C2 Datasheet, Equivalent, Cross Reference Search

TransistorsPower management(dual digital transistors)UMC2N / FMC2AFFeatures FExternal dimensions (Units: mm)1) Includes a DTA124E and aDTC124E transistor in a singleUMT and a SMT package.2) Ideal for power switch circuits.3) Mounting cost and area can be cutin half.FStructureA PNP and a NPN digital transistor(each with two built in resistors)The following characteris

HYG017N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/135A D D D D D D D D RDS(ON)= 1.7m (typ.) @VGS = 10V RDS(ON)= 2.3m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manageme

HYG007N03LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 30V/220A D D D D D D D D RDS(ON)= 0.63m (typ.) @VGS = 10V RDS(ON)= 0.96 m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manag

HYG015N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/150A D D D D D D D D RDS(ON)= 1.4m (typ.) @VGS = 10V RDS(ON)= 2.0m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manageme

HY3203C2Single N-Channel Enhancement Mode MOSFETFeature Description Pin Description 30V/120AD D D D D D D DRDS(ON)= 1.9m(typ.) @VGS = 10VRDS(ON)= 2.5m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and RuggedS S S G G S S S Halogen- Free Devices AvailablePin1 PPAK5*6-8L Applications Switching Application Power Management for DC/DCN-Channel MOSFET

HYG092N10LS1C2Single N-Channel Enhancement Mode MOSFETFeature Pin DescriptionD D D DD D D D 100V/60ARDS(ON)= 7.8 m (typ.) @ VGS = 10VRDS(ON)= 11.5 m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S S(RoHS Compliant)Pin1PDFN8L5x6Applications High Frequency Point-of-Load Synchronous

HYG013N03LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 30V/150A D D D D D D D D RDS(ON)= 1.3m (typ.) @VGS = 10V RDS(ON)= 2.0m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manageme

HYG035N02KA1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 20V/95A D D D D D D D D RDS(ON)= 2.6 m (typ.) @VGS = 4.5V RDS(ON)= 3.1 m (typ.) @VGS = 2.5V RDS(ON)= 4.4 m (typ.) @VGS = 1.8V 100% Avalanche Tested Reliable and Rugged G S S S S S S G Halogen- Free Devices Available Pin1 PDFN8L(5x6) Applications S

HYG055N08NS1C2 N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/85A D D D D D D D DRDS(ON)=4.8 m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Halogen-Free Devices Available (RoHS Compliant) S S S G G S S SPin1 PPAK5*6 8L-Applications Switching application Power management for inverter systems Motor contr

HY15P03C2 Single P-Channel Enhancement Mode MOSFETFeature Pin DescriptionD D D D D D D D -30V/-60ARDS(ON)= 4.8m(typ.) @VGS =-10VRDS(ON)= 6.8m(typ.) @VGS =-4.5V Reliable and Rugged Halogen Free Devices AvailableS S S G G S S S(RoHS Compliant)Pin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Networking DC-DC Powe

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC20N03 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 8.5m@10V30 V20A12m@4.5VDESCRIPTION The CJAC20N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES

HYG023N03LR1C2Single N-Channel Enhancement Mode MOSFETFeature Description Pin Description 30V/125AD D D D D D D D RDS(ON)= 1.5m (typ.) @VGS = 10VRDS(ON)= 2.1m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S S S S S G Pin1 PPAK5*6-8L Applications Switching Application Power Management for DC/

NTTFS4C25NPower MOSFET30 V, 27 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) MAX ID MAXApplications17 mW @ 10 V DC-DC Converters

HYG025N06LS1C2Single N-Channel Enhancement Mode MOSFETFeature Pin DescriptionD D D DD D D D 60V/170ARDS(ON)= 2.1 m (typ.) @ VGS = 10VRDS(ON)= 3.2 m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S S(RoHS Compliant)Pin1PDFN8L5x6Applications High Frequency Point-of-Load Synchronous B

HY1506C2Single N-Channel Enhancement Mode MOSFET Feature Pin Description 60V/48AD D D D D D D DRDS(ON)= 10.5m(typ.)@VGS = 10V RDS(ON)= 12.2m(typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available S S S G G S S SPin1 PPAK5*6-8LApplications High Frequency Point-of-Load Synchronous Buck Converter Power Tool Application

HY12P03C2 P-Channel Enhancement Mode MOSFETFeature Description Pin Description -30V/-50AD D D D D D D DRDS(ON)= 10.4m(typ.) @VGS = -10VRDS(ON)= 14.2m(typ.) @VGS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S SPin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Po

HYG045N03LA1C2Single N-Channel Enhancement Mode MOSFETFeature Pin Description 30V/78AD D D DD D D DRDS(ON)= 3.6 m(typ.) @VGS = 10VRDS(ON)= 4.8 m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S SS S S GPDFN8L(5x6)Applications Load Switch Lithium battery protect boardSingle N-Channel MOSFETO

HYG110P04LQ2C2 Single P-Channel Enhancement Mode MOSFET Feature Description Pin Description -40V/-55A D D D D D D D D RDS(ON)= 9.0 m (typ.) @VGS = - 10V RDS(ON)= 13.0 m (typ.) @VGS = - 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Powe

HY3503C2Single N-Channel Enhancement Mode MOSFETFeature Description Pin Description 30V/150AD D D D D D D DRDS(ON)= 2.0m(typ.) @VGS = 10VRDS(ON)= 2.7m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and RuggedS S S G G S S S Halogen- Free Devices AvailablePin1 PPAK5*6-8L Applications Switching Application Power Management for DC/DCN-Channel MOSFET

N-Channel Enhancement Mode PKC26BBNIKO-SEM Field Effect Transistor PDFN 5x6PHalogen-Free & Lead-FreePRODUCT SUMMARY V(BR)DSS RDS(ON) ID4 D30V 1.6m 151A GFeatures S Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. D D D D Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. G.

HY1904C2 Single N-Channel Enhancement Mode MOSFETFeature Description Pin Description 40V/65ARDS(ON)= 5.1m(typ.)@VGS = 10VD D D D D D D DRDS(ON)= 6.2m(typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S SPin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Powe

HYG009N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/200A D D D D D D D D RDS(ON)= 0.75m (typ.) @VGS = 10V RDS(ON)= 1.05m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manage

HYG035N06LS1C2Single N-Channel Enhancement Mode MOSFETFeature Pin Description 65V/90AD D D DD D D DRDS(ON)= 2.9m(typ.) @VGS = 10VRDS(ON)= 4.7m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S SS S S GPDFN8L(5x6)Applications Load Switch Lithium battery protect board Motor drive for electric

HY030N06C2 Single N-Channel Enhancement Mode MOSFETFeature Pin Description 65V/100AD D D D D D D DRDS(ON)= 2.4 m(typ.)@VGS = 10VRDS(ON)= 3.7 m(typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S SPin1 PPAK5*6-8L Applications Hard switched and high frequency circuits Power switching applicati

HY1906C2 Single N-Channel Enhancement Mode MOSFETFeature Pin Description 60V/70AD D D D D D D DRDS(ON)= 5.7 m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S SPin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Power Tool Application Networking DC-DC Powe

HYG019N04NR1C2Single N-Channel Enhancement Mode MOSFETFeature Pin Description 40V/127AD D D DD D D DRDS(ON)= 2.0 m(typ.) @VGS = 10V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S SS S S GPDFN8L(5x6)Applications Load Switch Battery ProtectionSingle N-Channel MOSFETOrdering and Marking InformationPackage Code

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5X6-8L Plastic-Encapsulate MOSFETS CJAC20N10 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB56-8L 31 10 20 40 DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a dra

HYG072N10LS1C2Single N-Channel Enhancement Mode MOSFETFeature Pin DescriptionD D D DD D D D 100V/80ARDS(ON)= 6.0 m (typ.) @ VGS = 10VRDS(ON)= 8.8 m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S S(RoHS Compliant)PPAK5*6-8LPin1Applications High Frequency Point-of-Load Synchronous Buck C

HYG011N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/165A D D D D D D D D RDS(ON)= 1.1m (typ.) @VGS = 10V RDS(ON)= 1.5m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manageme

HYG025N04NA1C2Single N-Channel Enhancement Mode MOSFETFeature Pin Description 40V/190ARDS(ON)= 1.4m(typ.) @VGS = 10VD D D DD D D D 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S SS S S GPDFN8L(5x6)Applications Load Switch Lithium battery protect boardSingle N-Channel MOSFETOrdering and Marking InformationPac

HY1803C2Single N-Channel Enhancement Mode MOSFETFeature Description Pin Description 30V/80AD D D D D D D DRDS(ON)= 2.4m(typ.) @VGS = 10VRDS(ON)= 2.8m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S SPin1 PPAK5*6-8L Applications Switching Application Power Management for DC/DCN-Channel MOSFET

WML38N MK38N60CN60C2, WM C2 WMN38N60C2, WMM38N MJ38N60CN60C2, WM C2 600V 0.089 S0 Super Junction Power MOSFETDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C2 is ate ce

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MSC2295BT1/DNPN RF Amplifier TransistorsMSC2295-BT1Surface MountMSC2295-CT1COLLECTORMotorola Preferred Devices3322 11BASE EMITTERMAXIMUM RATINGS (TA = 25C)CASE 318D03, STYLE 1Rating Symbol Value UnitSC59CollectorBase Voltage V(BR)CBO 30 VdcCollectorEmitter Voltage V(BR)CEO 20 Vdc

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC212/DAmplifier TransistorsBC212,BPNP SiliconBC213COLLECTORBC21432BASE1EMITTER1MAXIMUM RATINGS23BC BC BC212 213 214Rating Symbol UnitCASE 2904, STYLE 17TO92 (TO226AA)CollectorEmitter Voltage VCEO 50 30 30 VdcCollectorBase Voltage VCBO 60 45 45 VdcEmitte

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC237/DAmplifier TransistorsBC237,A,B,CNPN SiliconBC238B,CBC239,CCOLLECTOR12BASE3EMITTER1MAXIMUM RATINGS23BC BC BC237 238 239Rating Symbol UnitCASE 2904, STYLE 17TO92 (TO226AA)CollectorEmitter Voltage VCEO 45 25 25 VdcCollectorEmitter Voltage VCES 50 30 30 VdcEmitterBa

PD-9.1544IRGBC20SD2P O O Standard Speed CoPackINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 600V Switching-loss rating includes all 'tail' lossesVCE( ) 2.4VSAT HEXFREDTM soft ultrafast diodesG Optimized for line frequency operation (to 400HZ)@VGE = 15V, IC = 10AEDescriptionn-channelCo-pa

PD - 97289IRG4PC20UPbFUltraFast Speed IGBTPROVISIONALINSULATED GATE BIPOLAR TRANSISTORCFeaturesVCES = 600V UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant modeVCE(on) typ. = 1.85VG Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than@VGE = 15V, IC = 6.5AE Generatio

PD 91785AIRG4IBC20WINSULATED GATE BIPOLAR TRANSISTORFeaturesC Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications VCES = 600V 2.5kV, 60s insulation voltage V Industry-benchmark switching losses improveVCE(on) typ. = 2.16VG efficiency of all power supply topologies 50% reduction of Eoff parameter@VGE = 15V, IC = 6

PD- 91793IRG4BC20SD Standard Speed IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Extremely low voltage drop 1.4Vtyp. @ 10AVCES = 600V S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4VCE(on) typ. = 1.4V KHz in brushless DC drives.G Very Tig

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PD-9.1431IRGCC20UETARGETIRGCC20UE IGBT Die in Wafer FormC600 VSize 2Ultra-Fast SpeedG5" WaferEElectrical Characteristics ( Wafer Form )Parameter Description Guaranteed (Min/Max) Test ConditionsVCE (on) Collector-to-Emitter Saturation Voltage 3.1V Max. IC = 6.5A, TJ = 25C, VGE = 15VV(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, ICES = 250A, V

PD - 9.686AIRGBC20FINSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBTFeaturesC Switching-loss rating includes all "tail" lossesVCES = 600V Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curveVCE(sat) 2.8VG@VGE = 15V, IC = 9.0AEn-channelDescriptionInsulated Gate Bipolar Transistors (IGBTs) from International Rect

PD - 9.1031IRGPC20UINSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBTFeaturesC Switching-loss rating includes all "tail" lossesVCES = 600V Optimized for high operating frequency (over5kHz) See Fig. 1 for Current vs. Frequencycurve VCE(sat) 3.0VG@VGE = 15V, IC = 6.5AEn-channelDescriptionInsulated Gate Bipolar Transistors (IGBTs) from International Rectifier

IRGBC20FD290% Vge+VgeVceSame typedevice asD.U.T.90% Ic10% VceIcIc5% Ic430F80%td(off) tfof VceD.U.T.t1+5SEoff = Vce ic dtt1Fig. 18a - Test Circuit for Measurement ofILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2Fig. 18b - Test Waveforms for Circuit of Fig. 18a, DefiningEoff, td(off), tftrrtrrGATE VOLTAGE D.U.T.Qrr = i

PD -95965IRG4BC20FD-SPbFINSULATED GATE BIPOLAR TRANSISTOR WITH Fast CoPack IGBTULTRAFAST SOFT RECOVERY DIODEFeatures Fast: Optimized for medium operatingC frequencies ( 1-5 kHz in hard switching, >20VCES = 600V kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency thanVCE(on) typ. = 1.66VG Generation 3

PD - 9.1144IRGPC20MD2INSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedWITH ULTRAFAST SOFT RECOVERY Fast CoPack IGBTDIODEFeaturesCVCES = 600V Short circuit rated -10s @125C, V = 15VGE Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodesVCE(sat) 2.5V Optimized for medium operating frequency ( 1 toG 10kHz) See Fig.

PD - 93867IRGC25B120UBDie in Wafer FormFeaturesFeaturesFeaturesFeaturesFeatures1200VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)=25A UltraFastVCE(on) typ.=3.37V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientUltraFast IGBTGBenefitsShort Circuit Rated Benchmark Efficiency

PD- 91757IRG4CC20UBIRG4CC20UB IGBT Die in Wafer FormC600 VSize 2Ultra-Fast SpeedG6" WaferEElectrical Characteristics ( Wafer Form )Parameter Description Guaranteed (Min/Max) Test ConditionsVCE (on) Collector-to-Emitter Saturation Voltage 4.5V Max. IC = 10A, TJ = 25C, VGE = 15VV(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, ICES = 250A, VGE = 0V

IGBT Designers ManualData SheetsThe IGBT devices listed in this DesignersManual represent International RectifiersIGBT line as of August, 1994. The datapresented in this manual supersedes allprevious specifications.C-2PD - 9.687AIRGBC20SINSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBTFeaturesC Switching-loss rating includes all "tail" lossesVCES = 6

PD - 91731AIRG4RC20FFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20VCES = 600V kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.82V parameter distribution and higher efficiency than G previous generation IGBTs. Industry standard TO-252AA

PD - 9.1014IRFBC20S/LPRELIMINARYHEXFET Power MOSFET Surface Mount (IRFBC20S)D Low-profile through-hole (IRFBC20L) VDSS = 600V Available in Tape & Reel (IRFBC20S) Dynamic dv/dt RatingRDS(on) = 4.4 150C Operating TemperatureG Fast SwitchingID = 2.2A Fully Avalanche RatedSDescriptionThird generation HEXFETs from international Rectifier provide the designer

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PD - 9.1129IRGPC20KINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedUltraFast IGBTFeaturesC Short circuit rated - 10s @ 125C, VGE = 15VVCES = 600V Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over5kHz) See Fig. 1 for Current vs. Frequency VCE(sat) 3.5VGcurve@VGE = 15V, IC = 6.0AEn-channelDescription

D DI I TI T D T I T I T FeaturesFeaturesFeaturesFeaturesFeaturesC UltraFast: optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.85VG parameter distribution and higher efficiency than Generatio

PD - 9.1105IRGBC20KD2INSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedWITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBTFeaturesCVCES = 600V Short circuit rated -10s @125C, V = 15VGE Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodesVCE(sat) 3.5V Optimized for high operating frequency (over 5kHz)G See Fig.

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PD - 9.1128IRGBC20KINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedUltraFast IGBTFeaturesC Short circuit rated - 10s @ 125C, V = 15VGEVCES = 600V Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz)See Fig. 1 for Current vs. Frequency curve VCE(sat) 3.5VG@VGE = 15V, IC = 6.0AEn-channelDescriptio

PD - 96295IRGC2B60KBDie in Wafer Form600VFeaturesC IC(nom)= 2.0A Non Punch Through (NPT) Technology Low VCE(on)VCE(on) typ.=2.0V @ 10s Short Circuit CapabilityIC(nom) @ 25C Square RBSOAMotor Control IGBT Positive VCE(on) Temperature CoefficientGShort Circuit RatedBenefitsE150mm Wafer Benchmark Efficiency for Motor Control Applicatio

PD - 94563IRGC26B120KBDie in Wafer FormFeatures1200VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)=25A Low VCE(on)VCE(on) typ.=2.35V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark Efficiency for Motor Control ApplicationsE

PD -91752AIRG4IBC20UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures 2.5kV, 60s insulation voltage VCES = 600V 4.8 mm creapage distance to heatsink UltraFast: Optimized for high operatingVCE(on) typ. = 1.85V frequencies 8-40 kHz in hard switching, >200G kHz in resonant mode IGBT co-packaged with HEXF

D I Short Circuit RatedI T D T I T I T UltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC High short circuit rating optimized for motor control,VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with highVCE(on) typ. = 2.27V switching speedG Latest generation design

PD - 97723PDP TRENCH IGBTIRG7PC28UPbFKey ParametersFeaturesVCE min600 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 40A1.70 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applicationsIRP max @ TC= 25C 225 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl

PD - 9.1130IRGBC20K-SINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedUltraFast Fast IGBT.A=JKHAIC Short circuit rated - 10s @ 125C, VGE = 15VVCES = 600V Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over5kHz) See Fig. 1 for Current vs. Frequency VCE(sat) 3.5VGcurve@VGE = 15V, IC = 6.0AEn-channelDesc

PD - 9.1141IRGBC20MD2-SINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedWITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBTCFeatures Short circuit rated -10s @125C, V = 15V VCES = 600VGE Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodesVCE(sat) 2.5V Optimized for medium operating frequency ( 1 toG 10kHz) See Fig.

PD - 93777IRFC2907BHEXFET Power MOSFET Die in Wafer FormD 100% Tested at Probe75V Available in Tape and Reel, Chip Pack,RDS(on) = 2.5mSawn on Film and Gel Pack** (typ.) G Ultra Low On-Resistance 6" WaferSElectrical Characteristics *Parameter Description Min Typ. Max Test ConditionsV(BR)DSS Drain-to-Source Breakdown Voltage 75V VGS =

PD - 9.1136IRGPC20MINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedFast IGBTFeaturesC Short circuit rated - 10s @ 125C, VGE = 15VVCES = 600V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency VCE(sat) 2.3VGcurve@VGE = 15V, IC = 8.0AEn-channelDescription

PD - 94375IRGC20B60KBDie in Wafer FormFeaturesFeaturesFeaturesFeaturesFeatures600VC GEN5 Non Punch Through (NPT) TechnologyIC(nom)= 20A Low VCE(on)VCE(on) typ.=1.82V @ 10s Short Circuit Capability Square RBSOAIC(nom) @ 25C Positive VCE(on) Temperature CoefficientMotor Control IGBTGBenefitsShort Circuit Rated Benchmark Effic

PD - 9.1131AIRGBC20M-SINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedFast IGBTFeaturesC Short circuit rated - 10s @ 125C, V = 15VGEVCES = 600V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) 2.3VG@VGE = 15V, IC = 8.0AEn-channelDescript

PD-95640IRG4BC20WINSULATED GATE BIPOLAR TRANSISTORFeaturesC Designed expressly for Switch-Mode Power Supply and PFC (power factor correction)VCES = 600V applications Industry-benchmark switching losses improveVCE(on) typ. = 2.16V efficiency of all power supply topologiesG 50% reduction of Eoff parameter Low IGBT conduction losses@VGE = 15V, IC = 6.5AE

PD- 94049IRG4CC20MBIRG4CC20MB IGBT Die in Wafer FormC600 VSize 2Fast-Speed,GShort Circuit Rated6" WaferEElectrical Characteristics ( Wafer Form )Parameter Description Guaranteed (Min/Max) Test ConditionsVCE (on) Collector-to-Emitter Saturation Voltage 1.6V Max. IC = 3.25A, TJ = 25C, VGE = 15VV(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, ICES

PD- 91873IRFC240HEXFET Power MOSFET Die in Wafer FormD200 VSize 4.0Rds(on)=0.18G5" WaferSElectrical Characteristics ( Wafer Form )Parameter Description Guaranteed (Min/Max) Test ConditionsV(BR)DSS Drain-to-Source Breakdown Voltage 200V Min. VGS = 0V, ID = 100ARDS(on) Static Drain-to-Source On-Resistance 0.180 Max. VGS = 10V, ID = 10AVGS(th) Gate Threshold V

PD -91689AIRG4IBC20KDINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODEUltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC High switching speed optimized for up to 25kHzVCES = 600V with low VCE(on) Short Circuit Rating 10s @ 125C, VGE = 15V Generation 4 IGBT design provides tighterVCE(on) typ. = 2.27V para

PD -91750AIRG4IBC20FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Very Low 1.66V votage dropVCES = 600V 2.5kV, 60s insulation voltage U 4.8 mm creapage distance to heatsinkVCE(on) typ. = 1.66V Fast: Optimized for medium operatingG frequencies ( 1-5 kHz in hard switchi

PD- 91831IRG4CC20FBIRG4CC20FB IGBT Die in Wafer FormC600 VSize 2Fast SpeedG6" WaferEElectrical Characteristics ( Wafer Form )Parameter Description Guaranteed (Min/Max) Test ConditionsVCE (on) Collector-to-Emitter Saturation Voltage 4.5V Max. IC = 3.25A, TJ = 25C, VGE = 15VV(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, ICES = 250A, VGE = 0VVG

PD -94116IRG4BC20MD-SShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHFast IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Rugged: 10sec short circuit capable at VGS=15VVCES = 600V Low VCE(on) for 4 to 10kHz applications IGBT Co-packaged with ultra-soft-recovery antiparallel diode VCE(on) typ. = 1.85VG Industry

PD - 9.1106IRGBC20MD2INSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedWITH ULTRAFAST SOFT RECOVERY Fast Copack IGBTDIODEFeaturesCVCES = 600V Short circuit rated -10s @125C, V = 15VGE Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodesVCE(sat) 2.5V Optimized for medium operating frequency (1 toG 10kHz) See Fig.

