MOSFETOrdering and Marking Info

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L-B Plastic-Encapsulate MOSFETS CJAC100SN08U N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L-B 80 V100A3.0m@10VDESCRIPTION These N-Channel enhancement mode power field effect transistors areusing SGT technology.This advanced technology has been especiallytailored to minimize on-state resistance, pr

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC110N03 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 1.8m@10V30 V110A3.5m@4.5VDESCRIPTION FEATURES

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC110SN10 N-Channel Power MOSFETPDFN 56-8L V(BR)DSS RDS(on)TYP ID 100V 4.3m@10V 110ADESCRIPTION The CJAC110SN10 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES Hig

HGTP10N40C1, 40E1, 50C1, 50E1,S E M I C O N D U C T O R HGTH12N40C1, 40E1, 50C1, 50E110A, 12A,400V and 500V N-Channel IGBTsApril 1995Features PackagesHGTH-TYPES JEDEC TO-218AC 10A and 12A, 400V and 500VEMITTER VCE(ON): 2.5V Max.COLLECTOR TFI: 1s, 0.5sGATECOLLECTOR(FLANGE) Low On-State Voltage Fast Switching Speeds High Input Impedance

MCAC16N03Features Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"N-CHANNEL Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)MOSFETMaximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperature Range:

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC100P03 P-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 2.3m@-10V-30 V-100A3.4m@-4.5VDESCRIPTION The CJAC100P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATU

BSC110N15NS5MOSFETSuperSO8OptiMOSTM 5 Power-Transistor, 150 V5867Features 7685 N-channel, normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 150 C operating temperature4 Pb-free lead plating; RoHS compliant132 2 Qualified according to JEDEC1) for target application3 14 Ideal for hig

NTTFS4C10NPower MOSFET30 V, 44 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseswww.onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliant7.4 mW @ 10 VApplications30 V 44 A11 mW @ 4.5

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB56-8L Plastic-Encapsulate MOSFETS CJAC13TH06 N-Channel Power MOSFETV(BR)DSS RDS(on)TYP ID PDFNWB56-8L 2.2m@10V60V 130A3.0m@4.5VDESCRIPTION The CJAC13TH06 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURE

MSJAC11N65YElectrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 650 VIGSS VDS=0V, VGS =30VGate-Source Leakage Current 100 nAVDS=650V, VGS=0V1IDSSZero Gate Voltage Drain Current AVDS=650V, VGS=0V, TJ=150C100VGS(th) VDS=

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC150N03 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 1.6m@10V30 V150A2.1m@4.5VDESCRIPTION 15 FEATURES

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PQFN 56-8L Plastic-Encapsulate MOSFETS CJAC10TH10 N-Channel Power MOSFETV(BR)DSS RDS(on)MAX ID PQFN 56-8L 8m@10V100V 100A10m@4.5VDESCRIPTION The CJAC10TH10 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES AP

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB56-8L Plastic-Encapsulate MOSFETS CJAC10H0 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB56-8L 2.0m@4.5V20 V100A2.4m@2.5VDESCRIPTION The CJAC10H02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FE

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC144EEFNPN resistor-equipped transistor1999 May 27Preliminary specificationPhilips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC144EEFFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification of circuit design 3handbook, halfpage3R1 Reduces number of components

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC114TSNPN resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114TSFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit desi

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTC124ETNPN resistor-equipped transistor1999 Apr 16Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124ETFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3handbook, 4 columns Simplification of circuit design3

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby C106/DC106Silicon Controlled Rectifier*SeriesReverse Blocking Triode Thyristors*Motorola preferred devices. . . Glassivated PNPN devices designed for high volume consumer applications suchas temperature, light, and speed control; process and remote control, and warningsystems where reliability of operation is impo

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC114TKNPN resistor-equipped transistor1998 May 19Product specificationSupersedes data of 1997 May 28File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114TKFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit desi

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC114TUNPN resistor-equipped transistor1999 Apr 16Preliminary specificationSupersedes data of 1998 May 19Philips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC114TUFEATURES Built-in bias resistor R1 (typ. 10 k)3handbook, 4 columns Simplification of circuit design3

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC143EKNPN resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jun 16File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143EKFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each)3 Simplificati

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC124ESNPN resistor-equipped transistor1998 May 08Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124ESFEATURES Built-in bias resistors R1 and R2(typ. 22 k each) Simplification o

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC144WTNPN resistor-equipped transistor1999 May 25Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144WTFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 47 k and 22 kPIN DESCRIPTIONrespectively)1 base/input

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby DTC114YE/DDTC114YEPreliminary Data SheetBias Resistor TransistorNPN Silicon Surface Mount Transistor with3Monolithic Bias Resistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor with a21monolithic bias network consisting of two resistors; a series base resistor and abaseemitter resis

DISCRETE SEMICONDUCTORSDATA SHEEThalfpageM3D088PDTC114ETNPN resistor-equipped transistor1999 Apr 15Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3dbook, 4 columns3 Simplification of circuit designR1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby DTC114YE/DDTC114YEPreliminary Data SheetBias Resistor TransistorNPN Silicon Surface Mount Transistor with3Monolithic Bias Resistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor with a21monolithic bias network consisting of two resistors; a series base resistor and abaseemitter resis

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC123JEFNPN resistor-equipped transistor1999 May 27Preliminary specificationPhilips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC123JEFFEATURES Built-in bias resistors R1 and R2(typ. 2.2 k and 47 krespectively)3handbook, halfpage3 Simplification of circuit designR11 Red

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC143ZKNPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143ZKFEATURES Built-in bias resistors R1 and R2 (typ. 4.7 and 47 krespectively) Simplification of circuit design33

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114TENPN resistor-equipped transistor1998 Aug 03Product specificationSupersedes data of 1997 Jul 11File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114TEFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design Reduces

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC144EUNPN resistor-equipped transistor1999 Apr 16Objective specificationSupersedes data of 1998 May 18Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTC144EUFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3handbook, 4 columns Simplification of circuit desi

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC123JENPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 Aug 03Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123JEFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 krespectively) Simplification of circuit designhandbook, halfpage33

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC143XTNPN resistor-equipped transistor1999 Apr 20Product specificationPhilips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143XTFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k and 10 k3handbook, 4 columnsrespectively)3 Simplification of circuit designR11

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC144ESNPN resistor-equipped transistor1998 May 19Product specificationSupersedes data of 1997 Jul 01File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144ESFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification o

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC114YTNPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114YTFEATURES Built-in bias resistors R1 and R2 (typ. 10 and 47 krespectively) Simplification of circuit design3 Re

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC114EUNPN resistor-equipped transistor1999 Apr 16Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EUFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3handbook, 4 columns Simplification of circuit design

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC16116/DAmplifier TransistorsPNP SiliconBC161-16COLLECTOR32BASE1EMITTERMAXIMUM RATINGS321Rating Symbol Value UnitCASE 7904, STYLE 1CollectorEmitter Voltage VCEO 60 VdcTO39 (TO205AD)CollectorBase Voltage VCBO 60 VdcEmitterBase Voltage VEBO 5.0 VdcCollector Curren

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC143EUNPN resistor-equipped transistor1999 Apr 14Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143EUFEATURES Built-in bias resistors R1 and R2typ. 4.7 k each)3handbook, 4 columns Simplification of circuit design

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTC143TTNPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 May 29Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143TTFEATURES PINNING Built-in bias resistor R1 (typ. 4.7 k)PIN DESCRIPTION Simplification of circuit design1 base/input

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC124EKNPN resistor-equipped transistor1998 May 08Product specificationSupersedes data of 1997 Sep 08File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124EKFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3 Simplificatio

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC143XENPN resistor-equipped transistorProduct specification 1999 May 21Supersedes data of 1998 May 29Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143XEFEATURES Built-in bias resistors R1 and R2 (typ. 4.7 k and 10 krespectively) Simplification of circuit designhandbook, halfpage

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114EENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EEFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 10 k each)PIN DESCRIPTION Simplification of circuit design1 base/input

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC143EENPN resistor-equipped transistor1998 Jul 31Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143EEFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each) Simplification of circuit desig

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC124EUNPN resistor-equipped transistor1999 Apr 16Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124EUFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3handbook, 4 columns Simplification of circuit design

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC114YUNPN resistor-equipped transistor1999 Apr 20Product specificationPhilips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114YUFEATURES Built-in bias resistors R1 and R2(typ. 10 k and 47 k respectively)3handbook, 4 columns3 Simplification of circuit designR1 R

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC124XEFNPN resistor-equipped transistor1999 May 18Preliminary specificationSupersedes data of 1998 Nov 11Philips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC124XEFFEATURES Power dissipation comparable to SOT23 Built-in bias resistors R1 and R2 (typ. 22 k and 47 krespectively)3ha

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTC114TTNPN resistor-equipped transistor1999 Apr 16Objective specificationSupersedes data of 1998 May 19Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTC114TTFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design3handbook, 4 columns Reduces

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC182/DAmplifier TransistorsBC182,A,BNPN SiliconBC183BC184COLLECTOR12BASE3EMITTER1MAXIMUM RATINGS23BC BC BC182 183 184Rating Symbol UnitCASE 2904, STYLE 17TO92 (TO226AA)CollectorEmitter Voltage VCEO 50 30 30 VdcCollectorBase Voltage VCBO 60 45 45 VdcEmitterBase Voltage

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114ESNPN resistor-equipped transistor1998 Nov 26Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114ESFEATURES Built-in bias resistors R1 and R2(typ. 10 k each) Simplification of circuit designhandbook, halfpage2 Reduces numbe

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC123JTNPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123JTFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 krespectively) Simplification of circuit design

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC144WUNPN resistor-equipped transistor1999 May 25Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144WUFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 47 k and 22 kPIN DESCRIPTIONrespectively)1 base/input

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC114EKNPN resistor-equipped transistor1998 Nov 26Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EKFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplification of circuit design3 Reduces number

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby DTC114TE/DDTC114TEPreliminary Data SheetBias Resistor TransistorNPN Silicon Surface Mount Transistor with3Monolithic Bias Resistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor with a21monolithic bias network consisting of two resistors; a series base resistor and abaseemitter resis

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC123ETNPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123ETFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k each) Simplification of circuit design Reduces number of co

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC124XENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 Sep 21Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124XEFEATURES Built-in bias resistors R1 and R2 (typ. 22 k and 47 krespectively) Simplification of circuit designhandbook, halfpage

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC124EENPN resistor-equipped transistor1998 Jul 31Product specificationSupersedes data of 1997 Jul 11File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124EEFEATURES Built-in bias resistors R1 and R2(typ. 22 k each) Simplification of circuit design

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC143ESNPN resistor-equipped transistor1998 May 20Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143ESFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each) Simplification

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114YENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114YEFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 10 k and 47 kPIN DESCRIPTIONrespectively)1 base/input Simplification

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC143ZTNPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143ZTFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 4.7 k and 47 kPIN DESCRIPTIONrespectively)1 base/input

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC144EKNPN resistor-equipped transistor1998 May 19Objective specificationSupersedes data of 1997 Jul 14File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTC144EKFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3ndbook, 4 col

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC114EEFNPN resistor-equipped transistor1999 May 31Product specificationSupersedes data of 1998 Nov 11Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EEFFEATURES Power dissipation comparable toSOT23 Built-in bias resistors R1 and R23handbook, halfpage(typ. 10 k each) 3R1

MOTOROLASEMICONDUCTOR TECHNICAL DATAC122( )1Silicon Controlled RectifiersReverse Blocking Triode Thyristors Series. . . designed primarily for full-wave ac control applications, such as motor controls,heating controls and power supplies; or wherever half-wave silicon gate-controlled,solid-state devices are needed.SCRs Glass Passivated Junctions and Center Gate Fire for Grea

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby DTC114TE/DDTC114TEPreliminary Data SheetBias Resistor TransistorNPN Silicon Surface Mount Transistor with3Monolithic Bias Resistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor with a21monolithic bias network consisting of two resistors; a series base resistor and abaseemitter resis

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC144EENPN resistor-equipped transistor1998 Jul 16Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144EEFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification of circuit design

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC143ETNPN resistor-equipped transistor1999 Apr 15Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143ETFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each)3handbook, 4 columns Simplification of circuit design

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC144ETNPN resistor-equipped transistor1999 Apr 16Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144ETFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3handbook, 4 columns Simplification of circuit design

PD -91734BIRG4BC10KDINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODEUltraFast IGBTCFeatures High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15VVCE(on) typ. = 2.39V Combines low conduction losses with highG switching speed Tighter parameter distribut

PD- 91825IRG4CC10KBIRG4CC10KB IGBT Die in Wafer FormC600 VSize 1Ultra-Fast SpeedG Short Circuit Rated6" WaferEElectrical Characteristics ( Wafer Form )Parameter Description Guaranteed (Min/Max) Test ConditionsVCE (on) Collector-to-Emitter Saturation Voltage 4.5V Max. IC = 1.5A, TJ = 25C, VGE = 15VV(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, IC

PD- 91732BIRG4RC10Swww.irf.com 107/04/07IRG4RC10S1.82 www.irf.comIRG4RC10Swww.irf.com 3IRG4RC10S4 www.irf.comIRG4RC10Swww.irf.com 5IRG4RC10S6 www.irf.comIRG4RC10Swww.irf.com 7IRG4RC10SD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (TO-252AA) Part Marking InformationNote: For the most current drawing please refer

PD - 94255IRG4BC10SD-SIRG4BC10SD-LINSULATED GATE BIPOLAR TRANSISTOR WITH Standard SpeedULTRAFAST SOFT RECOVERY DIODECoPack IGBTFeaturesC Extremely low voltage drop 1.1Vtyp. @ 2A S-Series: Minimizes power dissipation at up to 3VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.VCE(on) typ. = 1.10V Very Tight Vce(on) distrib

PD - 91786BIRG4BC10S Standard Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeaturesC Extremely low voltage drop; 1.1V typical at 2A S-Speed: Minimizes power dissipation at up to 3 VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives, up to 2KHz inVCE(on) typ. = 1.10V Chopper Applications G Very Tight Vce(on) distribution Indust

PD - 94410IRGC15B60KBDie in Wafer FormFeaturesFeaturesFeaturesFeaturesFeatures600VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 15A Low VCE(on)VCE(on) typ.=1.8V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark Effici

PD - 93776IRFC1404HEXFET Power MOSFET Die in Wafer FormD40VSize 4.0RDS(on)=0.0029G6" WaferSElectrical Characteristics (Wafer Form)Parameter Description Guaranteed (Min/Max) Test ConditionsV(BR)DSS Drain-to-Source Breakdown Voltage 40V Min. VGS = 0V, ID = 250ARDS(on) Static Drain-to-Source On-Resistance 2.9m Max. VGS = 10V, ID = 45AVGS(th) Gate Threshold Vol

PD-91678BIRG4RC10SD Standard Speed CoPackINSULATED GATE BIPOLAR TRANSISTOR WITHIGBTULTRAFAST SOFT RECOVERY DIODECFeatures Extremely low voltage drop 1.1V(typ) @ 2AVCES = 600V S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4VCE(on) typ. = 1.10V KHz in brushless DC drives.G Tight parameter distribution IGBT

D IRG4BC10KShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTORUltraFast IGBTFeaturesC Short Circuit Rated UltraFast: Optimized for highVCES = 600V operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15V Generation 4 IGBT design provides higher efficiencyVCE(on) typ. = 2.39VG than Generation 3 Industry standard TO-220

PD- 91827IRG4CC10SBIRG4CC10SB IGBT Die in Wafer FormC600 VSize 1Standard SpeedG6" WaferEElectrical Characteristics ( Wafer Form )Parameter Description Guaranteed (Min/Max) Test ConditionsVCE (on) Collector-to-Emitter Saturation Voltage 4.5V Max. IC = 1.5A, TJ = 25C, VGE = 15VV(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, ICES = 250A, VGE = 0V

PD - 94255IRG4BC10SD-SIRG4BC10SD-LINSULATED GATE BIPOLAR TRANSISTOR WITH Standard SpeedULTRAFAST SOFT RECOVERY DIODECoPack IGBTFeaturesC Extremely low voltage drop 1.1Vtyp. @ 2A S-Series: Minimizes power dissipation at up to 3VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.VCE(on) typ. = 1.10V Very Tight Vce(on) distrib

PD - 94083AIRG4BC15UD-SIRG4BC15UD-LINSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 600V UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switchingVCE(on) typ. = 2.02V IGBT Co-packaged with ultra-soft-recoveryG antiparallel diode Industry standard D2Pak & TO-262 packages@VGE = 15V,

PD 91736AIRG4RC10KDINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODEUltraFast IGBTCFeatures Short Circuit Rated UltraFast: Optimized forVCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15VVCE(on) typ. = 2.39V Generation 4 IGBT design provides tighterG parameter distributio

PD - 93874IRGC100B120KBDie in Wafer FormFeaturesFeaturesFeaturesFeaturesFeatures1200VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 100A Low VCE(on)VCE(on) typ.= 2.2V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark E

PD - 94562IRGC16B120KBDie in Wafer FormFeatures1200VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)=15A Low VCE(on)VCE(on) typ.=2.55V@ 10s Short Circuit CapabilityIC(nom) @ 25C Square RBSOA Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark Efficiency for Motor Control ApplicationsE1

PD - 94618AIRGC100B60KBDie in Wafer FormFeatures600VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)=100A Low VCE(on)VCE(on) typ.=1.9V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark Efficiency for Motor Control ApplicationsE

PD - 97759IRG7RC10FDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHCVCES = 600VULTRAFAST SOFT RECOVERY DIODEIC = 9.0A, TC = 100CFeatures Low VCE(on)tsc > 3s, Tjmax = 150CG Zero VCE(on) temperature coefficient 3s Short Circuit CapabilityVCE(on) typ. = 1.6VE Ultra Fast Soft Recovery Co-pak Diode@ IC = 5A Square RBSOAn-channelBenefits Ben

PD - 94716IRGC100B60UBDie in Wafer FormFeatures600VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)=100A Low VCE(on)VCE(on) typ. = 2.8V 10s Short Circuit Capability Square RBSOA @ IC(nom) @ 25C Positive VCE(on) Temperature CoefficientUPS IGBTGBenefitsShort Circuit Rated Benchmark Efficiency for UPS and Welding ApplicationsE150mm Waf

PD - 96363IRG7SC12FPbFINSULATED GATE BIPOLAR TRANSISTORCFeaturesVCES = 600V Low VCE (ON) Trench IGBT Technology Maximum Junction temperature 150 CIC = 8A, TC = 100C 3 S short circuit SOA Square RBSOA GtSC 3s, TJ(max) = 150C Positive VCE (ON) Temperature co-efficientE Tight parameter distributionVCE(on) typ. = 1.60V Lead Free Pac

PD -91784BIRG4BC10SD Standard Speed CoPackINSULATED GATE BIPOLAR TRANSISTOR WITHIGBTULTRAFAST SOFT RECOVERY DIODECFeatures Extremely low voltage drop 1.1Vtyp. @ 2AVCES = 600V S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.VCE(on) typ. = 1.10V Very Tight Vce(on) distribution G IGB

PD - 93866AIRGC15B120KBDie in Wafer FormFeaturesFeaturesFeaturesFeaturesFeatures1200VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)=15A Low VCE(on)VCE(on) typ.=2.46V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark Eff

PD 91677BIRG4BC10UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz inVCE(on) typ. = 2.15Vresonant modeG Generation 4 IGBT design provides tighter@VGE = 15V, IC = 5.0A parameter

PD- 91871IRLC1304HEXFET Power MOSFET Die in Wafer FormD40 VSize 4.6Rds(on)=0.020G6" WaferSElectrical Characteristics ( Wafer Form )Parameter Description Guaranteed (Min/Max) Test ConditionsV(BR)DSS Drain-to-Source Breakdown Voltage 40V Min. VGS = 0V, ID = 250ARDS(on) Static Drain-to-Source On-Resistance 0.020 Max. VGS = 10V, ID = 5.0A0.030 Max. VGS = 4.5

PD - 93873BIRGC100B120UBDie in Wafer Form1200VFeaturesC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 100A Low VCE(on)VCE(on) typ.= 3.1V @ 10s Short Circuit CapabilityIC(nom) @ 25C Square RBSOA Positive VCE(on) Temperature Coefficient UltraFast IGBTGBenefitsShort Circuit RatedE Benchmark Efficiency above 20KHz150mm Wafer

IRGC15B120UBPD - 93865AIRGC15B120UBDie in Wafer FormFeaturesFeaturesFeaturesFeaturesFeatures1200VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)=15A UltraFastVCE(on) typ.=3.67V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientUltraFast IGBTGBenefitsShort Circuit Ra

PD- 91826IRG4CC10UBIRG4CC10UB IGBT Die in Wafer FormC600 VSize 1Ultra-Fast SpeedG6" WaferEElectrical Characteristics ( Wafer Form )Parameter Description Guaranteed (Min/Max) Test ConditionsVCE (on) Collector-to-Emitter Saturation Voltage 4.5V Max. IC = 1.5A, TJ = 25C, VGE = 15VV(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, ICES = 250A, VGE = 0

PD - 94083AIRG4BC15UD-SIRG4BC15UD-LINSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 600V UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switchingVCE(on) typ. = 2.02V IGBT Co-packaged with ultra-soft-recoveryG antiparallel diode Industry standard D2Pak & TO-262 packages@VGE = 15V,

PD 91571AI UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeatures CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for medium operating VCES = 600V frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode).VCE(on) typ. = 2.15V Generation 4 IGBT design provides tighter parameter distribution a

PD - 94657IRGC16B60KBDie in Wafer FormFeatures600VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 15A Low VCE(on)VCE(on) typ.=1.8V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark Efficiency for Motor Control ApplicationsE1

PD - 94409IRGC10B60KBDie in Wafer FormFeaturesFeaturesFeaturesFeaturesFeatures600VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 10A Low VCE(on)VCE(on) typ.=1.8V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark Effici

PD - 91572AIRG4RC10UUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures CFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operatingVCES = 600V frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode) Generation 4 IGBT design provides tighterVCE(on) typ. = 2.15VG parameter distribution and higher efficiency than previous

PD 91735AIRG4RC10KShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTORUltraFast IGBTFeaturesC Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit VCES = 600V Rated to 10s @ 125C, VGE = 15V Generation 4 IGBT design provides higher efficiencyVCE(on) typ. = 2.39VG than Generation 3 Industry standard TO-252AA

PD - 93873IRGC100B120UBDie in Wafer FormFeaturesFeaturesFeaturesFeaturesFeatures1200VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 100A Low VCE(on)VCE(on) typ.= 3.1V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientUltraFast IGBTGBenefitsShort Circuit Rated Benchmark Effic

PD - 94082AIRG4BC15UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 600V UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switchingVCE(on) typ. = 2.02V IGBT Co-packaged with ultra-soft-recoveryG antiparallel diode Industry standard TO-220AB package@VGE = 15V, IC = 7.8AEn-channe

PD- 94151AIRG4BC15MDShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHFast IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Rugged: 10sec short circuit capable at VGS = 15VVCES = 600V Low VCE(on) for 4 to 10kHz applications IGBT co-packaged with ultra-soft-recovery anti-parallel diodes VCE(on) typ. = 1.88VG Indus

PD - 93765IRG4IBC10UDINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast Co-Pack IGBTULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures UltraFast: Optimized for high operating up toVCE(on) typ. = 2.15V 80 kHz in hard switching, > 200 kHz in resonant modeG Generation 4 IGBT design provides tighter@VGE = 15V, IC = 5.0A parameter distribution and higher efficiency th

PD - 94060IRGC14C40LBIgnition IGBTIRGC14C40LCIRGC14C40LDDie in Wafer FormIGBT with on-chip Gate-Emitter and Gate-Collector clampsFeaturesNOTES: 1) Part number IRGC14C40LB are die in wafer formprobed and uncut; IRGC14C40LC are die on film probed andMost Rugged in Industrycut; and IRGC14C40LD are probed die in wafle pack. 2) Refer-Logic-Level Gate Driveence package

DISCRETE SEMICONDUCTORS DATA SHEETPDTC124T seriesNPN resistor-equipped transistors; R1 = 22 k, R2 = openProduct data sheet 2004 Aug 13Supersedes data of 2004 Apr 06NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC124T seriesR1 = 22 k, R2 = openFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT S

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC144EEFNPN resistor-equipped transistor1999 May 27Preliminary specificationPhilips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC144EEFFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification of circuit design 3handbook, halfpage3R1 Reduces number of components

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC114TSNPN resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114TSFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit desi

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTC124ETNPN resistor-equipped transistor1999 Apr 16Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124ETFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3handbook, 4 columns Simplification of circuit design3

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC114TKNPN resistor-equipped transistor1998 May 19Product specificationSupersedes data of 1997 May 28File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114TKFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit desi

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862PC1815NPN general purpose transistorProduct specification 2004 Nov 05Supersedes data of 1999 May 28Philips Semiconductors Product specificationNPN general purpose transistor 2PC1815FEATURES PINNING Low current (max. 150 mA)PIN DESCRIPTION Low voltage (max. 50 V).1 base2 collectorAPPLICATIONS3 emitter

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC114TUNPN resistor-equipped transistor1999 Apr 16Preliminary specificationSupersedes data of 1998 May 19Philips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC114TUFEATURES Built-in bias resistor R1 (typ. 10 k)3handbook, 4 columns Simplification of circuit design3

DISCRETE SEMICONDUCTORS DATA SHEETPDTC123E seriesNPN resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 kProduct data sheet 2004 Aug 06Supersedes data of 2004 Mar 18NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC123E seriesR1 = 2.2 k, R2 = 2.2 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC143EKNPN resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jun 16File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143EKFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each)3 Simplificati

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC124ESNPN resistor-equipped transistor1998 May 08Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124ESFEATURES Built-in bias resistors R1 and R2(typ. 22 k each) Simplification o

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC144WTNPN resistor-equipped transistor1999 May 25Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144WTFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 47 k and 22 kPIN DESCRIPTIONrespectively)1 base/input

DISCRETE SEMICONDUCTORSDATA SHEET*M3D125BC177PNP general purpose transistor1997 Jun 04Product specificationSupersedes data of 1997 May 01File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP general purpose transistor BC177FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 emitter2 base

DISCRETE SEMICONDUCTORSDATA SHEEThalfpageM3D088PDTC114ETNPN resistor-equipped transistor1999 Apr 15Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3dbook, 4 columns3 Simplification of circuit designR1

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862PC1815NPN general purpose transistor1999 May 28Product specificationSupersedes data of 1997 Mar 28Philips Semiconductors Product specificationNPN general purpose transistor 2PC1815FEATURES PINNING Low current (max. 150 mA)PIN DESCRIPTION Low voltage (max. 50 V).1 base2 collectorAPPLICATIONS3 emitter

PDTC143X seriesNPN resistor-equipped transistors; R1 = 4.7 k, R2 = 10 kRev. 10 16 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTC143XE SOT416 SC-75 - PDTA143XEPDTC143XEF SOT490 SC-89 - PDTA143XEFPDTC143XK SOT346 SC-5

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC123JEFNPN resistor-equipped transistor1999 May 27Preliminary specificationPhilips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC123JEFFEATURES Built-in bias resistors R1 and R2(typ. 2.2 k and 47 krespectively)3handbook, halfpage3 Simplification of circuit designR11 Red

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC143ZKNPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143ZKFEATURES Built-in bias resistors R1 and R2 (typ. 4.7 and 47 krespectively) Simplification of circuit design33

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114TENPN resistor-equipped transistor1998 Aug 03Product specificationSupersedes data of 1997 Jul 11File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114TEFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design Reduces

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC144EUNPN resistor-equipped transistor1999 Apr 16Objective specificationSupersedes data of 1998 May 18Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTC144EUFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3handbook, 4 columns Simplification of circuit desi

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC123JENPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 Aug 03Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123JEFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 krespectively) Simplification of circuit designhandbook, halfpage33

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC143XTNPN resistor-equipped transistor1999 Apr 20Product specificationPhilips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143XTFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k and 10 k3handbook, 4 columnsrespectively)3 Simplification of circuit designR11

PDTC114T seriesNPN resistor-equipped transistors; R1 = 10 k, R2 = openRev. 08 9 February 2006 Product data sheet1. Product profile1.1 General descriptionNPN Resistor-Equipped Transistors (RET) family.Table 1: Product overviewType number Package PNP complementPhilips JEITA JEDECPDTC114TE SOT416 SC-75 - PDTA114TEPDTC114TK SOT346 SC-59A TO-236 PDTA114TKPDTC114TM SOT883

DISCRETE SEMICONDUCTORS DATA SHEETPDTC114Y seriesNPN resistor-equipped transistors; R1 = 10 k, R2 = 47 kProduct data sheet 2004 Aug 17Supersedes data of 2003 Sep 10NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC114Y seriesR1 = 10 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

DISCRETE SEMICONDUCTORSDATA SHEETM3D125BC107; BC108; BC109NPN general purpose transistors1997 Sep 03Product specificationSupersedes data of 1997 Jun 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN general purpose transistors BC107; BC108; BC109FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max.

