C168 Datasheet and Replacement
Type Designator: C168
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.825 W
Maximum Collector-Emitter Voltage |Vce|: 7 V
Maximum Emitter-Base Voltage |Veb|: 1 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Noise Figure, dB: -
Package: TO92
C168 Substitution
C168 Datasheet (PDF)
igc168t170s8rh.pdf

IGC168T170S8RH IGBT3 Power Chip Features: This chip is used for: 1700V Trench + Field stop technology power modules C low switching losses and saturation losses soft turn off Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package IGC168T170S8RH 1700V 150A 13.38 x 12.58 mm2 sawn on foil
igc168t170s8rm.pdf

IGC168T170S8RM IGBT3 Power Chip Features: This chip is used for: 1700V Trench + Field stop technology power modules C low switching losses soft turn off Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package IGC168T170S8RM 1700V 150A 13.38 x 12.58 mm2 sawn on foil Mechanical Parameters
2sc1688 e.pdf

Transistor2SC1688Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesSmall common emitter reverse transfer capacitance Cre.High transition frequency fT.Center at the emitter pin.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 50 V1.27 1.27
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SD1782KFRA | BUY79 | CST1740 | 2SA0879 | CSC2120O | BTNA44M3 | BD708
Keywords - C168 transistor datasheet
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History: 2SD1782KFRA | BUY79 | CST1740 | 2SA0879 | CSC2120O | BTNA44M3 | BD708



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