IRG4BC20FDPbF Fast CoPack IGBT FeaturesC = G

PD - 94076IRG4BC20W-SINSULATED GATE BIPOLAR TRANSISTORFeatures CFeaturesFeaturesFeaturesFeatures Designed expressly for Switch-Mode PowerVCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improveVCE(on) typ. = 2.16VG efficiency of all power supply topologies 50% reduction of Eoff parameter@VGE = 15V, I

PD - 9.1109IRGPC20KD2INSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedWITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBTFeaturesC Short circuit rated -10s @125C, VGE = 15V VCES = 600V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodesVCE(sat) 3.5V Optimized for high operating frequency (over 5kHz)G See Fig. 1 f

PD -91598AIRG4BC20KD-SINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODE UltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC Short Circuit Rated UltraFast: Optimized forVCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15V Generation 4 IGBT design provides tighterVCE(on)

D I Short Circuit RatedI T D T I T I T UltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC High short circuit rating optimized for motor control, tsc =10s, @360V VCE (start), TJ = 125C, VCES = 600V VGE = 15V Combines low conduction losses with highVCE(on) typ. = 2.27V switching speedG Latest generation desig

PD - 9.1125IRGBC20KD2-SINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedWITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBTC.A=JKHAI Short circuit rated -10s @125C, VGE = 15V VCES = 600V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodesVCE(sat) 3.5V Optimized for high operating frequency (over 5kHz)G See Fig. 1

PD-91449CIRG4BC20UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures UltraFast: Optimized for high operating frequenciesVCES = 600V 8-40 kHz in hard switching, >200kHz in resonant modeVCE(on) typ. = 1.85V Generation 4 IGBT design provides tighter para-G meter distribution and higher efficiency than Generation 3

PD - 9.1022IRGPC20FINSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBTFeaturesC Switching-loss rating includes all "tail" lossesVCES = 600V Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequencycurve VCE(sat) 2.8VG@VGE = 15V, IC = 9.0AEn-channelDescriptionInsulated Gate Bipolar Transistors (IGBTs) from International Recti

PD- 91824IRG4CC20KBIRG4CC20KB IGBT Die in Wafer FormC600 VSize 2Ultra-Fast-Speed,GShort Circuit RatedSpeedE6" WaferElectrical Characteristics ( Wafer Form )Parameter Description Guaranteed (Min/Max) Test ConditionsVCE (on) Collector-to-Emitter Saturation Voltage 4.5V Max. IC = 3.25A, TJ = 25C, VGE = 15VV(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ =

PD - 97569APDP TRENCH IGBTIRG7SC28UPbFKey ParametersFeaturesVCE min600 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 40A1.70 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applicationsIRP max @ TC= 25C 225 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl

D I I TI T D T I T I T Features C Standard: optimized for minimum saturationVCES = 600V voltage and low operating frequencies (

PD- 94077IRG4BC20UD-S UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operating frequenciesVCES = 600V 8-40 kHz in hard switching, >200kHz in resonant modeVCE(on) typ. = 1.85V Generation 4 IGBT design provides tighter para-G meter distribution

PD - 9.681AIRGBC20UINSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBTFeaturesC Switching-loss rating includes all "tail" lossesVCES = 600V Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curveVCE(sat) 3.0VG@VGE = 15V, IC = 6.5AEn-channelDescriptionInsulated Gate Bipolar Transistors (IGBTs) from International Rectifier

PD -91599AIRG4BC20KDINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODEUltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC Short Circuit Rated UltraFast: Optimized forVCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15V Generation 4 IGBT design provides tighterVCE(on

PD -94115IRG4BC20MDShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHFast IGBTULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Rugged: 10sec short circuit capable at VGS=15VVCES = 600V Low VCE(on) for 4 to 10kHz applications IGBT Co-packaged with ultra-soft-recovery antiparallel diode VCE(on) typ. = 1.85VG Industry s

PD- 93974IRG4CC20RBIRG4CC20RB IGBT Die in Wafer FormC600 VSize 2Standard-Speed,GShort Circuit Rated6" WaferEElectrical Characteristics ( Wafer Form )Parameter Description Guaranteed (Min/Max) Test ConditionsVCE (on) Collector-to-Emitter Saturation Voltage 1.4V Max. IC = 3.25A, TJ = 25C, VGE = 15VV(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25C, I

PD - 9.790IRGBC20UD2INSULATED GATE BIPOLAR TRANSISTOR UltraFast CoPack IGBTWITH ULTRAFAST SOFT RECOVERY DIODEFeaturesCVCES = 600V Switching-loss rating includes all "tail" losses HEXFREDTM soft ultrafast diodes Optimized for high operating frequency (over 5kHz)VCE(sat) 3.0V See Fig. 1 for Current vs. Frequency curveG@VGE = 15V, IC = 6.5AEn-channelDes

D I I TI T D T I T I T Features CFeaturesFeaturesFeaturesFeatures Fast: Optimized for medium operatingVCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighterVCE(on) typ. = 1.66VG parameter distribution and higher efficiency than Generation 3@VG

PD - 97562IRG7IC28UPbFPDP TRENCH IGBTKey ParametersFeaturesVCE min600 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 40A1.70 Vl Optimized for Sustain and Energy Recoverycircuits in PDP applicationsIRP max @ TC= 25C 225 Al Low VCE(on) and Energy per Pulse (EPULSETM)TJ max150 Cfor improved panel efficiencyl High repetitive peak current capabilityl

PD - 95543IRFBC20S/LPbF Lead-Free7/21/04Document Number: 91007 www.vishay.com1IRFBC20S/LPbFDocument Number: 91007 www.vishay.com2IRFBC20S/LPbFDocument Number: 91007 www.vishay.com3IRFBC20S/LPbFDocument Number: 91007 www.vishay.com4IRFBC20S/LPbFDocument Number: 91007 www.vishay.com5IRFBC20S/LPbFDocument Number: 91007 www.vishay.com6IRFBC20S/LPbF

PD -91794IRG4BC20SD-S Standard Speed IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Extremely low voltage drop 1.4Vtyp. @ 10AVCES = 600V S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4VCE(on) typ. = 1.4V KHz in brushless DC drives.G Very T

PD - 94985IRFBC20PbF Lead-Free2/5/04Document Number: 91006 www.vishay.com1IRFBC20PbFDocument Number: 91006 www.vishay.com2IRFBC20PbFDocument Number: 91006 www.vishay.com3IRFBC20PbFDocument Number: 91006 www.vishay.com4IRFBC20PbFDocument Number: 91006 www.vishay.com5IRFBC20PbFDocument Number: 91006 www.vishay.com6IRFBC20PbFTO-220AB Package Out

PD - 9.1127IRGBC20MINSULATED GATE BIPOLAR TRANSISTOR Short Circuit RatedFast IGBTFeaturesC Short circuit rated - 10s @ 125C, V = 15VGEVCES = 600V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve VCE(sat) 2.5VG@VGE = 15V, IC = 8.0AEn-channelDescription

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC237; BC237BNPN general purpose transistors1997 Sep 04Product specificationSupersedes data of 1997 Mar 06File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN general purpose transistors BC237; BC237BFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (m

DISCRETE SEMICONDUCTORSDATA SHEETPHC20306Complementary enhancementmode MOS transistorObjective specification 1998 Feb 18File under Discrete Semiconductors, SC13bPhilips Semiconductors Objective specificationComplementary enhancementPHC20306mode MOS transistorFEATURES PINNING - SOT96-1 (SO8) Very low on-state resistancePIN SYMBOL DESCRIPTION High-speed switchin

DISCRETE SEMICONDUCTORSDATA SHEETPHC21025Complementary enhancementmode MOS transistors1997 Jun 20Product specificationSupersedes data of November 1994File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationComplementary enhancementPHC21025mode MOS transistorsFEATURES PINNING - SOT96-1 (SO8) High-speed switchingPIN SYMBOL DESCRIPTION

DISCRETE SEMICONDUCTORSDATA SHEETPHC2300Complementary enhancementmode MOS transistors1997 Oct 24Product specificationSupersedes data of 1997 Jun 19File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationComplementary enhancement modePHC2300MOS transistorsFEATURES PINNING - SOT96-1 (SO8) High-speed switchingPIN SYMBOL DESCRIPTION

DISCRETE SEMICONDUCTORSDATA SHEETPHC20512Complementary enhancementmodeMOS transistors1997 Oct 22Product specificationSupersedes data of 1997 Jun 19File under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationComplementary enhancement modePHC20512MOS transistorsFEATURES PINNING - SOT96-1 (SO8) High-speed switchingPIN SYMBOL DESCRIPTION

STC20DE90HPHybrid emitter switched bipolar transistorESBT 900 V - 20 A - 0.06 WPreliminary DataGeneral featuresTable 1. General featuresVCS(ON) IC RCS(ON)1.2 V 20 A 0.06 Low equivalent on resistance Very fast-switch, up to 150 kHz Squared RBSOA, up to 900 VTO247-4L HP Very low CISS driven by RG = 47 In compliance with the 2002/93/EC European

2STC2510High power NPN epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = 100 V Complementary to 2STA2510 Typical ft = 20 MHz Fully characterized at 125 oC32Application1TO-3P Audio power amplifierDescriptionFigure 1. Internal schematic diagramThe device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for

STAC2942BRF power transistorHF/VHF/UHF N-channel MOSFETsFeatures Gold metallization Excellent thermal stability Common source push-pull configuration POUT = 350 W min. with 21 dB gain @ 175 MHz In compliance with the 2002/95/EC European directiveSTAC244BDescriptionAir cavityThe STAC2942B is a gold metallized N-channel MOS field-effect RF power trans

STS3C2F100N-channel 100V - 0.110 - 3A SO-8Complementary pair STripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTS3C2F100(N-channel) 100V

STAC2932BRF power transistorsHF/VHF/UHF N-channel MOSFETsFeatures Gold metallization Excellent thermal stability Common source push-pull configuration POUT = 300 W min. with 20 dB gain @ 175 MHz In compliance with the 2002/95/EC European directive ST air cavity packaging technology - STACTM packageSTAC244BAir cavityDescriptionThe STAC2932B is a g

2SC2883 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2883 Audio Frequency Amplifier Applications Unit: mm Suitable for output stage of 3 watts amplifier Small flat package P = 1.0 to 2.0 W (mounted on ceramic substrate) C Complementary to 2SA1203 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO

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HN1C26FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C26FS Frequency General-Purpose Amplifier Applications Unit: mm Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. 1.00.05 High voltage : VCEO = 50 V 0.80.05 0.10.050.10.05 High current : IC = 100 mA (max) High hFE : hFE = 120 to 400 1 6 Excellent

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2SC2996 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2996 FM/AM RF, MIX, Local, IF Unit: mm High Frequency Amplifier Applications High stability oscillation voltage on FM local oscillator Recommend FM/AM RF, MIX, local and IF Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 40 VCollector-emitter

2SC2670 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2670 High Frequency Amplifier Applications Unit: mm AM High Frequency Amplifier Applications AM Frequency Converter Applications Low noise figure: NF = 3.5dB (max) (f = 1 MHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter v

2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Industrial Applications Power Amplifier Applications Unit: mmPower Switching Applications Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation: PC = 900 mW High-speed switching: tstg = 1.0 s (typ.) Complementary to 2SA1020. Absolute Maximum

2SC2716 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2716 High Frequency Amplifier Applications Unit: mm AM High Frequency Amplifier Applications AM Frequency Converter Applications Low noise figure: NF = 3.5dB (max) (f = 1 MHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter v

2SC2879 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) Unit in mm Specified 12.5V, 28MHz Characteristics Output Power : Po = 100W PEP Power Gain : Gp = 13dB Collector Efficiency : C = 35% (Min.) Intermodulation Distortion: IMD = -24dB(Max.) (MIL Standard) MAXIMUM RATINGS

2SC2878 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC2878 For Muting and Switching Applications Unit: mm High emitter-base voltage: VEBO = 25 V (min) High reverse h : Reverse h = 150 (typ.) (V = -2 V, I = -4 mA) FE FE CE C Low on resistance: R = 1 (typ.) (I = 5 mA) ON BMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-b

2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2884 Audio Frequency Amplifier Applications Unit: mm High DC current gain: hFE = 100 to 320 Suitable for output stage of 1 watts amplifier Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1204 Maximum Ratings (Ta = 25C) Characteristics Symbol

2SC2498 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2498 VHF~UHF Band Low Noise Amplifier Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 20 VEmitter-base voltage VEBO 3 VCollector current IC 50 mABase current IB 25 mACollector power dissipation PC 300

2SC2873 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2873 Power Amplifier Applications Unit: mmPower Switching Applications Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching time: tstg = 1.0 s (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SA1213 Absolute

2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2715 High Frequency Amplifier Applications Unit: mm High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz) Recommended for FM IF, OSC stage and AM CONV. IF stage. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter voltage VCE

2SC2644 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2644 VHF~UHF Band Wideband Amplifier Applications Unit: mm High gain Low IMD fT = 4 GHz (typ.) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 25 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3.0 VCollector current IC 120 mA

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2SC2714 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2714 High Frequency Amplifier Applications Unit: mmFM, RF, MIX, IF Amplifier Applications Small reverse transfer capacitance: Cre = 0.7 pF (typ.) Low noise figure: NF = 2.5dB (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 40 VCo

2SC2880 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC2880 High Voltage Switching Applications Unit: mm High voltage: VCEO = 150 V High transition frequency: f = 120 MHz T Small flat package P = 1.0 to 2.0 W (mounted on ceramic substrate) C Complementary to 2SA1200 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit

2SC2982 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2982 Storobo Flash Applications Unit: mm Medium Power Amplifier Applications High DC current gain and excellent linearity : h = 140 to 600 (V = 1 V, I = 0.5 A) FE (1) CE C: h = 70 (min), 140 (typ.), (V = 1 V, I = 2 A) FE (2) CE C Low saturation voltage : V = 0.5 V (max) (I = 2 A, I = 50 mA)

2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) Unit in mm Specified 28V, 28MHz Characteristics Output Power : Po = 150W (Min.) PEP Power Gain : Gp = 12.2dB (Min.) Collector Efficiency : C = 35% (Min.) Intermodulation Distortion: IMD = -30dB (Max.) MAXIMUM RATINGS (T

2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Industrial Applications Power Amplifier Applications Unit: mmPower Switching Applications Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation: PC = 900 mW High-speed switching: tstg = 1.0 s (typ.) Complementary to 2SA1020. Absolute Maximum

2SC2347 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2347 TV UHF Oscillator Applications Unit: mm TV VHF Mixer Applications Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 15 VEmitter-base voltage VEBO 3 VCollector current IC 50 mAEmitter current IE -50 mACollector power

2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2120 Audio Power Amplifier Applications Unit: mm High hFE: h = 100~320 FE (1) 1 watts amplifier applications. Complementary to 2SA950 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter voltage VCEO 30 VEmitter-base vo

2SC2669 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2669 High Frequency Amplifier Applications Unit: mm High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) Recommended for FM IF, OSC stage and AM CONV, IF stage. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter voltage VC

2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) Unit in mm Specified 12.5V, 28MHz Characteristics Output Power : Po = 60W (Min.) PEP Power Gain : Gp = 11.8dB (Min.) Collector Efficiency : C = 35% (Min.) Intermodulation Distortion: IMD = -30dB (Max.) MAXIMUM RATINGS (

2SC2714 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2714 High Frequency Amplifier Applications Unit: mm FM, RF, MIX,IF Amplifier Applications Small reverse transfer capacitance: Cre = 0.7 pF (typ.) Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage

2SC2551 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2551 Industrial Applications Hight Voltage Control Applications Unit: mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage: VCBO = 300 V, V = 300 V CEO Low saturation voltage: V = 0.5 V (max) CE (sat) Small collector output capacita

2SC2882 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2882 Power Amplifier Applications Unit: mm Voltage Amplifier Applications Suitable for driver of 30 to 35 watts audio amplifier Small flat package P = 1.0 to 2.0 W (mounted on ceramic substrate) C Complementary to 2SA1202 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit

HN2C26FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN2C26FS Frequency General-Purpose Amplifier Applications Unit: mm Two devices are incorporated into a fine-pitch, Small-Mold (6-pin) 1.00.05package 0.80.05 0.10.050.10.05 High voltage : VCEO = 50 V High current : IC = 100 mA (max) High hFE : hFE = 120 to 400 1 6 Excellent hFE

2SC2705 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2705 Audio Frequency Amplifier Applications Unit: mm Small collector output capacitance: C = 1.8 pF (typ.) ob High transition frequency: fT = 200 MHz (typ.) Complementary to 2SA1145. Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 150 VCollector-em

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2SC2458(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2458(L) Audio Amplifier Applications Unit: mmLow Noise Audio Amplifier Applications High current capability: IC = 150 mA (max) High DC current gain: h = 70~700 FE Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C Low noise: NF (2) = 0.2dB (typ.), 3dB (max)

2SC2712 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2712 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = 50 V, IC = 150 mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) High hFE: hFE = 70~700 Low noise: NF = 1dB (typ.), 10dB (max) Complementary to

2SC2216,2SC2717 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2216,2SC2717 TV Final Picture IF Amplifier Applications Unit: mm High gain: Gpe = 33dB (typ.) (f = 45 MHz) Good linearity of h . FEMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating Unit2SC2216 50Collector-base voltage VCBO V 2SC2717 30 2SC2216 45Collector-emitter VCEO

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2SC2458(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2458(L) Audio Amplifier Applications Unit: mm Low Noise Audio Amplifier Applications High current capability: IC = 150 mA (max) High DC current gain: h = 70~700 FE Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C Low noise: NF (2) = 0.2dB (typ.), 3dB (max)

2SC2881 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2881 Voltage Amplifier Applications Unit: mmPower Amplifier Applications High voltage: VCEO = 120 V High transition frequency: fT = 120 MHz (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1201 Absolute Maximum Ratings (Ta = 25C) Cha

2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm Output Power : Po = 80W (Min.) (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Base Voltage VCBO 36 VCollector-Emitter Voltage VCEO 16 VEmitter-Base Voltage VEBO 4 VCollector Current IC 20 A

2SC2713 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2713 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage: V = 120 V CEO Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C High h h = 200 to 700 FE: FE Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SA1163 Small pack

2SC2349 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2349 TV VHF Oscillator Applications Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 15 VEmitter-base voltage VEBO 3 VCollector current IC 50 mAEmitter current IE -50 mACollector power dissipation PC 250 mWJunct

2SC2712Bipolar Transistors Silicon NPN Epitaxial Type2SC27121. Applications Low-Frequency Amplifiers Audio Frequency General Purpose Amplifier Applications AM Amplifiers2. Features(1) AEC-Q101 qualified (Please see the orderable part number list)(2) High voltage: VCEO = 50 V(3) High collector current: IC = 150 mA (max)(4) High hFE: hFE = 70 to 700(5) Excellent h