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC144ESNPN resistor-equipped transistor1998 May 19Product specificationSupersedes data of 1997 Jul 01File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144ESFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification o

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC114YTNPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114YTFEATURES Built-in bias resistors R1 and R2 (typ. 10 and 47 krespectively) Simplification of circuit design3 Re

DISCRETE SEMICONDUCTORSDATA SHEETM3D110BC140; BC141NPN medium power transistorsProduct specification 1997 May 12Supersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN medium power transistors BC140; BC141FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 60 V).1 emitter2

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC114EUNPN resistor-equipped transistor1999 Apr 16Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EUFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3handbook, 4 columns Simplification of circuit design

DISCRETE SEMICONDUCTORS DATA SHEETPDTC143T seriesNPN resistor-equipped transistors; R1 = 4.7 k, R2 = openProduct data sheet 2004 Aug 06Supersedes data of 2004 Apr 06NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC143T seriesR1 = 4.7 k, R2 = openFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

DISCRETE SEMICONDUCTORS DATA SHEETPDTC123J seriesNPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 kProduct data sheet 2004 Aug 13Supersedes data of 2003 Apr 10NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC123J seriesR1 = 2.2 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC143EUNPN resistor-equipped transistor1999 Apr 14Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143EUFEATURES Built-in bias resistors R1 and R2typ. 4.7 k each)3handbook, 4 columns Simplification of circuit design

DISCRETE SEMICONDUCTORS DATA SHEETPDTC114E seriesNPN resistor-equipped transistor; R1 = 10 k, R2 = 10 kProduct data sheet 2004 Aug 05Supersedes data of 2003 Apr 10NXP Semiconductors Product data sheetNPN resistor-equipped transistor; PDTC114E seriesR1 = 10 k, R2 = 10 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTC143TTNPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 May 29Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143TTFEATURES PINNING Built-in bias resistor R1 (typ. 4.7 k)PIN DESCRIPTION Simplification of circuit design1 base/input

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC124EKNPN resistor-equipped transistor1998 May 08Product specificationSupersedes data of 1997 Sep 08File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124EKFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3 Simplificatio

DISCRETE SEMICONDUCTORS DATA SHEETPDTC144T seriesNPN resistor-equipped transistors; R1 = 47 k, R2 = openProduct data sheet 2004 Aug 17Supersedes data of 2004 Apr 06NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC144T seriesR1 = 47 k, R2 = openFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT S

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC143XENPN resistor-equipped transistorProduct specification 1999 May 21Supersedes data of 1998 May 29Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143XEFEATURES Built-in bias resistors R1 and R2 (typ. 4.7 k and 10 krespectively) Simplification of circuit designhandbook, halfpage

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114EENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EEFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 10 k each)PIN DESCRIPTION Simplification of circuit design1 base/input

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC143EENPN resistor-equipped transistor1998 Jul 31Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143EEFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each) Simplification of circuit desig

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC124EUNPN resistor-equipped transistor1999 Apr 16Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124EUFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3handbook, 4 columns Simplification of circuit design

PDTC115T seriesNPN resistor-equipped transistors; R1 = 100 k, R2 = openRev. 04 17 February 2005 Product data sheet1. Product profile1.1 General descriptionNPN resistor-equipped transistors.Table 1: Product overviewType number Package PNP complementPhilips JEITAPDTC115TE SOT416 SC-75 PDTA115TEPDTC115TK SOT346 SC-59A PDTA115TKPDTC115TM SOT883 SC-101 PDTA115TM[1]PD

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC114YUNPN resistor-equipped transistor1999 Apr 20Product specificationPhilips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114YUFEATURES Built-in bias resistors R1 and R2(typ. 10 k and 47 k respectively)3handbook, 4 columns3 Simplification of circuit designR1 R

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC124XEFNPN resistor-equipped transistor1999 May 18Preliminary specificationSupersedes data of 1998 Nov 11Philips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC124XEFFEATURES Power dissipation comparable to SOT23 Built-in bias resistors R1 and R2 (typ. 22 k and 47 krespectively)3ha

Philips Semiconductors Product specificationPNP medium power transistors BC160; BC161FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 60 V).1 emitter2 baseAPPLICATIONS3 collector, connected to case General purpose applications.DESCRIPTION 1handbook, halfpage32PNP medium power transistor in a TO-39 metal package.NPN complements: B

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTC114TTNPN resistor-equipped transistor1999 Apr 16Objective specificationSupersedes data of 1998 May 19Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTC114TTFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design3handbook, 4 columns Reduces

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114ESNPN resistor-equipped transistor1998 Nov 26Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114ESFEATURES Built-in bias resistors R1 and R2(typ. 10 k each) Simplification of circuit designhandbook, halfpage2 Reduces numbe

PDTC114T seriesNPN resistor-equipped transistors; R1 = 10 k, R2 = openRev. 08 9 February 2006 Product data sheet1. Product profile1.1 General descriptionNPN Resistor-Equipped Transistors (RET) family.Table 1: Product overviewType number Package PNP complementPhilips JEITA JEDECPDTC114TE SOT416 SC-75 - PDTA114TEPDTC114TK SOT346 SC-59A TO-236 PDTA114TKPDTC114TM SOT883

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC123JTNPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123JTFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 krespectively) Simplification of circuit design

DISCRETE SEMICONDUCTORSDATA SHEETM3D110BC140; BC141NPN medium power transistorsProduct specification 1997 May 12Supersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN medium power transistors BC140; BC141FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 60 V).1 emitter2

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC144WUNPN resistor-equipped transistor1999 May 25Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144WUFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 47 k and 22 kPIN DESCRIPTIONrespectively)1 base/input

DISCRETE SEMICONDUCTORS DATA SHEETPDTC144W seriesNPN resistor-equipped transistors; R1 = 47 k, R2 = 22 kProduct data sheet 2004 Aug 17Supersedes data of 2004 Mar 23NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC144W seriesR1 = 47 k, R2 = 22 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC114EKNPN resistor-equipped transistor1998 Nov 26Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EKFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplification of circuit design3 Reduces number

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC123ETNPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123ETFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k each) Simplification of circuit design Reduces number of co

INTEGRATED CIRCUITSPLC18V8ZZero standby powerCMOS versatile PAL devicesProduct specification1997 Aug 08Replaces data sheet PLC18V8Z35/PLC18V8ZI of Dec 19 1995,and data sheet PLC18V8Z25/PLC18V8ZI of Dec 19, 1995PhilipsSemiconductorsPhilips Semiconductors Product specificationZero standby powerPLC18V8ZCMOS versatile PAL devicesDESCRIPTION Industrial controlThe

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC124XENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 Sep 21Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124XEFEATURES Built-in bias resistors R1 and R2 (typ. 22 k and 47 krespectively) Simplification of circuit designhandbook, halfpage

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC124EENPN resistor-equipped transistor1998 Jul 31Product specificationSupersedes data of 1997 Jul 11File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124EEFEATURES Built-in bias resistors R1 and R2(typ. 22 k each) Simplification of circuit design

DISCRETE SEMICONDUCTORS DATA SHEETPDTC144E seriesNPN resistor-equipped transistors; R1 = 47 k, R2 = 47 kProduct data sheet 2004 Aug 17Supersedes data of 2004 Mar 23NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC144E seriesR1 = 47 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC143ESNPN resistor-equipped transistor1998 May 20Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143ESFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each) Simplification

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114YENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114YEFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 10 k and 47 kPIN DESCRIPTIONrespectively)1 base/input Simplification

DISCRETE SEMICONDUCTORS DATA SHEETPDTC143E seriesNPN resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 kProduct data sheet 2004 Aug 05Supersedes data of 2004 Mar 18NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC143E seriesR1 = 4.7 k, R2 = 4.7 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC143ZTNPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143ZTFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 4.7 k and 47 kPIN DESCRIPTIONrespectively)1 base/input

PDTC115T seriesNPN resistor-equipped transistors; R1 = 100 k, R2 = openRev. 04 17 February 2005 Product data sheet1. Product profile1.1 General descriptionNPN resistor-equipped transistors.Table 1: Product overviewType number Package PNP complementPhilips JEITAPDTC115TE SOT416 SC-75 PDTA115TEPDTC115TK SOT346 SC-59A PDTA115TKPDTC115TM SOT883 SC-101 PDTA115TM[1]PD

DISCRETE SEMICONDUCTORS DATA SHEETPDTC124E seriesNPN resistor-equipped transistors; R1 = 22 k, R2 = 22 kProduct data sheet 2004 Aug 17Supersedes data of 2003 Apr 14NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC124E seriesR1 = 22 k, R2 = 22 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

PDTC123T seriesNPN resistor-equipped transistors; R1 = 2.2 k, R2 = openRev. 01 10 March 2006 Product data sheet1. Product profile1.1 General descriptionNPN Resistor-Equipped Transistors (RET) family in Surface Mounted Device (SMD)plastic packages.Table 1. Product overviewType number Package PNP complementPhilips JEITA JEDECPDTC123TE SOT416 SC-75 - PDTA123TEPDTC123TK

DISCRETE SEMICONDUCTORS DATA SHEETPDTC143Z seriesNPN resistor-equipped transistors; R1 = 4.7 k, R2 = 47 kProduct data sheet 2004 Aug 16Supersedes data of 2004 Apr 06NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC143Z seriesR1 = 4.7 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC144EKNPN resistor-equipped transistor1998 May 19Objective specificationSupersedes data of 1997 Jul 14File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTC144EKFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3ndbook, 4 col

DISCRETE SEMICONDUCTORSDATA SHEETM3D125BC107; BC108; BC109NPN general purpose transistors1997 Sep 03Product specificationSupersedes data of 1997 Jun 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN general purpose transistors BC107; BC108; BC109FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max.

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC114EEFNPN resistor-equipped transistor1999 May 31Product specificationSupersedes data of 1998 Nov 11Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EEFFEATURES Power dissipation comparable toSOT23 Built-in bias resistors R1 and R23handbook, halfpage(typ. 10 k each) 3R1

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC144EENPN resistor-equipped transistor1998 Jul 16Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144EEFEATURES Built-in bias resistors R1 and R2(typ. 47 k each) Simplification of circuit design

DISCRETE SEMICONDUCTORSDATA SHEETM3D110BC160; BC161PNP medium power transistorsProduct specification 1997 May 12Supersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP medium power transistors BC160; BC161FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 60 V).1 emitter2

DISCRETE SEMICONDUCTORSDATA SHEET*M3D125BC177PNP general purpose transistor1997 Jun 04Product specificationSupersedes data of 1997 May 01File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP general purpose transistor BC177FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 emitter2 base

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC143ETNPN resistor-equipped transistor1999 Apr 15Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143ETFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k each)3handbook, 4 columns Simplification of circuit design

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC144ETNPN resistor-equipped transistor1999 Apr 16Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC144ETFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3handbook, 4 columns Simplification of circuit design

DISCRETE SEMICONDUCTORS DATA SHEETPDTC115E seriesNPN resistor-equipped transistors; R1 = 100 k, R2 = 100 kProduct data sheet 2004 Aug 06Supersedes data of 2004 Apr 06NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC115E seriesR1 = 100 k, R2 = 100 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI

STGW35NC120HD32 A, 1200 V very fast IGBTDatasheet - production dataFeatures Low on-losses Low on-voltage drop (VCE(sat)) High current capability IGBT co-packaged with ultrafast free-wheeling diode3 Low gate charge21 Ideal for soft switching applicationTO-247 long leadsApplication Induction heatingFigure 1. Internal schematic diagram

BC161-16GENERAL PURPOSE TRANSISTORPRELIMINARY DATADESCRIPTION The BC161-16 is a silicon Planar Epitaxial PNPtransistor in Jedec TO-39 metal case. It isparticularly designed for audio amplifiers andswitching application up to 1A. The complementary NPN type is the BC141-16.TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collecto

MSC1004MPRF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.1025 - 1150 MHz.RUGGEDIZED VSWR :1.INTERNAL INPUT MATCHING.LOW THERMAL RESISTANCE.P 4.0 W MIN. WITH 9.0 dB GAINOUT =.280 4LFL (SO51)epoxy sealedORDER CODE BRANDINGMSC1004MP 1004MPPIN CONNECTIONDESCRIPTIONThe MSC1004MP is a low-level Class C pulsedtransistor specifically designed for DME/IFF driveror ou

STGB3NC120HDSTGF3NC120HD, STGP3NC120HD7 A, 1200 V very fast IGBT with ultrafast diodeFeaturesTAB High voltage capability High speed Very soft ultrafast recovery anti-parallel diode332211Applications TO-220FPTO-220 Home applianceTAB Lighting31DescriptionDPAKThis high voltage and very fast IGBT shows an excellent trade-off between l

MSC1000MPRF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.RUGGEDIZED VSWR :1.INPUT MATCHING.LOW THERMAL RESISTANCE.CLASS A OPERATION.P 0.6 W MIN. WITH 10.8 dB GAINOUT =.280 4LSL (S053)epoxy sealedORDER CODE BRANDINGMSC1000MP 1000MPPIN CONNECTIONDESCRIPTIONThe MSC1000MP is a Class A, common emittertransistor with an emitter ballasted Matrix geo-metry specifi

BC107BC108-BC109LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERSDESCRIPTIONThe BC107, BC108 and BC109 are silicon planarepitaxial NPN transistors in TO-18 metal case.Theyare suitable for use in driver stages, low noise inputstages and signal processing circuits of televisionreceivers. The complementary PNP types are re-spectively the BC177, BC178 and BC179.TO-18INTERNAL SCHEMATI

STGB3NC120HDSTGF3NC120HD, STGP3NC120HD7 A, 1200 V very fast IGBT with ultrafast diodeFeaturesTAB High voltage capability High speed Very soft ultrafast recovery anti-parallel diode332211Applications TO-220FPTO-220 Home applianceTAB Lighting31DescriptionDPAKThis high voltage and very fast IGBT shows an excellent trade-off between l

STGD3NC120H7 A, 1200 V very fast IGBTDatasheet - production dataFeatures High voltage capability High speedTABApplications3 Home appliance21 LightingIPAKDescription(TO251)This device is a very fast IGBT developed using advanced PowerMESH technology. This process guarantees an excellent trade-off between switching performance and low on-state

STGW30NC120HDN-channel 1200V - 30A - TO-247very fast PowerMESH IGBTFeaturesICVCE(sat) Type VCES@25C @100CSTGW30NC120HD 1200V

BC107BC107BLow noise general purpose audio amplifiersDescriptionThe BC107 and BC107B are silicon planarepitaxial NPN transistors in TO-18 metal case. They are suitable for use in driver stages, lownoise input stages and signal processing circuitsof television receivers. The PNP complementarytypes are BC177 and BC177B respectively.TO-18Internal schematic diagramOrder code

BC141-16GENERAL PURPOSE TRANSISTORDESCRIPTION The BC141-16 is a silicon Planar Epitaxial NPNtransistor in Jedec TO-39 metal case. It isparticularly designed for audio amplifiers andswitching application up to 1A. The complementary PNP type is the BC161-16.TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCBO Collector-Base Voltage (IE

BC107BC108LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERSDESCRIPTIONThe BC107 and BC108 are silicon planarepitaxial NPN transistors in TO-18 metal case.They are suitable for use in driver stages, lownoise input stages and signal processing circuitsof television reveivers. The PNP complemet forBC107 is BC177.TO-18INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Param

BC140BC141GENERAL PURPOSE TRANSISTORSDESCRIPTIONThe BC140 and BC141 are silicon planar epitaxialNPN transistors in TO-39 metal case. They are par-ticularly designed for audio amplifiers and switchingapplications up to 1 A. The complementary PNPtypes are the BC160 and BC161.TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSValueSymbol ParameterBC140 BC141 UnitV

STGF3NC120HDN-CHANNEL 3A - 1200V TO-220FPFAST PowerMESH IGBT with Integral Damper DiodeTable 1: General Features Figure 1: PackageTYPE VCES VCE(sat) (Max) IC @25C @100CSTGF3NC120HD 1200 V

BC160BC161GENERAL PURPOSE TRANSISTORSDESCRIPTIONThe BC160, and BC161 are silicon planar epitaxialPNP transistors in TO-39 metal case.They are par-ticurlarly designed foraudio amplifiers and switchingapplications up to 1A. The complementary NPNtypes are the BC140 and BC141.TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSValueSymbol Parameter UnitBC160 BC161VC

BC177BC178-BC179LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERSDESCRIPTIONThe BC177, BC178 and BC179 are silicon planarepitaxial PNP transistors in TO-18 metal case.Theyare suitable for use in driver audio stages, low noiseinput audio stages and as low power, high gaingeneral purpose transistors. The complementaryNPN types are respectively the BC107, BC108 andBC109.TO-18INTER

STGB3NC120HDSTGF3NC120HD, STGP3NC120HD7 A, 1200 V very fast IGBT with ultrafast diodeFeaturesTAB High voltage capability High speed Very soft ultrafast recovery anti-parallel diode332211Applications TO-220FPTO-220 Home applianceTAB Lighting31DescriptionDPAKThis high voltage and very fast IGBT shows an excellent trade-off between l

MSC1000MRF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.RUGGEDIZED VSWR :1.INPUT MATCHING.LOW THERMAL RESISTANCE.CLASS A OPERATION.P 0.6 W MIN. WITH 10.8 dB GAINOUT =.280 2LFL (S058)epoxy sealedORDER CODE BRANDINGMSC1000M 1000MPIN CONNECTIONDESCRIPTIONThe MSC1000M is a Class A, common emittertransistor with an emitter ballasted Matrix geo-metry specificall

MSC1004MRF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.1025 - 1150 MHz.RUGGEDIZED VSWR :1.INTERNAL INPUT MATCHING.LOW THERMAL RESISTANCE.P 4.0 W MIN. WITH 9.0 dB GAINOUT =.280 2LFL (SO68)epoxy sealedORDER CODE BRANDINGMSC1004M 1004MPIN CONNECTIONDESCRIPTIONThe MSC1004M is a low-level Class C pulsedtransistor specifically designed for DME/IFF driveror output

STGF3NC120HDSTGP3NC120HD7 A, 1200 V very fast IGBTFeatures Low on-voltage drop (VCE(sat))TAB High current capability Off losses include tail current High speed332211ApplicationTO-220FPTO-220 Home appliance LightingDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off Figure 1. Internal

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2SC1959 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SC1959 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity : h = 25 (min): V = 6 V, I = 400 mA FE (2) CE C 1 watt amplifier applications. Complementary to 2SA562TM. Maximum Ratings (Ta == 25C) ==

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TTC13003LBipolar Transistors Silicon NPN Triple-Diffused TypeTTC13003LTTC13003LTTC13003LTTC13003L1. Applications1. Applications1. Applications1. Applications High-Speed Switching for Inverter Lighting Equipment2. Features2. Features2. Features2. Features(1) Suitable for RCC circuits.(guaranteed small current hFE):hFE = 10(min)(IC = 1 mA)(2) High speed: tf =

2SC1815 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Unit: mmDriver Stage Amplifier Applications High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

2SC1627 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1627 Driver Stage Amplifier Applications Unit: mm Voltage Amplifier Applications Complementary to 2SA817 Driver stage application of 20 to 25 watts amplifiers. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 80 VCollector-emitter voltage VCEO

2SC1815 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Unit: mmDriver Stage Amplifier Applications High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

2SC1923 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC1923 High Frequency Amplifier Applications Unit: mm FM, RF, MIX, IF Amplifier Applications Small reverse transfer capacitance: Cre = 0.7 pF (typ.) Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltag

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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

2SC1815(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815(L) Audio Frequency Voltage Amplifier Applications Unit: mm Low Noise Amplifier Applications High breakdown voltage, high current capability : V = 50 V (min), I = 150 mA (max) CEO C Excellent linearity of h FE: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : h (I = 0.1 mA)/h (I = 2 mA)

Ordering number:EN3082FC114NPN Epitaxial Planar Silicon Composite TransistorSwitching ApplicationsFeatures Package Dimensions On-chip bias resistors (R1=10k , R2=10k )unit:mm Composite type with 2 transistors contained in the2067CP package currently in use, improving the mount-[FC114]ing efficiency greatly. The FC114 is formed with two chips, being equiva-

Ordering number:EN5099FC154NPN/PNP Epitaxial Planar Silicon TransistorHigh-Speed Switching,High-Frequency Amp ApplicationsFeatures Package Dimensions Composite type with NPN transistor and a PNPunit:mmtransistor contained in the conventional CP package,2104Aimproving the mounting efficiency greatly.[FC154] The FC154 is formed with two chips, being equiva-lent to

Ordering number:EN3075FC107PNP Epitaxial Planar Silicon Composite TransistorSwitching ApplicationsFeatures Package Dimensions On-chip bias resistors (R1=47k , R2=47k )unit:mm Composite type with 2 transistors contained in the2066CP package currently in use, improving the mount-[FC107]ing efficiency greatly. The FC107 is formed with two chips, being equiva-

Ordering number:EN3289FC135PNP Epitaxial Planar Silicon Composite TransistorSwitching Applications(with Bias Resistance)Features Package Dimensions On-chip bias resistance (R1=4.7k) ).unit:mm Composite type with 2 transistors contained in the2067CP package currently in use, improving the mount-[FC135]ing efficiency greatly. The FC135 is formed with two chip

Ordering number:EN3361FC140NPN Epitaxial Planar Silicon Composite TransistorHigh-Speed Switching ApplicationsFeatures Package Dimensions Composite type with 2 transistors contained in theunit:mmCP package currently in use, improving the mount-2074ing efficiency greatly.[FC140] Small output capacitance, high gain-bandwidthproduct. The FC140 is formed with two c

Ordering number:EN3062AFC120NPN Epitaxial Planar Silicon Composite TransistorHigh-Frequency General-Purpose Amp, Differential Amp ApplicationsFeatures Package Dimensions Composite type with 2 transistors contained in theunit:mmCP package currently in use, improving the mount-2068ing efficiency greatly.[FC120] The FC120 is formed with two chips, being equiva-lent

Ordering number:EN3286FC132NPN Epitaxial Planar Silicon Composite TransistorSwitching Applications(with Bias Resistance)Features Package Dimensions On-chip bias resistances (R1=10k, R2=47k ).unit:mm Composite type with 2 transistors contained in the2067CP package currently in use, improving the mount-[FC132]ing efficiency greatly. The FC132 is formed wit

Ordering number:EN3284FC130NPN Epitaxial Planar Silicon Composite TransistorSwitching Applications(with Bias Resistance)Features Package Dimensions On-chip bias resistance (R1=10k ).unit:mm Composite type with 2 transistors contained in the2066CP package currently in use, improving the mount-[FC130]ing efficiency greatly. The FC130 is formed with two chips,

Ordering number:EN3479FC144NPN Epitaxial Planar Silicon Composite TransistorSwitching Applications(with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2066[FC144]Features On-chip bias resistances (R1=2.2k, R2=10k ). Composite type with 2 transistors contained in the CPpac

