C1 Transistor. Datasheet pdf. Equivalent

Type Designator: C1

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.825 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 150

Noise Figure, dB: -

Package: TO92

C1 Transistor Equivalent Substitute - Cross-Reference Search

C1 Datasheet (PDF)

1.1. c1815.pdf Size:95K _update

SUNROC SOT-23 C1815 TRANSISTOR (NPN) FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200

1.2. nsbc114tpdxv6.pdf Size:119K _update

MUN5315DW1, NSBC114TPDXV6 Complementary Bias Resistor Transistors R1 = 10 kW, R2 = 8 kW http://onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monol

1.3. tsc10ct.pdf Size:201K _update

Preliminary TSC10 High Voltage NPN Transistor TO-92 Pin Definition: PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 500V 3. Base BVCBO 980V IC 1.5A VCE(SAT) 0.5V @ IC / IB = 0.5A / 0.1A Features Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor Ordering Information Part No. Package Pa

1.4. nsbc114ydxv6.pdf Size:90K _update

MUN5214DW1, NSBC114YDXV6, NSBC114YDP6 Dual NPN Bias Resistor Transistors http://onsemi.com R1 = 10 kW, R2 = 47 kW NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor wit

1.5. sdtc114eet1g.pdf Size:144K _update

DTC114EET1 Series, SDTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http://onsemi.com device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two r

1.6. 2sc1507-to220f.pdf Size:191K _update

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1507 DESCRIPTION ·With TO-220F package ·High collector-emitter voltage : VCEO=300V ·High frequency:fT=40MHz(Min) APPLICATIONS ·For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.

1.7. 2sc1815lt1.pdf Size:122K _update

2SC1815LT1 NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 * Complement to 2SA1015 * Collector Current :Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo 60 V Collector-Emitter Voltage Vceo 50 V Emitter-Base Voltage Vebo 5 V PIN: 1 2 3 Collector Current Ic 150 mA STYLE Collector Dissipation Ta=25℃* PD 225 mW NO

1.8. 2sc1766gp.pdf Size:128K _update

CHENMKO ENTERPRISE CO.,LTD 2SC1766GP SMALL FLAT NPN Epitaxial Transistor VOLTAGE 50 Volts CURRENT 2 Ampere APPLICATION * Power amplifier . FEATURE * Small flat package. (SC-62/SOT-89) SC-62/SOT-89 * Low saturation voltage VCE(sat)=-0.5V(max.)(I =-1A) * High speed switching time: tstg= 1.0uSec (typ.) C * PC= 1.0 to 2.0W (mounted on ceramic substrate). 4.6MAX. 1.6MAX. * High sat

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1.10. tsc124ennd03.pdf Size:165K _update

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O WBFBP-03B (1.2×1.2×0.5) TSC124ENND03 TRANSISTOR TOP unit: mm DESCRIPTION I G NPN Digital Transistor O 1. IN FEATURES 2. GND 1) Built-in bias resistors enable the configuration of an inverter circuit BACK 3. OUT without connecting external input resistors

1.11. 2sc1740s-q-r-s.pdf Size:323K _update

MCC Micro Commercial Components 2SC1740S-Q TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC1740S-R Phone: (818) 701-4933 2SC1740S-S Fax: (818) 701-4939 Features • Lead Free Finish/Rohs Compliant ("P"Suffix designates NPN Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating Plastic-Encapsulate • Moisture Sensitivity

1.12. tsc114tnnd03.pdf Size:292K _update

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TSC114TNND03 TRANSISTOR (1.2×1.2×0.5) TOP unit: mm DESCRIPTION B E NPN Digital Transistor C 1. BASE FEATURES 2. EMITTER 1) Built-in bias resistors enable the configuration of an inverter circuit BACK without connecting external input resistors (see

1.13. tsc143ennd03.pdf Size:428K _update

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O WBFBP-03B TSC143ENND03 TRANSISTOR (1.2×1.2×0.5) TOP unit: mm DESCRIPTION I G NPN Digital Transistor O 1. IN FEATURES 2. GND 1) Built-in bias resistors enable the configuration of an inverter circuit BACK 3. OUT without connecting external input resistors (se

1.14. tsc1417.pdf Size:112K _update

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 TSC1417 TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR General Purpose Switching and Amplification. 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-B

1.15. tsc114ynnd03.pdf Size:304K _update

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O WBFBP-03B (1.2×1.2×0.5) TSC114YNND03 TRANSISTOR TOP unit: mm DESCRIPTION I G NPN Digital Transistor O 1. IN FEATURES 2. GND 1) Built-in bias resistors enable the configuration of an BACK 3. OUT without connecting external input

1.16. 2sc1846_3da1846.pdf Size:853K _update

2SC1846(3DA1846) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于中功率放大。 Purpose: Medium power amplifier. 特点:V 低,与 2SA885(3CA885)互补可得到 3W 输出。 CE(sat) Features: Low V ,3W output in complementary pair with 2SA885(3CA885). CE(sat) 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号数值单位 Symbol Rating Unit V 45 V

1.17. 2sc1384_3da1384.pdf Size:193K _update

2SC1384(3DA1384) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于音频功率放大和驱动。 Purpose: AF power amplifier and driver applications. 特点:饱和压降低,与 2SA684(3CA684)互补可得 2～3 瓦输出。 Features: Low V ,2～3W output in complementary pair with 2SA684(3CA684). CE(sat) 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号数�

1.18. pdtc144v.pdf Size:139K _update

PDTC144V series NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ Rev. 04 — 16 November 2009 Product data sheet 1. Product profile 1.1 General description NPN resistor-equipped transistors. Table 1. Product overview Type number Package PNP complement NXP JEITA PDTC144VE SOT416 SC-75 PDTA144VE PDTC144VK SOT346 SC-59A PDTA144VK PDTC144VM SOT883 SC-101 PDTA144VM PDTC144VS[1

1.19. 2sc1008-g-o-y-r.pdf Size:430K _update

2SC1008-R MCC 2SC1008-O Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SC1008-Y CA 91311 Phone: (818) 701-4933 2SC1008-G Fax: (818) 701-4939 Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN Silicon RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating Epitaxial Transistor �

1.20. krc157f_krc158f_krc159f.pdf Size:337K _update

SEMICONDUCTOR KRC157F~KRC159F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES E With Built-in Bias Resistors. B Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. Thin Fine Pitch Small Package. DIM MILLIMETERS 2 _ A 0.6 + 0.05 3 _ + B 0.8 0.05 C 0.38+0.02/-0.04 1 _

1.21. tsc144ennd03.pdf Size:274K _update

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O TSC144ENND03 TRANSISTOR WBFBP-03B (1.2×1.2×0.5) TOP unit: mm DESCRIPTION NPN Digital Transistor I G O FEATURES 1. IN 1) Built-in bias resistors enable the configuration of an inverter circuit 2. GND without connecting external input resistors (see equivalent ci

1.22. 2sc1573-a_3da1573-a.pdf Size:198K _update

2SC1573(3DA1573) 2SC1573A(3DA1573A) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于普通放大及小屏幕电视机视放电路。 Purpose: General amplifier and video frequency output in small screen TV. 特点:耐压高,f 高,与 2SA879(3CA879)互补。 T Features: High V , high f ; Complementary pair with 2SA879(3CA879). CEO T 极限参数/Absolute maximum rati

1.23. ktc143zka.pdf Size:190K _update

SMD Type Transistors Product specification KTC143ZKA SOT-23 Unit: mm ■ Features +0.1 2.9-0.1 +0.1 0.4-0.1 ● NPN digital transistor (Built-in resistor types) 3 ● Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 ●　Only the on/off conditions need to be set for +0.1 1.9-0

1.24. krc151f_krc152f_krc153f_krc154f.pdf Size:391K _update

SEMICONDUCTOR KRC151F~KRC154F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES E ·With Built-in Bias Resistors. B ·Simplify Circuit Design. ·Reduce a Quantity of Parts and Manufacturing Process. ·Thin Fine Pitch Small Package. DIM MILLIMETERS 2 _ A 0.6 + 0.05 3 _ + B 0.8 0.05 C 0.38+0.02/-0.0

1.25. pdtc123y.pdf Size:137K _update

PDTC123Y series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 04 — 16 November 2009 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTC123YE SOT416 SC-75 - PDTA123YE PDTC123YK SOT346 SC-59A TO-236 PDTA123YK PDTC123YM SOT883

1.26. 2sc1819m.pdf Size:84K _update

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1819M DESCRIPTION ·With TO-220 package ·High VCEO ·Large PC APPLICATIONS ·For use in line-operated color TV chroma output circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emitter Absolute maximum ratings (Ta

1.27. tsc136cz.pdf Size:455K _update

TSC136 High Voltage NPN Transistor TO-220 PRODUCT SUMMARY Pin Definition: 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 3A VCE(SAT) 2V @ IC / IB = 2A / 0.5A Block Diagram Features ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor Ordering Information Part No. Package Packing TSC136CZ

1.28. nsbc114ydp6.pdf Size:90K _update

1.29. tsc143tnnd03.pdf Size:390K _update

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TSC143TNND03 TRANSISTOR (1.2×1.2×0.5) TOP unit: mm DESCRIPTION B E NPN Digital Transistor C 1. BASE FEATURES 2. EMITTER 1) Built-in bias resistors enable the configuration of an inverter circuit BACK 3. COLLECTOR without connecting external input

1.30. sdtc124eet1g.pdf Size:155K _update

MUN2212, MMUN2212L, MUN5212, DTC124EE, DTC124EM3, NSBC124EF3 Digital Transistors (BRT) R1 = 22 kW, R2 = 22 kW http://onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (

1.31. sdtc144eet1g.pdf Size:116K _update

MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3 Digital Transistors (BRT) R1 = 47 kW, R2 = 47 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT

1.32. tsc123jnnd03.pdf Size:343K _update

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O WBFBP-03B TSC123JNND03 TRANSISTOR (1.2×1.2×0.5) TOP unit: mm DESCRIPTION I G NPN Digital Transistor O 1. IN FEATURES 2. GND 1) Built-in bias resistors enable the configuration of an inverter circuit BACK without connecting external input resistors (see equiv

1.33. sdtc124eet1.pdf Size:144K _update

1.34. 2sc1815-bl-gr-o-y.pdf Size:368K _update

2SC1815-O MCC 2SC1815-Y Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SC1815-GR CA 91311 Phone: (818) 701-4933 2SC1815-BL Fax: (818) 701-4939 Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF NPN Silicon Amplifier and General Purpose Applications. • Capable of 0.4Watts of Power Dissipation. Epitaxial

1.35. sdtc114yet1g.pdf Size:144K _update

1.36. pdtc124x.pdf Size:138K _update

PDTC124X series NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ Rev. 07 — 16 November 2009 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTC124XE SOT416 SC-75 - PDTA124XE PDTC124XEF SOT490 SC-89 - PDTA124XEF PDTC124XK SOT346 SC-59

1.37. tsc128dc.pdf Size:204K _update

TSC128D High Voltage NPN Transistor with Diode Pin Definition: TO-220 TO-263 PRODUCT SUMMARY 1. Base (D2PAK) BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 4A VCE(SAT) 1.5V @ IC / IB = 4A / 1A Features Block Diagram ● Build-in Free-wheeling Diode Makes Efficient Anti- saturation Operation ● No Need to Interest an hfe Value Because of Low Variable Stora

1.38. 2sc1740s.pdf Size:209K _update

SUNROC 2SC1740S TRANSISTOR (NPN) TO-92S FEATURES 1. EMITTER Low Cob 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units 3. BASE VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V 1 2 3 VEBO Emitter-Base Voltage 7 V IC Collector Current –Continuous 150 mA PC Collector Power Dissipation 300 mW TJ Junction

1.39. 2sc1402.pdf Size:102K _update

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1402 DESCRIPTION ·With TO-3 package ·Wide area of safe operation APPLICATIONS ·For audio frequency power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDI

1.40. tsc1203ecm.pdf Size:168K _update

TSC1203E High Voltage NPN Transistor TO-263 Pin Definition: PRODUCT SUMMARY (D2PAK) 1. Base BVCBO 1050V 2. Collector 3. Emitter BVCEO 550V IC 5A VCE(SAT) 0.5V @ IC=1A, IB=200mA Features Ordering Information ● High Voltage Capability Part No. Package Packing ● High switching speed TSC1203ECM RNG TO-263 800pcs / 13” Reel Note: “G” denote for Halogen Fr

1.41. 2sc1959-gr-o-y.pdf Size:266K _update

2SC1959-O MCC Micro Commercial Components TM 2SC1959-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 2SC1959-GR Fax: (818) 701-4939 Features • Audio frequency low power amplifier applications, driver stage Power Silicon amplifier applications, switching applications • Excellent hFE Linearity: hFE(2) =25(Min.) : VCE=6.0V, IC=400mA

1.42. 2sc1383_3da1383.pdf Size:227K _update

2SC1383(3DA1383) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于音频功率放大和激励。/Purpose: Audio frequency power amplifier and driver. 特点:饱和电压低,可与 2SA683(3CA683)互补。/Features: Low V ,complementary pair CE(sat) with 2SA683(3CA683). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号数值单位 Symbol Rating Unit V 30

1.43. 2sc1623-l5-l6-l7.pdf Size:326K _update

2SC1623-L5 MCC Micro Commercial Components TM 2SC1623-L6 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC1623-L7 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Halogen free available upon request by adding suffix "-HF" • Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN Silicon RoHS Compliant. See ordering information) • High DC Cu

1.44. tsc114ennd03.pdf Size:268K _update

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O TSC114ENND03 TRANSISTOR WBFBP-03B (1.2×1.2×0.5) TOP unit: mm DESCRIPTION NPN Digital Transistor I G O FEATURES 1. IN 1) Built-in bias resistors enable the configuration of an inverter circuit 2. GND without connecting external input resistors (see equivalent ci

1.45. nsbc114yf3.pdf Size:156K _update

MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3 Digital Transistors (BRT) R1 = 10 kW, R2 = 47 kW http://onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (

1.46. tsc148d.pdf Size:204K _update

TSC148D High Voltage Fast-Switching NPN Power Transistor TO-220 ITO-220 TO-263 Pin Definition: PRODUCT SUMMARY (D2PAK) 1. Base 400V BVCEO 2. Collector 3. Emitter 700V BVCBO 8A IC 1.5V @ IC / IB = 5A / 1A VCE(SAT) Features Block Diagram ● Build-in Free-wheeling Diode Makes Efficient Anti- saturation Operation ● No Need to Interest an hfe Value Becaus

1.47. 2sc1741s.pdf Size:110K _update

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S 2SC1741S TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR High IC 3. BASE Low VCE(sat). Optimal for Low Voltage Operation Complements the 2SA854S MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Col

1.48. ttc13003l.pdf Size:175K _update

TTC13003L Bipolar Transistors Silicon NPN Triple-Diffused Type TTC13003L TTC13003L TTC13003L TTC13003L 1. Applications 1. Applications 1. Applications 1. Applications • High-Speed Switching for Inverter Lighting Equipment 2. Features 2. Features 2. Features 2. Features (1) Suitable for RCC circuits.(guaranteed small current hFE) :hFE = 10(min)(IC = 1 mA) (2) High speed: tf =

1.49. 2sc1360-a_3da1360-a.pdf Size:198K _update

2SC1360(3DA1360) 2SC1360A(3DA1360A) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于图像中频放大。 Purpose: Picture IF amplifier . 特点:特征频率高,集电极耗散功率大。 Features: High f , large P . T C 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号数值单位 Symbol Rating Unit 2SC1360 50 V CBO V 2SC1360A 60 2SC1360

1.50. pdtc143et_4.pdf Size:56K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC143ET NPN resistor-equipped transistor 1999 Apr 15 Product specification Supersedes data of 1998 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143ET FEATURES � Built-in bias resistors R1 and R2 (typ. 4.7 k? each) 3 handbook, 4 columns � Simplification of circuit design 3 � Red

1.51. pdtc143es_2.pdf Size:58K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PDTC143ES NPN resistor-equipped transistor 1998 May 20 Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143ES FEATURES � Built-in bias resistors R1 and R2 (typ. 4.7 k? each) � Simplification of circui

1.52. pdtc143zk_3.pdf Size:55K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTC143ZK NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143ZK FEATURES � Built-in bias resistors R1 and R2 (typ. 4.7 and 47 k? respectively) � Simplification of circuit design 3 3 � Reduces n

1.53. pdtc124eu_3.pdf Size:58K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC124EU NPN resistor-equipped transistor 1999 Apr 16 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124EU FEATURES � Built-in bias resistors R1 and R2 (typ. 22 k? each) 3 handbook, 4 columns � Simplification of circuit design 3 � Redu

1.54. pdtc143xt_1.pdf Size:56K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC143XT NPN resistor-equipped transistor 1999 Apr 20 Product specification Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143XT FEATURES � Built-in bias resistors R1 and R2 (typ. 4.7 k? and 10 k? 3 handbook, 4 columns respectively) 3 � Simplification of circuit design R1 1 � Reduces n

1.55. pdtc143ek_2.pdf Size:57K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTC143EK NPN resistor-equipped transistor 1998 May 18 Product specification Supersedes data of 1997 Jun 16 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143EK FEATURES � Built-in bias resistors R1 and R2 (typ. 4.7 k? each) 3 � Simplification of cir

1.56. pdtc114tu_3.pdf Size:53K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC114TU NPN resistor-equipped transistor 1999 Apr 16 Preliminary specification Supersedes data of 1998 May 19 Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC114TU FEATURES � Built-in bias resistor R1 (typ. 10 k?) 3 handbook, 4 columns � Simplification of circuit design 3 � Reduces nu

1.57. pdtc124ek_3.pdf Size:57K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTC124EK NPN resistor-equipped transistor 1998 May 08 Product specification Supersedes data of 1997 Sep 08 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124EK FEATURES � Built-in bias resistors R1 and R2 (typ. 22 k? each) 3 � Simplification of circ

1.58. bc182_bc183_bc184.pdf Size:111K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC182/D Amplifier Transistors BC182,A,B NPN Silicon BC183 BC184 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 BC BC BC 182 183 184 Rating Symbol Unit CASE 29�04, STYLE 17 TO�92 (TO�226AA) Collector�Emitter Voltage VCEO 50 30 30 Vdc Collector�Base Voltage VCBO 60 45 45 Vdc Emitter�Base Voltage VEBO 6.0 Vdc

1.59. c122rev0.pdf Size:65K _motorola

MOTOROLA SEMICONDUCTOR TECHNICAL DATA C122( )1 Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors Series . . . designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. SCRs � Glass Passivated Junctions and Center Gate Fire for Greater P

1.60. pdtc114ee_4.pdf Size:56K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114EE NPN resistor-equipped transistor 1999 May 18 Product specification Supersedes data of 1998 Nov 26 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EE FEATURES PINNING � Built-in bias resistors R1 and R2 (typ. 10 k? each) PIN DESCRIPTION � Simplification of circuit design 1 base/input � Reduces n

1.61. pdtc114yu_1.pdf Size:59K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC114YU NPN resistor-equipped transistor 1999 Apr 20 Product specification Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YU FEATURES � Built-in bias resistors R1 and R2 (typ. 10 k? and 47 k? respectively) 3 handbook, 4 columns 3 � Simplification of circuit design R1 � Reduces number

1.62. pdtc144et_5.pdf Size:56K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC144ET NPN resistor-equipped transistor 1999 Apr 16 Product specification Supersedes data of 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC144ET FEATURES � Built-in bias resistors R1 and R2 (typ. 47 k? each) 3 handbook, 4 columns � Simplification of circuit design 3 � Redu

1.63. pdtc143tt_2.pdf Size:51K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTC143TT NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 May 29 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143TT FEATURES PINNING � Built-in bias resistor R1 (typ. 4.7 k?) PIN DESCRIPTION � Simplification of circuit design 1 base/input � Reduce

1.64. pdtc143xe_2.pdf Size:55K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC143XE NPN resistor-equipped transistor Product specification 1999 May 21 Supersedes data of 1998 May 29 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143XE FEATURES � Built-in bias resistors R1 and R2 (typ. 4.7 k? and 10 k? respectively) � Simplification of circuit design handbook, halfpage 3 3 � Red

1.65. pdtc123je_3.pdf Size:55K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 Aug 03 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JE FEATURES � Built-in bias resistors R1 and R2 (typ. 2.2 and 47 k? respectively) � Simplification of circuit design handbook, halfpage 3 3 � Reduc

1.66. pdtc144es_2.pdf Size:58K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PDTC144ES NPN resistor-equipped transistor 1998 May 19 Product specification Supersedes data of 1997 Jul 01 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC144ES FEATURES � Built-in bias resistors R1 and R2 (typ. 47 k? each) � Simplification of circuit

1.67. dtc114yerev1.pdf Size:144K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by DTC114YE/D DTC114YE Preliminary Data Sheet Bias Resistor Transistor NPN Silicon Surface Mount Transistor with 3 Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a 2 1 monolithic bias network consisting of two resistors; a series base resistor and a base�emitter resistor.

1.68. dtc114terev0.pdf Size:91K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by DTC114TE/D DTC114TE Preliminary Data Sheet Bias Resistor Transistor NPN Silicon Surface Mount Transistor with 3 Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a 2 1 monolithic bias network consisting of two resistors; a series base resistor and a base�emitter resistor.

1.69. pdtc124xef_2.pdf Size:54K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC124XEF NPN resistor-equipped transistor 1999 May 18 Preliminary specification Supersedes data of 1998 Nov 11 Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC124XEF FEATURES � Power dissipation comparable to SOT23 � Built-in bias resistors R1 and R2 (typ. 22 k? and 47 k? respectively) 3 handbook, hal

1.70. bc161-16rev0d.pdf Size:199K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC161�16/D Amplifier Transistors PNP Silicon BC161-16 COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 3 2 1 Rating Symbol Value Unit CASE 79�04, STYLE 1 Collector�Emitter Voltage VCEO �60 Vdc TO�39 (TO�205AD) Collector�Base Voltage VCBO �60 Vdc Emitter�Base Voltage VEBO �5.0 Vdc Collector Current � Continuous IC �1.0

1.71. pdtc114eu_4.pdf Size:58K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC114EU NPN resistor-equipped transistor 1999 Apr 16 Product specification Supersedes data of 1998 Nov 26 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EU FEATURES � Built-in bias resistors R1 and R2 (typ. 10 k? each) 3 handbook, 4 columns � Simplification of circuit design 3 � Redu

1.72. pdtc114te_2.pdf Size:51K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114TE NPN resistor-equipped transistor 1998 Aug 03 Product specification Supersedes data of 1997 Jul 11 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114TE FEATURES � Built-in bias resistor R1 (typ. 10 k?) � Simplification of circuit design � Reduces number of c

1.73. pdtc124es_2.pdf Size:58K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PDTC124ES NPN resistor-equipped transistor 1998 May 08 Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124ES FEATURES � Built-in bias resistors R1 and R2 (typ. 22 k? each) � Simplification of circuit

1.74. pdtc114tt_3.pdf Size:51K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTC114TT NPN resistor-equipped transistor 1999 Apr 16 Objective specification Supersedes data of 1998 May 19 Philips Semiconductors Objective specification NPN resistor-equipped transistor PDTC114TT FEATURES � Built-in bias resistor R1 (typ. 10 k?) � Simplification of circuit design 3 handbook, 4 columns � Reduces number of

1.75. c106rev0.pdf Size:98K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by C106/D C106 Silicon Controlled Rectifier * Series Reverse Blocking Triode Thyristors *Motorola preferred devices . . . Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is importa

1.76. pdtc114ye_3.pdf Size:56K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114YE NPN resistor-equipped transistor 1999 May 18 Product specification Supersedes data of 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YE FEATURES PINNING � Built-in bias resistors R1 and R2 (typ. 10 k? and 47 k? PIN DESCRIPTION respectively) 1 base/input � Simplification of circuit

1.77. pdtc123jef_1.pdf Size:54K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC123JEF NPN resistor-equipped transistor 1999 May 27 Preliminary specification Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC123JEF FEATURES � Built-in bias resistors R1 and R2 (typ. 2.2 k? and 47 k? respectively) 3 handbook, halfpage 3 � Simplification of circuit design R1 1 � Reduces number o

1.78. dtc114te _94_sot416.pdf Size:61K _motorola

1.79. pdtc143eu_3.pdf Size:58K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC143EU NPN resistor-equipped transistor 1999 Apr 14 Product specification Supersedes data of 1998 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143EU FEATURES � Built-in bias resistors R1 and R2 typ. 4.7 k? each) 3 handbook, 4 columns � Simplification of circuit design 3 � Redu

1.80. pdtc123et_3.pdf Size:55K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123ET NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123ET FEATURES � Built-in bias resistors R1 and R2 (typ. 2.2 k? each) � Simplification of circuit design � Reduces number of components an

1.81. pdtc114ek_3.pdf Size:57K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTC114EK NPN resistor-equipped transistor 1998 Nov 26 Product specification Supersedes data of 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EK FEATURES � Built-in bias resistors R1 and R2 (typ. 10 k? each) 3 � Simplification of circuit design 3 � Reduces number of compone

1.82. pdtc114ts_2.pdf Size:53K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PDTC114TS NPN resistor-equipped transistor 1998 May 18 Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114TS FEATURES � Built-in bias resistor R1 (typ. 10 k?) � Simplification of circuit design � Red

1.83. pdtc143zt_3.pdf Size:56K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC143ZT NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143ZT FEATURES PINNING � Built-in bias resistors R1 and R2 (typ. 4.7 k? and 47 k? PIN DESCRIPTION respectively) 1 base/input � Simplific

1.84. pdtc114tk_2.pdf Size:52K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTC114TK NPN resistor-equipped transistor 1998 May 19 Product specification Supersedes data of 1997 May 28 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114TK FEATURES � Built-in bias resistor R1 (typ. 10 k?) � Simplification of circuit design 3 ha

1.85. pdtc144ee_2.pdf Size:56K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC144EE NPN resistor-equipped transistor 1998 Jul 16 Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC144EE FEATURES � Built-in bias resistors R1 and R2 (typ. 47 k? each) � Simplification of circuit design handboo

1.86. pdtc144eef_1.pdf Size:54K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC144EEF NPN resistor-equipped transistor 1999 May 27 Preliminary specification Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC144EEF FEATURES � Built-in bias resistors R1 and R2 (typ. 47 k? each) � Simplification of circuit design 3 handbook, halfpage 3 R1 � Reduces number of components 1 and boa

1.87. pdtc114eef_2.pdf Size:55K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC114EEF NPN resistor-equipped transistor 1999 May 31 Product specification Supersedes data of 1998 Nov 11 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EEF FEATURES � Power dissipation comparable to SOT23 � Built-in bias resistors R1 and R2 3 handbook, halfpage (typ. 10 k? each) 3 R1 � Simplifica

1.88. dtc114ye_69_ sot416.pdf Size:94K _motorola

1.89. pdtc124et_5.pdf Size:56K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTC124ET NPN resistor-equipped transistor 1999 Apr 16 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124ET FEATURES � Built-in bias resistors R1 and R2 (typ. 22 k? each) 3 handbook, 4 columns � Simplification of circuit design 3 � Reduc

1.90. pdtc144eu_3.pdf Size:58K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC144EU NPN resistor-equipped transistor 1999 Apr 16 Objective specification Supersedes data of 1998 May 18 Philips Semiconductors Objective specification NPN resistor-equipped transistor PDTC144EU FEATURES � Built-in bias resistors R1 and R2 (typ. 47 k? each) 3 handbook, 4 columns � Simplification of circuit design 3 R1

1.91. pdtc144wt_3.pdf Size:55K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC144WT NPN resistor-equipped transistor 1999 May 25 Product specification Supersedes data of 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC144WT FEATURES PINNING � Built-in bias resistors R1 and R2 (typ. 47 k? and 22 k? PIN DESCRIPTION respectively) 1 base/input � Simplifica

1.92. pdtc124ee_2.pdf Size:57K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC124EE NPN resistor-equipped transistor 1998 Jul 31 Product specification Supersedes data of 1997 Jul 11 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124EE FEATURES � Built-in bias resistors R1 and R2 (typ. 22 k? each) � Simplification of circuit design handboo

1.93. pdtc114es_3.pdf Size:57K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114ES NPN resistor-equipped transistor 1998 Nov 26 Product specification Supersedes data of 1998 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114ES FEATURES � Built-in bias resistors R1 and R2 (typ. 10 k? each) � Simplification of circuit design handbook, halfpage 2 � Reduces number of compon

1.94. pdtc144wu_3.pdf Size:57K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC144WU NPN resistor-equipped transistor 1999 May 25 Product specification Supersedes data of 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC144WU FEATURES PINNING � Built-in bias resistors R1 and R2 (typ. 47 k? and 22 k? PIN DESCRIPTION respectively) 1 base/input � Simplifica

1.95. pdtc114yt_3.pdf Size:56K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC114YT NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YT FEATURES � Built-in bias resistors R1 and R2 (typ. 10 and 47 k? respectively) � Simplification of circuit design 3 � Reduces numbe

1.96. pdtc143ee_2.pdf Size:56K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC143EE NPN resistor-equipped transistor 1998 Jul 31 Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143EE FEATURES � Built-in bias resistors R1 and R2 (typ. 4.7 k? each) � Simplification of circuit design handbo

1.97. pdtc144ek_2.pdf Size:57K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTC144EK NPN resistor-equipped transistor 1998 May 19 Objective specification Supersedes data of 1997 Jul 14 File under Discrete Semiconductors, SC04 Philips Semiconductors Objective specification NPN resistor-equipped transistor PDTC144EK FEATURES � Built-in bias resistors R1 and R2 (typ. 47 k? each) 3 ndbook, 4 columns �

1.98. pdtc114et_7.pdf Size:56K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D088 PDTC114ET NPN resistor-equipped transistor 1999 Apr 15 Product specification Supersedes data of 1998 Nov 26 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114ET FEATURES � Built-in bias resistors R1 and R2 (typ. 10 k? each) 3 dbook, 4 columns 3 � Simplification of circuit design R1 � Reduces n

1.99. pdtc123jt_3.pdf Size:56K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123JT NPN resistor-equipped transistor 1999 May 18 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JT FEATURES � Built-in bias resistors R1 and R2 (typ. 2.2 k? and 47 k? respectively) � Simplification of circuit design � Reduces numb

1.100. pdtc124xe_3.pdf Size:55K _motorola

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC124XE NPN resistor-equipped transistor 1999 May 18 Product specification Supersedes data of 1998 Sep 21 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124XE FEATURES � Built-in bias resistors R1 and R2 (typ. 22 k? and 47 k? respectively) � Simplification of circuit design handbook, halfpage 3 3 � Red

1.101. bc160-bc161.pdf Size:50K _philips

DISCRETE SEMICONDUCTORS DATA SHEET M3D110 BC160; BC161 PNP medium power transistors Product specification 1997 May 12 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP medium power transistors BC160; BC161 FEATURES PINNING � High current (max. 1 A) PIN DESCRIPTION � Low voltage (max. 60 V). 1 emitter 2 base

1.102. pdtc143et_4.pdf Size:56K _philips

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1.105. pdtc124e_series.pdf Size:174K _philips

DISCRETE SEMICONDUCTORS DATA SHEET PDTC124E series NPN resistor-equipped transistors; R1 = 22 k?, R2 = 22 k? Product data sheet 2004 Aug 17 Supersedes data of 2003 Apr 14 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; PDTC124E series R1 = 22 k?, R2 = 22 k? FEATURES QUICK REFERENCE DATA � Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT � Simplifi

1.106. pdtc143t_series.pdf Size:174K _philips

DISCRETE SEMICONDUCTORS DATA SHEET PDTC143T series NPN resistor-equipped transistors; R1 = 4.7 k?, R2 = open Product data sheet 2004 Aug 06 Supersedes data of 2004 Apr 06 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; PDTC143T series R1 = 4.7 k?, R2 = open FEATURES QUICK REFERENCE DATA � Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT � Simplifi

1.107. pdtc143z_series.pdf Size:182K _philips

DISCRETE SEMICONDUCTORS DATA SHEET PDTC143Z series NPN resistor-equipped transistors; R1 = 4.7 k?, R2 = 47 k? Product data sheet 2004 Aug 16 Supersedes data of 2004 Apr 06 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; PDTC143Z series R1 = 4.7 k?, R2 = 47 k? FEATURES QUICK REFERENCE DATA � Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT � Simpli

1.108. pdtc124eu_3.pdf Size:58K _philips

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1.113. bc140_bc141_cnv_2.pdf Size:50K _philips

DISCRETE SEMICONDUCTORS DATA SHEET M3D110 BC140; BC141 NPN medium power transistors Product specification 1997 May 12 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN medium power transistors BC140; BC141 FEATURES PINNING � High current (max. 1 A) PIN DESCRIPTION � Low voltage (max. 60 V). 1 emitter 2 base

1.114. pdtc114ee_4.pdf Size:56K _philips

1.115. bc160_bc161.pdf Size:12K _philips

Philips Semiconductors Product specification PNP medium power transistors BC160; BC161 FEATURES PINNING � High current (max. 1 A) PIN DESCRIPTION � Low voltage (max. 60 V). 1 emitter 2 base APPLICATIONS 3 collector, connected to case � General purpose applications. DESCRIPTION 1 handbook, halfpage 3 2 PNP medium power transistor in a TO-39 metal package. NPN complements: BC140 and

1.116. pdtc114yu_1.pdf Size:59K _philips

1.117. pdtc124t_series.pdf Size:174K _philips

DISCRETE SEMICONDUCTORS DATA SHEET PDTC124T series NPN resistor-equipped transistors; R1 = 22 k?, R2 = open Product data sheet 2004 Aug 13 Supersedes data of 2004 Apr 06 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; PDTC124T series R1 = 22 k?, R2 = open FEATURES QUICK REFERENCE DATA � Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT � Simplified

1.118. pdtc144et_5.pdf Size:56K _philips

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1.122. pdtc114y_series.pdf Size:174K _philips

DISCRETE SEMICONDUCTORS DATA SHEET PDTC114Y series NPN resistor-equipped transistors; R1 = 10 k?, R2 = 47 k? Product data sheet 2004 Aug 17 Supersedes data of 2003 Sep 10 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; PDTC114Y series R1 = 10 k?, R2 = 47 k? FEATURES QUICK REFERENCE DATA � Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT � Simplifi

1.123. pdtc144es_2.pdf Size:58K _philips

1.124. pdtc123j_series.pdf Size:174K _philips

DISCRETE SEMICONDUCTORS DATA SHEET PDTC123J series NPN resistor-equipped transistors; R1 = 2.2 k?, R2 = 47 k? Product data sheet 2004 Aug 13 Supersedes data of 2003 Apr 10 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; PDTC123J series R1 = 2.2 k?, R2 = 47 k? FEATURES QUICK REFERENCE DATA � Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT � Simpli

1.125. pdtc123t_ser.pdf Size:78K _philips

PDTC123T series NPN resistor-equipped transistors; R1 = 2.2 k?, R2 = open Rev. 01 � 10 March 2006 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistors (RET) family in Surface Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package PNP complement Philips JEITA JEDEC PDTC123TE SOT416 SC-75 - PDTA123TE PDTC123TK SOT346

1.126. pdtc143x_ser.pdf Size:139K _philips

PDTC143X series NPN resistor-equipped transistors; R1 = 4.7 k?, R2 = 10 k? Rev. 10 � 16 November 2009 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTC143XE SOT416 SC-75 - PDTA143XE PDTC143XEF SOT490 SC-89 - PDTA143XEF PDTC143XK SOT346 SC-59A TO-2

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DISCRETE SEMICONDUCTORS DATA SHEET PDTC144W series NPN resistor-equipped transistors; R1 = 47 k?, R2 = 22 k? Product data sheet 2004 Aug 17 Supersedes data of 2004 Mar 23 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; PDTC144W series R1 = 47 k?, R2 = 22 k? FEATURES QUICK REFERENCE DATA � Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT � Simplifi

1.133. bc177_cnv_3.pdf Size:49K _philips

DISCRETE SEMICONDUCTORS DATA SHEET * M3D125 BC177 PNP general purpose transistor 1997 Jun 04 Product specification Supersedes data of 1997 May 01 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP general purpose transistor BC177 FEATURES PINNING � Low current (max. 100 mA) PIN DESCRIPTION � Low voltage (max. 45 V). 1 emitter 2 base APPLICA

1.134. pdtc114ye_3.pdf Size:56K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BC107; BC108; BC109 NPN general purpose transistors 1997 Sep 03 Product specification Supersedes data of 1997 Jun 03 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN general purpose transistors BC107; BC108; BC109 FEATURES PINNING � Low current (max. 100 mA) PIN DESCRIPTION � Low voltage (max. 45 V).