2SC2713 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2713 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage: VCEO = 120 V Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C High h h = 200~700 FE: FE Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SA1163 Small package

2SC2240 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2240 Low Noise Audio Amplifier Applications Unit: mm The 2SC2240 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of low signal source impedance, and to lower the pulse noise. This is recommended for the first stages of Equalizer amplif

2SC2459 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2459 Audio Amplifier Applications Unit: mm High breakdown voltage: VCEO = 120 V (max) High DC current gain: h = 200~700 FE Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SA1049. Small package

2SC2532 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2532 Audio Frequency Amplifier Applications Unit: mm Driver Stage for LED Lamp Applications Temperature Compensation Applications High hFE: hFE (1) = 5000 (min) (IC = 10 mA) h (2) = 10000 (min) (IC = 100 mA) FEMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base

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2SC2710 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2710 For Audio Amplifier Applications Unit: mm High DC current gain: hFE (1) = 100~320 Complementary to 2SA1150 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter voltage VCEO 30 VEmitter-base voltage VEBO 5 VCollector cur

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2SC2753 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2753 VHF~UHF Band Low Noise Amplifier Application Unit: mm Low noise figure, high gain NF = 1.5dB, |S |2 = 16dB (f = 500 MHz) 21e NF = 1.7dB, |S |2 = 10.5dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 17 VCollector-emitter v

2SC2873 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SC2873 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High speed switching time: t = 1.0 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1213 Maxim

2SC2859 TOSHIBA Transistor Silicon NPN Epitaxial (PCT process) 2SC2859 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) Complementary to 2SA1182. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-

2SC2995 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2995 FM/AM RF, MIX, OSC, IF Unit: mm High Frequency Amplifier Applications High stability oscillation voltage on FM local oscillator. Recommend FM/AM RF, MIX, OSC and IF. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 40 VCollector-emitter vo

2SC2383 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2383 Color TV Vertical Deflection Output Applications Unit: mmColor TV Class-B Sound Output Applications High breakdown voltage: VCEO = 160 V Large continuous collector current capability Recommended for vertical deflection output & sound output applications for line-operated TVs. Complem

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2SC2712 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2712 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: V = 50 V, I = 150 mA (max) CEO C Excellent h linearity : h (I = 0.1 mA)/ h (I = 2 mA) FE FE C FE C = 0.95 (typ.) High h h = 70 to 700 FE: FE Low noise: NF = 1dB (typ.), 10dB (max) C

2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2983 Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications High transition frequency: fT = 100 MHz (typ.) Complementary to 2SA1225 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 160 VCollector-emitter voltage VCEO 160 VEmitter-ba

2SC2668 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2668 High Frequency Amplifier Applications Unit: mm FM, RF, IF Amplifier Applications Small reverse transfer capacitance: Cre = 0.70 pF (typ.) Low noise figure: NF = 2.5dB (typ.) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 40 VColle

Ordering number:EN733DNPN Epitaxial Planar Silicon Transistor2SC2839HF Amplifier ApplicationsFeatures Package Dimensions Very small package enabiling compactness andunit:mmslimness of sets.2033 High fT and small cre (fT=320MHz typ, cre=0.95pF[2SC2839]typ).B : BaseC : CollectorE : EmitterSANYO : SPASpecificationsAbsolute Maximum Ratings at Ta = 25CPara

Ordering number : ENN71982SA1179N / 2SC2812NPNP / NPN Epitaxial Planar Silicon Transistors2SA1179N / 2SC2812NLow-Frequency General-PurposeAmp ApplicationsFeaturesPackage Dimensions Miniature package facilitates miniaturization in endunit : mmproducts.2204 High breakdown voltage.[2SA1179N / 2SC2812N]0.42 0.13130 0.11 20.95 0.951.91 : Base2.922

VEC2415Ordering number : ENA1713SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceVEC2415ApplicationsFeatures Low ON-resistance. Composite type facilitating high-density mounting. 4V drive. Mounting high 0.75mm.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Sourc

Ordering number:EN753CNPN Triple Diffused Planar Silicon Transistor2SC2857High-Voltage Driver ApplicationsApplications Package Dimensions Color TV vertical driver, sound driver applications. unit:mm2003AFeatures [2SC2857] High breakdown voltage (VCEO 180V) High collector dissipation (PC=500mW)JEDEC : TO-92 B : BaseEIAJ : SC-43 C : CollectorE : EmitterSANYO

Ordering number:ENN779DPNP/NPN Epitaxial Planar Silicon Transistors2SA1209/2SC2911160V/140mA High-Voltage Switchingand AF 100W Predriver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage.2009B Good linearity of hFE and small Cob.[2SA1209/2SC2911] Fast switching speed.8.02.74.03.01.60.80.80.60.5

Ordering number : EN7198A2SA1179N / 2SC2812NSANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon TransistorsLow-Frequency General-Purpose2SA1179N / 2SC2812NAmp ApplicationsFeatures Miniature package facilitates miniaturization in end products. High breakdown voltage.Specifications ( ) : 2SA1179NAbsolute Maximum Ratings at Ta=25CParameter Symbol Cond

Ordering number:ENN778FPNP/NPN Epitaxial Planar Silicon Transistors2SA1207/2SC2909High-Voltage SwitchingAF 60W Predriver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage.2003B Excellent linearity of hFE and small Cob.[2SA1207/2SC2909] Fast switching speed.5.04.04.00.450.50.440.451 2 31 : Emitter

Ordering number:EN462ENPN Epitaxial Planar Silicon Transistor2SC207827MHz RF Power Amplifier ApplicationsPackage Dimensionsunit:mm2010C[2SC2078]1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 80 VCollector-to-Emitter Voltage VCE

Ordering number:ENN781GPNP/NPN Epitaxial Planar Silicon Transistors2SA1208/2SC2910High-Voltage SwitchingAudio 80W Output Predriver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage.2006B Excellent linearity of hFE and small Cob.[2SA1208/2SC2910] Fast swtching speed.6.05.0 4.70.50.60.5 0.51 2 31 : Emi

Ordering number : ENN7021FC21TR : NPN Epitaxial Planar Silicon TransistorFET : N-Channel Silicon Junction FETFC21High-Frequency Amplifier,AM tuner RF Amplifier ApplicationsFeatures Package Dimensions The FC21 contains both a 2SK1740 equivalent chip unit : mmand a 2SC2812 equivalent chip in the CP package, 2122thus realizes higher efficiency in device mounting[FC21]on

Ordering number:EN693FNPN Epitaxial Planar Silicon Transistor2SC2814High-FriquencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions Very small package enabiling compactness andunit:mmslimness of sets.2018A High fT and small cre (fT=320MHz typ, cre=0.95pF[2SC2814]typ).C : CollectorB : BaseE : EmitterSANYO : CPSpecificationsAbsolute Maximu

Ordering number:ENN572EPNP/NPN Epitaxial Planar Silicon Transistors2SA1016, 1016K/2SC2362, 2362KHigh-Voltage Low-Noise Amp ApplicationsPackage Dimensionsunit:mm2003B[2SA1016, 1016K/2SC2362, 2362K]5.04.04.00.450.50.440.451 2 31 : Emitter( ) : 2SA1016, 1016K 2 : Collecor3 : BaseSpecifications 1.3 1.3SANYO : NPAbsolute Maximum Ratings at Ta = 25C2SA101

Ordering number:EN931DNPN Epitaxial Planar Silicon Transistor2SC2999HF Amplifier ApplicationsFeatures Package Dimensions FBET series.unit:mm Very small-sized package permitting sets to be small-2033sized and slim.[2SC2999] High fT (fT=750MHz typ.) and small Cre(Cre=0.6pF typ).B : BaseC : CollectorE : EmitterSANYO : SPASpecificationsAbsolute Maximum R

Ordering number:ENN544GPNP/NPN Epitaxial Planar Silicon Transistors2SA1011/2SC2344High-Voltage Switching, AF Power Amp,100W Output Predriver ApplicationsPackage Dimensionsunit:mm2010C[2SA1011/2SC2344]10.24.53.65.11.31.20.80.41 2 31 : Base( ) : 2SA10112 : Collector3 : Emitter2.55 2.55SpecificationsSANYO : TO220ABAbsolute Maximum Ratings at Ta = 2

Ordering number:EN829HPNP/NPN Epitaxial Planar Silicon Transistors2SA1481/2SC2960High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm High breakdown voltage.2033[2SA1481/2SC2960]B : BaseC : Collector( ) : 2SA1481E : EmitterSpecificationsSANYO : SPAAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Rating

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Datasheet R07DS0273EJ03002SC2618 (Previous: REJ03G0702-0200)Rev.3.00Silicon NPN Epitaxial Mar 28, 2011Application Low frequency amplifier Complementary pair with 2SA1121 Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)1. Emitter32. Base3. Collector12Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitCollec

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

July. 2014FPF1C2P5BF07AF1 Module solution for PV-ApplicationGeneral DescriptionFairchild's brand-new DC-DC module is designed for a power stage that needs more compact design. And the Press-fit techn- ology provides simple and reliable mounting. This module is op- timized for the application such as solar inverter where a high efficiency and robust design are needed.Electrical

KSC2331Low Frequency Amplifier & Medium Speed Switching Complement to KSA931 High Collector-Base Voltage : VCBO=80V Collector Current : IC=700mA Collector Dissipation : PC=1WTO-92L11. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage

KSC2755RF AMP, FOR VHF &TV TUNER Low NF, High GPE3 Forward AGC Capability to 30 dB NF=2.0dB (TYP.), GPE=23dB (TYP.) at f=200MHz21 SOT-231. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 30 VVEBO Emit

KSC2682Audio Frequency Power Amplifier Complement to KSA1142TO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 VVEBO Emitter-Base Voltage 5 VIC Collector Current 100 mAPC Collector Dissipation (Ta=

January 2007FDMC2674tmN-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mFeatures General Description Max rDS(on) = 366m at VGS = 10V, ID = 1.0AUltraFET device combines characteristics that enablebenchmark efficiency in power conversion applications. Typ Qg = 12.7nC at VGS = 10VOptimized for rDS(on), low ESR, low total and Miller gate charge, Low Miller chargethese de

KSC2233B/W TV Horizontal Deflection Output Collector-Base Voltage : VCBO = 200V Collector Current (DC) : IC = 4A Collector Dissipation : PC = 40WTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 60

KSC2316Audio Power Amplifier Applications Driver Stage Amplifier Complement to KSA916TO-92L11. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 120 VVCEO Collector-Emitter Voltage 120 VVEBO Emitter-Base Voltage 5 VIC Collector Current 800

KSC2330AColor TV Chroma Output Collector-Base Voltage : VCBO=400V Current Gain Bandwidth Product : fT=50MHz (TYP.)TO-92L11. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 400 VVCEO Collector-Emitter Voltage 400 VVEBO Emitter-Base Voltage 7

July. 2014FPF1C2P5MF07AMF1 Module solution for PV-ApplicationGeneral DescriptionFairchild's brand-new DC-AC module is designed for a power stage that needs more compact design. And the Press-fit techn- ology provides simple and reliable mounting. This module is op- timized for the application such as solar inverter where a high efficiency and robust design are needed.Electrica

October 2010FDMC2514SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 40 A, 3.5 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 3.5 m at VGS = 10 V, ID = 22.5 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 4.7 m

KSC2710Low Frequency Power Amplifier Complement to KSA1150 Collector Dissipation : PC=300mWTO-92S11.Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 20 VVEBO Emitter-Base Voltage 5 VIC Collector Current 5

KSC2335High Speed, High Voltage Switching Industrial UseTO-2201NPN Epitaxial Silicon Transistor1.Base 2.Collector 3.EmitterAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 500 V V CEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 7 A ICP *Collector Current (Puls

July 2005KSC2982NPN Epitaxial Silicon TransistorStrobe Flash & Medium Power Amplifier Excellent hFE Linearity : hFE1=140 ~ 600 Low Collector-Emitter Saturation Voltage : VCE(sat)=0.5V Collector Dissipation : PC=1~2W in Mounted on Ceramic BoardMarking2 9 8 2P Y W WSOT-891Weekly code1. Base 2. Collector 3. EmitterYear codehFE grageAbsolute Maximum Ratings

KSC2330Color TV Chroma Output Collector-Base Voltage : VCBO=300V Current Gain Bandwidth Product : fT=50MHz (TYP.)TO-92L11. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 300 VVCEO Collector-Emitter Voltage 300 VVEBO Emitter-Base Voltage 7

November 2006KSC2883tmNPN Epitaxial Silicon TransistorLow Frequency Power Amplifier 3W Output Application Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Complement to KSA1203Marking2 8 8 3P Y W WSOT-891Weekly code1. Base 2. Collector 3. EmitterYear codehFE grageAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Va

July 2010FDMC2512SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 40 A, 2.0 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 2.0 m at VGS = 10 V, ID = 27 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 2.95 m a

BC213LPNP General Purpose Amplifier This device is deisgned for use as general purpose amplifiers and switches requiring collector currents to 300mA. Sourced from process 68. See PN200 for Characteristics.TO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings* TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -30 VV

KSC2334High Speed Switching Industrial Use Complement to KSA1010TO-2201NPN Epitaxial Silicon Transistor1.Base 2.Collector 3.EmitterAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 7 AICP *Collector Current

KSC2785Audio Frequency Amplifier & High Frequency OSC. Complement to KSA1175 Collector-Base Voltage : VCBO=60VTO-92S11.Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 VVEBO Emitter-Base Voltage 5 VIC

KSC2690/2690AAudio FrequencyHigh Frequency Power Amplifier Complement to KSA1220/KSA1220ATO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage: KSC2690 120 V: KSC2690A 160 V VCEO Collector- Emitter Voltage: KSC2690 120 V: KSC2690A 160 V

KSC2859Low Frequency Power Amplifier Complement to KSA1182321 SOT-231. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 35 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Collector Current 500 mAPC Collector Power Dissipat

BC212LB CETO-92 PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300mA.Sourced from Process 68. Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value Units50 VVCEO Collector-Emitter Voltage60 VVCBO Collector-Base Voltage5 VVEBO Emitter-Base VoltageCollector Curr

KSC2001General Purpose Applications High hFE and Low VCE (sat)TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 5 VIC Collector Current 700 mAIB Base Current 150 mAPC Co

KSC2787FM/AM RF AMP, MIX, CONV, OSC, IF Collector-Emitter Voltage : VCEO=30V High Current Gain Bandwidth Product : fT=300MHz (TYP) Low Output Capacitance : Cob=2.0pF (TYP)TO-92S11.Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 VVCEO Co

KSC2688Color TV Chroma Output & Video OutputTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 VVEBO Emitter-Base Voltage 5 VIC Collector Current 200 mAPC Collector Dissipation (Ta=25C) 1.25 WPC Col

January 2007FDMC2523PtmP-Channel QFET -150V, -3A, 1.5Features General Description Max rDS(on) = 1.5 at VGS = -10V, ID = -1.5AThese P-Channel MOSFET enhancement mode power field effect transistors are produced using Fairchild's proprietary, Low Crss ( typical 10pF)planar stripe, DMOS technology. This advanced technology has Fast Switchingbeen especially tailored t

BC212BPNP General Purpose Amplifier This device is designed for general purpose amplifier application at collector currents to 100mA. Sourced from process 68.TO-9211. Collector 2. Base 3. EmitterAbsolute Maximum Ratings* TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 50 VVCBO Collector-Base Voltage 60 VVEBO Emitter-Base Vo

BC237/238/239Switching and Amplifier Applications Low Noise: BC239TO-921NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. EmitterAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCES Collector-Emitter Voltage : BC237 50 V : BC238/239 30 VVCEO Collector-Emitter Voltage : BC237 45 V : BC238/239 25 VVEBO Emitter-Base Voltage : B

July 2005KSC2881NPN Epitaxial Silicon TransistorPower Amplifier Collector-Emitter Voltage : VCEO=120V Current Gain Bandwidth Productor : fT=120MHz Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Complement to KSA1201Marking2 8 8 1P Y W WSOT-891Weekly code1. Base 2. Collector 3. EmitterYear codehFE grageAbsolute Maximum Ratings Ta = 25C

KSC2333High Speed Switching Application Low Collector Saturation Voltage Specified of Reverse Biased SOA With Inductive LoadTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base

January 2007FDMC2610tmN-Channel UltraFET Trench MOSFET 200V, 9.5A, 200mFeatures General Description Max rDS(on) = 200m at VGS = 10V, ID = 2.2AThis N-Channel MOSFET is a rugged gate version of Fairchild Semiconductors advanced Power Trench Max rDS(on) = 215m at VGS = 6V, ID = 1.5Aprocess. It has been optimized for power management Low Profile - 1mm max in a Pow

KSC2784Audio Frequency Low Noise Amplifier Complement to KSA1174TO-92S11.Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 120 VVCEO Collector-Emitter Voltage 120 VVEBO Emitter-Base Voltage 5 VIC Collector Current 50 mAIB Base Current 10 mAPC

KSC2786TV PIF Amplifier, FM Tuner RF Amplifier, Mixer, Oscillator High Current Gain Bandwidth Product : fT=600MHz (TYP) High Power Gain : GPE=22dB at f=100MHzTO-92S11.Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter

February 2002 FDC2612 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 1.1 A, 200 V. RDS(ON) = 725 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional High performance trench technology for extremely switching PWM controllers

KSC2223High Frequency Amplifier Very small size to assure good space factor in Hybrid IC applications3 fT=600MHz (TYP) at IC=1mA Cob=1pF (TYP) at VCB=6V NF=3dB (TYP) at f=100MHz21 SOT-231. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Volta

BC214LPNP General Purpose Amplifier This device is deisgned for use as general purpose amplifiers and switches requiring collector currents to 300mA. Sourced from process 68.TO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -30 VVCBO Collector-Base Voltage -45 VVE

KSC2310High Voltage Power Amplifier Collector-Base Voltage : VCBO=200V Current Gain Bandwidth Product : fT=100MHzTO-92L11. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 200 VVCEO Collector-Emitter Voltage 150 VVEBO Emitter-Base Voltage 5

BC214LBPNP General Purpose Amplifier This device is deisgned for use as general purpose amplifiers and switches requiring collector currents to 300mA. Sourced from process 68.TO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -30 VVCBO Collector-Base Voltage -45 VV

October 2009 FDC2512 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 1.4 A, 150 V. RDS(ON) = 425 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 475 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized

July 2005FJC2383NPN Epitaxial Silicon Transistor Color TV Audio Output & Color TV Vertical Deflection OutputMarking2 3 8 3P Y W WSOT-891Weekly code1. Base 2. Collector 3. EmitterYear codehFE grageAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Ratings UnitsVCBO Collector-Base Voltage 160 VVCEO Collector-Emitter Voltage 160 VVEBO Emitt

BC214PNP General Purpose Amplifier This device is deisgned for use as general purpose amplifiers and switches requiring collector currents to 300mA. Sourced from process 68.TO-9211. Collector 2. Base 3. EmitterAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -30 VVCBO Collector-Base Voltage -45 VVEB

KSC2757Mixer Oscillator for VHF Tuner High Current Gain Bandwidth Product : fT=1100MHz (TYP)321 SOT-231. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 15 VVEBO Emitter-Base Voltage 5 VIC Collector Current 5

KSC2383Color TV Audio Output & Color TV Vertical Deflection OutputTO-92L11. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 160 VVCEO Collector-Emitter Voltage 160 VVEBO Emitter-Base Voltage 6 VIC Collector Current 1 AIB Base Current 0.5 APC

KSC2073TV Vertical Deflection Output Complement to KSA940 Collector-Base Voltage : VCBO = 150VTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Curre

KSC2715FM RADIO AMP, MIX, CONV, OSC, IF AMP321 SOT-231. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 35 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 4 VIC Collector Current 50 mAPC Collector Power Dissipation 150 mWTJ Juncti

KSC2500Medium Power Amplifier & Low SaturationTO-92L11. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 30 VVCES Collector-Emitter Voltage 30 VVCEO Collector-Emitter Voltage 10 VVEBO Emitter-Base Voltage 6 VIC Collector Current (DC) 2 AICP * Co

KSC2258/2258AHigh Voltage General Amplifier TV Video Output Amplifier High BVCEOTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : KSC2258 250 V : KSC2258A 300 VVCEO Collector-Emitter Voltage : KSC2258 250 V : KSC2258A 300 VVEBO

KSC2752High SpeedHigh Voltage Swiching Industrial UseTO-1261NPN Epitaxial Silicon Transistor1. Emitter 2.Collector 3.BaseAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 0.5 A ICP *Collector Current (Pulse) 1