Ordering number:EN3115FC117PNP Epitaxial Planar Silicon Composite TransistorLow-FrequencyGeneral-Purpose Amp ApplicationsFeatures Package Dimensions Composite type with 2 transistors contained in theunit:mmCP package currently in use, improving the mount-2067ing efficiency greatly.[FC117] The FC117 is formed with two chips, being equiva-lent to the 2SA1753, place

Ordering number:ENN4983TR:NPN Epitaxial Planar Silicon TransistorFET:N-Channel Junction Silicon FETFC18High-Frequency Amp, AM Amp,Low-Frequency Amp ApplicationsFeatures Package Dimensions Composed of 2 chips, one being equivalent to theunit:mm2SK2394 and the other the 2SC4639, in the2122convertional CP package, improving the mounting[FC18]efficiency greatly. Dr

Ordering number:EN3080FC112NPN Epitaxial Planar Silicon Composite TransistorSwitching ApplicationsFeatures Package Dimensions On-chip bias resistors (R1=22k , R2=22k )unit:mm Composite type with 2 transistors contained in the2066CP package currently in use, improving the mount-[FC112]ing efficiency greatly. The FC112 is formed with two chips, being equiva-

Ordering number:EN3061AFC119NPN Epitaxial Planar Silicon TransistorHigh-Frequency General-Purpose Amp, Differential Amp ApplicationsFeatures Package Dimensions Composite type with 2 transistors contained in theunit:mmCP package currently in use, improving the mount-2068ing efficiency greatly.[FC119] The FC119 is formed with two chips, being equiva-lent to the 2SC

Ordering number:EN3116FC118NPN Epitaxial Planar Silicon Composite TransistorLow-FrequencyGeneral-Purpose Amp ApplicationsFeatures Package Dimensions Composite type with 2 transistors contained in theunit:mmCP package currently in use, improving the mount-2067ing efficiency greatly.[FC118] The FC118 is formed with two chips, being equiva-lent to the 2SC4577, place

Ordering number:EN3965FC150PNP/NPN Epitaxial Planar Silicon Composite TransistorLow-Frequency General-Purpose Amp, Driver ApplicationsFeatures Package Dimensions Composite type with 2 transistors contained in theunit:mmCP package currently in use, improving the mount-2067ing efficiency greatly.[FC150] The FC150 is formed with two chips, being equiva-lent to the 2

Ordering number:EN3079FC111PNP Epitaxial Planar Silicon Composite TransistorSwitching ApplicationsFeatures Package Dimensions On-chip bias resistors (R1=22k , R2=22k )unit:mm Composite type with 2 transistors contained in the2066CP package currently in use, improving the mount-[FC111]ing efficiency greatly. The FC111 is formed with two chips, being equiva-

Ordering number:EN429ENPN Triple Diffused Planar Silicon Transistor2SC1755TV Chroma, Video, Audio Output ApplicationsPackage Dimensionsunit:mm2010C[2SC1755]JEDEC : TO-220AB 1 : BaseEIAJ : SC-46 2 : Collector3 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 300 VCollector-to-Emitter

Ordering number:EN3281FC127PNP Epitaxial Planar Silicon Composite TransistorSwitching Applications(with Bias Resistance)Features Package Dimensions On-chip bias resistance (R1=10k ).unit:mm Composite type with 2 transistors contained in the2067CP package currently in use, improving the mount-[FC127]ing efficiency greatly. The FC127 is formed with two chips,

Ordering number:EN3084FC116NPN Epitaxial Planar Silicon Composite TransistorSwitching ApplicationsFeatures Package Dimensions On-chip bias resistors (R1=10k , R2=10k )unit:mm Composite type with 2 transistors contained in the2066CP package currently in use, improving the mount-[FC116]ing efficiency greatly. The FC116 is formed with two chips, being equiva-

Ordering number:EN4764PNP/NPN Epitaxial Planar Silicon TransistorsRA104C/RC104CSwitching Applications(with Bias Resistances)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2018B[RA104C/RC104C]Features0.40.16 On-chip bias resistances (R1=10k , R2=47k ).3 Compact package (CP).0 to 0.1

Ordering number:EN3287FC133PNP Epitaxial Planar Silicon Composite TransistorSwitching Applications(with Bias Resistance)Features Package Dimensions On-chip bias resistances (R1=10k, R2=47k) ).unit:mm Composite type with 2 transistors contained in the2066CP package currently in use, improving the mount-[FC133]ing efficiency greatly. The FC133 is formed wi

Ordering number:EN3081FC113PNP Epitaxial Planar Silicon Composite TransistorSwitching ApplicationsFeatures Package Dimensions On-chip bias resistors (R1=10k , R2=10k )unit:mm Composite type with 2 transistors contained in the2067CP package currently in use, improving the mount-[FC113]ing efficiency greatly. The FC113 is formed with two chips, being equiva-

Ordering number:EN3280FC126NPN Epitaxial Planar Silicon Composite TransistorSwitching Applications(with Bias Resistance)Features Package Dimensions On-chip bias resistance (R1=47k ).unit:mm Composite type with 2 transistors contained in the2066CP package currently in use, improving the mount-[FC126]ing efficiency greatly. The FC126 is formed with two chips,

Ordering number:ENN4336N-Channel Junction Silicon FETFC13Low-Frequency General-Purpose Amp,Differential Amp, Analog Switch ApplicationsFeatures Package Dimensions Composite type with 2 FETs contained in the CPunit:mmpackage currently in use, improving the mounting2095Aefficiency greatly.[FC13] The FC13 is formed with two chips, being equivalentto the 2SK303, plac

Ordering number:EN4652FC151PNP Epitaxial Planar Silicon Composite TransistorHigh-Frequency Amp, Current MirrorCircuit ApplicationsFeatures Package Dimensions Composite type with 2 transistors contained in the CPunit:mmpackage currently in use, improving the mounting2103Aefficiency greatly.[FC151] The FC151 is formed with two chips, being equiva-lent to the 2SA1669

Ordering number:EN3285FC131PNP Epitaxial Planar Silicon Composite TransistorSwitching Applications(with Bias Resistance)Features Package Dimensions On-chip bias resistances (R1=10k, R2=47k) ).unit:mm Composite type with 2 transistors contained in the2067CP package currently in use, improving the mount-[FC131]ing efficiency greatly. The FC131 is formed wi

Ordering number:EN3288FC134NPN Epitaxial Planar Silicon Composite TransistorSwitching Applications(with Bias Resistance)Features Package Dimensions On-chip bias resistances (R1=10k, R2=47k) ).unit:mm Composite type with 2 transistors contained in the2066CP package currently in use, improving the mount-[FC134]ing efficiency greatly. The FC134 is formed wi

Ordering number:EN3292FC138NPN Epitaxial Planar Silicon Composite TransistorSwitching Applications(with Bias Resistance)Features Package Dimensions On-chip bias resistance (R1=4.7k ).unit:mm Composite type with 2 transistors contained in the2066CP package currently in use, improving the mount-[FC138]ing efficiency greatly. The FC138 is formed with two chips

Ordering number:EN3478FC143NPN Epitaxial Planar Silicon Composite TransistorSwitching Applications(with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2066[FC143]Features On-chip bias resistance (R1=4.7k, R2=10k ). Composite type with 2 transistors contained in theCP pack

Ordering number:EN3154FC11N-Channel Junction Silicon FETLow-Frequency General-Purpose Amp,Differential Amp ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm Composite type with 2 transistors contained in the2070CP package currently in use, improving the mount-[FC11]ing efficiency greatly. The FC11 is formed with two chips, being equivale

Ordering number:EN3076FC108NPN Epitaxial Planar Silicon Composite TransistorSwitching ApplicationsFeatures Package Dimensions On-chip bias resistors (R1=47k , R2=47k )unit:mm Composite type with 2 transistors contained in the2066CP package currently in use, improving the mount-[FC108]ing efficiency greatly. The FC108 is formed with two chips, being equiva-

Ordering number:EN5063FC155PNP Epitaxial Planar Silicon Transistor (With bias resistances)PNP Epitaxail Planar Silicon TransistorConstant-Current Circuit ApplicationsFeatures Package Dimensions Complex type of 2 devices (transistor with resis-unit:mmtances and low saturation transistor) contained in one2104Apackage, facilitating high-density mounting.[FC155]Electrical

Ordering number:EN3282FC128NPN Epitaxial Planar Silicon Composite TransistorSwitching Applications(with Bias Resistance)Features Package Dimensions On-chip bias resistance (R1=10k ).unit:mm Composite type with 2 transistors contained in the2067CP package currently in use, improving the mount-[FC128]ing efficiency greatly. The FC128 is formed with two chips,

Ordering number:EN3190FC121PNP Epitaxial Planar Silicon Composite TransistorSwitching Applications(with Bias Resistance)Features Package Dimensions On-chip bias resistances (R1=2.2k , R2=10k ).unit:mm Composite type with 2 transistors contained in the2066CP package currently in use, improving the mount-[FC121]ing efficiency greatly. The FC121 is formed w

Ordering number:EN3083FC115PNP Epitaxial Planar Silicon Composite TransistorSwitching ApplicationsFeatures Package Dimensions On-chip bias resistors (R1=10k , R2=10k )unit:mm Composite type with 2 transistors contained in the2066CP package currently in use, improving the mount-[FC115]ing efficiency greatly. The FC115 is formed with two chips, being equiva-

Ordering number:ENN3482TR:NPN Epitaxial Plannar Silicon TransistorFET:N-Channel Junction Silicon TransistorFC12High-Frequency Amp, AM Applications,Low-Frequency AmpFeatures Package Dimensions Composite type with 2 transistors contained in theunit:mmCP package currently in use, improving the mount-2075ing efficiency greatly.[FC12] The FC12 is formed with two chips

Ordering number:EN5433FC157NPN Epitaxial Planar Silicon Composite TransistorHigh-Frequency Low-Noise Amp,Differential Amp ApplicationsFeatures Package Dimensions Composite type with 2 transistors contained in theunit:mmCP package currently in use, improving the mount-2067Aing efficiency greatly.[FC157] The FC157 is formed with two chips, being equiva-lent to the

Ordering number:EN3290FC136NPN Epitaxial Planar Silicon Composite TransistorSwitching Applications(with Bias Resistance)Features Package Dimensions On-chip bias resistance (R1=4.7k ).unit:mm Composite type with 2 transistors contained in the2067CP package currently in use, improving the mount-[FC136]ing efficiency greatly. The FC136 is formed with two chips

Ordering number:EN3964FC149PNP Epitaxial Planar Silicon Composite TransistorLow-Frequency General-Purpose Amp, Driver ApplicationsFeatures Package Dimensions Composite type with 2 transistors contained in theunit:mmCP package currently in use, improving the mount-2067Aing efficiency greatly.[FC149] The FC149 is formed with two chips, being equiva-lent to the 2SA

Ordering number:EN3283FC129PNP Epitaxial Planar Silicon Composite TransistorSwitching Applications(with Bias Resistance)Features Package Dimensions On-chip bias resistance (R1=10k ).unit:mm Composite type with 2 transistors contained in the2066CP package currently in use, improving the mount-[FC129]ing efficiency greatly. The FC129 is formed with two chips,

Ordering number:EN3291FC137PNP Epitaxial Planar Silicon Composite TransistorSwitching Applications(with Bias Resistance)Features Package Dimensions On-chip bias resistances (R1=4.7k) ).unit:mm Composite type with 2 transistors contained in the2066CP package currently in use, improving the mount-[FC137]ing efficiency greatly. The FC137 is formed with two chi

Ordering number:EN3073FC105PNP Epitaxial Planar Silicon Composite TransistorSwitching ApplicationsFeatures Package Dimensions On-chip bias resistors (R1=47k , R2=47k )unit:mm Composite type with 2 transistors contained in the2067CP package currently in use, improving the mount-[FC105]ing efficiency greatly. The FC105 is formed with two chips, being equiva-

Ordering number:EN3278FC124NPN Epitaxial Planar Silicon Composite TransistorSwitching Applications(with Bias Resistance)Features Package Dimensions On-chip bias resistance (R1=47k ).unit:mm Composite type with 2 transistors contained in the2067CP package currently in use, improving the mount-[FC124]ing efficiency greatly. The FC124 is formed with two chips,

Ordering number:EN3078FC110NPN Epitaxial Planar Silicon Composite TransistorSwitching ApplicationsFeatures Package Dimensions On-chip bias resistors (R1=22k , R2=22k )unit:mm Composite type with 2 transistors contained in the2067CP package currently in use, improving the mount-[FC110]ing efficiency greatly. The FC110 is formed with two chips, being equiva-

Ordering number:EN3477FC142PNP Epitaxial Planar Silicon Composite TransistorSwitching Applications(with Bias Resistance)Features Package Dimensions On-chip bias resistance (R1=4.7k, R2=10k ).unit:mm Composite type with 2 transistors contained in the2066CP package currently in use, improving the mount-[FC142]ing efficiency greatly. The FC142 is formed wit

Ordering number:EN4775PNP/NPN Epitaxial Planar Silicon TransistorsRA101C/RC101CSwitching Applications(with Bias Resistances)Features Package Dimensions On-chip bias resistances (R1=47k , R2=47k ).unit:mm Compact package (CP).2018B[RA101C/RC101C]0.40.1630 to 0.11 0.95 20.951.92.91 : Base2 : Emitter( ) : RA101C3 : CollectorSANYO : CPSpec

Ordering number:EN4653FC152PNP Epitaxial Planar Silicon Composite TransistorHigh-Frequency Amp, Differential AmpApplicationsFeatures Package Dimensions Composite type with 2 transistors contained in theunit:mmCP package currently in use, improving the mount-2104Aing efficiency greatly.[FC152] The FC152 is formed with two chips, being equiva-lent to the 2SC4270, p

Ordering number:EN3324FC139NPN Epitaxial Planar Silicon Composite TransistorLow-Frequency General-Purpose Amp,General Driver ApplicationsFeatures Package Dimensions Composite type with 2 transistors contained in theunit:mmCP package currently in use, improving the mount-2067ing efficiency greatly.[FC139] The FC139 is formed with two chips, being equiva-lent to th

Ordering number:EN3279FC125PNP Epitaxial Planar Silicon Composite TransistorSwitching Applicationswith Bias Resistance)Features Package Dimensions On-chip bias resistance (R1=47k ).unit:mm Composite type with 2 transistors contained in the2066CP package currently in use, improving the mount-[FC125]ing efficiency greatly. The FC125 is formed with two chips,

Ordering number:EN5432FC156NPN Epitaxial Planar Silicon Composite TransistorHigh-Frequency Low-Noise Amp,Differential Amp ApplicationsFeatures Package Dimensions Composite type with 2 transistors contained in the CPunit:mmpackage currently in use, improving the mounting2104Aefficiency greatly.[FC156] The FC156 is formed with two chips, being equiva-lent to the 2SC

Ordering number:EN3277FC123PNP Epitaxial Planar Silicon Composite TransistorSwitching Applications(with Bias Resistance)Features Package Dimensions On-chip bias resistance (R1=47k ).unit:mm Composite type with 2 transistors contained in the2067CP package currently in use, improving the mount-[FC123]ing efficiency greatly. The FC123 is formed with two chips,

Ordering number:EN3077FC109PNP Epitaxial Planar Silicon Composite TransistorSwitching ApplicationsFeatures Package Dimensions On-chip bias resistors (R1=22k , R2=22k )unit:mm Composite type with 2 transistors contained in the2067CP package currently in use, improving the mount-[FC109]ing efficiency greatly. The FC109 is formed with two chips, being equiva-

Preliminary Datasheet R07DS0431EJ03002SC1213, 2SC1213A (Previous: REJ03G0684-0200)Rev.3.00Silicon NPN Epitaxial Jun 07, 2011Application Low frequency amplifier Complementary pair with 2SA673 and 2SA673A Outline RENESAS Package code: PRSS0003DA-A(Package name: TO-92 (1))1. Emitter2. Collector3. Base321Absolute Maximum Ratings (Ta = 25C) Item S

Preliminary Datasheet R07DS0432EJ03002SC1213A(K) (Previous: REJ03G0685-0200)Rev.3.00Silicon NPN Epitaxial Jun 07, 2011Application Low frequency amplifier Medium speed switching Outline RENESAS Package code: PRSS0003DA-A(Package name: TO-92 (1))1. Emitter2. Collector3. Base321Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitCollec

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

KSC1845Audio Frequency Low Noise Amplifier Complement to KSA992TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 120 VVCEO Collector-Emitter Voltage 120 VVEBO Emitter-Base Voltage 5 VIC Collector Current 50 mAIB Base Current 10 mAPC C

August 2009KSC1173 NPN Epitaxial Silicon TransistorFeatures Low Frequency Power Amplifier, Power Regulator Collector Current : IC=3A Collector Dissipation : PC=10W (TC=25C) Complement to KSA473TO-22011.Base 2.Collector 3.EmitterAbsolute Maximum Ratings * TA = 25C unless otherwise notedSymbol Parameter Value Units BVCBO Collector-Base Voltage 30 V BVC

June 2007BC183NPN General Purpose AmpliferTO-9211. Collector 2. Base 3. EmitterAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 45 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Collector Current (DC) 100 mAPC Collector Dissipation (Ta=25C) 350 mWTSTG , TJ Storage Junction Temperature

BC182NPN General Purpose Amplifier This device is designed for general purpose amplifier application at collector currents to 100mA. Sourced from process 10.TO-9211. Collector 2. Base 3. EmitterAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 50 VVCBO Collector-Base Voltage 60 VVEBO Emitter-Base Volt

June 2009FJC1963NPN Epitaxial Silicon TransistorFeatures Audio Power Amplifier Applications Complement to FJC1308 High Collector Current Low Collector-Emitter Saturation VoltageMarking1 9 6 3P Y W WSOT-891Weekly code1. Base 2. Collector 3. EmitterYear codehFE grageAbsolute Maximum Ratings TA = 25C unless otherwise notedSymbol Parameter Value U

BC182LBNPN General Purpose Amplifier This device is designed for general purpose amplifier application at collector currents to 100mA. Sourced from process 10.TO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 50 VVCBO Collector-Base Voltage 60 VVEBO Emitter-Base Vo

January 2010D45C11PNP Current Driver TransistorFeatures This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5P. NZT751 for characteristics.TO-22011. Base 2. Collector 3. EmitterAbsolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Vo

BC184LSilicon NPN Small Signal Transistor (Note 1) BVCEO = 30V (Min.) hFE = 130 (Min.) @VCE = 5.0V, IC = 100mATO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 45 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Collector Current (DC) 500 mAPC Col

BC182BNPN General Purpose Amplifier This device is designed for general purpose amplifier application at collector currents to 100mA. Sourced from process 10.TO-9211. Collector 2. Base 3. EmitterAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 50 VVCBO Collector-Base Voltage 60 VVEBO Emitter-Base Vol

September 2006KSC1008tmNPN Epitacial Silicon TransistorFeatures Low frequency amplifier medium speed switching. High Collector-Base Voltage : VCBO=80V. Collector Current : IC=700mA Collector Power Dissipation : PC=800mWTO-92 Suffix -C means Center Collector (1.Emitter 2.Collector 3.Base) Non suffix -C means Side Collector (1.Emitter 2.Base 3.C

KSC1675FM/AM RF AMP, MIX, CONV,OSC,IF Collector-Base Voltage : VCEO=30V High Current Gain Bandwidth Product : fT=300MHz (TYP.) Low Collector Capacitance : COB=2.0pF (TYP.) Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base)TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise n

July 2009FDMC15N06N-Channel MOSFET 55V, 15A, 0.090Features Description RDS(on) = 0.075 ( Typ.)@ VGS = 10V, ID = 15A These N-Channel power MOSFETs are manufactured using the innovative UItraFET process. This advanced process technology 100% Avalanche Testedachieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.This device

July 2005FJC1308PNP Epitaxial Silicon TransistorAudio Power Amplifier Applications Complement to FJC1963 High Collector Current Low Collector-Emitter Saturation VoltageMarking1 3 0 8P Y W WSOT-891Weekly code1. Base 2. Collector 3. EmitterYear codehFE grageAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Coll

BC183LCNPN General purpose Amplifier.TO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 45 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Collector Current (DC) 100 mAPC Collector Dissipation (Ta=25C) 350 mWTJ Junction Temperature 150 CTSTG Storage

KSC1623Low Frequency Amplifier & High Frequency 3OSC. Complement to KSA8122SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 VVEBO Emitter-Base Voltage 5 VIC Collector Current 100 mAPC Coll

KSC1393TV VHF Tuner RF Amplifier (Forward AGC) High Current Gain Bandwidth Product : fT=700MHz (TYP.) Low Noise Figure : NF=3.0dB (MAX.) at f=200MHz Low Reverse Transfer Capacitance : CRE=0.5pF (MAX.)TO-9211. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Colle

September 2007BC184Silicon NPN Small Signal Transistor BVCEO = 30V (Min.) hFE = 130 (Min.) @VCE = 5.0V, IC = 100mATO-9211. Collector 2. Base 3. EmitterAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 VVCBO Collector-Base Voltage 45 VVEBO Emitter-Base Voltage 5 VI C Collector Current (DC) 100 mA

KSC1815Audio Frequency Amplifier & High Frequency OSC Complement to KSA1015 Collector-Base Voltage : VCBO= 50VTO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 VVEBO Emitter-Base Voltage 5 VIC

June 2007BC183CNPN General Purpose AmpliferTO-9211. Collector 2. Base 3. EmitterAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 45 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 6 VIC Collector Current (DC) 100 mAPC Collector Dissipation (Ta=25C) 350 mWTSTG , TJ Storage Junction Temperatur

KSC1187TV 1st, 2nd Picture IF Amplifier(Forward AGC) High Current Gain Bandwidth Product : fT=700MHz High Power Gain : GPE=24dB (TYP.) at f=45MHzTO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 20

BC184LCSilicon NPN Small Signal Transistor (Note 1) BVCEO = 30V (Min.) hFE = 250 (Min.) @VCE = 5.0V, IC = 2mATO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 45 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Collector Current (DC) 200 mAPC Coll

July 2005FJC1386PNP Epitaxial Silicon TransistorLow Saturation Transistor Medium Power Amplifier Complement to FJC2098 High Collector Current Low Collector-Emitter Saturation VoltageMarking1 3 8 6P Y W WSOT-891Weekly code1. Base 2. Collector 3. EmitterYear codehFE grageAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value Uni

KSC1674TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator High Current Gain Bandwidth Product : fT=600MHz (TYP.) Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base)TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base

BC182LNPN General Purpose Amplifier This device is designed for general purpose amplifier application at collector currents to 100mA. Sourced from process 10.TO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 50 VVCBO Collector-Base Voltage 60 VVEBO Emitter-Base Vol

BC184CSilicon NPN Small Signal Transistor (Note 1) BVCEO = 30V (Min.) hFE = 130 (Min.) @VCE = 5.0V, IC = 100mATO-9211. Collector 2. Base 3. EmitterAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 45 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Collector Current (DC) 500 mAPC Col

KSC1507Color TV Chroma Output High Collector-Emitter Voltage : VCEO=300V Current Gain Bandwidth Product : fT=40MHz (Min.)TO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Volta

KSC1009High Voltage Amplifier High Collector-Base Voltage : VCBO=160V Collector Current : IC=700mA Collector Power Dissipation : PC=800mW Complement to KSA709 Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base)TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted S

Silicon Power Transistor2SC1505NPN 2SC1505 (1.5 W)

DATA SHEETSILICON TRANSISTOR2SC1927NPN SILICON EPITAXIAL DUAL TRANSISTORFOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHINGINDUSTRIAL USEDESCRIPTION PACKAGE DIMENSIONSThe 2SC1927 is an NPN silicon epitaxial dual transistor that (in millimeters)+0.3consists of two chips equivalent to the 2SC1275, and is designed for5.0 MIN. 3.5 0.2 5.0 MIN.differential amplifier an

DATA SHEETSILICON TRANSISTOR2SC1623AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORMINI MOLDFEATURESPACKAGE DIMENSIONS High DC Current Gain: hFE = 200 TYP.in millimeters(VCE = 6.0 V, IC = 1.0 mA)2.8 0.2 High Voltage: VCEO = 50 V1.5 0.65+0.10.15ABSOLUTE MAXIMUM RATINGSMaximum Voltages and Current (TA = 25 C)2Collector to

DISCRETE SEMICONDUCTORS DATA SHEETPDTC144T seriesNPN resistor-equipped transistors; R1 = 47 k, R2 = openProduct data sheet 2004 Aug 17Supersedes data of 2004 Apr 06NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC144T seriesR1 = 47 k, R2 = openFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT S

DISCRETE SEMICONDUCTORS DATA SHEETPDTC143T seriesNPN resistor-equipped transistors; R1 = 4.7 k, R2 = openProduct data sheet 2004 Aug 06Supersedes data of 2004 Apr 06NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC143T seriesR1 = 4.7 k, R2 = openFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

PDTC144V seriesNPN resistor-equipped transistors; R1 = 47 k, R2 = 10 kRev. 04 16 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN resistor-equipped transistors.Table 1. Product overviewType number Package PNP complementNXP JEITAPDTC144VE SOT416 SC-75 PDTA144VEPDTC144VK SOT346 SC-59A PDTA144VKPDTC144VM SOT883 SC-101 PDTA144VMPDTC144VS[1

DISCRETE SEMICONDUCTORS DATA SHEETPDTC124T seriesNPN resistor-equipped transistors; R1 = 22 k, R2 = openProduct data sheet 2004 Aug 13Supersedes data of 2004 Apr 06NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC124T seriesR1 = 22 k, R2 = openFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT S

PDTC124X seriesNPN resistor-equipped transistors; R1 = 22 k, R2 = 47 kRev. 07 16 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTC124XE SOT416 SC-75 - PDTA124XEPDTC124XEF SOT490 SC-89 - PDTA124XEFPDTC124XK SOT346 SC-59

DISCRETE SEMICONDUCTORS DATA SHEETPDTC115E seriesNPN resistor-equipped transistors; R1 = 100 k, R2 = 100 kProduct data sheet 2004 Aug 06Supersedes data of 2004 Apr 06NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC115E seriesR1 = 100 k, R2 = 100 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI

PDTC144V seriesNPN resistor-equipped transistors; R1 = 47 k, R2 = 10 kRev. 04 16 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN resistor-equipped transistors.Table 1. Product overviewType number Package PNP complementNXP JEITAPDTC144VE SOT416 SC-75 PDTA144VEPDTC144VK SOT346 SC-59A PDTA144VKPDTC144VM SOT883 SC-101 PDTA144VMPDTC144VS[1

PDTC124X seriesNPN resistor-equipped transistors; R1 = 22 k, R2 = 47 kRev. 07 16 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTC124XE SOT416 SC-75 - PDTA124XEPDTC124XEF SOT490 SC-89 - PDTA124XEFPDTC124XK SOT346 SC-59

PDTC123Y seriesNPN resistor-equipped transistors; R1 = 2.2 k, R2 = 10 kRev. 04 16 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTC123YE SOT416 SC-75 - PDTA123YEPDTC123YK SOT346 SC-59A TO-236 PDTA123YKPDTC123YM SOT883

DISCRETE SEMICONDUCTORS DATA SHEETPDTC123E seriesNPN resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 kProduct data sheet 2004 Aug 06Supersedes data of 2004 Mar 18NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC123E seriesR1 = 2.2 k, R2 = 2.2 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI

PDTC123Y seriesNPN resistor-equipped transistors; R1 = 2.2 k, R2 = 10 kRev. 04 16 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTC123YE SOT416 SC-75 - PDTA123YEPDTC123YK SOT346 SC-59A TO-236 PDTA123YKPDTC123YM SOT883

DISCRETE SEMICONDUCTORS DATA SHEETPDTC144W seriesNPN resistor-equipped transistors; R1 = 47 k, R2 = 22 kProduct data sheet 2004 Aug 17Supersedes data of 2004 Mar 23NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC144W seriesR1 = 47 k, R2 = 22 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

KSC1983 NPN EPITAXIAL SILICON TRANSISTORHIGH POWER TRANSISTORTO-220ABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 6 V Collector Current IC 3 A Base Current IB 1 A Collector Dissipation ( TC=25 ) PC 30 W Junction Temperature TJ 150 1.Base 2.Collector 3.Emitter Stora

AC 127 npn-Transistor legierter npn-Germanium-Transistor Der Transistor AC 127 ist fr die Verwendung als NF-Verstrker geeignet. Die Anschlsse sind vom Gehuse elektrisch isoliert

100mA / 50V Digital transistors (with built-in resistors) DTC124EM / DTC124EE / DTC124EUA / DTC124EKA Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTC124EM1.20.32 Features (3)1)Built-in bias resistors enable the configuration of an inverter (1)(2)circuit without connecting external input resistors (see the 0.220.13equivalent circuit).