1.140. pdtc114e_series.pdf Size:174K _philips

DISCRETE SEMICONDUCTORS DATA SHEET PDTC114E series NPN resistor-equipped transistor; R1 = 10 k?, R2 = 10 k? Product data sheet 2004 Aug 05 Supersedes data of 2003 Apr 10 NXP Semiconductors Product data sheet NPN resistor-equipped transistor; PDTC114E series R1 = 10 k?, R2 = 10 k? FEATURES QUICK REFERENCE DATA � Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT � Simplified

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DISCRETE SEMICONDUCTORS DATA SHEET PDTC144T series NPN resistor-equipped transistors; R1 = 47 k?, R2 = open Product data sheet 2004 Aug 17 Supersedes data of 2004 Apr 06 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; PDTC144T series R1 = 47 k?, R2 = open FEATURES QUICK REFERENCE DATA � Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT � Simplified

1.145. 2pc1815.pdf Size:50K _philips

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2PC1815 NPN general purpose transistor Product specification 2004 Nov 05 Supersedes data of 1999 May 28 Philips Semiconductors Product specification NPN general purpose transistor 2PC1815 FEATURES PINNING � Low current (max. 150 mA) PIN DESCRIPTION � Low voltage (max. 50 V). 1 base 2 collector APPLICATIONS 3 emitter � Gene

1.146. pdtc123e_series.pdf Size:182K _philips

DISCRETE SEMICONDUCTORS DATA SHEET PDTC123E series NPN resistor-equipped transistors; R1 = 2.2 k?, R2 = 2.2 k? Product data sheet 2004 Aug 06 Supersedes data of 2004 Mar 18 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; PDTC123E series R1 = 2.2 k?, R2 = 2.2 k? FEATURES QUICK REFERENCE DATA � Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT � Simp

1.147. pdtc114tk_2.pdf Size:52K _philips

1.148. pdtc144ee_2.pdf Size:56K _philips

1.149. pdtc144eef_1.pdf Size:54K _philips

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1.151. pdtc115e_series.pdf Size:182K _philips

DISCRETE SEMICONDUCTORS DATA SHEET PDTC115E series NPN resistor-equipped transistors; R1 = 100 k?, R2 = 100 k? Product data sheet 2004 Aug 06 Supersedes data of 2004 Apr 06 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; PDTC115E series R1 = 100 k?, R2 = 100 k? FEATURES QUICK REFERENCE DATA � Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT � Simp

1.152. 2pc1815_3.pdf Size:47K _philips

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2PC1815 NPN general purpose transistor 1999 May 28 Product specification Supersedes data of 1997 Mar 28 Philips Semiconductors Product specification NPN general purpose transistor 2PC1815 FEATURES PINNING � Low current (max. 150 mA) PIN DESCRIPTION � Low voltage (max. 50 V). 1 base 2 collector APPLICATIONS 3 emitter � Gen

1.153. pdtc143e_series.pdf Size:182K _philips

DISCRETE SEMICONDUCTORS DATA SHEET PDTC143E series NPN resistor-equipped transistors; R1 = 4.7 k?, R2 = 4.7 k? Product data sheet 2004 Aug 05 Supersedes data of 2004 Mar 18 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; PDTC143E series R1 = 4.7 k?, R2 = 4.7 k? FEATURES QUICK REFERENCE DATA � Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT � Simp

1.154. bc107_bc108_bc109.pdf Size:49K _philips

1.155. pdtc124et_5.pdf Size:56K _philips

1.156. pdtc144eu_3.pdf Size:58K _philips

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1.160. pdtc144e_series.pdf Size:182K _philips

DISCRETE SEMICONDUCTORS DATA SHEET PDTC144E series NPN resistor-equipped transistors; R1 = 47 k?, R2 = 47 k? Product data sheet 2004 Aug 17 Supersedes data of 2004 Mar 23 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; PDTC144E series R1 = 47 k?, R2 = 47 k? FEATURES QUICK REFERENCE DATA � Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT � Simplifi

1.161. pdtc144wu_3.pdf Size:57K _philips

1.162. pdtc115t_ser.pdf Size:71K _philips

PDTC115T series NPN resistor-equipped transistors; R1 = 100 k?, R2 = open Rev. 04 � 17 February 2005 Product data sheet 1. Product profile 1.1 General description NPN resistor-equipped transistors. Table 1: Product overview Type number Package PNP complement Philips JEITA PDTC115TE SOT416 SC-75 PDTA115TE PDTC115TK SOT346 SC-59A PDTA115TK PDTC115TM SOT883 SC-101 PDTA115TM [1] PDTC115TS

1.163. pdtc114yt_3.pdf Size:56K _philips

1.164. pdtc143ee_2.pdf Size:56K _philips

1.165. pdtc114t_ser.pdf Size:81K _philips

PDTC114T series NPN resistor-equipped transistors; R1 = 10 k?, R2 = open Rev. 08 � 9 February 2006 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistors (RET) family. Table 1: Product overview Type number Package PNP complement Philips JEITA JEDEC PDTC114TE SOT416 SC-75 - PDTA114TE PDTC114TK SOT346 SC-59A TO-236 PDTA114TK PDTC114TM SOT883 SC-101

1.166. pdtc144ek_2.pdf Size:57K _philips

1.167. pdtc114et_7.pdf Size:56K _philips

1.168. bc177.pdf Size:49K _philips

1.169. pdtc123jt_3.pdf Size:56K _philips

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1.171. plc18v8z.pdf Size:225K _philips2

INTEGRATED CIRCUITS PLC18V8Z Zero standby power CMOS versatile PAL devices Product specification 1997 Aug 08 Replaces data sheet PLC18V8Z35/PLC18V8ZI of Dec 19 1995, and data sheet PLC18V8Z25/PLC18V8ZI of Dec 19, 1995 Philips Semiconductors Philips Semiconductors Product specification Zero standby power PLC18V8Z CMOS versatile PAL devices DESCRIPTION � Industrial control The PLC18

1.172. bc160-bc161.pdf Size:77K _st

BC160 BC161 GENERAL PURPOSE TRANSISTORS DESCRIPTION The BC160, and BC161 are silicon planar epitaxial PNP transistors in TO-39 metal case.They are par- ticurlarly designed foraudio amplifiers and switching applications up to 1A. The complementary NPN types are the BC140 and BC141. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Value Symbol Parameter Unit BC160 BC161 VCBO

1.173. msc1000.pdf Size:100K _st

MSC1000M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .RUGGEDIZED VSWR :1 ? .INPUT MATCHING .LOW THERMAL RESISTANCE .CLASS A OPERATION .P 0.6 W MIN. WITH 10.8 dB GAIN OUT = .280 2LFL (S058) epoxy sealed ORDER CODE BRANDING MSC1000M 1000M PIN CONNECTION DESCRIPTION The MSC1000M is a Class A, common emitter transistor with an emitter ballasted Matrix geo- metry specifically des

1.174. bc107_bc107b.pdf Size:383K _st

BC107 BC107B Low noise general purpose audio amplifiers Description The BC107 and BC107B are silicon planar epitaxial NPN transistors in TO-18 metal case. They are suitable for use in driver stages, low noise input stages and signal processing circuits of television receivers. The PNP complementary types are BC177 and BC177B respectively. TO-18 Internal schematic diagram Order codes

1.175. bc141-16.pdf Size:423K _st

BC141-16 � GENERAL PURPOSE TRANSISTOR DESCRIPTION The BC141-16 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is particularly designed for audio amplifiers and switching application up to 1A. The complementary PNP type is the BC161-16. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0

1.176. stgw35nc120hd.pdf Size:496K _st

STGW35NC120HD 32 A - 1200 V - very fast IGBT Features � Low on-losses � Low on-voltage drop (VCE(sat)) � High current capability � High input impedance (voltage driven) � Low gate charge 3 2 � Ideal for soft switching application 1 TO-247 long leads Application � Induction heating � High frequency inverters � UPS Figure 1. Internal schematic diagram Description This IGBT utilize

1.177. bc139.pdf Size:112K _st

1.178. msc1004m.pdf Size:44K _st

MSC1004M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .1025 - 1150 MHz .RUGGEDIZED VSWR ?:1 .INTERNAL INPUT MATCHING .LOW THERMAL RESISTANCE .P 4.0 W MIN. WITH 9.0 dB GAIN OUT = .280 2LFL (SO68) epoxy sealed ORDER CODE BRANDING MSC1004M 1004M PIN CONNECTION DESCRIPTION The MSC1004M is a low-level Class C pulsed transistor specifically designed for DME/IFF driver or output appl

1.179. bc107-bc108.pdf Size:69K _st

BC107 BC108 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC107 and BC108 are silicon planar epitaxial NPN transistors in TO-18 metal case. They are suitable for use in driver stages, low noise input stages and signal processing circuits of television reveivers. The PNP complemet for BC107 is BC177. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Paramete

1.180. stgb3nc120hd_stgf3nc120hd_stgp3nc120hd.pdf Size:750K _st

STGB3NC120HD STGF3NC120HD, STGP3NC120HD 7 A, 1200 V very fast IGBT with ultrafast diode Features TAB � High voltage capability � High speed � Very soft ultrafast recovery anti-parallel diode 3 3 2 2 1 1 Applications TO-220FP TO-220 � Home appliance TAB � Lighting 3 1 Description D?PAK This high voltage and very fast IGBT shows an excellent trade-off between low conduction

1.181. stgf3nc120hd_stgp3nc120hd.pdf Size:637K _st

STGF3NC120HD STGP3NC120HD 7 A, 1200 V very fast IGBT Features � Low on-voltage drop (VCE(sat)) TAB � High current capability � Off losses include tail current � High speed 3 3 2 2 1 1 Application TO-220FP TO-220 � Home appliance � Lighting Description This IGBT utilizes the advanced PowerMESH� process resulting in an excellent trade-off Figure 1. Internal schematic diagram

1.182. msc1000m.pdf Size:98K _st

MSC1000MP RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .RUGGEDIZED VSWR :1 ? .INPUT MATCHING .LOW THERMAL RESISTANCE .CLASS A OPERATION .P 0.6 W MIN. WITH 10.8 dB GAIN OUT = .280 4LSL (S053) epoxy sealed ORDER CODE BRANDING MSC1000MP 1000MP PIN CONNECTION DESCRIPTION The MSC1000MP is a Class A, common emitter transistor with an emitter ballasted Matrix geo- metry specifically

1.183. bc140-bc141.pdf Size:75K _st

BC140 BC141 GENERAL PURPOSE TRANSISTORS DESCRIPTION The BC140 and BC141 are silicon planar epitaxial NPN transistors in TO-39 metal case. They are par- ticularly designed for audio amplifiers and switching applications up to 1 A. The complementary PNP types are the BC160 and BC161. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Value Symbol Parameter BC140 BC141 Unit VCBO

1.184. stgw30nc120hd.pdf Size:308K _st

STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH� IGBT Features IC VCE(sat) Type VCES @25�C @100�C STGW30NC120HD 1200V < 2.75V 30A � Low on-losses 3 � Low on-voltage drop (Vcesat) 2 1 � High current capability TO-247 � High input impedance (voltage driven) � Low gate charge � Ideal for soft switching application Application Figure 1. Internal schematic diagram

1.185. bc107-bc108-bc109.pdf Size:100K _st

BC107 BC108-BC109 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC107, BC108 and BC109 are silicon planar epitaxial NPN transistors in TO-18 metal case.They are suitable for use in driver stages, low noise input stages and signal processing circuits of television receivers. The complementary PNP types are re- spectively the BC177, BC178 and BC179. TO-18 INTERNAL SCHEMATIC D

1.186. bc177-bc178-bc179.pdf Size:86K _st

BC177 BC178-BC179 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC177, BC178 and BC179 are silicon planar epitaxial PNP transistors in TO-18 metal case.They are suitable for use in driver audio stages, low noise input audio stages and as low power, high gain general purpose transistors. The complementary NPN types are respectively the BC107, BC108 and BC109. TO-18 INTERNAL

1.187. bc161-16.pdf Size:526K _st

BC161-16 � GENERAL PURPOSE TRANSISTOR PRELIMINARY DATA DESCRIPTION The BC161-16 is a silicon Planar Epitaxial PNP transistor in Jedec TO-39 metal case. It is particularly designed for audio amplifiers and switching application up to 1A. The complementary NPN type is the BC141-16. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Ba

1.188. msc1004mp.pdf Size:42K _st

MSC1004MP RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .1025 - 1150 MHz .RUGGEDIZED VSWR ?:1 .INTERNAL INPUT MATCHING .LOW THERMAL RESISTANCE .P 4.0 W MIN. WITH 9.0 dB GAIN OUT = .280 4LFL (SO51) epoxy sealed ORDER CODE BRANDING MSC1004MP 1004MP PIN CONNECTION DESCRIPTION The MSC1004MP is a low-level Class C pulsed transistor specifically designed for DME/IFF driver or output

1.189. 2sc1569.pdf Size:244K _toshiba

1.190. 2sc108a_2sc109a.pdf Size:42K _toshiba

1.191. 2sc1169.pdf Size:63K _toshiba

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

1.192. 2sc1678.pdf Size:61K _toshiba

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

1.193. 2sc1923.pdf Size:525K _toshiba

2SC1923 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC1923 High Frequency Amplifier Applications Unit: mm FM, RF, MIX, IF Amplifier Applications � Small reverse transfer capacitance: Cre = 0.7 pF (typ.) � Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) Maximum Ratings (Ta = = 25�C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 4

1.194. 2sc1815.pdf Size:272K _toshiba

2SC1815 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Unit: mm Driver Stage Amplifier Applications High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) � Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) � Low n

1.195. 2sc1624_2sc1625.pdf Size:90K _toshiba

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

1.196. 2sc1627.pdf Size:210K _toshiba

2SC1627 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1627 Driver Stage Amplifier Applications Unit: mm Voltage Amplifier Applications � Complementary to 2SA817 � Driver stage application of 20 to 25 watts amplifiers. Maximum Ratings (Ta = = 25�C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Em

1.197. 2sc1959.pdf Size:199K _toshiba

2SC1959 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SC1959 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications � Excellent hFE linearity : h = 25 (min): V = 6 V, I = 400 mA FE (2) CE C � 1 watt amplifier applications. � Complementary to 2SA562TM. Maximum Ratings (Ta = = 25�C) = = Characteri

1.198. 2sc1627a.pdf Size:170K _toshiba

1.199. 2sc1815-t.pdf Size:213K _toshiba

1.200. 2sc1815l.pdf Size:308K _toshiba

2SC1815(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815(L) Audio Frequency Voltage Amplifier Applications Unit: mm Low Noise Amplifier Applications � High breakdown voltage, high current capability : V = 50 V (min), I = 150 mA (max) CEO C � Excellent linearity of h FE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : h (I = 0.1 mA)/h (I = 2 mA) = 0.95

1.201. 2sc1173.pdf Size:93K _toshiba

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

1.202. 2sc1617.pdf Size:153K _toshiba

1.203. fc107.pdf Size:49K _sanyo

Ordering number:EN3075 FC107 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications Features Package Dimensions � On-chip bias resistors (R1=47k? , R2=47k? ) unit:mm � Composite type with 2 transistors contained in the 2066 CP package currently in use, improving the mount- [FC107] ing efficiency greatly. � The FC107 is formed with two chips, being equiva- lent to

1.204. fc150.pdf Size:171K _sanyo

Ordering number:EN3965 FC150 PNP/NPN Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp, Driver Applications Features Package Dimensions � Composite type with 2 transistors contained in the unit:mm CP package currently in use, improving the mount- 2067 ing efficiency greatly. [FC150] � The FC150 is formed with two chips, being equiva- lent to the 2SA181

1.205. fc108.pdf Size:49K _sanyo

Ordering number:EN3076 FC108 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features Package Dimensions � On-chip bias resistors (R1=47k? , R2=47k? ) unit:mm � Composite type with 2 transistors contained in the 2066 CP package currently in use, improving the mount- [FC108] ing efficiency greatly. � The FC108 is formed with two chips, being equiva- lent to

1.206. fc144.pdf Size:42K _sanyo

Ordering number:EN3479 FC144 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) Applications Package Dimensions � Switching circuits, inverter circuits, interface circuits, unit:mm driver circuits. 2066 [FC144] Features � On-chip bias resistances (R1=2.2k?, R2=10k? ). � Composite type with 2 transistors contained in the CP package curre

1.207. fc125.pdf Size:41K _sanyo

Ordering number:EN3279 FC125 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance) Features Package Dimensions � On-chip bias resistance (R1=47k? ). unit:mm � Composite type with 2 transistors contained in the 2066 CP package currently in use, improving the mount- [FC125] ing efficiency greatly. � The FC125 is formed with two chips, being eq

1.208. fc151.pdf Size:162K _sanyo

Ordering number:EN4652 FC151 PNP Epitaxial Planar Silicon Composite Transistor High-Frequency Amp, Current Mirror Circuit Applications Features Package Dimensions � Composite type with 2 transistors contained in the CP unit:mm package currently in use, improving the mounting 2103A efficiency greatly. [FC151] � The FC151 is formed with two chips, being equiva- lent to the 2SA1669, pla

1.209. fc134.pdf Size:42K _sanyo

Ordering number:EN3288 FC134 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) Features Package Dimensions � On-chip bias resistances (R1=10k?, R2=47k?) ). unit:mm � Composite type with 2 transistors contained in the 2066 CP package currently in use, improving the mount- [FC134] ing efficiency greatly. � The FC134 is formed with two chi

1.210. rc104c.pdf Size:85K _sanyo

Ordering number:EN4764 PNP/NPN Epitaxial Planar Silicon Transistors RA104C/RC104C Switching Applications (with Bias Resistances) Applications Package Dimensions � Switching circuits, inverter circuits, interface circuits, unit:mm driver circuits. 2018B [RA104C/RC104C] Features 0.4 0.16 � On-chip bias resistances (R1=10k? , R2=47k? ). 3 � Compact package (CP). 0 to 0.1 1 0.95 2

1.211. fc156.pdf Size:183K _sanyo

Ordering number:EN5432 FC156 NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amp, Differential Amp Applications Features Package Dimensions � Composite type with 2 transistors contained in the CP unit:mm package currently in use, improving the mounting 2104A efficiency greatly. [FC156] � The FC156 is formed with two chips, being equiva- lent to the 2SC5226,

1.212. fc137.pdf Size:41K _sanyo

Ordering number:EN3291 FC137 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) Features Package Dimensions � On-chip bias resistances (R1=4.7k?) ). unit:mm � Composite type with 2 transistors contained in the 2066 CP package currently in use, improving the mount- [FC137] ing efficiency greatly. � The FC137 is formed with two chips, bein

1.213. fc132.pdf Size:45K _sanyo

Ordering number:EN3286 FC132 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) Features Package Dimensions � On-chip bias resistances (R1=10k?, R2=47k? ). unit:mm � Composite type with 2 transistors contained in the 2067 CP package currently in use, improving the mount- [FC132] ing efficiency greatly. � The FC132 is formed with two chip

1.214. fc129.pdf Size:42K _sanyo

Ordering number:EN3283 FC129 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) Features Package Dimensions � On-chip bias resistance (R1=10k? ). unit:mm � Composite type with 2 transistors contained in the 2066 CP package currently in use, improving the mount- [FC129] ing efficiency greatly. � The FC129 is formed with two chips, being e

1.215. fc139.pdf Size:109K _sanyo

Ordering number:EN3324 FC139 NPN Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp, General Driver Applications Features Package Dimensions � Composite type with 2 transistors contained in the unit:mm CP package currently in use, improving the mount- 2067 ing efficiency greatly. [FC139] � The FC139 is formed with two chips, being equiva- lent to the 2SC

1.216. fc120.pdf Size:201K _sanyo

Ordering number:EN3062A FC120 NPN Epitaxial Planar Silicon Composite Transistor High-Frequency General-Purpose Amp, Differential Amp Applications Features Package Dimensions � Composite type with 2 transistors contained in the unit:mm CP package currently in use, improving the mount- 2068 ing efficiency greatly. [FC120] � The FC120 is formed with two chips, being equiva- lent to th

1.217. fc155.pdf Size:141K _sanyo

Ordering number:EN5063 FC155 PNP Epitaxial Planar Silicon Transistor (With bias resistances) PNP Epitaxail Planar Silicon Transistor Constant-Current Circuit Applications Features Package Dimensions � Complex type of 2 devices (transistor with resis- unit:mm tances and low saturation transistor) contained in one 2104A package, facilitating high-density mounting. [FC155] Electrical Con

1.218. fc126.pdf Size:41K _sanyo

Ordering number:EN3280 FC126 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) Features Package Dimensions � On-chip bias resistance (R1=47k? ). unit:mm � Composite type with 2 transistors contained in the 2066 CP package currently in use, improving the mount- [FC126] ing efficiency greatly. � The FC126 is formed with two chips, being e

1.219. fc123.pdf Size:43K _sanyo

Ordering number:EN3277 FC123 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) Features Package Dimensions � On-chip bias resistance (R1=47k? ). unit:mm � Composite type with 2 transistors contained in the 2067 CP package currently in use, improving the mount- [FC123] ing efficiency greatly. � The FC123 is formed with two chips, being e

1.220. 2sc1756.pdf Size:40K _sanyo

1.221. fc116.pdf Size:49K _sanyo

Ordering number:EN3084 FC116 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features Package Dimensions � On-chip bias resistors (R1=10k? , R2=10k? ) unit:mm � Composite type with 2 transistors contained in the 2066 CP package currently in use, improving the mount- [FC116] ing efficiency greatly. � The FC116 is formed with two chips, being equiva- lent to

1.222. fc113.pdf Size:50K _sanyo

Ordering number:EN3081 FC113 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications Features Package Dimensions � On-chip bias resistors (R1=10k? , R2=10k? ) unit:mm � Composite type with 2 transistors contained in the 2067 CP package currently in use, improving the mount- [FC113] ing efficiency greatly. � The FC113 is formed with two chips, being equiva- lent to

1.223. fc136.pdf Size:42K _sanyo

Ordering number:EN3290 FC136 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) Features Package Dimensions � On-chip bias resistance (R1=4.7k? ). unit:mm � Composite type with 2 transistors contained in the 2067 CP package currently in use, improving the mount- [FC136] ing efficiency greatly. � The FC136 is formed with two chips, being

1.224. fc118.pdf Size:76K _sanyo

Ordering number:EN3116 FC118 NPN Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp Applications Features Package Dimensions � Composite type with 2 transistors contained in the unit:mm CP package currently in use, improving the mount- 2067 ing efficiency greatly. [FC118] � The FC118 is formed with two chips, being equiva- lent to the 2SC4577, placed in

1.225. fc149.pdf Size:114K _sanyo

Ordering number:EN3964 FC149 PNP Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp, Driver Applications Features Package Dimensions � Composite type with 2 transistors contained in the unit:mm CP package currently in use, improving the mount- 2067A ing efficiency greatly. [FC149] � The FC149 is formed with two chips, being equiva- lent to the 2SA1813,

1.226. fc117.pdf Size:104K _sanyo

Ordering number:EN3115 FC117 PNP Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp Applications Features Package Dimensions � Composite type with 2 transistors contained in the unit:mm CP package currently in use, improving the mount- 2067 ing efficiency greatly. [FC117] � The FC117 is formed with two chips, being equiva- lent to the 2SA1753, placed in

1.227. fc152.pdf Size:156K _sanyo

Ordering number:EN4653 FC152 PNP Epitaxial Planar Silicon Composite Transistor High-Frequency Amp, Differential Amp Applications Features Package Dimensions � Composite type with 2 transistors contained in the unit:mm CP package currently in use, improving the mount- 2104A ing efficiency greatly. [FC152] � The FC152 is formed with two chips, being equiva- lent to the 2SC4270, placed

1.228. fc112.pdf Size:49K _sanyo

Ordering number:EN3080 FC112 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features Package Dimensions � On-chip bias resistors (R1=22k? , R2=22k? ) unit:mm � Composite type with 2 transistors contained in the 2066 CP package currently in use, improving the mount- [FC112] ing efficiency greatly. � The FC112 is formed with two chips, being equiva- lent to

1.229. fc133.pdf Size:42K _sanyo

Ordering number:EN3287 FC133 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) Features Package Dimensions � On-chip bias resistances (R1=10k?, R2=47k?) ). unit:mm � Composite type with 2 transistors contained in the 2066 CP package currently in use, improving the mount- [FC133] ing efficiency greatly. � The FC133 is formed with two chi

1.230. 2sc1046.pdf Size:39K _sanyo

1.231. fc131.pdf Size:42K _sanyo

Ordering number:EN3285 FC131 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) Features Package Dimensions � On-chip bias resistances (R1=10k?, R2=47k?) ). unit:mm � Composite type with 2 transistors contained in the 2067 CP package currently in use, improving the mount- [FC131] ing efficiency greatly. � The FC131 is formed with two chi

1.232. fc13.pdf Size:40K _sanyo

Ordering number:ENN4336 N-Channel Junction Silicon FET FC13 Low-Frequency General-Purpose Amp, Differential Amp, Analog Switch Applications Features Package Dimensions � Composite type with 2 FETs contained in the CP unit:mm package currently in use, improving the mounting 2095A efficiency greatly. [FC13] � The FC13 is formed with two chips, being equivalent to the 2SK303, placed in

1.233. 2sc1755.pdf Size:53K _sanyo

Ordering number:EN429E NPN Triple Diffused Planar Silicon Transistor 2SC1755 TV Chroma, Video, Audio Output Applications Package Dimensions unit:mm 2010C [2SC1755] JEDEC : TO-220AB 1 : Base EIAJ : SC-46 2 : Collector 3 : Emitter Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 300 V Collector-to-Emitter Volt

1.234. fc12.pdf Size:52K _sanyo

Ordering number:ENN3482 TR:NPN Epitaxial Plannar Silicon Transistor FET:N-Channel Junction Silicon Transistor FC12 High-Frequency Amp, AM Applications, Low-Frequency Amp Features Package Dimensions � Composite type with 2 transistors contained in the unit:mm CP package currently in use, improving the mount- 2075 ing efficiency greatly. [FC12] � The FC12 is formed with two chips, bei

1.235. fc138.pdf Size:41K _sanyo

Ordering number:EN3292 FC138 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) Features Package Dimensions � On-chip bias resistance (R1=4.7k? ). unit:mm � Composite type with 2 transistors contained in the 2066 CP package currently in use, improving the mount- [FC138] ing efficiency greatly. � The FC138 is formed with two chips, being

1.236. fc157.pdf Size:204K _sanyo

Ordering number:EN5433 FC157 NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amp, Differential Amp Applications Features Package Dimensions � Composite type with 2 transistors contained in the unit:mm CP package currently in use, improving the mount- 2067A ing efficiency greatly. [FC157] � The FC157 is formed with two chips, being equiva- lent to the 2SC52

1.237. fc130.pdf Size:41K _sanyo

Ordering number:EN3284 FC130 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) Features Package Dimensions � On-chip bias resistance (R1=10k? ). unit:mm � Composite type with 2 transistors contained in the 2066 CP package currently in use, improving the mount- [FC130] ing efficiency greatly. � The FC130 is formed with two chips, being e

1.238. fc115.pdf Size:49K _sanyo

Ordering number:EN3083 FC115 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications Features Package Dimensions � On-chip bias resistors (R1=10k? , R2=10k? ) unit:mm � Composite type with 2 transistors contained in the 2066 CP package currently in use, improving the mount- [FC115] ing efficiency greatly. � The FC115 is formed with two chips, being equiva- lent to

1.239. fc121.pdf Size:44K _sanyo

Ordering number:EN3190 FC121 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) Features Package Dimensions � On-chip bias resistances (R1=2.2k? , R2=10k? ). unit:mm � Composite type with 2 transistors contained in the 2066 CP package currently in use, improving the mount- [FC121] ing efficiency greatly. � The FC121 is formed with two ch

1.240. fc135.pdf Size:43K _sanyo

Ordering number:EN3289 FC135 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) Features Package Dimensions � On-chip bias resistance (R1=4.7k?) ). unit:mm � Composite type with 2 transistors contained in the 2067 CP package currently in use, improving the mount- [FC135] ing efficiency greatly. � The FC135 is formed with two chips, being

1.241. fc119.pdf Size:166K _sanyo

Ordering number:EN3061A FC119 NPN Epitaxial Planar Silicon Transistor High-Frequency General-Purpose Amp, Differential Amp Applications Features Package Dimensions � Composite type with 2 transistors contained in the unit:mm CP package currently in use, improving the mount- 2068 ing efficiency greatly. [FC119] � The FC119 is formed with two chips, being equiva- lent to the 2SC2814,

1.242. 2sc1571l.pdf Size:747K _sanyo

1.243. fc124.pdf Size:41K _sanyo

Ordering number:EN3278 FC124 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) Features Package Dimensions � On-chip bias resistance (R1=47k? ). unit:mm � Composite type with 2 transistors contained in the 2067 CP package currently in use, improving the mount- [FC124] ing efficiency greatly. � The FC124 is formed with two chips, being e

1.244. fc127.pdf Size:42K _sanyo

Ordering number:EN3281 FC127 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) Features Package Dimensions � On-chip bias resistance (R1=10k? ). unit:mm � Composite type with 2 transistors contained in the 2067 CP package currently in use, improving the mount- [FC127] ing efficiency greatly. � The FC127 is formed with two chips, being e

1.245. fc142.pdf Size:44K _sanyo

Ordering number:EN3477 FC142 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) Features Package Dimensions � On-chip bias resistance (R1=4.7k?, R2=10k? ). unit:mm � Composite type with 2 transistors contained in the 2066 CP package currently in use, improving the mount- [FC142] ing efficiency greatly. � The FC142 is formed with two chip

1.246. fc105.pdf Size:48K _sanyo

Ordering number:EN3073 FC105 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications Features Package Dimensions � On-chip bias resistors (R1=47k? , R2=47k? ) unit:mm � Composite type with 2 transistors contained in the 2067 CP package currently in use, improving the mount- [FC105] ing efficiency greatly. � The FC105 is formed with two chips, being equiva- lent to

1.247. fc143.pdf Size:42K _sanyo

Ordering number:EN3478 FC143 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) Applications Package Dimensions � Switching circuits, inverter circuits, interface circuits, unit:mm driver circuits. 2066 [FC143] Features � On-chip bias resistance (R1=4.7k?, R2=10k? ). � Composite type with 2 transistors contained in the CP package curren

1.248. fc111.pdf Size:51K _sanyo

Ordering number:EN3079 FC111 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications Features Package Dimensions � On-chip bias resistors (R1=22k? , R2=22k? ) unit:mm � Composite type with 2 transistors contained in the 2066 CP package currently in use, improving the mount- [FC111] ing efficiency greatly. � The FC111 is formed with two chips, being equiva- lent to

1.249. fc114.pdf Size:49K _sanyo

Ordering number:EN3082 FC114 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features Package Dimensions � On-chip bias resistors (R1=10k? , R2=10k? ) unit:mm � Composite type with 2 transistors contained in the 2067 CP package currently in use, improving the mount- [FC114] ing efficiency greatly. � The FC114 is formed with two chips, being equiva- lent to

1.250. fc154.pdf Size:270K _sanyo

Ordering number:EN5099 FC154 NPN/PNP Epitaxial Planar Silicon Transistor High-Speed Switching, High-Frequency Amp Applications Features Package Dimensions � Composite type with NPN transistor and a PNP unit:mm transistor contained in the conventional CP package, 2104A improving the mounting efficiency greatly. [FC154] � The FC154 is formed with two chips, being equiva- lent to the 2

1.251. fc128.pdf Size:42K _sanyo

Ordering number:EN3282 FC128 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) Features Package Dimensions � On-chip bias resistance (R1=10k? ). unit:mm � Composite type with 2 transistors contained in the 2067 CP package currently in use, improving the mount- [FC128] ing efficiency greatly. � The FC128 is formed with two chips, being e

1.252. fc140.pdf Size:128K _sanyo

Ordering number:EN3361 FC140 NPN Epitaxial Planar Silicon Composite Transistor High-Speed Switching Applications Features Package Dimensions � Composite type with 2 transistors contained in the unit:mm CP package currently in use, improving the mount- 2074 ing efficiency greatly. [FC140] � Small output capacitance, high gain-bandwidth product. � The FC140 is formed with two chips,

1.253. fc11.pdf Size:91K _sanyo

Ordering number:EN3154 FC11 N-Channel Junction Silicon FET Low-Frequency General-Purpose Amp, Differential Amp Applications Features Package Dimensions � Adoption of FBET process. unit:mm � Composite type with 2 transistors contained in the 2070 CP package currently in use, improving the mount- [FC11] ing efficiency greatly. � The FC11 is formed with two chips, being equivalent to

1.254. fc110.pdf Size:49K _sanyo

Ordering number:EN3078 FC110 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features Package Dimensions � On-chip bias resistors (R1=22k? , R2=22k? ) unit:mm � Composite type with 2 transistors contained in the 2067 CP package currently in use, improving the mount- [FC110] ing efficiency greatly. � The FC110 is formed with two chips, being equiva- lent to

1.255. fc109.pdf Size:49K _sanyo

Ordering number:EN3077 FC109 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications Features Package Dimensions � On-chip bias resistors (R1=22k? , R2=22k? ) unit:mm � Composite type with 2 transistors contained in the 2067 CP package currently in use, improving the mount- [FC109] ing efficiency greatly. � The FC109 is formed with two chips, being equiva- lent to

1.256. rc101c.pdf Size:82K _sanyo

Ordering number:EN4775 PNP/NPN Epitaxial Planar Silicon Transistors RA101C/RC101C Switching Applications (with Bias Resistances) Features Package Dimensions � On-chip bias resistances (R1=47k? , R2=47k? ). unit:mm � Compact package (CP). 2018B [RA101C/RC101C] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 : Base 2 : Emitter ( ) : RA101C 3 : Collector SANYO : CP Specification

1.257. fc18.pdf Size:67K _sanyo

Ordering number:ENN4983 TR:NPN Epitaxial Planar Silicon Transistor FET:N-Channel Junction Silicon FET FC18 High-Frequency Amp, AM Amp, Low-Frequency Amp Applications Features Package Dimensions � Composed of 2 chips, one being equivalent to the unit:mm 2SK2394 and the other the 2SC4639, in the 2122 convertional CP package, improving the mounting [FC18] efficiency greatly. � Drain a

1.258. r07ds0432ej_2sc1213ak-1.pdf Size:102K _renesas

Preliminary Datasheet R07DS0432EJ0300 2SC1213A(K) (Previous: REJ03G0685-0200) Rev.3.00 Silicon NPN Epitaxial Jun 07, 2011 Application � Low frequency amplifier � Medium speed switching Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25�C) Item Symbol Ratings Unit Collector to b

1.259. rej03g1830_rjk03c1dpbds.pdf Size:278K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.260. r07ds0431ej_2sc1213a-1.pdf Size:170K _renesas

Preliminary Datasheet R07DS0431EJ0300 2SC1213, 2SC1213A (Previous: REJ03G0684-0200) Rev.3.00 Silicon NPN Epitaxial Jun 07, 2011 Application � Low frequency amplifier � Complementary pair with 2SA673 and 2SA673A Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25�C) Item Symbol 2S

1.261. bc182.pdf Size:47K _fairchild_semi

BC182 NPN General Purpose Amplifier � This device is designed for general purpose amplifier application at collector currents to 100mA. � Sourced from process 10. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TC=25�C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 50 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6 V

1.262. ksc1393.pdf Size:41K _fairchild_semi

KSC1393 TV VHF Tuner RF Amplifier (Forward AGC) � High Current Gain Bandwidth Product : fT=700MHz (TYP.) � Low Noise Figure : NF=3.0dB (MAX.) at f=200MHz � Low Reverse Transfer Capacitance : CRE=0.5pF (MAX.) TO-92 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25�C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base

1.263. ksc1187.pdf Size:48K _fairchild_semi

KSC1187 TV 1st, 2nd Picture IF Amplifier (Forward AGC) � High Current Gain Bandwidth Product : fT=700MHz � High Power Gain : GPE=24dB (TYP.) at f=45MHz TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25�C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO

1.264. ksc1674.pdf Size:42K _fairchild_semi

KSC1674 TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator � High Current Gain Bandwidth Product : fT=600MHz (TYP.) � Suffix �-C� means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25�C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 30 V

1.265. ksc1845.pdf Size:49K _fairchild_semi

KSC1845 Audio Frequency Low Noise Amplifier � Complement to KSA992 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25�C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current 50 mA IB Base Current 10 mA PC Collect

1.266. ksc1675.pdf Size:42K _fairchild_semi

KSC1675 FM/AM RF AMP, MIX, CONV,OSC,IF � Collector-Base Voltage : VCEO=30V � High Current Gain Bandwidth Product : fT=300MHz (TYP.) � Low Collector Capacitance : COB=2.0pF (TYP.) � Suffix �-C� means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25�C unless otherwise noted Symbol Pa