BC212LBPNP General Purpose Amplifier This device is designed for general purpose amplifier application at collector currents to 100mA. Sourced from process 68.TO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings* TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 50 VVCBO Collector-Base Voltage 60 VVEBO Emitter-Base V

BC214LCPNP General Purpose Amplifier This device is deisgned for use as general purpose amplifiers and switches requiring collector currents to 300mA. Sourced from process 68.TO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -30 VVCBO Collector-Base Voltage -45 VV

October 2006FDFC2P100Integrated P-Channel PowerTrench MOSFET and Schottky Diode-20V, -3A, 150mFeatures General Description Max rDS(on) = 150m at VGS = -4.5V, ID = -3.0AThe FDFC2P100 combine the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low Max rDS(on) = 200m at VGS = -2.5V, ID = -2.2Aforward voltage drop Schottky barrier recti

October 2009 FDC2512 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 1.4 A, 150 V. RDS(ON) = 425 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 475 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized

KSC2328AAudio Power Amplifier Applications Complement to KSA928A Collector Power Dissipation : PC=1W 3 Watt Output ApplicationTO-92L11. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter

DATA SHEETSILICON POWER TRANSISTOR2SC2334NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC2334 is a mold power transistor developed for high-speed ORDERING INFORMATION switching, and is ideal for use as a driver in devices such as switching Part No. Package regulators, DC/DC converters, and high-frequency power amplifiers. 2SC2334 TO-220ABFEATURES Low c

DATA SHEETSILICON POWER TRANSISTOR2SC2335NPN SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-SPEED HIGH-VOLTAGE SWITCHINGThe 2SC2335 is a mold power transistor developed for high-speed ORDERING INFORMATIONhigh-voltage switching, and is ideal for use as a driver in devices suchPart No. Packageas switching regulators, DC/DC converters, and high-frequency power2SC2335 TO-220ABamplif

NEC's NPN SILICON HIGH NE021FREQUENCY TRANSISTOR SERIESFEATURES HIGH INSERTION GAIN: 18.5 dB at 500 MHz LOW NOISE FIGURE: 1.5 dB at 500 MHz HIGH POWER GAIN: 12 dB at 2 GHz LARGE DYNAMIC RANGE: 19 dBm at 1 dB,2 GHz Gain CompressionDESCRIPTION00 (CHIP) 07/07BNEC's NE021 series of NPN silicon transistors provides eco-nomical solutions to wide ranges of amplifier a

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC2954NPN SILICON EPITAXIAL TRANSISTORPOWER MINI MOLDDESCRIPTIONThe 2SC2954 is an NPN epitaxial silicon transistor disigned forPACKAGE DIMENSIONSlow noise wide band amplifier and buffer amplifier of OSC, for VHF(Unit: mm)and CATV bnad.4.50.1FEATURES1.50.11.60.2 Low Noise and High Gain.f = 200 MHz, 500 MHzNF: 2.3

DATA SHEETSILICON TRANSISTORS2SC2148, 2SC2149MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORDESCRIPTIONThe 2SC2148, 2SC2149 are economical microwave transistorsPACKAGE DIMENSIONS (Unit : mm)encapsulated into new hermetic stripline packages, "micro X".These are designed for small signal amplifier, low noise amplifier,1and oscillator applications in the L to

DATA SHEETNPN SILICON TRANSISTOR2SC2570AHIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORDESCRIPTIONThe 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages.FEATURES Low noise and high gain : NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5.0 mA Wide dynamic range : NF = 1.9 dB, Ga = 9 dB @f = 1 GHz, VCE = 10 V, IC = 1

DATA SHEETSILICON TRANSISTORS2SC2958, 2959NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERSFEATURES PACKAGE DRAWING (UNIT: mm) Ideal for use of high voltage current such as TV verticaldeflection (drive and output), audio output, pin cushioncorrection Complementary transistor with 2SA1221 and 2SA1222VCEO = 140 V: 2SA1221/2SC2958VCEO = 160 V: 2SA1222/2

DATA SHEETSILICON TRANSISTORS2SC2885, 2946, 2946(1)NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-VOLTAGE HIGH-SPEED SWITCHINGThe 2SC2885, 2946, and 2946(1) are high-voltage high-speed switching power transistors featuring a smallpackage (MP-3) which is suitable for high-density mounting. These transistors are ideal for drivers in DC/DCconverters and switching regulators.There are thr

DATA SHEETSILICON TRANSISTOR2SC2721NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-FREQUENCY AMPLIFIERS AND MID-SPEED SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) Complementary transistor with 2SA1154 High PT in small dimension and high voltagePT = 1 W, VCEO = 60 VABSOLUTE MAXIMUM RATINGS (Ta = 25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 60

DATA SHEETSILICON POWER TRANSISTOR2SC2517NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SC2517 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching. This transistor is ideal for use in drivers such asswitching regulators, DC/DC converters, high-frequency poweramplifiers.FEATURES ow collector saturation voltage:

DATA SHEETSILICON POWER TRANSISTOR2SC2654NPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) Large current capacitance in small dimension: IC(DC) = 7 A Low collector saturation voltage:VCE(sat) = 0.3 V MAX. (IC = 3.0 A) Ideal for use in a lamp driver Complementary transistor: 2SA1129ABSOL

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DATA SHEETSILICON TRANSISTOR2SC2351HIGH FREQUENCY LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORMINI MOLDFEATURES NF 1.5 dB TYP. @ f = 1.0 GHzPACKAGE DIMENSIONS(Units: mm) MAG 14 dB TYP. @ f = 1.0 GHz2.80.2+0.11.50.65-0.15ABSOLUTE MAXIMUM RATINGS (TA = 25 C)Collector to Base Voltage VCBO 25 V2Collector to Emitter Voltage VCEO 12 VEmitter to B

NPN SILICON GENERAL NE734PURPOSE TRANSISTOR SERIESFEATURES LOW NOISE FIGURE:

PHC2300Complementary enhancement mode MOS transistorsRev. 05 24 February 2011 Product data sheet1. Product profile1.1 General descriptionOne N-channel and one P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features and ben

BUK6C2R1-55CN-channel TrenchMOS intermediate level FETRev. 3 18 January 2012 Product data sheet1. Product profile1.1 General descriptionIntermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high-performance au

KSC2331 NPN EPITAXIAL SILICON TRANSISTORLOW FREQUENCY AMPLIFIERTO-92LMEDIUM SPEED SWITCHING Complement to KSA931 High Collector-Base Voltage VCBO=80V Collector Current IC=700mA Collector Dissipation PC=1WABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 80 VCollector-Emitter Voltage VCEO 60 VEmitter-Base Voltage VE

KSC2233 NPN EPITAXIAL SILICON TRANSISTORB/W TV HORIZONTAL DEFLECTION OUTPUTTO-220 Collector-Base Voltage : VCBO = 200V Collector Current (D.C) : IC = 4A Collector Dissipation : PC = 40WABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating UnitV Collector-Base Voltage VCBO 200V Collector-Emitter Voltage VCEO 60V Emitter-Base Voltage VEBO 5A Collector Current

KSC2316 NPN EPITAXIAL SILICON TRANSISTORAUDIO POWER AMPLIFIER APPLICATIONS Driver Stage Amplifier TO-92L Complement to KSA916ABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 120 VCollector-Emitter Voltage VCEO 120 VEmitter-Base Voltage VEBO 5 VCollector Current IC 800 mACollector Dissipation PC 900 mWJunction Temperature

KSC2330A NPN EPITAXIAL SILICON TRANSISTORCOLOR TV CHROMA OUTPUTTO-92L Collector-Base Voltage VCBO=400V Current Gain-Bandwidth Product fT=50Mhz (TYP)ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 400 VCollector-Emitter Voltage VCEO 400 VEmitter-Base Voltage VEBO 7 VCollector Current IC 100 mACollector Dissipation PC 1

KSC2330 NPN EPITAXIAL SILICON TRANSISTORCOLOR TV CHROMA OUTPUTTO-92L Collector-Base Voltage VCBO=300V Current Gain-Bandwidth Product fT=50Mhz (TYP)ABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 300 VCollector-Emitter Voltage VCEO 300 VEmitter-Base Voltage VEBO 7 VCollector Current IC 100 mACollector Dissipation PC 1 mW

BC237/238/239 NPN EPITAXIAL SILICON TRANSISTORSWITCHING AND AMPLIFIER APPLICATIONS LOW NOISE: BC239 TO-92ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Emitter Voltage VCES V:BC237 50 VBC238/239 30Collector-Emitter Voltage VCEO:BC237 45 VBC238/239 25 VEmitter-Base Voltage VEBO:BC237 6 VBC238/239 5 VCollector Current (DC) IC 100 mA

KSC2785 NPN EPITAXIAL SILICON TRANSISTORAUDIO FREQUENCY AMPLIFIERTO-92SHIGH FREQUENCY OSC. Complement to KSA1175 Collector-Base Voltage VCBO=60VABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 60 VCollector-Emitter Voltage VCEO 50 VEmitter-Base Voltage VEBO 5 VCollector Current IC 150 mACollector Dissipation PC 250 mW

KSC2786 NPN EPITAXIAL SILICON TRANSISTORTV PIF AMPLIFIER, FM TUNER RF AMPLIFIER,TO-92SMIXER, OSCILLATOR High Current-Gain-Bandwidth Product fT=600MHz (Typ) High Power Gain GPE=22dB at f=100MHzABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 30 VCollector-Emitter Voltage VCEO 20 VEmitter-Base Voltage VEBO 4 VCollector Curr

KSC2310 NPN EPITAXIAL SILICON TRANSISTORHIGH VOLTAGE POWER AMPLIFIER Collector - Base Voltage VCBO=200V TO-92L Current Gain-Bandwidth Product fT=100MHzABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 200VCollector-Emitter Voltage VCEO 150VEmitter-Base Voltage VEBO 5mACollector Current IC 50mWCollector Dissipation

KSC2383 NPN EPITAXIAL SILICON TRANSISTORCOLOR TV AUDIO OUTPUTTO-92LCOLOR TV VERTICAL DEFLECTION OUTPUTABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 160 VCollector-Emitter Voltage VCEO 160 VEmitter-Base Voltage VEBO 6 VCollector Current IC 1 ABase Current IB 0.5 ACollector Dissipation PC 900 WJunction Temperature TJ 150St

KSC2073 NPN EPITAXIAL SILICON TRANSISTORTV VERTICAL DEFLECTION OUTPUTTO-220 Complement to KSA940 Collector-Base Voltage VCBO = 150VABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 150 V Collector-Emitter Voltage VCEO 150 V Emitter-Base Voltage VEBO 5 V Collector Current IC 1.5 A Collector Dissipation ( TC=25 ) PC 25 W Junction T

KSC2500 NPN EPITAXIAL SILICON TRANSISTORMEDIUM POWER AMPLIFIERTO-92LLOW SATURATIONABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 30 VCollector-Emitter Voltage VCES 30 VCollector-Emitter Voltage VCBO 10 VEmitter-Base Voltage VEBO 6 VCollector Current (DC) IC 2 ACollector Current (Pulse) IC 5 ABase Current AIB 0.5Collecto

KSC2328A NPN EPITAXIAL SILICON TRANSISTORAUDIO POWER AMPLIFIER APPLICATIONS Complement to kSA928A TO-92L Collector Dissipation PC=1W 3 Watt Output ApplicationABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 30 VCollector-Emitter Voltage VCEO 30 VEmitter-Base Voltage VEBO 5 VCollector Current IC 2 ACollector Dissipation

High-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K Features Dimensions (Unit : mm) 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2SC56591.22) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2(2)(3)(1)(1) Base0.15Max.ROHM : VMT3(2) EmitterAbsolute maximum ratings (Ta=25C) (3) Collector

2SC2411KDatasheetMedium Power Transistor (32V, 500mA)lOutlinelParameter Value SMT3VCEO32VIC500mA2SC2411KSOT-346 lFeaturesl1) High ICMAX lInner circuitl ICMAX=0.5A2)Low VCE(sat) Optimal for low voltage operation.3)Complements the 2SA1036K.lApplicationlDRIVING CIRCUIT, LOW FREQ

TransistorsPower management(dual digital transistors)UMC2N / FMC2AFFeatures FExternal dimensions (Units: mm)1) Includes a DTA124E and aDTC124E transistor in a singleUMT and a SMT package.2) Ideal for power switch circuits.3) Mounting cost and area can be cutin half.FStructureA PNP and a NPN digital transistor(each with two built in resistors)The following characteris

2SC4102 / 2SC3906K / 2SC2389S Transistors High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K / 2SC2389S External dimensions (Unit : mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2SC41022) Complements the 2SA1579 / 2SA1514K / 2SA1038S. 1.25 Absolute maximum ratings (Ta=25C) 2.1Parameter Symbol Limits UnitCollector-base voltage VCBO 120 VC

General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 Features Dimensions (Unit : mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC40812. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029. 1.251.62.12.8Structure Epitaxial planar type 0.1Min.0.3Min.NPN silicon transistor Each lead has same dimensions Each lead

2SC5659 / 2SC4618 / 2SC4098 /Transistors 2SC2413 / 2SC2058SHigh-frequency Amplifier Transistor(25V, 50mA, 300MHz)2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K /2SC2058S Features External dimensions (Units : mm)1) Low collector capacitance. (Cob : Typ. 1.3pF)2SC56591.22) Low rbb, high gain, and excellent noise characteristics.0.2 0.8 0.2(2)(3)(1)(1) Base Absolute maximum

General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Features Dimensions (Unit : mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC4081 2SC46172. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. (1)(2)(3)1.251.6 0.82.12.81.6Structure Epitaxial planar type 0.1Min. 0.1Min.0.3Min.NPN

2SC2411KFRA2SC2411K TransistorsAEC-Q101 QualifiedMedium Power Transistor (32V, 0.5A) 2SC2411K 2SC2411KFRA Features External dimensions (Units : mm) 1) High ICMax.2SC2411KFRA2SC2411KICMax. = 0.5A2) Low VCE(sat).2.90.2Optimal for low voltage operation. 1.1+0.21.90.2 -0.10.80.10.95 0.952SA1036KFRA3) Complements the 2SA1036K. (1) (2)0 0.1(3)

2SC5658 / 2SC4617EB / 2SC46172SC4081UB / 2SC4081U3 / 2SC2412KDatasheetGeneral purpose small signal amplifier(50V, 150mA)lOutlinelParameter Value SC-105AA SOT-416FLVCEO50VIC150mA 2SC5658 2SC4617EB(VMT3) (EMT3F)lFeatures SOT-416 SOT-323FLl1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/2SC4617 2SC4081UB 2SA1774EB/2SA

2SC5658 / 2SC4617EB / 2SC46172SC4081UB / 2SC4081 / 2SC2412KDatasheetGeneral purpose small signal amplifier(50V, 150mA)lOutlinelParameter Value SC-105AA SOT-416FLVCEO50VIC150mA 2SC5658 2SC4617EB(VMT3) (EMT3F)lFeatures SOT-416 SOT-323FLl1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/2SC4617 2SC4081UB 2SA1774EB/2SA17

2SC2412K FRADatasheetGeneral purpose small signal amplifier(50V, 150mA)AEC-Q101 QualifiedlOutlinel SOT-346 Parameter Value SC-59 VCEO50VIC150mASMT3lFeatures lInner circuitl l1)Low Cob.Cob=2.0pF(Typ.)2)Complements the 2SA1037AK FRA.lApplicationlGENERAL PURPOSE SMALL SIGNAL AMPLIFIER

IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 600 Surface Mount (IRFBC20S, SiHFBC20S)RDS(on) ()VGS = 10 V 4.4 Low-Profile Through-Hole (IRFBC20L, SiHFBC20L) Available in Tape and Reel (IRFBC20, SiiHFBC20S)Qg (Max.) (nC) 18 Dynamic dV/dt RatingQgs

IRFRC20, IRFUC20, SiHFRC20, SiHFUC20www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 4.4 Surface Mount (IRFRC20, SiHFRC20)Qg (Max.) (nC) 18 Straight Lead (IRFUC20, SiHFUC20)Qgs (nC) 3.0 Available in Tape and ReelQgd (nC) 8.9 Fast SwitchingConfigu

IRFBC20, SiHFBC20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 4.4RoHS* Fast SwitchingQg (Max.) (nC) 18COMPLIANT Ease of ParallelingQgs (nC) 3.0Qgd (nC) 8.9 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

IRFDC20, SiHFDC20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 4.4RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 18 End StackableQgs (nC) 3.0 Fast SwitchingQgd (nC) 8.9 Ease of ParallelingConfiguration Single Simple Drive Requirement

IRFIBC20G, SiHFIBC20GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 4.4f = 60 Hz)RoHS*Qg (Max.) (nC) 18COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 3.0 Dynamic dV/dt RatingQgd (nC) 8.9 Low Thermal ResistanceConfiguration

IRFIBC20G, SiHFIBC20GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 600Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 4.4f = 60 Hz)RoHS*Qg (Max.) (nC) 18COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 3.0 Dynamic dV/dt RatingQgd (nC) 8.9 Low Thermal ResistanceConfiguration

VS-FC220SA20www.vishay.comVishay SemiconductorsSOT-227 Power Module Single Switch - Power MOSFET, 220 AFEATURES Enhanced body diode dV/dt and dIF/dt capability Improved gate avalanche and dynamic dV/dt ruggedness Fully characterized capacitance and avalanche SOA Fully isolated package Easy to use and parallel Low on-resistance Simple drive requirem

IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 600 Surface Mount (IRFBC20S, SiHFBC20S)RDS(on) ()VGS = 10 V 4.4 Low-Profile Through-Hole (IRFBC20L, SiHFBC20L) Available in Tape and Reel (IRFBC20, SiiHFBC20S)Qg (Max.) (nC) 18 Dynamic dV/dt RatingQgs

IRFBC20, SiHFBC20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 4.4RoHS* Fast SwitchingQg (Max.) (nC) 18COMPLIANT Ease of ParallelingQgs (nC) 3.0Qgd (nC) 8.9 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

IRFRC20, IRFUC20, SiHFRC20, SiHFUC20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 4.4 Repetitive Avalanche RatedQg (Max.) (nC) 18 Surface Mount (IRFRC20, SiHFRC20)Qgs (nC) 3.0 Straight Lead (IRFUC20, SiHFUC20)Qgd (nC) 8.9 Available in T

IRFDC20, SiHFDC20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 4.4RoHS* For Automatic InsertionCOMPLIANTQg (Max.) (nC) 18 End StackableQgs (nC) 3.0 Fast SwitchingQgd (nC) 8.9 Ease of ParallelingConfiguration Single Simple Drive Requirement

IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20LVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Surface Mount (IRFBC20S/SiHFBC20S)VDS (V) 600 Low-Profile Through-Hole (IRFBC20L/SiHFBC20L)AvailableRDS(on) ()VGS = 10 V 4.4 Available in Tape and Reel (IRFBC20S/SiHFBC20S)RoHS* Dynamic dV/dt RatingCOMPLIANTQg (Max.) (nC) 18 150 C Operating TemperatureQg

DMC2038LVTCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID Device V(BR)DSS RDS(ON) Low Input Capacitance TA = 25C Fast Switching Speed 35m @ VGS = 4.5V 4.5A Q1 20V Low Input/Output Leakage 56m @ VGS = 1.8V 3.5A Fast Switching Speed 74m @ VGS = -4.5V 3.1A Q2 -20V Totally Lead-Free & Fully RoHS

DMC2400UVCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance Low Gate Threshold Voltage VGS(th)

DMC2004DWKCOMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT-363 Low Gate Threshold Voltage VGS(th)

DMC2053UVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Device BVDSS RDS(ON) Low Input Capacitance TA = +25C Fast Switching Speed 35m @ VGS = 4.5V 4.6A Low Input/Output Leakage N-Channel 20V 43m @ VGS = 2.5V 4.2A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 74m @ VGS = -4

2DC2412R NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Lead Free By Design/RoHS Compliant (Note 1) Green Device (Note 2) Mechanical Data SOT-23 Case: SOT-23 C Case Material: Molded Plastic, "Green Molding Compound. UL Flammability Classification Ratin

DMC2450UV COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance Device V(BR)DSS RDS(ON) max TA = +25C Low Gate Threshold Voltage VGS(th)

ZXTC2061E6 12V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26 Features Mechanical Data NPN + PNP Combination Case: SOT26 BVCEO > 12 (-12)V Case Material: Molded Plastic, Green Molding Compound; BVEBO > 7 (-7)V UL Flammability Classification Rating 94V-0 Continuous Collector Current IC = 5 (-3.5)A Moisture Sensitivity: Level 1 per J-STD-020 VCE

A Product Line of Diodes Incorporated ZXTC2063E6 40V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26 Features Mechanical Data NPN + PNP Combination Case: SOT26 BVCEO > 40 (-40)V Case Material: Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 BVECO > 6 (-3)V Moisture Sensitivity: Level 1 per J-STD-020 ICM

A Product Line ofDiodes Incorporated DMC2020USD20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Reduced footprint with two discretes in a single SO8 ID Max Low gate drive Device V(BR)DSS RDS(on) max TA = 25C Low input capacitance (Notes 3 & 5) Fast Switching Speed Low Input/Output Leakage 20m @ VGS = 4.5V 8.