100mA / 50V Digital transistors (with built-in resistors) DTC143ZM / DTC143ZE / DTC143ZUA / DTC143ZKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation

DTC123TKADatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value SMT3VCEO50VIC100mA R12.2kSOT-346(SC-59) lFeatures lInner circuitl l1) Built-In Biasing Resistor2) Built-in bias resistors enable the configuration of an inve

DTA144WE / DTA144WUA / DTA144WKA / DTA144WSATransistorsTransistorsDTC144WE / DTC144WUA / DTC144WKA / DTC144WSA(94S-579-144W)(94S-701-C144W)477

TransistorsDigital transistors (built-in resistor)DTC124TE / DTC124TUA / DTC124TKADTC124TSAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow negative biasi

DTC144W seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutline EMT3 UMT3Parameter ValueOUT OUT VCC50VIN IN IC(MAX.)100mAGND GND R147kWDTC144WE DTC144WUA R2SOT-416 (SC-75A) 22kW SOT-323 (SC-70) SMT3lFeatures OUT 1) Built-In Biasing ResistorsIN 2) Built-in bias resistors enable the configuration ofGND

100mA / 50V Digital transistors (with built-in resistors) DTC144WE / DTC144WUA / DTC144WKA Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3(SC-75A)1.6 0.70.550.3 Features 1)Built-in bias resistors enable the configuration of an inverter ( )3circuit without connecting external input resistors. 2)The bias resistors consist of

DTC115EM / DTC115EE / DTC115EUATransistors DTC115EKA / DTC115ESADigital transistors (built-in resistors)DTC115EM / DTC115EE / DTC115EUADTC115EKA / DTC115ESA Equivalent circuit Features1) Built-in bias resistors enable the configuration of an inverter circuitR1 OUTwithout connecting external input resistors (see the equivalentINcircuit).R22) The bias resistors consist o

100mA / 50V Digital transistors (with built-in resistors) DTC115EEB Applications Dimensions (Unit : mm) EMT3FInverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting external input resistors (see equivalent circuit). 2) Each bias resistor is a thin-film resistor. Since they are completely insu

TransistorsDigital transistors (built-in resistors)DTC144EE / DTC144EUA / DTC144EKADTC144ESAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow negative bias

DTC115G seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutline UMT3 SMT3Parameter ValueCollector Collector VCEO50VBase Base IC100mAEmitter Emitter R 100kWDTC115GKA DTC115GUA SOT-346 (SC-59) SOT-323 (SC-70) lFeatures lInner circuit1) Built-In Biasing Resistors2) Built-in bias resistors enable the configuration o

100mA / 50V Digital transistors (with built-in resistors) DTC124EEB Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3F1.6 0.7 Features 0.261) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors (1) (2)

DTC114G seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutline UMT3 SMT3Parameter ValueCollector Collector VCEO50VBase Base IC100mAEmitter Emitter R 10kWDTC114GKA DTC114GUA SOT-346 (SC-59) SOT-323 (SC-70) lFeatures lInner circuit1) Built-In Biasing Resistors2) Built-in bias resistors enable the configuration of

DTC114Y seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R110kDTC114YM DTC114YEBR2 (SC-105AA) (SC-89)47k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of DTC114YE DTC114Y

100mA / 50V Digital transistors (with built-in resistors) DTC143TM / DTC143TE / DTC143TUA / DTC143TKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation t

(SPEC-A

DTC115G seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value UMT3 SMT3VCEO50VIC100mA R 100kDTC115GUA DTC115GKASOT-323(SC-70) SOT-346(SC-59) lFeatures lInner circuitl l1) Built-In Biasing Resi

DTC144VUA / DTC144VKA Transistors 100mA / 50V Digital transistor (with built-in resistors) DTC144VUA / DTC144VKA Applications External dimensions (Unit : mm) Inverter, Interface, Driver DTC144VUA2.0 0.90.3 0.2 0.7(3) Features 1) Built-in bias resistors enable the configuration of (2) (1)an inverter circuit without connecting external 0.65 0.65input resistors. (

100mA / 50V Digital transistors (with built-in resistors) DTC114TM / DTC114TE / DTC114TUA / DTC114TKA Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to

100mA / 50V Digital transistors (with built-in resistors) DTC143EM / DTC143EE / DTC143EUA / DTC143EKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation

2SC1741S Transistors Medium Power Transistor (32V, 0.5A) 2SC1741S Features External dimensions (Units : mm) 1) High ICMax. 2SC1741SICMax. = 0.5A 2) Low VCE(sat). 40.2 20.2Optimal for low voltage operation. 3) Complements the 2SA1036K / 2SA1577 / 2SA854S. 0.45+0.15-0.05 Structure Epitaxial planar type 0.45+0.152.5+0.4 0.5 -0.05-0.15NPN silicon tra

Transistors DTC114EUB 100mA / 50V Digital transistors (with built-in resistors) DTC114EUB Applications Dimensions (Unit : mm) Inverter, Interface, Driver UMT3F2.0 Features 0.90.321) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-

(94S-522-A115E)

100mA / 50V Digital transistors (with built-in resistors) DTC124XM / DTC124XE / DTC124XUA / DTC124XKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation

RGTH60TS65DGC13 650V 30A Field Stop Trench IGBT DatasheetlOutline TO-247GEVCES650VIC(100C)30AVCE(sat) (Typ.)1.6VPD194W(1)(2)(3)lFeatures lInner Circuit1) Low Collector - Emitter Saturation Voltage(2)(1) Gate2) High Speed Switching(2) Collector*13) Low Switching Loss & Soft Switching(3) Emitter(1)4) Built in Very Fast & Soft Recovery FRD*1 Built

TransistorsDigital transistors (built in resistor)DTC144TE / DTC144TUA / DTC144TKADTC144TSAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow negative biasi

100mA / 50V Digital transistors (with built-in resistor) DTC144TM / DTC144TE / DTC144TUA / DTC144TKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation to

DTC144E seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R147kDTC144EM DTC144EEBR2 (SC-105AA) (SC-89)47k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 47k 2) Built-in bias resistors enable the configuration of

DTC143E seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R14.7kDTC143EM DTC143EEBR2 (SC-105AA) (SC-89)4.7k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 4.7k 2) Built-in bias resistors enable the configuration o

DTC114T seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCEO50VIC100mA R110kDTC114TM DTC114TEB(SC-105AA) (SC-89) EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of DTC114TE DTC114TUB

Transistors DTC123JUB 100mA / 50V Digital transistors (with built-in resistors) DTC123JUB Applications Dimensions (Unit : mm) Inverter, Interface, Driver UMT3F2.0 Features 0.90.321) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-fi

DTC115TH / DTC115TUA / DTC115TKA / DTC115TSATransistorsDigital transistors (built in resistor)DTC115TH / DTC115TUA / DT115TKA / DTC115TSA External dimensions (Units : mm) Features1) Built-in bias resistors enable the configuration of anDTC115TH1.6 inverter circuit without connecting external input0.85(1) resistors.(2)(3)2) The bias resistors consist of thin-film re

DTC144T seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutline VMT3 EMT3Parameter ValueCollector Collector VCEO50VBase Base IC100mAEmitter Emitter R147kWDTC144TM DTC144TE (SC-105AA) SOT-416 (SC-75A) UMT3 SMT3Collector Collector lFeaturesBase Base 1) Built-In Biasing ResistorsEmitter Emitter 2)

100mA / 50V Digital transistors (with built-in resistors) DTC144WE / DTC144WUA / DTC144WKA Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3(SC-75A)1.6 0.70.550.3 Features 1)Built-in bias resistors enable the configuration of an inverter ( )3circuit without connecting external input resistors. 2)The bias resistors consist of

DTC144T seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3VCEO50VIC100mA R147kDTC144TM DTC144TE(SC-105AA) SOT-416(SC-75A) UMT3 SMT3lFeaturesl1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of DTC144TUA DTC144TK

DTC143T seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCEO50VIC100mA R14.7kDTC143TM DTC143TEB(SC-105AA) (SC-89) EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of DTC143TE DTC143TUB

100mA / 50V Digital transistors (with built-in resistors) DTC143XM / DTC143XE / DTC143XUA / DTC143XKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolati

DTC115TM / DTC115TE / DTC115TUA /Transistors DTC115TKA / DTC115TSADigital transistors (built in resistor)DTC115TM / DTC115TE / DTC115TUA /DTC115TKA / DTC115TSA External dimensions (Units : mm) Features1) Built-in bias resistors enable the configuration of anDTC115TM1.20.2 0.8 0.2 inverter circuit without connecting external input(2)(3) resistors.(1)2) The bias re

100mA / 50V Digital transistors (with built-in resistors) DTC144EB / DTC144EM / DTC144EE / DTC144EUA / DTC144EKA Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isol

TransistorsDigital transistors (built-in resistors)DTC123EE / DTC123EUA / DTC123EKADTC123ESAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow negative bias

(94S-576-A144

DTC124X seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutline VMT3 EMT3Parameter ValueOUT OUT VCC50VIN IN IC(MAX.)100mAGND GND R122kWDTC124XM DTC124XE R2(SC-105AA) 47kW SOT-416 (SC-75A) UMT3 SMT3OUT lFeaturesOUT 1) Built-In Biasing ResistorsIN IN 2) Built-in bias resistors enable the configuration

RGT80TS65DGC13 650V 40A Field Stop Trench IGBT DatasheetlOutline TO-247GEVCES650VIC(100C)40AVCE(sat) (Typ.)1.65VPD234W(1)(2)(3)lFeatures lInner Circuit1) Low Collector - Emitter Saturation Voltage(2)(1) Gate2) Low Switching Loss(2) Collector*13) Short Circuit Withstand Time 5s(3) Emitter(1)4) Built in Very Fast & Soft Recovery FRD*1 Built in F

TransistorsDigital transistors (built-in resistors)DTC124XE / DTC124XUA / DTC124XKADTC124XSAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow negative bias

DTC124E seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R122kDTC124EM DTC124EEBR2 (SC-105AA) (SC-89)22k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 22k 2) Built-in bias resistors enable the configuration of

(94-543-A124G

DTC143TCADatasheetNPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor)lOutlinelParameter Value SOT-23VCEO50VIC100mA R14.7k (SST3) lFeatures lInner circuitl l1) Built-In Biasing Resistor2) Built-in bias resistors enable the configuration of a

DTC124T seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlinelParameter Value VMT3 EMT3VCEO50VIC100mA R122kDTC124TM DTC124TEDTC124TMFHA DTC124TEFRA(SC-105AA) SOT-416(SC-75A) UMT3 SMT3lFeaturesl1) Built-In Biasing Resistor 2) Built-in bias resistors ena

UMC1N / FMC1ATransistorsTransistorsUMD12N / FMC7A(94S-815-AC143T)(96-475-AC144E)592

DTC124XCADatasheetNPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor)lOutlinelParameter Value SOT-23VCC50VIC(MAX.)100mA R122k R2 (SST3) 47k lFeatures lInner circuitl l1) Built-In Biasing Resistors, R1 = 22k, R2 = 47k2) Built-in bias resistors

TransistorsDigital transistors (built-in resistors)DTC113ZUA / DTC113ZKA / DTC113ZSAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) Each bias resistor is a thin-film re-sistor. Since they are completely in-sulated, the input can be negativ

100mA / 50V Digital transistors (with built-in resistors) DTC123JEB Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3F1.6 0.70.26 Features 1) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors (1) (2)

DTC115T seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutline VMT3 EMT3Parameter ValueCollector Collector VCEO50VBase Base IC100mAEmitter Emitter R1100kWDTC115TM DTC115TE (SC-105AA) SOT-416 (SC-75A) UMT3 SMT3Collector Collector lFeaturesBase Base 1) Built-In Biasing ResistorsEmitter Emitter 2)

DTC115E seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R1100kDTC115EM DTC115EEBR2 (SC-105AA) (SC-89)100k EMT3 UMT3lFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 100k 2) Built-in bias resistors enable the configuration of

DTA113TKATransistorsTransistorsDTC123TKA(SPEC-A113T)(SPEC-C123T)467

DTC124T seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3VCEO50VIC100mA R122kDTC124TM DTC124TE(SC-105AA) SOT-416(SC-75A) UMT3 SMT3lFeaturesl1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of DTC124TUA DTC124TK

100mA / 50V Digital transistors (with built-in resistors) DTC114EM / DTC114EE / DTC114EUA / DTC114EKA Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation t

Transistors DTC144EEB 100mA / 50V Digital transistors (with built-in resistors) DTC144EEB Applications Dimensions (Unit : mm)Inverter, Interface, DriverEMT3F1.6 0.7 Features 0.261) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting externalinput resistors (see equivalent circuit). 2) The bias resistors con

DTC123Y seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlinelParameter Value EMT3 UMT3VCC50VIC(MAX.)100mA R12.2kDTC123YEFRA DTC123YUAFRADTC123YE DTC123YUAR2 SOT-416(SC-75A) SOT-323(SC-70)10k SMT3 lFeaturesl1) Built-In

TransistorsDigital transistors (built-in resistor)DTC143TE / DTC143TUA / DTC143TKADTC143TSAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow negative biasi

DTC114T seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCEO50VIC100mA R110kDTC114TM DTC114TEB(SC-105AA) (SC-89) EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of DTC114TE DTC114TUB

DTC114E seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R110kDTC114EM DTC114EEBR2 (SC-105AA) (SC-89)10k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 10k 2) Built-in bias resistors enable the configuration of

DTC123Y seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutline EMT3 UMT3Parameter ValueOUT OUT VCC50VIN IN IC(MAX.)100mAGND GND R12.2kWDTC123YE DTC123YUA R2SOT-416 (SC-75A) 10kW SOT-323 (SC-70) SMT3lFeatures OUT 1) Built-In Biasing ResistorsIN 2) Built-in bias resistors enable the configuration ofGND

DTC144G seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value EMT3 UMT3VCEO50VIC100mA R 47kDTC144GE DTC144GUASOT-416(SC-75A) SOT-323(SC-70) SMT3 lFeaturesl1)Built-In Biasing Resistor2)Built-in bias resistors enab

Transistors DTC114EEB 100mA / 50V Digital transistors (with built-in resistors) DTC114EEB Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3F1.6 0.7 Features 0.261) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-f

100mA / 50V Digital transistors (with built-in resistors) DTC123JM / DTC123JE / DTC123JUA / DTC123JKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolati

TransistorsDigital transistors (built-in resistors)DTC143EE / DTC143EUA / DTC143EKADTC143ESAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow negative bias

RQ3C150BCPch -20V -37A Power MOSFETDatasheetlOutlinelVDSS-20VRDS(on)(Max.)6.7m HSMT8ID37APD20W lInner circuitllFeaturesl1) Low on - resistance2) High Power Package (HSMT8)3) Pb-free lead plating ; RoHS compliant4) Halogen Free5) 100% Rg and UIS testedlPackaging specificationslEmbossed Packing

DTC143T seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCEO50VIC100mA R14.7kDTC143TM DTC143TEB(SC-105AA) (SC-89) EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of DTC143TE DTC143TUB

100mA / 50V Digital transistors (with built-in resistors) DTC114WE / DTC114WUA / DTC114WKA Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3(SC-75A) 1.6 0.70.550.3 Features 1)Built-in bias resistors enable the configuration of an inverter ( )3circuit without connecting external input resistors. 2)The bias resistors consist o

DTC114T seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCEO50VIC100mA R110kDTC114TM DTC114TEB(SC-105AA) (SC-89) EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of DTC114TE DTC114TUB

100mA / 50V Digital transistors (with built-in resistors) DTC123JM / DTC123JE / DTC123JUA / DTC123JKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolati

DTC114G seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value UMT3 SMT3VCEO50VIC100mA R 10kDTC114GUA DTC114GKASOT-323(SC-70) SOT-346(SC-59) lFeatures lInner circuitl l1) Built-In Biasing Resis

DTC143X seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R14.7kDTC143XM DTC143XEBR2 (SC-105AA) (SC-89)10k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of DTC143XE DTC143

RF4C100BCDatasheetPch -20V -10A Middle Power MOSFETlOutlinel HUML2020L8VDSS-20VRDS(on)(Max.) 15.6mID 10APD2W lInner circuitllFeaturesl1) Low on - resistance.2) High Power small mold Package(HUML2020L8).3) Pb-free lead plating ; RoHS compliant.4) Halog

DTC124T seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutline VMT3 EMT3Parameter ValueCollector Collector VCEO50VBase Base IC100mAEmitter Emitter R122kWDTC124TM DTC124TE (SC-105AA) SOT-416 (SC-75A) UMT3 SMT3Collector Collector lFeaturesBase Base 1) Built-In Biasing ResistorsEmitter Emitter 2)

DTC124G seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutline UMT3 SMT3Parameter ValueCollector Collector VCEO50VBase Base IC100mAEmitter Emitter R 22kWDTC124GKA DTC124GUA SOT-346 (SC-59) SOT-323 (SC-70) lFeatures lInner circuit1) Built-In Biasing Resistors2) Built-in bias resistors enable the configuration of

100mA / 50V Digital transistor (with built-in resistor) DTC125TUA / DTC125TKA Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTC125TUA2.0 0.90.3 0.2 0.7 Features (3)1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thin-film resistors with co

100mA / 50V Digital transistors (with built-in resistors) DTC114YM / DTC114YE / DTC114YUA / DTC114YKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation

DTC144G seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value EMT3 UMT3VCEO50VIC100mA R 47kDTC144GE DTC144GUASOT-416(SC-75A) SOT-323(SC-70) SMT3 lFeaturesl1)Built-In Biasing Resistor2)Built-in bias resistors enab

100mA / 50V Digital transistors (with built-in resistors) DTC114EB / DTC114EM / DTC114EE / DTC114EUA / DTC114EKA Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isol

DTC124TM / DTC124TE / DTC124TUA / Transistors DTC124TKA / DTC124TSA Digital transistors (built-in resistor) DTC124TM / DTC124TE / DTC124TUA / DTC124TKA / DTC124TSA External dimensions (Unit : mm) Features 1) Built-in bias resistors enable the configuration of an 1.2DTC124TM0.2 0.8 0.2inverter circuit without connecting external input (2)(3)resistors (see equivalent

DTC114GUA / DTC114GKA / DTC114GSA Transistors Digital transistors (built-in resistor) DTC114GUA / DTC114GKA / DTC114GSA External dimensions (Unit : mm) Features 1) The built-in bias resistors consist of thin-film resistors DTC114GUAwith complete isolation to allow negative biasing of the input, and parasitic effects are almost completely 1.25eliminated. 2.12) Only th

100mA / 50V Digital transistors (with built-in resistors) DTC115EM / DTC115EE / DTC115EUA / DTC115EKA Applications Inner circuit Inverter, Interface, Driver R1 OUTINR2 Features GND1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). IN OUT2) The bias resistors consist of t

100mA / 50V Digital transistors (with built-in resistors) DTC123EM / DTC123EE / DTC123EUA / DTC123EKA Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation t

DTC143E seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R14.7kDTC143EM DTC143EEBR2 (SC-105AA) (SC-89)4.7k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 4.7k 2) Built-in bias resistors enable the configuration o

Transistors DTC124EUB 100mA / 50V Digital transistors (with built-in resistors) DTC124EUB Applications Dimensions (Unit : mm) Inverter, Interface, Driver UMT3F2.0 Features 0.90.321) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-

Transistors DTC144EUB 100mA / 50V Digital transistors (with built-in resistors) DTC144EUB Applications Dimensions (Unit : mm) Inverter, Interface, Driver UMT3F2.0 Features 0.90.321) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-

DTC125TUA / DTC125TKA / DTC125TSATransistorsDigital transistor (built-in resistor)DTC125TUA / DTC125TKA / DTC125TSA Features External dimensions (Units : mm)1) Built-in bias resistors enable the configuration of anDTC125TUAinverter circuit without connecting external inputresistors.1.252) The bias resistors consist of thin-film resistors with2.1complete isolation to allo

DTC123E seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutline VMT3 EMT3Parameter ValueOUT OUT VCC50VIN IN IC(MAX.) GND 100mAGND R12.2kWDTC123EM DTC123EE R2(SC-105AA) SOT-416 (SC-75A) 2.2kW UMT3 SMT3OUT OUT lFeaturesIN 1) Built-In Biasing Resistors, R1 = R2 = 2.2kW.IN GND GND 2) Built-in bias resi

100mA / 50V Digital transistors (with built-in resistors) DTC124XM / DTC124XE / DTC124XUA / DTC124XKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation

DTC123EM / DTC123EE / DTC123EUATransistors DTC123EKA / DTC123ESADigital transistors (built-in resistors)DTC123EM / DTC123EE / DTC123EUADTC123EKA / DTC123ESA Equivalent circuit Features1) Built-in bias resistors enable the configuration of aninverter circuit without connecting external inputOUTR1resistors (see equivalent circuit). IN2) The bias resistors consist of thin-f

100mA / 50V Digital transistors (with built-in resistors) DTC123YE / DTC123YUA / DTC123YKA Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTC123YE1.6 0.70.550.3 Features ( )1)Built-in bias resistors enable the configuration of an 3 inverter circuit without connecting external input ( ) ( )2 1 resistors (see equivalent circuit). 0.2 0.2

Transistors DTC143EUB 100mA / 50V Digital transistors (with built-in resistors) DTC143EUB Applications Dimensions (Unit : mm) Inverter, Interface, Driver UMT3F2.0 Features 0.90.321) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-

TransistorsDigital transistors (built-in resistors)DTC124EE / DTC124EUA / DTC124EKADTC124ECA / DTC124ESAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow n

DTC115TH / DTC115TUA / DTC115TKA / DTC115TSATransistorsDigital transistors (built in resistor)DTC115TH / DTC115TUA / DT115TKA / DTC115TSA External dimensions (Units : mm) Features1) Built-in bias resistors enable the configuration of anDTC115TH1.6 inverter circuit without connecting external input0.85(1) resistors.(2)(3)2) The bias resistors consist of thin-film re

DTC144VUA / DTC144VKA Transistors 100mA / 50V Digital transistor (with built-in resistors) DTC144VUA / DTC144VKA Applications External dimensions (Unit : mm) Inverter, Interface, Driver DTC144VUA2.0 0.90.3 0.2 0.7(3) Features 1) Built-in bias resistors enable the configuration of (2) (1)an inverter circuit without connecting external 0.65 0.65input resistors. (

DTC144E seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R147kDTC144EM DTC144EEBR2 (SC-105AA) (SC-89)47k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 47k 2) Built-in bias resistors enable the configuration of

100mA / 50V Digital transistors (with built-in resistors) DTC115TM / DTC115TE / DTC115TUA / DTC115TKA Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTC115TM1.20.32 Features (3)1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input (1)(2)0.220.13 resistors. 0.4 0.4 0.52)The bias re

Transistors DTC143XUB 100mA / 50V Digital transistors (with built-in resistors) DTC143XUB Applications Dimensions (Unit : mm) Inverter, Interface, Driver UMT3F2.0 Features 0.90.321) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-

100mA / 50V Digital transistors (with built-in resistors) DTC124GUA / DTC124GKA Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTC124GUA2.0 0.90.3 0.2 0.7 Features (3)1)The built-in bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminate

100mA / 50V Digital transistors (with built-in resistors) DTC144EM / DTC144EE / DTC144EUA / DTC144EKA Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation t

DTC125TUA / DTC125TKA / DTC125TSA Transistors Digital transistor (built-in resistor) DTC125TUA / DTC125TKA / DTC125TSA Features External dimensions (Unit : mm) 1) Built-in bias resistors enable the configuration DTC125TUAof an inverter circuit without connecting external input resistors. 1.252) The bias resistors consist of thin-film resistors 2.1with complete isolatio

2SD1949 / 2SD1484K / 2SC1741STransistorsTransistors2SC3359S(96-678-D15)(SPEC-D16)318

DTC143Z seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R14.7kDTC143ZM DTC143ZEBR2 (SC-105AA) (SC-89)47k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of DTC143ZE DTC143

DTC143EM / DTC143EE / DTC143EUA Transistors DTC143EKA / DTC143ESA 100mA / 50V Digital transistors (with built-in resistors) DTC143EM / DTC143EE / DTC143EUA / DTC143EKA / DTC143ESA Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).

