C155 Datasheet and Replacement
Type Designator: C155
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO92
C155 Substitution
C155 Datasheet (PDF)
fc155.pdf

Ordering number:EN5063FC155PNP Epitaxial Planar Silicon Transistor (With bias resistances)PNP Epitaxail Planar Silicon TransistorConstant-Current Circuit ApplicationsFeatures Package Dimensions Complex type of 2 devices (transistor with resis-unit:mmtances and low saturation transistor) contained in one2104Apackage, facilitating high-density mounting.[FC155]Electrical
bsc155n06nd.pdf

BSC155N06NDMOSFETPG-TDSON-8-4OptiMOSTM-T2 Power Transistor, 60 V8 17Features 26354 Dual N-channel,Normal Level Fast switching MOSFETs 175C operating temperature Green product (RoHS compliant)182 7 100% Avalanche tested3 654 Optimized technology for drives applications Halogen-free according to IEC61249-2-21 Superior thermal resis
tc1550.pdf

TC1550N- and P-Channel Enhancement-Mode Dual MOSFETFeatures General Description 500V breakdown voltageThe Supertex TC1550 consists of a high voltage N-channel and Independent N- and P-channelsP-channel MOSFET in an 8-Lead SOIC package. This is an Electrically isolated N- and P-channelsenhancement-mode (normally-off) transistor utilizing an advanced Low input c
Datasheet: C106 , C112 , C1-12 , C118 , C119 , C12-28 , C1-28 , C150 , 2SA1015 , C155P , C166 , C166P , C168 , C169 , C2 , C25-12 , C25-28 .
History: DP030
Keywords - C155 transistor datasheet
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History: DP030



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