DMC2041UFDB COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX Device V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C Low Profile, 0.6mm Max Height Q1 40m @ VGS = 4.5V 4.7A 20V ESD protected Gate N-Channel 3.7A 65m @ VGS = 2.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 90m

DMC25D1UVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Device V(BR)DSS RDS(ON) TA = +25 Low Input Capacitance C Fast Switching Speed Q1 25V 4 @ VGS = 4.5V 0.5A Low Input/Output Leakage 55m @ VGS= -4.5V -3.9A Q2 -12V ESD Protected Gate 70m @ VGS= -2.5V -3.5A Totally Lead-Free & F

A Product Line ofDiodes IncorporatedDMC2700UDM20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max Low Gate Threshold Voltage VGS(th)

A Product Line ofDiodes IncorporatedZXTC2062E6 20V COMPLEMENTARY MEDIUM POWER TRANSISTORS IN SOT26 Features Mechanical Data NPN + PNP Combination Case: SOT26 BVCEO > 20 (-20)V Case Material: Molded Plastic, Green Molding Compound BVEBO > 7 (-7)V UL Flammability Classification Rating 94V-0 Continuous Collector Current IC = 4 (-3.5)A Moisture

A Product Line ofDiodes IncorporatedZXTC2045E6 30V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26 Features Mechanical Data NPN + PNP Combination Case: SOT26 BVCEO > 30 (-30)V Case Material: Molded Plastic, Green Molding Compound; BVCEV > 40 (-40)V UL Flammability Classification Rating 94V-0 ICM = 5 (-5)A Peak Pulse Current Moisture Sensitivity:

DMC25D0UVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance Device V(BR)DSS RDS(ON) TA = +25C Low Input Capacitance Q1 25V 4 @ VGS = 4.5V 0.4 A Fast Switching Speed 80m @ VGS= -12V -3.2 A Low Input/Output Leakage Q2 -30V ESD Protected Gate on N-Channel (>6kV Human Body Model) 125m @ VGS= -

DMC2004LPKCOMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: DFN1612-6 Low Gate Threshold Voltage VGS(th)

DMC2990UDJCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-ResistanceDevice V(BR)DSS RDS(ON) max Very low Gate Threshold Voltage, 1.0V max TA = 25C Low Input Capacitance 0.99 @ VGS = 4.5V 450mA Fast Switching Speed Ultra-Small Surface Mount Package 1mm x 1mm 1.2 @ VGS = 2.5V 400mA Q1 20V Low P

DMC2004VKCOMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT-563 Low Gate Threshold Voltage VGS(th)

SIGC25T120CL IGBT Chip in NPT-technology FEATURES: This chip is used for: 1200V NPT technology 180m chip C power module low turn-off losses BSM15GD120DLC E3224 short tail current positive temperature coefficient Applications: easy paralleling G drives E Chip Type VCE ICn Die Size Package Ordering Code Q67041-SIGC25T120CL 1200V 15A 5

Technical InformationModSTACK6MS1200R17KE3-3F-B16B9C23VTIOVorlufige Datenpreliminary dataKey data3x 663A rms at 690V rms, forced air (fan included)General informationStacks for various inverter application. Semiconductors, heat sinks, capacitors, drivers andsensors included. These are only technical data!Please read carefully the complete documentation and maintain the

/ Technical InformationIGBT-2A400HB12C2FIGBT-ModuleV = 1200VCESI = 400A / I = 800AC nom CRM Typical Applications Motor drives Electrical Features Low switching losses T = 150C T = 150Cvj op vj op Mechanical Features Copper base plateModule

PD - 94909AIRG4BC20UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST UltraFast CoPack IGBTSOFT RECOVERY DIODEFeaturesC UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200VCES = 600V kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.85V parameter distribution and higher efficiency thanG Generati

IGC27T120T8QHigh Speed IGBT in Trench and Fieldstop TechnologyFeatures: Recommended for: 1200V Trench + Field stop technology discrete componentsC low switching losses positive temperature coefficientApplications: easy paralleling high frequency drivesG UPSE Welding Solar invertersChip Type VCE ICn1) Die Size PackageIGC27T120T8Q 1200V

IRL60SC216MOSFETD-PAK 7pinIR MOSFET - StrongIRFETFeaturestab Very low RDS(on) Optimized for logic level drive High current carrying capability 175C operating temperature7 Optimized for broadest availability from distribution partners 654321Benefits Reduced conduction losses Increased power density Increased reliability vers

SIGC25T60NC IGBT Chip in NPT-technology CFEATURES: 600V NPT technology This chip is used for: 100m chip IGBT Modules positive temperature coefficient easy paralleling Applications: GE drives Chip Type VCE ICn Die Size Package Ordering Code Q67050-A4143-SIGC25T60NC 600V 30A 4.5 x 5.71 mm2 sawn on foil A001 MECHANICAL PARAMETER: mm2 Raste

SIGC25T120CS IGBT Chip in NPT-technology FEATURES: This chip is used for: 1200V NPT technology C 180m chip low turn-off losses short tail current Applications: positive temperature coefficient G drives, SMPS, resonant easy paralleling E applications Chip Type VCE ICn Die Size Package Ordering Code SIGC25T120CS 1200V 15A 5.71 x 4.

SIGC25T120CS2 IGBT Chip in NPT-technology FEATURES: This chip is used for: C 1200V NPT technology 175m chip low turn-off losses IGBT Modules short tail current positive temperature coefficient Applications: easy paralleling G drives, SMPS, resonant E applications Chip Type VCE ICn Die Size Package Ordering Code SIGC25T120CS2 1200V 15A 5

TypeBSC22DN20NS3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 200 V Optimized for dc-dc conversionRDS(on),max 225m N-channel, normal levelID 7 A Excellent gate charge x R product (FOM)DS(on) Low on-resistance RDS(on)PG-TDSON-8 150 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for

SIGC28T60E IGBT3 Chip Features: This chip is used for: 600V Trench & Field Stop technology power moduleC low VCE(sat) discrete components low turn-off losses Applications: short tail current drives positive temperature coefficient G easy parallelingE Chip Type VCE IC Die Size PackageSIGC28T60E 600V 50A 6.57 x 4.2 mm2 sawn on foil

/ Technical InformationIGBT-2A200HB12C2FIGBT-ModuleV = 1200VCESI = 200A / I = 400AC nom CRM Typical Applications Motor drives Electrical Features Low switching losses T = 150C T = 150Cvj op vj op Mechanical Features Copper base plateModule

IGC28T65T8MIGBT3 Chip Medium PowerFeatures: Recommended for: 650V Trench & Field Stop technology power modulesC high short circuit capability, self limitingshort circuit current positive temperature coefficient Applications: easy paralleling drivesG Qualified according to JEDEC for targetEapplicationsChip Type VCE ICn Die Size PackageIGC28T65T8

SIGC20T120LE IGBT3 Chip Features: This chip is used for: 1200V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy parallelingG E Chip Type VCE IC Die Size PackageSIGC20T120LE 1200V 15A 4.41 x 4.47 mm2 sawn on foil Mechanical Parameters Raster siz

SIGC25T60SNC IGBT Chip in NPT-technology CFEATURES: This chip is used for: 600V NPT technology 100m chip SGP30N60 short circuit prove positive temperature coefficient Applications: G easy paralleling E drives Chip Type VCE ICn Die Size Package Ordering Code Q67041-A4667-SIGC25T60SNC 600V 30A 4.5 x 5.71 mm2 sawn on foil A001 Q67041-A4

IGC27T120T8LIGBT4 Low Power ChipFeatures: Recommended for: 1200V Trench & Field stop technology low / medium power modules C low switching losses positive temperature coefficientApplications: easy paralleling low / medium power drives Qualified according to JEDEC for targetGapplications EChip Type VCE ICn1 ) Die Size PackageIGC27T120T8L 1200V 25A

SIGC25T60UN High Speed IGBT Chip in NPT-technology CFEATURES: This chip is used for: low Eoff SGP30N60HS 600V NPT technology 100m chip Applications: G short circuit prove E Welding positive temperature coefficient PFC easy paralleling UPS Chip Type VCE ICn Die Size Package Ordering Code Q67041-A4667-SIGC25T60UN 600V 3

/ Technical InformationIGBT-2A300HB12C2FIGBT-ModuleV = 1200VCESI = 300A / I = 600AC nom CRM Typical Applications Motor drives Electrical Features Low switching losses T = 150C T = 150Cvj op vj op Mechanical Features Copper base plateModule

PD-95640IRG4BC20WINSULATED GATE BIPOLAR TRANSISTORFeaturesC Designed expressly for Switch-Mode Power Supply and PFC (power factor correction)VCES = 600V applications Industry-benchmark switching losses improveVCE(on) typ. = 2.16V efficiency of all power supply topologiesG 50% reduction of Eoff parameter Low IGBT conduction losses@VGE = 15V, IC = 6.5AE

SIGC25T120CIGBT Chip in NPT-technologyFeatures: This chip is used for: 1200V NPT technology power module CBUP 213 positive temperature coefficient easy parallelingApplications: drivesGEChip Type VCE IC Die Size PackageSIGC25T120C 1200V 15A 4.53 x 5.71 mm2 sawn on foilMechanical ParameterRaster size 4.53 x 5.71Emitter pad size 2 x ( 2.18 x 1.6 )mm2

SIGC223T120R2CS IGBT Chip in NPT-technology FEATURES: This chip is used for: C 1200V NPT technology 175m chip low turn-off losses IGBT Modules short tail current positive temperature coefficient Applications: easy paralleling G drives, SMPS, resonant E integrated gate resistor applications Chip Type VCE ICn Die Size Package Ordering

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IKD15N60RC2TRENCHSTOPTM RC-Series for hard switching applicationsCost effective monolithically integrated IGBT with DiodeCFeatures:TRENCHSTOPTM Reverse Conducting (RC) technology for 600Vapplications offering Very tight parameter distribution Operating range up to 20kHzG Maximum junction temperature 175CE Short circuit capability of 3s Humidity robus

IAUC28N08S5L230OptiMOS-5 Power-TransistorProduct SummaryVDS 80 VFeaturesRDS(on) 23mW OptiMOS - power MOSFET for automotive applicationsID 28 A N-channel - Enhancement mode - Logic Level MSL1 up to 260C peak reflowPG-TDSON-8 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested1Quality Features Infineon Au

SIGC20T120LE IGBT3 Power Chip Features: This chip is used for: 1200V Trench & Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC20T120LE 1200V 15A 4.41 x 4.47 mm2 sawn on foil Mechanical Parameters R

SPP07N60C2, SPB07N60C2Final dataSPA07N60C2Cool MOS Power TransistorFeatureProduct Summary New revolutionary high voltage technologyVDS @ Tjmax 650 V Ultra low gate chargeRDS(on) 0.6 Periodic avalanche ratedID 7.3 A Extreme dv/dt rated Ultra low effective capacitancesP-TO220-3-31 P-TO263-3-2 P-TO220-3-1321P-TO220-3-31Type Package Orderi

BSC200P03LS GOptiMOS-P Power-TransistorProduct SummaryFeaturesVDS -30 V P-ChannelRDS(on),max 20mW Enhancement modeID -12.5 A Logic level 150C operating temperature Avalanche ratedPG-TDSON-8 Vgs=25V, specially suited for notebook applications Halogen-free according to IEC61249-2-21 Pb-free Lead plating: RoHS compliantType Package Mark

BSC220N20NSFDMOSFETTSON-8-3OptiMOSTM3 Power-Transistor, 200 V8756 6Features 758 N-channel, normal levelPin 1 175 C rated2433 Excellent gate charge x R product (FOM)DS(on)4 21 Very low on-resistance RDS(on) Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Ideal for high-frequency switching and

SIGC20T120E IGBT3 Power Chip Features: This chip is used for: 1200V Trench + Field Stop technology power modules C low turn-off losses short tail current Applications: positive temperature coefficient drives easy paralleling G E Chip Type VCE IC Die Size Package SIGC20T120E 1200V 15A 4.41 x 4.47 mm2 sawn on foil Mechanical Parameters Ras

IRFBC20, SiHFBC20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 4.4RoHS* Fast SwitchingQg (Max.) (nC) 18COMPLIANT Ease of ParallelingQgs (nC) 3.0Qgd (nC) 8.9 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

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& " & $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures 1 D R ( 492??6= =@8:4 =6G6= m D n) m xR I46==6?E 82E6 492C86 I AC@5F4E ) ' D n) 4 DR /6CJ =@H @? C6D:DE2?46 D n) G D ON R U @A6C2E:?8 E6>A6C2EFC6R *3 7C66 =625 A=2E:?8 , @"- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ $ 7@C E2C86E 2AA=:42E:@?R #562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?49C@?@FD C64E:7:42E:@?

SIGC28T60SE IGBT3 Chip FEATURES: This chip is used for: 600V Trench & Field Stop technology power module C low VCE(sat) discrete components low turn-off losses short tail current Applications: positive temperature coefficient G drives easy paralleling E Chip Type VCE IC Die Size Package SIGC28T60SE 600V 50A 6.57 x 4.2 mm2 sawn

IRG4BC20KDPbFINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODEUltraFast IGBTFeaturesC GE =

IGC28T65QEHigh Speed IGBT3 ChipFeatures: Recommended for: 650V Trench & Field Stop technology discrete components andmodules high speed switching series thirdCgeneration low VCE(sat) Applications: low EMI uninterruptible power supplies low turn-off losses welding convertersG positive temperature coefficient converters with high switching

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IAUC24N10S5L300OptiMOSTM-5 Power-TransistorProduct SummaryVDS 100 VRDS(on) 30mWID 24 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic level AEC Q101 qualified MSL1 up to 260C peak reflow1 Green product (RoHS compliant)1 100% Avalanche tested Feasible for automatic optical inspe

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MOSFETMetal Oxide Semiconductor Field Effect TransistorBare DieOptiMOS3 Power MOS Transistor ChipIPC26N12NData SheetRev. 2.5FinalIndustrial & MultimarketOptiMOS3 Power MOS Transistor ChipIPC26N12NPower MOS Transistor Chip1 Description N-channel enhancement mode For dynamic characterization refer to the datasheet of IPP048N12N3 G AQL 0.65 for visual

SIGC28T65E IGBT3 Chip Features: Recommended for: 650V Trench & Field Stop technology power modules low VCE(sat) C low turn-off losses Applications: short tail current drives positive temperature coefficient easy parallelingGE Qualified according to JEDEC for target applications Chip Type VCE ICn1 ) Die Size PackageSIGC28T65E 650

IGC27T120T6L IGBT4 Low Power Chip FEATURES: 1200V Trench + Field Stop technology This chip is used for:C low switching losses low / medium power modules positive temperature coefficient easy paralleling Applications: G low / medium power drives E Chip Type VCE ICn Die Size Package IGC27T120T6L 1200V 25A 4.99 x 5.45 mm2 sawn on foil MECHANICAL

SIGC223T120R2CL IGBT Chip in NPT-technology CFEATURES: This chip is used for: 1200V NPT technology IGBT-Modules 180m chipBSM150GB120DLC short circuit prove positive temperature coefficient GApplications: easy parallelingE drivesChip Type VCE ICn Die Size Package Ordering CodeQ67050-A4286-SIGC223T120R2CL 1200V 150A 14.4 x 15.5 mm2

VCES = 600 VIXGH 40N60C2HiPerFASTTM IGBTIC25 = 75 AIXGT 40N60C2C2-Class High Speed IGBTsVCE(sat) = 2.7 Vtfi typ = 32 nsTO-268 (IXGT)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 M 600 V E C (TAB)VGES Continuous 20 VVGEM Transient 30 VTO-247 (IXGH)IC25 TC = 25C (limited by leads) 75 AIC110 TC = 1

Preliminary Technical InformationVCES = 600VHiPerFASTTM IGBT IXGK120N60C2Lightspeed 2TM Series IC110 = 120AIXGX120N60C2 VCE(sat) 2.5V tfi(typ) = 80nsTO-264(IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 VC (TAB)EVGEM Transient 30 VIC25 TC = 25

Advance Technical DataVCES = 600 VIXGH 60N60C2HiPerFASTTM IGBTIC25 = 75 AC2-Class High Speed IGBTs IXGT 60N60C2VCE(sat) = 2.5 Vtfi typ = 35 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by

HiPerFASTTM IGBTs VCES = 600VIXGN60N60C2with DiodeIC110 = 60AIXGN60N60C2D1VCE(sat) 2.5Vtrr = 35nsC2-Class High Speed IGBTsEE SOT-227B, miniBLOC E15343260C2 60C2D1E Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1 M 600 VE VGES Continuous 20 VCVGEM Transient 30 VIC25 TC

HiPerFASTTM IGBTIXGH40N60C2D1 VCES = 600VIXGT40N60C2D1 IC25 = 75Awith Diode IXGJ40N60C2D1 VCE(SAT) 2.7V tfi(typ) = 32nsC2-Class High Speed IGBTsTO-247(IXGH)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 V C (TAB)CEVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VTO-268 (D3) ( IXGT)VGEM Transient 30 V

VCES = 600 VIXGH 30N60C2HiPerFASTTM IGBTIC25 = 70 AIXGT 30N60C2VCE(sat) = 2.7 VC2-Class High Speed IGBTstfi typ = 32 nsTO-268 (IXGT)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGE C (TAB)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C (limited by leads) 70 ATO-247 (IXGH)IC110 TC =

IXKC 20N60CVDSS = 600 VCoolMOS 1) Power MOSFETID25 = 15 ARDS(on) max = 190 mElectrically isolated back surface2500 V electrical isolationN-Channel Enhancement ModeDISOPLUS220TMLow RDSon, high VDSS MOSFETUltra low gate chargeGGD Sisolated tabSE72873FeaturesMOSFET Silicon chip on Direct-Copper-Bond Symbol Conditions Maximum Ratingssubstrate

VCES = 600 VIXGH 30N60C2HiPerFASTTM IGBTIC25 = 70 AIXGT 30N60C2VCE(sat) = 2.7 VC2-Class High Speed IGBTstfi typ = 32 nsTO-268 (IXGT)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGE C (TAB)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C (limited by leads) 70 ATO-247 (IXGH)IC110 TC =

ADVANCED TECHNICAL INFORMATIONTrench Power MOSFET IXUC200N055 VDSS = 55 VISOPLUS220TM ID25 = 200 AElectrically Isolated Back Surface RDS(on)= 5.1 mWISOPLUS 220TMSymbol Test Conditions Maximum RatingsGDVDSS TJ = 25C to 150C55 VSVGS Continuous 20 VIsolated back surface*ID25 TC = 25C; Note 1 200 A G = Gate, D = Drain,S = SourceID90 TC = 90C, Note 1 160 A* Pa

HiPerFASTTM IGBTs VCES = 600VIXGA16N60C2C2-Class IC110 = 16AIXGP16N60C2High Speed VCE(sat) 3.0Vtfi(typ) = 33nsTO-263 AA (IXGA)GSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 150C 600 VC (Tab)VCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VTO-220AB (IXGP)VGEM Transient 30 VIC25 TC = 25C40 AIC110 TC = 110

HiPerFASTTM IGBTs VCES = 600VIXGA16N60C2D1C2-Class High Speed IC110 = 16AIXGP16N60C2D1w/ Diode VCE(sat) 3.0VIXGH16N60C2D1tfi(typ) = 33nsTO-263 AA (IXGA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGCC

HiPerFASTTM IGBTsVCES = 600VIXGT40N60C2D1IC110 = 40Aw/ DiodeIXGJ40N60C2D1 VCE(SAT) 2.7V IXGH40N60C2D1tfi(typ) = 32nsC2-Class High Speed IGBTsTO-268 (IXGT)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-268 (IXGJ)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 V

VCES = 600 VHiPerFASTTM IGBT IXGH 30N60C2D1IC25 = 70 AIXGT 30N60C2D1with DiodeVCE(sat) = 2.7 VC2-Class High Speed IGBTstfi typ = 32 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C (limited by leads) 70 AIC11