(94S-510-A114G

100mA / 50V Digital transistors (with built-in resistor) DTC124TM / DTC124TE / DTC124TUA / DTC124TKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation t

TransistorsDigital transistors (built-in resistors)DTC143ZE / DTC143ZUA / DTC143ZKADTC143ZCA / DTC143ZSAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow n

2SB852K / 2SA830STransistorsTransistors2SD1383K / 2SC1645S(96-118-B20)(96-205-D20)280Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document a

DTC123E seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlinelParameter Value VMT3 EMT3VCC50VIC(MAX.)100mA R12.2kDTC123EM DTC123EEDTC123EMFHA DTC123EEFRAR2 (SC-105AA) SOT-416(SC-75A)2.2k UMT3 SMT3lFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 2.2k

100mA / 50V Digital transistors (with built-in resistors) DTC114YEB Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3F1.6 0.70.26 Features (3)1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors (1) (2)0

DTC114T seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutline VMT3 EMT3FParameter ValueCollector Collector VCEO50VBase Base IC100mAEmitter Emitter R110kWDTC114TM DTC114TEB (SC-105AA) (SC-89) EMT3 UMT3FCollector Collector lFeaturesBase Base 1) Built-In Biasing ResistorsEmitter Emitter 2) Built-in bia

2SA821STransistorsTransistors2SC1651S(94L-183-A35)(94L-519-C35)274

DTC114E seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R110kDTC114EM DTC114EEBR2 (SC-105AA) (SC-89)10k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 10k 2) Built-in bias resistors enable the configuration of

Transistors DTC143ZUB 100mA / 50V Digital transistors (with built-in resistors) DTC143ZUB Applications Dimensions (Unit : mm) Inverter, Interface, Driver UMT3F2.0 Features 0.90.321) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-

DTC123J seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R12.2kDTC123JM DTC123JEBR2 (SC-105AA) (SC-89)47k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of DTC123JE DTC123

TransistorsDigital transistors (built-in resistors)DTC143XE / DTC143XUA / DTC143XKADTC143XSAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow negative bias

100mA / 50V Digital transistors (with built-in resistors) DTC123YE / DTC123YUA / DTC123YKA Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTC123YE1.6 0.70.550.3 Features ( )1)Built-in bias resistors enable the configuration of an 3 inverter circuit without connecting external input ( ) ( )2 1 resistors (see equivalent circuit). 0.2 0.2

TransistorsDigital transistors (built-in resistors)DTC114EE / DTC114EUA / DTC114EKADTC114ECA / DTC114ESAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow n

DTC124X seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlinelParameter Value VMT3 EMT3VCC50VIC(MAX.)100mA R122kDTC124XMFHA DTC124XEFRADTC124XM DTC124XER2 (SC-105AA) SOT-416(SC-75A)47k UMT3 SMT3lFeaturesl1) Built-In Biasing Resistors 2) Built-in bias re

TransistorsDigital transistors (built-in resistors)DTC123YE / DTC123YUA / DTC123YKADTC123YSAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow negative bias

DTC115T seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3VCEO50VIC100mA R1100kDTC115TM DTC115TE(SC-105AA) SOT-416(SC-75A) UMT3 SMT3lFeaturesl1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of DTC115TUA DTC115T

DTC144T seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlinelParameter Value VMT3 EMT3VCEO50VIC100mA R147kDTC144TM DTC144TEDTC144TMFHA DTC144TEFRA(SC-105AA) SOT-416(SC-75A) UMT3 SMT3lFeaturesl1) Built-In Biasing Resistor 2) Built-in bias resistors

DTC124G seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value UMT3 SMT3VCEO50VIC100mA R 22kDTC124GUA DTC124GKASOT-323(SC-70) SOT-346(SC-59) lFeatures lInner circuitl l1) Built-In Biasing Resis

DTC143T seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCEO50VIC100mA R14.7kDTC143TM DTC143TEB(SC-105AA) (SC-89) EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of DTC143TE DTC143TUB

Transistors DTC143XEB 100mA / 50V Digital transistors (with built-in resistors) DTC143XEB Applications Dimensions (Unit : mm)Inverter, Interface, DriverEMT3F1.6 0.7 Features 0.261) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting externalinput resistors (see equivalent circuit). 2) The bias resistors con

Transistors DTC143ZEB 100mA / 50V Digital transistors (with built-in resistors) DTC143ZEB Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3F1.6 0.7 Features 0.261) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-f

DTC144GE / DTA144GUA / DTC144GKA / DTC144GSA Transistors Digital transistors (built-in resistor) DTC144GE / DTC144GUA / DTC144GKA / DTC144GSA Features 1) The built-in bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input, and parasitic effects are almost completely eliminated. 2) Only the on / off conditions need to be set fo

Transistors DTC143EEB 100mA / 50V Digital transistors (with built-in resistors) DTC143EEB Applications Dimensions (Unit : mm)Inverter, Interface, DriverEMT3F1.6 0.7 Features 0.261) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting externalinput resistors (see equivalent circuit). 2) The bias resistors con

100mA / 50V Digital transistors (with built-in resistors) DTC113ZUA / DTC113ZKA Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTC113ZUA2.0 0.9 Features 0.3 0.2 0.71)Built-in bias resistors enable the configuration of an (3) inverter circuit without connecting external input resistors (see equivalent circuit). 2)Each bias resistor is a thin-f

TransistorsDigital transistors (built-in resistors)DTC114YE / DTC114YUA / DTC114YKADTC114YSAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow negative bias

DTC115ECADatasheetNPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor)lOutlinelParameter Value SOT-23VCC50VIC(MAX.)100mA R1100k R2 (SST3) 100k lFeatures lInner circuitl l1) Built-In Biasing Resistors, R1 = R2 = 100k2) Built-in bias resistors enable th

General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Features Dimensions (Unit : mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC4081 2SC46172. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. (1)(2)(3)1.251.6 0.82.12.81.6Structure Epitaxial planar type 0.1Min. 0.1Min.0.3Min.NPN

TransistorsDigital transistors (built in resistor)DTC114TE / DTC114TUA / DTC114TKADTC114TCA / DTC114TSAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow ne

DTC113Z seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlinelParameter Value UMT3 SMT3VCC50VIC(MAX.)100mA R11kDTC113ZUA DTC113ZKADTC113ZUAFRA DTC113ZKAFRAR2 SOT-323(SC-70) SOT-346(SC-59)10k

TransistorsDigital transistors (built in resistor)DTC114TE / DTC114TUA / DTC114TKADTC114TCA / DTC114TSAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow ne

DTC123JE / DTC123JUA / DTC123JKA / DTC123JSATransistorDigital transistors (built-in resistors)DTC123JE / DTC123JUA / DTC123JKA / DTC123JSA Features External dimensions (Units : mm)1) Built-in bias resistors enable the1.60.2DTC123JEconfiguration of an inverter circuit1.00.1without connecting external input 0.70.10.5 0.5+0.1 +0.10.2-0.050.2-0.05 0.550.1resist

DTC124GUA / DTC124GKA / DTC124GSA Transistors Digital transistors (built-in resistor) DTC124GUA / DTC124GKA / DTC124GSA Features 1) The built-in bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input , and parasitic effects are almost completely eliminated. 2) Only the on / off conditions need to be set for operation, making d

(94S-570-A144G

DTC115T seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3VCEO50VIC100mA R1100kDTC115TM DTC115TE(SC-105AA) SOT-416(SC-75A) UMT3 SMT3lFeaturesl1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of DTC115TUA DTC115T

DTC113Z seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutline UMT3 SMT3Parameter ValueOUT OUT VCC50VIN IN IC(MAX.)100mAGND GND R11kWDTC113ZUA DTC113ZKA R210kW SOT-323 (SC-70) SOT-346 (SC-59) lFeatures lInner circuit1) Built-In Biasing Resistors2) Built-in bias resistors enable the configuration of an inverte

2SC2411K / 2SC4097 / 2SC1741STransistorsMedium Power Transistor (32V, 0.5A)2SC2411K / 2SC4097 / 2SC1741S Features External dimensions (Units : mm)1) High ICMax.2SC2411K 2SC4097ICMax. = 0.5mA2.90.22) Low VCE(sat).1.1+0.2 2.00.21.90.2 -0.11.30.1 0.90.10.80.10.95 0.95Optimal for low voltage operation.0.65 0.65 0.70.10.2(1) (2) (1) (2)3) Complemen

100mA / 50V Digital transistors (with built-in resistors) DTC114YM / DTC114YE / DTC114YUA / DTC114YKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation

DTC143Z seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R14.7kDTC143ZM DTC143ZEBR2 (SC-105AA) (SC-89)47k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of DTC143ZE DTC143

DTC124E seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R122kDTC124EM DTC124EEBR2 (SC-105AA) (SC-89)22k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 22k 2) Built-in bias resistors enable the configuration of

100mA / 50V Digital transistors (with built-in resistors) DTC113ZUA / DTC113ZKA Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTC113ZUA2.0 0.9 Features 0.3 0.2 0.71)Built-in bias resistors enable the configuration of an (3) inverter circuit without connecting external input resistors (see equivalent circuit). 2)Each bias resistor is a thin-f

Transistors DTC114YUB 100mA / 50V Digital transistors (with built-in resistors) DTC114YUB Applications Dimensions (Unit : mm) Inverter, Interface, Driver UMT3F2.0 Features 0.90.321) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-fi

DTC143T seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutline VMT3 EMT3FParameter ValueCollector Collector VCEO50VBase Base IC100mAEmitter Emitter R14.7kWDTC143TM DTC143TEB (SC-105AA) (SC-89) EMT3 UMT3FCollector Collector lFeaturesBase Base 1) Built-In Biasing ResistorsEmitter Emitter 2) Built-in bi

DTC115GUA / DTC115GKA Transistors 100mA / 50V Digital transistors (with built-in resistor) DTC115GUA / DTC115GKA Applications External dimensions (Unit : mm) Inverter, Interface, Driver DTC115GUA2.0 0.90.3 0.2 0.7 Features 1) The built-in bias resistors consist of thin-film (3)resistors with complete isolation to allow negative biasing of the input, and parasitic eff

DTC144G seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value EMT3 UMT3VCEO50VIC100mA R 47kDTC144GE DTC144GUASOT-416(SC-75A) SOT-323(SC-70) SMT3 lFeaturesl1)Built-In Biasing Resistor2)Built-in bias resistors enab

(94S-579-144W

DTC144T seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlinelParameter Value VMT3 EMT3VCEO50VIC100mA R147kDTC144TM DTC144TEDTC144TMFHA DTC144TEFRA(SC-105AA) SOT-416(SC-75A) UMT3 SMT3lFeaturesl1) Built-In Biasing Resistor 2) Built-in bias resistors

DTC125T seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutline UMT3 SMT3Parameter ValueCollector Collector VCEO50VBase Base IC100mAEmitter Emitter R1200kWDTC125TUA DTC125TKA SOT-323 (SC-70) SOT-346 (SC-59) lFeatures lInner circuit1) Built-In Biasing Resistors2) Built-in bias resistors enable the configuration of an i

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DDTC (R1 R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1R2 Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) B C A 0.15 0.30 0.22TOP VIEW "Green" Device (Note 3 and 4) B 0.75 0.85 0.80C 1.45 1.75 1.60

DDTC (R1R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) A Built-In Biasing Resistors, R1R2 SC-59 Lead Free/RoHS Compliant (Note 1) Dim Min Max "Green" Device, Note 2 and 3 B CA 0.35 0.50 B 1.50 1.70 Mechanical Data C 2.70 3.00 G Case:

DDTC (R1-ONLY SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Types Available (DDTA) Dim Min Max C Built-In Biasing Resistor, R1 only A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B 1.15 1.35 B C "Green" Device (Note 3 and 4) C 2.00 2.20 D 0.65 Nominal BEMe

DDC144NS DUAL NPN PRE-BIASED TRANSISTOR Please click here to visit our online spice models database.General Descriptions DDC144NS features discrete dual NPN transistors that can support continuous maximum current up to 100 mA. It is suited for applications where the load needs to be turned on and off using circuits like micro-controllers, comparators, etc., particularly at a

DMC1028UFDB COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID max Device BVDSS RDS(ON) max TA = +25C Low Input Capacitance 25m @ VGS = 4.5V 6.0A Low Profile, 0.6mm Max Height Q1 12V 30m @ VGS = 3.3V 5.5A ESD HBM Protected up to 1.5KV, MM Protected up to 150V. N-Channel 32m @ VGS = 2.5V 5.3A Totally Lea

DDTC (R1 R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1R2 Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) B C A 0.15 0.30 0.22TOP VIEW "Green" Device (Note 3 and 4) B 0.75 0.85 0.80C 1.45 1.75 1.60

DDC(xxxx)U NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT363 Complementary PNP Types Available (DDA) Case Material: Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Built-In Biasing Resistors Moisture Sensitivity: Level 1 per J-STD-020

DDTC (R1-ONLY SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Types Available (DDTA) Dim Min Max C Built-In Biasing Resistor, R1 only A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B 1.15 1.35 B C "Green" Device (Note 3 and 4) C 2.00 2.20 D 0.65 Nominal BEMe

DDTC (R1R2 SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 1) B 1.15 1.35 B C "Green" Device (Note 2 & 3) C 2.00 2.20 Mechanical Data D 0.65 No

DDTC (R2-ONLY SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SC-59 Complementary PNP Types Available (DDTA) C Dim Min Max Built-In Biasing Resistor, R2 only A 0.35 0.50 Lead Free/RoHS Compliant (Note 2) B CB 1.50 1.70 "Green" Device, Note 3 and 4 C 2.70 3.00 BEMechanical Data D 0.95

DDTC (R1 R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1R2 Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) B C A 0.15 0.30 0.22TOP VIEW "Green" Device (Note 3 and 4) B 0.75 0.85 0.80C 1.45 1.75 1.60

DDTC (R1R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) A Built-In Biasing Resistors, R1R2 SC-59 Lead Free/RoHS Compliant (Note 1) Dim Min Max "Green" Device, Note 2 and 3 B CA 0.35 0.50 B 1.50 1.70 Mechanical Data C 2.70 3.00 G Case:

DDTC (R1-ONLY SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SC-59 Complementary PNP Types Available (DDTA) CDim Min Max Built-In Biasing Resistor, R1 only A 0.35 0.50 Lead Free/RoHS Compliant (Note 2) B CB 1.50 1.70 "Green" Device, Note 3 and 4 C 2.70 3.00 Mechanical Data EBD 0.9

DDTC (R1R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) A Built-In Biasing Resistors, R1R2 SC-59 Lead Free/RoHS Compliant (Note 1) Dim Min Max "Green" Device, Note 2 and 3 B CA 0.35 0.50 B 1.50 1.70 Mechanical Data C 2.70 3.00 G Case:

DDTC (R2-ONLY SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-523 Complementary PNP Types Available (DDTA) A Built-In Biasing Resistor, R2 only Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) CA 0.15 0.30 0.22 "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 B CTOP VIEWC 1.45 1.75 1.60

DDC (xxxx) H NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-563 Complementary PNP Types Available Dim Min Max Typ(DDA) A 0.15 0.30 0.25 Built-In Biasing Resistors BC Lead Free By Design/RoHS Compliant (Note 3) NXXYMB 1.10 1.25 1.20 "Green" Device (Note 4 and 5) C 1.55 1.70 1.60D 0.50 D

DDTC144ELP PRE-BIASED (R1=R2) SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Type Available (DDTA144ELP) 23E Ultra-Small Leadless Surface Mount Package Ideally Suited for Automated Assembly Processes C R2R1 Lead Free By Design/RoHS Compliant (Note 1) 1B "Green" Device (Note 2)

DDTC (R1R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) A Built-In Biasing Resistors, R1R2 SC-59 Lead Free/RoHS Compliant (Note 1) Dim Min Max "Green" Device, Note 2 and 3 B CA 0.35 0.50 B 1.50 1.70 Mechanical Data C 2.70 3.00 G Case:

DDTC (R1 R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1R2 Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) B C A 0.15 0.30 0.22TOP VIEW "Green" Device (Note 3 and 4) B 0.75 0.85 0.80C 1.45 1.75 1.60

DDTC114ELPPRE-BIASED (R1 = R2) SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: DFN1006-3 Ultra-Small Leadless Surface Mount Package Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Ideally Suited for Automated Assembly Processes Moisture Sens

DDTC (R1 R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1R2 Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) B C A 0.15 0.30 0.22TOP VIEW "Green" Device (Note 3 and 4) B 0.75 0.85 0.80C 1.45 1.75 1.60

DDC144TU DUAL NPN TRANSISTORS WITH 47K OHM BASE RESISTOR Please click here to visit our online spice models database.General Description DDC144TU is best suited for logic switching applications using control circuits like micro-controllers, comparators, etc. It features two discrete NPN transistors which can support maximum continuous current of 100 mA. NPN transistors can

DDTC (R1-ONLY SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Types Available (DDTA) Dim Min Max C Built-In Biasing Resistor, R1 only A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B 1.15 1.35 B C "Green" Device (Note 3 and 4) C 2.00 2.20 D 0.65 Nominal BEMe

DDTC (R1R2 SERIES) CANPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Product Summary Features and Benefits Epitaxial Planar Die Construction Part Number R1 (NOM) R2 (NOM) Complementary PNP Types Available (DDTA) DDTC113ZCA 1K 10K Built-In Biasing Resistors, R1R2 DDTC123YCA 2.2K 10K Lead Free, RoHS Compliant (Note 1) DDTC123JCA

DDTC (R1 = R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2 Dim Min Max Typ B C Lead Free/RoHS Compliant (Note 1) TOP VIEWA 0.15 0.30 0.22 "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 C 1.45 1.75 1.60 M

DDTC (R1 = R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SC-59 Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1 = R2 A 0.35 0.50 Lead Free/RoHS Compliant (Note 2) "Green" Device, Note 3 and 4 B C B 1.50 1.70 C 2.70 3.00 D 0.95 Mechanical Data GG

DDTC (R1 R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1R2 Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) B C A 0.15 0.30 0.22TOP VIEW "Green" Device (Note 3 and 4) B 0.75 0.85 0.80C 1.45 1.75 1.60

DDTC (R1-ONLY SERIES) ENPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT523 Complementary PNP Types Available (DDTA) Case Material: Molded Plastic, Green Molding Compound (Notes 2 & 3). UL Flammability Classification Rating 94V-0 Built-In Biasing Resistor, R1 only Moisture Sensitiv

DDC (LO-R1) U NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-363 Complementary PNP Types Available (DDA) Dim Min Max Built-In Biasing Resistors A 0.10 0.30 Lead Free/RoHS Compliant (Note 3) B 1.15 1.35 B C "Green" Device (Note 4 and 5) NXX YMC 2.00 2.20 D 0.65 Nominal Mechanical Data

DDTC (R2-ONLY SERIES) CA NPN PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) A Built-In Biasing Resistor, R2 only CSOT-23 Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2 and 3) Dim M

DDTC (R1R2 SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 1) B 1.15 1.35 B C "Green" Device (Note 2 & 3) C 2.00 2.20 Mechanical Data D 0.65 No

DDTC (R1-ONLY SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Types Available (DDTA) Dim Min Max C Built-In Biasing Resistor, R1 only A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B 1.15 1.35 B C "Green" Device (Note 3 and 4) C 2.00 2.20 D 0.65 Nominal BEMe

DDTC (R2-ONLY SERIES) CA NPN PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) A Built-In Biasing Resistor, R2 only CSOT-23 Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2 and 3) Dim M

DDC (xxxx) H NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-563 Complementary PNP Types Available Dim Min Max Typ(DDA) A 0.15 0.30 0.25 Built-In Biasing Resistors BC Lead Free By Design/RoHS Compliant (Note 3) NXXYMB 1.10 1.25 1.20 "Green" Device (Note 4 and 5) C 1.55 1.70 1.60D 0.50 D

DDTC (R1R2 SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 1) B 1.15 1.35 B C "Green" Device (Note 2 & 3) C 2.00 2.20 Mechanical Data D 0.65 No

DDTCxxxxLP (R1R2 Series)PRE-BIASED SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Epitaxial Planar Die Construction Case: DFN1006-3 Ultra-Small Leadless Surface Mount Package Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0

DDC (xxxx) H NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-563 Complementary PNP Types Available Dim Min Max Typ(DDA) A 0.15 0.30 0.25 Built-In Biasing Resistors BC Lead Free By Design/RoHS Compliant (Note 3) NXXYMB 1.10 1.25 1.20 "Green" Device (Note 4 and 5) C 1.55 1.70 1.60D 0.50 D

DDTC (R1-ONLY SERIES) ENPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT523 Complementary PNP Types Available (DDTA) Case Material: Molded Plastic, Green Molding Compound (Notes 2 & 3). UL Flammability Classification Rating 94V-0 Built-In Biasing Resistor, R1 only Moisture Sensitiv

DDTC (R1R2 SERIES) CANPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Product Summary Features and Benefits Epitaxial Planar Die Construction Part Number R1 (NOM) R2 (NOM) Complementary PNP Types Available (DDTA) DDTC113ZCA 1K 10K Built-In Biasing Resistors, R1R2 DDTC123YCA 2.2K 10K Lead Free, RoHS Compliant (Note 1) DDTC123JCA

DDTC (R1 = R2 SERIES) UANPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Product Summary Features and Benefits Epitaxial Planar Die Construction Part Number R1, R2 (NOM) Complementary PNP Types Available (DDTA) DDTC123EUA 2.2K Built-In Biasing Resistors, R1 = R2 DDTC143EUA 4.7K Lead Free, RoHS Compliant (Note 1) Halogen and Antimony Free "Gr

DDTC (R1R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) A Built-In Biasing Resistors, R1R2 SC-59 Lead Free/RoHS Compliant (Note 1) Dim Min Max "Green" Device, Note 2 and 3 B CA 0.35 0.50 B 1.50 1.70 Mechanical Data C 2.70 3.00 G Case:

DDTC (R1-ONLY SERIES) ENPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT523 Complementary PNP Types Available (DDTA) Case Material: Molded Plastic, Green Molding Compound (Notes 2 & 3). UL Flammability Classification Rating 94V-0 Built-In Biasing Resistor, R1 only Moisture Sensitiv

DDTC (R1R2 SERIES) CANPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Product Summary Features and Benefits Epitaxial Planar Die Construction Part Number R1 (NOM) R2 (NOM) Complementary PNP Types Available (DDTA) DDTC113ZCA 1K 10K Built-In Biasing Resistors, R1R2 DDTC123YCA 2.2K 10K Lead Free, RoHS Compliant (Note 1) DDTC123JCA

DMC1229UFDBCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID MAX Device V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance Low Profile, 0.6mm Max Height 29m @ VGS = 4.5V 5.6A 34m @ VGS = 2.5V 5.1A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Q1 12V N-Channel 44m @ VGS = 1.8V 4.5A Halogen

DDTC (R1R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) A Built-In Biasing Resistors, R1R2 SC-59 Lead Free/RoHS Compliant (Note 1) Dim Min Max "Green" Device, Note 2 and 3 B CA 0.35 0.50 B 1.50 1.70 Mechanical Data C 2.70 3.00 G Case:

DDTC (LO-R1) U NPN PRE-BIASED 100 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A Complementary PNP Types Available (DDTA) SOT-323 Built-In Biasing Resistors Dim Min Max Lead Free/RoHS Compliant (Note 2) A 0.25 0.40 "Green" Device (Note 3 & 4) B CB 1.15 1.35 Mechanical Data C 2.00 2.20 Case: SOT-323 D 0.65 Nominal

DDTC (R1R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) A Built-In Biasing Resistors, R1R2 SC-59 Lead Free/RoHS Compliant (Note 1) Dim Min Max "Green" Device, Note 2 and 3 B CA 0.35 0.50 B 1.50 1.70 Mechanical Data C 2.70 3.00 G Case:

DDTC (R1 = R2 SERIES) EE NPN PRE-BIASED TRANSISTOR IN SOT523 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT523 Complementary PNP Types Available (DDTA) Case Material: Molded Plastic, Green Molding Compound Built-In Biasing Resistors, R1 = R2 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes

DDTC (R1R2 SERIES) CA NPN PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Epitaxial Planar Die Construction SOT-23 A Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1R2 A 0.37 0.51 Lead, Halogen and Antimony Free, RoHS Compliant TOP VIEW"G

DDTC (LO-R1) E NPN PRE-BIASED 100 mA SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Types Available (DDTA) Dim Min Max Typ Built-In Biasing Resistors A 0.15 0.30 0.22 Lead Free/RoHS Compliant (Note 2) TOP VIEW C B 0.75 0.85 0.80B "Green" Device (Note 3 and 4) C 1.45 1.75 1.60D 0.50GMechan

DDTC (R1 = R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SC-59 Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1 = R2 A 0.35 0.50 Lead Free/RoHS Compliant (Note 2) "Green" Device, Note 3 and 4 B C B 1.50 1.70 C 2.70 3.00 D 0.95 Mechanical Data GG

DDTC (R2-ONLY SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SC-59 Complementary PNP Types Available (DDTA) C Dim Min Max Built-In Biasing Resistor, R2 only A 0.35 0.50 Lead Free/RoHS Compliant (Note 2) B CB 1.50 1.70 "Green" Device, Note 3 and 4 C 2.70 3.00 BEMechanical Data D 0.95

