C168 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: C168
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.825 W
Tensión colector-emisor (Vce): 7 V
Tensión emisor-base (Veb): 1 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 120 MHz
Capacitancia de salida (Cc): 40 pF
Ganancia de corriente contínua (hfe): 300
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar C168
C168 Datasheet (PDF)
igc168t170s8rh.pdf
IGC168T170S8RH IGBT3 Power Chip Features: This chip is used for: 1700V Trench + Field stop technology power modules C low switching losses and saturation losses soft turn off Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package IGC168T170S8RH 1700V 150A 13.38 x 12.58 mm2 sawn on foil
igc168t170s8rm.pdf
IGC168T170S8RM IGBT3 Power Chip Features: This chip is used for: 1700V Trench + Field stop technology power modules C low switching losses soft turn off Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package IGC168T170S8RM 1700V 150A 13.38 x 12.58 mm2 sawn on foil Mechanical Parameters
2sc1688 e.pdf
Transistor2SC1688Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesSmall common emitter reverse transfer capacitance Cre.High transition frequency fT.Center at the emitter pin.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 50 V1.27 1.27
bc167ab bc168abc bc169.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS BC167A, BC167BBC168A, BC168B, BC168CBC169B, BC169CTO-92Plastic PackageAF Pre and Driver Stages as well as for Universal Application.ABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL BC167 BC168 BC169 UNITSVCEOCollec
csc1684 1685 q r s.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS CSC1684, CSC1685TO-92Plastic PackageBCEABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL CSC1684 CSC1685 UNITSVCEOCollector Emitter Voltage 25 50 VVCBOCollector Base Voltage 30 60 VVEBOEmitter Base Voltage 7 VICPCollector Current Peak 200 m
bc107 bc108 bc109 bc167 bc168 bc169 bc237 bc238 bc239 bc317 bc318 bc319.pdf
2sc1683.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1683DESCRIPTIONSilicon NPN triple diffused mesaHigh breakdown voltageLarge collector dissipationComplementary pair with 2SA843100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAF power amplifierColor TV vertical deflection outputABSO
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