1.267. bc184l.pdf Size:25K _fairchild_semi

BC184L Silicon NPN Small Signal Transistor (Note 1) � BVCEO = 30V (Min.) � hFE = 130 (Min.) @VCE = 5.0V, IC = 100mA TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25�C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 500 mA PC Collector D

1.268. fdmc15n06.pdf Size:614K _fairchild_semi

July 2009 FDMC15N06 N-Channel MOSFET 55V, 15A, 0.090? Features Description � RDS(on) = 0.075? ( Typ.)@ VGS = 10V, ID = 15A These N-Channel power MOSFETs are manufactured using the innovative UItraFET process. This advanced process technology � 100% Avalanche Tested achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.This device is capable

1.269. bc184.pdf Size:99K _fairchild_semi

September 2007 BC184 Silicon NPN Small Signal Transistor � BVCEO = 30V (Min.) � hFE = 130 (Min.) @VCE = 5.0V, IC = 100mA TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TC=25�C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 45 V VEBO Emitter-Base Voltage 5 V I C Collector Current (DC) 100 mA TJ, TST

1.270. fjc1386.pdf Size:439K _fairchild_semi

July 2005 FJC1386 PNP Epitaxial Silicon Transistor Low Saturation Transistor Medium Power Amplifier � Complement to FJC2098 � High Collector Current � Low Collector-Emitter Saturation Voltage Marking 1 3 8 6 P Y W W SOT-89 1 Weekly code 1. Base 2. Collector 3. Emitter Year code hFE grage Absolute Maximum Ratings Ta = 25�C unless otherwise noted Symbol Parameter Value Units VCBO C

1.271. ksc1008.pdf Size:149K _fairchild_semi

September 2006 KSC1008 tm NPN Epitacial Silicon Transistor Features � Low frequency amplifier medium speed switching. � High Collector-Base Voltage : VCBO=80V. � Collector Current : IC=700mA � Collector Power Dissipation : PC=800mW TO-92 � Suffix �-C� means Center Collector (1.Emitter 2.Collector 3.Base) � Non suffix �-C� means Side Collector (1.Emitter 2.Base 3.Collector) 1 2 3 KSC1

1.272. fjc1963.pdf Size:110K _fairchild_semi

June 2009 FJC1963 NPN Epitaxial Silicon Transistor Features � Audio Power Amplifier Applications � Complement to FJC1308 � High Collector Current � Low Collector-Emitter Saturation Voltage Marking 1 9 6 3 P Y W W SOT-89 1 Weekly code 1. Base 2. Collector 3. Emitter Year code hFE grage Absolute Maximum Ratings TA = 25�C unless otherwise noted Symbol Parameter Value Units VCBO C

1.273. bc184c.pdf Size:25K _fairchild_semi

BC184C Silicon NPN Small Signal Transistor (Note 1) � BVCEO = 30V (Min.) � hFE = 130 (Min.) @VCE = 5.0V, IC = 100mA TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TC=25�C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 500 mA PC Collector D

1.274. d45c11.pdf Size:95K _fairchild_semi

January 2010 D45C11 PNP Current Driver Transistor Features � This device is designed for power amplifier, regulator and switching circuits where speed is important. � Sourced from Process 5P. � NZT751 for characteristics. TO-220 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* TA = 25�C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage -80

1.275. bc183.pdf Size:122K _fairchild_semi

June 2007 BC183 NPN General Purpose Amplifer TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TC=25�C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 100 mA PC Collector Dissipation (Ta=25�C) 350 mW TSTG , TJ Storage Junction Temperature Rang

1.276. ksc1623.pdf Size:60K _fairchild_semi

KSC1623 Low Frequency Amplifier & High Frequency 3 OSC. � Complement to KSA812 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25�C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current 100 mA PC Collector

1.277. bc182lb.pdf Size:27K _fairchild_semi

BC182LB NPN General Purpose Amplifier � This device is designed for general purpose amplifier application at collector currents to 100mA. � Sourced from process 10. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25�C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 50 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6

1.278. ksc1815.pdf Size:44K _fairchild_semi

KSC1815 Audio Frequency Amplifier & High Frequency OSC � Complement to KSA1015 � Collector-Base Voltage : VCBO= 50V TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25�C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collecto

1.279. bc183lc.pdf Size:68K _fairchild_semi

BC183LC NPN General purpose Amplifier. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25�C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 100 mA PC Collector Dissipation (Ta=25�C) 350 mW TJ Junction Temperature 150 �C TSTG Storage Tempe

1.280. bc184lc.pdf Size:25K _fairchild_semi

BC184LC Silicon NPN Small Signal Transistor (Note 1) � BVCEO = 30V (Min.) � hFE = 250 (Min.) @VCE = 5.0V, IC = 2mA TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25�C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 200 mA PC Collector Di

1.281. ksc1173.pdf Size:248K _fairchild_semi

August 2009 KSC1173 NPN Epitaxial Silicon Transistor Features � Low Frequency Power Amplifier, Power Regulator � Collector Current : IC=3A � Collector Dissipation : PC=10W (TC=25�C) � Complement to KSA473 TO-220 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings * TA = 25�C unless otherwise noted Symbol Parameter Value Units BVCBO Collector-Base Voltage 30 V BVCEO Collector-

1.282. bc182l.pdf Size:26K _fairchild_semi

BC182L NPN General Purpose Amplifier � This device is designed for general purpose amplifier application at collector currents to 100mA. � Sourced from process 10. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25�C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 50 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6 V

1.283. bc182b.pdf Size:27K _fairchild_semi

BC182B NPN General Purpose Amplifier � This device is designed for general purpose amplifier application at collector currents to 100mA. � Sourced from process 10. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TC=25�C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 50 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6 V

1.284. ksc1009.pdf Size:37K _fairchild_semi

KSC1009 High Voltage Amplifier � High Collector-Base Voltage : VCBO=160V � Collector Current : IC=700mA � Collector Power Dissipation : PC=800mW � Complement to KSA709 � Suffix �-C� means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25�C unless otherwise noted Symbol Parameter Ra

1.285. bc183c.pdf Size:123K _fairchild_semi

June 2007 BC183C NPN General Purpose Amplifer TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TC=25�C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 100 mA PC Collector Dissipation (Ta=25�C) 350 mW TSTG , TJ Storage Junction Temperature Ran

1.286. fjc1308.pdf Size:441K _fairchild_semi

July 2005 FJC1308 PNP Epitaxial Silicon Transistor Audio Power Amplifier Applications � Complement to FJC1963 � High Collector Current � Low Collector-Emitter Saturation Voltage Marking 1 3 0 8 P Y W W SOT-89 1 Weekly code 1. Base 2. Collector 3. Emitter Year code hFE grage Absolute Maximum Ratings TC = 25�C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base

1.287. ksc1507.pdf Size:38K _fairchild_semi

KSC1507 Color TV Chroma Output � High Collector-Emitter Voltage : VCEO=300V � Current Gain Bandwidth Product : fT=40MHz (Min.) TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25�C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V

1.288. irg4ibc10ud.pdf Size:180K _international_rectifier

PD - 93765 IRG4IBC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast Co-Pack IGBT ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features � UltraFast: Optimized for high operating up to VCE(on) typ. = 2.15V 80 kHz in hard switching, > 200 kHz in resonant mode G � Generation 4 IGBT design provides tighter @VGE = 15V, IC = 5.0A parameter distribution and higher efficiency than E

1.289. irlc1304.pdf Size:31K _international_rectifier

PD- 91871 IRLC1304 HEXFET� Power MOSFET Die in Wafer Form D 40 V Size 4.6 Rds(on)=0.020? G 6" Wafer S Electrical Characteristics ( Wafer Form ) Parameter Description Guaranteed (Min/Max) Test Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40V Min. VGS = 0V, ID = 250�A RDS(on) Static Drain-to-Source On-Resistance 0.020? Max. VGS = 10V, ID = 5.0A 0.030? Max. VGS = 4.5V, ID = 5.0

1.290. irg4bc10k.pdf Size:158K _international_rectifier

D IRG4BC10K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features C � Short Circuit Rated UltraFast: Optimized for high VCES = 600V operating frequencies >5.0 kHz , and Short Circuit Rated to 10�s @ 125�C, VGE = 15V � Generation 4 IGBT design provides higher efficiency VCE(on) typ. = 2.39V G than Generation 3 � Industry standard TO-220AB package

1.291. irg4cc10sb.pdf Size:41K _international_rectifier

PD- 91827 IRG4CC10SB IRG4CC10SB IGBT Die in Wafer Form C 600 V Size 1 Standard Speed G 6" Wafer E Electrical Characteristics ( Wafer Form ) Parameter Description Guaranteed (Min/Max) Test Conditions VCE (on) Collector-to-Emitter Saturation Voltage 4.5V Max. IC = 1.5A, TJ = 25�C, VGE = 15V V(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25�C, ICES = 250�A, VGE = 0V VGE(t

1.292. irfc1404.pdf Size:24K _international_rectifier

PD - 93776 IRFC1404 HEXFET� Power MOSFET Die in Wafer Form D 40V Size 4.0 RDS(on)=0.0029? G 6" Wafer S Electrical Characteristics (Wafer Form) Parameter Description Guaranteed (Min/Max) Test Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40V Min. VGS = 0V, ID = 250�A RDS(on) Static Drain-to-Source On-Resistance 2.9m? Max. VGS = 10V, ID = 45A VGS(th) Gate Threshold Voltage 2.0V

1.293. irgc10b60kb.pdf Size:15K _international_rectifier

PD - 94409 IRGC10B60KB Die in Wafer Form Features Features Features Features Features 600V C � GEN5 Non Punch Through (NPT) Technology IC(nom)= 10A � Low VCE(on) VCE(on) typ.=1.8V @ � 10�s Short Circuit Capability � Square RBSOA IC(nom) @ 25�C � Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated � Benchmark Efficiency for Motor Co

1.294. irg4bc15md.pdf Size:256K _international_rectifier

PD- 94151A IRG4BC15MD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH Fast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features � Rugged: 10�sec short circuit capable at VGS = 15V VCES = 600V � Low VCE(on) for 4 to 10kHz applications � IGBT co-packaged with ultra-soft-recovery anti-parallel diodes VCE(on) typ. = 1.88V G � Industry standard

1.295. irg4rc10sd.pdf Size:189K _international_rectifier

2, ' $%&) IRG4RC10SD Standard Speed CoPack INSULATED GATE BIPOLAR TRANSISTOR WITH IGBT ULTRAFAST SOFT RECOVERY DIODE C Features � Extremely low voltage drop 1.1V(typ) @ 2A VCES = 600V � S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 VCE(on) typ. = 1.10V KHz in brushless DC drives. G � Tight parameter distribution � IGBT co-packaged

1.296. irg4rc10k.pdf Size:134K _international_rectifier

PD 91735A IRG4RC10K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features C � Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit VCES = 600V Rated to 10�s @ 125�C, VGE = 15V � Generation 4 IGBT design provides higher efficiency VCE(on) typ. = 2.39V G than Generation 3 � Industry standard TO-252AA package @V

1.297. irg4rc10kd.pdf Size:190K _international_rectifier

PD 91736A IRG4RC10KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT C Features � Short Circuit Rated UltraFast: Optimized for VCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10�s @ 125�C, VGE = 15V VCE(on) typ. = 2.39V � Generation 4 IGBT design provides tighter G parameter distribution and hig

1.298. irgc100b120k.pdf Size:15K _international_rectifier

PD - 93874 IRGC100B120KB Die in Wafer Form Features Features Features Features Features 1200V C � GEN5 Non Punch Through (NPT) Technology IC(nom)= 100A � Low VCE(on) VCE(on) typ.= 2.2V @ � 10�s Short Circuit Capability � Square RBSOA IC(nom) @ 25�C � Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated � Benchmark Efficiency for Mot

1.299. irg4bc10ud.pdf Size:184K _international_rectifier

PD 91677B IRG4BC10UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Features Features Features Features � UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in VCE(on) typ. = 2.15V resonant mode G � Generation 4 IGBT design provides tighter @VGE = 15V, IC = 5.0A parameter distrib

1.300. irgc15b60kb.pdf Size:15K _international_rectifier

PD - 94410 IRGC15B60KB Die in Wafer Form Features Features Features Features Features 600V C � GEN5 Non Punch Through (NPT) Technology IC(nom)= 15A � Low VCE(on) VCE(on) typ.=1.8V @ � 10�s Short Circuit Capability � Square RBSOA IC(nom) @ 25�C � Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated � Benchmark Efficiency for Motor Co

1.301. irg4cc10ub.pdf Size:41K _international_rectifier

PD- 91826 IRG4CC10UB IRG4CC10UB IGBT Die in Wafer Form C 600 V Size 1 Ultra-Fast Speed G 6" Wafer E Electrical Characteristics ( Wafer Form ) Parameter Description Guaranteed (Min/Max) Test Conditions VCE (on) Collector-to-Emitter Saturation Voltage 4.5V Max. IC = 1.5A, TJ = 25�C, VGE = 15V V(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25�C, ICES = 250�A, VGE = 0V VGE

1.302. irg4bc15ud-s.pdf Size:210K _international_rectifier

PD - 94083A IRG4BC15UD-S IRG4BC15UD-L INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V � UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching VCE(on) typ. = 2.02V � IGBT Co-packaged with ultra-soft-recovery G antiparallel diode � Industry standard D2Pak & TO-262 packages @VGE = 15V, IC = 7.8

1.303. irg4rc10ud.pdf Size:191K _international_rectifier

PD 91571A I UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Features Features Features Features � UltraFast: Optimized for medium operating VCES = 600V frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode). VCE(on) typ. = 2.15V � Generation 4 IGBT design provides tighter parameter distribution and high

1.304. irg4bc10s.pdf Size:157K _international_rectifier

PD - 91786A IRG4BC10S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C � Extremely low voltage drop; 1.1V typical at 2A � S-Speed: Minimizes power dissipation at up to 3 VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives, up to 2KHz in VCE(on) typ. = 1.10V G Chopper Applications � Very Tight Vce(on) distribution � Industry standar

1.305. irg4bc10kd.pdf Size:210K _international_rectifier

PD -91734B IRG4BC10KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT C Features � High short circuit rating optimized for motor control, VCES = 600V tsc =10�s, @360V VCE (start), TJ = 125�C, VGE = 15V VCE(on) typ. = 2.39V � Combines low conduction losses with high G switching speed � Tighter parameter distribution and hig

1.306. irgc100b120u.pdf Size:15K _international_rectifier

PD - 93873 IRGC100B120UB Die in Wafer Form Features Features Features Features Features 1200V C � GEN5 Non Punch Through (NPT) Technology IC(nom)= 100A � Low VCE(on) VCE(on) typ.= 3.1V @ � 10�s Short Circuit Capability � Square RBSOA IC(nom) @ 25�C � Positive VCE(on) Temperature Coefficient UltraFast IGBT G Benefits Short Circuit Rated � Benchmark Efficiency for Motor C

1.307. irg4rc10u.pdf Size:131K _international_rectifier

PD - 91572A IRG4RC10U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features � UltraFast: Optimized for high operating VCES = 600V frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode) � Generation 4 IGBT design provides tighter VCE(on) typ. = 2.15V G parameter distribution and higher efficiency than previous genera

1.308. irg4bc10sd-s.pdf Size:217K _international_rectifier

PD - 94255 IRG4BC10SD-S IRG4BC10SD-L INSULATED GATE BIPOLAR TRANSISTOR WITH Standard Speed ULTRAFAST SOFT RECOVERY DIODE CoPack IGBT Features C � Extremely low voltage drop 1.1Vtyp. @ 2A � S-Series: Minimizes power dissipation at up to 3 VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. VCE(on) typ. = 1.10V � Very Tight Vce(on) distribution G

1.309. irg4rc10s.pdf Size:120K _international_rectifier

PD - 91732A IRG4RC10S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C � Extremely low voltage drop; 1.0V typical at 2A, 100�C VCES = 600V � Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) � Generation 4 IGBT design provides tighter VCE(on) typ. = 1.10V G parameter distribution and higher efficiency than previous generati

1.310. irgc100b120kb.pdf Size:43K _international_rectifier

1.311. irgc14c40lb.pdf Size:17K _international_rectifier

PD - 94060 IRGC14C40LB Ignition IGBT IRGC14C40LC IRGC14C40LD Die in Wafer Form IGBT with on-chip Gate-Emitter and Gate-Collector clamps Features NOTES: 1) Part number IRGC14C40LB are die in wafer form probed and uncut; IRGC14C40LC are die on film probed and �Most Rugged in Industry cut; and IRGC14C40LD are probed die in wafle pack. 2) Refer- �Logic-Level Gate Drive ence packaged parts

1.312. irgc15b120kb.pdf Size:26K _international_rectifier

PD - 93866A IRGC15B120KB Die in Wafer Form Features Features Features Features Features 1200V C � GEN5 Non Punch Through (NPT) Technology IC(nom)=15A � Low VCE(on) VCE(on) typ.=2.46V @ � 10�s Short Circuit Capability � Square RBSOA IC(nom) @ 25�C � Positive VCE(on) Temperature Coefficient Motor Control IGBT G Benefits Short Circuit Rated � Benchmark Efficiency for Motor

1.313. irg4bc15ud.pdf Size:255K _international_rectifier

PD - 94082A IRG4BC15UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 600V � UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching VCE(on) typ. = 2.02V � IGBT Co-packaged with ultra-soft-recovery G antiparallel diode � Industry standard TO-220AB package @VGE = 15V, IC = 7.8A E n-channel Benefi

1.314. irgc15b120ub.pdf Size:28K _international_rectifier

PD - 93865A IRGC15B120UB Die in Wafer Form Features Features Features Features Features 1200V C � GEN5 Non Punch Through (NPT) Technology IC(nom)=15A � UltraFast VCE(on) typ.=3.67V @ � 10�s Short Circuit Capability � Square RBSOA IC(nom) @ 25�C � Positive VCE(on) Temperature Coefficient UltraFast IGBT G Benefits Short Circuit Rated � Benchmark Efficiency above 20KHz E

1.315. irg4cc10kb.pdf Size:41K _international_rectifier

PD- 91825 IRG4CC10KB IRG4CC10KB IGBT Die in Wafer Form C 600 V Size 1 Ultra-Fast Speed G Short Circuit Rated 6" Wafer E Electrical Characteristics ( Wafer Form ) Parameter Description Guaranteed (Min/Max) Test Conditions VCE (on) Collector-to-Emitter Saturation Voltage 4.5V Max. IC = 1.5A, TJ = 25�C, VGE = 15V V(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25�C, ICES =

1.316. irg4bc10sd.pdf Size:210K _international_rectifier

D IRG4BC10SD Standard Speed CoPack INSULATED GATE BIPOLAR TRANSISTOR WITH IGBT ULTRAFAST SOFT RECOVERY DIODE C Features � Extremely low voltage drop 1.1Vtyp. @ 2A VCES = 600V � S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. VCE(on) typ. = 1.10V � Very Tight Vce(on) distribution G � IGBT co-packag

1.317. irgc100b120ub.pdf Size:43K _international_rectifier

1.318. 2sc1845.pdf Size:188K _nec

1.319. 2sc1505_2sc1506_2sc1507.pdf Size:123K _nec

1.320. 2sc1070b.pdf Size:24K _nec

1.321. 2sc1505.pdf Size:52K _nec

??????? ??????????????? Silicon Power Transistor 2SC1505 NPN ???????????????? ?????????????,????? ?2SC1505 ?,?????????????????,???? ? ????? ?????????,????(1.5 W)?????? ????? ????? 2SC1505 TO-220AB ???? 0 ???????VCBO = 300 V (TO-220AB) 0 ???????????Cob = 4.5 pF MAX. � ??????(TA = 25� C) � � ??? ?? ??? ?? ?? ???? � ?????? VCBO 300 V ???? � ??????? VCEO 300 V ???? � ?????? VEB

1.322. 2sc1927.pdf Size:36K _nec

DATA SHEET SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SC1927 is an NPN silicon epitaxial dual transistor that (in millimeters) +0.3 consists of two chips equivalent to the 2SC1275, and is designed for 5.0 MIN. 3.5 �0.2 5.0 MIN. differential amplifier and ult

1.323. 2sc1675.pdf Size:42K _nec

1.324. 2sc1009a.pdf Size:325K _nec

1.325. 2sc1941.pdf Size:168K _nec

1.326. 2sc1520_2sc1521.pdf Size:50K _nec

1.327. 2sc1940.pdf Size:169K _nec

1.328. 2sc1844.pdf Size:225K _nec

1.329. 2sc1841.pdf Size:122K _nec

1.330. 2sc1843.pdf Size:223K _nec

1.331. 2sc1674.pdf Size:298K _nec

1.332. 2sc1622a.pdf Size:234K _nec

1.333. 2sc1621.pdf Size:229K _nec

1.334. 2sc1842.pdf Size:213K _nec

1.335. 2sc1070.pdf Size:24K _nec

1.336. 2sc1623.pdf Size:60K _nec

DATA SHEET SILICON TRANSISTOR 2SC1623 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS � High DC Current Gain: hFE = 200 TYP. in millimeters (VCE = 6.0 V, IC = 1.0 mA) 2.8 � 0.2 � High Voltage: VCEO = 50 V 1.5 0.65+0.1 �0.15 ABSOLUTE MAXIMUM RATINGS Maximum Voltages and Current (TA = 25 ?C) 2 Collector to Base Voltag

1.337. 2sc1653_2sc1654.pdf Size:163K _nec

1.338. ksc1983.pdf Size:66K _samsung

KSC1983 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER TRANSISTOR TO-220 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 6 V Collector Current IC 3 A Base Current IB 1 A Collector Dissipation ( TC=25 ) PC 30 W Junction Temperature TJ 150 1.Base 2.Collector 3.Emitter Storage

1.339. ksc1730.pdf Size:91K _samsung

1.340. bc121_bc122_bc123.pdf Size:218K _siemens

1.341. bc177_bc178_bc179.pdf Size:269K _siemens

1.342. ac127.pdf Size:181K _siemens

AC 127 npn-Transistor legierter npn-Germanium- Transistor Der Transistor AC 127 ist fur die Verwendung als NF-Verstarker geeignet. Die Anschlusse sind vom Gehause elektrisch isoliert

1.343. ac121_ac152.pdf Size:190K _siemens

1.344. ac151.pdf Size:207K _siemens

1.345. dtc124xe.pdf Size:626K _rohm

DTC124X series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline VMT3 EMT3 Parameter Value OUT OUT VCC 50V IN IN IC(MAX.) 100mA GND GND R1 22kW DTC124XM DTC124XE R2 (SC-105AA) 47kW SOT-416 (SC-75A) UMT3 SMT3 OUT lFeatures OUT 1) Built-In Biasing Resistors IN IN 2) Built-in bias resistors enable the configuration of

1.346. dtc115th-tua-tka_09_sot416_323_346.pdf Size:61K _rohm

DTC115TH / DTC115TUA / DTC115TKA / DTC115TSA Transistors Digital transistors (built in resistor) DTC115TH / DTC115TUA / DT115TKA / DTC115TSA External dimensions (Units : mm) Features 1) Built-in bias resistors enable the configuration of an DTC115TH 1.6 inverter circuit without connecting external input 0.85 (1) resistors. (2) (3) 2) The bias resistors consist of thin-film resis

1.347. dtc144vua-vka.pdf Size:64K _rohm

DTC144VUA / DTC144VKA Transistors 100mA / 50V Digital transistor (with built-in resistors) DTC144VUA / DTC144VKA Applications External dimensions (Unit : mm) Inverter, Interface, Driver DTC144VUA 2.0 0.9 0.3 0.2 0.7 (3) Features 1) Built-in bias resistors enable the configuration of (2) (1) an inverter circuit without connecting external 0.65 0.65 input resistors. (1)

1.348. dtc114yeb.pdf Size:152K _rohm

100mA / 50V Digital transistors (with built-in resistors) DTC114YEB Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3F 1.6 0.7 0.26 Features (3) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors (1) (2) 0.13

1.349. dtc143t.pdf Size:741K _rohm

DTC143T series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline VMT3 EMT3F Parameter Value Collector Collector VCEO 50V Base Base IC 100mA Emitter Emitter R1 4.7kW DTC143TM DTC143TEB (SC-105AA) (SC-89) EMT3 UMT3F Collector Collector lFeatures Base Base 1) Built-In Biasing Resistors Emitter Emitter 2) Built-in bias

1.350. 2sc1809.pdf Size:86K _rohm

1.351. dtc115gua.pdf Size:558K _rohm

DTC115G series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline UMT3 SMT3 Parameter Value Collector Collector VCEO 50V Base Base IC 100mA Emitter Emitter R 100kW DTC115GKA DTC115GUA SOT-346 (SC-59) SOT-323 (SC-70) lFeatures lInner circuit 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of

1.352. 2sc1545m.pdf Size:99K _rohm

1.353. dtc144ee.pdf Size:153K _rohm

100mA / 50V Digital transistors (with built-in resistors) DTC144EM / DTC144EE / DTC144EUA / DTC144EKA ?Applications Inverter, Interface, Driver ?Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow

1.354. dtc124x-series.pdf Size:141K _rohm

100mA / 50V Digital transistors (with built-in resistors) DTC124XM / DTC124XE / DTC124XUA / DTC124XKA ? Applications Inverter, Interface, Driver ? Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation to allo

1.355. umc1n.pdf Size:41K _rohm

UMC1N / FMC1A Transistors Transistors UMD12N / FMC7A (94S-815-AC143T) (96-475-AC144E) 592

1.356. dtc123tka_02_sot346.pdf Size:44K _rohm

(SPEC-A

1.357. umc1n_fmc1a_c1_sot353_sot23-5.pdf Size:40K _rohm

UMC1N / FMC Transistors Transistors UMD12N / FMC

1.358. dtc144eeb.pdf Size:59K _rohm

Transistors DTC144EEB 100mA / 50V Digital transistors (with built-in resistors) DTC144EEB Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3F 1.6 0.7 Features 0.26 1) Built-in bias resistors enable the configuration of (3) an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consis

1.359. dtc123ee-eua-eka_22_sot416_323_346.pdf Size:68K _rohm

Transistors Digital transistors (built-in resistors) DTC123EE / DTC123EUA / DTC123EKA DTC123ESA FFeatures FExternal dimensions (Units: mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow negative biasing

1.360. dtc143zeb.pdf Size:71K _rohm

Transistors DTC143ZEB 100mA / 50V Digital transistors (with built-in resistors) DTC143ZEB Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3F 1.6 0.7 Features 0.26 1) Built-in bias resistors enable the configuration of (3) an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film

1.361. dtc114ye.pdf Size:140K _rohm

100mA / 50V Digital transistors (with built-in resistors) DTC114YM / DTC114YE / DTC114YUA / DTC114YKA ? Applications Inverter, Interface, Driver ? Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation to allo

1.362. dtc144e-series.pdf Size:162K _rohm

100mA / 50V Digital transistors (with built-in resistors) DTC144EB / DTC144EM / DTC144EE / DTC144EUA / DTC144EKA Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolati

1.363. dtc123jub.pdf Size:73K _rohm

Transistors DTC123JUB 100mA / 50V Digital transistors (with built-in resistors) DTC123JUB Applications Dimensions (Unit : mm) Inverter, Interface, Driver UMT3F 2.0 Features 0.9 0.32 1) Built-in bias resistors enable the configuration of (3) an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film

1.364. dtc115em.pdf Size:181K _rohm

100mA / 50V Digital transistors (with built-in resistors) DTC115EM / DTC115EE / DTC115EUA / DTC115EKA Applications Inner circuit Inverter, Interface, Driver R1 OUT IN R2 Features GND 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). IN OUT 2) The bias resistors consist of thin

1.365. dtc144w-series.pdf Size:140K _rohm

100mA / 50V Digital transistors (with built-in resistors) DTC144WE / DTC144WUA / DTC144WKA ? Applications ? Dimensions (Unit : mm) Inverter, Interface, Driver EMT3 (SC-75A) 1.6 0.7 0.55 0.3 ? Features 1)Built-in bias resistors enable the configuration of an inverter ( ) 3 circuit without connecting external input resistors. 2)The bias resistors consist of thin-fil

1.366. dta113tka_dtc123tka.pdf Size:44K _rohm

DTA113TKA Transistors Transistors DTC123TKA (SPEC-A113T) (SPEC-C123T) 467

1.367. dtc124eub.pdf Size:82K _rohm

Transistors DTC124EUB 100mA / 50V Digital transistors (with built-in resistors) DTC124EUB Applications Dimensions (Unit : mm) Inverter, Interface, Driver UMT3F 2.0 Features 0.9 0.32 1) Built-in bias resistors enable the configuration of (3) an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-fil

1.368. dtc125tua-tka_0a_sot323_346.pdf Size:57K _rohm

DTC125TUA / DTC125TKA / DTC125TSA Transistors Digital transistor (built-in resistor) DTC125TUA / DTC125TKA / DTC125TSA Features External dimensions (Units : mm) 1) Built-in bias resistors enable the configuration of an DTC125TUA inverter circuit without connecting external input resistors. 1.25 2) The bias resistors consist of thin-film resistors with 2.1 complete isolation to allow n

1.369. dtc143xxx_43_sot416_323_346.pdf Size:69K _rohm

Transistors Digital transistors (built-in resistors) DTC143XE / DTC143XUA / DTC143XKA DTC143XSA FFeatures FExternal dimensions (Units: mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow negative biasing

1.370. dtc124e-series.pdf Size:140K _rohm

100mA / 50V Digital transistors (with built-in resistors) DTC124EM / DTC124EE / DTC124EUA / DTC124EKA ? Applications ? Dimensions (Unit : mm) Inverter, Interface, Driver DTC124EM 1.2 0.32 ? Features (3) 1)Built-in bias resistors enable the configuration of an inverter (1)(2) circuit without connecting external input resistors (see the 0.22 0.13 equivalent circuit). 0.4 0.4

1.371. dtc125tua.pdf Size:493K _rohm

DTC125T series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline UMT3 SMT3 Parameter Value Collector Collector VCEO 50V Base Base IC 100mA Emitter Emitter R1 200kW DTC125TUA DTC125TKA SOT-323 (SC-70) SOT-346 (SC-59) lFeatures lInner circuit 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inve

1.372. dtc144ge.pdf Size:134K _rohm

100mA / 50V Digital transistors (with built-in resistors) DTC144GE / DTC144GUA / DTC144GKA ? Applications ? Dimensions (Unit : mm) Inverter, Interface, Driver EMT3 (SC-75A) 1.6 0.7 0.55 0.3 ? Features ( ) 3 1)The built-in bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input, and parasitic effects ( ) ( ) 2 1

1.373. dtc114ee.pdf Size:152K _rohm

100mA / 50V Digital transistors (with built-in resistors) DTC114EM / DTC114EE / DTC114EUA / DTC114EKA ?Applications Inverter, Interface, Driver ?Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow

1.374. 2sc1652.pdf Size:311K _rohm

1.375. 2sc1645.pdf Size:99K _rohm

1.376. 2sc1741.pdf Size:74K _rohm

2SC2411K / 2SC4097 / 2SC1741S Transistors Medium Power Transistor (32V, 0.5A) 2SC2411K / 2SC4097 / 2SC1741S Features External dimensions (Units : mm) 1) High ICMax. 2SC2411K 2SC4097 ICMax. = 0.5mA 2.9�0.2 2) Low VCE(sat). 1.1+0.2 2.0�0.2 1.9�0.2 -0.1 1.3�0.1 0.9�0.1 0.8�0.1 0.95 0.95 Optimal for low voltage operation. 0.65 0.65 0.7�0.1 0.2 (1) (2) (1) (2) 3) Complements the 0

1.377. dtc144ge-gua-gka_k26_sot416_323_346.pdf Size:44K _rohm

(94S-570-A144G

1.378. dtc115ee-eua-eka-esa_29_sot346-323-416.pdf Size:45K _rohm

(94S-522-A115E)

1.379. dtc143z-series.pdf Size:141K _rohm

100mA / 50V Digital transistors (with built-in resistors) DTC143ZM / DTC143ZE / DTC143ZUA / DTC143ZKA ? Applications Inverter, Interface, Driver ? Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation to allo

1.380. dtc143te-tua-tka_03_sot416_323_346.pdf Size:57K _rohm

Transistors Digital transistors (built-in resistor) DTC143TE / DTC143TUA / DTC143TKA DTC143TSA FFeatures FExternal dimensions (Units: mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow negative biasing

1.381. 2sc1741as.pdf Size:35K _rohm

2SD1949 / 2SD1484K / 2SC1741S Transistors Transistors 2SC3359S (96-678-D15) (SPEC-D16) 318

1.382. dtc114ye-yua-yka_64_sot416_323_346.pdf Size:69K _rohm

Transistors Digital transistors (built-in resistors) DTC114YE / DTC114YUA / DTC114YKA DTC114YSA FFeatures FExternal dimensions (Units: mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow negative biasing

1.383. dtc114eeb.pdf Size:82K _rohm

Transistors DTC114EEB 100mA / 50V Digital transistors (with built-in resistors) DTC114EEB Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3F 1.6 0.7 Features 0.26 1) Built-in bias resistors enable the configuration of (3) an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film

1.384. dtc144vua.pdf Size:64K _rohm

1.385. dtc114yub.pdf Size:82K _rohm

Transistors DTC114YUB 100mA / 50V Digital transistors (with built-in resistors) DTC114YUB Applications Dimensions (Unit : mm) Inverter, Interface, Driver UMT3F 2.0 Features 0.9 0.32 1) Built-in bias resistors enable the configuration of (3) an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film

1.386. dtc114te.pdf Size:58K _rohm

Transistors Digital transistors (built in resistor) DTC114TE / DTC114TUA / DTC114TKA DTC114TCA / DTC114TSA FFeatures FExternal dimensions (Units: mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow negat

1.387. dtc143eub.pdf Size:82K _rohm

Transistors DTC143EUB 100mA / 50V Digital transistors (with built-in resistors) DTC143EUB Applications Dimensions (Unit : mm) Inverter, Interface, Driver UMT3F 2.0 Features 0.9 0.32 1) Built-in bias resistors enable the configuration of (3) an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-fil

1.388. dtc114e-series.pdf Size:161K _rohm

100mA / 50V Digital transistors (with built-in resistors) DTC114EB / DTC114EM / DTC114EE / DTC114EUA / DTC114EKA Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolati

1.389. dtc144we.pdf Size:581K _rohm

DTC144W series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline EMT3 UMT3 Parameter Value OUT OUT VCC 50V IN IN IC(MAX.) 100mA GND GND R1 47kW DTC144WE DTC144WUA R2 SOT-416 (SC-75A) 22kW SOT-323 (SC-70) SMT3 lFeatures OUT 1) Built-In Biasing Resistors IN 2) Built-in bias resistors enable the configuration of GND an

1.390. dtc114gua-gka-gsa_k24_sot323_346.pdf Size:47K _rohm

(94S-510-A114G

1.391. dtc144ex_06sot416_323_346.pdf Size:61K _rohm

1.392. dtc124xe-xua-xka_45_sot416_323_346.pdf Size:69K _rohm

Transistors Digital transistors (built-in resistors) DTC124XE / DTC124XUA / DTC124XKA DTC124XSA FFeatures FExternal dimensions (Units: mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow negative biasing

1.393. dtc123e-series.pdf Size:162K _rohm

100mA / 50V Digital transistors (with built-in resistors) DTC123EM / DTC123EE / DTC123EUA / DTC123EKA Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to a

1.394. dtc115te.pdf Size:560K _rohm

DTC115T series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline VMT3 EMT3 Parameter Value Collector Collector VCEO 50V Base Base IC 100mA Emitter Emitter R1 100kW DTC115TM DTC115TE (SC-105AA) SOT-416 (SC-75A) UMT3 SMT3 Collector Collector lFeatures Base Base 1) Built-In Biasing Resistors Emitter Emitter 2) Bu

1.395. dtc115gua-gka.pdf Size:62K _rohm

DTC115GUA / DTC115GKA Transistors 100mA / 50V Digital transistors (with built-in resistor) DTC115GUA / DTC115GKA Applications External dimensions (Unit : mm) Inverter, Interface, Driver DTC115GUA 2.0 0.9 0.3 0.2 0.7 Features 1) The built-in bias resistors consist of thin-film (3) resistors with complete isolation to allow negative biasing of the input, and parasitic effect

1.396. dtc143eeb.pdf Size:59K _rohm

Transistors DTC143EEB 100mA / 50V Digital transistors (with built-in resistors) DTC143EEB Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3F 1.6 0.7 Features 0.26 1) Built-in bias resistors enable the configuration of (3) an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consis