DDTC (R1-ONLY SERIES) ENPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT523 Complementary PNP Types Available (DDTA) Case Material: Molded Plastic, Green Molding Compound (Notes 2 & 3). UL Flammability Classification Rating 94V-0 Built-In Biasing Resistor, R1 only Moisture Sensitiv

DDTC (R1-ONLY SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Types Available (DDTA) Dim Min Max C Built-In Biasing Resistor, R1 only A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B 1.15 1.35 B C "Green" Device (Note 3 and 4) C 2.00 2.20 D 0.65 Nominal BEMe

DDC (XXXX) U NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Package: SOT363 Complementary PNP Types Available (DDA) Package Material: Molded Plastic, Green Molding Compound. Built-In Biasing Resistors UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant

DDTC (R2-ONLY SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-523 Complementary PNP Types Available (DDTA) A Built-In Biasing Resistor, R2 only Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) CA 0.15 0.30 0.22 "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 B CTOP VIEWC 1.45 1.75 1.60

DDTC (LO-R1) E NPN PRE-BIASED 100 mA SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Types Available (DDTA) Dim Min Max Typ Built-In Biasing Resistors A 0.15 0.30 0.22 Lead Free/RoHS Compliant (Note 2) TOP VIEW C B 0.75 0.85 0.80B "Green" Device (Note 3 and 4) C 1.45 1.75 1.60D 0.50GMechan

DDTCxxxxLP (R1R2 Series)PRE-BIASED SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Epitaxial Planar Die Construction Case: DFN1006-3 Ultra-Small Leadless Surface Mount Package Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0

DDC (LO-R1) U NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-363 Complementary PNP Types Available (DDA) Dim Min Max Built-In Biasing Resistors A 0.10 0.30 Lead Free/RoHS Compliant (Note 3) B 1.15 1.35 B C "Green" Device (Note 4 and 5) NXX YMC 2.00 2.20 D 0.65 Nominal Mechanical Data

DDC (LO-R1) H NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-563 A Complementary PNP Types Available (DDA) Dim Min Max Typ Built-In Biasing Resistors A 0.15 0.30 0.25 Lead Free By Design/RoHS Compliant (Note 3) "Green" Device (Note 4 and 5) BB 1.10 1.25 1.20 CNXXYMC 1.55 1.70 1.60 Mech

DDTC (R2-ONLY SERIES) CA NPN PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) A Built-In Biasing Resistor, R2 only CSOT-23 Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2 and 3) Dim M

DDTC (R1 = R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SC-59 Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1 = R2 A 0.35 0.50 Lead Free/RoHS Compliant (Note 2) "Green" Device, Note 3 and 4 B C B 1.50 1.70 C 2.70 3.00 D 0.95 Mechanical Data GG

DDTC (R1 R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1R2 Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) B C A 0.15 0.30 0.22TOP VIEW "Green" Device (Note 3 and 4) B 0.75 0.85 0.80C 1.45 1.75 1.60

DMC1017UPDCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET POWERDI5060-8 Product Summary Features and Benefits Thermally Efficient Package-Cooler Running Applications ID Device V(BR)DSS RDS(ON) TA = +25C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 17m @ VGS = 4.5V 9.5A Q1 12V Low Input Capacitance 25m @ VGS = 2.5V 7.8A Fas

DDTC (R1 = R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2 Dim Min Max Typ B C Lead Free/RoHS Compliant (Note 1) TOP VIEWA 0.15 0.30 0.22 "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 C 1.45 1.75 1.60 M

DMHC10H170SFJ 100V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Features Low On-Resistance ID Device V(BR)DSS RDS(ON)MAX Low Input Capacitance TA = +25C Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 2.9A 160m @ VGS = 10V Q1 & Q4 100V Halogen and Antimony Free. Green Device (Note 3) 200m @ VGS = 4.5V 2.6A 250m

DDTC (R2-ONLY SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-523 Complementary PNP Types Available (DDTA) A Built-In Biasing Resistor, R2 only Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) CA 0.15 0.30 0.22 "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 B CTOP VIEWC 1.45 1.75 1.60

DDTC (R1R2 SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 1) B 1.15 1.35 B C "Green" Device (Note 2 & 3) C 2.00 2.20 Mechanical Data D 0.65 No

DDC (LO-R1) H NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-563 A Complementary PNP Types Available (DDA) Dim Min Max Typ Built-In Biasing Resistors A 0.15 0.30 0.25 Lead Free By Design/RoHS Compliant (Note 3) "Green" Device (Note 4 and 5) BB 1.10 1.25 1.20 CNXXYMC 1.55 1.70 1.60 Mech

DDTC (R1 = R2 SERIES) UANPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Product Summary Features and Benefits Epitaxial Planar Die Construction Part Number R1, R2 (NOM) Complementary PNP Types Available (DDTA) DDTC123EUA 2.2K Built-In Biasing Resistors, R1 = R2 DDTC143EUA 4.7K Lead Free, RoHS Compliant (Note 1) Halogen and Antimony Free "Gr

DMC1029UFDB COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX Device V(BR)DSS RDS(ON) max TA = +25 Low Input Capacitance C 29m @ VGS = 4.5V 5.6A Low Profile, 0.6mm Max Height Q1 34m @ VGS = 2.5V 5.1A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 12V N-Channel 44m @ VGS = 1.8V 4.5A Haloge

DDTC (LO-R1) E NPN PRE-BIASED 100 mA SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Types Available (DDTA) Dim Min Max Typ Built-In Biasing Resistors A 0.15 0.30 0.22 Lead Free/RoHS Compliant (Note 2) TOP VIEW C B 0.75 0.85 0.80B "Green" Device (Note 3 and 4) C 1.45 1.75 1.60D 0.50GMechan

DDTC (LO-R1) U NPN PRE-BIASED 100 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A Complementary PNP Types Available (DDTA) SOT-323 Built-In Biasing Resistors Dim Min Max Lead Free/RoHS Compliant (Note 2) A 0.25 0.40 "Green" Device (Note 3 & 4) B CB 1.15 1.35 Mechanical Data C 2.00 2.20 Case: SOT-323 D 0.65 Nominal

DDTC (R1-ONLY SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Types Available (DDTA) Dim Min Max C Built-In Biasing Resistor, R1 only A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B 1.15 1.35 B C "Green" Device (Note 3 and 4) C 2.00 2.20 D 0.65 Nominal BEMe

DDTC (R1R2 SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 1) B 1.15 1.35 B C "Green" Device (Note 2 & 3) C 2.00 2.20 Mechanical Data D 0.65 No

DDTC (R1 R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1R2 Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) B C A 0.15 0.30 0.22TOP VIEW "Green" Device (Note 3 and 4) B 0.75 0.85 0.80C 1.45 1.75 1.60

DDTC (R1R2 SERIES) CANPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Product Summary Features and Benefits Epitaxial Planar Die Construction Part Number R1 (NOM) R2 (NOM) Complementary PNP Types Available (DDTA) DDTC113ZCA 1K 10K Built-In Biasing Resistors, R1R2 DDTC123YCA 2.2K 10K Lead Free, RoHS Compliant (Note 1) DDTC123JCA

DDC (XXXX) H NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-563 Complementary PNP Types Available (DDA) Case Material: Molded Plastic; UL Flammability Classification Built-In Biasing Resistors Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Moisture Sensiti

DDTC (R1 = R2 SERIES) UANPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Product Summary Features and Benefits Epitaxial Planar Die Construction Part Number R1, R2 (NOM) Complementary PNP Types Available (DDTA) DDTC123EUA 2.2K Built-In Biasing Resistors, R1 = R2 DDTC143EUA 4.7K Lead Free, RoHS Compliant (Note 1) Halogen and Antimony Free "Gr

DDTC (LO-R1) E NPN PRE-BIASED 100 mA SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Types Available (DDTA) Dim Min Max Typ Built-In Biasing Resistors A 0.15 0.30 0.22 Lead Free/RoHS Compliant (Note 2) TOP VIEW C B 0.75 0.85 0.80B "Green" Device (Note 3 and 4) C 1.45 1.75 1.60D 0.50GMechan

DDTC (R1R2 SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 1) B 1.15 1.35 B C "Green" Device (Note 2 & 3) C 2.00 2.20 Mechanical Data D 0.65 No

ZXMHC10A07T8COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGESUMMARYN-Channel = V(BR)DSS = 100V : RDS(on) = 0.7 ; ID = 1.4AP-Channel = V(BR)DSS = -100V : RDS(on) = 1.0 ; ID = -1.3ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficie

DDTC (R1R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) A Built-In Biasing Resistors, R1R2 SC-59 Lead Free/RoHS Compliant (Note 1) Dim Min Max "Green" Device, Note 2 and 3 B CA 0.35 0.50 B 1.50 1.70 Mechanical Data C 2.70 3.00 G Case:

DDTC (R1-ONLY SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Types Available (DDTA) Dim Min Max C Built-In Biasing Resistor, R1 only A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B 1.15 1.35 B C "Green" Device (Note 3 and 4) C 2.00 2.20 D 0.65 Nominal BEMe

DDTC (R1R2 SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 1) B 1.15 1.35 B C "Green" Device (Note 2 & 3) C 2.00 2.20 Mechanical Data D 0.65 No

DDTC (R1 = R2 SERIES) UANPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Product Summary Features and Benefits Epitaxial Planar Die Construction Part Number R1, R2 (NOM) Complementary PNP Types Available (DDTA) DDTC123EUA 2.2K Built-In Biasing Resistors, R1 = R2 DDTC143EUA 4.7K Lead Free, RoHS Compliant (Note 1) Halogen and Antimony Free "Gr

DDTC (R1R2 SERIES) CANPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Product Summary Features and Benefits Epitaxial Planar Die Construction Part Number R1 (NOM) R2 (NOM) Complementary PNP Types Available (DDTA) DDTC113ZCA 1K 10K Built-In Biasing Resistors, R1R2 DDTC123YCA 2.2K 10K Lead Free, RoHS Compliant (Note 1) DDTC123JCA

DDTC (LO-R1) U NPN PRE-BIASED 100 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A Complementary PNP Types Available (DDTA) SOT-323 Built-In Biasing Resistors Dim Min Max Lead Free/RoHS Compliant (Note 2) A 0.25 0.40 "Green" Device (Note 3 & 4) B CB 1.15 1.35 Mechanical Data C 2.00 2.20 Case: SOT-323 D 0.65 Nominal

DDTC (R1R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) A Built-In Biasing Resistors, R1R2 SC-59 Lead Free/RoHS Compliant (Note 1) Dim Min Max "Green" Device, Note 2 and 3 B CA 0.35 0.50 B 1.50 1.70 Mechanical Data C 2.70 3.00 G Case:

DDC (LO-R1) U NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-363 Complementary PNP Types Available (DDA) Dim Min Max Built-In Biasing Resistors A 0.10 0.30 Lead Free/RoHS Compliant (Note 3) B 1.15 1.35 B C "Green" Device (Note 4 and 5) NXX YMC 2.00 2.20 D 0.65 Nominal Mechanical Data

DDTCxxxxLP (R1R2 Series)PRE-BIASED SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Epitaxial Planar Die Construction Case: DFN1006-3 Ultra-Small Leadless Surface Mount Package Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0

DDC (LO-R1) H NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-563 A Complementary PNP Types Available (DDA) Dim Min Max Typ Built-In Biasing Resistors A 0.15 0.30 0.25 Lead Free By Design/RoHS Compliant (Note 3) "Green" Device (Note 4 and 5) BB 1.10 1.25 1.20 CNXXYMC 1.55 1.70 1.60 Mech

DDTC (R1-ONLY SERIES) CA NPN PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) A Built-In Biasing Resistor, R1 only SOT-23 C Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2 and 3) Dim M

DDTC (R1 = R2 SERIES) UANPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Product Summary Features and Benefits Epitaxial Planar Die Construction Part Number R1, R2 (NOM) Complementary PNP Types Available (DDTA) DDTC123EUA 2.2K Built-In Biasing Resistors, R1 = R2 DDTC143EUA 4.7K Lead Free, RoHS Compliant (Note 1) Halogen and Antimony Free "Gr

DDTC (R1R2 SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 1) B 1.15 1.35 B C "Green" Device (Note 2 & 3) C 2.00 2.20 Mechanical Data D 0.65 No

DDTC (R2-ONLY SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTA) C Dim Min Max Built-In Biasing Resistor, R2 only A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B C "Green" Device (Note 3 and 4) B 1.15 1.35 C 2.00 2.20 Mechanical Data B EG

DDTC (R1R2 SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 1) B 1.15 1.35 B C "Green" Device (Note 2 & 3) C 2.00 2.20 Mechanical Data D 0.65 No

DDTCxxxxLP (R1R2 Series)PRE-BIASED SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Epitaxial Planar Die Construction Case: DFN1006-3 Ultra-Small Leadless Surface Mount Package Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0

DDTC (R2-ONLY SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SC-59 Complementary PNP Types Available (DDTA) C Dim Min Max Built-In Biasing Resistor, R2 only A 0.35 0.50 Lead Free/RoHS Compliant (Note 2) B CB 1.50 1.70 "Green" Device, Note 3 and 4 C 2.70 3.00 BEMechanical Data D 0.95

DDC(xxxx)UNPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT363 Complementary PNP Types Available (DDA) Case material: Molded Plastic. Green Molding Compound. Built-In Biasing Resistors Classification Rating 94V-0 Lead Free, RoHS Compliant (Note 1) Moisture Sensitiv

DDTC113TLPPRE-BIASED SMALL SIGNAL SURFACE MOUNT NPN TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: DFN1006-3 Ultra-Small Leadless Surface Mount Package Case Material: Molded Plastic. "Green Molding Compound. UL Flammability Classification Rating 94V-0 Ideally Suited for Automated Assembly Processes Moisture Sensitivity: Level

DDTC (R2-ONLY SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTA) C Dim Min Max Built-In Biasing Resistor, R2 only A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B C "Green" Device (Note 3 and 4) B 1.15 1.35 C 2.00 2.20 Mechanical Data B EG

DDTC (R1-ONLY SERIES) ENPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT523 Complementary PNP Types Available (DDTA) Case Material: Molded Plastic, Green Molding Compound (Notes 2 & 3). UL Flammability Classification Rating 94V-0 Built-In Biasing Resistor, R1 only Moisture Sensitiv

DDTC (R1-ONLY SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Types Available (DDTA) Dim Min Max C Built-In Biasing Resistor, R1 only A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B 1.15 1.35 B C "Green" Device (Note 3 and 4) C 2.00 2.20 D 0.65 Nominal BEMe

DDTC (R1 R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1R2 Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) B C A 0.15 0.30 0.22TOP VIEW "Green" Device (Note 3 and 4) B 0.75 0.85 0.80C 1.45 1.75 1.60

DDTC (R2-ONLY SERIES) CA NPN PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) A Built-In Biasing Resistor, R2 only CSOT-23 Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2 and 3) Dim M

DDTC (R2-ONLY SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SC-59 Complementary PNP Types Available (DDTA) C Dim Min Max Built-In Biasing Resistor, R2 only A 0.35 0.50 Lead Free/RoHS Compliant (Note 2) B CB 1.50 1.70 "Green" Device, Note 3 and 4 C 2.70 3.00 BEMechanical Data D 0.95

DDTC (R1-ONLY SERIES) ENPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT523 Complementary PNP Types Available (DDTA) Case Material: Molded Plastic, Green Molding Compound (Notes 2 & 3). UL Flammability Classification Rating 94V-0 Built-In Biasing Resistor, R1 only Moisture Sensitiv

DDTC (R1 = R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2 Dim Min Max Typ B C Lead Free/RoHS Compliant (Note 1) TOP VIEWA 0.15 0.30 0.22 "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 C 1.45 1.75 1.60 M

A Product Line ofDiodes IncorporatedZXMC10A816N8 100V SO8 Complementary Dual enhancement mode MOSFET Summary ID (A) Device V(BR)DSS (V) QG (nC) RDS(on) () TA= 25C 0.230 @ VGS= 10V 2.1 Q1 100 9.2 0.300 @ VGS= 4.5V 1.9 0.235 @ VGS= -10V -2.2 Q2 -100 16.5 0.320 @ VGS= -4.5V -1.9 Description This new generation complementary dual MOSFE

DDTC (R2-ONLY SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-523 Complementary PNP Types Available (DDTA) A Built-In Biasing Resistor, R2 only Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) CA 0.15 0.30 0.22 "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 B CTOP VIEWC 1.45 1.75 1.60

DDTC (R1R2 SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 1) B 1.15 1.35 B C "Green" Device (Note 2 & 3) C 2.00 2.20 Mechanical Data D 0.65 No

DDTC (R1-ONLY SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SC-59 Complementary PNP Types Available (DDTA) CDim Min Max Built-In Biasing Resistor, R1 only A 0.35 0.50 Lead Free/RoHS Compliant (Note 2) B CB 1.50 1.70 "Green" Device, Note 3 and 4 C 2.70 3.00 Mechanical Data EBD 0.9

DDTC (R1R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) A Built-In Biasing Resistors, R1R2 SC-59 Lead Free/RoHS Compliant (Note 1) Dim Min Max "Green" Device, Note 2 and 3 B CA 0.35 0.50 B 1.50 1.70 Mechanical Data C 2.70 3.00 G Case:

DDC (LO-R1) U NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-363 Complementary PNP Types Available (DDA) Dim Min Max Built-In Biasing Resistors A 0.10 0.30 Lead Free/RoHS Compliant (Note 3) B 1.15 1.35 B C "Green" Device (Note 4 and 5) NXX YMC 2.00 2.20 D 0.65 Nominal Mechanical Data

DDTC (R2-ONLY SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SC-59 Complementary PNP Types Available (DDTA) C Dim Min Max Built-In Biasing Resistor, R2 only A 0.35 0.50 Lead Free/RoHS Compliant (Note 2) B CB 1.50 1.70 "Green" Device, Note 3 and 4 C 2.70 3.00 BEMechanical Data D 0.95

DDTC (R1R2 SERIES) CANPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Product Summary Features and Benefits Epitaxial Planar Die Construction Part Number R1 (NOM) R2 (NOM) Complementary PNP Types Available (DDTA) DDTC113ZCA 1K 10K Built-In Biasing Resistors, R1R2 DDTC123YCA 2.2K 10K Lead Free, RoHS Compliant (Note 1) DDTC123JCA

DDTC(R1-ONLY SERIES) CANPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTORProduct Summary Features and Benefits Epitaxial Planar Die Construction Part Number R1 (NOM) Complementary PNP Types Available (DDTA) DDTC113TCA 1K Built-In Biasing Resistors, R1 only DDTC123TCA 2.2K Lead Free, RoHS Compliant (Note 1) DDTC143TCA 4.7K Halogen

DDTC (R1 ONLY SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT323 Built-In Biasing Resistor, R1 Only Case Material: Molded Plastic, Green Molding Compound; UL Flammability Classification Rating 94V-0 Surface Mount Package Suited for Automated Assembly Moisture Sensitiv

DDC (xxxx) H NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-563 Complementary PNP Types Available Dim Min Max Typ(DDA) A 0.15 0.30 0.25 Built-In Biasing Resistors BC Lead Free By Design/RoHS Compliant (Note 3) NXXYMB 1.10 1.25 1.20 "Green" Device (Note 4 and 5) C 1.55 1.70 1.60D 0.50 D

DDTC (R1 R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1R2 Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) B C A 0.15 0.30 0.22TOP VIEW "Green" Device (Note 3 and 4) B 0.75 0.85 0.80C 1.45 1.75 1.60

DDC (xxxx) U NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-363 Complementary PNP Types Available (DDA) Dim Min Max Built-In Biasing Resistors A 0.10 0.30 Lead Free/RoHS Compliant (Note 3) B CB 1.15 1.35 "Green" Device (Note 4 and 5) NXX YM C 2.00 2.20 D 0.65 Nominal Mechanical Data

DDTC (R1 R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1R2 Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) B C A 0.15 0.30 0.22TOP VIEW "Green" Device (Note 3 and 4) B 0.75 0.85 0.80C 1.45 1.75 1.60

DDTC (R1R2 SERIES) CANPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Product Summary Features and Benefits Epitaxial Planar Die Construction Part Number R1 (NOM) R2 (NOM) Complementary PNP Types Available (DDTA) DDTC113ZCA 1K 10K Built-In Biasing Resistors, R1R2 DDTC123YCA 2.2K 10K Lead Free, RoHS Compliant (Note 1) DDTC123JCA

DDTC (R1 = R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2 Dim Min Max Typ B C Lead Free/RoHS Compliant (Note 1) TOP VIEWA 0.15 0.30 0.22 "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 C 1.45 1.75 1.60 M

DDTC (R1 = R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2 Dim Min Max Typ B C Lead Free/RoHS Compliant (Note 1) TOP VIEWA 0.15 0.30 0.22 "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 C 1.45 1.75 1.60 M

DDTC (R1 = R2 SERIES) UANPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Product Summary Features and Benefits Epitaxial Planar Die Construction Part Number R1, R2 (NOM) Complementary PNP Types Available (DDTA) DDTC123EUA 2.2K Built-In Biasing Resistors, R1 = R2 DDTC143EUA 4.7K Lead Free, RoHS Compliant (Note 1) Halogen and Antimony Free "Gr

DDTC (R2-ONLY SERIES) CA NPN PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) A Built-In Biasing Resistor, R2 only CSOT-23 Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2 and 3) Dim M

DDTC (LO-R1) U NPN PRE-BIASED 100 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A Complementary PNP Types Available (DDTA) SOT-323 Built-In Biasing Resistors Dim Min Max Lead Free/RoHS Compliant (Note 2) A 0.25 0.40 "Green" Device (Note 3 & 4) B CB 1.15 1.35 Mechanical Data C 2.00 2.20 Case: SOT-323 D 0.65 Nominal

DDTC (R1-ONLY SERIES) ENPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT523 Complementary PNP Types Available (DDTA) Case Material: Molded Plastic, Green Molding Compound (Notes 2 & 3). UL Flammability Classification Rating 94V-0 Built-In Biasing Resistor, R1 only Moisture Sensitiv

DDC(xxxx)U NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT363 Complementary PNP Types Available (DDA) Case Material: Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Built-In Biasing Resistors Moisture Sensitivity: Level 1 per J-STD-020

DDTC (R1 = R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SC-59 Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1 = R2 A 0.35 0.50 Lead Free/RoHS Compliant (Note 2) "Green" Device, Note 3 and 4 B C B 1.50 1.70 C 2.70 3.00 D 0.95 Mechanical Data GG

DDTC (LO-R1) U NPN PRE-BIASED 100 mA SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A Complementary PNP Types Available (DDTA) SOT-323 Built-In Biasing Resistors Dim Min Max Lead Free/RoHS Compliant (Note 2) A 0.25 0.40 "Green" Device (Note 3 & 4) B CB 1.15 1.35 Mechanical Data C 2.00 2.20 Case: SOT-323 D 0.65 Nominal

DDC (LO-R1) U NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-363 Complementary PNP Types Available (DDA) Dim Min Max Built-In Biasing Resistors A 0.10 0.30 Lead Free/RoHS Compliant (Note 3) B 1.15 1.35 B C "Green" Device (Note 4 and 5) NXX YMC 2.00 2.20 D 0.65 Nominal Mechanical Data

DDTC (R1-ONLY SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Types Available (DDTA) Dim Min Max C Built-In Biasing Resistor, R1 only A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B 1.15 1.35 B C "Green" Device (Note 3 and 4) C 2.00 2.20 D 0.65 Nominal BEMe

DDTC (R1R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) A Built-In Biasing Resistors, R1R2 SC-59 Lead Free/RoHS Compliant (Note 1) Dim Min Max "Green" Device, Note 2 and 3 B CA 0.35 0.50 B 1.50 1.70 Mechanical Data C 2.70 3.00 G Case:

DDC (xxxx) H NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-563 Complementary PNP Types Available Dim Min Max Typ(DDA) A 0.15 0.30 0.25 Built-In Biasing Resistors BC Lead Free By Design/RoHS Compliant (Note 3) NXXYMB 1.10 1.25 1.20 "Green" Device (Note 4 and 5) C 1.55 1.70 1.60D 0.50 D

DDTC (R1R2 SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 1) B 1.15 1.35 B C "Green" Device (Note 2 & 3) C 2.00 2.20 Mechanical Data D 0.65 No

DDC (xxxx) H NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-563 Complementary PNP Types Available Dim Min Max Typ(DDA) A 0.15 0.30 0.25 Built-In Biasing Resistors BC Lead Free By Design/RoHS Compliant (Note 3) NXXYMB 1.10 1.25 1.20 "Green" Device (Note 4 and 5) C 1.55 1.70 1.60D 0.50 D

DDTC (R1R2 SERIES) CANPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Product Summary Features and Benefits Epitaxial Planar Die Construction Part Number R1 (NOM) R2 (NOM) Complementary PNP Types Available (DDTA) DDTC113ZCA 1K 10K Built-In Biasing Resistors, R1R2 DDTC123YCA 2.2K 10K Lead Free, RoHS Compliant (Note 1) DDTC123JCA

DMC1030UFDBCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features ID MAX Low On-ResistanceDevice V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance Low Profile, 0.6mm Max Height 34m @ VGS = 4.5V 5.1A ESD Protected Gate 40m @ VGS = 2.5V 4.7A Q1 12V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) N-Channel 50m @ VGS

DDTC (R1 = R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2 Dim Min Max Typ B C Lead Free/RoHS Compliant (Note 1) TOP VIEWA 0.15 0.30 0.22 "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 C 1.45 1.75 1.60 M

DDTC (R2-ONLY SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTA) C Dim Min Max Built-In Biasing Resistor, R2 only A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B C "Green" Device (Note 3 and 4) B 1.15 1.35 C 2.00 2.20 Mechanical Data B EG

