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C2 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: C2
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.625 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 20 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 150
   Paquete / Cubierta: TO92
 

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C2 Datasheet (PDF)

 ..1. Size:92K  rohm
umc2n fmc2a c2 sot23-5sot353.pdf pdf_icon

C2

TransistorsPower management(dual digital transistors)UMC2N / FMC2AFFeatures FExternal dimensions (Units: mm)1) Includes a DTA124E and aDTC124E transistor in a singleUMT and a SMT package.2) Ideal for power switch circuits.3) Mounting cost and area can be cutin half.FStructureA PNP and a NPN digital transistor(each with two built in resistors)The following characteris

 0.1. Size:625K  1
hyg017n04ls1c2.pdf pdf_icon

C2

HYG017N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/135A D D D D D D D D RDS(ON)= 1.7m (typ.) @VGS = 10V RDS(ON)= 2.3m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manageme

 0.2. Size:309K  1
2sc2063 2sc4039.pdf pdf_icon

C2

 0.3. Size:709K  1
hyg007n03ls1c2.pdf pdf_icon

C2

HYG007N03LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 30V/220A D D D D D D D D RDS(ON)= 0.63m (typ.) @VGS = 10V RDS(ON)= 0.96 m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manag

Otros transistores... C1-28 , C150 , C155 , C155P , C166 , C166P , C168 , C169 , 13001-A , C25-12 , C25-28 , C266 , C266P , C2-8 , C2-8Z , C3-12 , C3-28 .

History: BCR196W | SS8050D | ESM261 | BFJ21 | KT312A | KT3132D-2 | BFR77

 

 
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