Advance Technical DataVCES = 600 VIXGH 60N60C2HiPerFASTTM IGBTIC25 = 75 AC2-Class High Speed IGBTs IXGT 60N60C2VCE(sat) = 2.5 Vtfi typ = 35 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by

HiPerFASTTM IGBTs VCES = 600VIXGA16N60C2D1C2-Class High Speed IC110 = 16AIXGP16N60C2D1w/ Diode VCE(sat) 3.0VIXGH16N60C2D1tfi(typ) = 33nsTO-263 AA (IXGA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGCC

IXGK50N60C2D1 VCES = 600 VHiPerFASTTMIXGX 50N60C2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.5 VC2-Class High Speed IGBTstfi(typ) = 48 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-264 AA(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCEVGES Continuous 20 VVGEM Transient 30 VPLUS247IC25 TC = 25

IXTC 26N50P VDSS = 500 VPolarHVTMID25 = 15 APower MOSFET RDS(on) 260 m ISOPLUS220TM(Electrically Isolated Tab)N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 500 V ISOPLUS220TM (IXTC)E153432VDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGS Continuous 30 VVGSM Transi

HiPerFASTTM IGBTsVCES = 600VIXGT40N60C2D1IC110 = 40Aw/ DiodeIXGJ40N60C2D1 VCE(SAT) 2.7V IXGH40N60C2D1tfi(typ) = 32nsC2-Class High Speed IGBTsTO-268 (IXGT)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-268 (IXGJ)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 V

IXFC 26N50P VDSS = 500 VPolarHVTM HiPerFETID25 = 15 APower MOSFET RDS(on) 260 m ISOPLUS 220TM(Electrically Isolated Tab)trr 250 nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsISOPLUS220TM (IXFC)E153432VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25

IXGK50N60C2D1 VCES = 600 VHiPerFASTTMIXGX 50N60C2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.5 VC2-Class High Speed IGBTstfi(typ) = 48 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-264 AA(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCEVGES Continuous 20 VVGEM Transient 30 VPLUS247IC25 TC = 25

IXGR 60N60C2VCES = 600 VHiPerFASTTM IGBTIXGR 60N60C2D1IC25 = 75 AISOPLUS247TMVCE(sat) = 2.7 VLightspeed 2TM Seriestfi(typ) = 35 ns(Electrically Isolated Back Surface)Preliminary Data SheetIXGR_C2 IXGR_C2D1Symbol Test Conditions Maximum RatingsISOPLUS247VCES TJ = 25C to 150C 600 V (IXGR)VCGR TJ = 25C to 150C; RGE = 1 M 600 VC(ISOLATED TAB)VGES Conti

ADVANCE TECHNICAL INFORMATIONVCES = 600 VHiPerFASTTM IGBT IXGK 120N60C2IC110 = 120 ALightspeed 2TM SeriesIXGX 120N60C2VCE(sat) = 2.5 Vtfi(typ) = 45 nsSymbol Test Conditions Maximum RatingsTO-264(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGVGEM Transient 30 VC (TAB)EIC25 TC = 25C (limited by leads)

HiPerFASTTM IGBTs VCES = 600VIXGA16N60C2C2-Class IC110 = 16AIXGP16N60C2High Speed VCE(sat) 3.0Vtfi(typ) = 33nsTO-263 AA (IXGA)GSymbol Test Conditions Maximum RatingsEVCES TJ = 25C to 150C 600 VC (Tab)VCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VTO-220AB (IXGP)VGEM Transient 30 VIC25 TC = 25C40 AIC110 TC = 110

IXGR 50N60C2VCES = 600 VHiPerFASTTMIXGR 50N60C2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.7 VC2-Class High Speed IGBTstfi(typ) = 48 nsPreliminary Data SheetSymbol Test Conditions Maximum RatingsISOPLUS247VCES TJ = 25C to 150C 600 V(IXGR)VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 V(ISOLATED TAB)VGEM Transient 30 VIC25 TC = 25C75 A

HiPerFASTTM IGBTs VCES = 600VIXGN60N60C2with DiodeIC110 = 60AIXGN60N60C2D1VCE(sat) 2.5Vtrr = 35nsC2-Class High Speed IGBTsEE SOT-227B, miniBLOC E15343260C2 60C2D1E Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1 M 600 VE VGES Continuous 20 VCVGEM Transient 30 VIC25 TC

IXGK50N60C2D1 VCES = 600 VHiPerFASTTMIXGX 50N60C2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.5 VC2-Class High Speed IGBTstfi(typ) = 48 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-264 AA(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCEVGES Continuous 20 VVGEM Transient 30 VPLUS247IC25 TC = 25

VCES = 600 VHiPerFASTTM IGBT IXGH 30N60C2D1IC25 = 70 AIXGT 30N60C2D1with DiodeVCE(sat) = 2.7 VC2-Class High Speed IGBTstfi typ = 32 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C (limited by leads) 70 AIC11

IXFC 20N80P VDSS = 800 VPolarHVTM HiPerFETIXFR 20N80P ID25 = 10 APower MOSFET RDS(on) 500 m Electrically Isolated Back Surfacetrr 250 nsN-Channel Enhancement ModeFast Recovery DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS220TM (IXFC)VDSS TJ = 25C to 150C 800 VE153432VDGR TJ = 25C to

VCES = 600 VHiPerFASTTM IGBT IXGH 30N60C2D1IC25 = 70 AIXGT 30N60C2D1with DiodeVCE(sat) = 2.7 VC2-Class High Speed IGBTstfi typ = 32 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C (limited by leads) 70 AIC11

HiPerFASTTM IGBTs VCES = 600VIXGA16N60C2D1C2-Class High Speed IC110 = 16AIXGP16N60C2D1w/ Diode VCE(sat) 3.0VIXGH16N60C2D1tfi(typ) = 33nsTO-263 AA (IXGA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGCC

IXGK 60N60C2D1VCES = 600 VHiPerFASTTMIXGX 60N60C2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.5 VC2-Class High Speed IGBTstfi(typ) = 35 nsSymbol Test Conditions Maximum Ratings TO-264 AA(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCVGES Continuous 20 VEVGEM Transient 30 VPLUS247IC25 TC = 25C (limited by leads)

Advance Technical DataVCES = 600 VIXGH 60N60C2HiPerFASTTM IGBTIC25 = 75 AC2-Class High Speed IGBTs IXGT 60N60C2VCE(sat) = 2.5 Vtfi typ = 35 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by

VCES = 600 VIXGH 30N60C2HiPerFASTTM IGBTIC25 = 70 AIXGT 30N60C2VCE(sat) = 2.7 VC2-Class High Speed IGBTstfi typ = 32 nsTO-268 (IXGT)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGE C (TAB)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C (limited by leads) 70 ATO-247 (IXGH)IC110 TC =

VCES = 600 VIXGH 40N60C2HiPerFASTTM IGBTIC25 = 75 AIXGT 40N60C2C2-Class High Speed IGBTsVCE(sat) = 2.7 Vtfi typ = 32 nsTO-268 (IXGT)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 M 600 V E C (TAB)VGES Continuous 20 VVGEM Transient 30 VTO-247 (IXGH)IC25 TC = 25C (limited by leads) 75 AIC110 TC = 1

HiPerFASTTM IGBTsVCES = 600VIXGT40N60C2D1IC110 = 40Aw/ DiodeIXGJ40N60C2D1 VCE(SAT) 2.7V IXGH40N60C2D1tfi(typ) = 32nsC2-Class High Speed IGBTsTO-268 (IXGT)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-268 (IXGJ)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 V

IXKC 23N60C5ID25 = 23 ACoolMOS 1) Power MOSFETVDSS = 600 VRDS(on) max = 0.1 Electrically isolated back surface2500 V electrical isolation N-Channel Enhancement ModeDISOPLUS220TMLow RDSon, high VDSS MOSFETUltra low gate chargeGGD Sisolated backS surfaceE72873Preliminary dataFeaturesMOSFET Silicon chip on Direct-Copper-Bond Symbol Conditions

IXGR 40N60C2 VCES = 600 VHiPerFASTTM IGBTIXGR 40N60C2D1 IC25 = 56 AISOPLUS247TMVCE(SAT) = 2.7 VC2-Class High Speed IGBTstfi(typ = 32 ns(Electrically Isolated Back Surface)Preliminary Data SheetISOPLUS 247TM(IXGR)IXGR_C2 IXGR_C2D1Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VCISOLATED TABEVCGR TJ = 25C to 150C; RGE = 1 M 600 VVG

VCES = 600 VIXGH 40N60C2HiPerFASTTM IGBTIC25 = 75 AIXGT 40N60C2C2-Class High Speed IGBTsVCE(sat) = 2.7 Vtfi typ = 32 nsTO-268 (IXGT)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 M 600 V E C (TAB)VGES Continuous 20 VVGEM Transient 30 VTO-247 (IXGH)IC25 TC = 25C (limited by leads) 75 AIC110 TC = 1

IXGR 40N60C2 VCES = 600 VHiPerFASTTM IGBTIXGR 40N60C2D1 IC25 = 56 AISOPLUS247TMVCE(SAT) = 2.7 VC2-Class High Speed IGBTstfi(typ = 32 ns(Electrically Isolated Back Surface)Preliminary Data SheetISOPLUS 247TM(IXGR)IXGR_C2 IXGR_C2D1Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VCISOLATED TABEVCGR TJ = 25C to 150C; RGE = 1 M 600 VVG

IXGC 16N60C2HiPerFASTTM IGBTVCES = 600 VIXGC 16N60C2D1C2-Class High SpeedIC25 = 20 AIGBT in ISOPLUS220TM CaseVCE(sat) = 3.0 VElectrically Isolated Back Surfacetfi(typ) = 35 nsPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings ISOPLUS 220TM (IXGC) E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 V

IXGC 16N60C2HiPerFASTTM IGBTVCES = 600 VIXGC 16N60C2D1C2-Class High SpeedIC25 = 20 AIGBT in ISOPLUS220TM CaseVCE(sat) = 3.0 VElectrically Isolated Back Surfacetfi(typ) = 35 nsPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings ISOPLUS 220TM (IXGC) E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 V

HiperFASTTM IGBT VCES = 600VIXGR60N60C2C1w/ SiC Anti-Parallel IC110 = 39ADiode VCE(sat) 2.7Vtfi(typ) = 54ns(Electrically Isolated Back Surface)ISOPLUS 247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 VCISOLATED TABEIC25 TC = 25

VCES = 600 VIXGP 30N60C2HiPerFASTTM IGBTIC25 = 70 AC2- Class High Speed IGBTsVCE(sat) = 2.7 Vtfi typ = 32 nsSymbol Test Conditions Maximum Ratings TO-220 (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VC (TAB)VGEM Transient 30 V GCEIC25 TC = 25C (limited by leads) 70 AIC110 TC = 110C30 AG = Gate, C =

Advance Technical DataVCES = 600 VIXGH 50N60C2HiPerFASTTM IGBTIC25 = 75 AC2-Class High Speed IGBTs IXGT 50N60C2VCE(sat) = 2.7 Vtfi typ = 48 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by

Preliminary Technical InformationIXTC280N055T VDSS = 55 VTrenchMVTMID25 = 145 APower MOSFET RDS(on) 3.6 m (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS220 (IXTC)E153432VDSS TJ = 25C to 175C55 VVDGR TJ = 25C to 175C; RGS = 1 M 55 VVGSM Transient

Preliminary Technical InformationVCES = 600VHiPerFASTTM IGBT IXGK120N60C2Lightspeed 2TM Series IC110 = 120AIXGX120N60C2 VCE(sat) 2.5V tfi(typ) = 80nsTO-264(IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 VC (TAB)EVGEM Transient 30 VIC25 TC = 25

IXGR 60N60C2VCES = 600 VHiPerFASTTM IGBTIXGR 60N60C2D1IC25 = 75 AISOPLUS247TMVCE(sat) = 2.7 VLightspeed 2TM Seriestfi(typ) = 35 ns(Electrically Isolated Back Surface)Preliminary Data SheetIXGR_C2 IXGR_C2D1Symbol Test Conditions Maximum RatingsISOPLUS247VCES TJ = 25C to 150C 600 V (IXGR)VCGR TJ = 25C to 150C; RGE = 1 M 600 VC(ISOLATED TAB)VGES Conti

Preliminary Technical InformationVCES = 600VHiPerFASTTM IGBT IXGR120N60C2IC110 = 60AISOPLUS247TMVCE(sat) 2.7VLightspeed 2TM Seriestfi(typ) = 80ns(Electrically Isolated Back Surface)ISOPLUS247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VG (ISOLATED TAB)

Preliminary Technical InformationIXTC220N055T VDSS = 55 VTrenchMVTMID25 = 130 APower MOSFET RDS(on) 4.4 m (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS220 (IXTC)E153432VDSS TJ = 25C to 175C55 VVDGR TJ = 25C to 175C; RGS = 1 M 55 VVGSM Transient

Advance Technical DataVCES = 600 VIXGH 50N60C2HiPerFASTTM IGBTIC25 = 75 AC2-Class High Speed IGBTs IXGT 50N60C2VCE(sat) = 2.7 Vtfi typ = 48 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by

IXGR 50N60C2VCES = 600 VHiPerFASTTMIXGR 50N60C2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.7 VC2-Class High Speed IGBTstfi(typ) = 48 nsPreliminary Data SheetSymbol Test Conditions Maximum RatingsISOPLUS247VCES TJ = 25C to 150C 600 V(IXGR)VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 V(ISOLATED TAB)VGEM Transient 30 VIC25 TC = 25C75 A

IXFC 22N60P VDSS = 600 VPolarHVTM HiPerFETID25 = 12 APower MOSFET RDS(on) 360 m ISOPLUS220TMtrr 200 ns(Electrically Isolated Back Surface)N-Channel Enhancement ModeFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS220TM (IXFC)VDSS TJ = 25 C to 150 C 600 VE153432VDGR T

Preliminary Technical InformationIXTC220N075T VDSS = 75 VTrenchMVTMID25 = 115 APower MOSFET RDS(on) 5.0 m (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS220 (IXTC)E153432VDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C; RGS = 1 M 75 VVGSM Transient

IXGK 60N60C2D1VCES = 600 VHiPerFASTTMIXGX 60N60C2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.5 VC2-Class High Speed IGBTstfi(typ) = 35 nsSymbol Test Conditions Maximum Ratings TO-264 AA(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCVGES Continuous 20 VEVGEM Transient 30 VPLUS247IC25 TC = 25C (limited by leads)

Preliminary Technical InformationIXTC240N055T VDSS = 55 VTrenchMVTMID25 = 132 APower MOSFET RDS(on) 4.0 m (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS240 (IXTC)E153432VDSS TJ = 25C to 175C55 VVDGR TJ = 25C to 175C; RGS = 1 M 55 VVGSM Transient

Advance Technical DataVCES = 600 VIXGH 50N60C2HiPerFASTTM IGBTIC25 = 75 AC2-Class High Speed IGBTs IXGT 50N60C2VCE(sat) = 2.7 Vtfi typ = 48 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by

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MCAC20N15Electrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 150 VIGSS VDS=0V, VGS =25VGate-Source Leakage Current 100 nAIDSS VDS=120V, VGS=0VZero Gate Voltage Drain Current 1 AVGS(th) VDS=VGS, ID=250AGate-Threshold Voltage 2

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MCCMicro Commercial ComponentsTM 2SC248220736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC2482-OPhone: (818) 701-4933Fax: (818) 701-4939 2SC2482-YFeatures High Voltage:Vceo=300V Small collector output capacitance:Cob=3.0pF(Typ)NPN Epoxy meets UL 94 V-0 flammability ratingEpitaxial Silicon Moisture Sensitivity Level 1 Lead Free

MCC2SC2881-OMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 2SC2881-YPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN Silicon With SOT-89 package Power amplifier applications Power Transistors Epoxy meet

MCCTM Micro Commercial Components2SC2120-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC2120-YPhone: (818) 701-4933Fax: (818) 701-4939Features Complementary Pair With 2SA950 Epoxy meets UL 94 V-0 flammability ratingNPN Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates TransistorsRoHS Compliant

MCC2SC2001-MMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC2001-LCA 91311Phone: (818) 701-49332SC2001-KFax: (818) 701-4939Features Capable of 0.6Watts of Power Dissipation. NPN Silicon Collector-current 0. 7APlastic-Encapsulate Collector-base Voltage 30V Operating and storage junction temperature range: -55

MCC2SC2001-MMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC2001-LCA 91311Phone: (818) 701-49332SC2001-KFax: (818) 701-4939Features Capable of 0.6Watts of Power Dissipation. NPN Silicon Collector-current 0. 7APlastic-Encapsulate Collector-base Voltage 30V Operating and storage junction temperature range: -55

2SC2983-OMCCTMMicro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components2SC2983-YCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Low Collector Saturation VoltagePlastic-Encapsulate Execllent current-to-gain characteristics Epoxy meets UL 94 V-0 flammability ratingTransistors Moisture Sensitivity Level 1

MCC2SC2881-OMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 2SC2881-YPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN Silicon With SOT-89 package Power amplifier applications Power Transistors Epoxy meet

2SC2383-RMCCTMMicro Commercial ComponentsMicro Commercial Components 20736 Marilla Street Chatsworth 2SC2383-OCA 91311Phone: (818) 701-49332SC2383-YFax: (818) 701-4939Features Capable of 0.9Watts of Power Dissipation.NPN Silicon Collector-current 1.0A Collector-base Voltage 160VPlastic-Encapsulate Operating and storage junction temperature range: -55O

2SC2712-OMCCMicro Commercial ComponentsTM2SC2712-Y20736 Marilla Street ChatsworthMicro Commercial Components2SC2712-GRCA 91311Phone: (818) 701-49332SC2712-BLFax: (818) 701-4939FeaturesNPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Plastic-Encapsulate Complementary to 2SA1162 Epoxy meets UL 94 V-

2SC2383PElectrical Characteristics @ TA=25C Unless Otherwise SpecifiedParameter Symbol Min Typ Max Units ConditionsV(BR)CBO IC=100A, IE=0Collector-Base Breakdown Voltage 160 VV(BR)CEO IC=10mA, IB=0Collector-Emitter Breakdown Voltage 160 VV(BR)EBO IE=10A, IC=0Emitter-Base Breakdown Voltage 6 VICBO VCB=150V, IE=0Collector-Base Cutoff Current 1 AIEBO VEB=6V, IC=0

2SC2712-OMCCMicro Commercial ComponentsTM2SC2712-Y20736 Marilla Street ChatsworthMicro Commercial Components2SC2712-GRCA 91311Phone: (818) 701-49332SC2712-BLFax: (818) 701-4939FeaturesNPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Plastic-Encapsulate Complementary to 2SA1162 Epoxy meets UL 94 V-

2SC2712-OMCCMicro Commercial ComponentsTM2SC2712-Y20736 Marilla Street ChatsworthMicro Commercial Components2SC2712-GRCA 91311Phone: (818) 701-49332SC2712-BLFax: (818) 701-4939FeaturesNPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Plastic-Encapsulate Complementary to 2SA1162 Epoxy meets UL 94 V-

MCCTM Micro Commercial Components2SC2120-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC2120-YPhone: (818) 701-4933Fax: (818) 701-4939Features Complementary Pair With 2SA950 Epoxy meets UL 94 V-0 flammability ratingNPN Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates TransistorsRoHS Compliant

MCC2SC2001-MMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC2001-LCA 91311Phone: (818) 701-49332SC2001-KFax: (818) 701-4939Features Capable of 0.6Watts of Power Dissipation. NPN Silicon Collector-current 0. 7APlastic-Encapsulate Collector-base Voltage 30V Operating and storage junction temperature range: -55

MCC2SC2873-OTMMicro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC2873-YPhone: (818) 701-4933Fax: (818) 701-4939Features Low saturation voltage NPN Silicon High speed switching time Epitaxial Transistors Complementary to 2SA1213 Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See

EMC2DXV5T1G,EMC3DXV5T1G,EMC4DXV5T1G,EMC5DXV5T1GDual Commonhttp://onsemi.comBase-Collector Bias312Resistor TransistorsR1R2NPN and PNP Silicon Surface MountTransistors with Monolithic BiasQ2R2Resistor NetworkQ1R1The BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series base45resis

NVTFS4C25NPower MOSFET30 V, 17 mW, 22 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX NVTFS4C25NWF - Wettable Flanks Product17 mW @ 10 V NVT Prefix for Automotive and Other Applications Requiring

NSS1C200MZ4,NSV1C200MZ4100 V, 2.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy cont

BC212BAmplifier TransistorsPNP SiliconFeatures These are Pb-Free Devices* http://onsemi.comCOLLECTOR1MAXIMUM RATINGSRating Symbol Value Unit2BASECollector-Emitter Voltage VCEO -50 VdcCollector-Base Voltage VCBO -60 Vdc3EMITTEREmitter-Base Voltage VEBO -5.0 VdcCollector Current - Continuous IC -100 mAdcTotal Device Dissipation @ TA = 25C PD 350 mWDerate a