1.397. dtc124exx_25_sot416_323_346_23.pdf Size:70K _rohm

Transistors Digital transistors (built-in resistors) DTC124EE / DTC124EUA / DTC124EKA DTC124ECA / DTC124ESA FFeatures FExternal dimensions (Units: mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow nega

1.398. dtc124gua.pdf Size:497K _rohm

DTC124G series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline UMT3 SMT3 Parameter Value Collector Collector VCEO 50V Base Base IC 100mA Emitter Emitter R 22kW DTC124GKA DTC124GUA SOT-346 (SC-59) SOT-323 (SC-70) lFeatures lInner circuit 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of

1.399. 2sb852k_2sa830s_2sd1383k_2sc1645s.pdf Size:52K _rohm

2SB852K / 2SA830S Transistors Transistors 2SD1383K / 2SC1645S (96-118-B20) (96-205-D20) 280 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are

1.400. dtc123ye.pdf Size:581K _rohm

DTC123Y series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline EMT3 UMT3 Parameter Value OUT OUT VCC 50V IN IN IC(MAX.) 100mA GND GND R1 2.2kW DTC123YE DTC123YUA R2 SOT-416 (SC-75A) 10kW SOT-323 (SC-70) SMT3 lFeatures OUT 1) Built-In Biasing Resistors IN 2) Built-in bias resistors enable the configuration of GND a

1.401. dtc114gua.pdf Size:495K _rohm

DTC114G series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline UMT3 SMT3 Parameter Value Collector Collector VCEO 50V Base Base IC 100mA Emitter Emitter R 10kW DTC114GKA DTC114GUA SOT-346 (SC-59) SOT-323 (SC-70) lFeatures lInner circuit 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of

1.402. dtc143x-ser.pdf Size:141K _rohm

100mA / 50V Digital transistors (with built-in resistors) DTC143XM / DTC143XE / DTC143XUA / DTC143XKA ? Applications Inverter, Interface, Driver ? Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation to a

1.403. 2sc2412k_2sc4081_2sc4617_2sc5658_2sc1740s.pdf Size:171K _rohm

General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S ?Features ?Dimensions (Unit : mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC4081 2SC4617 2. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. (1) (2) (3) 1.25 1.6 0.8 2.1 2.8 1.6 ?Structure Epitaxial planar type 0.1Min. 0.1Min. 0.3Min. NPN silicon t

1.404. dtc114t-x.pdf Size:78K _rohm

100mA / 50V Digital transistors (with built-in resistors) DTC114TM / DTC114TE / DTC114TUA / DTC114TKA Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to al

1.405. dtc124eeb.pdf Size:152K _rohm

100mA / 50V Digital transistors (with built-in resistors) DTC124EEB Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3F 1.6 0.7 Features 0.26 1) Built-in bias resistors enable the configuration of (3) an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors (1) (2) wi

1.406. 2sc1615.pdf Size:207K _rohm

1.407. dtc123je-jua-jka_e42_sot416_323_346.pdf Size:76K _rohm

DTC123JE / DTC123JUA / DTC123JKA / DTC123JSA Transistor Digital transistors (built-in resistors) DTC123JE / DTC123JUA / DTC123JKA / DTC123JSA Features External dimensions (Units : mm) 1) Built-in bias resistors enable the 1.6�0.2 DTC123JE configuration of an inverter circuit 1.0�0.1 without connecting external input 0.7�0.1 0.5 0.5 +0.1 +0.1 0.2-0.05 0.2-0.05 0.55�0.1 resistors (se

1.408. dtc123tka.pdf Size:454K _rohm

DTC123TKA Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline SMT3 Parameter Value Collector VCEO 50V Base IC 100mA Emitter R1 2.2kW DTC123TKA SOT-346 (SC-59) lFeatures lInner circuit 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors

1.409. dtc143zxx_e23_sot416_323_346_23.pdf Size:71K _rohm

Transistors Digital transistors (built-in resistors) DTC143ZE / DTC143ZUA / DTC143ZKA DTC143ZCA / DTC143ZSA FFeatures FExternal dimensions (Units: mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow nega

1.410. dtc115t-series.pdf Size:136K _rohm

100mA / 50V Digital transistors (with built-in resistors) DTC115TM / DTC115TE / DTC115TUA / DTC115TKA ? Applications ? Dimensions (Unit : mm) Inverter, Interface, Driver DTC115TM 1.2 0.32 ? Features (3) 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input (1)(2) 0.22 0.13 resistors. 0.4 0.4 0.5 2)The bias resistors c

1.411. dtc115eeb.pdf Size:180K _rohm

100mA / 50V Digital transistors (with built-in resistors) DTC115EEB Applications Dimensions (Unit : mm) EMT3F Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of (3) an inverter circuit without connecting external input resistors (see equivalent circuit). 2) Each bias resistor is a thin-film resistor. Since they are completely insulat

1.412. dtc143ee-eua-eka_23_sot416_323_346.pdf Size:68K _rohm

Transistors Digital transistors (built-in resistors) DTC143EE / DTC143EUA / DTC143EKA DTC143ESA FFeatures FExternal dimensions (Units: mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow negative biasing

1.413. dtc143xe.pdf Size:141K _rohm

1.414. dtc123jeb.pdf Size:152K _rohm

100mA / 50V Digital transistors (with built-in resistors) DTC123JEB Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3F 1.6 0.7 0.26 Features 1) Built-in bias resistors enable the configuration of (3) an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors (1) (2) wi

1.415. dtc113zua.pdf Size:536K _rohm

DTC113Z series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline UMT3 SMT3 Parameter Value OUT OUT VCC 50V IN IN IC(MAX.) 100mA GND GND R1 1kW DTC113ZUA DTC113ZKA R2 10kW SOT-323 (SC-70) SOT-346 (SC-59) lFeatures lInner circuit 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter c

1.416. dtc113zua-zka_121_z21_sot323_346.pdf Size:66K _rohm

Transistors Digital transistors (built-in resistors) DTC113ZUA / DTC113ZKA / DTC113ZSA FFeatures FExternal dimensions (Units: mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) Each bias resistor is a thin-film re- sistor. Since they are completely in- sulated, the input can be negatively

1.417. dtc123je.pdf Size:140K _rohm

100mA / 50V Digital transistors (with built-in resistors) DTC123JM / DTC123JE / DTC123JUA / DTC123JKA ? Applications Inverter, Interface, Driver ? Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation to a

1.418. dtc144t-series.pdf Size:139K _rohm

100mA / 50V Digital transistors (with built-in resistor) DTC144TM / DTC144TE / DTC144TUA / DTC144TKA ? Applications Inverter, Interface, Driver ? Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation to allow

1.419. dtc144eub.pdf Size:78K _rohm

Transistors DTC144EUB 100mA / 50V Digital transistors (with built-in resistors) DTC144EUB Applications Dimensions (Unit : mm) Inverter, Interface, Driver UMT3F 2.0 Features 0.9 0.32 1) Built-in bias resistors enable the configuration of (3) an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-fil

1.420. dtc144we-wua-wka_86_sot416_323_346.pdf Size:45K _rohm

(94S-579-144W

1.421. dtc143e-series.pdf Size:141K _rohm

100mA / 50V Digital transistors (with built-in resistors) DTC143EM / DTC143EE / DTC143EUA / DTC143EKA ? Applications Inverter, Interface, Driver ? Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation to allo

1.422. dtc144g.pdf Size:497K _rohm

DTC144G series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline UMT3 SMT3 Parameter Value Collector Collector VCEO 50V Base Base IC 100mA Emitter Emitter R 47kW DTC144GKA DTC144GUA SOT-346 (SC-59) SOT-323 (SC-70) lFeatures lInner circuit 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of

1.423. dtc143zub.pdf Size:78K _rohm

Transistors DTC143ZUB 100mA / 50V Digital transistors (with built-in resistors) DTC143ZUB Applications Dimensions (Unit : mm) Inverter, Interface, Driver UMT3F 2.0 Features 0.9 0.32 1) Built-in bias resistors enable the configuration of (3) an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-fil

1.424. dtc144ee-eua-eka_26_sot416_323_346.pdf Size:69K _rohm

Transistors Digital transistors (built-in resistors) DTC144EE / DTC144EUA / DTC144EKA DTC144ESA FFeatures FExternal dimensions (Units: mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow negative biasing

1.425. dtc123j-series.pdf Size:140K _rohm

1.426. dtc114te-tua-tka-tca_04_sot416_323_346_23.pdf Size:58K _rohm

1.427. 2sa821s_2sc1651s.pdf Size:34K _rohm

2SA821S Transistors Transistors 2SC1651S (94L-183-A35) (94L-519-C35) 274

1.428. dtc123y-ser.pdf Size:139K _rohm

100mA / 50V Digital transistors (with built-in resistors) DTC123YE / DTC123YUA / DTC123YKA ? Applications ? Dimensions (Unit : mm) Inverter, Interface, Driver DTC123YE 1.6 0.7 0.55 0.3 ? Features ( ) 1)Built-in bias resistors enable the configuration of an 3 inverter circuit without connecting external input ( ) ( ) 2 1 resistors (see equivalent circuit). 0.2 0.2 2)The b

1.429. dtc114w-ser.pdf Size:141K _rohm

100mA / 50V Digital transistors (with built-in resistors) DTC114WE / DTC114WUA / DTC114WKA ? Applications ? Dimensions (Unit : mm) Inverter, Interface, Driver EMT3 (SC-75A) 1.6 0.7 0.55 0.3 ? Features 1)Built-in bias resistors enable the configuration of an inverter ( ) 3 circuit without connecting external input resistors. 2)The bias resistors consist of thin-fi

1.430. dtc144te.pdf Size:582K _rohm

DTC144T series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline VMT3 EMT3 Parameter Value Collector Collector VCEO 50V Base Base IC 100mA Emitter Emitter R1 47kW DTC144TM DTC144TE (SC-105AA) SOT-416 (SC-75A) UMT3 SMT3 Collector Collector lFeatures Base Base 1) Built-In Biasing Resistors Emitter Emitter 2) Bui

1.431. dtc114ee-eua-eka-eca_24_sot416_323_346_23.pdf Size:71K _rohm

Transistors Digital transistors (built-in resistors) DTC114EE / DTC114EUA / DTC114EKA DTC114ECA / DTC114ESA FFeatures FExternal dimensions (Units: mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow nega

1.432. dtc123ee.pdf Size:685K _rohm

DTC123E series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline VMT3 EMT3 Parameter Value OUT OUT VCC 50V IN IN IC(MAX.) GND 100mA GND R1 2.2kW DTC123EM DTC123EE R2 (SC-105AA) SOT-416 (SC-75A) 2.2kW UMT3 SMT3 OUT OUT lFeatures IN 1) Built-In Biasing Resistors, R1 = R2 = 2.2kW. IN GND GND 2) Built-in bias resisto

1.433. dtc144te-tua-tka_06_sot416_323_346.pdf Size:56K _rohm

Transistors Digital transistors (built in resistor) DTC144TE / DTC144TUA / DTC144TKA DTC144TSA FFeatures FExternal dimensions (Units: mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow negative biasing

1.434. dtc124t-series.pdf Size:138K _rohm

100mA / 50V Digital transistors (with built-in resistor) DTC124TM / DTC124TE / DTC124TUA / DTC124TKA ? Applications Inverter, Interface, Driver ? Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation to allow

1.435. dtc124te-tua-tka_05_sot416_323_346.pdf Size:57K _rohm

Transistors Digital transistors (built-in resistor) DTC124TE / DTC124TUA / DTC124TKA DTC124TSA FFeatures FExternal dimensions (Units: mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow negative biasing

1.436. dtc124gua-gka.pdf Size:135K _rohm

100mA / 50V Digital transistors (with built-in resistors) DTC124GUA / DTC124GKA ? Applications ? Dimensions (Unit : mm) Inverter, Interface, Driver DTC124GUA 2.0 0.9 0.3 0.2 0.7 ? Features (3) 1)The built-in bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated. (2)

1.437. dtc123ye-yua-yka_62_sot416_323_346.pdf Size:69K _rohm

Transistors Digital transistors (built-in resistors) DTC123YE / DTC123YUA / DTC123YKA DTC123YSA FFeatures FExternal dimensions (Units: mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow negative biasing

1.438. dtc113zua_dtc113zka.pdf Size:137K _rohm

100mA / 50V Digital transistors (with built-in resistors) DTC113ZUA / DTC113ZKA ? Applications ? Dimensions (Unit : mm) Inverter, Interface, Driver DTC113ZUA 2.0 0.9 ? Features 0.3 0.2 0.7 1)Built-in bias resistors enable the configuration of an (3) inverter circuit without connecting external input resistors (see equivalent circuit). 2)Each bias resistor is a thin-film resis

1.439. dtc143xub.pdf Size:82K _rohm

Transistors DTC143XUB 100mA / 50V Digital transistors (with built-in resistors) DTC143XUB Applications Dimensions (Unit : mm) Inverter, Interface, Driver UMT3F 2.0 Features 0.9 0.32 1) Built-in bias resistors enable the configuration of (3) an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-fil

1.440. dtc124ee.pdf Size:140K _rohm

1.441. dtc144vua-vka_e66_sot323_346.pdf Size:43K _rohm

(94S-576-A144

1.442. dtc124te.pdf Size:582K _rohm

DTC124T series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline VMT3 EMT3 Parameter Value Collector Collector VCEO 50V Base Base IC 100mA Emitter Emitter R1 22kW DTC124TM DTC124TE (SC-105AA) SOT-416 (SC-75A) UMT3 SMT3 Collector Collector lFeatures Base Base 1) Built-In Biasing Resistors Emitter Emitter 2) Bui

1.443. dtc114eub.pdf Size:82K _rohm

Transistors DTC114EUB 100mA / 50V Digital transistors (with built-in resistors) DTC114EUB Applications Dimensions (Unit : mm) Inverter, Interface, Driver UMT3F 2.0 Features 0.9 0.32 1) Built-in bias resistors enable the configuration of (3) an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-fil

1.444. 2sc1741s.pdf Size:70K _rohm

2SC1741S Transistors Medium Power Transistor (32V, 0.5A) 2SC1741S Features External dimensions (Units : mm) 1) High ICMax. 2SC1741S ICMax. = 0.5A 2) Low VCE(sat). 4�0.2 2�0.2 Optimal for low voltage operation. 3) Complements the 2SA1036K / 2SA1577 / 2SA854S. 0.45+0.15 -0.05 Structure Epitaxial planar type 0.45+0.15 2.5+0.4 0.5 -0.05 -0.1 5 NPN silicon transist

1.445. dtc114y-series.pdf Size:140K _rohm

1.446. dtc143xeb.pdf Size:59K _rohm

Transistors DTC143XEB 100mA / 50V Digital transistors (with built-in resistors) DTC143XEB Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3F 1.6 0.7 Features 0.26 1) Built-in bias resistors enable the configuration of (3) an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consis

1.447. dtc124gua-gka_k25_sot323_346.pdf Size:44K _rohm

(94-543-A124G

1.448. dtc114t.pdf Size:741K _rohm

DTC114T series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline VMT3 EMT3F Parameter Value Collector Collector VCEO 50V Base Base IC 100mA Emitter Emitter R1 10kW DTC114TM DTC114TEB (SC-105AA) (SC-89) EMT3 UMT3F Collector Collector lFeatures Base Base 1) Built-In Biasing Resistors Emitter Emitter 2) Built-in bias r

1.449. dtc143ee.pdf Size:141K _rohm

1.450. dtc143ze.pdf Size:141K _rohm

1.451. dtc143te.pdf Size:134K _rohm

100mA / 50V Digital transistors (with built-in resistors) DTC143TM / DTC143TE / DTC143TUA / DTC143TKA ? Applications Inverter, Interface, Driver ? Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation to allow

1.452. dtc114we.pdf Size:141K _rohm

1.453. bc107_bc108_bc109.pdf Size:120K _central

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 � Fax: (631) 435-1824 TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 � Fax: (631) 435-1824 www.centralsemi.com

1.454. ddtc1---e-series2.pdf Size:171K _diodes

DDTC (R1-ONLY SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A � Epitaxial Planar Die Construction SOT-523 � Complementary PNP Types Available (DDTA) C � Built-In Biasing Resistor, R1 only Dim Min Max Typ B C � Lead Free/RoHS Compliant (Note 2) TOP VIEW A 0.15 0.30 0.22 � "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 B E C 1.45 1.75 1.60 Mechani

1.455. ddtc1xxgca.pdf Size:117K _diodes

DDTC (R2-ONLY SERIES) CA NPN PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features � Epitaxial Planar Die Construction � Complementary PNP Types Available (DDTA) A � Built-In Biasing Resistor, R2 only C SOT-23 � Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2 and 3) Dim Min Max TO

1.456. ddc144ns.pdf Size:271K _diodes

DDC144NS DUAL NPN PRE-BIASED TRANSISTOR Please click here to visit our online spice models database. General Descriptions � DDC144NS features discrete dual NPN transistors that can support continuous maximum current up to 100 mA. It is suited for applications where the load needs to be turned on and off using circuits like micro-controllers, comparators, etc., particularly at a poin

1.457. ddc144tu.pdf Size:207K _diodes

DDC144TU DUAL NPN TRANSISTORS WITH 47K OHM BASE RESISTOR Please click here to visit our online spice models database. General Description � DDC144TU is best suited for logic switching applications using control circuits like micro-controllers, comparators, etc. It features two discrete NPN transistors which can support maximum continuous current of 100 mA. NPN transistors can be us

1.458. ddc11--u_ddc12--u_ddc14--u.pdf Size:152K _diodes

DDC (xxxx) U NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features A � Epitaxial Planar Die Construction SOT-363 � Complementary PNP Types Available (DDA) Dim Min Max � Built-In Biasing Resistors A 0.10 0.30 � Lead Free/RoHS Compliant (Note 3) B C B 1.15 1.35 � "Green" Device (Note 4 and 5) NXX YM C 2.00 2.20 D 0.65 Nominal Mechanical Data F 0.30 0.40

1.459. ddtc114elp.pdf Size:167K _diodes

DDTC114ELP PRE-BIASED (R1 = R2) SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR Please click here to visit our online spice models database. Features � Epitaxial Planar Die Construction � Ultra-Small Leadless Surface Mount Package 1 2 3 2 E � Ideally Suited for Automated Assembly Processes 3 � Lead Free By Design/RoHS Compliant (Note 1) C R2 � "Green" Device (Note 2) R1 1 B

1.460. ddc124eu_ddc144eu_ddc114yu_ddc123ju_ddc114eu.pdf Size:150K _diodes

DDC(xxxx)U NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • Epitaxial Planar Die Construction • Case: SOT363 • Complementary PNP Types Available (DDA) • Case material: Molded Plastic. “Green” Molding Compound. • Built-In Biasing Resistors • Classification Rating 94V-0 • “Lead Free”, RoHS Compliant (Note 1) • Moisture Sensitiv

1.461. ddtc1---u-ser.pdf Size:109K _diodes

DDTC (LO-R1) U NPN PRE-BIASED 100 mA SURFACE MOUNT TRANSISTOR Features � Epitaxial Planar Die Construction A � Complementary PNP Types Available (DDTA) SOT-323 � Built-In Biasing Resistors Dim Min Max � Lead Free/RoHS Compliant (Note 2) A 0.25 0.40 � "Green" Device (Note 3 & 4) B C B 1.15 1.35 Mechanical Data C 2.00 2.20 � Case: SOT-323 D 0.65 Nominal G � Case Mate

1.462. ddtc1----gua.pdf Size:126K _diodes

DDTC (R2-ONLY SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features � Epitaxial Planar Die Construction A SOT-323 � Complementary PNP Types Available (DDTA) C Dim Min Max � Built-In Biasing Resistor, R2 only A 0.25 0.40 � Lead Free/RoHS Compliant (Note 2) B C � "Green" Device (Note 3 and 4) B 1.15 1.35 C 2.00 2.20 Mechanical Data B E G D 0.65 Nomina

1.463. ddtc1----ua.pdf Size:141K _diodes

DDTC (R1?R2 SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features � Epitaxial Planar Die Construction SOT-323 A � Complementary PNP Types Available (DDTA) Dim Min Max � Built-In Biasing Resistors, R1?R2 A 0.25 0.40 � Lead Free/RoHS Compliant (Note 1) B 1.15 1.35 B C � "Green" Device (Note 2 & 3) C 2.00 2.20 Mechanical Data D 0.65 Nominal G E 0.30

1.464. ddtc1-series.pdf Size:164K _diodes

DDTC (LO-R1) E NPN PRE-BIASED 100 mA SURFACE MOUNT TRANSISTOR Features A � Epitaxial Planar Die Construction SOT-523 � Complementary PNP Types Available (DDTA) Dim Min Max Typ � Built-In Biasing Resistors A 0.15 0.30 0.22 � Lead Free/RoHS Compliant (Note 2) TOP VIEW C B 0.75 0.85 0.80 B � "Green" Device (Note 3 and 4) C 1.45 1.75 1.60 D ? ? 0.50 G Mechanical Data G 0.90

1.465. zxmhc10a07t8.pdf Size:287K _diodes

ZXMHC10A07T8 COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE SUMMARY N-Channel = V(BR)DSS = 100V : RDS(on) = 0.7 ; ID = 1.4A P-Channel = V(BR)DSS = -100V : RDS(on) = 1.0 ; ID = -1.3A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency

1.466. ddtc123eca_ddtc143eca_ddtc114eca_ddtc124eca_ddtc144eca_ddtc115eca.pdf Size:99K _diodes

DDTC(R1 = R2 SERIES) CA NPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Features Mechanical Data • Epitaxial Planar Die Construction • Case: SOT23 • Complementary PNP Types Available (DDTA) • Case material: Molded Plastic. “Green” Molding Compound. • Built-In Biasing Resistors, R1 = R2 • Classification Rating 94V-0 • Totally Lead-Free & Fully RoHS complia

1.467. ddtc1----ka.pdf Size:140K _diodes

DDTC (R1?R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features � Epitaxial Planar Die Construction � Complementary PNP Types Available (DDTA) A � Built-In Biasing Resistors, R1?R2 SC-59 � Lead Free/RoHS Compliant (Note 1) Dim Min Max � "Green" Device, Note 2 and 3 B C A 0.35 0.50 B 1.50 1.70 Mechanical Data C 2.70 3.00 G � Case: SC-59 D 0.95 H

1.468. ddtc1--ee.pdf Size:297K _diodes

DDTC (R1 = R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A � Epitaxial Planar Die Construction SOT-523 � Complementary PNP Types Available (DDTA) � Built-In Biasing Resistors, R1 = R2 Dim Min Max Typ B C � Lead Free/RoHS Compliant (Note 1) TOP VIEW A 0.15 0.30 0.22 � "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 C 1.45 1.75 1.60 Mechanical Dat

1.469. ddtc113tlp.pdf Size:125K _diodes

DDTC113TLP PRE-BIASED SMALL SIGNAL SURFACE MOUNT NPN TRANSISTOR Features Mechanical Data � Epitaxial Planar Die Construction � Case: DFN1006-3 � Ultra-Small Leadless Surface Mount Package � Case Material: Molded Plastic. "Green� Molding Compound. UL Flammability Classification Rating 94V-0 � Ideally Suited for Automated Assembly Processes � Moisture Sensitivity: Level 1 per J-STD-020

1.470. ddc11--h_ddc12--h_ddc14--h-series.pdf Size:180K _diodes

DDC (xxxx) H NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features � Epitaxial Planar Die Construction A SOT-563 � Complementary PNP Types Available Dim Min Max Typ (DDA) A 0.15 0.30 0.25 � Built-In Biasing Resistors B C � Lead Free By Design/RoHS Compliant (Note 3) NXXYM B 1.10 1.25 1.20 � "Green" Device (Note 4 and 5) C 1.55 1.70 1.60 D 0.50 D Mechanical

1.471. ddtc1----gka.pdf Size:124K _diodes

DDTC (R2-ONLY SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features � Epitaxial Planar Die Construction A SC-59 � Complementary PNP Types Available (DDTA) C Dim Min Max � Built-In Biasing Resistor, R2 only A 0.35 0.50 � Lead Free/RoHS Compliant (Note 2) B C B 1.50 1.70 � "Green" Device, Note 3 and 4 C 2.70 3.00 BE Mechanical Data D 0.95 G � Case:

1.472. ddtc1xxtca.pdf Size:117K _diodes

DDTC (R1-ONLY SERIES) CA NPN PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features � Epitaxial Planar Die Construction � Complementary PNP Types Available (DDTA) A � Built-In Biasing Resistor, R1 only SOT-23 C � Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2 and 3) Dim Min Max TO

1.473. ddtc1---e-series.pdf Size:182K _diodes

? DDTC (R1 R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features � Epitaxial Planar Die Construction A SOT-523 � Complementary PNP Types Available (DDTA) � Built-In Biasing Resistors, R1?R2 Dim Min Max Typ � Lead Free/RoHS Compliant (Note 2) B C A 0.15 0.30 0.22 TOP VIEW � "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 C 1.45 1.75 1.60 Mechanical Data

1.474. ddtc113tca_ddtc123tca_ddtc143tca_ddtc114tca_ddtc124tca_ddtc144tca_ddtc115tca_ddtc125tca.pdf Size:98K _diodes

DDTC(R1-ONLY SERIES) CA NPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Product Summary Features and Benefits • Epitaxial Planar Die Construction Part Number R1 (NOM) • Complementary PNP Types Available (DDTA) DDTC113TCA 1KΩ • Built-In Biasing Resistors, R1 only DDTC123TCA 2.2KΩ • “Lead Free”, RoHS Compliant (Note 1) DDTC143TCA 4.7KΩ • Halogen

1.475. ddc12--u_ddc14--u-series.pdf Size:164K _diodes

DDC (LO-R1) U NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features � Epitaxial Planar Die Construction A SOT-363 � Complementary PNP Types Available (DDA) Dim Min Max � Built-In Biasing Resistors A 0.10 0.30 � Lead Free/RoHS Compliant (Note 3) B 1.15 1.35 B C � "Green" Device (Note 4 and 5) NXX YM C 2.00 2.20 D 0.65 Nominal Mechanical Data F 0.30 0.40

1.476. ddtc1----tka.pdf Size:128K _diodes

DDTC (R1-ONLY SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features � Epitaxial Planar Die Construction A SC-59 � Complementary PNP Types Available (DDTA) C Dim Min Max � Built-In Biasing Resistor, R1 only A 0.35 0.50 � Lead Free/RoHS Compliant (Note 2) B C B 1.50 1.70 � "Green" Device, Note 3 and 4 C 2.70 3.00 Mechanical Data E B D 0.95 G � Case

1.477. ddtc1-----ca.pdf Size:126K _diodes

DDTC (R1?R2 SERIES) CA NPN PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features � Epitaxial Planar Die Construction SOT-23 A � Complementary PNP Types Available (DDTA) Dim Min Max � Built-In Biasing Resistors, R1?R2 A 0.37 0.51 � Lead, Halogen and Antimony Free, RoHS Compliant TOP VIEW "Green" Device (N

1.478. ddtc113tka_ddtc123tka_ddtc143tka_ddtc114tka_ddtc124tka_ddtc144tka_ddtc115tka_ddtc125tka.pdf Size:78K _diodes

DDTC (R1-ONLY SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction A SC-59 • Complementary PNP Types Available (DDTA) C Dim Min Max • Built-In Biasing Resistor, R1 only A 0.35 0.50 • Lead Free/RoHS Compliant (Note 2) B C B 1.50 1.70 • "Green" Device, Note 3 and 4 C 2.70 3.00 Mechanical Data E B D 0.9

1.479. zxmc10a816n8.pdf Size:183K _diodes

A Product Line of Diodes Incorporated ZXMC10A816N8 100V SO8 Complementary Dual enhancement mode MOSFET Summary ID (A) Device V(BR)DSS (V) QG (nC) RDS(on) (? ?) ? ? TA= 25� �C � � 0.230 @ VGS= 10V 2.1 Q1 100 9.2 0.300 @ VGS= 4.5V 1.9 0.235 @ VGS= -10V -2.2 Q2 -100 16.5 0.320 @ VGS= -4.5V -1.9 Description This new generation complementary dual MOSFET D1 D2 featu

1.480. ddtc1---lp_series.pdf Size:201K _diodes

DDTCxxxxLP (R1?R2 Series) PRE-BIASED SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data � Epitaxial Planar Die Construction � Case: DFN1006-3 � Ultra-Small Leadless Surface Mount Package � Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 � Ideally Suited

1.481. ddtc144elp.pdf Size:185K _diodes

DDTC144ELP PRE-BIASED (R1=R2) SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR Features � Epitaxial Planar Die Construction � Complementary PNP Type Available (DDTA144ELP) 2 3 E � Ultra-Small Leadless Surface Mount Package � Ideally Suited for Automated Assembly Processes C R2 R1 � Lead Free By Design/RoHS Compliant (Note 1) 1 B � "Green" Device (Note 2) � Qualified to AEC-

1.482. ddtc1----tua.pdf Size:124K _diodes

DDTC (R1-ONLY SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features � Epitaxial Planar Die Construction SOT-323 A � Complementary PNP Types Available (DDTA) Dim Min Max C � Built-In Biasing Resistor, R1 only A 0.25 0.40 � Lead Free/RoHS Compliant (Note 2) B 1.15 1.35 B C � "Green" Device (Note 3 and 4) C 2.00 2.20 D 0.65 Nominal B E Mechanical Data

1.483. ddtc1-----eka.pdf Size:126K _diodes

DDTC (R1 = R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features � Epitaxial Planar Die Construction A SC-59 � Complementary PNP Types Available (DDTA) Dim Min Max � Built-In Biasing Resistors, R1 = R2 A 0.35 0.50 � Lead Free/RoHS Compliant (Note 2) � "Green" Device, Note 3 and 4 B C B 1.50 1.70 C 2.70 3.00 D 0.95 Mechanical Data G G 1.90 � Cas

1.484. ddc12--h_ddc14--h-series.pdf Size:161K _diodes

DDC (LO-R1) H NPN PRE-BIASED SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR Features � Epitaxial Planar Die Construction SOT-563 A � Complementary PNP Types Available (DDA) Dim Min Max Typ � Built-In Biasing Resistors A 0.15 0.30 0.25 � Lead Free By Design/RoHS Compliant (Note 3) � "Green" Device (Note 4 and 5) B B 1.10 1.25 1.20 C NXXYM C 1.55 1.70 1.60 Mechanical Data

1.485. ddtc1---eua.pdf Size:133K _diodes

DDTC (R1 = R2 SERIES) UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features � Epitaxial Planar Die Construction SOT-323 A � Complementary PNP Types Available (DDTA) Dim Min Max � Built-In Biasing Resistors, R1 = R2 A 0.25 0.40 � Lead Free/RoHS Compliant (Note 2) B C B 1.15 1.35 � "Green" Device (Note 3 and 4) C 2.00 2.20 Mechanical Data D 0.65 Nominal G

1.486. bsc120n03ls_rev1.6.pdf Size:686K _infineon

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1.487. bsc159n10lsfrev2.09.pdf Size:666K _infineon

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1.488. bsc12dn20ns3rev2.2.pdf Size:308K _infineon

Type BSC12DN20NS3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 200 V � Optimized for dc-dc conversion RDS(on),max 125 m? � N-channel, normal level ID 11.3 A � Excellent gate charge x R product (FOM) DS(on) � Low on-resistance R DS(on) PG-TDSON-8 � 150 �C operating temperature � Pb-free lead plating; RoHS compliant � Qualified according to JEDEC1) for target applicat

1.489. bsc100n03msg_rev1.16.pdf Size:677K _infineon

% ! % D %0<40= #:A0< "% & #<:/?.> %?88,;53F;A@ ) AF74AA= 0" +* ' D n) m x G 0 1 S 'AI !* ( 8AD #;9: !D7CG7@5K .( +. G 44 S 3H3>3@5:7 F7EF76 D G? D ON? S ) 5:3@@7> S 07DK >AI A@ D7E;EF3@57 0 D n) G S J57>>7@F 93F7 5:3D97 J BDA6G5F !* ( D n) 1) S , G3>;8;76 355AD6;@9 FA % 8AD F3D97F 3BB>;53F;A@E S .GB7D;AD F:7D?3>

1.490. bsc130p03lsg_rev1.04_.pdf Size:595K _infineon

BSC130P03LS G OptiMOS�-P Power-Transistor Product Summary Features VDS -30 V � P-Channel RDS(on),max 13 mW � Enhancement mode ID -22.5 A � Logic level � 150�C operating temperature � Avalanche rated; RoHS compliant PG-TDSON-8 � Vgs=25V, specially suited for notebook applications � Halogen-free according to IEC61249-2-21 � Pb-free lead plating; RoHS compliant Type Package Marking L

1.491. bsc152n10nsfrev2.08.pdf Size:665K _infineon

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1.492. bsc190n15ns3_rev2.4.pdf Size:567K _infineon

$ $ C "9@/; %;+8<3<=9; ";9.>-= $>77+;B Features 150 V DS Q ' 381>>5< >?B=1< <5F5< 19 m DS(on) max Q H35<<5>D 71D5 381B75 H @B?4E3D ( & DS(on) 50 A D Q .5BI B5C9CD1>35 DS(on) Q T ?@5B1D9>7 D5=@5B1DEB5 Q )2 6B55 <514 @<1D9>7 + ?", 3?=@<91>D 1) Q * E1<96954 133?B49>7 D? $ 6?B D1B75D 1@@<931D9?> Q #451< 6?B 8978 6B5AE5>3I CG9D389>7 1>4 CI>38B?>?EC B53D96931D9?> Q "1

1.493. bsc100n10nsfrev2.08.pdf Size:654K _infineon

1.494. bsc118n10nsrev1.08_pdf.pdf Size:439K _infineon

BSC118N10NS G OptiMOS�2 Power-Transistor Product Summary Features V 100 V DS � N-channel, normal level R 11.8 m? DS(on),max � Excellent gate charge x R product (FOM) DS(on) I 71 A D � Very low on-resistance R DS(on) � 150 �C operating temperature PG-TDSON-8 � Pb-free lead plating; RoHS compliant � Qualified according to JEDEC1) for target application � Ideal for high-frequency

1.495. bsc119n03s_rev1.91_g.pdf Size:635K _infineon

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1.496. bsc123n08ns3g_rev2.5.pdf Size:589K _infineon

$ $ C "9@/; %;+8<3<=9; ";9.>-= $>77+;B Features D Q #451< 6?B 8978 6B5AE5>3I CG9D389>7 1>4 CI>3 B53 1 m D n) m x Q ( @D9=9J54 D538>?F5BD5BC D Q H35<<5>D 71D5 381B75 H @B?4E3D ( & D n) Q ,E@5B9?B D85B=1< B5C9CD1>35 Q ' 381>>5< >?B=1< <5F5< Q 1F1<1>385 D5CD54 Q )2 6B55 @<1D9>7 + ?", 3?=@<91>D 1) Q * E1<96954 133?B49>7 D? $ 6?B D1B75D 1@@<931D9?>C Q "1 6B55

1.497. bsc120n03msg_rev1.17.pdf Size:678K _infineon

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1.498. bsc123n10lsrev2.08.pdf Size:675K _infineon

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1.499. bsc160n10ns3rev2.4.pdf Size:545K _infineon

Type BSC160N10NS3 G TM 3 Power-Transistor Product Summary VDS 100 V 9 .1)+ )7%$ &-/ $# $# # -,3%/0)-, RDS(on),max 16 m 9 # (!,,%* ,-/+ !* *%3%* ID 42 A 9 5# %**%,1 '!1% # (!/'% 5 R product (FOM) DS(on) 9 %/6 *-4 -, /%0)01!,# % R DS(on) PG-TDSON-8 9 8 -.%/!1),' 1%+ .%/!12/% 9 " &/%% *%!$ .*!1),' - # -+ .*)!,1 1) 9 2!*)&)%$ !# # -/$),' 1- for target application 9 !*-'%, &/%% !#

1.500. bsc105n10lsfrev2.09.pdf Size:658K _infineon

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1.501. bsc109n10ns3rev2.0.pdf Size:655K _infineon

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1.502. bsc196n10nsrev1.07.pdf Size:659K _infineon

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1.503. bsc16dn25ns3rev2.2.pdf Size:577K _infineon

Type BSC16DN25NS3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 250 V � Optimized for dc-dc conversion RDS(on),max 165 mW � N-channel, normal level ID 10.9 A � Excellent gate charge x R product (FOM) DS(on) � Low on-resistance R DS(on) PG-TDSON-8 � 150 �C operating temperature � Pb-free lead plating; RoHS compliant � Qualified according to JEDEC1) for target applicat

1.504. bsc110n06ns3_rev2.3.pdf Size:591K _infineon

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1.505. bsc190n12ns3rev2.5.pdf Size:656K _infineon

