C155 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: C155

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.8 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 25 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 120 MHz

Ganancia de corriente contínua (hFE): 50

Encapsulados: TO92

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C155 datasheet

 0.1. Size:141K  sanyo
 fc155.pdf pdf_icon

C155

Ordering number EN5063 FC155 PNP Epitaxial Planar Silicon Transistor (With bias resistances) PNP Epitaxail Planar Silicon Transistor Constant-Current Circuit Applications Features Package Dimensions Complex type of 2 devices (transistor with resis- unit mm tances and low saturation transistor) contained in one 2104A package, facilitating high-density mounting. [FC155] Electrical

 0.2. Size:1163K  infineon
 bsc155n06nd.pdf pdf_icon

C155

BSC155N06ND MOSFET PG-TDSON-8-4 OptiMOSTM-T2 Power Transistor, 60 V 8 1 7 Features 2 6 3 5 4 Dual N-channel,Normal Level Fast switching MOSFETs 175 C operating temperature Green product (RoHS compliant) 1 8 2 7 100% Avalanche tested 3 6 5 4 Optimized technology for drives applications Halogen-free according to IEC61249-2-21 Superior thermal resis

 0.3. Size:415K  supertex
 tc1550.pdf pdf_icon

C155

TC1550 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description 500V breakdown voltage The Supertex TC1550 consists of a high voltage N-channel and Independent N- and P-channels P-channel MOSFET in an 8-Lead SOIC package. This is an Electrically isolated N- and P-channels enhancement-mode (normally-off) transistor utilizing an advanced Low input c

Otros transistores... C106, C112, C1-12, C118, C119, C12-28, C1-28, C150, BC639, C155P, C166, C166P, C168, C169, C2, C25-12, C25-28