NSS1C200L, NSV1C200L100 V, 2.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is i

NSS1C201L, NSV1C201L100 V, 3.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationswww.onsemi.comwhere affordable efficient energy control is i

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

UMC2NT1G, UMC3NT1G,UMC5NT1GPreferred DevicesDual CommonBase-Collector BiasResistor Transistorshttp://onsemi.comNPN and PNP Silicon Surface MountTransistors with Monolithic Bias312Resistor NetworkR1R2The Bias Resistor Transistor (BRT) contains a single transistor witha monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter re

NSS1C201MZ4,NSV1C201MZ4100 V, 2.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy cont

VEC2415 Power MOSFET 60V, 80m, 3A, Dual N-Channel This Power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to minimize gate charge and low www.onsemi.com on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features VDSS RDS(on) Max ID Max Low On-Resist

FDMC2514SDCN-Channel Dual CoolTM 33 PowerTrench SyncFETTM25 V, 40 A, 3.5 mGeneral DescriptionThis N-Channel MOSFET is produced using ONSemiconductors advanced PowerTrench process.FeaturesAdvancements in both silicon and Dual CoolTM package Dual CoolTM Top Side Cooling PQFN package technologies have been combined to offer the lowest rDS(on) while maintaining excellent

KSC2383NPN Epitaxial Silicon TransistorTO-92L11. Emitter 2. Collector 3. BaseOrdering InformationPart Number Top Mark Package Packing MethodKSC2383OTA C2383 O- TO-92 3L AmmoKSC2383YTA C2383 Y- TO-92 3L AmmoAbsolute Maximum RatingsStresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-ble above the recommended operatin

NTMFD4C20NDual N-Channel PowerMOSFET30 V, High Side 18 A / Low Side 27 A, DualN-Channel SO8FLhttp://onsemi.comFeaturesV(BR)DSS RDS(ON) MAX ID MAX Co-Packaged Power Stage Solution to Minimize Board Space7.3 mW @ 10 V Minimized Parasitic InductancesQ1 Top FET18 A Optimized Devices to Reduce Power Losses30 V 10.8 mW @ 4.5 V These Devices are Pb-Free, Halog

EMC2DXV5T1G,EMC3DXV5T1G,EMC4DXV5T1G,EMC5DXV5T1GDual Commonhttp://onsemi.comBase-Collector Bias312Resistor TransistorsR1R2NPN and PNP Silicon Surface MountTransistors with Monolithic BiasQ2R2Resistor NetworkQ1R1The BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series base45resis

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

NSS1C201MZ4,NSV1C201MZ4100 V, 2.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy cont

NTTFS4C25NPower MOSFET30 V, 27 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) MAX ID MAXApplications17 mW @ 10 V DC-DC Converters

PNP Transistor, Low VCE(sat)100 V, 2.0 ANSS1C200MZ4,NSV1C200MZ4ON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowwww.onsemi.comsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applications-100 VOLTS, 2.0 AMPSwhere affordable ef

NSS1C200MZ4100 V, 2.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa

NTMFS4C250NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 69 AFeatureswww.onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 4.0 mW @ 10 V30 V 69 ACompliant6.0 mW @ 4.5 VA

UMC2NT1G,NSVUMC2NT1G,UMC3NT1G,NSVUMC3NT1G,UMC5NT1G,NSVUMC5NT2Ghttp://onsemi.comDual CommonBase-Collector BiasResistor TransistorsSC-88A/SOT-353CASE 419ANPN and PNP Silicon Surface MountSTYLE 6Transistors with Monolithic BiasResistor Network 312R1R2The Bias Resistor Transistor (BRT) contains a single transistor witha monolithic bias network consisting of t

NSS1C201MZ4,NSV1C201MZ4100 V, 2.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy cont

Ordering number : EN8699AVEC2315P-Channel Power MOSFEThttp://onsemi.com 60V, 2.5A, 137m , Dual VEC8Features ON-resistance RDS(on)1=105m (typ.) 4V drive High-density mounting Protection diode in Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS -

BC237BAmplifier TransistorsNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*COLLECTOR1MAXIMUM RATINGSRating Symbol Value Unit2BASECollector-Emitter Voltage VCEO 45 VdcCollector-Emitter Voltage VCES 50 Vdc3Collector-Emitter Voltage VEBO 6.0 VdcEMITTERCollector Current - Continuous IC 100 mAdcTotal Power Dissipation @ TA = 25C PD 350 mW

NSS1C201L, NSV1C201L100 V, 3.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationswww.onsemi.comwhere affordable efficient energy control is i

EFC2J004NUZ Power MOSFET for 1-Cell Lithium-ion Battery Protection 12 V, 7.1 m, 14 A, Dual N-Channel www.onsemi.com This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-cell lithium-ion battery applications. VSSS RSS(on) Max IS Max 7.1 m @ 4.5 V Features 7.7 m

EFC2K101NUZPower MOSFETfor 1Cell LithiumionBattery Protection12 V, 6.2 mW, 15 A, Dual N-Channelwww.onsemi.comThis Power MOSFET features a low on-state resistance. This deviceis suitable for applications such as power switches of portableVSSS RSS(ON) MAX IS MAXmachines. Best suited for 1-cell lithium-ion battery applications.12 V 6.2 mW @ 4.5 V 15 AFeatures6.6 mW @

UMC2NT1G,NSVUMC2NT1G,UMC3NT1G,NSVUMC3NT1G,UMC5NT1G,NSVUMC5NT2Ghttp://onsemi.comDual CommonBase-Collector BiasResistor TransistorsSC-88A/SOT-353CASE 419ANPN and PNP Silicon Surface MountSTYLE 6Transistors with Monolithic BiasResistor Network 312R1R2The Bias Resistor Transistor (BRT) contains a single transistor witha monolithic bias network consisting of t

EMC2DXV5T1G,EMC3DXV5T1G,EMC4DXV5T1G,EMC5DXV5T1GDual Commonhttp://onsemi.comBase-Collector Bias312Resistor TransistorsR1R2NPN and PNP Silicon Surface MountTransistors with Monolithic BiasQ2R2Resistor NetworkQ1R1The BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series base45resis

NSS1C201MZ4100 V, 2.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

Ordering number : ENA1822AVEC2616Power MOSFEThttp://onsemi.com 60V, 3A, 80m , 60V, 2.5A, 137m , Complementary Dual VEC8Features ON-resistance Nch: RDS(on)1=62m (typ.), Pch: RDS(on)1=105m (typ.) 4V drive N-channel MOSFET + P-channel MOSFET Halogen free compliance Protection diode inSpecificationsAbsolute Maximum Ratings at Ta=25CP

EMC2DXV5T1G,EMC3DXV5T1G,EMC4DXV5T1G,EMC5DXV5T1GDual Commonhttp://onsemi.comBase-Collector Bias312Resistor TransistorsR1R2NPN and PNP Silicon Surface MountTransistors with Monolithic BiasQ2R2Resistor NetworkQ1R1The BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series base45resis

NSS1C200LT1G100 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is import

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

NSS1C201L, NSV1C201L100 V, 3.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is i

NTLUD4C26NProduct PreviewPower MOSFET30 V, 7.3 A, Dual N-Channel,2.0x2.0x0.55 mm mCoolt UDFN6 PackageFeatures www.onsemi.com UDFN Package with Exposed Drain Pads for Excellent ThermalMOSFETConductionV(BR)DSS RDS(on) MAX ID MAX Low Profile UDFN 2.0 x 2.0 x 0.55 mm for Board Space Saving21 mW @ 10 V Ultra Low RDS(on)24 mW @ 4.5 V These Devices are Pb-Free,

NPN Epitaxial SiliconTransistorKSC2383ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25C unless otherwise noted.)www.onsemi.comSymbol Parameter Value UnitVCBO Collector-Base Voltage 160 VVCEO Collector-Emitter Voltage 160 VVEBO Emitter-Base Voltage 6 VIC Collector Current 1 AIB Base Current 0.5 ATO-92 3 LFCASE 135AMTJ Junction Temperature 150 CTSTG Storage Temper

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

UMC2NT1G,NSVUMC2NT1G,UMC3NT1G,NSVUMC3NT1G,UMC5NT1G,NSVUMC5NT2Ghttp://onsemi.comDual CommonBase-Collector BiasResistor TransistorsSC-88A/SOT-353CASE 419ANPN and PNP Silicon Surface MountSTYLE 6Transistors with Monolithic BiasResistor Network 312R1R2The Bias Resistor Transistor (BRT) contains a single transistor witha monolithic bias network consisting of t

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MSC2712GT1G,MSC2712YT1GGeneral PurposeAmplifier TransistorNPN Surface Mountwww.onsemi.comFeaturesSC-59 Moisture Sensitivity Level: 1 CASE 318DSTYLE 1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantMARKING DIAGRAMS12G MG 12Y MGMAXIMUM RATINGS (TA = 25C)G GRating Symbol Value UnitCollector-Base Voltage V(BR)CBO 60 Vdc12M, 12Y = Sp

MOSFET - Power for 1-CellLithium-ion BatteryProtectionEFC2K103NUZ12 V, 1.8 mW, 40 A, Dual N-Channelwww.onsemi.comThis power MOSFET features a low on-state resistance. Thisdevice is suitable for applications such as power switches of portableVSSS RSS(ON) MAX IS MAXmachines. Best suited for 1-cell lithium-ion battery applications.12 V 1.8 mW @ 4.5 V 40 AFeatures1.9 mW @ 3.

EFC2J013NUZPower MOSFETfor 1Cell LithiumionBattery Protection12 V, 5.8 mW, 17 A, Dual N-Channelwww.onsemi.comThis Power MOSFET features a low on-state resistance. This deviceis suitable for applications such as power switches of portableVSSS RSS(ON) MAX IS MAXmachines. Best suited for 1-cell lithium-ion battery applications.12 V 5.8 mW @ 4.5 V 17 AFeatures6.2 mW @

MSC2295-BT1,MSC2295-CT1Preferred Device NPN RF AmplifierTransistors Surface MountFeatureshttp://onsemi.com Pb-Free Packages are AvailableCOLLECTOR3MAXIMUM RATINGS (TA = 25C)Rating Symbol Value UnitCollector-Base Voltage V(BR)CBO 30 VdcCollector-Emitter Voltage V(BR)CEO 20 Vdc2 1Emitter-Base Voltage V(BR)EBO 5.0 VdcBASE EMITTERCollector Current - Continuous

EFC2K107NUZMOSFET Power, Dual,N-Channel, for 1-CellLithium-ion BatteryProtectionwww.onsemi.com12 V, 2.85 mW, 20 AThis Power MOSFET features a low on-state resistance. This deviceVSSS RSS(ON) MAX IS MAXis suitable for applications such as power switches of portable12 V 2.85 mW @ 4.5 V 20 Amachines. Best suited for 1-cell lithium-ion battery applications.3.1 mW @ 3.8 V

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MSC2712GT1, MSC2712YT1General PurposeAmplifier TransistorNPN Surface Mounthttp://onsemi.comFeatures Moisture Sensitivity Level: 1COLLECTOR Pb-Free Packages are Available3MAXIMUM RATINGS (TA = 25C)Rating Symbol Value Unit2 1Collector-Base Voltage V(BR)CBO 60 VdcBASE EMITTERCollector-Emitter Voltage V(BR)CEO 50 VdcEmitter-Base Voltage V(BR)EBO 7.0 Vdc3C

NSS1C200L, NSV1C200L100 V, 2.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is i

NSS1C200MZ4,NSV1C200MZ4100 V, 2.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy cont

NPN Epitaxial SiliconTransistorKSC2328AFeatures Audio Power Amplifier Applicationwww.onsemi.com Complement to KSA928A 3 W Output ApplicationABSOLUTE MAXIMUM RATINGS (Values are at TA = 25C unless otherwise noted.)Symbol Parameter Value UnitVCBO Collector-Base Voltage 30 VTO-92 3 LF TO-92 3CASE 135AM CASE 135APVCEO Collector-Emitter Voltage 30 VVEBO Emitt

NTMFS4C290NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 46 AFeatures Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS6.95 mW @ 10 VCompliant30 V 46 A10.8 mW @ 4.5 V

MSC2712GT1G,MSC2712YT1GGeneral PurposeAmplifier TransistorNPN Surface Mountwww.onsemi.comFeaturesSC-59 Moisture Sensitivity Level: 1 CASE 318DSTYLE 1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantMARKING DIAGRAMS12G MG 12Y MGMAXIMUM RATINGS (TA = 25C)G GRating Symbol Value UnitCollector-Base Voltage V(BR)CBO 60 Vdc12M, 12Y = Sp

This product complies with the RoHS Directive (EU 2002/95/EC).DSC2005Silicon NPN epitaxial planar typeFor general amplificationComplementary to DSA2005 Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, mount area reductio

This product complies with the RoHS Directive (EU 2002/95/EC).DRC2144VSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2144V Package Features Code Low collector-emitter saturation voltage VCE(sat) Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Pin Name Eco-friendly Halogen-free package 1: Base

This product complies with the RoHS Directive (EU 2002/95/EC).DRC2115ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2115E Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1: Ba

This product complies with the RoHS Directive (EU 2002/95/EC).DMC206E2Silicon NPN epitaxial planar typeFor high-frequency amplificationDMC506E2 in Mini6 type package Features Package High transition frequency fT Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free package Pin Name 1: Emitter (

Transistor2SC2671(F)Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesLow noise figure NF.High gain.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)+0.2 +0.2Parameter Symbol Ratings Unit0.45 0.1 0.45 0.1Collector to base voltage VCBO 15 V1.27 1.27Collector to emitter voltage VCER* 14 VE

Power Transistors2SC2209Silicon NPN epitaxial planar typeFor low-frequency power amplificationUnit: mm7.5+0.50.1 2.90.2Complementary to 2SA0963120 Features Large collector power dissipation PC Output of 5 W can be obtained by a complementary pair with2SA0963 Absolute Maximum Ratings Ta = 25CParameter Symbol Rating Unit0.750.1Collector-base

This product complies with the RoHS Directive (EU 2002/95/EC).DRC2144GSilicon NPN epitaxial planar typeFor digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1: Base Packaging 2: Emitt

Transistor2SC2671(F)Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesLow noise figure NF.High gain.High transition frequency fT.Absolute Maximum Ratings (Ta=25C)+0.2 +0.2Parameter Symbol Ratings Unit0.45 0.1 0.45 0.1Collector to base voltage VCBO 15 V1.27 1.27Collector to emitter voltage VCER* 14 VE

This product complies with the RoHS Directive (EU 2002/95/EC).DMC26100Silicon NPN epitaxial planar typeFor digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Name

This product complies with the RoHS Directive (EU 2002/95/EC).DMC20501Silicon NPN epitaxial planar typeFor general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. Pin Nam

This product complies with the RoHS Directive (EU 2002/95/EC).DMC26106Silicon NPN epitaxial planar typeFor digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Name

Transistors2SC2925Silicon NPN epitaxial planar typeFor low-frequency output amplificationUnit: mm5.00.2 4.00.2 Features High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat)0.70.1 Absolute Maximum Ratings Ta = 25CParameter Symbol Rating Unit0.45+0.15 0.45+0.150.1 0.1Collector-base voltage (Emitter open) VC

This product complies with the RoHS Directive (EU 2002/95/EC).DRC2123JSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2123J Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1: Base

This product complies with the RoHS Directive (EU 2002/95/EC).DRC2523ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2523E Package Features Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini3-G3-B Pin Name Packaging 1: BaseEmbossed type (Thermo-compression se

This product complies with the RoHS Directive (EU 2002/95/EC).DSC2501Silicon NPN epitaxial planar typeFor low frequency amplification Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B-B Eco-friendly Halogen-free package Pin Name Packaging 1. Bas

This product complies with the RoHS Directive (EU 2002/95/EC).DRC2114ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2114E Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1: Base

Transistor2SC2188Silicon NPN epitaxial planer typeFor intermediate frequency amplification of TV imageUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High transition frequency fT.Satisfactory linearity of forward current transfer ratio hFE.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85

This product complies with the RoHS Directive (EU 2002/95/EC).DMC204A0Silicon NPN epitaxial planar typeFor low frequency amplification Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free package Pin Name 1: Emitter (Tr1) 4: E

Transistor2SC2295Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA1022+0.22.8 0.3+0.25Features 0.65 0.15 1.5 0.05 0.65 0.15Optimum for RF amplification of FM/AM radios.High transition frequency fT.1Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the mag

This product complies with the RoHS Directive (EU 2002/95/EC).DRC2114YSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2114Y Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1: Ba

This product complies with the RoHS Directive (EU 2002/95/EC).DRC2143TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2143T Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of component c

This product complies with the RoHS Directive (EU 2002/95/EC).DSC2A01Silicon NPN epitaxial planar typeFor low frequency amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of component count. Pin

Transistors2SC2377Silicon NPN epitaxial planar typeFor high-frequency amplification Unit: mm2.50.16.90.1(1.0)(1.5) Features(1.5) Optimum for RF amplification of FM/AM radios High transition frequency fT R 0.9 M type package allowing easy automatic and manual insertion R 0.7as well as stand-alone fixing to the printed circuit board(0.85) Absolute

This product complies with the RoHS Directive (EU 2002/95/EC).DSC2001Silicon NPN epitaxial planar typeFor general amplificationComplementary to DSA2001 Features Package Low collector-emitter saturation voltage VCE(sat) Code High forward current transfer ratio hFE with excellent linearity Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1. Base

This product complies with the RoHS Directive (EU 2002/95/EC).DMC26601Silicon NPN epitaxial planar typeFor digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free package Pin Name 1: Emitter (Tr1) 4: Collector (T

This product complies with the RoHS Directive (EU 2002/95/EC).DRC2643TSilicon NPN epitaxial planar typeFor digital circuits Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini3-G3-B Pin Name Packaging 1: BaseEmbossed type (Thermo-compression sealing): 3000 pcs / reel (sta

Transistor2SC2778Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesOptimum for RF amplification, oscillation, mixing, and IF of FM/AM radios.1Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazinepacking.2Abso

This product complies with the RoHS Directive (EU 2002/95/EC).DMC26405Silicon NPN epitaxial planar typeFor digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. Pin Name

This product complies with the RoHS Directive (EU 2002/95/EC).DRC2114TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2114T Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of component c

This product complies with the RoHS Directive (EU 2002/95/EC).DRC2523YSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2523Y Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini3-G3-B Pin Name Packaging 1: BaseEmbossed type (Thermo-compression sea

Transistor2SC2377Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9Optimum for RF amplification of FM/AM radios.High transition frequency fT.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45 0.05Absolute Max

This product complies with the RoHS Directive (EU 2002/95/EC).DMC26605Silicon NPN epitaxial planar typeFor digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. Pin Name

This product complies with the RoHS Directive (EU 2002/95/EC).DSC2G02Silicon NPN epitaxial planar typeFor high-frequency amplification Features Package High forward current transfer ratio hFE with excellent linearity Code High transition frequency fT Mini3-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Name Eco-frie

This product complies with the RoHS Directive (EU 2002/95/EC).DMC26604Silicon NPN epitaxial planar typeFor digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free package Pin Name 1: Emitter (Tr1) 4: Collector (Tr2)

This product complies with the RoHS Directive (EU 2002/95/EC).DSC2002Silicon NPN epitaxial planar typeFor general amplificationComplementary to DSA2002 Features Package Low collector-emitter saturation voltage VCE(sat) Code High forward current transfer ratio hFE with excellent linearity Mini3-G3-B-B Eco-friendly Halogen-free package Pin Name 1. Base

This product complies with the RoHS Directive (EU 2002/95/EC).DRC2113ZSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2113Z Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1: Base

Transistor2SC2631Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SA11235.0 0.2 4.0 0.2FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.Small collector output capacitance Cob.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2

This product complies with the RoHS Directive (EU 2002/95/EC).DRC2115GSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2115G Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1: Base

This product complies with the RoHS Directive (EU 2002/95/EC).DRC2124XSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2124X Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Name E

Power Transistors2SC2258Silicon NPN triple diffusion planar typeFor high breakdown voltage general amplificationUnit: mm8.0+0.50.13.20.2 3.160.1 Features High collector-emitter voltage (Base open) VCEO High transition frequency fT TO-126B package which requires no insulation plate for installa-tion to the heat sink Absolute Maximum Ratings Ta

This product complies with the RoHS Directive (EU 2002/95/EC).DRC2143YSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2143Y Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Name

This product complies with the RoHS Directive (EU 2002/95/EC).DMC26606Silicon NPN epitaxial planar typeFor digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. Pin Name