% ! !% TM #:A0< &<,9=4=>:< #<:/?.> %?88,>5< >?B=1< <5F5< m D n) m x Q H35<<5>D 71D5 381B75 H @B?4E3D ( & 44 D n) D Q .5BI B5C9CD1>35 D n) G? D ON? Q T ?@5B1D9>7 D5=@5B1DEB5 Q )2 6B55 <514 @<1D9>7 + ?", 3?=@<91>D 1) Q * E1<96954 133?B49>7 D? $ 6?B D1B75D 1@@<931D9?> Q #451< 6?B 8978 6B5AE5>3I CG9D389>7 1>4 CI>38B?>?EC B53D96931D9?> Q

1.506. bsc100n06ls3_rev2.2.pdf Size:585K _infineon

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1.507. bsc100n03ls_rev1.6.pdf Size:689K _infineon

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1.508. bsc150n03ld_rev1.4.pdf Size:589K _infineon

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1.509. ixfc110n10p.pdf Size:230K _ixys

IXFC 110N10P VDSS = 100 V PolarHVTM HiPerFET ID25 = 60 A Power MOSFET ? ? RDS(on) ? 17 m? ? ? ? ? ? ? ISOPLUS220TM ? trr ? 150 ns ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) E153432 VDSS TJ = 25� C to 175� C 100 V VDGR TJ = 25� C to 175� C; RGS = 1 M? 100

1.510. ixgh48n60c3c1.pdf Size:185K _ixys

Preliminary Technical Information GenX3TM 600V IGBT VCES = 600V IXGH48N60C3C1 w/ SiC Anti-Parallel IC110 = 48A ? Diode VCE(sat) ? 2.5V ? ? ? tfi(typ) = 38ns High Speed PT IGBT for 40 - 100kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25�C to 150�C 600 V VCGR TJ = 25�C to 150�C, RGE = 1M? 600 V G C VGES Continuous �20 V E ( TAB ) VGEM Transient �30 V G

1.511. ixgh48n60b3c1.pdf Size:187K _ixys

Preliminary Technical Information GenX3TM 600V IGBT VCES = 600V IXGH48N60B3C1 w/ SiC Anti-Parallel IC110 = 48A ? Diode VCE(sat) ? 1.8V ? ? ? tfi(typ) = 116ns Medium Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TC = 25�C to 150�C 600 V G VCGR TJ = 25�C to 150�C, RGE = 1M? 600 V ( TAB ) C E VGES Continuous � 20 V VGEM Transient

1.512. ixtc110n25t.pdf Size:186K _ixys

Trench Gate VDSS = 250V IXTC110N25T Power MOSFET ID25 = 50A ? ? RDS(on) ? ? ? 27m? ? ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated ISOPLUS220 (IXTC) Symbol Test Conditions Maximum Ratings E153432 VDSS TJ = 25�C to 150�C 250 V VDGR TJ = 25�C to 150�C, RGS = 1M? 250 V VGSS Continuous � 20 V G VGSM Transient � 30 V D S ID25 TC = 25�C 50 A I

1.513. ixgr60n60c3c1.pdf Size:194K _ixys

GenX3TM 600V IGBT VCES = 600V IXGR60N60C3C1 w/ SiC Anti-Parallel IC110 = 30A ? Diode VCE(sat) ? ?? 2.5V ? ? tfi(typ) = 50ns (Electrically Isolated Back Surface) High Speed PT IGBT for 40-100kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25�C to 150�C 600 V VCGR TJ = 25�C to 150�C, RGE = 1M? 600 V G VGES Continuous �20 V C Isolated Tab E VGEM Transien

1.514. ixgh36n60b3c1.pdf Size:180K _ixys

Preliminary Technical Information GenX3TM 600V IGBT VCES = 600V IXGH36N60B3C1 w/ SiC Anti-Parallel IC110 = 36A ? Diode VCE(sat) ? 1.8V ? ? ? tfi(typ) = 100ns Medium Speed Low Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TJ = 25�C to 150�C 600 V G (TAB) VCGR TJ = 25�C to 150�C, RGE = 1M? 600 V C E VGES Continuous � 20 V VGEM Transient

1.515. ixtc160n10t.pdf Size:187K _ixys

Preliminary Technical Information IXTC160N10T VDSS = 100 V TrenchMVTM ID25 = 83 A Power MOSFET ? ? RDS(on) ? 7.5 m? ? ? ? ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220 (IXTC) E153432 VDSS TJ = 25�C to 175�C 100 V VDGR TJ = 25�C to 175�C; RGS = 1 M? 100 V VGSM Transient � 20 V ID25 TC = 25�C8

1.516. ixuc160n075.pdf Size:511K _ixys

ADVANCED TECHNICAL INFORMATION Trench Power MOSFET IXUC160N075 VDSS = 75 V ISOPLUS220TM ID25 = 160 A ? Electrically Isolated Back Surface RDS(on)= 6.5 m? ? ? ? ISOPLUS 220TM Symbol Test Conditions Maximum Ratings G VDSS TJ = 25�C to 150�C75 V D S Isolated back surface* VGS Continuous �20 V ID25 TC = 25�C; Note 1 160 A G = Gate, D = Drain, S = Source ID90 TC = 90�C, Note 1 130 A

1.517. ixfc14n60p.pdf Size:229K _ixys

IXFC 14N60P VDSS = 600 V PolarHVTM HiPerFET ID25 = 8 A Power MOSFET ? ? RDS(on) ? 630 m? ? ? ? ? ? ? ISOPLUS220TM ? trr ? 200 ns ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings ISOPLUS220TM (IXFC) E153432 VDSS TJ = 25� C to 150� C 600 V VDGR TJ = 25� C to 150� C; RGS = 1 M? 600

1.518. ixfc16n50p.pdf Size:223K _ixys

IXFC 16N50P VDSS = 500 V PolarHVTM HiPerFET ID25 = 10 A Power MOSFET ? ? RDS(on) ? 450 m? ? ? ? ? ? ? ISOPLUS220TM ? trr ? 200 ns ? ? ? (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated ISOPLUS220TM (IXFC) Symbol Test Conditions Maximum Ratings E153432 VDSS TJ = 25� C to 150� C 500 V VDGR TJ = 25� C to 150� C; RGS = 1 M? 500

1.519. dtc144ee.pdf Size:206K _mcc

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 DTC144EE Fax: (818) 701-4939 Features � Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) � Epoxy meets UL 94 V-0 flammability rating � Moisure Sensitivity Level 1 � Built-in bias resistors enable the configurat

1.520. dtc144eua_sot-323.pdf Size:218K _mcc

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 DTC144EUA Fax: (818) 701-4939 Features � Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) � Epoxy meets UL 94 V-0 flammability rating � Moisure Sensitivity Level 1 � Built-in bias resistors enable the configura

1.521. dtc114yua_sot-323.pdf Size:197K _mcc

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 DTC114YUA Fax: (818) 701-4939 Features � Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) � Epoxy meets UL 94 V-0 flammability rating � Moisure Sensitivity Level 1 � Built-in bias resistors enable the configura

1.522. dtc124eua_sot-323.pdf Size:200K _mcc

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 DTC124EUA Fax: (818) 701-4939 Features � Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) � Epoxy meets UL 94 V-0 flammability rating � Moisure Sensitivity Level 1 � Built-in bias resistors enable the configura

1.523. dtc114te_sot-523.pdf Size:206K _mcc

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components DTC114TE CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features � Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) � Epoxy meets UL 94 V-0 flammability rating � Moisure Sensitivity Level 1 NPN Digital Transistor � Built-in bias resist

1.524. dtc114ye.pdf Size:197K _mcc

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 DTC114YE Fax: (818) 701-4939 Features � Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) � Epoxy meets UL 94 V-0 flammability rating � Moisure Sensitivity Level 1 � Built-in bias resistors enable the configurat

1.525. dtc143eca_sot-23.pdf Size:282K _mcc

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 DTC143ECA Phone: (818) 701-4933 Fax: (818) 701-4939 Features � Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Digital Transistors � Epitaxial Planar Die Construction � Complementary PNP Types Available � Built-In Biasing Resist

1.526. dtc124ee_sot-523.pdf Size:198K _mcc

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 DTC124EE Fax: (818) 701-4939 Features � Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) � Epoxy meets UL 94 V-0 flammability rating � Moisure Sensitivity Level 1 � Built-in bias resistors enable the configurat

1.527. dtc114tua_sot-323.pdf Size:208K _mcc

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth DTC114TUA Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features � Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) � Epoxy meets UL 94 V-0 flammability rating � Moisure Sensitivity Level 1 NPN Digital Transistor � Built-in bias resist

1.528. dtc143xca_sot-23.pdf Size:294K _mcc

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 DTC143XCA Phone: (818) 701-4933 Fax: (818) 701-4939 Features � Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) � Epitaxial Planar Die Construction � Complementary NPN Types Available Digital Transistors � Built-In Biasing Resi

1.529. dtc123jua_sot-323.pdf Size:224K _mcc

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth DTC123JUA Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features � Epitaxial Planar Die Construction � Complementary NPN Types Available Digital Transistors � Built-in Bias Resistors � Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information

1.530. dtc113zca_sot-23.pdf Size:386K _mcc

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components DTC113ZCA CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features � Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) � Epitaxial Planar Die Construction � Complementary NPN Types Available Digital Transistors � Built-In Biasing Resis

1.531. dtc113zua.pdf Size:183K _mcc

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components DTC113ZUA CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features � Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) � Epitaxial Planar Die Construction � Complementary NPN Types Available Digital Transistors � Built-In Biasing Resi

1.532. dtc144te_sot-523.pdf Size:201K _mcc

MCC Micro Commercial Components TM DTC144TE 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features � Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN Digital Transistor � Epoxy meets UL 94 V-0 flammability rating � Moisure Sensitivity Level 1 � Built-in bias resis

1.533. dtc144tua.pdf Size:191K _mcc

MCC TM Micro Commercial Components DTC144TUA 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features � Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN Digital Transistor � Epoxy meets UL 94 V-0 flammability rating � Moisure Sensitivity Level 1 � Built-in bias resi

1.534. nsbc144wpdp6.pdf Size:124K _onsemi

NSBC144WPDP6 Complementary Bias Resistor Transistors R1 = 47 kW, R2 = 22 kW NPN and PNP Transistors with Monolithic http://onsemi.com Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor (3) (2) (1) Transistor (BRT) contains a single transistor with a monolithic bias

1.535. nsbc124xpdxv6.pdf Size:138K _onsemi

MUN5334DW1, NSBC124XPDXV6 Complementary Bias Resistor Transistors R1 = 22 kW, R2 = 47 kW http://onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a mono

1.536. nsvbc114epdxv6t1g.pdf Size:101K _onsemi

MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6 Complementary Bias Resistor Transistors http://onsemi.com R1 = 10 kW, R2 = 10 kW NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single

1.537. nsbc143epdxv6.pdf Size:158K _onsemi

MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6 Complementary Bias Resistor Transistors http://onsemi.com R1 = 4.7 kW, R2 = 4.7 kW PIN CONNECTIONS NPN and PNP Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a singl

1.538. nsbc113epdxv6.pdf Size:82K _onsemi

MUN5330DW1, NSBC113EPDXV6 Complementary Bias Resistor Transistors R1 = 1 kW, R2 = 1 kW http://onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monoli

1.539. nsbc123jpdp6.pdf Size:103K _onsemi

MUN5335DW1, NSBC123JPDXV6, NSBC123JPDP6 Complementary Bias Resistor Transistors R1 = 2.2 kW, R2 = 47 kW http://onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a singl

1.540. nsbc114ef3-d.pdf Size:117K _onsemi

NSBC114EF3T5G Series Preferred Devices Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http://onsemi.com device and its external resistor bias network. The digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a

1.541. nsbc124xf3.pdf Size:150K _onsemi

MUN2234, MMUN2234L, MUN5234, DTC124XE, DTC124XM3, NSBC124XF3 Digital Transistors (BRT) R1 = 22 kW, R2 = 47 kW http://onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor

1.542. nsbc114edxv6.pdf Size:89K _onsemi

MUN5211DW1, NSBC114EDXV6, NSBC114EDP6 Dual NPN Bias Resistor Transistors http://onsemi.com R1 = 10 kW, R2 = 10 kW NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor wit

1.543. nsbc115edxv6.pdf Size:113K _onsemi

MUN5236DW1, NSBC115EDXV6 Dual NPN Bias Resistor Transistors R1 = 100 kW, R2 = 100 kW http://onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor with a monolith

1.544. nsbc123ef3.pdf Size:109K _onsemi

MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 2.2 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT) c

1.545. nsbc144edxv6.pdf Size:89K _onsemi

MUN5213DW1, NSBC144EDXV6, NSBC144EDP6 Dual NPN Bias Resistor Transistors http://onsemi.com R1 = 47 kW, R2 = 47 kW NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor wit

1.546. nsbc143tpdxv6.pdf Size:80K _onsemi

MUN5316DW1, NSBC143TPDXV6 Complementary Bias Resistor Transistors R1 = 4.7 kW, R2 = 8 kW http://onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a mon

1.547. nsvdtc144wet1g.pdf Size:156K _onsemi

MUN2237, MMUN2237L, MUN5237, DTC144WE, DTC144WM3, NSBC144WF3 Digital Transistors (BRT) R1 = 47 kW, R2 = 22 kW http://onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (

1.548. nsvbc114edxv6t1g.pdf Size:89K _onsemi

1.549. nsbc124ef3.pdf Size:155K _onsemi

1.550. nsbc144wdxv6.pdf Size:147K _onsemi

MUN5237DW1, NSBC144WDXV6, NSBC144WDP6 Dual NPN Bias Resistor Transistors http://onsemi.com R1 = 47 kW, R2 = 22 kW PIN CONNECTIONS NPN Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor wit

1.551. nsbc113ef3.pdf Size:110K _onsemi

MUN2230, MMUN2230L, MUN5230, DTC113EE, DTC113EM3, NSBC113EF3 Digital Transistors (BRT) R1 = 1 kW, R2 = 1 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT)

1.552. nsbc123edxv6.pdf Size:131K _onsemi

MUN5231DW1, NSBC123EDXV6 Dual NPN Bias Resistor Transistors R1 = 2.2 kW, R2 = 2.2 kW http://onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor with a monolith

1.553. nsbc124epdp6.pdf Size:110K _onsemi

MUN5312DW1, NSBC124EPDXV6, NSBC124EPDP6 Complementary Bias Resistor Transistors www.onsemi.com R1 = 22 kW, R2 = 22 kW NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transisto

1.554. nsbc124edxv6.pdf Size:146K _onsemi

MUN5212DW1, NSBC124EDXV6, NSBC124EDP6 Dual NPN Bias Resistor Transistors http://onsemi.com R1 = 22 kW, R2 = 22 kW PIN CONNECTIONS NPN Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor wit

1.555. nsbc114tdxv6.pdf Size:89K _onsemi

MUN5215DW1, NSBC114TDXV6, NSBC114TDP6 Dual NPN Bias Resistor Transistors http://onsemi.com R1 = 10 kW, R2 = 8 kW PIN CONNECTIONS NPN Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with

1.556. nsvdtc144em3t5g.pdf Size:116K _onsemi

1.557. nsvbc124edxv6t1g.pdf Size:146K _onsemi

1.558. dtc114eet1-series.pdf Size:92K _onsemi

DTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor http://onsemi.com Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base

1.559. nsbc143tdxv6.pdf Size:113K _onsemi

MUN5216DW1, NSBC143TDXV6 Dual NPN Bias Resistor Transistors R1 = 4.7 kW, R2 = 8 kW http://onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias R

1.560. nsbc144ef3.pdf Size:116K _onsemi

1.561. nsbc124edp6.pdf Size:146K _onsemi

1.562. bc182-b.pdf Size:60K _onsemi

BC182, BC182B Amplifier Transistors NPN Silicon Features http://onsemi.com � These are Pb-Free Devices* COLLECTOR 1 2 BASE MAXIMUM RATINGS 3 Rating Symbol Value Unit EMITTER Collector-Emitter Voltage VCEO 50 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc TO-92 Collector Current - Continuous IC 100 mAdc CASE 29 Total Device Dissipation @ TA = 25�C PD 35

1.563. nsbc114epdxv6.pdf Size:101K _onsemi

1.564. nsbc114edxv6-d.pdf Size:81K _onsemi

NSBC114EDXV6T1, NSBC114EDXV6T5 Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors http://onsemi.com with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with (3) (2) (1) a monolithic bias network consisting of two resistors; a series base R1 R2 resistor and a base-emitter resistor. These digital transi

1.565. d45c12_d44c12.pdf Size:73K _onsemi

D45C12 (PNP), D44C12 (NPN) Complementary Silicon Power Transistor The D45C12 and D44C12 are for general purpose driver or medium power output stages in CW or switching applications. http://onsemi.com Features 4.0 AMPERE COMPLEMENTARY � Low Collector-Emitter Saturation Voltage - 0.5 V (Max) SILICON POWER � High ft for Good Frequency Response � Low Leakage Current TRANSISTORS 80 VOLTS �

1.566. nsbc143zpdxv6.pdf Size:104K _onsemi

MUN5333DW1, NSBC143ZPDXV6, NSBC143ZPDP6 Complementary Bias Resistor Transistors www.onsemi.com R1 = 4.7 kW, R2 = 47 kW PIN CONNECTIONS NPN and PNP Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single tr

1.567. nsbc115tdp6.pdf Size:101K _onsemi

NSBC115TD Dual NPN Bias Resistor Transistors R1 = 100 kW, R2 = 8 kW NPN Transistors with Monolithic Bias http://onsemi.com Resistor Network MARKING This series of digital transistors is designed to replace a single DIAGRAM device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias AFMG SOT-963 network cons

1.568. nsbc143edp6.pdf Size:146K _onsemi

MUN5232DW1, NSBC143EDXV6, NSBC143EDP6 Dual NPN Bias Resistor Transistors http://onsemi.com R1 = 4.7 kW, R2 = 4.7 kW PIN CONNECTIONS NPN Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor w

1.569. nsvbc114ydxv6t1g.pdf Size:165K _onsemi

NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias http://onsemi.com Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are SOT-

1.570. dtc114em3-series.pdf Size:127K _onsemi

DTC114EM3T5G Series Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor http://onsemi.com contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor

1.571. nsbc114ef3.pdf Size:155K _onsemi

MUN2211, MMUN2211L, MUN5211, DTC114EE, DTC114EM3, NSBC114EF3 Digital Transistors (BRT) R1 = 10 kW, R2 = 10 kW http://onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (

1.572. nsbc114ypdp6.pdf Size:103K _onsemi

MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6 Complementary Bias Resistor Transistors http://onsemi.com R1 = 10 kW, R2 = 47 kW PIN CONNECTIONS NPN and PNP Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single

1.573. nsbc115tpdp6.pdf Size:106K _onsemi

NSBC115TPDP6 Complementary Bias Resistor Transistors R1 = 100 kW, R2 = 8 kW NPN and PNP Transistors with Monolithic http://onsemi.com Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor (3) (2) (1) Transistor (BRT) contains a single transistor with a monolithic bias

1.574. nsbc113edxv6.pdf Size:131K _onsemi

MUN5230DW1, NSBC113EDXV6 Dual NPN Bias Resistor Transistors R1 = 1 kW, R2 = 1 kW http://onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor with a monolithic b

1.575. nsbc114tdp6.pdf Size:89K _onsemi

1.576. dtc114eseria_8a-m_sot416.pdf Size:118K _onsemi

DTC114EET1 SERIES Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor http://onsemi.com Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base

1.577. nsbc143ef3.pdf Size:155K _onsemi

MUN2232, MMUN2232L, MUN5232, DTC143EE, DTC143EM3, NSBC143EF3 Digital Transistors (BRT) R1 = 4.7 kW, R2 = 4.7 kW http://onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor

1.578. nsvdtc113em3t5g.pdf Size:110K _onsemi

1.579. nsvdtc123em3t5g.pdf Size:109K _onsemi

1.580. nsbc144wf3.pdf Size:156K _onsemi

1.581. dtc114exv3t1-series.pdf Size:97K _onsemi

DTC114EXV3T1 Series Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor http://onsemi.com contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor

1.582. dtc144tt1-d.pdf Size:51K _onsemi

DTC144TT1 Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http://onsemi.com device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a s

1.583. mc100el1648.pdf Size:215K _onsemi

MC100EL1648 5 V ECL Voltage Controlled Oscillator Amplifier Description The MC100EL1648 is a voltage controlled oscillator amplifier that requires an external parallel tank circuit consisting of the inductor (L) http://onsemi.com and capacitor (C). A varactor diode may be incorporated into the tank circuit to provide a voltage variable input for the oscillator (VCO). MARKING This device

1.584. nsbc143zpdp6.pdf Size:104K _onsemi

1.585. nsbc144epdp6.pdf Size:140K _onsemi

MUN5313DW1, SMUN5313DW1, NSBC144EPDXV6, NSBC144EPDP6 Complementary Bias Resistor Transistors http://onsemi.com R1 = 47 kW, R2 = 47 kW PIN CONNECTIONS NPN and PNP Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) cont

1.586. nsbc123tf3.pdf Size:155K _onsemi

MUN2238, MMUN2238L, MUN5238, DTC123TE, DTC123TM3, NSBC123TF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 8 kW http://onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (

1.587. nsbc143tf3.pdf Size:148K _onsemi

MUN2216, MMUN2216L, MUN5216, DTC143TE, DTC143TM3, NSBC143TF3 Digital Transistors (BRT) R1 = 4.7 kW, R2 = 8 kW http://onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (

1.588. nsbc144epdxv6.pdf Size:140K _onsemi

1.589. nsbc144edp6.pdf Size:89K _onsemi

1.590. nsvdtc143zet1g.pdf Size:115K _onsemi

MUN2233, MMUN2233L, MUN5233, DTC143ZE, DTC143ZM3, NSBC143ZF3 Digital Transistors (BRT) R1 = 4.7 kW, R2 = 47 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BR

1.591. nsbc143zdp6.pdf Size:123K _onsemi

MUN5233DW1, NSBC143ZDXV6, NSBC143ZDP6 Dual NPN Bias Resistor Transistors http://onsemi.com R1 = 4.7 kW, R2 = 47 kW PIN CONNECTIONS NPN Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor wi

1.592. nsbc115tf3.pdf Size:150K _onsemi

MUN2241, MMUN2241L, MUN5241, DTC115TE, DTC115TM3, NSBC115TF3 Digital Transistors (BRT) R1 = 100 kW, R2 = 8 kW http://onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (

1.593. nsbc123tpdp6.pdf Size:106K _onsemi

NSBC123TPDP6 Complementary Bias Resistor Transistors R1 = 2.2 kW, R2 = 8 kW NPN and PNP Transistors with Monolithic http://onsemi.com Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor (3) (2) (1) Transistor (BRT) contains a single transistor with a monolithic bias

1.594. nsvdtc143zm3t5g.pdf Size:115K _onsemi

1.595. nsbc123tdp6.pdf Size:99K _onsemi

NSBC123TDP6 Dual NPN Bias Resistor Transistors R1 = 2.2 kW, R2 = 8 kW NPN Transistors with Monolithic Bias http://onsemi.com Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor (3) (2) (1) Transistor (BRT) contains a single transistor with a monolithic bias network consis

1.596. nsbc144tf3.pdf Size:150K _onsemi

MUN2240, MMUN2240L, MUN5240, DTC144TE, DTC144TM3, NSBC144TF3 Digital Transistors (BRT) R1 = 47 kW, R2 = 8 kW http://onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (B

1.597. nsbc123epdxv6.pdf Size:80K _onsemi

MUN5331DW1, NSBC123EPDXV6 Complementary Bias Resistor Transistors R1 = 2.2 kW, R2 = 2.2 kW http://onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a mo

1.598. nsbc143epdp6.pdf Size:158K _onsemi

1.599. nsvdtc144tm3t5g.pdf Size:150K _onsemi

1.600. nsbc143zdxv6.pdf Size:123K _onsemi

1.601. nsbc114tf3.pdf Size:155K _onsemi

MUN2215, MMUN2215L, MUN5215, DTC114TE, DTC114TM3, NSBC114TF3 Digital Transistors (BRT) R1 = 10 kW, R2 = 8 kW http://onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (B

1.602. nsbc114edp6.pdf Size:89K _onsemi

1.603. nsbc123jpdxv6.pdf Size:103K _onsemi

1.604. dtc114eet1_8a-m_sot416.pdf Size:116K _onsemi

1.605. nsbc144wdp6.pdf Size:120K _onsemi

NSBC114EDP6T5G Series Preferred Devices Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor NPN SILICON DIGITAL contains a single transistor with a monolithic bias network c

1.606. nsbc143zf3.pdf Size:115K _onsemi

1.607. nsbc124xdxv6.pdf Size:131K _onsemi

MUN5234DW1, NSBC124XDXV6 Dual NPN Bias Resistor Transistors R1 = 22 kW, R2 = 47 kW http://onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor with a monolithic

1.608. nsbc123jf3.pdf Size:156K _onsemi

MUN2235, MMUN2235L, MUN5235, DTC123JE, DTC123JM3, NSBC123JF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 47 kW http://onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT)

1.609. nsbc114epdp6.pdf Size:101K _onsemi

1.610. nsvdtc114ym3t5g.pdf Size:156K _onsemi

1.611. nsbc124epdxv6.pdf Size:110K _onsemi

1.612. nsbc114ypdxv6.pdf Size:103K _onsemi

1.613. nsbc123jdxv6.pdf Size:127K _onsemi

MUN5235DW1, NSBC123JDXV6, NSBC123JDP6 Dual NPN Bias Resistor Transistors http://onsemi.com R1 = 2.2 kW, R2 = 47 kW PIN CONNECTIONS NPN Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor wi

1.614. nsbc123jdp6.pdf Size:128K _onsemi

1.615. nsbc143edxv6.pdf Size:146K _onsemi

1.616. 2sc1688_e.pdf Size:56K _panasonic

Transistor 2SC1688 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 5.0� 0.2 4.0� 0.2 Features Small common emitter reverse transfer capacitance Cre. High transition frequency fT. Center at the emitter pin. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 �0.1 0.45 �0.1 Collector to base voltage VCBO 50 V 1.27 1.27 Collector

1.617. 2sc1360.pdf Size:37K _panasonic

Transistor 2SC1360, 2SC1360A Silicon NPN epitaxial planer type For intermadiate frequency amplification of TV image Unit: mm 5.9� 0.2 4.9� 0.2 Features High transition frequency fT. Large collector power dissipation PC. 0.7� 0.1 Absolute Maximum Ratings (Ta=25?C) 2.54� 0.15 Parameter Symbol Ratings Unit Collector to 2SC1360 50 VCBO V base voltage 2SC1360A 60 Collector to 2SC1360 45

1.618. 2sc1318a_e.pdf Size:49K _panasonic

Transistor 2SC1318A Silicon NPN epitaxial planer type For low-frequency driver amplification Unit: mm Complementary to 2SA720A 5.0� 0.2 4.0� 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 �0.1 0.45 �0.1 Collector to bas

1.619. 2sc1473_e.pdf Size:51K _panasonic

Transistor 2SC1473, 2SC1473A Silicon NPN triple diffusion planer type For general amplification Unit: mm 2SC1473 complementary to 2SA1018 5.0� 0.2 4.0� 0.2 2SC1473A complementary to 2SA1767 Features High collector to emitter voltage VCEO. High transition frequency fT. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 �0.1 0.45 �0.1 Collector to 2SC1473

1.620. 2sc1317_e.pdf Size:51K _panasonic

Transistor 2SC1317, 2SC1318 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Unit: mm Complementary to 2SA719 and 2SA720 5.0� 0.2 4.0� 0.2 Features Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA719 and 2SA720. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to 2SC1317 30 VCBO

1.621. 2sc1383_2sc1384.pdf Size:47K _panasonic

Transistor 2SC1383, 2SC1384 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Unit: mm Complementary to 2SA683 and 2SA684 5.9� 0.2 4.9� 0.2 Features Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA683 and 2SA684. 0.7� 0.1 Absolute Maximum Ratings (Ta=25?C) 2.54� 0.15 Parameter Symbol Ratings Unit Collecto

1.622. 2sc1226.pdf Size:75K _panasonic

1.623. 2sc1383_e.pdf Size:51K _panasonic

1.624. 2sc1567.pdf Size:93K _panasonic

Power Transistors 2SC1567, 2SC1567A Silicon NPN epitaxial planar type For low-frequency high power driver Unit: mm 8.0+0.5 �0.1 3.2�0.2 Complementary to 2SA0794, 2SA0794A ? 3.16�0.1 � Features � High collector-emitter voltage (Base open) VCEO � Optimum for the driver stage of low-frequency and 40 W to 100 W output amplifier � TO-126B package which requires no insulation plate for ins

1.625. 2sc1778.pdf Size:79K _panasonic

1.626. 2sc1359.pdf Size:52K _panasonic

Transistor 2SC1359 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SA838 5.0� 0.2 4.0� 0.2 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 �0.1 0.45 �0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter

1.627. 2sc1547.pdf Size:79K _panasonic

1.628. 2sc1359_e.pdf Size:55K _panasonic

1.629. 2sc1573.pdf Size:47K _panasonic

Transistor 2SC1573, 2SC1573A, 2SC1573B Silicon NPN triple diffusion planer type For high breakdown voltage general amplification Unit: mm For small TV video output 5.9� 0.2 4.9� 0.2 Complementary to 2SC1573 and 2SA879 Features High collector to emitter voltage VCEO. High transition frequency fT. Absolute Maximum Ratings (Ta=25?C) 0.7� 0.1 Parameter Symbol Ratings Unit 2.54� 0.15 2SC

1.630. 2sc1317_2sc1318.pdf Size:67K _panasonic

Transistors 2SC1317, 2SC1318 Silicon NPN epitaxial planer type Unit: mm For low-frequency power amplification and driver amplification 5.0�0.2 4.0�0.2 Complementary to 2SA719 and 2SA720 Features 0.7�0.1 � Low collector to emitter saturation voltage VCE(sat) � Complementary pair with 2SA719 and 2SA720 Absolute Maximum Ratings Ta = 25�C Parameter Symbol Rating Unit 0.45+0.15 �0.1 0.45

1.631. 2sc1518_e.pdf Size:51K _panasonic

Transistor 2SC1518 Silicon NPN epitaxial planer type For high-frequency bias oscillation of tape recorders Unit: mm For DC-DC converter 5.9� 0.2 4.9� 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances and high efficiency with a low-voltage power supply. 0.7� 0.1 2.54� 0.15 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings

1.632. 2sc1846.pdf Size:93K _panasonic

Power Transistors 2SC1846 Silicon NPN epitaxial planar type For medium output power amplification Unit: mm 8.0+0.5 �0.1 3.2�0.2 Complementary to 2SA0885 ? 3.16�0.1 � Features � Low collector-emitter saturation voltage VCE(sat) � Output of 3 W can be obtained by a complementary pair with 2SA0885 � TO-126B package which requires no insulation plate for installa- tion to the heat sink

1.633. 2sc1573_e.pdf Size:51K _panasonic

1.634. 2sc1980.pdf Size:37K _panasonic

Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Unit: mm Complementary to 2SA921 5.0� 0.2 4.0� 0.2 Features High collector to emitter voltage VCEO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V +0.2 +0.2 0.45 �0.1 0.45 �0.1 Collector to emitter voltage

1.635. 2sc1047.pdf Size:56K _panasonic

Transistor 2SC1047 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 5.0� 0.2 4.0� 0.2 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 �0.1 0.45 �0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20 V Emitter

1.636. 2sc1047_e.pdf Size:60K _panasonic

1.637. 2sc1215_e.pdf Size:58K _panasonic

Transistor 2SC1215 Silicon NPN epitaxial planer type For high-frequency (VHF band) amplification and oscillation Unit: mm 5.0� 0.2 4.0� 0.2 Features High transition frequency fT. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 �0.1 0.45 �0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20 V Emitter to base voltage VE

1.638. 2sc1980_e.pdf Size:41K _panasonic

1.639. 2sc1509.pdf Size:47K _panasonic

Transistor 2SC1509 Silicon NPN epitaxial planer type For low-frequency driver amplification Unit: mm Complementary to 2SA777 5.9� 0.2 4.9� 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.7� 0.1 2.54� 0.15 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VC

1.640. 2sc1473.pdf Size:47K _panasonic

1.641. 2sc1953_2sa914.pdf Size:78K _panasonic

1.642. 2sc1847.pdf Size:94K _panasonic

Power Transistors 2SC1847 Silicon NPN epitaxial planar type For medium output power amplification Unit: mm 8.0+0.5 �0.1 3.2�0.2 Complementary to 2SA0886 ? 3.16�0.1 � Features � Output of 4 W can be obtained by a complementary pair with 2SA0886 � TO-126B package which requires no insulation plate for installa- tion to the heat sink � Absolute Maximum Ratings Ta = 25�C Parameter Symb

1.643. 2sc1360_e.pdf Size:41K _panasonic

1.644. 2sc1518.pdf Size:47K _panasonic

1.645. 2sc1568.pdf Size:94K _panasonic

Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Unit: mm 8.0+0.5 �0.1 3.2�0.2 Complementary to 2SA0900 ? 3.16�0.1 � Features � Low collector-emitter saturation voltage VCE(sat) � Satisfactory operation performances and high efficiency with a low- voltage power supply � TO-126B package which incorporates a unique const

1.646. 2sc1215.pdf Size:62K _panasonic

1.647. 2sc1509_e.pdf Size:50K _panasonic

1.648. tc1550.pdf Size:415K _supertex

TC1550 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description > 500V breakdown voltage The Supertex TC1550 consists of a high voltage N-channel and > Independent N- and P-channels P-channel MOSFET in an 8-Lead SOIC package. This is an > Electrically isolated N- and P-channels enhancement-mode (normally-off) transistor utilizing an advanced > Low input capacitance

1.649. dtc143t.pdf Size:179K _utc

UNISONIC TECHNOLOGIES CO., LTD DTC143T NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lea

1.650. dtc143z.pdf Size:144K _utc

UNISONIC TECHNOLOGIES CO., LTD DTC143Z NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT-IN RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free

1.651. dtc113t.pdf Size:153K _utc

UNISONIC TECHNOLOGIES CO., LTD DTC113T NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lea

1.652. dtc124t.pdf Size:105K _utc

UNISONIC TECHNOLOGIES CO., LTD DTC124T NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. EQUIVALENT CIRCUIT ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead F

1.653. dtc143e.pdf Size:125K _utc

UNISONIC TECHNOLOGIES CO., LTD DTC143E NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR 3 3 3 (BUILT-IN RESISTORS) 1 1 1 2 2 2 ? FEATURES SOT-23 SOT-323 SOT-723 * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. ? EQUIVALENT CIRCUIT 1 TO-92 OUT R1 IN R2 GND OUT

1.654. dtc144e.pdf Size:150K _utc

UNISONIC TECHNOLOGIES CO., LTD DTC144E NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lea

1.655. 2sc1815.pdf Size:227K _utc

UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR ? FEATURES * Collector-Emitter voltage: BV =50V CEO * Collector current up to 150mA * High h linearity FE * Complimentary to UTC 2SA1015 ? SYMBOL ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2

1.656. dtc114e.pdf Size:155K _utc

UNISONIC TECHNOLOGIES CO., LTD DTC114E NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lea

1.657. 2sc1384.pdf Size:245K _utc

UNISONIC TECHNOLOGIES CO., LTD 2SC1384 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC1384 is power amplifier and driver. FEATURES * Low VCE(SAT) * 2~3W output in complementary pair with 2SA684 Lead-free: 2SC1384L Halogen-free: 2SC1384G ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating Halogen-Free 1 2

1.658. dtc114y.pdf Size:190K _utc

UNISONIC TECHNOLOGIES CO., LTD DTC114Y NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) ? FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. ? EQUIVALENT CIRCUIT ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lea

1.659. dtc123j.pdf Size:180K _utc

UNISONIC TECHNOLOGIES CO., LTD DTC123J NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT-IN RESISTORS) ? FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). * The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They al

1.660. dtc123e.pdf Size:83K _utc

UNISONIC TECHNOLOGIES CO., LTD DTC123E NPN SILICON TRANSISTOR DIGITAL TRANSISTORS (BUILT- IN RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halo

1.661. dtc115t.pdf Size:124K _utc

UNISONIC TECHNOLOGIES CO., LTD DTC115T NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. EQUIVALENT CIRCUIT ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead F

1.662. dtc144t.pdf Size:173K _utc

UNISONIC TECHNOLOGIES CO., LTD DTC144T NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. EQUIVALENT CIRCUIT ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead F

1.663. dtc143x.pdf Size:109K _utc

UNISONIC TECHNOLOGIES CO., LTD DTC143X NPN DIGITAL TRANSISTOR NPN DIGITAL TRANSISTOR 3 3 3 (BUILT-IN RESISTORS) 1 1 1 2 2 2 SOT-23 SOT-523 SOT-323 FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. 1 EQUIVALENT CIRCUIT TO-92 1 TO-92SP ORDERING INF

1.664. dtc115e.pdf Size:146K _utc

UNISONIC TECHNOLOGIES CO., LTD DTC115E NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lea

1.665. dtc114t.pdf Size:161K _utc

UNISONIC TECHNOLOGIES CO., LTD DTC114T NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lea

1.666. dtc124e.pdf Size:195K _utc

UNISONIC TECHNOLOGIES CO., DTC124E NPN EPITAXIAL SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT-IN RESISTORS) ? FEATURES *Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). *The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the inpu

1.667. dtc123y.pdf Size:141K _utc

UNISONIC TECHNOLOGIES CO., LTD DTC123Y NPN SILICON TRANSISTOR NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Nor

1.668. bc107_bc108_bc109_bc147_bc148_bc149.pdf Size:791K _aeg-telefunken

1.669. src1205s.pdf Size:241K _auk

SRC1205S NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT Features IN R1 IN • With built-in bias resistors COMMON • Simplify circuit design • Reduce a quantity of parts and R2 manufacturing process R1 R2 • High packing density 2.2K? 47K? COMMON Ordering Info

1.670. src1204uf.pdf Size:224K _auk

SRC1204UF NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT OUT • Interface circuit and driver circuit application IN R1 Features COMMON IN • With built-in bias resistors • Simplify circuit design R2 R1 R2 • Reduce a quantity of parts and manufacturing process 47K? 47K? • High packing density COMMON Ordering Inform

1.671. src1211m.pdf Size:150K _auk

SRC1211M NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application Features IN R1 • With built-in bias resistor • Simplify circuit design • Reduce a quantity of parts and R1 = 10K? 1 2 3 manufacturing process • High packing density COMMON Ordering Information Type NO. Marking

1.672. src1219.pdf Size:186K _auk

SRC1219 NPN Silicon Transistor PIN Connection Descriptions • Switching application 2. OUT • Interface circuit and driver circuit application Features 3. IN R1 • With built-in bias resistors 1 2 3 • Simplify circuit design • Reduce a quantity of parts and R2 manufacturing process R1 R2 • High packing density . 4.7K? 10K? 1. COMMON Ordering Info

1.673. src1207uf.pdf Size:222K _auk

SRC1207UF NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT OUT • Interface circuit and driver circuit application IN R1 Features COMMON IN • With built-in bias resistors • Simplify circuit design R2 R1 R2 • Reduce a quantity of parts and manufacturing process 10K? 47K? • High packing density COMMON Ordering Inform

1.674. src1205uf.pdf Size:222K _auk

SRC1205UF NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT OUT • Interface circuit and driver circuit application IN R1 Features COMMON IN • With built-in bias resistors • Simplify circuit design R2 R1 R2 • Reduce a quantity of parts and manufacturing process 2.2K? 47K? • High packing density COMMON SOT-323F Ord

1.675. src1202u.pdf Size:247K _auk

SRC1202U NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT IN R1 COMMON Features IN • With built-in bias resistors • Simplify circuit design R2 R1 R2 • Reduce a quantity of parts and manufacturing process 10K? 10K? • High packing density COMMON Ordering Informa

1.676. src1219ef.pdf Size:250K _auk

SRC1219EF NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT IN Features IN R1 COMMON • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and R2 manufacturing process R1 R2 • High packing density 4.7K? 10K? COMMON Ordering Infor

1.677. src1212ef.pdf Size:245K _auk

SRC1212EF NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT Features IN R1 • With built-in bias resistor IN • Simplify circuit design COMMON • Reduce a quantity of parts and R1 = 100K? manufacturing process • High packing density COMMON Ordering Information Type NO

1.678. src1211u.pdf Size:240K _auk

SRC1211U NPN Silicon Transistor PIN Connection Descriptions OUT • Switching application • Interface circuit and driver circuit application R1 IN Features OUT • With built-in bias resistor IN • Simplify circuit design COMMON • Reduce a quantity of parts and R1 = 10K? manufacturing process • High packing density COMMON Ordering Information Type

1.679. src1211e.pdf Size:222K _auk

SRC1211E NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application Features IN R1 OUT • With built-in bias resistor IN • Simplify circuit design COMMON • Reduce a quantity of parts and R1 = 10K? manufacturing process • High packing density COMMON Ordering Information Type NO.

