C168 Todos los transistores

 0.1. Size:217K  infineon
 igc168t170s8rh.pdf

IGC168T170S8RH IGBT3 Power Chip Features This chip is used for 1700V Trench + Field stop technology power modules C low switching losses and saturation losses soft turn off Applications positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package IGC168T170S8RH 1700V 150A 13.38 x 12.58 mm2 sawn on foil

 0.2. Size:217K  infineon
 igc168t170s8rm.pdf

IGC168T170S8RM IGBT3 Power Chip Features This chip is used for 1700V Trench + Field stop technology power modules C low switching losses soft turn off Applications positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package IGC168T170S8RM 1700V 150A 13.38 x 12.58 mm2 sawn on foil Mechanical Parameters

 0.3. Size:56K  panasonic
 2sc1688 e.pdf

Transistor 2SC1688 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features Small common emitter reverse transfer capacitance Cre. High transition frequency fT. Center at the emitter pin. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 50 V 1.27 1.27

 0.4. Size:39K  no
 2sc1683.pdf

 0.5. Size:55K  no
 2sc1684.pdf

 0.6. Size:37K  no
 2sc1686.pdf

 0.7. Size:48K  no
 2sc1687.pdf

 0.8. Size:151K  cdil
 bc167ab bc168abc bc169.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC167A, BC167B BC168A, BC168B, BC168C BC169B, BC169C TO-92 Plastic Package AF Pre and Driver Stages as well as for Universal Application. ABSOLUTE MAXIMUM RATINGS(Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL BC167 BC168 BC169 UNITS VCEO Collec

 0.9. Size:228K  cdil
 csc1684 1685 q r s.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS CSC1684, CSC1685 TO-92 Plastic Package B C E ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL CSC1684 CSC1685 UNITS VCEO Collector Emitter Voltage 25 50 V VCBO Collector Base Voltage 30 60 V VEBO Emitter Base Voltage 7 V ICP Collector Current Peak 200 m

 0.10. Size:228K  microelectronics
 bc107 bc108 bc109 bc167 bc168 bc169 bc237 bc238 bc239 bc317 bc318 bc319.pdf

 0.11. Size:189K  inchange semiconductor
 2sc1683.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1683 DESCRIPTION Silicon NPN triple diffused mesa High breakdown voltage Large collector dissipation Complementary pair with 2SA843 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AF power amplifier Color TV vertical deflection output ABSO