This product complies with the RoHS Directive (EU 2002/95/EC).DRC2514ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2514E Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini3-G3-B Pin Name Packaging 1: BaseEmbossed type (Thermo-compression se

Transistor2SC2405, 2SC2406Silicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SA1034 and 2SA1035Features+0.22.8 0.3 Low noise voltage NV.+0.250.65 0.15 1.5 0.05 0.65 0.15 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape

This product complies with the RoHS Directive (EU 2002/95/EC).DMC205E0Silicon NPN epitaxial planar typeFor High frequency amplificationDMC505E0 in Mini6 type package Features Package High transition frequency fT Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free package Pin Name 1: Emitter

This product complies with the RoHS Directive (EU 2002/95/EC).DRC2144WSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2144W Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1: Base

Transistor2SC2636Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High transition frequency fT.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85Absolute Maximum Ratings (Ta=25C) 0.55 0.1 0.45 0.05Paramete

This product complies with the RoHS Directive (EU 2002/95/EC).DRC2543ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2543E Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini3-G3-B Pin Name Packaging 1: BaseEmbossed type (Thermo-compression se

This product complies with the RoHS Directive (EU 2002/95/EC).DMC26104Silicon NPN epitaxial planar typeFor digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini5-G3-B Eco-friendly Halogen-free package Pin Name 1: Base (Tr1) 4: Collector (Tr2)

This product complies with the RoHS Directive (EU 2002/95/EC).DMC20401Silicon NPN epitaxial planar typeFor general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. Pin Nam

This product complies with the RoHS Directive (EU 2002/95/EC).DMC26105Silicon NPN epitaxial planar typeFor digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Name

Power Transistors2SC2497, 2SC2497ASilicon NPN epitaxial planar typeUnit: mmFor low-frequency power amplification8.0+0.50.13.20.2Complementary to 2SA1096 and 2SA1096A 3.160.1 Features High collector to emitter voltage VCEO TO-126B package which requires no insulation plate for installa-tion to the heat sink Absolute Maximum Ratings TC = 25CParameter

This product complies with the RoHS Directive (EU 2002/95/EC).DMC26404Silicon NPN epitaxial planar typeFor digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free package Pin Name 1: Emitter (Tr1) 4: Emitter (Tr2

This product complies with the RoHS Directive (EU 2002/95/EC).DMC2640FSilicon NPN epitaxial planar typeFor digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free package Pin Name 1: Emitter (Tr1) 4: Emitter (Tr2

This product complies with the RoHS Directive (EU 2002/95/EC).DMC20601Silicon NPN epitaxial planar typeFor general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. Pin Nam

Transistor2SC2480Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillation/mixingUnit: mm+0.22.8 0.3+0.25Features 0.65 0.15 1.5 0.05 0.65 0.15High transition frequency fT.Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazinepacking.32Absolute Maximum Ratings (Ta=25

This product complies with the RoHS Directive (EU 2002/95/EC).DRC2123ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2123E Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini3-G3-B Pin Name Packaging 1: BaseEmbossed type (Thermo-compression se

This product complies with the RoHS Directive (EU 2002/95/EC).DMC20201Silicon NPN epitaxial planar typeFor general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Nam

This product complies with the RoHS Directive (EU 2002/95/EC).DMC201A0Silicon NPN epitaxial planar typeFor low frequency amplification Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini5-G3-B Eco-friendly Halogen-free package Pin Name 1: Base (Tr1) 4: Coll

Transistors2SC2480Silicon NPN epitaxial planer typeUnit: mm0.40+0.10For high-frequency amplification / oscillation / mixing 0.050.16+0.100.063 Features1 2 High transition frequency fT(0.95) (0.95) Mini type package, allowing downsizing of the equipment and1.90.1automatic insertion through the tape packing and the magazine2.90+0.200.05packing.

This product complies with the RoHS Directive (EU 2002/95/EC).DRC2115TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2115T Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1: Base

This product complies with the RoHS Directive (EU 2002/95/EC).DMC205C0Silicon NPN epitaxial planar typeFor low frequency amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. P

This product complies with the RoHS Directive (EU 2002/95/EC).DMC2640LSilicon NPN epitaxial planar typeFor digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free package Pin Name 1: Emitter (Tr1) 4: Emitter (Tr2

This product complies with the RoHS Directive (EU 2002/95/EC).DMC26401Silicon NPN epitaxial planar typeFor digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free package Pin Name 1: Emitter (Tr1) 4: Emitter (Tr2

This product complies with the RoHS Directive (EU 2002/95/EC).DRC2114WSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2114W Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1: Base

Transistor2SC2405, 2SC2406Silicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SA1034 and 2SA1035Features+0.22.8 0.3 Low noise voltage NV.+0.250.65 0.15 1.5 0.05 0.65 0.15 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape

Transistor2SC2634Silicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SA11275.0 0.2 4.0 0.2FeaturesLow noise voltage NV.High foward current transfer ratio hFE.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO 60 V 0.45 0.1 0.45 0.11.27 1.27Collector to

This product complies with the RoHS Directive (EU 2002/95/EC).DRC2143ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2143E Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1: Ba

This product complies with the RoHS Directive (EU 2002/95/EC).DRC2143XSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2143E Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1: Base

Power Transistors2SC2590Silicon NPN epitaxial planar typeFor low-frequency power amplificationUnit: mm8.0+0.50.13.20.2 3.160.1 Features Excellent collector current IC characteristics of forward currenttransfer ratio hFE High transition frequency fT TO-126B package which requires no insulation plate for installa-tion to the heat sink Absolute

Transistor2SC2188Silicon NPN epitaxial planer typeFor intermediate frequency amplification of TV imageUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High transition frequency fT.Satisfactory linearity of forward current transfer ratio hFE.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85

This product complies with the RoHS Directive (EU 2002/95/EC).DRC2124TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2124T Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of compone

Transistor2SC2778Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesOptimum for RF amplification, oscillation, mixing, and IF of FM/AM radios.1Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazinepacking.2Abso

This product complies with the RoHS Directive (EU 2002/95/EC).DMC2610ESilicon NPN epitaxial planar typeFor digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini5-G3-B Eco-friendly Halogen-free package Pin Name 1: Base (Tr1) 4: Collector (Tr2)

Transistor2SC2851Silicon NPN epitaxial planer typeFor high-frequency power amplificationUnit: mm5.9 0.2 4.9 0.2FeaturesHigh transition frequency fT.Output of 0.6W is obtained in the VHF band (f = 175MHz).0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 36 VCollector to emitter voltage VCEO 16 V+0

This product complies with the RoHS Directive (EU 2002/95/EC).DRC2124ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2124E Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1: Base

This product complies with the RoHS Directive (EU 2002/95/EC).DMC26102Silicon NPN epitaxial planar typeFor digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini5-G3-B Eco-friendly Halogen-free package Pin Name 1: Base (Tr1) 4: Collector (Tr2)

This product complies with the RoHS Directive (EU 2002/95/EC).DSC2C01Silicon NPN epitaxial planar typeFor low frequency amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of component count. Pi

This product complies with the RoHS Directive (EU 2002/95/EC).DSC2P01Silicon NPN epitaxial planar typeFor low frequency amplificationDarlington connectionDSC8P01 in Mini3 type package Package Features Code High forward current transfer ratio hFE with excellent linearity Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B-B Eco

Transistor2SC2634Silicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SA11275.0 0.2 4.0 0.2FeaturesLow noise voltage NV.High foward current transfer ratio hFE.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO 60 V 0.45 0.1 0.45 0.11.27 1.27Collector to

This product complies with the RoHS Directive (EU 2002/95/EC).DMC26403Silicon NPN epitaxial planar typeFor digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free package Pin Name 1: Emitter (Tr1) 4: Emitter (Tr2

This product complies with the RoHS Directive (EU 2002/95/EC).DMC20101Silicon NPN epitaxial planar typeFor general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Nam

This product complies with the RoHS Directive (EU 2002/95/EC).DSC2G03Silicon NPN epitaxial planar typeFor high-frequency amplification Features Package High forward current transfer ratio hFE with excellent linearity Code High transition frequency fT Mini3-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Name Eco-frie

This product complies with the RoHS Directive (EU 2002/95/EC).DRC2144TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2144T Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of component c

This product complies with the RoHS Directive (EU 2002/95/EC).DRC2143ZSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2143E Package Features Code High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Pin Name Contributes to miniaturization of sets, reduction of component count.

This product complies with the RoHS Directive (EU 2002/95/EC).DRC2152ZSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2152Z Package Features Code Low collector-emitter saturation voltage VCE(sat) Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Pin Name Eco-friendly Halogen-free package 1: Base

Transistor2SC2295Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA1022+0.22.8 0.3+0.25Features 0.65 0.15 1.5 0.05 0.65 0.15Optimum for RF amplification of FM/AM radios.High transition frequency fT.1Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the mag

This product complies with the RoHS Directive (EU 2002/95/EC).DMC26406Silicon NPN epitaxial planar typeFor digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. Pin Name

This product complies with the RoHS Directive (EU 2002/95/EC).DMC204B3Silicon NPN epitaxial planar typeFor general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. Pin Nam

Transistor2SC2404Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm+0.22.8 0.3+0.25Features 0.65 0.15 1.5 0.05 0.65 0.15Optimum for RF amplification of FM/AM radios.High transition frequency fT.1Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Abs

Transistor2SC2647Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0R0.9FeaturesOptimum for RF amplification, oscillation, mixing, and IF of FM/AM radios.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45 0.05Absolute Ma

Transistor2SC2631Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SA11235.0 0.2 4.0 0.2FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.Small collector output capacitance Cob.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2

Transistors2SC2206Silicon NPN epitaxial planar typeFor high-frequency amplification Unit: mmComplementary to 2SA12542.50.16.90.1(1.0)(1.5)(1.5) FeaturesR 0.9 Optimum for RF amplification of FM/AM radiosR 0.7 High transition frequency fT M type package allowing easy automatic and manual insertionas well as stand-alone fixing to the printed circuit

This product complies with the RoHS Directive (EU 2002/95/EC).DMC204C0Silicon NPN epitaxial planar typeFor low frequency amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. P

This product complies with the RoHS Directive (EU 2002/95/EC).DMC26101Silicon NPN epitaxial planar typeFor digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini5-G3-B Eco-friendly Halogen-free package Pin Name 1: Base (Tr1) 4: Collector (Tr2)

Transistor2SC2925Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 60 V+0.2 +0.20.45 0.1 0.45 0.1Collector to emitter vo

This product complies with the RoHS Directive (EU 2002/95/EC).DRC2614TSilicon NPN epitaxial planar typeFor digital circuits / muting Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini3-G3-B Pin Name Packaging 1: BaseEmbossed type (Thermo-compression sealing): 3000 pcs /

This product complies with the RoHS Directive (EU 2002/95/EC).DMC20402Silicon NPN epitaxial planar typeFor general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free package Pin Name 1: Emitter (

Transistor2SC2632Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SA11245.9 0.2 4.9 0.2FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.Small collector output capacitance Cob.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Sy

This product complies with the RoHS Directive (EU 2002/95/EC).DRC2144ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA2144E Package Features Code Low collector-emitter saturation voltage VCE(sat) Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Pin Name Eco-friendly Halogen-free package 1: Base

This product complies with the RoHS Directive (EU 2002/95/EC).DSC2F01Silicon NPN epitaxial planar typeFor high-frequency amplification Features Package High transition frequency fT Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1. Base Packaging 2. EmitterEmbos

This product complies with the RoHS Directive (EU 2002/95/EC).DMC201E0Silicon NPN epitaxial planar typeFor High frequency amplification Features Package High transition frequency fT Code Contributes to miniaturization of sets, reduction of component count. Mini5-G3-B Eco-friendly Halogen-free package Pin Name 1: Base (Tr1) 4: Collector (Tr2) Ba

Transistor2SC2206Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA12546.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9Optimum for RF amplification of FM/AM radios.High transition frequency fT.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1

This product complies with the RoHS Directive (EU 2002/95/EC).DMC26402Silicon NPN epitaxial planar typeFor digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free package Pin Name 1: Emitter (Tr1) 4: Emitter (Tr2

This product complies with the RoHS Directive (EU 2002/95/EC).DMC26603Silicon NPN epitaxial planar typeFor digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free package Pin Name 1: Emitter (Tr1) 4: Collector (T

This product complies with the RoHS Directive (EU 2002/95/EC).DMC26103Silicon NPN epitaxial planar typeFor digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini5-G3-B Eco-friendly Halogen-free package Pin Name 1: Base (Tr1) 4: Collector (Tr2)

Transistor2SC2632Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SA11245.9 0.2 4.9 0.2FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.Small collector output capacitance Cob.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Sy

Transistor2SC2647Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0R0.9FeaturesOptimum for RF amplification, oscillation, mixing, and IF of FM/AM radios.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45 0.05Absolute Ma

This product complies with the RoHS Directive (EU 2002/95/EC).DMC26400Silicon NPN epitaxial planar typeFor digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets, reduction of component count. Pin Name

Transistor2SC2404Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm+0.22.8 0.3+0.25Features 0.65 0.15 1.5 0.05 0.65 0.15Optimum for RF amplification of FM/AM radios.High transition frequency fT.1Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Abs

TC2320N- and P-Channel Enhancement-Mode Dual MOSFETFeatures General DescriptionThe Supertex TC2320 consists of a high voltage, low Low thresholdthreshold N- and P-channel MOSFET in an 8-Lead SOIC Low on-resistancepackage. This low threshold enhancement-mode (normally- Low input capacitanceoff) transistor utilizes an advanced vertical DMOS structure Fast switch

Product TC2320TGSummary N- and P-Channel Enhancement-Mode Dual MOSFETSheetTC2320TGTC2320TG+100V+100V12V12VLogic InputLogic InputApplications10nF10nF- Medical ultrasoundtransmitters- High voltage pulsersPiezoPiezo12V12VElectricElectric- Amplifiers Analog SwitchAnalog SwitchTransducerTransducerLogic InputLogic Input- Buffers10nF10nF-

UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: TSTG=1.0s (Typ.) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3- 2SC2655Gx-AB3-R SOT-89 B C E Tape Reel-

UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre 3.0 pF (VCB=30V) fT 50MHz (VCE=30V, IE=-10mA) ORDERING INFORMATION O

UNISONIC TECHNOLOGIES CO., LTD 2SC2235 NPN SILICON TRANSISTOR AUDIO POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS 1TO-92 FEATURES * Complimentary to UTC 2SA965 1TO-92NL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC2235L-x-T92-B 2SC2235G-x-T92-B TO-92 E C B Tape Box 2SC2235L-x-T92-K 2S

UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: TSTG=1.0s (Typ.) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 32SC2655L-x-AB3-R 2SC2655G-x-AB3-R SOT-89 B C E T

UNISONIC TECHNOLOGIES CO., LTD 2SC2328A NPN EPITAXIAL SILICON TRANSISTOR AUDIO POWER AMPLIFIER FEATURES * Collector Dissipation Pc=1 W * 3 W Output Application * Complement of 2SA928A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC2328AL-x-T92-B 2SC2328AG-x-T92-B TO-92 E C B Tape Box2SC2328AL-x-T92-K 2SC2328AG-x-T9

UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA (Max.) * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 - 2S

UNISONIC TECHNOLOGIES CO., LTD TC200 Preliminary NPN EPITAXIAL SILICON TRANSISTOR EPITAXIAL PLANAR NPN TRANSISTOR DESCRIPTION The UTC TC200 is an epitaxial planar NPN transistor; it uses UTCs advanced technology to provide the customers with high DC current gain and low collector-emitter saturation voltage, etc. The UTC TC200 is suitable for general purpose and switching

UNISONIC TECHNOLOGIES CO., LTD 2SC2383 Preliminary NPN EPITAXIAL SILICON TRANSISTOR COLOR TV AUDIO OUTPUT & COLOR TV VERTICAL OUTPUT DESCRIPTION The UTC 2SC2383 is an NPN epitaxial silicon transistor, it uses UTCs advanced technology to provide customers high DC current gain and high breakdown voltage. The UTC 2SC2383 is usually used in Color TV Vertical Deflection Output

STC201FNPN Silicon TransistorPIN Connection Descriptions General purpose amplifier High current application Features High hFE : hFE=160~320 Low collector saturation voltage : VCE(sat)=0.5V(MAX.) SOT-89 Ordering Information Type No. Marking Package Code C201 STC201F SOT-89 YWW C201: DEVICE CODE, YWW(Y : Year code, WW : Weekly code) Absolute ma

STC2073QNPN Silicon TransistorPIN Connection Descriptions General purpose amplifier High voltage application Features High collector breakdown voltage : VCEO = 160V Low collector saturation voltage : VCE(sat)=0.5V(MAX.) SOT-223 Ordering Information Type No. Marking Package Code STC2073Q STC2073 SOT-223 : Year & Week Code Absolute maximum

STC2073DNPN Silicon TransistorDescriptions PIN Connection General purpose amplifier High voltage application Features High collector breakdown voltage : VCEO = 160V Low collector saturation voltage : VCE(sat)=0.5V(MAX.) TO-252 Ordering Information Type No. Marking Package Code STC2073D STC2073 TO-252Marking Information STC 2073 Column 1, 2

STC2073LNPN Silicon TransistorPIN Connection Descriptions General purpose amplifier High voltage application Features High collector breakdown voltage : VCEO = 160V Low collector saturation voltage : VCE(sat)=0.5V(MAX.) 1: Emitter 2 :Collector 3: Base Ordering Information Type No. Marking Package Code STC STC2073L 2073 TO-92L YWW STC2073: DEVICE

STC221FNPN Silicon TransistorPIN Connection Descriptions General purpose amplifier High current application Features High hFE : hFE=160~320 Low collector saturation voltage : VCE(sat)=0.5V(MAX.) SOT-89 Ordering Information Type No. Marking Package Code C221 STC221F SOT-89 YWW C221: DEVICE CODE, YWW(Y : Year code, WW : Weekly code) Absolute ma

STC2073FNPN Silicon TransistorDescriptions PIN Connection General purpose amplifier 4 High voltage application Features High collector breakdown voltage : VCEO = 160V 1 2 3 Low collector saturation voltage : VCE(sat)=0.5V(MAX.) SOT-89 Green device and RoHS compliant device Available in full lead (Pb)-free device Ordering Information

VDS 1200 VID(MAX) @ 25C 17.7 AC2M0160120D RDS(on) 160 m Silicon Carbide Power MOSFET TM Z-FET MOSFETN-Channel Enhancement ModeFeatures Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Resistant to Latch-Up Halogen Free, RoHS CompliantBenefitsTO-247-3 Higher Syst

VDS 1700 VID @ 25C 5.3 AC2M1000170J RDS(on) 1.0 Silicon Carbide Power MOSFET TM C2M MOSFET TechnologyN-Channel Enhancement ModeFeatures PackageTAB High blocking voltage with low RDS(on)Drain Easy to parallel and simple to drive Low parasitic inductance Separate driver source pin Ultra-low drain-gate capacitance Halogen Free, RoHS compli

VDS 1200 VID @ 25C 31.6 AC2M0080120D RDS(on) 80 m Silicon Carbide Power MOSFET TM Z-FET MOSFETN-Channel Enhancement ModeFeatures Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS CompliantTO-247-3 Benef

VDS 1700 VID @ 25C 4.9 AC2M1000170D RDS(on) 1.0 Silicon Carbide Power MOSFET TM Z-FET MOSFETN-Channel Enhancement ModeFeatures Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Resistant to Latch-Up Halogen Free, RoHS CompliantBenefitsTO-247-3 Higher System Effi

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

FMC20N50ES FUJI POWER MOSFETSuper FAP-E3S series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack (S)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (4.20.

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

FMC20N50E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(S)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

2SC2463Silicon NPN EpitaxialApplicationLow frequency amplifierOutlineMPAK311. Emitter2. Base23. Collector2SC2463Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 55 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 5VCollector current IC 100 mACollector power dissipation PC 150 mWJunction temper

2SC2471Silicon NPN EpitaxialApplication UHF Amplifier UHF TV Tuner, Local oscillatorOutlineTO-92 (2)1. Base2. Emitter3. Collector3212SC2471Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 30 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power diss

2SC2735Silicon NPN EpitaxialApplicationUHF/VHF Local oscillator, frequency converterOutlineMPAK311. Emitter2. Base23. Collector2SC2735Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power dissipation PC 15

2SC2611Silicon NPN Triple DiffusedApplicationHigh voltage amplifier TV VIDEO outputOutlineTO-126 MOD1. Emitter2. Collector3. Base123Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 300 VCollector to emitter voltage VCEO 300 VEmitter to base voltage VEBO 5VCollector current IC 100 mACollector power dissipation PC 1.25