1.680. stc128m.pdf Size:152K _auk

STC128M NPN Silicon Transistor Features PIN Connection • Low saturation medium current application • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability • Low on resistance : RON=0.6?(Max.) (IB=1mA) TO-92M Ordering Information Type NO. Marking Package Code STC128M C128

1.681. src1205m.pdf Size:154K _auk

SRC1205M NPN Silicon Transistor PIN Connection Descriptions • Switching application 2. OUT • Interface circuit and driver circuit application Features 3. IN R1 • With built-in bias resistors 1 2 3 • Simplify circuit design • Reduce a quantity of parts and R2 manufacturing process R1 R2 • High packing density 2.2K? 47K? 1. COMMON Ordering Informa

1.682. src1202s.pdf Size:244K _auk

SRC1202S NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT IN R1 IN Features COMMON • With built-in bias resistors • Simplify circuit design R2 • Reduce a quantity of parts and R1 R2 manufacturing process • High packing density 10K? 10K? COMMON Ordering Inform

1.683. stc128.pdf Size:174K _auk

STC128 NPN Silicon Transistor Features PIN Connection • Low saturation medium current application C • Extremely low collector saturation voltage • Suitable for low voltage large current drivers • High DC current gain and large current capability B • Low on resistance : RON=0.6?(Max.) (IB=1mA) E TO-92 Ordering Information Type NO. Marking Package Code STC1

1.684. src1201s.pdf Size:246K _auk

SRC1201S NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT Features IN R1 IN • With built-in bias resistors COMMON • Simplify circuit design • Reduce a quantity of parts and R2 manufacturing process R1 R2 • High packing density 4.7K? 4.7K? COMMON Ordering Inf

1.685. src1212.pdf Size:181K _auk

SRC1212 NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application Features IN R1 • With built-in bias resistor • Simplify circuit design • Reduce a quantity of parts and R1 = 100K? 1 2 3 manufacturing process • High packing density COMMON Ordering Information Type NO. Marking

1.686. src1211sf.pdf Size:250K _auk

SRC1211SF NPN Silicon Transistor PIN Connection Descriptions OUT • Switching application • Interface circuit and driver circuit application OUT Features IN R1 • With built-in bias resistor IN • Simplify circuit design • Reduce a quantity of parts and COMMON R1 = 10K? manufacturing process • High packing density COMMON Ordering Information Type

1.687. src1201m.pdf Size:158K _auk

SRC1201M NPN Silicon Transistor PIN Connection Descriptions • Switching application 2. OUT • Interface circuit and driver circuit application Features 3. IN R1 • With built-in bias resistors 1 2 3 • Simplify circuit design • Reduce a quantity of parts and R2 manufacturing process R1 R2 • High packing density 4.7K? 4.7K? 1. COMMON Ordering Inform

1.688. src1202.pdf Size:188K _auk

SRC1202 NPN Silicon Transistor PIN Connection Descriptions • Switching application 2. OUT • Interface circuit and driver circuit application Features 3. IN R1 • With built-in bias resistors 1 2 3 • Simplify circuit design • Reduce a quantity of parts and R2 manufacturing process R1 R2 • High packing density 10K? 10K? 1. COMMON Ordering Informati

1.689. src1204s.pdf Size:244K _auk

SRC1204S NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT Features IN R1 IN • With built-in bias resistors COMMON • Simplify circuit design • Reduce a quantity of parts and R2 manufacturing process R1 R2 • High packing density 47K? 47K? COMMON Ordering Inform

1.690. src1201ef.pdf Size:254K _auk

SRC1201EF NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT IN Features IN R1 COMMON • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and R2 manufacturing process R1 R2 • High packing density 4.7K? 4.7K? COMMON Ordering Info

1.691. src1207sf.pdf Size:255K _auk

SRC1207SF NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT IN Features IN R1 • With built-in bias resistors COMMON • Simplify circuit design • Reduce a quantity of parts and R2 manufacturing process R1 R2 • High packing density 10K? 47K? COMMON Ordering Inform

1.692. src1201.pdf Size:190K _auk

SRC1201 NPN Silicon Transistor PIN Connection Descriptions • Switching application 2. OUT • Interface circuit and driver circuit application Features 3. IN R1 • With built-in bias resistors 1 2 3 • Simplify circuit design • Reduce a quantity of parts and R2 manufacturing process R1 R2 • High packing density 4.7K? 4.7K? 1. COMMON Ordering Informa

1.693. src1202ef.pdf Size:252K _auk

SRC1202EF NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT IN Features IN R1 COMMON • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and R2 manufacturing process R1 R2 • High packing density 10K? 10K? COMMON Ordering Inform

1.694. src1208s.pdf Size:240K _auk

SRC1208S NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT Features R1 IN IN • With built-in bias resistors COMMON • Simplify circuit design R2 • Reduce a quantity of parts and R1 R2 manufacturing process • High packing density 22K? 47K? COMMON SOT-23 Orde

1.695. src1219e.pdf Size:226K _auk

SRC1219E NPN Silicon Transistor PIN Connection Descriptions OUT • Switching application • Interface circuit and driver circuit application OUT IN Features COMMON IN R1 • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and R1 R2 R2 manufacturing process • High packing density 4.7K? 10K? COMMON Ordering Informa

1.696. src1205.pdf Size:185K _auk

SRC1205 NPN Silicon Transistor PIN Connection Descriptions • Switching application 2. OUT • Interface circuit and driver circuit application Features 3. IN R1 • With built-in bias resistors 1 2 3 • Simplify circuit design • Reduce a quantity of parts and R2 manufacturing process R1 R2 • High packing density 2.2K? 47K? 1. COMMON Ordering Informat

1.697. src1212e.pdf Size:221K _auk

SRC1212E NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application Features IN R1 OUT • With built-in bias resistor IN • Simplify circuit design COMMON • Reduce a quantity of parts and R1 = 100K? manufacturing process • High packing density COMMON Ordering Information Type

1.698. src1210s.pdf Size:237K _auk

SRC1210S NPN Silicon Transistor PIN Connection Descriptions OUT • Switching application • Interface circuit and driver circuit application OUT Features IN R1 • With built-in bias resistor • Simplify circuit design IN • Reduce a quantity of parts and COMMON R1 = 4.7K? manufacturing process • High packing density COMMON Ordering Information Type N

1.699. src1211.pdf Size:182K _auk

SRC1211 NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application Features IN R1 • With built-in bias resistor • Simplify circuit design • Reduce a quantity of parts and R1 = 10K? 1 2 3 manufacturing process • High packing density COMMON Ordering Information Type NO. Marking

1.700. src1210uf.pdf Size:217K _auk

SRC1210UF NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT Features IN R1 IN • With built-in bias resistor • Simplify circuit design COMMON • Reduce a quantity of parts and R1 = 4.7K? manufacturing process • High packing density COMMON Ordering Information Type NO.

1.701. src1211uf.pdf Size:218K _auk

SRC1211UF NPN Silicon Transistor PIN Connection Descriptions OUT • Switching application • Interface circuit and driver circuit application OUT R1 IN Features IN • With built-in bias resistor • Simplify circuit design COMMON • Reduce a quantity of parts and R1 = 10K? manufacturing process • High packing density COMMON Ordering Information Ty

1.702. src1211ef.pdf Size:246K _auk

SRC1211EF NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application Features OUT IN R1 • With built-in bias resistor IN • Simplify circuit design • Reduce a quantity of parts and COMMON R1 = 10K? manufacturing process • High packing density COMMON Ordering Information Type N

1.703. src1203ef.pdf Size:251K _auk

SRC1203EF NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT IN Features IN R1 COMMON • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and R2 manufacturing process R1 R2 • High packing density 22K? 22K? COMMON Ordering Inform

1.704. src1206sf.pdf Size:253K _auk

SRC1206SF NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT IN Features IN R1 • With built-in bias resistors COMMON • Simplify circuit design • Reduce a quantity of parts and R2 manufacturing process R1 R2 • High packing density 4.7K? 47K? COMMON Ordering Info

1.705. src1203.pdf Size:187K _auk

SRC1203 NPN Silicon Transistor PIN Connection Descriptions • Switching application 2. OUT • Interface circuit and driver circuit application Features 3. IN R1 • With built-in bias resistors 1 2 3 • Simplify circuit design • Reduce a quantity of parts and R2 manufacturing process R1 R2 • High packing density 22K? 22K? 1. COMMON Ordering Informati

1.706. src1219sf.pdf Size:254K _auk

SRC1219SF NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT IN Features IN R1 • With built-in bias resistors COMMON • Simplify circuit design • Reduce a quantity of parts and R2 manufacturing process R1 R2 • High packing density 4.7K? 10K? COMMON Ordering Info

1.707. src1203m.pdf Size:155K _auk

SRC1203M NPN Silicon Transistor PIN Connection Descriptions • Switching application 2. OUT • Interface circuit and driver circuit application Features 3. IN R1 • With built-in bias resistors 1 2 3 • Simplify circuit design • Reduce a quantity of parts and R2 manufacturing process R1 R2 • High packing density 22K? 22K? 1. COMMON Ordering Informat

1.708. src1207u.pdf Size:245K _auk

SRC1207U NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT IN R1 COMMON Features IN • With built-in bias resistors • Simplify circuit design R2 R1 R2 • Reduce a quantity of parts and manufacturing process 10K? 47K? • High packing density COMMON Ordering Informa

1.709. src1219s.pdf Size:242K _auk

SRC1219S NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT Features IN R1 IN • With built-in bias resistors COMMON • Simplify circuit design • Reduce a quantity of parts and R2 manufacturing process R1 R2 • High packing density 4.7K? 10K? COMMON Ordering Info

1.710. src1203sf.pdf Size:255K _auk

SRC1203SF NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT IN Features R1 IN • With built-in bias resistors COMMON • Simplify circuit design R2 • Reduce a quantity of parts and R1 R2 manufacturing process • High packing density 22K? 22K? COMMON Ordering Info

1.711. src1203uf.pdf Size:223K _auk

SRC1203UF NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT OUT • Interface circuit and driver circuit application IN R1 Features COMMON IN • With built-in bias resistors • Simplify circuit design R2 R1 R2 • Reduce a quantity of parts and manufacturing process 22K? 22K? • High packing density COMMON SOT-323F Orde

1.712. src1207e.pdf Size:226K _auk

SRC1207E NPN Silicon Transistor PIN Connection Descriptions OUT • Switching application • Interface circuit and driver circuit application OUT IN Features COMMON IN R1 • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and R1 R2 R2 manufacturing process • High packing density 10K? 47K? COMMON Ordering Informat

1.713. src1202sf.pdf Size:257K _auk

SRC1202SF NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT IN Features IN R1 • With built-in bias resistors COMMON • Simplify circuit design • Reduce a quantity of parts and R2 manufacturing process R1 R2 • High packing density 10K? 10K? COMMON Ordering Infor

1.714. src1210ef.pdf Size:245K _auk

SRC1210EF NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT Features IN R1 • With built-in bias resistor IN • Simplify circuit design COMMON • Reduce a quantity of parts and R1 = 4.7K? manufacturing process • High packing density COMMON Ordering Information Type N

1.715. src1206uf.pdf Size:221K _auk

SRC1206UF NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT OUT • Interface circuit and driver circuit application IN R1 Features COMMON IN • With built-in bias resistors • Simplify circuit design R2 R1 R2 • Reduce a quantity of parts and manufacturing process 4.7K? 47K? • High packing density COMMON Ordering Infor

1.716. src1207.pdf Size:186K _auk

SRC1207 NPN Silicon Transistor PIN Connection Descriptions • Switching application 2. OUT • Interface circuit and driver circuit application Features 3. IN R1 • With built-in bias resistors 1 2 3 • Simplify circuit design • Reduce a quantity of parts and R2 manufacturing process R1 R2 • High packing density 10K? 47K? 1. COMMON Ordering Informati

1.717. src1205e.pdf Size:225K _auk

SRC1205E NPN Silicon Transistor PIN Connection Descriptions OUT • Switching application • Interface circuit and driver circuit application OUT IN Features COMMON IN R1 • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and R1 R2 R2 manufacturing process • High packing density 2.2K? 47K? COMMON Ordering Informa

1.718. src1203s.pdf Size:220K _auk

SRC1203S NPN Silicon Transistor Descriptions PIN Connection ? Switching application OUT ? Interface circuit and driver circuit application R1 IN Features OUT R2 ? With built-in bias resistors IN ? Simplify circuit design ? Reduce a quantity of parts and manufacturing COMMON COMMON process ? High packing density R1 R2 Ordering Information 22K? 22K? Type N

1.719. src1212s.pdf Size:237K _auk

SRC1212S NPN Silicon Transistor PIN Connection Descriptions OUT • Switching application • Interface circuit and driver circuit application OUT Features IN R1 • With built-in bias resistor • Simplify circuit design IN • Reduce a quantity of parts and COMMON R1 = 100K? manufacturing process • High packing density COMMON Ordering Information Type N

1.720. src1207m.pdf Size:155K _auk

SRC1207M NPN Silicon Transistor PIN Connection Descriptions • Switching application 2. OUT • Interface circuit and driver circuit application Features 3. IN R1 • With built-in bias resistors 1 2 3 • Simplify circuit design • Reduce a quantity of parts and R2 manufacturing process R1 R2 • High packing density 10K? 47K? 1. COMMON Ordering Informat

1.721. src1210e.pdf Size:221K _auk

SRC1210E NPN Silicon Transistor PIN Connection Descriptions OUT • Switching application • Interface circuit and driver circuit application Features IN R1 OUT • With built-in bias resistor IN • Simplify circuit design COMMON • Reduce a quantity of parts and R1 = 4.7K? manufacturing process • High packing density COMMON Ordering Information Type

1.722. src1212u.pdf Size:239K _auk

SRC1212U NPN Silicon Transistor PIN Connection Descriptions OUT • Switching application • Interface circuit and driver circuit application IN R1 Features OUT IN • With built-in bias resistor • Simplify circuit design COMMON • Reduce a quantity of parts and R1 = 100K? manufacturing process • High packing density COMMON Ordering Information Type N

1.723. src1202e.pdf Size:228K _auk

SRC1202E NPN Silicon Transistor PIN Connection Descriptions OUT • Switching application • Interface circuit and driver circuit application OUT IN Features COMMON IN R1 • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and R1 R2 R2 manufacturing process • High packing density 10K? 10K? COMMON Ordering Informat

1.724. src1204m.pdf Size:157K _auk

SRC1204M NPN Silicon Transistor PIN Connection Descriptions • Switching application 2. OUT • Interface circuit and driver circuit application Features 3. IN R1 • With built-in bias resistors 1 2 3 • Simplify circuit design • Reduce a quantity of parts and R2 manufacturing process R1 R2 • High packing density 47K? 47K? 1. COMMON Ordering Informat

1.725. src1212m.pdf Size:149K _auk

SRC1212M NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application Features IN R1 • With built-in bias resistor • Simplify circuit design • Reduce a quantity of parts and R1 = 100K? 1 2 3 manufacturing process • High packing density COMMON Ordering Information Type NO. Marking

1.726. src1212sf.pdf Size:249K _auk

SRC1212SF NPN Silicon Transistor PIN Connection Descriptions OUT • Switching application • Interface circuit and driver circuit application OUT Features IN R1 • With built-in bias resistor IN • Simplify circuit design • Reduce a quantity of parts and COMMON R1 = 100K? manufacturing process • High packing density COMMON Ordering Information Type

1.727. src1206m.pdf Size:153K _auk

SRC1206M NPN Silicon Transistor PIN Connection Descriptions • Switching application 2. OUT • Interface circuit and driver circuit application Features 3. IN R1 • With built-in bias resistors 1 2 3 • Simplify circuit design • Reduce a quantity of parts and R2 manufacturing process R1 R2 • High packing density 4.7K? 47K? 1. COMMON Ordering Informa

1.728. src1206ef.pdf Size:249K _auk

SRC1206EF NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT IN Features IN R1 COMMON • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and R2 manufacturing process R1 R2 • High packing density 4.7K? 47K? COMMON Ordering Inform

1.729. src1219m.pdf Size:154K _auk

SRC1219M NPN Silicon Transistor PIN Connection Descriptions • Switching application 2. OUT • Interface circuit and driver circuit application Features 3. IN R1 • With built-in bias resistors 1 2 3 • Simplify circuit design • Reduce a quantity of parts and R2 manufacturing process R1 R2 • High packing density 4.7K? 10K? 1. COMMON Ordering Informa

1.730. src1231s.pdf Size:256K _auk

SRC1231S NPN Silicon Transistor PIN Connection Descriptions COLLECTOR • Switching application • Interface circuit and driver circuit application R1 C BASE Features • With built-in bias resistor • Simplify circuit design B R1 = 2.2K? E • Reduce a quantity of parts and manufacturing process • High packing density EMITTER SOT-23 Ordering Informati

1.731. src1202uf.pdf Size:224K _auk

SRC1202UF NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT OUT • Interface circuit and driver circuit application IN R1 Features COMMON IN • With built-in bias resistors • Simplify circuit design R2 R1 R2 • Reduce a quantity of parts and manufacturing process 10K? 10K? • High packing density COMMON Ordering Inform

1.732. src1205u.pdf Size:244K _auk

SRC1205U NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT IN R1 COMMON Features IN • With built-in bias resistors • Simplify circuit design R2 R1 R2 • Reduce a quantity of parts and manufacturing process 2.2K? 47K? • High packing density COMMON Ordering Inform

1.733. src1207s.pdf Size:242K _auk

SRC1207S NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT Features IN R1 IN • With built-in bias resistors COMMON • Simplify circuit design • Reduce a quantity of parts and R2 manufacturing process R1 R2 • High packing density 10K? 47K? COMMON Ordering Infor

1.734. src1204.pdf Size:188K _auk

SRC1204 NPN Silicon Transistor PIN Connection Descriptions • Switching application 2. OUT • Interface circuit and driver circuit application Features 3. IN R1 • With built-in bias resistors 1 2 3 • Simplify circuit design • Reduce a quantity of parts and R2 manufacturing process R1 R2 • High packing density 47K? 47K? 1. COMMON Ordering Informati

1.735. src1204e.pdf Size:228K _auk

SRC1204E NPN Silicon Transistor PIN Connection Descriptions OUT • Switching application • Interface circuit and driver circuit application OUT IN Features COMMON IN R1 • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and R1 R2 R2 manufacturing process • High packing density 47K? 47K? COMMON Ordering Informat

1.736. src1202m.pdf Size:156K _auk

SRC1202M NPN Silicon Transistor PIN Connection Descriptions • Switching application 2. OUT • Interface circuit and driver circuit application Features 3. IN R1 • With built-in bias resistors 1 2 3 • Simplify circuit design • Reduce a quantity of parts and R2 manufacturing process R1 R2 • High packing density 10K? 10K? 1. COMMON Ordering Informat

1.737. src1204u.pdf Size:247K _auk

SRC1204U NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT IN R1 COMMON Features IN • With built-in bias resistors • Simplify circuit design R2 R1 R2 • Reduce a quantity of parts and manufacturing process 47K? 47K? • High packing density COMMON Ordering Informa

1.738. src1207ef.pdf Size:250K _auk

SRC1207EF NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT IN Features IN R1 COMMON • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and R2 manufacturing process R1 R2 • High packing density 10K? 47K? COMMON Ordering Inform

1.739. src1201sf.pdf Size:256K _auk

SRC1201SF NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT IN Features R1 IN • With built-in bias resistors COMMON • Simplify circuit design R2 • Reduce a quantity of parts and R1 R2 manufacturing process • High packing density 4.7K? 4.7K COMMON Ordering Info

1.740. src1206.pdf Size:185K _auk

SRC1206 NPN Silicon Transistor PIN Connection Descriptions • Switching application 2. OUT • Interface circuit and driver circuit application Features 3. IN R1 • With built-in bias resistors 1 2 3 • Simplify circuit design • Reduce a quantity of parts and R2 manufacturing process R1 R2 • High packing density 4.7K? 47K? 1. COMMON Ordering Informat

1.741. src1203u.pdf Size:245K _auk

SRC1203U NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT IN R1 COMMON Features IN • With built-in bias resistors • Simplify circuit design R2 R1 R2 • Reduce a quantity of parts and manufacturing process 22K? 22K? • High packing density COMMON Ordering Informa

1.742. src1210sf.pdf Size:250K _auk

SRC1210SF NPN Silicon Transistor PIN Connection Descriptions OUT • Switching application • Interface circuit and driver circuit application OUT Features IN R1 • With built-in bias resistor IN • Simplify circuit design • Reduce a quantity of parts and COMMON R1 = 4.7K? manufacturing process • High packing density COMMON Ordering Information Type

1.743. src1212uf.pdf Size:217K _auk

SRC1212UF NPN Silicon Transistor PIN Connection Descriptions OUT • Switching application • Interface circuit and driver circuit application OUT IN R1 Features • With built-in bias resistor IN • Simplify circuit design COMMON • Reduce a quantity of parts and R1 = 100K? manufacturing process • High packing density COMMON Ordering Information Type NO

1.744. src1206e.pdf Size:225K _auk

SRC1206E NPN Silicon Transistor PIN Connection Descriptions OUT • Switching application • Interface circuit and driver circuit application OUT IN Features COMMON IN R1 • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and R1 R2 R2 manufacturing process • High packing density 4.7K? 47K? COMMON Ordering Informa

1.745. src1219u.pdf Size:244K _auk

SRC1219U NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT IN R1 COMMON Features IN • With built-in bias resistors • Simplify circuit design R2 R1 R2 • Reduce a quantity of parts and manufacturing process 4.7K? 10K? • High packing density COMMON Ordering Inform

1.746. src1210.pdf Size:181K _auk

SRC1210 NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application Features IN R1 • With built-in bias resistor • Simplify circuit design • Reduce a quantity of parts and R1 = 4.7K? 1 2 3 manufacturing process • High packing density COMMON Ordering Information Type NO. Marking P

1.747. src1203e.pdf Size:227K _auk

SRC1203E NPN Silicon Transistor PIN Connection Descriptions OUT • Switching application • Interface circuit and driver circuit application OUT IN Features COMMON IN R1 • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and R1 R2 R2 manufacturing process • High packing density 22K? 22K? COMMON Ordering Informat

1.748. src1204ef.pdf Size:254K _auk

SRC1204EF NPN Silicon Transistor Descriptions PIN Connection • Switching application OUT • Interface circuit and driver circuit application R1 IN Features OUT R2 • With built-in bias resistors IN • Simplify circuit design • Reduce a quantity of parts and manufacturing COMMON COMMON process • High packing density R1 R2 Ordering Information 47K? 4

1.749. src1219uf.pdf Size:222K _auk

SRC1219UF NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT OUT • Interface circuit and driver circuit application IN R1 Features COMMON IN • With built-in bias resistors • Simplify circuit design R2 R1 R2 • Reduce a quantity of parts and manufacturing process 4.7K? 10K? • High packing density COMMON Ordering Infor

1.750. src1206s.pdf Size:241K _auk

SRC1206S NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT Features IN R1 IN • With built-in bias resistors COMMON • Simplify circuit design • Reduce a quantity of parts and R2 manufacturing process R1 R2 • High packing density 4.7K? 47K? COMMON Ordering Infor

1.751. src1211s.pdf Size:238K _auk

SRC1211S NPN Silicon Transistor PIN Connection Descriptions OUT • Switching application • Interface circuit and driver circuit application OUT Features IN R1 • With built-in bias resistor • Simplify circuit design IN • Reduce a quantity of parts and COMMON R1 = 10K? manufacturing process • High packing density COMMON Ordering Information Type N

1.752. src1204sf.pdf Size:257K _auk

SRC1204SF NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT IN Features IN R1 • With built-in bias resistors COMMON • Simplify circuit design • Reduce a quantity of parts and R2 manufacturing process R1 R2 • High packing density 47K? 47K? COMMON Ordering Inform

1.753. src1206u.pdf Size:243K _auk

SRC1206U NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT IN R1 COMMON Features IN • With built-in bias resistors • Simplify circuit design R2 R1 R2 • Reduce a quantity of parts and manufacturing process 4.7K? 47K? • High packing density COMMON Ordering Inform

1.754. src1201u.pdf Size:248K _auk

SRC1201U NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT Features IN IN R1 • With built-in bias resistors COMMON • Simplify circuit design • Reduce a quantity of parts and R2 manufacturing process R1 R2 • High packing density 4.7K? 4.7K? COMMON Ordering Infor

1.755. src1210u.pdf Size:240K _auk

SRC1210U NPN Silicon Transistor PIN Connection Descriptions OUT • Switching application • Interface circuit and driver circuit application IN R1 Features • With built-in bias resistor OUT • Simplify circuit design IN • Reduce a quantity of parts and COMMON R1 = 4.7K? manufacturing process • High packing density COMMON Ordering Information Type

1.756. src1210m.pdf Size:150K _auk

SRC1210M NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application Features IN R1 • With built-in bias resistor • Simplify circuit design • Reduce a quantity of parts and R1 = 4.7K? 1 2 3 manufacturing process • High packing density COMMON Ordering Information Type NO. Marking

1.757. src1205sf.pdf Size:254K _auk

SRC1205SF NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT IN Features IN R1 • With built-in bias resistors COMMON • Simplify circuit design • Reduce a quantity of parts and R2 manufacturing process R1 R2 • High packing density 2.2K? 47K? COMMON Ordering Infor

1.758. src1205ef.pdf Size:249K _auk

SRC1205EF NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT IN Features IN R1 COMMON • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and R2 manufacturing process R1 R2 • High packing density 2.2K? 47K? COMMON Ordering Infor

1.759. src1201e.pdf Size:230K _auk

SRC1201E NPN Silicon Transistor PIN Connection Descriptions OUT • Switching application • Interface circuit and driver circuit application OUT IN Features COMMON IN R1 • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and R1 R2 R2 manufacturing process • High packing density 4.7K? 4.7K? COMMON Ordering Inform

1.760. src1201uf.pdf Size:226K _auk

SRC1201UF NPN Silicon Transistor PIN Connection Descriptions • Switching application OUT OUT • Interface circuit and driver circuit application IN R1 Features COMMON IN • With built-in bias resistors • Simplify circuit design R2 R1 R2 • Reduce a quantity of parts and manufacturing process 4.7K? 4.7K? • High packing density COMMON Ordering Info

1.761. bc177-a-b.pdf Size:70K _comset

PNP BC177,A,B LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC177,A,B are silicon planar epitaxial PNP transistors mounted in TO-18 metal package. They are suitable for use in drive audio stages, low-noise input audio stages and as low power, high gain general purpose transistors. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratin

1.762. mbc13900.pdf Size:691K _freescale

Document Number: MBC13900/D Freescale Semiconductor Rev. 1.1, 06/2005 Technical Data MBC13900 (Scale 2:1) Package Information Plastic Package Case 318M MBC13900 (SOT-343) NPN Silicon Low Noise Transistor Ordering Information Device Marking or Device Operating Package Temperature Range MBC13900T11 900 SOT-343 MBC13900NT11 90N SOT-343 1 See Table 1. Contents 1 Introduction 1 I

1.763. itc14410.pdf Size:98K _gec_plessey

JULY 1996 IT14410012D PRELIMINARY DATA DS4372-2.6 ITC14410012D POWERLINE N-CHANNEL IGBT CHIP FEATURES TYPICAL KEY PARAMETERS (25?C) VCES 1200V n - Channel. IC(CONT) 100A Enhancement Mode. VCE(sat) 2.8V High Input Impedance. High Switching Speed. Latch-Free Operation. Low Forward Voltage Drop. Short Circuit Capability (10�s). RATINGS Symbol Parameter Test Conditions Max. Un

1.764. itc14415.pdf Size:100K _gec_plessey

JULY 1996 ITC14415006D PRELIMINARY DATA DS4393-2.6 ITC14415006D POWERLINE N-CHANNEL IGBT CHIP FEATURES TYPICAL KEY PARAMETERS (25?C) VCES 600V n - Channel. IC(CONT) 150A Enhancement Mode. VCE(sat) 2.3V High Input Impedance. High Switching Speed. Latch-Free Operation. Low Forward Voltage Drop. Short Circuit Capability (10�s). RATINGS Symbol Parameter Test Conditions Max. Un

1.765. itc14407.pdf Size:98K _gec_plessey

JULY 1996 ITC14407516D PRELIMINARY DATA DS4580-1.4 ITC14407516D POWERLINE N-CHANNEL IGBT CHIP FEATURES TYPICAL KEY PARAMETERS (25?C) VCES 1600V n - Channel. IC(CONT) 75A Enhancement Mode. VCE(sat) 3.3V High Input Impedance. High Switching Speed. Latch-Free Operation. Low Forward Voltage Drop. Short Circuit Capability (10�s). RATINGS Symbol Parameter Test Conditions Max. Un

1.766. hgtp10n40c1d_hgtp10n40e1d_hgtp10n50c1d_hgtp10n50e1d.pdf Size:47K _harris_semi

HGTP10N40C1D, HGTP10N40E1D, S E M I C O N D U C T O R HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB � 10A, 400V and 500V � VCE(ON): 2.5V Max. EMITTER COLLECTOR � TFALL: 1�s, 0.5�s GATE � Low On-State Voltage COLLECTOR � Fast Switching Speeds (FLANGE) � High Input Impedance � Anti-Paral

1.767. 2sc1921.pdf Size:30K _hitachi

2SC1921 Silicon NPN Triple Diffused Application � High frequency high voltage amplifier � Video output Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SC1921 Absolute Maximum Ratings (Ta = 25�C) Item Symbol Ratings Unit Collector to base voltage VCBO 250 V Collector to emitter voltage VCEO 200 V Emitter to base voltage VEBO 5V Collector current IC 50 mA Collector power

1.768. 2sc1706.pdf Size:49K _hitachi

1.769. 2sc1514.pdf Size:43K _hitachi

1.770. 2sc1162.pdf Size:29K _hitachi

2SC1162 Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SA715 Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25�C) Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 5V Collector current IC 2.5 A Collector peak current IC(

1.771. 2sc1881.pdf Size:35K _hitachi

2SC1881(K) Silicon NPN Triple Diffused Application High gain amplifier power switching Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 1 3. Emitter 6.8 k? 400 ? 2 3 (Typ) (Typ) 3 Absolute Maximum Ratings (Ta = 25�C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7V Collector current IC 3A Co

1.772. 2sc1212.pdf Size:29K _hitachi

2SC1212, 2SC1212A Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25�C) Ratings Item Symbol 2SC1212 2SC1212A Unit Collector to base voltage VCBO 50 80 V Collector to emitter voltage VCEO 50 80 V Emitter to base voltage VEBO 44V Collector current IC 11A Collector power dissipat

1.773. 2sc1890.pdf Size:24K _hitachi

2SC1890, 2SC1890A Silicon NPN Epitaxial Application � Low frequency high voltage amplifier � Complementary pair with 2SA893/A Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1890, 2SC1890A Absolute Maximum Ratings (Ta = 25�C) Ratings Item Symbol 2SC1890 2SC1890A Unit Collector to base voltage VCBO 90 120 V Collector to emitter voltage VCEO 90 120 V Emitter to base vo

1.774. 2sc1942.pdf Size:39K _hitachi

1.775. 2sc1906.pdf Size:43K _hitachi

2SC1906 Silicon NPN Epitaxial Planar ADE-208-1058 (Z) 1st. Edition Mar. 2001 Application � VHF amplifier � Mixer, Local oscillator Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1906 Absolute Maximum Ratings (Ta = 25�C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 19 V Emitter to base voltage VEBO 2V Collector cur

1.776. 2sc1775.pdf Size:36K _hitachi

2SC1775, 2SC1775A Silicon NPN Epitaxial Application � Low frequency low noise amplifier � Complementary pair with 2SA872/A Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1775, 2SC1775A Absolute Maximum Ratings (Ta = 25�C) Item Symbol 2SC1775 2SC1775A Unit Collector to base voltage VCBO 90 120 V Collector to emitter voltage VCEO 90 120 V Emitter to base voltage VEBO 5

1.777. 2sc1515.pdf Size:28K _hitachi

2SC1515(K) Silicon NPN Triple Diffused Application High voltage switching Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1515 (K) Absolute Maximum Ratings (Ta = 25�C) Item Symbol Ratings Unit Collector to base voltage VCBO 200 V Collector to emitter voltage VCES 200 V VCEO 150 V Emitter to base voltage VEBO 5V Collector current IC 50 mA Collector power dissipation

1.778. 2sc1907.pdf Size:39K _hitachi

2SC1907 Silicon NPN Epitaxial Planar Application UHF TV Tuner, Local oscillator Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1907 Absolute Maximum Ratings (Ta = 25�C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 19 V Emitter to base voltage VEBO 2V Collector current IC 50 mA Emitter current IE �50 mA Collector pow

