C168 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: C168
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.825 W
Tensión colector-emisor (Vce): 7 V
Tensión emisor-base (Veb): 1 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 120 MHz
Capacitancia de salida (Cc): 40 pF
Ganancia de corriente contínua (hfe): 300
Paquete / Cubierta: TO92
Búsqueda de reemplazo de C168
C168 Datasheet (PDF)
igc168t170s8rh.pdf

IGC168T170S8RH IGBT3 Power Chip Features: This chip is used for: 1700V Trench + Field stop technology power modules C low switching losses and saturation losses soft turn off Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package IGC168T170S8RH 1700V 150A 13.38 x 12.58 mm2 sawn on foil
igc168t170s8rm.pdf

IGC168T170S8RM IGBT3 Power Chip Features: This chip is used for: 1700V Trench + Field stop technology power modules C low switching losses soft turn off Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package IGC168T170S8RM 1700V 150A 13.38 x 12.58 mm2 sawn on foil Mechanical Parameters
2sc1688 e.pdf

Transistor2SC1688Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesSmall common emitter reverse transfer capacitance Cre.High transition frequency fT.Center at the emitter pin.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 50 V1.27 1.27
Otros transistores... C119 , C12-28 , C1-28 , C150 , C155 , C155P , C166 , C166P , A1266 , C169 , C2 , C25-12 , C25-28 , C266 , C266P , C2-8 , C2-8Z .
History: 2SD287
History: 2SD287



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