DDTC (R1 = R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SC-59 Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1 = R2 A 0.35 0.50 Lead Free/RoHS Compliant (Note 2) "Green" Device, Note 3 and 4 B C B 1.50 1.70 C 2.70 3.00 D 0.95 Mechanical Data GG

DDTC (R1 R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1R2 Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) B C A 0.15 0.30 0.22TOP VIEW "Green" Device (Note 3 and 4) B 0.75 0.85 0.80C 1.45 1.75 1.60

DDC (xxxx) H NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-563 Complementary PNP Types Available Dim Min Max Typ(DDA) A 0.15 0.30 0.25 Built-In Biasing Resistors BC Lead Free By Design/RoHS Compliant (Note 3) NXXYMB 1.10 1.25 1.20 "Green" Device (Note 4 and 5) C 1.55 1.70 1.60D 0.50 D

DDTC (R2-ONLY SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTA) C Dim Min Max Built-In Biasing Resistor, R2 only A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B C "Green" Device (Note 3 and 4) B 1.15 1.35 C 2.00 2.20 Mechanical Data B EG

DDTC (R1R2 SERIES) CANPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Product Summary Features and Benefits Epitaxial Planar Die Construction Part Number R1 (NOM) R2 (NOM) Complementary PNP Types Available (DDTA) DDTC113ZCA 1K 10K Built-In Biasing Resistors, R1R2 DDTC123YCA 2.2K 10K Lead Free, RoHS Compliant (Note 1) DDTC123JCA

DDTC (R1 = R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SC-59 Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1 = R2 A 0.35 0.50 Lead Free/RoHS Compliant (Note 2) "Green" Device, Note 3 and 4 B C B 1.50 1.70 C 2.70 3.00 D 0.95 Mechanical Data GG

DDTC (R2-ONLY SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-323 Complementary PNP Types Available (DDTA) C Dim Min Max Built-In Biasing Resistor, R2 only A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B C "Green" Device (Note 3 and 4) B 1.15 1.35 C 2.00 2.20 Mechanical Data B EG

DDTC (R1R2 SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 1) B 1.15 1.35 B C "Green" Device (Note 2 & 3) C 2.00 2.20 Mechanical Data D 0.65 No

DDTC (R1-ONLY SERIES) ENPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT523 Complementary PNP Types Available (DDTA) Case Material: Molded Plastic, Green Molding Compound (Notes 2 & 3). UL Flammability Classification Rating 94V-0 Built-In Biasing Resistor, R1 only Moisture Sensitiv

DDC144TH NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT563 Nominal 47k Built-In Biasing Resistor Case Material: Molded Plastic, Green Molding Compound; UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Moisture Sensitivity

DDTC (R1 = R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2 Dim Min Max Typ B C Lead Free/RoHS Compliant (Note 1) TOP VIEWA 0.15 0.30 0.22 "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 C 1.45 1.75 1.60 M

DDC (LO-R1) H NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-563 A Complementary PNP Types Available (DDA) Dim Min Max Typ Built-In Biasing Resistors A 0.15 0.30 0.25 Lead Free By Design/RoHS Compliant (Note 3) "Green" Device (Note 4 and 5) BB 1.10 1.25 1.20 CNXXYMC 1.55 1.70 1.60 Mech

DDC (LO-R1) H NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-563 A Complementary PNP Types Available (DDA) Dim Min Max Typ Built-In Biasing Resistors A 0.15 0.30 0.25 Lead Free By Design/RoHS Compliant (Note 3) "Green" Device (Note 4 and 5) BB 1.10 1.25 1.20 CNXXYMC 1.55 1.70 1.60 Mech

DDTC (R1R2 SERIES) CANPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Product Summary Features and Benefits Epitaxial Planar Die Construction Part Number R1 (NOM) R2 (NOM) Complementary PNP Types Available (DDTA) DDTC113ZCA 1K 10K Built-In Biasing Resistors, R1R2 DDTC123YCA 2.2K 10K Lead Free, RoHS Compliant (Note 1) DDTC123JCA

DDTC (R1-ONLY SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Types Available (DDTA) C Built-In Biasing Resistor, R1 only Dim Min Max Typ B C Lead Free/RoHS Compliant (Note 2) TOP VIEWA 0.15 0.30 0.22 "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 B EC 1.45 1.75 1

DDTC (R1R2 SERIES) CANPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Product Summary Features and Benefits Epitaxial Planar Die Construction Part Number R1 (NOM) R2 (NOM) Complementary PNP Types Available (DDTA) DDTC113ZCA 1K 10K Built-In Biasing Resistors, R1R2 DDTC123YCA 2.2K 10K Lead Free, RoHS Compliant (Note 1) DDTC123JCA

DDTC (R1 = R2 SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1 = R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B CB 1.15 1.35 "Green" Device (Note 3 and 4) C 2.00 2.20 Mechanical Data D 0.65

DDTC (R1 = R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SC-59 Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1 = R2 A 0.35 0.50 Lead Free/RoHS Compliant (Note 2) "Green" Device, Note 3 and 4 B C B 1.50 1.70 C 2.70 3.00 D 0.95 Mechanical Data GG

DDC (xxxx) H NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-563 Complementary PNP Types Available Dim Min Max Typ(DDA) A 0.15 0.30 0.25 Built-In Biasing Resistors BC Lead Free By Design/RoHS Compliant (Note 3) NXXYMB 1.10 1.25 1.20 "Green" Device (Note 4 and 5) C 1.55 1.70 1.60D 0.50 D

DDTC(R1 = R2 SERIES) CANPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTORFeatures Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Complementary PNP Types Available (DDTA) Case material: Molded Plastic. Green Molding Compound. Built-In Biasing Resistors, R1 = R2 Classification Rating 94V-0 Totally Lead-Free & Fully RoHS complia

DDTC (R1R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) A Built-In Biasing Resistors, R1R2 SC-59 Lead Free/RoHS Compliant (Note 1) Dim Min Max "Green" Device, Note 2 and 3 B CA 0.35 0.50 B 1.50 1.70 Mechanical Data C 2.70 3.00 G Case:

DDTC (LO-R1) E NPN PRE-BIASED 100 mA SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Types Available (DDTA) Dim Min Max Typ Built-In Biasing Resistors A 0.15 0.30 0.22 Lead Free/RoHS Compliant (Note 2) TOP VIEW C B 0.75 0.85 0.80B "Green" Device (Note 3 and 4) C 1.45 1.75 1.60D 0.50GMechan

TypeBSC160N10NS3 GTM 3 Power-TransistorProduct SummaryVDS 100 V9 .1)+ )7%$ &-/ $# $# # -,3%/0)-,RDS(on),max 16m 9 # (!,,%* ,-/+ !* *%3%*ID 42 A9 5# %**%,1 '!1% # (!/'% 5 R product (FOM)DS(on)9 %/6 *-4 -, /%0)01!,# % RDS(on)PG-TDSON-89 8 -.%/!1),' 1%+ .%/!12/%9 " &/%% *%!$ .*!1),' - # -+ .*)!,11)9 2!*)&)%$ !# # -/$),' 1- for target application9 !*-'%, &/%%

IPC100N04S5-1R2OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 1.2 mW ID 100 A FeaturesPG-TDSON-8-34 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalan

TypeBSC100N06LS3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 60 V Ideal for high frequency switching and sync. rec.RDS(on),max 10 mW Optimized technology for DC/DC convertersID 50 A Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance N-channel, logic level 100% avalanche tested Pb-free plating; RoHS compli

IGC18T120T6L IGBT4 Low Power Chip FEATURES: 1200V Trench + Field Stop technology This chip is used for:C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications: G low / medium power drives E Chip Type VCE ICn Die Size Package IGC18T120T6L 1200V 15A 4.16 x 4.34 mm2 sawn on foil MECHANICAL

SIGC11T60SNC IGBT Chip in NPT-technology CFEATURES: This chip is used for: 600V NPT technology 100m chip IGBT Modules positive temperature coefficient easy paralleling Applications: GE drives Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4155-SIGC11T60SNC 600V 10A 3.25 x 3.25 mm2 sawn on foil A001 MECHANICAL PARAMETER: mm2

SIGC128T170R3E IGBT3 Power Chip Features: This chip is used for: 1700V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC128T170R3E 1700V 100A 11.33 x 11.33 mm2 sawn on foil Mechanical Paramet

IAUC100N04S6N015OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 1.5mWID 100 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche teste

SIGC121T120R2CS IGBT Chip in NPT-technology FEATURES: 1200V NPT technology 175m chip This chip is used for: C low turn-off losses IGBT Modules short tail current positive temperature coefficient Applications: easy paralleling G drives, SMPS, resonant integrated gate resistor E applications Chip Type VCE ICn Die Size Package Ordering Code

SIGC12T60NC IGBT Chip in NPT-technology CFEATURES: 600V NPT technology This chip is used for: 100m chip IGBT Modules positive temperature coefficient easy paralleling Applications: GE drives Chip Type VCE ICn Die Size Package Ordering Code Q67041-A4688-SIGC12T60NC 600V 10A 3.5 x 3.5 mm2 sawn on foil A001 MECHANICAL PARAMETER: mm2 Raster

IGC18T120T8QHigh Speed IGBT in Trench and Fieldstop TechnologyFeatures: Recommended for: 1200V Trench + Field stop technology discrete componentsC low switching losses positive temperature coefficientApplications: easy paralleling high frequency drivesG UPSE Welding Solar invertersChip Type VCE ICn Die Size PackageIGC18T120T8Q 1200V 15

SIGC100T65R3E IGBT3 Chip Features: Recommended for: 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications: short tail current drives positive temperature coefficient easy parallelingGE Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size PackageSIGC100T65R

IAUC100N04S6L020OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 2.0mWID 100 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche tested

IPC100N04S5L-2R6OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 2.6 mW ID 100 A FeaturesPG-TDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanc

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SIGC14T60NC IGBT Chip in NPT-technology CFEATURES: This chip is used for: 600V NPT technology 100m chip IGBT Modules positive temperature coefficient easy paralleling Applications: GE drives Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4135-SIGC14T60NC 600V 15A 3.8 x 3.8 mm2 sawn on foil A001 MECHANICAL PARAMETER: mm2 Rast

SIGC156T120R2CS IGBT Chip in NPT-technology FEATURES: 1200V NPT technology 175m chip This chip is used for: C low turn-off losses IGBT Modules short tail current positive temperature coefficient Applications: easy paralleling G drives, SMPS, resonant integrated gate resistor E applications Chip Type VCE ICn Die Size Package Ordering Code

BSC155N06NDMOSFETPG-TDSON-8-4OptiMOSTM-T2 Power Transistor, 60 V8 17Features 26354 Dual N-channel,Normal Level Fast switching MOSFETs 175C operating temperature Green product (RoHS compliant)182 7 100% Avalanche tested3 654 Optimized technology for drives applications Halogen-free according to IEC61249-2-21 Superior thermal resis

IGC19T65QEHigh Speed IGBT3 ChipFeatures: Recommended for: 650V Trench & Field Stop technology discrete components andmodules high speed switching series thirdCgeneration low VCE(sat) Applications: low EMI uninterruptible power supplies low turn-off losses welding convertersG positive temperature coefficient converters with high switching

IPC100N04S5-1R9OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 1.9 mW ID 100 A FeaturesPG-TDSON-8-34 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalan

SIGC10T60E IGBT3 Chip FEATURES: This chip is used for: 600V Trench & Field Stop technology power module C low VCE(sat) discrete components low turn-off losses short tail current Applications: positive temperature coefficient drivesG easy paralleling white goods E resonant applicationsChip Type VCE IC Die Size PackageSI

IGC142T120T6RH IGBT4 High Power Chip FEATURES: 1200V Trench + Field Stop technology This chip is used for:C low V medium / high power modules CEsat soft turn off positive temperature coefficient Applications: easy paralleling G medium / high power drives E Chip Type VCE ICn Die Size Package IGC142T120T6RH 1200V 150A 11.31 x 12.56 mm2 sawn

IAUC100N08S5N043OptiMOS-5 Power-TransistorProduct SummaryVDS 80 VRDS(on) 4.3mWID 100 AFeatures N-channel - Enhancement modePG-TDSON-8 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 1 100% Avalanche tested1Type Package MarkingPG-TDSON-8 5N08043IAUC100N08S5N043Maximum ratings,

SIGC15T60SE IGBT3 Chip FEATURES: This chip is used for: 600V Trench & Field Stop technology power module C low VCE(sat) discrete components low turn-off losses short tail current Applications: positive temperature coefficient G drives easy parallelingE Chip Type VCE IC Die Size PackageSIGC15T60SE 600V 30A 3.92 x 3.88 mm2 sawn on

SIGC186T170R3E IGBT3 Power Chip Features: This chip is used for: 1700V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy parallelingG E Chip Type VCE IC Die Size PackageSIGC186T170R3E 1700V 150A 13.63 x 13.63 mm2 sawn on foil Mechanical Parameters

SIGC156T120R2CIGBT Chip in NPT-technologyFeatures: This chip is used for: 1200V NPT technology power moduleCBSM100GD120DN2 low turn-off losses short tail currentApplications: positive temperature coefficient drives easy parallelingG integrated gate resistorEChip Type VCE IC Die Size PackageSIGC156T120R2C 1200V 100A 12.59 X 12.59 mm2 sawn

BSC112N06LDMOSFETPG-TDSON-8-4OptiMOSTM-T2 Power Transistor, 60 V8 17Features 26354 Dual N-channel, Logic level Fast switching MOSFETs for SMPS Optimized technology for Synchronous Rectification Pb-free plating; RoHS compliant182 7 100% Avalanche tested3 654 Superior Thermal Resistance Halogen-free according to IEC61249-2-21Product Va

SIGC109T120R3LE IGBT3 Power Chip Features: This chip is used for: 1200V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC109T120R3LE 1200V 100A 10.47 x 10.44 mm2 sawn on foil Mechanical Param

TypeBSC12DN20NS3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 200 V Optimized for dc-dc conversionRDS(on),max 125m N-channel, normal levelID 11.3 A Excellent gate charge x R product (FOM)DS(on) Low on-resistance RDS(on)PG-TDSON-8 150 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)

BSC120N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 12 mW Optimized technology for DC/DC convertersID 39 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superi

SIGC156T120R2CL IGBT Chip in NPT-technology FEATURES: This chip is used for: C 1200V NPT technology power module 180m chip BSM100GD120DLC low turn-off losses positive temperature coefficient Applications: easy paralleling G drives E integrated gate resistor Chip Type VCE ICn Die Size Package Ordering Code Q67041-SIGC156T120R2CL

BSC150N03LD GOptiMOS3 Power-TransistorsProduct SummaryFeaturesV 30 VDS Dual N-channel, logic levelR 15mDS(on),max Fast switching MOSFETs for SMPSI 20 ADPG-TDSON-8 Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on

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IGC168T170S8RH IGBT3 Power Chip Features: This chip is used for: 1700V Trench + Field stop technology power modules C low switching losses and saturation losses soft turn off Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package IGC168T170S8RH 1700V 150A 13.38 x 12.58 mm2 sawn on foil

IGC11T120T6L IGBT4 Low Power Chip FEATURES: 1200V Trench + Field Stop technology This chip is used for:C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications: G low / medium power drives E Chip Type VCE ICn Die Size Package IGC11T120T6L 1200V 8A 3.48 x 3.19 mm2 sawn on foil MECHANICAL P

TypeBSC16DN25NS3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 250 V Optimized for dc-dc conversionRDS(on),max 165mW N-channel, normal levelID 10.9 A Excellent gate charge x R product (FOM)DS(on) Low on-resistance RDS(on)PG-TDSON-8 150 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) f

SIGC121T120R2CL IGBT Chip in NPT-technology FEATURES: This chip is used for: C 1200V NPT technology power module 180m chip BSM75GD120DLC low turn-off losses positive temperature coefficient Applications: easy paralleling G drives E integrated gate resistor Chip Type VCE ICn Die Size Package Ordering Code Q67041-SIGC121T120R2CL

IAUC120N04S6N010OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 1.0mWID 120 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche teste

IGC11T120T8LIGBT4 Low Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficientApplications: easy paralleling low / medium power drives Qualified according to JEDEC for targetGapplications EChip Type VCE ICn1 ) Die Size PackageIGC11T120T8L 1200V 8A 3

BSC120N03MS GOptiMOS3 M-Series Power-MOSFET Product Summary VDS 30 V FeaturesRDS(on),max VGS=10 V 12 mW Optimized for 5V driver application (Notebook, VGA, POL)VGS=4.5 V 14 Low FOMSW for High Frequency SMPSID 39 A 100% Avalanche testedPG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)

IGC114T170S8RM IGBT3 Power Chip Features: This chip is used for: 1700V Trench + Field stop technology power modules C low switching losses soft turn off Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package IGC114T170S8RM 1700V 100A 9.47 x 12.08 mm2 sawn on foil Mechanical Parameters

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SIGC156T120R2CQ IGBT Chip in Fieldstop-technology FEATURES: This chip is used for: C 1200V Fieldstop technology 120m chip low turn-off losses IGBT Modules short tail current positive temperature coefficient Applications: integrated gate resistor G SMPS, resonant applications E Chip Type VCE ICn Die Size Package Ordering Code SIGC156T120R2CQ

SIGC158T170R3E IGBT3 Power Chip Features: This chip is used for: 1700V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC158T170R3E 1700V 125A 12.57 x 12.57 mm2 sawn on foil Mechanical Paramet

SIGC121T60NR2C IGBT Chip in NPT-technology FEATURES: This chip is used for: C 600V NPT technology 100m chip positive temperature coefficient IGBT Modules easy paralleling integrated gate resistor Applications: G drives E Chip Type VCE ICn Die Size Package Ordering Code Q67041-A4684-SIGC121T60NR2C 600V 150A 11 x 11 mm2 sawn on foil A001 MEC

BSC100N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 10 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 12 100% avalanche tested ID 44 A PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)DS

BSC160N15NS5MOSFETSuperSO8OptiMOSTM 5 Power-Transistor, 150 V5867Features 7685 N-channel, normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Very low reverse recovery charge (Qrr)4 150 C operating temperature132 2 Pb-free lead plating; RoHS compliant3 14 Qualified according to JEDEC

IGC142T120T8RLIGBT4 Low Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficientApplications: easy paralleling low / medium power drives Qualified according to JEDEC for targetGapplications EChip Type VCE ICn1 ) Die Size PackageIGC142T120T8RL 1200V

IGC114T170S8RH IGBT3 Power Chip Features: This chip is used for: 1700V Trench + Field stop technology power modules C low switching losses and saturation losses soft turn off Applications: positive temperature coefficient drives easy parallelingG E Chip Type VCE IC Die Size PackageIGC114T170S8RH 1700V 100A 9.47 x 12.08 mm2 sawn on foil Mech

IAUC100N04S6L014OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 1.4mWID 100 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche tested

BSC118N10NS GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 11.8mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 71 AD Very low on-resistance RDS(on) 150 C operating temperaturePG-TDSON-8 Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ide

SIGC109T120R3LE IGBT3 Chip Features: This chip is used for: 1200V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy parallelingG E Chip Type VCE IC Die Size PackageSIGC109T120R3LE 1200V 100A 10.47 x 10.44 mm2 sawn on foil Mechanical Parameters R

BSC150N03LD GOptiMOS3 Power-TransistorsProduct SummaryFeaturesV 30 VDS Dual N-channel, logic levelR 15mDS(on),max Fast switching MOSFETs for SMPSI 20 ADPG-TDSON-8 Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on

SIGC12T120E IGBT3 Power Chip Features: This chip is used for: 1200V Trench + Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC12T120E 1200V 8A 3.54 x 3.5 mm2 sawn on foil Mechanical Parameters Raste

SIGC14T60SNC IGBT Chip in NPT-technology CFEATURES: This chip is used for: 600V NPT technology 100m chip SGP15N60 short circuit prove positive temperature coefficient Applications: G easy paralleling E drives Chip Type VCE ICn Die Size Package Ordering Code Q67041-A4665-SIGC14T60SNC 600V 15A 3.8 x 3.8 mm2 sawn on foil A001 Q67041-A46

SIGC15T60 IGBT3 Chip FEATURES: This chip is used for: 600V Trench & Field Stop technology C power module low VCE(sat) discrete components low turn-off losses short tail current Applications: positive temperature coefficient G drives easy paralleling E Chip Type VCE ICn Die Size Package Ordering Code Q67050-SIGC15T60 600V 30

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SIGC16T120CS IGBT Chip in NPT-technology CFEATURES: 1200V NPT technology This chip is used for: 180m chip SGP07N120 short circuit prove positive temperature coefficient Applications: G easy paralleling drives, SMPS, resonant E applications Chip Type VCE ICn Die Size Package Ordering Code SIGC16T120CS 1200V 8A 4.04 x 4 mm2 sawn on foil Q67

IGC189T120T6RL IGBT4 Low Power Chip Features: 1200V Trench + Field Stop technology This chip is used for:C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications: G low / medium power drives E Chip Type VCE ICn Die Size Package IGC189T120T6RL 1200V 200A 13.62 x 13.87 mm2 sawn on foil MECH

SIGC10T65E IGBT3 Chip Features: Recommended for: 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications: short tail current drives positive temperature coefficient easy parallelingGE Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size PackageSIGC10T65E 650

IGC142T120T8RMIGBT4 Medium Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology medium power modulesC low switching losses soft turn offApplications: positive temperature coefficient medium power drives easy parallelingG Qualified according to JEDEC for targetEapplicationsChip Type VCE ICn1 ) Die Size PackageIGC142T12

IGC193T120T8RMIGBT4 Medium Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology medium power modulesC low switching losses soft turn offApplications: positive temperature coefficient medium power drives easy parallelingG Qualified according to JEDEC for targetEapplicationsChip Type VCE ICn Die Size PackageIGC193T120T8

BSC146N10LS5MOSFETSuperSO8OptiMOSTM 5 Power-Transistor, 100 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. Rec. 100% avalanche tested Superior thermal resistance N-channel, logic level4 Pb-free lead plating; RoHS compliant132 2 Halogen-free according to IEC61249-2-213 14Product validationFully qualified acco

SIGC156T60NR2C IGBT Chip in NPT-technology CFEATURES: 600V NPT technology This chip is used for: 100m chip IGBT-Modules short circuit prove positive temperature coefficient Applications: G easy paralleling E drives Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4013-SIGC156T60NR2C 600V 200A 12.5 x 12.5 mm2 sawn on foil A001 M

TypeBSC110N06NS3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 60 V Ideal for high frequency switching and sync. rec.RDS(on),max 11 mW Optimized technology for DC/DC convertersID 50 A Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compl

SIGC11T60NC IGBT Chip in NPT-technology CFEATURES: This chip is used for: 600V NPT technology 100m chip IGBT Modules positive temperature coefficient easy paralleling Applications: GE drives Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4158-SIGC11T60NC 600V 10A 3.25 x 3.25 mm2 sawn on foil A001 MECHANICAL PARAMETER: mm2 Ra

IAUC120N04S6N009OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 0.9mID 120 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche tes

IGC109T120T6RL IGBT4 Low Power Chip Features: 1200V Trench + Field stop technology This chip is used for:C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications: G low / medium power drives E Chip Type VCE ICn Die Size Package IGC109T120T6RL 1200V 110A 7.48 x 14.61 mm2 sawn on foil MECHA

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IGC10R60D TRENCHSTOPTM RC-Series for hard switching applications IGBT chip with monolithically integrated diode in packages offering space saving advantage Features: TRENCHSTOPTM Reverse Conducting (RC) technology for 600V applications offering: Optimised VCEsat and VF for low conduction losses Smooth switching performance leading to low EMI levels Very tight param

IGC109T120T6RM IGBT4 Medium Power Chip Features: 1200V Trench + Field stop technology This chip is used for:C low switching losses medium power modules soft turn off positive temperature coefficient Applications: easy paralleling G medium power drives E Chip Type VCE ICn Die Size Package IGC109T120T6RM 1200V 110A 7.48 x 14.61 mm2 sawn on f

IPC100N04S5-2R8OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 2.8 mW ID 100 A FeaturesPG-TDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanc

IGC189T120T8RLIGBT4 Low Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficientApplications: easy paralleling low / medium power drives Qualified according to JEDEC for targetGapplications EChip Type VCE ICn1 ) Die Size PackageIGC189T120T8RL 1200V

SIGC18T60SNC IGBT Chip in NPT-technology CFEATURES: This chip is used for: 600V NPT technology 100m chip SGP20N60 short circuit prove positive temperature coefficient Applications: G easy paralleling E drives Chip Type VCE ICn Die Size Package Ordering Code Q67041-S2856-SIGC18T60SNC 600V 20A 4.3 x 4.3 mm2 sawn on foil A001 Q67041-S28

SIGC12T60SNC IGBT Chip in NPT-technology CFEATURES: This chip is used for: 600V NPT technology 100m chip SGP10N60 short circuit prove positive temperature coefficient Applications: G easy paralleling E drives Chip Type VCE ICn Die Size Package Ordering Code Q67041-A4664-SIGC12T60SNC 600V 10A 3.5 x 3.5 mm2 sawn on foil A001 Q67041-A46

SIGC12T120 IGBT3 Chip FEATURES: This chip is used for: C 1200V Trench & Field Stop technology low turn-off losses power module short tail current positive temperature coefficient Applications: easy paralleling G drives E Chip Type VCE ICn Die Size Package Ordering Code Q67050-SIGC12T120 1200V 8A 3.54 x 3.5 mm2 sawn on foil A4102-A001 ME

SIGC158T170R3E IGBT3 Power Chip Features: This chip is used for: 1700V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy parallelingG E Chip Type VCE IC Die Size PackageSIGC158T170R3E 1700V 125A 12.57 x 12.57 mm2 sawn on foil Mechanical Parameters

IAUC100N04S6N028OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 2.8mWID 100 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche teste

SIGC158T120R3E IGBT3 Power Chip Features: This chip is used for: 1200V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC158T120R3E 1200V 150A 12.56 x 12.56 mm2 sawn on foil Mechanical Paramet