1.779. 2sc1342.pdf Size:52K _hitachi

2SC1342 Silicon NPN Epitaxial Planar Application � VHF amplifier, mixer � Local oscollator Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1342 Absolute Maximum Ratings (Ta = 25�C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 4V Collector current IC 30 mA Collector power dissipation

1.780. 2sc1781h.pdf Size:43K _hitachi

1.781. 2sc1344_2sc1345.pdf Size:40K _hitachi

2SC1344, 2SC1345 Silicon NPN Epitaxial Application Low frequency low noise amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1344, 2SC1345 Absolute Maximum Ratings (Ta = 25�C) Item Symbol 2SC1344 2SC1345 Unit Collector to base voltage VCBO 30 55 V Collector to emitter voltage VCEO 30 50 V Emitter to base voltage VEBO 55V Collector current IC 100 100 mA Collec

1.782. 2sc1214.pdf Size:22K _hitachi

2SC1214 Silicon NPN Epitaxial ADE-208-1050 (Z) 1st. Edition Mar. 2001 Application Low frequency amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1214 Absolute Maximum Ratings (Ta = 25�C) Item Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 4V Collector current IC 500 mA Collector

1.783. 2sc1707ah.pdf Size:61K _hitachi

1.784. 2sc1345.pdf Size:43K _hitachi

2SC1345(K) Silicon NPN Epitaxial Application Low frequency low noise amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1345 (K) Absolute Maximum Ratings (Ta = 25�C) Item Symbol Ratings Unit Collector to base voltage VCBO 55 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Collector power dissipation PC 200 m

1.785. 2sc1472.pdf Size:47K _hitachi

2SC1472(K) Silicon NPN Epitaxial, Darlington Application High gain amplifier Outline TO-92 (1) 3 2 1. Emitter 1 2. Collector 3. Base 3 2 1 2SC1472 (K) Absolute Maximum Ratings (Ta = 25�C) Item Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 10 V Collector current IC 300 mA Collector peak current iC(p

1.786. 2sc1213.pdf Size:23K _hitachi

2SC1213, 2SC1213A Silicon NPN Epitaxial Application � Low frequency amplifier � Complementary pair with 2SA673 and 2SA673A Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1213, 2SC1213A Absolute Maximum Ratings (Ta = 25�C) Item Symbol 2SC1213 2SC1213A Unit Collector to base voltage VCBO 35 50 V Collector to emitter voltage VCEO 35 50 V Emitter to base voltage VEBO 44V

1.787. 2sc1947.pdf Size:126K _mitsubishi

1.788. 2sc1971.pdf Size:121K _mitsubishi

1.789. 2sc1945.pdf Size:132K _mitsubishi

1.790. 2sc1969.pdf Size:145K _mitsubishi

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1.792. 2sc1972.pdf Size:130K _mitsubishi

1.793. 2sc1944.pdf Size:54K _mitsubishi

1.794. 2sc1324.pdf Size:154K _mitsubishi

1.795. 2sc1946.pdf Size:130K _mitsubishi

1.796. 2sc1970.pdf Size:154K _mitsubishi

1.797. 2sc1966.pdf Size:125K _mitsubishi

1.798. 2sc1968a.pdf Size:132K _mitsubishi

1.799. 2sc1967.pdf Size:205K _mitsubishi

1.800. 2sc1358.pdf Size:112K _mospec

A A A

1.801. 2sc1325.pdf Size:112K _mospec

A A A

1.802. 2sc1061.pdf Size:110K _mospec

A A A

1.803. 2sc1875.pdf Size:111K _mospec

A A A

1.804. 2sc1426.pdf Size:340K _no

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1.833. 2sc1723.pdf Size:54K _no

1.834. 2sc1505_1.pdf Size:90K _savantic

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1505 DESCRIPTION �With TO-220 package �High collector-emitter voltage : VCEO=300V �High frequency:fT=40MHz(Min) APPLICATIONS �For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simpli

1.835. 2sc1520.pdf Size:100K _savantic

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1520 DESCRIPTION �With TO-202 package �High voltage �High transition frequency APPLICATIONS �For color TV chroma output and video output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratings (Ta=25 )

1.836. bc177dcsm.pdf Size:10K _semelab

BC177DCSM Dimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 ± 0.15 2.29 ± 0.20 1.65 ± 0.13 (0.055 ± 0.006) (0.09 ± 0.008) (0.065 ± 0.005) Applications 2 3 1 4 Dual Bipolar PNP Devices. A 0.23 6 5 rad. (0.009) V = 45V CEO 6.22 ± 0.13 A = 1.27 ± 0.13 I = 0.1A C (0.05

1.837. bc109dcsm.pdf Size:155K _semelab

SILICON EPITAXIAL NPN TRANSISTOR BC109DCSM • Dual Silicon Planar NPN Transistors • Hermetic Ceramic Surface Mount Package • Designed For Low Noise General Purpose Amplifiers, Driver Stages and Signal Processing Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) Each Side Total Device VCBO Collector – Base Vol

1.838. sml50c15.pdf Size:20K _semelab

SML50C15 TO–254 Package Outline. Dimensions in mm (inches) 13.59 (0.535) 6.32 (0.249) N–CHANNEL 13.84 (0.545) 6.60 (0.260) 3.53 (0.139) 1.02 (0.040) Dia. 3.78 (0.149) 1.27 (0.050) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS 500V 1 2 3 ID(cont) 15A RDS(on) 0.270 0.89 (0.035) • Faster Switching 1.14 (0.045) 3.81 (0.150) 3.81 (0.150) BSC • Lower Leakage BSC •

1.839. bc108dcsm.pdf Size:10K _semelab

BC108DCSM Dimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 ± 0.15 2.29 ± 0.20 1.65 ± 0.13 (0.055 ± 0.006) (0.09 ± 0.008) (0.065 ± 0.005) Applications 2 3 1 4 Dual Bipolar NPN Devices. A 0.23 6 5 rad. (0.009) V = 20V CEO 6.22 ± 0.13 A = 1.27 ± 0.13 I = 0.1A C (0.05

1.840. bc107dcsm.pdf Size:10K _semelab

BC107DCSM Dimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 ± 0.15 2.29 ± 0.20 1.65 ± 0.13 (0.055 ± 0.006) (0.09 ± 0.008) (0.065 ± 0.005) Applications 2 3 1 4 Dual Bipolar NPN Devices. A 0.23 6 5 rad. (0.009) V = 45V CEO 6.22 ± 0.13 A = 1.27 ± 0.13 I = 0.1A C (0.05

1.841. bc177csm.pdf Size:11K _semelab

BC177CSM Dimensions in mm (inches). Bipolar PNP Device in a 0.51 ± 0.10 Hermetically sealed LCC1 (0.02 ± 0.004) 0.31 rad. (0.012) Ceramic Surface Mount 3 Package for High Reliability Applications 21 1.91 ± 0.10 (0.075 ± 0.004) A 0.31 rad. Bipolar PNP Device. (0.012) 3.05 ± 0.13 (0.12 ± 0.005) 1.40 (0.055) 1.02 ± 0.10 max. VCEO = 45V A = (0.04 ± 0.004)

1.842. 2sc1728_2sc1760.pdf Size:375K _sony

1.843. 2sc1034.pdf Size:453K _sony

1.844. 2sc1816.pdf Size:217K _sony

1.845. 2sc1817.pdf Size:137K _sony

1.846. 2sc1810.pdf Size:293K _sony

1.847. c1815.pdf Size:174K _secos

C1815 200 mW, 150 mA, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE A L Power Dissipation 3 3 Top View C B 1 1 2 2 K E Collector MARKING: HF 3 D H J F G 1 Base Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.04 G - 0.18 2 B 2.1

1.848. 2sc1623k.pdf Size:492K _secos

2SC1623K 0.1A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE High DC current gain :hFE=200(Typ), VCE=6V, IC=1mA. A L High Voltage:VCEO=50V. 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 2 K E Product-Rank 2SC1623K-P 2SC1623K-Y 2SC1623K-G 2SC1623K-B Range 90~180

1.849. 2sc1213-2sc1213a.pdf Size:277K _secos

2SC1213, 2SC1213A NPN General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES TO-92 Low frequency amplifier G H Complementary pair with 2SA673 and 2SA673A 1Emitter 1 1 1 2Collector 2 2 2 3Base 3 3 3 CLASSIFICATION OF hFE(1) J A D Product-Rank 2SC1213-B 2SC1213-C 2SC1213-D Mil

1.850. 2sc1162.pdf Size:392K _secos

2SC1162 2.5A , 35V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-126 ? Low frequency power amplifier ?Emitter ?Collector ?Base CLASSIFICATION OF hFE (1) Product-Rank 2SC1162-B 2SC1162-C 2SC1162-D A B E Range 60~120 100~200 160~320 F C N H L M K D J G Collector

1.851. 2sc1675.pdf Size:77K _secos

2SC1675 0.05 A , 50 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 ? Low Collector Current G H ? General Purpose Switching and Amplification ?Emitter ?Base J ?Collector A D CLASSIFICATION OF hFE Millimeter B REF. Min. Max. Product-Rank 2SC1675-R 2SC1675-O 2SC1675

1.852. bc184.pdf Size:215K _secos

BC184 0.1 A, 45 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES The BC184 is complementary silicon planar epitaxial transistors G H for use in AF small signal amplifiers and drivers, as well as for low noise pre-amplifiers applications. Both types feature good linearity o

1.853. 2sc1923.pdf Size:92K _secos

2SC1923 0.02A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES A D ? General purpose switching and amplification. B CLASSIFICATION OF hFE Product-Rank 2SC1923-O 2SC1923-Y E C F Range 70~140 100~200 G H ?Emitter MARKING ?Collector ?Base J C1923 Millimeter

1.854. dtc113z series.pdf Size:221K _secos

DTC113ZE/DTC113ZUA/DTC113ZKA /DTC113ZCA/DTC113ZSA Elektronische Bauelemente Digital Transistors NPN (Built-in Resistors) FEATURES * Built-in bias resistors enable the configuration of an in verter circuit without connecting external input resistors (see equivalent circuit). * Only the on/off con fitions need to be set for operation making device design easy. * The bias resistors cons

1.855. dtc144e series.pdf Size:213K _secos

DTC144EE / DTC144EUA DTC144ECA / DTC144ESA / DTC144EM NPN Digital Transistors (Built-in Resistors) Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES DTC144EE (SOT-523) DTC144EUA (SOT-323) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent

1.856. 2sc1383l-1384l.pdf Size:669K _secos

2SC1383L / 2SC1384L NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92L FEATURE G H Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA683 and 2SA684. 1Emitter 1 1 1 J 2Collector 2 2 2 3Base 3 3 3 A D CLASSIFICATION OF hFE(1) Millim

1.857. dtc123y series.pdf Size:134K _secos

DTC123YE / DTC123YUA / DTC123YCA NPN Digital Transistors (Built-in Resistors) Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES DTC123YE (SOT-523) DTC123YUA (SOT-323)? ? Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). ? The bia

1.858. dtc124e series.pdf Size:245K _secos

DTC124EE/DTC124EUA/DTC124EKA DTC124ECA/TC124ESA Elektronische Bauelemente NPN Digital Transistors (Built-in Resistors) FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting input resistors (see equivalent circuit). * Only the on/off confitions need to be set for operation, making device design easy. * The bias resistors consis of thin-film

1.859. dtc114y.pdf Size:223K _secos

DTC114YE / DTC114YUA DTC114YCA / DTC114YSA NPN Digital Transistors (Built-in Resistors) Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES DTC114YE (SOT-523) DTC114YUA (SOT-323)? ? Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).

1.860. dtc144t series.pdf Size:71K _secos

DTC144TE / DTC144TUA DTC144TCA / DTC144TSA / DTC144TM NPN Digital Transistors (Built-in Resistors) Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES DTC144TE (SOT-523) DTC144TUA (SOT-323) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent

1.861. 2sc1654.pdf Size:433K _secos

2SC1654 0.05A , 180V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE ? High Frequency Power Amplifier Application A L ? Power Switching Applications 3 3 Top View C B CLASSIFICATION OF hFE(1) 1 1 2 2 K E Product-Rank 2SC1654-N5 2SC1654-N6 2SC1654-N7 Range 90~180 135~270

1.862. 2sc1959.pdf Size:607K _secos

2SC1959 0.5 A , 35 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES ? Excellent hFE Linearity ? High Transition Frequency Millimeter REF. Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - CLASSIFICATION OF hFE D 3.30 3.81 E 0.36 0.56 Product-Rank 2SC1959-O 2SC1959-Y 2SC19

1.863. dtc143x series.pdf Size:150K _secos

DTC143XE / DTC143XUA DTC143XCA / DTC143XSA / DTC143XM NPN Digital Transistors (Built-in Resistors) Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES DTC143XE (SOT-523) DTC143XUA (SOT-323) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent c

1.864. dtc143t series.pdf Size:123K _secos

DTC143TE / DTC143TUA DTC143TCA / DTC143TSA / DTC143TM NPN Digital Transistors (Built-in Resistors) Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES DTC143TE (SOT-523) DTC143TUA (SOT-323) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent

1.865. c1815t.pdf Size:393K _secos

C1815T 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H ? Power Dissipation ?Emitter CLASSIFICATION OF hFE (1) J ?Collector ?Base A D Product-Rank C1815T-O C1815T-Y C1815T-GR Millimeter REF. B Min. Max. Range 70~140 120~240 200~400 A 4.40 4.70 K B 4

1.866. dtc114w series.pdf Size:381K _secos

DTC114WE/DTC114WUA/DTC114WKA DTC114WCA/TC114WSA Elektronische Bauelemente NPN Digital Transistors (Built-in Resistors) FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting input resistors (see equivalent circuit). * Only the on/off confitions need to be set for operation, making device design easy. * The bias resistors consis of thin-film

1.867. dtc143z series.pdf Size:348K _secos

DTC143ZE / DTC143ZUA DTC143ZCA / DTC143ZSA / DTC143ZM NPN Digital Transistors (Built-in Resistors) Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES DTC143ZE (SOT-523) DTC143ZUA (SOT-323) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent

1.868. dtc143e series.pdf Size:136K _secos

DTC143EE / DTC143EUA DTC143ECA / DTC143ESA NPN Digital Transistors (Built-in Resistors) Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES DTC143EE (SOT-523) DTC143EUA (SOT-323)? ? Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).

1.869. 2sc1674.pdf Size:78K _secos

2SC1674 0.02 A , 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 ? General Purpose Switching and Amplification G H ?Emitter ?Collector ?Base J CLASSIFICATION OF hFE A D Millimeter REF. Min. Max. Product-Rank 2SC1674-Y 2SC1674-GR 2SC1674-BL B A 4.40 4.70 B 4.30

1.870. 2sc1008.pdf Size:78K _secos

2SC1008 0.7A , 80 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES ? General Purpose Switching and Amplification. G H ?Emitter ?Base ?Collector J CLASSIFICATION OF hFE A D Millimeter REF. Min. Max. Product-Rank 2SC1008-R 2SC1008-Q 2SC1008-Y 2SC1008-G B A 4.40 4.70

1.871. 2sc1318a.pdf Size:130K _secos

2SC1318A 0.5 A, 80 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES ? Collector output capacitance: Cob=11 pF (TYP), 20 pF (MAX) G H ?Emitter ?Collector ?Base J CLASSIFICATION OF hFE(1) A D Product-Rank 2SC1318A-Q 2SC1318A-R 2SC1318A-S Millimeter REF. B Min. Max

1.872. 2sc1740s.pdf Size:294K _secos

2SC1740S 0.15A , 60V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92S Low Cob CLASSIFICATION OF hFE Millimeter REF. Min. Max. A 3.90 4.10 Product-Rank 2SC1740S-Q 2SC1740S-R 2SC1740S-S B 3.05 3.25 C 1.42 1.62 Range 120~270 180~390 270~560 D 15.1 15.5 E 2.97 3

1.873. dtc114t series.pdf Size:199K _secos

DTC114TE/DTC114TUA/DTC114TKA DTC114TCA/TC114TSA Elektronische Bauelemente NPN Digital Transistors (Built-in Resistors) FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting input resistors * Only the on/off confitions need to be set for operation, making device design easy. * The bias resistors consis of thin-film resistors with compete iso

1.874. 2sc1318.pdf Size:450K _secos

2SC1318 0.5 A, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES ? Low Collector to Emitter Saturation Voltage VCE(sat) Millimeter ? Complementary Pair with 2SA720 REF. Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 CLASSIFICATION OF

1.875. dtc123j series.pdf Size:347K _secos

DTC123JE/DTC123JUA/DTC123JKA DTC123JCA/TC123JSA Elektronische Bauelemente NPN Digital Transistors (Built-in Resistors) FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting input resistors (see equivalent circuit). * Only the on/off confitions need to be set for operation, making device design easy. * The bias resistors consis of thin-film

1.876. 2sc1172.pdf Size:69K _wingshing

NPN TRIPLE DIFFUSED 2SC1172 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS (No Damper Diode) TO-3 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector Current (D

1.877. 2sc1413a.pdf Size:30K _wingshing

NPN TRIPLE DIFFUSED 2SC1413A PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(No Damper Diode) TO-3 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (Ta=25�C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector Current (DC)

1.878. 2sc1827.pdf Size:69K _wingshing

2SC1827 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SA769 ABSOLUTE MAXIMUM RATINGS (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 4 A Collector Dissipation (Tc=25? PC 30 W ? ? ? Junction Temperature Tj 15

1.879. 2sc1050.pdf Size:188K _wingshing

Silicon Epitaxial Planar Transistor 2SC1050 GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose TO-3 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 300 V Collector-emitter voltage (open base) VCEO - 250 V Collector current (DC

1.880. 2sc1454.pdf Size:66K _wingshing

2SC1454 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-3 ABSOLUTE MAXIMUM RATINGS (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 250 V Emitter-Base voltage VEBO 7 V Collector Current (DC) IC 40 A Collector Dissipation (Tc=25? PC 50 W ? ? ? Junction Temperature Tj 150 ? ? ? ? Storag

1.881. 2sc1983.pdf Size:64K _wingshing

2SC1983 NPN SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS SC-65 ABSOLUTE MAXIMUM RATINGS (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 60 V Collector Current (DC) IC 3 A Collector Dissipation (Tc=25? PC 30 W ? ? ? Junction Temperature Tj 150 ? ? ? ? ? Stora

1.882. bc157vi-a_bc158vi-a-b_bc159a-b_bc177v-vi-a-b_bc178v-vi-a-b_bc179a-b_kc307a-b-v_kc308a-b-c_kc309f-b-c_kc636_kc638_kc640_kf423_kf470_kf517.pdf Size:144K _tesla

1.883. gc520-k_gc521-k_gc522-k_bc413b-c_kc147_kc148_kc149_kc237a-b-v_kc238a-b-c_kc239f-b-c_kc507_kc508_kc509_kc635_kc637_kc639.pdf Size:148K _tesla

1.884. ac128.pdf Size:557K _valvo

1.885. inc5004ac1.pdf Size:230K _isahaya

INC5004AC1 PRELIMINARY Notice：This is not a final specification FOR HIGH CURRENT DRIVE APPLICATION Some parametric are subject to change. SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT：mm 2.8 INC5004AC1 is a silicon NPN epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE ① ・Super mini

1.886. ina5002ac1.pdf Size:232K _isahaya

INA5002AC1 PRELIMINARY Notice：This is not a final specification FOR LOW FREQUENCY AMPLIFY APPLICATION Some parametric are subject to change. SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT：mm 2.8 INA5002AC1 is a silicon PNP epitaxial transistor designed for 0.65 1.5 0.65 relay drive or Power supply application. FEATURE ① ・Super mini package for

1.887. ina6002ac1.pdf Size:144K _isahaya

INA6002AC1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCLIPTION OUTLINE DRAWING Unit：mm INA6002AC1 is a silicon PNP epitaxial type transistor. 2.8 0.65 1.5 0.65 It is designed with high voltage. FEATURE (1) ・Super mini package for easy mounting. (3) (2) ・Hige voltage VCEO=-300V APPLICATION DC/DC convertor, High vol

1.888. inc6005ac1.pdf Size:132K _isahaya

INC6005AC1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT：mm 2.8 INC6005AC1 is a silicon NPN transistor. 0.65 1.5 0.65 It is designed with high voltage. FEATURE ① ・Super mini package for easy mounting ・High voltage VCEO=400V ② ③ APPLICATION DC/DC convertor, High voltage switching Terminal Connector JE

1.889. inc6002ac1.pdf Size:142K _isahaya

INC6002AC1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN TRANSISTOR DESCLIPTION OUTLINE DRAWING Unit：mm 2.8 INC6002AC1 is a silicon NPN transistor. 0.65 1.5 0.65 It is designed with high voltage. (1) FEATURE ・Super mini package for easy mounting. (3) (2) ・Hige voltage VCEO=300V APPLICATION DC/DC convertor, High voltage switching

1.890. ina1001ac1.pdf Size:107K _isahaya

INA1001AC1 PRELIMINARY Notice：This is not a final specification FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION Some parametric are subject to change. SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT：mm 2.8 INA1001AC1 is a silicon PNP epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE ① �

1.891. isa1530ac1_isa1603ac1.pdf Size:164K _isahaya

〈SMALL-SIGNAL TRANSISTOR〉 ISA1530AC1 ISA1603AM1 . FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING UNIT：mm DESCRIPTION ISA1530AC1 ISA1603AM1 is super mini ISA1530AC1 ISA1603AM1 package resin sealed silicon PNP epitaxial type transistor. 2.1 2.8 These are designed for low frequency voltage 0.425 1.25 0.425 1.5 0.65 0.65 amplify appli

1.892. inc6008ac1.pdf Size:106K _isahaya

INC6008AC1 PRELIMINARY Notice：This is not a final specification FOR HIGH CURRENT DRIVE APPLICATION Some parametric are subject to change. SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT：mm 2.8 INC6008AC1 is a silicon NPN epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE ① ・Super mini pack

1.893. ina5001ac1.pdf Size:106K _isahaya

1.894. ina5006ac1.pdf Size:132K _isahaya

INA5006AC1 PRELIMINARY Notice：This is not a final specification FOR HIGH CURRENT DRIVE APPLICATION Some parametric are subject to change. SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT：mm 2.8 INA5006AC1 is a silicon PNP epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE ① ・Super mini pack

1.895. inc1001ac1.pdf Size:119K _isahaya

INC1001AC1 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT：mm 2.8 INC1001AC1 is a silicon NPN epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE ① ・Super mini package for easy mounting ・High collector current(IC=500mA) ② ③ ・Low coll

1.896. ina5005ac1.pdf Size:106K _isahaya

INA5005AC1 PRELIMINARY Notice：This is not a final specification FOR HIGH CURRENT DRIVE APPLICATION Some parametric are subject to change. SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT：mm 2.8 INA5005AC1 is a silicon PNP epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE ① ・Super mini pack

1.897. ina6005ac1.pdf Size:107K _isahaya

INA6005AC1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT：mm 2.8 INA6005AC1 is a silicon PNP transistor. 0.65 1.5 0.65 It is designed with high voltage. FEATURE ① ・Super mini package for easy mounting ・High voltage VCEO=-400V ② ③ APPLICATION DC/DC convertor, High voltage switching Terminal Connector J

1.898. inc6006ac1.pdf Size:156K _isahaya

INC6006AC1 PRELIMINARY Notice：This is not a final specification FOR LOW FREQUENCY AMPLIFY APPLICATION Some parametric are subject to change. SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT：mm 2.8 INC6006AC1 is a silicon NPN transistor. 0.65 1.5 0.65 It is designed with high voltage. FEATURE ① ・Small package for easy mounting. ・High voltage VCE

1.899. inc5006ac1.pdf Size:137K _isahaya

INC5006AC1 PRELIMINARY Notice：This is not a final specification FOR HIGH CURRENT DRIVE APPLICATION Some parametric are subject to change. SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT：mm 2.8 INC5006AC1 is a silicon NPN epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE ① ・Super mini pack

1.900. inc6001ac1.pdf Size:107K _isahaya

1.901. inc5001ac1.pdf Size:105K _isahaya

1.902. ina6006ac1.pdf Size:157K _isahaya

INA6006AC1 PRELIMINARY Notice：This is not a final specification FOR LOW FREQUENCY AMPLIFY APPLICATION Some parametric are subject to change. SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT：mm 2.8 INA6006AC1 is a silicon PNP transistor. 0.65 1.5 0.65 It is designed with high voltage. FEATURE ① ・Small package for easy mounting. ・High voltage VCE

1.903. isa1235ac1_isa1602am1.pdf Size:189K _isahaya

〈SMALL-SIGNAL TRANSISTOR〉 ISA1235AC1 ISA1602AM1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING UNIT：mm DESCRIPTION ISA1235AC1 ISA1602AM1 is super mini ISA1235AC1 ISA1602AM1 package resin sealed silicon PNP epitaxial type transistor. 2.1 2.8 These are designed for low frequency voltage 0.425 1.25 0.425 1.5 0.65 0.65 amplify applicati

1.904. ina6001ac1.pdf Size:106K _isahaya

INA6001AC1 PRELIMINARY Notice：This is not a final specification FOR HIGH CURRENT DRIVE APPLICATION Some parametric are subject to change. SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT：mm 2.8 INA6001AC1 is a silicon PNP epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE ① ・Super mini pack

1.905. 2sc1251.pdf Size:40K _advanced-semi

2SC1251 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The 2SC1251 is a Common Emitter Device Designed for High Linearity Class A Amplifiers up to 2.0 GHz. PACKAGE STYLE .204 4L STUD FEATURES INCLUDE: � Direct Replacement for NE74020 � High Gain - 10 dB min. @ 1.0 GHz � Gold Metalization MAXIMUM RATINGS IC 300 mA VCB 45 V PDISS 5.3W @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +1

1.906. 2sc1252.pdf Size:28K _advanced-semi

2SC1252 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2SC1252 is a High Frequency PACKAGE STYLE TO-39 Transistor, Designed for Wide Band Amplifier Applications up to 500 MHz. FEATURES INCLUDE: � High Gain -17 dB Typ. @ 200 MHz � Low NF - 3.0 dB Typ. @ 200 MHz � Hermetic TO-39 Package MAXIMUM RATINGS IC 400 mA VCB 45 V VCE 25 V PDISS 5 W @ TC = 25 �C TJ -65

1.907. csc1162.pdf Size:205K _cdil

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-126 (SOT-32) Plastic Package CSC1162 CSC1162 NPN PLASTIC POWER TRANSISTOR Complementary CSA715 Low frequency Power Amplifier PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ALL DIMENSIONS IN MM ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAX

1.908. bc171_bc172_bc174.pdf Size:264K _cdil

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTORS BC171 , A, B BC172, A, B, C BC174, A, B TO-92 Plastic Package E CB Amplifier Transistors ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL BC174 BC171 BC172 UNIT Collector Emitter Voltage VCEO 65 45 25 V Collector Base Voltage VCBO 8

1.909. csc1674.pdf Size:181K _cdil

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC1674 TO-92 Plastic Package TV PIF Amplifier, FM Tuner RF Amplifier , Mixer, Oscillator ABSOLUTE MAXIMUM RATINGS (Ta=25?C ) DESCRIPTION SYMBOL VALUE UNIT VCBO Collector Base Voltage 30 V VCEO Collector Emitter Voltage 20 V VEBO Emitter Base Voltage 4V I

1.910. csa709_csc1009.pdf Size:188K _cdil

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS CSA709 PNP CSC1009 NPN TO-92 CBE High Voltage Amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C ) DESCRIPTION SYMBOL CSA709 CSC1009 UNIT Collector -Base Voltage VCBO 160 160 V Collector -Emitter Voltage VCEO 150 140 V Emitter -Base Voltage VEBO 8.0 8.0 V

1.911. bc182_bc183_bc184.pdf Size:112K _cdil

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC182, A, B NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC183, A, B, C BC184, B, C TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with E B "T" C Amplifier Transistors ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL BC182 BC183 BC184 UNITS Collector Emitter Volt

1.912. c44c8_c44c11.pdf Size:245K _cdil

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL POWER TRANSISTORS C44C8, C44C11 TO - 220 Plastic Package Medium Power Switching and Amplifier Applications Complementary C45C Series ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL C44C8 C44C11 UNIT Collector- Emitter Voltage VCES 70 90 V Collector- Emitter Voltage VCEO 60 80 V E

1.913. csc1398_a.pdf Size:162K _cdil

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package CSC1398, CSC1398A CSC1398, CSC1398A NPN PLASTIC POWER TRANSISTORS Complementary CSA748 Medium Power Amplifier PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. B E F A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D0.90 E 1.15 1.40 1

1.914. csc1730.pdf Size:179K _cdil

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL RF TRANSISTOR CSC1730 TO92 BCE B C E TV VHF, UHF, TUNER Oscillator Mixer Amplifier Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 30 V Collector -Emitter Voltage VCEO 15 V Emitter Base

1.915. c13003.pdf Size:214K _cdil

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company C13003 NPN SILICON POWER TRANSISTOR TO126 Plastic Package Applications Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS(Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 600 V Collector -Emitter ( sus) Voltage VCEO

1.916. csc1684_1685_q_r_s.pdf Size:228K _cdil

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS CSC1684, CSC1685 TO-92 Plastic Package B C E ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL CSC1684 CSC1685 UNITS VCEO Collector Emitter Voltage 25 50 V VCBO Collector Base Voltage 30 60 V VEBO Emitter Base Voltage 7 V ICP Collector Current Peak 200 mA

1.917. csc1845_p_f_e_u.pdf Size:251K _cdil

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC1845 TO-92 Plastic Package B C E For use as the middle range Amplifier in Hi-Fi and other similar Amplifier Applications ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 120 V VCBO Collector Base Voltage

1.918. c100_d100.pdf Size:82K _cdil

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS C100 PNP D100 NPN TO-92 Plastic Package E CB These are complementary transistors for medium power voltage and current amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?C Unless Specified Otherwise) DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Volt

1.919. csc1507.pdf Size:145K _cdil

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR CSC1507 TO126 Plastic Package E C B Color TV Chroma Output ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 300 V Collector -Emitter Voltage VCEO 300 V Emitter Base Voltage VEBO 7V Collector Current IC 200 mA Collector

1.920. bc107_bc108_bc109_a_b_c.pdf Size:142K _cdil

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTORS BC107/A/B/C BC108/A/B/C BC109/A/B/C TO-18 Metal Can Package Low Noise General Purpose Audio Amplifiers ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BC107 BC108 BC109 UNIT VCEO Collector Emitter Voltage 45 25 V 25 VCBO Collector Base Voltage 50 30 V 30 VEBO Emitt

1.921. c45c5_c45c11.pdf Size:282K _cdil

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON EPITAXIAL POWER TRANSISTORS C45C5,11 TO-220 Designed for Various Specific and General Purpose Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL C45C5 C45C11 UNIT Collector -Emitter Voltage VCEO 45 80 V Collector -Emitter Voltage VCES 55 90 V Emitter Base Voltage VEBO

1.922. bc184l_lb_lc.pdf Size:141K _cdil

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL AMPLIFIER TRANSISTORS BC184L, BC184LB BC184LC TO-92 Plastic Package General Purpose Amplifier Transistors ABSOLUTE MAXIMUM RATINGS(Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector -Emitter Voltage 30 V VCBO Collector -Base Voltage 45 V

1.923. csc1906.pdf Size:239K _cdil

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC1906 TO-92 Plastic Package B C E VHF Amplifier Mixer, Local Oscillator ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage 30 V VCEO Collector Emitter Voltage 19 V VEBO Emitter Base Voltage 2 V IC Collector Current 5

1.924. csc1008_csa708.pdf Size:217K _cdil

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN/PNP EPITAXIAL PLANAR SILICON TRANSISTORS CSC1008 NPN CSA708 PNP TO-92 CBE Low Frequency Amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 80 V Collector -Emitter Voltage VCEO 60 V Emitter -Base Voltage VEBO 8.0

1.925. csc1061.pdf Size:154K _cdil

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package CSC1061 CSC1061 NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. E B F A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D0.90 E 1.15 1.40 1 2 3 F 3.75 3.88 G 2.29 2.79 H 2.

1.926. bc167ab_bc168abc_bc169.pdf Size:151K _cdil

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC167A, BC167B BC168A, BC168B, BC168C BC169B, BC169C TO-92 Plastic Package AF Pre and Driver Stages as well as for Universal Application. ABSOLUTE MAXIMUM RATINGS(Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL BC167 BC168 BC169 UNITS VCEO Collector

1.927. csc1740.pdf Size:235K _cdil

Q Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON PLANAR TRANSISTOR CSC 1740 TO-92 Plastic Package General Small Signal Amplifier ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNIT BVCEO Collector Emitter Voltage 50(ORS) V 40(E) BVCBO Collector Base Voltage 60(ORS) V 50(E) BVEBO

1.928. csc1213_a.pdf Size:276K _cdil

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTORS CSC1213 CSC1213A TO-92 Plastic Package Low Frequency Amplifier. ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL CSC1213 CSC1213A UNIT VCEO Collector Emitter Voltage 35 50 V VCBO Collector Base Voltage 35 50 V VEBO Emitter Bas

1.929. csc1047_bcd.pdf Size:323K _cdil

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC1047 TO-92 Plastic Package … B C E Suitable for RF Amplifier in FM/AM Radios ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage 30 V Collector Emitter Voltage VCEO 20 V VEBO Emitter Base Voltage 3 V Colle

1.930. csc1815.pdf Size:247K _cdil

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSC1815 TO-92 Plastic Package B C E Audio Frequency General Purpose and Driver Stage Amplifier Applications. Complementary CSA1015 ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage 60 V

1.931. csc1959.pdf Size:246K _cdil

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CSC1959 TO-92 BCE B C E Audio Frequency Low Power Amplifier Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C ) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 35 V Collector -Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5.0 V Collector Current

1.932. bc177_bc178_bc179_a_b_.pdf Size:89K _cdil

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC177, A, B, C BC178, A, B, C BC179, A, B, C TO-18 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BC177 BC178 BC179 UNIT Collector -Emitter Voltage VCEO 45 25 20 V Collector -Emitter Voltage VCES 50 30 25 V Collector -Base Voltage VCBO 50 30 25 V Emitter -B

1.933. 2sc1008.pdf Size:352K _hua-yuan

??????????? DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD. TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189 TO-92 Plastic-Encapsulate Transistors 2SC1008 TRANSISTOR(NPN ) TO�92 FEATURES 1.EMITTER Power dissipation PCM : 0.8 W(Tamb=25?) 2. BASE Collector current 3. COLLECTOR ICM : 0.7 A Collector-base voltage 1 2 3 V(BR)CBO : 80 V Operating and storage junct

1.934. 2sc1172.pdf Size:143K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC1172 DESCRIPTION ·With TO-3 package ·High breakdown voltage ·High speed switching APPLICATIONS ·For use in color TV horizontal output applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER C

1.935. 2sc1106.pdf Size:142K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC1106 DESCRIPTION ·With TO-3 package ·High power dissipation ·High breakdown voltage APPLICATIONS ·For voltage regulator ,inverter and switching mode power supply applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta

1.936. 2sc1170.pdf Size:146K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC1170 DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Designed for use in large screen color deflection circuits PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNI

1.937. 2sc1894.pdf Size:143K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC1894 DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Low collector saturation voltage APPLICATIONS ·For color TV horizontal output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=?) SYMBOL PARAMETER C

1.938. 2sc1027.pdf Size:160K _jmnic

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1027 DESCRIPTION ·With TO-3 package ·High power dissipation ·Low collector saturation voltage APPLICATIONS ·Switching regulators ·DC-DC convertor ·General purpose power amplifiers PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute ma

1.939. 2sc1116.pdf Size:142K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC1116 DESCRIPTION ·With TO-3 package ·Wide area of safe operation APPLICATIONS ·For audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Coll

1.940. 2sc1505.pdf Size:154K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC1505 DESCRIPTION ·With TO-220 package ·High collector-emitter voltage : VCEO=300V ·High frequency:fT=40MHz(Min) APPLICATIONS ·For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline

1.941. 2sc1096.pdf Size:108K _jmnic

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1096 DESCRIPTION ·With TO-202 package ·Low breakdown voltage ·High current ·High fT APPLICATIONS ·For audio frequency power amplifier and low speed switching applications ·Suitable for output stages of 3 to 5 watts car radio sets and car stereo PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitt

1.942. 2sc1162.pdf Size:172K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC1162 DESCRIPTION · ·With TO-126 package ·Complement to type 2SA715 APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volt

1.943. 2sc1212.pdf Size:179K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A DESCRIPTION · ·With TO-126 package ·Complement to type 2SA743/743A APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SC1212 50

1.944. 2sc1827.pdf Size:146K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC1827 DESCRIPTION ·With TO-220 package ·Complement to type 2SA769 ·Collector current :IC=4A ·Collector dissipation :PC=30W@TC=25? APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220)

1.945. 2sc1756.pdf Size:184K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC1756 DESCRIPTION ·With TO-220 package ·High breakdown voltage APPLICATIONS ·For TV chroma,video ,audio output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Op

1.946. 2sc1050.pdf Size:159K _jmnic

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1050 DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·For use in audio and general purpose applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UN

1.947. 2sc1942.pdf Size:144K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC1942 DESCRIPTION ·With TO-3 package ·High breakdown voltage ·High speed switching APPLICATIONS ·For TV horizontal output applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE

1.948. 2sc1846.pdf Size:180K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC1846 DESCRIPTION · ·With TO-126 package ·Complement to type 2SA885 ·Low collector saturation APPLICATIONS ·For medium output power amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO C

1.949. 2sc1755.pdf Size:181K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC1755 DESCRIPTION ·With TO-220 package ·High breakdown voltage APPLICATIONS ·For TV chroma,video ,audio output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage O

1.950. 2sc1922.pdf Size:144K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC1922 DESCRIPTION ·With TO-3 package ·High breakdown voltage ·High speed switching APPLICATIONS ·For TV horizontal output applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE

1.951. 2sc1061.pdf Size:206K _jmnic

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1061 DESCRIPTION ·With TO-220 package ·Low saturation voltage ·Complement to type 2SA671 ·Note: type 2SC1060 with short pin APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum rating

1.952. 2sc1195.pdf Size:142K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC1195 DESCRIPTION ·With TO-3 package ·High power dissipation ·Low collector saturation voltage APPLICATIONS ·For line operated audio output amplifier and switching power supply drivers applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absol

1.953. 2sc1905.pdf Size:147K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC1905 DESCRIPTION · ·With TO-220C package ·High breakdown voltage ·Large collector power dissipation APPLICATIONS ·Color TV horizontal deflection driver PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT

1.954. 2sc1098.pdf Size:173K _jmnic

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1098 2SC1098A DESCRIPTION ·With TO-202 package ·High Voltage ·High transition frequency APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stages of 5~17W small stereo sets PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202)

1.955. 2sc1875.pdf Size:147K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC1875 DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Designed for use in large screen color deflection circuits PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNI

1.956. 2sc1893.pdf Size:143K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC1893 DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·For line-operated horizontal deflection output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UN

1.957. 2sc1847.pdf Size:178K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC1847 DESCRIPTION · ·With TO-126 package ·Complement to type 2SA886 ·Low collector saturation APPLICATIONS ·For medium output power amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO C

1.958. 2sc1030.pdf Size:44K _jmnic

Power Transistors www.jmnic.com 2SC1030 Silicon NPN Transistors 1B 2E 3C Features With TO-3 package Low frequency power amplifications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 6 V IC Collector current-Continuous 6 A PD Total Power Dissipation@TC=25

1.959. 2sc1173.pdf Size:154K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC1173 DESCRIPTION ·With TO-220 package ·Complement to type 2SA473 ·Collector current :IC=3A ·Collector dissipation:PC=10W@TC=25? APPLICATIONS ·Low frequency power amplifier ·Power regulator PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25?

