C155 Todos los transistores

 

C155 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: C155
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.8 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 25 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 120 MHz
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: TO92
 

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C155 Datasheet (PDF)

 0.1. Size:141K  sanyo
fc155.pdf pdf_icon

C155

Ordering number:EN5063FC155PNP Epitaxial Planar Silicon Transistor (With bias resistances)PNP Epitaxail Planar Silicon TransistorConstant-Current Circuit ApplicationsFeatures Package Dimensions Complex type of 2 devices (transistor with resis-unit:mmtances and low saturation transistor) contained in one2104Apackage, facilitating high-density mounting.[FC155]Electrical

 0.2. Size:1163K  infineon
bsc155n06nd.pdf pdf_icon

C155

BSC155N06NDMOSFETPG-TDSON-8-4OptiMOSTM-T2 Power Transistor, 60 V8 17Features 26354 Dual N-channel,Normal Level Fast switching MOSFETs 175C operating temperature Green product (RoHS compliant)182 7 100% Avalanche tested3 654 Optimized technology for drives applications Halogen-free according to IEC61249-2-21 Superior thermal resis

 0.3. Size:415K  supertex
tc1550.pdf pdf_icon

C155

TC1550N- and P-Channel Enhancement-Mode Dual MOSFETFeatures General Description 500V breakdown voltageThe Supertex TC1550 consists of a high voltage N-channel and Independent N- and P-channelsP-channel MOSFET in an 8-Lead SOIC package. This is an Electrically isolated N- and P-channelsenhancement-mode (normally-off) transistor utilizing an advanced Low input c

Otros transistores... C106 , C112 , C1-12 , C118 , C119 , C12-28 , C1-28 , C150 , 2SA1015 , C155P , C166 , C166P , C168 , C169 , C2 , C25-12 , C25-28 .

History: BD529-1 | D11C5B1

 

 
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