SIGC19T60SE IGBT 3 Chip Features: Recommended for: 600V Trench & Field Stop technology power module low VCE(sat) discrete components C low turn-off losses Applications: short tail current drives positive temperature coefficient white goods easy parallelingG resonant applications E Qualified according to JEDEC for target

SIGC104T170R2C IGBT Chip in NPT-technology CFEATURES: This chip is used for: 1700V NPT technology 280m chip chip only short circuit prove positive temperature coefficient Applications: G easy paralleling E drives Chip Type VCE ICn Die Size Package Ordering Code Q67041-A4695-SIGC104T170R2C 1700V 50A 10.12 x 10.18 mm2 sawn on foil A001

SIGC18T60NC IGBT Chip in NPT-technology CFEATURES: This chip is used for: 600V NPT technology 100m chip IGBT Modules positive temperature coefficient easy paralleling Applications: GE drives Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4139-SIGC18T60NC 600V 20A 4.3 x 4.3 mm2 sawn on foil A001 MECHANICAL PARAMETER: mm2 Rast

SIGC12T120LE IGBT3 Power Chip Features: 1200V Trench + Field Stop technology This chip is used for: C low turn-off losses power module short tail current positive temperature coefficient Applications: easy paralleling G drives E Chip Type VCE ICn Die Size Package SIGC12T120LE 1200V 8A 3.54 x 3.5 mm2 sawn on foil MECHANICAL PARAMETER Raster

BSC120N03MS GOptiMOS3 M-Series Power-MOSFET Product Summary VDS 30 V FeaturesRDS(on),max VGS=10 V 12 mW Optimized for 5V driver application (Notebook, VGA, POL)VGS=4.5 V 14 Low FOMSW for High Frequency SMPSID 39 A 100% Avalanche testedPG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)

SIGC121T120R2CIGBT Chip in NPT-technologyFeatures: This chip is used for: 1200V NPT technology power moduleCBSM 75GD120DN2 low turn-off losses short tail currentApplications: positive temperature coefficient drives easy parallelingG integrated gate resistorEChip Type VCE IC Die Size PackageSIGC121T120R2C 1200V 75A 11.08 X 11.08 mm2 sawn o

SIGC15T60E IGBT3 Chip FEATURES: This chip is used for: 600V Trench & Field Stop technology power module C low VCE(sat) discrete components low turn-off losses short tail current Applications: positive temperature coefficient G drives easy parallelingE Chip Type VCE IC Die Size PackageSIGC15T60E 600V 30A 3.92 x 3.88 mm2 sawn on f

SIGC144T170R2C IGBT Chip in NPT-technology Features: This chip is used for: 1700V NPT technology chip only C 280 m chip short circuit prove Applications: positive temperature coefficient drives easy parallelingG E Chip Type VCE IC Die Size PackageSIGC144T170R2C 1700V 75A 11.98 x 11.98 mm2 sawn on foil Mechanical Parameter Raster size 11

IGC10R60DETRENCHSTOPTM RC-Series for hard switching applicationsIGBT chip with monolithically integrated diode in packages offering space saving advantageFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for600V applications offering: Optimised VCEsat and VF for low conduction losses Smooth switching performance leading to low EMI levels Very tight parameter dist

BSC100N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 10 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 12 100% avalanche tested ID 44 A PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)DS

BSC110N15NS5MOSFETSuperSO8OptiMOSTM 5 Power-Transistor, 150 V5867Features 7685 N-channel, normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 150 C operating temperature4 Pb-free lead plating; RoHS compliant132 2 Qualified according to JEDEC1) for target application3 14 Ideal for hig

SIGC100T60R3E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology power moduleC low VCE(sat) low turn-off losses Applications: short tail current drives positive temperature coefficient G easy parallelingE Chip Type VCE IC Die Size PackageSIGC100T60R3E 600V 200A 9.73 x 10.23 mm2 sawn on foil Mechanical Par

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SIGC18T60UN High Speed IGBT Chip in NPT-technology CFEATURES: This chip is used for: low Eoff SGP20N60HS 600V NPT technology 100m chip Applications: G short circuit prove E Welding positive temperature coefficient PFC easy paralleling UPS Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4222-SIGC18T60UN 600V

SIGC185T170R2C IGBT Chip in NPT-technology CFEATURES: 1700V NPT technology This chip is used for: 280m chip IGBT-Module BSM100GB170DL short circuit prove positive temperature coefficient Applications: G easy paralleling E drives Chip Type VCE ICn Die Size Package Ordering Code Q67041-A4697-SIGC185T170R2C 1700V 100A 13.56 x 13.56 mm2 sawn

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IGC168T170S8RM IGBT3 Power Chip Features: This chip is used for: 1700V Trench + Field stop technology power modules C low switching losses soft turn off Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package IGC168T170S8RM 1700V 150A 13.38 x 12.58 mm2 sawn on foil Mechanical Parameters

SIGC128T170R3E IGBT3 Power Chip Features: This chip is used for: 1700V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy parallelingG E Chip Type VCE IC Die Size PackageSIGC128T170R3E 1700V 100A 11.33 x 11.33 mm2 sawn on foil Mechanical Parameters

IGC109T120T6RH IGBT4 High Power Chip Features: 1200V Trench + Field stop technology This chip is used for:C low V medium / high power modules CE(sat) soft turn off positive temperature coefficient Applications: easy paralleling G medium / high power drives E Chip Type VCE ICn Die Size Package IGC109T120T6RH 1200V 110A 7.48 x 14.61 mm2 saw

BSC13DN30NSFDMOSFETSuperSO8OptiMOSTM3 Power-Transistor, 300 V5867Features 7685 N-channel, normal level 175 C rated Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)4 Pb-free lead plating; RoHS compliant132 2 Qualified according to JEDEC1) for target application3 14 Halogen-free according to IEC

BSC120N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 12 mW Optimized technology for DC/DC convertersID 39 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superi

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IAUC100N04S6N022OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 2.2mWID 100 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche teste

SIGC10T60SE IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology power module C low VCE(sat) discrete components low turn-off losses short tail current Applications: positive temperature coefficient drivesG easy paralleling white goods E resonant applicationsChip Type VCE IC Die Size PackageS

SIGC15T65E IGBT3 Chip Features: Recommended for: 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications: short tail current drives positive temperature coefficient easy parallelingGE Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size PackageSIGC15T65E 650

IAUC120N04S6L008OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 0.8mID 120 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche test

IPC100N04S5L-1R1OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 1.1 mW ID 100 A FeaturesPG-TDSON-8-34 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalan

IGC10T65QEHigh Speed IGBT3 ChipFeatures: Recommended for: 650V Trench & Field Stop technology discrete components andmodules high speed switching series thirdCgeneration low VCE(sat) Applications: low EMI uninterruptible power supplies low turn-off losses welding convertersG positive temperature coefficient converters with high switching

IAUC100N04S6L025OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 2.5mWID 100 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche tested

SIGC158T120R3E IGBT3 Chip Features: This chip is used for: 1200V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy parallelingG E Chip Type VCE IC Die Size PackageSIGC158T120R3E 1200V 150A 12.56 x 12.56 mm2 sawn on foil Mechanical Parameters Ras

SIGC12T120LE IGBT3 Chip Features: 1200V Trench + Field Stop technology This chip is used for:C low turn-off losses power module short tail current positive temperature coefficient Applications: easy paralleling G drives E Chip Type VCE ICn Die Size Package SIGC12T120LE 1200V 8A 3.54 x 3.5 mm2 sawn on foil MECHANICAL PARAMETER Raster siz

IAUC100N10S5N040OptiMOSTM-5 Power-TransistorProduct SummaryVDS 100 VRDS(on) 4mID 100 AFeatures N-channel - Enhancement mode - Normal levelPG-TDSON-8 AEC qualified MSL1 up to 260C peak reflow 100% Avalanche tested Feasible for automatic optical inspection (AOI)1Type Package MarkingIAUC100N10S5N040 PG-TDSON-8 5N1N040Maximum ratings, at T =25

SIGC186T170R3E IGBT3 Power Chip Features: This chip is used for: 1700V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC186T170R3E 1700V 150A 13.63 x 13.63 mm2 sawn on foil Mechanical Paramet

IGC13T120T6L IGBT4 Low Power Chip Features: 1200V Trench + Field stop technology This chip is used for:C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications: G low / medium power drives E Chip Type VCE ICn Die Size Package IGC13T120T6L 1200V 10A 3.54 x 3.81 mm2 sawn on foil MECHANICAL

IGC100T65T8RMIGBT3 Chip Medium PowerFeatures: Recommended for: 650V Trench & Field Stop technology power modulesC high short circuit capability, self limitingshort circuit current positive temperature coefficient Applications: easy paralleling drivesG Qualified according to JEDEC for targetEapplicationsChip Type VCE ICn Die Size PackageIGC100T6

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IAUC120N04S6N013OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 1.3mWID 120 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche teste

SIGC16T120CIGBT Chip in NPT-technologyFeatures: This chip is used for: 1200V NPT technology power module CBUP 311D /BUP 212 short circuit prove positive temperature coefficientApplications: easy paralleling drivesGEChip Type VCE IC Die Size PackageSIGC16T120C 1200V 8A 4.04 x 4 mm2 sawn on foilMechanical ParameterRaster size 4.04 x 4Emitter pad

SIGC156T60SNR2C IGBT Chip in NPT-technology CFEATURES: 600V NPT technology This chip is used for: 100m chip IGBT-Modules short circuit prove positive temperature coefficient Applications: G easy paralleling E drives Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4154-SIGC156T60SNR2C 600V 200A 12.5 x 12.5 mm2 sawn on foil A003

IAUC120N04S6L012OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 1.2mWID 120 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche tested

BSC130P03LS GOptiMOS-P Power-TransistorProduct SummaryFeaturesVDS -30 V P-ChannelRDS(on),max 13mW Enhancement modeID -22.5 A Logic level 150C operating temperature Avalanche rated; RoHS compliantPG-TDSON-8 Vgs=25V, specially suited for notebook applications Halogen-free according to IEC61249-2-21 Pb-free lead plating; RoHS compliant

SIGC158T120R3LE IGBT3 Power Chip Features: This chip is used for: 1200V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC158T120R3LE 1200V 150A 12.56 x 12.56 mm2 sawn on foil Mechanical Param

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SIGC16T120CL IGBT Chip in NPT-technology CFEATURES: This chip is used for: 1200V NPT technology 180m chip chip only short circuit prove positive temperature coefficient Applications: G easy paralleling E drives Chip Type VCE ICn Die Size Package Ordering Code Q67041-A4703-SIGC16T120CL 1200V 8A 4.04 x 4 mm2 sawn on foil A003 MECHANI

SIGC109T120R3E IGBT3 Power Chip Features: This chip is used for: 1200V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC109T120R3E 1200V 100A 10.47 x 10.44 mm2 sawn on foil Mechanical Paramet

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IAUC100N10S5L040OptiMOSTM-5 Power-TransistorProduct SummaryVDS 100 VRDS(on) 4mWID 100 AFeatures N-channel - Enhancement mode - Logic levelPG-TDSON-8 AEC qualified MSL1 up to 260C peak reflow 100% Avalanche tested Feasible for automatic optical inspection (AOI)1Type Package MarkingIAUC100N10S5L040 PG-TDSON-8 5N10L040Maximum ratings, at T =25 C

IGC142T120T6RL IGBT4 Low Power Chip FEATURES: 1200V Trench + Field Stop technology This chip is used for:C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications: G low / medium power drives E Chip Type VCE ICn Die Size Package IGC142T120T6RL 1200V 150A 11.31 x 12.56 mm2 sawn on foil MECH

SIGC100T60R3E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology power moduleC low VCE(sat) low turn-off losses Applications: short tail current drives positive temperature coefficient G easy parallelingE Chip Type VCE IC Die Size PackageSIGC100T60R3E 600V 200A 9.73 x 10.23 mm2 sawn on foil Mechanical Par

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IPC100N04S5L-1R9OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 1.9 mW ID 100 A FeaturesPG-TDSON-8-34 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalan

IAUC120N04S6L009OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 0.9mWID 120 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche tested

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IGC142T120T6RM IGBT4 Medium Power Chip Features: 1200V Trench + Field stop technology This chip is used for:C low switching losses medium power modules soft turnoff positive temperature coefficient Applications: easy paralleling G medium power drives E Chip Type VCE ICn Die Size Package IGC142T120T6RM 1200V 150A 11.31 x 12.56 mm2 sawn on f

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-Transistor, 80 VBSC117N08NS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-Transistor, 80 VBSC117N08NS5SuperSO81 Description5867Features7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal re

SIGC101T170R3E IGBT3 Power Chip Features: This chip is used for: 1700V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC101T170R3E 1700V 75A 10.03 x 10.03 mm2 sawn on foil Mechanical Paramete

IPC100N04S5L-1R5OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 1.5 mW ID 100 A FeaturesPG-TDSON-8-34 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalan

IGC15T65QEHigh Speed IGBT3 ChipFeatures: Recommended for: 650V Trench & Field Stop technology discrete components andmodules high speed switching series thirdCgeneration low VCE(sat) Applications: low EMI uninterruptible power supplies low turn-off losses welding convertersG positive temperature coefficient converters with high switching

IGC18T120T8LIGBT4 Low Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficientApplications: easy paralleling low / medium power drives Qualified according to JEDEC for targetGapplications EChip Type VCE ICn1 ) Die Size PackageIGC18T120T8L 1200V 15A

SIGC15T60UN High Speed IGBT Chip in NPT-technology CFEATURES: This chip is used for: low Eoff SGB15N60HS 600V NPT technology 100m chip Applications: G short circuit prove E Welding positive temperature coefficient PFC easy paralleling UPS Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4221-SIGC15T60UN 600V 1

SIGC101T170R3E IGBT3 Power Chip Features: This chip is used for: 1700V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy parallelingG E Chip Type VCE IC Die Size PackageSIGC101T170R3E 1700V 75A 10.03 x 10.03 mm2 sawn on foil Mechanical Parameters

IXFC 14N60P VDSS = 600 VPolarHVTM HiPerFETID25 = 8 APower MOSFET RDS(on) 630 m ISOPLUS220TMtrr 200 ns(Electrically Isolated Back Surface)N-Channel Enhancement ModeFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS220TM (IXFC)E153432VDSS TJ = 25 C to 150 C 600 VVDGR TJ

IXFC 16N50P VDSS = 500 VPolarHVTM HiPerFETID25 = 10 APower MOSFET RDS(on) 450 m ISOPLUS220TMtrr 200 ns(Electrically Isolated Back Surface)N-Channel Enhancement ModeFast Intrinsic DiodeAvalanche RatedISOPLUS220TM (IXFC)Symbol Test Conditions Maximum RatingsE153432VDSS TJ = 25 C to 150 C 500 VVDGR T

Trench Gate VDSS = 250VIXTC110N25TPower MOSFET ID25 = 50A RDS(on) 27m (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedISOPLUS220 (IXTC)Symbol Test Conditions Maximum Ratings E153432VDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C, RGS = 1M 250 VVGSS Continuous 20 VGVGSM Transient 30 VD

IXFC 110N10P VDSS = 100 VPolarHVTM HiPerFETID25 = 60 APower MOSFET RDS(on) 17 m ISOPLUS220TMtrr 150 ns(Electrically Isolated Back Surface)N-Channel Enhancement ModeFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC)E153432VDSS TJ = 25 C to 175 C 100 VVDGR TJ

IXGC 16N60C2HiPerFASTTM IGBTVCES = 600 VIXGC 16N60C2D1C2-Class High SpeedIC25 = 20 AIGBT in ISOPLUS220TM CaseVCE(sat) = 3.0 VElectrically Isolated Back Surfacetfi(typ) = 35 nsPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings ISOPLUS 220TM (IXGC) E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 V

GenX3TM 600V IGBTs VCES = 600V IXGA30N60C3C1 w/ SiC Anti-Parallel IC110 = 30A IXGP30N60C3C1 Diode VCE(sat) 3.0V IXGH30N60C3C1 tfi(typ) = 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TC = 25C to 150C 600 V VCGR TJ = 25C to 150C, RG

IXGC 16N60C2HiPerFASTTM IGBTVCES = 600 VIXGC 16N60C2D1C2-Class High SpeedIC25 = 20 AIGBT in ISOPLUS220TM CaseVCE(sat) = 3.0 VElectrically Isolated Back Surfacetfi(typ) = 35 nsPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings ISOPLUS 220TM (IXGC) E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 V

Preliminary Technical InformationGenX3TM 600V IGBT VCES = 600VIXGH36N60B3C1w/ SiC Anti-Parallel IC110 = 36ADiode VCE(sat) 1.8Vtfi(typ) = 100nsMedium Speed Low Vsat PTIGBT for 5 - 40kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VG (TAB)VCGR TJ = 25C to 150C, RGE = 1M 600 V CEVGES Continuous 20

HiperFASTTM IGBT VCES = 600VIXGR60N60C2C1w/ SiC Anti-Parallel IC110 = 39ADiode VCE(sat) 2.7Vtfi(typ) = 54ns(Electrically Isolated Back Surface)ISOPLUS 247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 VCISOLATED TABEIC25 TC = 25

ADVANCED TECHNICAL INFORMATIONTrench Power MOSFET IXUC160N075 VDSS = 75 VISOPLUS220TM ID25 = 160 AElectrically Isolated Back Surface RDS(on)= 6.5 mISOPLUS 220TMSymbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C75 VDSIsolated back surface*VGS Continuous 20 VID25 TC = 25C; Note 1 160 A G = Gate, D = Drain,S = SourceID90 TC = 90

GenX3TM 600V IGBTs VCES = 600V IXGA30N60C3C1 w/ SiC Anti-Parallel IC110 = 30A IXGP30N60C3C1 Diode VCE(sat) 3.0V IXGH30N60C3C1 tfi(typ) = 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TC = 25C to 150C 600 V VCGR TJ = 25C to 150C, RG

IXGC 16N60B2HiPerFASTTM IGBTVCES = 600 VIXGC 16N60B2D1B2-Class High SpeedIC25 = 28 AIGBT in ISOPLUS220TM CaseVCE(sat) = 2.3 VElectrically Isolated Back Surfacetfi(typ) = 80 nsPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings ISOPLUS 220TM (IXGC) E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 V

GenX3TM 600V IGBTs VCES = 600V IXGA30N60C3C1 w/ SiC Anti-Parallel IC110 = 30A IXGP30N60C3C1 Diode VCE(sat) 3.0V IXGH30N60C3C1 tfi(typ) = 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TC = 25C to 150C 600 V VCGR TJ = 25C to 150C, RG

IXGC 16N60B2HiPerFASTTM IGBTVCES = 600 VIXGC 16N60B2D1B2-Class High SpeedIC25 = 28 AIGBT in ISOPLUS220TM CaseVCE(sat) = 2.3 VElectrically Isolated Back Surfacetfi(typ) = 80 nsPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings ISOPLUS 220TM (IXGC) E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 V

Preliminary Technical InformationGenX3TM 600V IGBT VCES = 600VIXGH48N60B3C1w/ SiC Anti-Parallel IC110 = 48ADiode VCE(sat) 1.8Vtfi(typ) = 116nsMedium Speed Low Vsat PTIGBT 5 - 40 kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 V ( TAB )CEVGES Continuous 20

GenX3TM 600V IGBT VCES = 600VIXGR60N60C3C1w/ SiC Anti-Parallel IC110 = 30ADiode VCE(sat) 2.5Vtfi(typ) = 50ns(Electrically Isolated Back Surface)High Speed PT IGBT for 40-100kHz SwitchingISOPLUS247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 VC Isolated T

Preliminary Technical InformationIXTC160N10T VDSS = 100 VTrenchMVTMID25 = 83 APower MOSFET RDS(on) 7.5 m (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum Ratings ISOPLUS220 (IXTC)E153432VDSS TJ = 25C to 175C 100 VVDGR TJ = 25C to 175C; RGS = 1 M 100 VVGSM Transient

ADVANCE TECHNICAL INFORMATIONTrench Power MOSFET IXUC100N055 VDSS = 55 VISOPLUS220TM ID25 = 100 AElectrically Isolated Back Surface RDS(on)= 7.7 mISOPLUS 220TMSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C55 VGDVGS Continuous 20 VSIsolated back surface*ID25 TC = 25C; Note 1 100 AG = Gate, D = Drain,ID90 TC = 90C, Note 1 8

Preliminary Technical InformationGenX3TM 600V IGBT VCES = 600VIXGH48N60C3C1w/ SiC Anti-Parallel IC110 = 48ADiode VCE(sat) 2.5Vtfi(typ) = 38nsHigh Speed PT IGBT for40 - 100kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGCVGES Continuous 20 V E ( TAB )VGEM

DTC143TEFeaturesFeaturesFeatures Built-In Bias Resistors Enable the Configuration of an InverterCircuit Without Connecting External Input Resistors The Bias Resistors Consist of Thin-Film Resistors With CompleteNPNIsolation to Allow Negative Biasing of the Input. They Also HaveDigital Transistorthe Advantage of Almost Completely Eliminating Parasitic Effects Only

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsDTC113ZCACA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epitaxial Planar Die Construction Complementary NPN Types Available Digital Transistors Built-In Bi

MSJAC11N65YElectrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 650 VIGSS VDS=0V, VGS =30VGate-Source Leakage Current 100 nAVDS=650V, VGS=0V1IDSSZero Gate Voltage Drain Current AVDS=650V, VGS=0V, TJ=150C100VGS(th) VDS=

MCCMicro Commercial Components 2SC1740S-QTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 2SC1740S-RPhone: (818) 701-49332SC1740S-SFax: (818) 701-4939Features Lead Free Finish/Rohs Compliant ("P"Suffix designates NPNCompliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulate Moisture Sensitivity

2SC1008-RMCC2SC1008-OMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC1008-YCA 91311Phone: (818) 701-49332SC1008-GFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN SiliconRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingEpitaxial Transistor

2SC1959-OMCCMicro Commercial ComponentsTM2SC1959-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933 2SC1959-GRFax: (818) 701-4939Features Audio frequency low power amplifier applications, driver stage Power Siliconamplifier applications, switching applications Excellent hFE Linearity: hFE(2) =25(Min.) : VCE=6.0V, IC=400mA

MCCMicro Commercial ComponentsTMDTC144TE20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN Digital Transistor Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Built-in

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933DTC114YEFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Built-in bias resistors enable the

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311DTC143XCAPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epitaxial Planar Die Construction Complementary NPN Types Available Digital Transistors Built-In B

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933DTC124EEFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Built-in bias resistors enable the

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933DTC144EEFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Built-in bias resistors enable the

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthDTC114TUAMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 NPN Digital Transistor Built-in

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsDTC114TECA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1NPN Digital Transistor Built-in

MCAC16N03Features Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"N-CHANNEL Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)MOSFETMaximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperature Range:

MCAC10H03Electrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 30 VIGSS VDS=0V, VGS =20VGate-Source Leakage Current 100 nAIDSS VDS=30V, VGS=0VZero Gate Voltage Drain Current 1 AVGS(th) VDS=VGS, ID=250A1.2 1.7 2.5 VGate-Thresh

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933DTC124EUAFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Built-in bias resistors enable th

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthDTC123JUAMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Epitaxial Planar Die Construction Complementary NPN Types AvailableDigital Transistors Built-in Bias Resistors Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 DTC143ECAPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Digital Transistors Epitaxial Planar Die Construction Complementary PNP Types Available Built-In Bia

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933DTC144EUAFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Built-in bias resistors enable th

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933DTC114YUAFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Built-in bias resistors enable th

MCCTMMicro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsDTC113ZUACA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epitaxial Planar Die Construction Complementary NPN Types Available Digital Transistors Built-In B

2SC1623Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingNPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Epitaxial TransistorsMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +15

2SC1623-L5MCCMicro Commercial ComponentsTM2SC1623-L620736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC1623-L7Phone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN SiliconRoHS Compliant. See ordering information) High DC Cu

MCCTMMicro Commercial ComponentsDTC144TUA20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN Digital Transistor Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Built-i

2SC1815-OMCC2SC1815-YMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC1815-GRCA 91311Phone: (818) 701-49332SC1815-BLFax: (818) 701-4939Features 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF NPN SiliconAmplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation.Epitaxial

NPN Epitaxial SiliconTransistorKSC1845Features Audio Frequency Low-Noise Amplifierwww.onsemi.com Complement to KSA992 This is a Pb-Free DeviceMAXIMUM RATINGS (Values are at TA = 25C unless otherwise noted.)Symbol Parameter Value UnitVCBO Collector-Base Voltage 120 V1. Emitter2. CollectorVCEO Collector-Emitter Voltage 120 V3. Base1VEBO Emitter-Base Volt

MUN2216, MMUN2216L,MUN5216, DTC143TE,DTC143TM3, NSBC143TF3Digital Transistors (BRT)R1 = 4.7 kW, R2 = 8 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

MUN5333DW1,NSBC143ZPDXV6,NSBC143ZPDP6Complementary BiasResistor Transistorswww.onsemi.comR1 = 4.7 kW, R2 = 47 kWPIN CONNECTIONSNPN and PNP Transistors with MonolithicBias Resistor Network (3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single tr

MUN5335DW1,NSBC123JPDXV6,NSBC123JPDP6Complementary BiasResistor TransistorsR1 = 2.2 kW, R2 = 47 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a singl

MUN5335DW1,NSBC123JPDXV6,NSBC123JPDP6Complementary BiasResistor TransistorsR1 = 2.2 kW, R2 = 47 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a singl

MUN2240, MMUN2240L,MUN5240, DTC144TE,DTC144TM3, NSBC144TF3Digital Transistors (BRT)R1 = 47 kW, R2 = 8 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (B

MUN5333DW1,NSBC143ZPDXV6,NSBC143ZPDP6Complementary BiasResistor Transistorswww.onsemi.comR1 = 4.7 kW, R2 = 47 kWPIN CONNECTIONSNPN and PNP Transistors with MonolithicBias Resistor Network (3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single tr

MUN5233DW1,NSBC143ZDXV6,NSBC143ZDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 4.7 kW, R2 = 47 kWPIN CONNECTIONSNPN Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor wi