1.960. 2sc1080.pdf Size:154K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC1079 2SC1080 DESCRIPTION ·With TO-3 package ·Complement to type 2SA679/680 ·High power dissipation APPLICATIONS ·For audio power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CO

1.961. 2sc1913_2sc1913a.pdf Size:118K _jmnic

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1913 2SC1913A DESCRIPTION ·With TO-220 package ·Complement to type 2SA913/913A ·Large collector power dissipation ·High VCEO APPLICATIONS ·Audio frequency high power driver PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbo

1.962. 2sc1051.pdf Size:170K _jmnic

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1051 DESCRIPTION ·With TO-3 package ·Wide area of safe operation APPLICATIONS ·For low frequency power amplifier and large power switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=?) SYMBOL PARA

1.963. 2sc1507.pdf Size:115K _jmnic

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1507 DESCRIPTION ·With TO-220 package ·High collector-emitter voltage : VCEO=300V ·High frequency:fT=40MHz(Min) APPLICATIONS ·For color TV chroma output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETE

1.964. 2sc1079.pdf Size:174K _jmnic

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1079 2SC1080 DESCRIPTION ·With TO-3 package ·Complement to type 2SA679/680 ·High power dissipation APPLICATIONS ·For audio power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARA

1.965. ktc1003.pdf Size:449K _kec

SEMICONDUCTOR KTC1003 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR B/W TV HORIZONTAL DEFLECTION OUTPUT APPLICATION. A C DIM MILLIMETERS S _ FEATURES A 10.0 + 0.3 _ + B 15.0 0.3 E Large Collector Current Capability. C _ 2.70 0.3 + D 0.76+0.09/-0.05 Large Collector Power Dissipation Capability. _ E ?3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 13.6

1.966. krc116s_122s.pdf Size:428K _kec

SEMICONDUCTOR KRC116S~KRC122S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E L B L FEATURES DIM MILLIMETERS _ + A 2.93 0.20 ·With Built-in Bias Resistors. B 1.30+0.20/-0.15 ·Simplify Circuit Design. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 ·Reduce a Quantity of Parts and Manufacturing Process. E 2.40+0.30/-0.20

1.967. krc110m-114m.pdf Size:391K _kec

SEMICONDUCTOR KRC110M~KRC114M EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES ·With Built-in Bias Resistors. ·Simplify Circuit Design. DIM MILLIMETERS O A 3.20 MAX ·Reduce a Quantity of Parts and Manufacturing Process. H M B 4.30 MAX C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.00

1.968. krc159f.pdf Size:382K _kec

SEMICONDUCTOR KRC157F~KRC159F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES E ·With Built-in Bias Resistors. B ·Simplify Circuit Design. ·Reduce a Quantity of Parts and Manufacturing Process. ·Thin Fine Pitch Small Package. DIM MILLIMETERS 2 _ A 0.6 + 0.05 3 _ + B 0.8 0.05 C 0.38+0.02/-0.04

1.969. krc107m-109m.pdf Size:391K _kec

SEMICONDUCTOR KRC107M~KRC109M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES ·With Built-in Bias Resistors ·Simplify Circuit Design DIM MILLIMETERS O A 3.20 MAX ·Reduce a Quantity of Parts and Manufacturing Process H M B 4.30 MAX C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.00 0.5

1.970. ktc1027.pdf Size:79K _kec

SEMICONDUCTOR KTC1027 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. B D FEATURE Complementary to KTA1023. DIM MILLIMETERS P DEPTH:0.2 A 7.20 MAX B 5.20 MAX C C 0.60 MAX S MAXIMUM RATING (Ta=25 ) D 2.50 MAX Q E 1.15 MAX K CHA RACTERISTIC SYMBOL RATING UNIT F 1.27 G 1.70 MAX VCBO Collector-Base Voltage 120 V H 0.55 MAX FF _ J 14.00 + 0.50 VCEO

1.971. krc107-109.pdf Size:378K _kec

SEMICONDUCTOR KRC107~KRC109 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B C FEATURES ·With Built-in Bias Resistors ·Simplify Circuit Design ·Reduce a Quantity of Parts and Manufacturing Process N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ H J

1.972. krc110_4s.pdf Size:393K _kec

SEMICONDUCTOR KRC110S~KRC114S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E L B L FEATURES DIM MILLIMETERS ·With Built-in Bias Resistors. _ + A 2.93 0.20 B 1.30+0.20/-0.15 ·Simplify Circuit Design. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 ·Reduce a Quantity of Parts and Manufacturing Process. E 2.40+0.30/-0.2

1.973. krc101_6s.pdf Size:391K _kec

SEMICONDUCTOR KRC101S~KRC106S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E L B L FEATURES DIM MILLIMETERS ·With Built-in Bias Resistors. _ + A 2.93 0.20 B 1.30+0.20/-0.15 ·Simplify Circuit Design. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 ·Reduce a Quantity of Parts and Manufacturing Process. E 2.40+0.30/-0.

1.974. krc160f-164f.pdf Size:387K _kec

SEMICONDUCTOR KRC160F~KRC164F EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES E ·With Built-in Bias Resistors. B ·Simplify Circuit Design. ·Reduce a Quantity of Parts and Manufacturing Process. ·Thin fine Pitch Small Package. DIM MILLIMETERS 2 _ A 0.6 + 0.05 3 _ + B 0.8 0.05 C 0.38+0.02/-0.04

1.975. ktc1026.pdf Size:89K _kec

SEMICONDUCTOR KTC1026 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE APPLICATION. COLOR TV CLASS B SOUND OUTPUT APPLICATION. B D FEATURES High Voltage : VCEO=180V. DIM MILLIMETERS P High DC Current Gain. DEPTH:0.2 A 7.20 MAX B 5.20 MAX C C 0.60 MAX S D 2.50 MAX Q E 1.15 MAX K F 1.27 G 1.70 MAX MAXIMUM RATINGS (Ta=25 ) H 0.55 MAX FF _ J 14.00 + 0.50 CHARACT

1.976. krc119m.pdf Size:437K _kec

SEMICONDUCTOR KRC116M~KRC122M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B FEATURES ·With Built-in Bias Resistors. DIM MILLIMETERS O ·Simplify Circuit Design. A 3.20 MAX H M B 4.30 MAX ·Reduce a Quantity of Parts and Manufacturing Process. C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.00 0.50

1.977. krc153f.pdf Size:393K _kec

1.978. krc119s.pdf Size:349K _kec

SEMICONDUCTOR KRC119S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES E ·With Built-in Bias Resistors. L B L DIM MILLIMETERS ·Simplify Circuit Design. _ + A 2.93 0.20 B 1.30+0.20/-0.15 ·Reduce a Quantity of Parts and Manufacturing Process. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.9

1.979. krc116m.pdf Size:437K _kec

1.980. krc154f.pdf Size:393K _kec

1.981. krc118m.pdf Size:437K _kec

1.982. krc107_9s.pdf Size:369K _kec

SEMICONDUCTOR KRC107S~KRC109S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E L B L FEATURES DIM MILLIMETERS _ ·With Built-in Bias Resistors. A 2.93 0.20 + B 1.30+0.20/-0.15 ·Simplify Circuit Design. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 ·Reduce a Quantity of Parts and Manufacturing Process. E 2.40+0.30/-0.

1.983. ktc1815.pdf Size:803K _kec

SEMICONDUCTOR KTC1815 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ·Excellent hFE Linearity : hFE(2)=100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). ·Low Noise : NF=1dB(Typ.). at f=1kHz. ·Complementary to KTA1015. MAXIMUM RATING (Ta=25?) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Volta

1.984. ktc1020.pdf Size:72K _kec

SEMICONDUCTOR KTC1020 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B FEATURES Excellecnt hFE Linearity : hFE(2)=25Min. : VCE=6V, IC=400mA. DIM MILLIMETERS O A 3.20 MAX 1 Watt Amplifier Application. H M B 4.30 MAX C 0.55 MAX Complementary to KTA1021. _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.00 0.50 H 0.60 MAX J 1.0

1.985. ktc1008.pdf Size:74K _kec

SEMICONDUCTOR KTC1008 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VOLTAGE REGULATOR, RELAY, RAMP DRIVER, INDUSTRIAL USE B C FEATURES High Voltage : VCEO=60V(Min.). High Current : IC(Max.)=1A. N DIM MILLIMETERS High Transition Frequency : fT=150MHz(Typ.). A 4.70 MAX E K B 4.80 MAX Wide Area of Safe Operation. G C 3.70 MAX D Complementary to KTA708. D 0.45 E 1.00 F 1.27

1.986. krc101m-106m.pdf Size:426K _kec

SEMICONDUCTOR KRC101M~KRC106M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES ·With Built-in Bias Resistors. ·Simplify Circuit Design. DIM MILLIMETERS O A 3.20 MAX ·Reduce a Quantity of Parts and Manufacturing Process. H M B 4.30 MAX C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.00

1.987. ktc1006.pdf Size:73K _kec

SEMICONDUCTOR KTC1006 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR CB TRANSCEIVER TX DRIVER APPLICATION. B D FEATURES Recommended for Driver Stage Application of AM 4W Transmitter. DIM MILLIMETERS P High Power Gain. DEPTH:0.2 A 7.20 MAX Wide Area of Safe Operation. B 5.20 MAX C C 0.60 MAX S D 2.50 MAX Q E 1.15 MAX K F 1.27 G 1.70 MAX H 0.55 MAX FF MAXIMUM RATINGS (Ta=2

1.988. krc110-114.pdf Size:47K _kec

SEMICONDUCTOR KRC110~KRC114 EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B C FEATURES ·With Built-in Bias Resistors. ·Simplify Circuit Design. ·Reduce a Quantity of Parts and Manufacturing Process. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 EQUIVALENT CIRCUIT G

1.989. krc101-106.pdf Size:401K _kec

SEMICONDUCTOR KRC101~KRC106 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B C FEATURES ·With Built-in Bias Resistors. ·Simplify Circuit Design. ·Reduce a Quantity of Parts and Manufacturing Process. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ H

1.990. krc151f.pdf Size:393K _kec

1.991. krc116-122.pdf Size:404K _kec

SEMICONDUCTOR KRC116~KRC122 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B C FEATURES ·With Built-in Bias Resistors. ·Simplify Circuit Design. ·Reduce a Quantity of Parts and Manufacturing Process. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ H J 1

1.992. 2sc1626_2sa816.pdf Size:112K _microelectronics

1.993. bc160_bc161.pdf Size:146K _microelectronics

1.994. 2sc1675.pdf Size:77K _microelectronics

1.995. bc171_bc172_bc173.pdf Size:183K _microelectronics

1.996. bc143.pdf Size:89K _microelectronics

1.997. 2sc1815-m.pdf Size:168K _microelectronics

1.998. bc177_bc178_bc179_bc257_bc258_bc259_bc307_bc308_bc309_bc320_bc321_bc322.pdf Size:225K _microelectronics

1.999. bc142.pdf Size:72K _microelectronics

1.1000. bc107_bc108_bc109_bc167_bc168_bc169_bc237_bc238_bc239_bc317_bc318_bc319.pdf Size:228K _microelectronics

1.1001. 2sc1985_2sc1986.pdf Size:83K _sanken-ele

1.1002. 2sc1674.pdf Size:108K _transys

Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SC1674 TRANSISTOR (NPN) TO-92 FEATURE Power dissipation 1. EMITTER PCM: 0. 25 W (Tamb=25?) 2. COLLECTOR Collector current 3. BASE ICM: 0.02 A . 1 2 3 Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55? to +150? ELECTRICAL CHA

1.1003. 2sc1222.pdf Size:106K _usha

Transistors 2SC1222

1.1004. 2sc1187.pdf Size:73K _usha

Transistors 2SC1187

1.1005. 2sc1393.pdf Size:103K _usha

Transistors 2SC1393

1.1006. 2sc184.pdf Size:81K _usha

Transistors 2SC184

1.1007. 2sc1394.pdf Size:73K _usha

Transistors 2SC1394

1.1008. 2sc1446.pdf Size:56K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1446 DESCRIPTION ·With TO-220 package ·High collector-emitter voltage : VCEO=300V APPLICATIONS ·For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and sy

1.1009. 2sc1501.pdf Size:120K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1501 DESCRIPTION ·With TO-126 package ·High breakdown voltage ·Large power dissipation APPLICATIONS ·For medium power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta

1.1010. 2sc1172.pdf Size:115K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1172 DESCRIPTION Ў¤ With TO-3 package Ў¤ High breakdown voltage Ў¤ High speed switching APPLICATIONS Ў¤ For use in color TV horizontal output applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж

1.1011. 2sc1871a.pdf Size:127K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1871A DESCRIPTION ·With TO-3 package ·High switching speed APPLICATIONS ·For power switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector MAXIMUN RATINGS SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volt

1.1012. 2sc1895.pdf Size:127K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1895 DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Low collector saturation voltage APPLICATIONS ·For color TV horizontal output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=?) S

1.1013. 2sc1106.pdf Size:113K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1106 DESCRIPTION Ў¤ With TO-3 package Ў¤ High power dissipation Ў¤ High breakdown voltage APPLICATIONS Ў¤ For voltage regulator ,inverter and switching mode power supply applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute

1.1014. 2sc1579.pdf Size:129K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1579 DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor controls PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARA

1.1015. 2sc1569.pdf Size:228K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1569 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- :V(BR)CEO= 300V(Min) ·DC Current Gain- : hFE= 40-170 @IC= 50mA, VCE= 10V ·High Current-Gain Bandwidth Product APPLICATIONS ·Designed for color TV chroma output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VAL

1.1016. 2sc1079_2sc1080.pdf Size:122K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1079 2SC1080 DESCRIPTION Ў¤ With TO-3 package Ў¤ Complement to type 2SA679/680 Ў¤ High power dissipation APPLICATIONS Ў¤ For audio power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ў�

1.1017. 2sc1227.pdf Size:129K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1227 DESCRIPTION ·With TO-3 package ·High power dissipation APPLICATIONS ·Suitable for use in clocked voltatge converters PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector MAXIMUN RATINGS SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO C

1.1018. 2sc1170.pdf Size:115K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1170 DESCRIPTION Ў¤ With TO-3 package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Designed for use in large screen color deflection circuits PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO

1.1019. 2sc1894.pdf Size:113K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1894 DESCRIPTION Ў¤ With TO-3 package Ў¤ High breakdown voltage Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ For color TV horizontal output applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ў�

1.1020. 2sc1212a.pdf Size:102K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1212A DESCRIPTION ·High Collector Current -IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Good Linearity of hFE APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Volta

1.1021. 2sc1863.pdf Size:128K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1863 DESCRIPTION ·With TO-66 package ·Continuous collector current-IC=7A ·Power dissipation –PC=40W @TC=25? APPLICATIONS ·Designed for general-purpose amplifier and switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Col

1.1022. 2sc1985_2sc1986.pdf Size:58K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1985 2SC1986 DESCRIPTION ·With TO-220 package ·Complement to type 2SA770/771 ·Low collector saturation voltage APPLICATIONS ·For general and industrial purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?)

1.1023. 2sc1212_2sc1212a.pdf Size:146K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1212 2SC1212A DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2SA743/743A APPLICATIONS Ў¤ For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL PARAMETER

1.1024. 2sc1953.pdf Size:134K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1953 DESCRIPTION · ·With TO-126 package ·Complement to type 2SA914 ·High VCEO APPLICATIONS ·For low-frequency power pre-amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT

1.1025. 2sc1027.pdf Size:113K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1027 DESCRIPTION Ў¤ With TO-3 package Ў¤ High power dissipation Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ Switching regulators Ў¤ DC-DC convertor Ў¤ General purpose power amplifiers PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SY

1.1026. 2sc1904.pdf Size:113K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1904 DESCRIPTION · ·With TO-126 package ·Complement to type 2SA899 APPLICATIONS ·For high frequency power amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-bas

1.1027. 2sc1343.pdf Size:127K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1343 DESCRIPTION ·With TO-3 package ·Wide area of safe operation APPLICATIONS ·For audio frequency power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS

1.1028. 2sc1929.pdf Size:63K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1929 DESCRIPTION · ·With TO-220C package ·High VCEO ·Large PC APPLICATIONS ·AF output for direct main operation TV PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base

1.1029. 2sc1609.pdf Size:129K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1609 DESCRIPTION · ·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·Motor control ·Linear and switching applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25?)

1.1030. 2sc1116.pdf Size:113K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1116 DESCRIPTION Ў¤ With TO-3 package Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For audio and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC PC T

1.1031. 2sc1163.pdf Size:113K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1163 DESCRIPTION · ·With TO-126 package ·High power dissipation APPLICATIONS ·Useful for high-voltage general purpose applications ·Suitable for transformerless ,line-operated equipment PINNING (see Fig.2) PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute

1.1032. 2sc1447.pdf Size:56K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1447 DESCRIPTION ·With TO-220 package ·High breakdown voltage ·High transition frequency APPLICATIONS ·For color TV chroma output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emitter Absolute maximum rati

1.1033. 2sc1413a.pdf Size:127K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1413A DESCRIPTION · ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For TV horizontal deflection output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITION

1.1034. 2sc1505.pdf Size:123K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1505 DESCRIPTION Ў¤ With TO-220 package Ў¤ High collector-emitter voltage : VCEO=300V Ў¤ High frequency:fT=40MHz(Min) APPLICATIONS Ў¤ For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplifie

1.1035. 2sc1391.pdf Size:127K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1391 DESCRIPTION ·With TO-66 package ·High collector-emitter voltage : VCEO=300V APPLICATIONS ·For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum

1.1036. 2sc1358.pdf Size:130K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1358 DESCRIPTION ·With TO-3 package ·High breakdown voltage ·High speed switching APPLICATIONS ·Designed for use in large screen color deflection circuits PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=

1.1037. 2sc1626.pdf Size:65K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1626 DESCRIPTION · ·With TO-220C package ·Complement to type 2SA816 APPLICATIONS ·Designed for the driver stages of 30-50W high-fidelity amplifiers and medium speed switching up to 2A peak current PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outli

1.1038. 2sc1096.pdf Size:117K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-202 package Ў¤ Low breakdown voltage Ў¤ High current Ў¤ High fT APPLICATIONS Ў¤ For audio frequency power amplifier and low speed switching applications Ў¤ Suitable for output stages of 3 to 5 watts car radio sets and car stereo PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter D

1.1039. 2sc1514.pdf Size:117K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1514 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Low Saturation Voltage APPLICATIONS ·Designed for use in high frequency high voltage amplifier and TV viedo output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VA

1.1040. 2sc1367.pdf Size:127K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1367 DESCRIPTION · ·With TO-3 package ·Wide area of safe operation APPLICATIONS ·For TV horizontal deflection output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITI

1.1041. 2sc1610.pdf Size:129K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1610 DESCRIPTION · ·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·For high speed power switching applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMB

1.1042. 2sc1971.pdf Size:203K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1971 DESCRIPTION ·High Power Gain- : Gpe? 10dB,f= 175MHz, PO= 6W; VCC= 13.5V ·High Reliability APPLICATIONS ·Designed for RF power amplifiers on VHF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 35 V VCEO Collec

1.1043. 2sc1325.pdf Size:130K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1325 DESCRIPTION · ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Designed for use in large screen color deflection circuits PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER

1.1044. 2sc1162.pdf Size:141K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1162 DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2SA715 APPLICATIONS Ў¤ For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute Maximun Ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM Colle

1.1045. 2sc1576.pdf Size:127K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1576 DESCRIPTION ·With TO-3 package ·High voltage,high speed APPLICATIONS ·For high voltage ,fast switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VA

1.1046. 2sc1881.pdf Size:57K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1881 DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain APPLICATIONS ·High gain amplifier power switching PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collect

1.1047. 2sc1185.pdf Size:127K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1185 DESCRIPTION ·With TO-3 package ·Wide area of safe operation ·High breakdown voltage :VCEO=250V(min) APPLICATIONS ·For voltage regulator,inverter,switching mode power supply applications. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and

1.1048. 2sc1969.pdf Size:202K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1969 DESCRIPTION ·High Power Gain- : Gpe?12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for 10~14 watts output power class AB amplifiers applications in HF band. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collecto

1.1049. 2sc1683.pdf Size:64K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1683 DESCRIPTION · ·With TO-220C package ·Complement to type 2SA843 ·High breakdown voltage ·Large collector power dissipation APPLICATIONS ·Audio frequency power amplifier ·Color TV vertical deflection output PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emi

1.1050. 2sc1398_2sc1398a.pdf Size:65K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1398 2SC1398A DESCRIPTION ·With TO-220 package ·2SC1398 is complement to type 2SA748 ·Large collector power dissipation APPLICATIONS ·For medium power amplifier applicattions PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol

1.1051. 2sc1868.pdf Size:127K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1868 DESCRIPTION ·With TO-3 package ·Wide area of safe operation ·High voltage ,high speed APPLICATIONS ·For switching regulator application PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAME

1.1052. 2sc1308.pdf Size:127K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1308 DESCRIPTION ·With TO-3 package ·High voltage ·Low collector saturation voltage APPLICATIONS ·Color TV horizontal output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=?) SYMBOL PARAMETER

1.1053. 2sc1567_2sc1567a.pdf Size:126K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1567 2SC1567A DESCRIPTION · ·With TO-126 package ·Complement to type 2SA794/794A ·High collector to emitter voltage VCEO APPLICATIONS ·For low-frequency high power driver applications ·Optimum for the driver stage of low-frequency and 40 W to 100 W output amplifier PINNING PIN DESCRIPTION 1

1.1054. 2sc1449.pdf Size:113K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1449 DESCRIPTION ·With TO-126 package ·Low collector saturation voltage APPLICATIONS ·Low frequency power amplification ·High frequency amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-b

1.1055. 2sc1418.pdf Size:56K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1418 DESCRIPTION ·With TO-220 package ·Large collector power dissipation APPLICATIONS ·For medium power amplifier applicattions PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYM

1.1056. 2sc1777.pdf Size:127K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1777 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·For use in high power audio amplifier applications and high voltage switching regulator circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and sym

1.1057. 2sc1098_2sc1098a.pdf Size:118K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1098 2SC1098A DESCRIPTION Ў¤ With TO-202 package Ў¤ High Voltage Ў¤ High transition frequency APPLICATIONS Ў¤ Audio frequency power amplifier Ў¤ Low speed switching Ў¤ Suitable for output stages of 5~17W small stereo sets PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute

1.1058. 2sc1440.pdf Size:127K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1440 DESCRIPTION ·With TO-3 package ·High power dissipation APPLICATIONS ·Power amplifier applications ·Power switching applications ·DC-DC converters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?)

1.1059. 2sc1678.pdf Size:56K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1678 DESCRIPTION ·With TO-220 package ·Low collector saturation voltage APPLICATIONS ·27MHz RF power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL

1.1060. 2sc1170a.pdf Size:129K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1170A DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Designed for use in large screen color deflection circuits PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CO

1.1061. 2sc1520.pdf Size:113K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1520 DESCRIPTION ·With TO-202 package ·High voltage ·High transition frequency APPLICATIONS ·For color TV chroma output and video output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratings (Ta=25?)

1.1062. 2sc1235.pdf Size:127K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1235 DESCRIPTION ·With TO-66 package ·High collector-emitter voltage : VCEO=300V APPLICATIONS ·For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum

1.1063. 2sc1870.pdf Size:129K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1870 DESCRIPTION ·With TO-3 package ·High switching speed APPLICATIONS ·For power switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector MAXIMUN RATINGS SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta

1.1064. 2sc1827.pdf Size:116K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1827 DESCRIPTION Ў¤ With TO-220 package Ў¤ Complement to type 2SA769 Ў¤ Collector current :IC=4A Ў¤ Collector dissipation :PC=30W@TC=25Ўж APPLICATIONS Ў¤ For use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolu

1.1065. 2sc1413.pdf Size:127K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1413 DESCRIPTION · ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For TV horizontal deflection output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS

1.1066. 2sc1756.pdf Size:151K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220 package Ў¤ High breakdown voltage APPLICATIONS Ў¤ For TV chroma,video ,audio output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC1756 Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM Collector-base vol

1.1067. 2sc1295.pdf Size:127K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1295 DESCRIPTION · ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For TV horizontal deflection output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS

1.1068. 2sc1624_2sc1625.pdf Size:66K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1624 2SC1625 DESCRIPTION ·With TO-220 package ·Complement to type 2SA814/815 ·High breakdown voltage APPLICATIONS ·Medium power amplifier applications ·Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ra

1.1069. 2sc1050.pdf Size:114K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1050 DESCRIPTION Ў¤ With TO-3 package Ў¤ High breakdown voltage APPLICATIONS Ў¤ For use in audio and general purpose applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC

1.1070. 2sc1516.pdf Size:63K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1516 DESCRIPTION ·With TO-220 package ·Low collector saturation voltage APPLICATIONS ·For medium power amplifer applicatons PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector

1.1071. 2sc1785.pdf Size:127K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1785 DESCRIPTION ·With TO-3 package ·High power dissipation APPLICATIONS ·Power amplifier applications ·Power switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER COND

1.1072. 2sc1942.pdf Size:115K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1942 DESCRIPTION Ў¤ With TO-3 package Ў¤ High breakdown voltage Ў¤ High speed switching APPLICATIONS Ў¤ For TV horizontal output applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCB

1.1073. 2sc1454.pdf Size:127K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1454 DESCRIPTION ·With TO-3 package ·High breakdown voltage:VCEO=250V(min) APPLICATIONS ·For use in low frequency power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAM

1.1074. 2sc1846.pdf Size:148K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2SA885 Ў¤ Low collector saturation APPLICATIONS Ў¤ For medium output power amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2SC1846 Ў¤ Absolute Maximun Ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC

1.1075. 2sc1755.pdf Size:151K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220 package Ў¤ High breakdown voltage APPLICATIONS Ў¤ For TV chroma,video ,audio output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC1755 Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM Collector-base vol

1.1076. 2sc1880.pdf Size:57K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1880 DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC current gain APPLICATIONS ·For industrial use PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage O

1.1077. 2sc1444.pdf Size:127K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1444 DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For switching and wide-band amplifier applications. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum

1.1078. 2sc1906.pdf Size:180K _inchange_semiconductor

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC1906 DESCRIPTION ·Low Noise ·High Gain Bandwidth Product APPLICATIONS ·Designed for use in VHF amplifier,mixer and local oscillator. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 19 V VEBO Emitter-Base Voltage 2

1.1079. 2sc1619.pdf Size:129K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1619 DESCRIPTION · ·With TO-3 package ·High current capacity ·Wide safe oprating area APPLICATIONS ·For audio frequency output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PA

1.1080. 2sc1819m.pdf Size:56K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1819M DESCRIPTION ·With TO-220 package ·High VCEO ·Large PC APPLICATIONS ·For use in line-operated color TV chroma output circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emitter Absolute maximum ratings (Ta=2

1.1081. 2sc1504.pdf Size:130K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1504 DESCRIPTION ·With TO-66 package ·Continuous collector current-IC=2A ·Power dissipation -PD=40W @TC=25? APPLICATIONS ·High speed switching and linear amplification ·Switching regulators ,converters PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and s

1.1082. 2sc1456.pdf Size:127K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1456 DESCRIPTION ·With TO-66 package ·High collector-emitter voltage : VCEO=300V APPLICATIONS ·For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum

1.1083. 2sc1348.pdf Size:127K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1348 DESCRIPTION · ·With TO-3 package ·High power dissipation APPLICATIONS ·For TV horizontal deflection output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS V

1.1084. 2sc1922.pdf Size:115K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1922 DESCRIPTION Ў¤ With TO-3 package Ў¤ High breakdown voltage Ў¤ High speed switching APPLICATIONS Ў¤ For TV horizontal output applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCB

1.1085. 2sc1368.pdf Size:113K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1368 DESCRIPTION ·With TO-126 package ·Low collector saturation voltage APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VC

1.1086. 2sc1061.pdf Size:145K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1061 DESCRIPTION ·Low Collector Saturation Voltage- :VCE(sat)= 1.0(V)(Max)@ IC= 2A ·DC Current Gain- : hFE= 35-320 @ IC= 0.5A ·Complement to Type 2SA671 APPLICATIONS ·Designed for use in low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALU

1.1087. 2sc1195.pdf Size:113K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1195 DESCRIPTION Ў¤ With TO-3 package Ў¤ High power dissipation Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ For line operated audio output amplifier and switching power supply drivers applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol D

1.1088. 2sc1157.pdf Size:113K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1157 DESCRIPTION ·With TO-202 package ·High transition frequency ·Complement to type 2SA647 APPLICATIONS ·For power amplifier switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratings (Ta=25?)

1.1089. 2sc1433.pdf Size:127K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1433 DESCRIPTION · ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·For high voltage switching power amplifier applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CON

1.1090. 2sc1450.pdf Size:127K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1450 DESCRIPTION ·With TO-66 package ·Wide area of safe operation ·High collector-emitter breakdown voltage :VCEO=150V(min) ·Complement to type 2SA766 APPLICATIONS ·For power amplifier and vertical output applications. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified

1.1091. 2sc1905.pdf Size:117K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1905 DESCRIPTION Ў¤ With TO-220C package Ў¤ High breakdown voltage Ў¤ Large collector power dissipation APPLICATIONS Ў¤ Color TV horizontal deflection driver PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VC

1.1092. 2sc1667.pdf Size:127K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1667 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·For use in high power audio amplifier applications and high voltage switching regulator circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and sym

1.1093. 2sc1907.pdf Size:155K _inchange_semiconductor

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC1907 DESCRIPTION ·Low Noise ·High Gain Bandwidth Product APPLICATIONS ·Designed for VHF TV tuner and local oscillator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 19 V VEBO Emitter-Base Voltage 2 V

1.1094. 2sc1585.pdf Size:127K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1585 DESCRIPTION ·With TO-3 package ·High power dissipation ·High current capability APPLICATIONS ·For audio power amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(T

1.1095. 2sc1722.pdf Size:57K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1722 DESCRIPTION · ·With TO-220C package ·High breakdown voltage ·High transition frequency APPLICATIONS ·Low frequency power amplifier ·TV horizontal/vertical driver PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBO

1.1096. 2sc1226_2sc1226a.pdf Size:180K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1226 2SC1226A DESCRIPTION ·With TO-202 package ·Complement to type 2SA699/699A APPLICATIONS ·For medium power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CO

1.1097. 2sc1730.pdf Size:81K _inchange_semiconductor

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC1730 DESCRIPTION ·Low Base Time Constant; rbb’ • CC = 10 ps TYP. ·High Gain Bandwidth Product fT= 1100 MHz TYP. ·Low Output Capacitance; COB = 1.5 pF Max. APPLICATIONS ·Designed for TV VHF, UHF tuner oscillator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE U

1.1098. 2sc1970.pdf Size:204K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1970 DESCRIPTION ·High Power Gain- : Gpe? 9.2dB,f= 175MHz, PO= 1W; VCC= 13.5V ·High Reliability APPLICATIONS ·Designed for RF power amplifiers on VHF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Colle

1.1099. 2sc1577.pdf Size:127K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1577 DESCRIPTION ·With TO-3 package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=?) SYMBOL

1.1100. 2sc1161.pdf Size:127K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1161 DESCRIPTION ·With TO-66 package ·Low collector saturation voltage APPLICATIONS ·For low frequency high voltage power amplifier TV vertical deflection output applications. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute

1.1101. 2sc1875.pdf Size:116K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1875 DESCRIPTION Ў¤ With TO-3 package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Designed for use in large screen color deflection circuits PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO

1.1102. 2sc1402.pdf Size:127K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1402 DESCRIPTION ·With TO-3 package ·Wide area of safe operation APPLICATIONS ·For audio frequency power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS

1.1103. 2sc1893.pdf Size:113K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1893 DESCRIPTION Ў¤ With TO-3 package Ў¤ High breakdown voltage APPLICATIONS Ў¤ For line-operated horizontal deflection output applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO

1.1104. 2sc1847.pdf Size:146K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2SA886 Ў¤ Low collector saturation APPLICATIONS Ў¤ For medium output power amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2SC1847 Ў¤ Absolute Maximun Ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC

1.1105. 2sc1586.pdf Size:128K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1586 DESCRIPTION ·With TO-3 package ·High power dissipation ·High current capability APPLICATIONS ·For audio power amplifier and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(T

1.1106. 2sc1431.pdf Size:127K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1431 DESCRIPTION ·With TO-66 package ·Excellent safe operating area APPLICATIONS ·For use in high frequency power amplifier applications. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER

1.1107. 2sc1826.pdf Size:56K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1826 DESCRIPTION ·With TO-220 package ·Collector current :IC=4A ·Collector power dissipation :PC=30W@TC=25? APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and sy

1.1108. 2sc1445.pdf Size:127K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1445 DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For switching and wide-band amplifier applications. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum

1.1109. 2sc1568.pdf Size:215K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1568 DESCRIPTION ·With TO-126 package ·Complement to type 2SA900 ·Low collector saturation voltage APPLICATIONS ·For low voltage type medium output power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UN

1.1110. 2sc1419.pdf Size:56K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1419 DESCRIPTION ·With TO-220 package ·Large collector power dissipation APPLICATIONS ·For medium power amplifier applicattions PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYM

1.1111. 2sc1580.pdf Size:129K _inchange_semiconductor

All Transistors. C1 Datasheet

C1 Transistor. Datasheet pdf. Equivalent

C1 Datasheet (PDF)