C400 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DISCRETE SEMICONDUCTORSDATA SHEETPTC4001TNPN microwave power transistor1997 Feb 18Product specificationSupersedes data of November 1994File under Discrete Semiconductors, SC15Philips Semiconductors Product specificationNPN microwave power transistor PTC4001TFEATURES QUICK REFERENCE DATAMicrowave performance up to Th =25C in an oscillator circuit up to 3 GHz. Diffus

Ordering number:EN2959ANPN Triple Diffused Planar Silicon Transistor2SC4003High-Voltage Driver ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Adoption of MBIT process.2045B Excellent hFE linearity.[2SC4003]1 : Base2 : Collector3 : Emitter4 : CollectorSANYO : TPunit:mm2044B[2SC4003]1 : Base2 : Collector3 : Emitter4 : Co

Ordering number:EN2272ANPN Planar Type Silicon Darlington Transistor2SC4006Driver ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2041A[2SC4006]4.510.0Features2.83.2 High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 50 8

Ordering number:EN2960NPN Triple Diffused Planar Silicon Transistor2SC4002High-Voltage Driver ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Adoption of MBIT process.2003B Excellent hFE linearity.[2SC4002]5.04.04.00.450.50.440.451 : Emitter2 : Collector3 : Base1 2 3SANYO : NPJEDEC : TO-921.3 1.3EIAJ : SC-43Spec

Ordering number:EN2271ANPN Planar Type Silicon Darlington Transistor2SC4005Driver ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2041A[2SC4005]4.510.0Features2.83.2 High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 50 8

This product complies with the RoHS Directive (EU 2002/95/EC).DSC4005Silicon NPN epitaxial planar typeFor general amplificationComplementary to DSA4005DSC2005 in NS through hole type package Package Features Code High forward current transfer ratio hFE with excellent linearity NS-B2-B-B Low collector-emitter saturation voltage VCE(sat)Package dimension cli

This product complies with the RoHS Directive (EU 2002/95/EC).DSC4001Silicon NPN epitaxial planar typeFor general amplificationComplementary to DSA4001DSC2001 in NS through hole type package Package Features Code High forward current transfer ratio hFE with excellent linearity NS-B2-B-B Low collector-emitter saturation voltage VCE(sat) Pin Name Con

This product complies with the RoHS Directive (EU 2002/95/EC).DSC4002 (Tentative)Silicon NPN epitaxial planar typeFor general amplification Packaging PackageRadial type : 5000 pcs / carton Code Absolute Maximum Ratings Ta = 25C NS-B1-B Pin NameParameter Symbol Rating Unit 1. EmitterCollector-base voltage (Emitter open) VCBO 60 V 2. CollectorCollector

Power Transistors2SC4004Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh-speed switchingHigh collector to base voltage VCBO 3.1 0.1Wide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to th

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4004 DESCRIPTION With TO-220Fa package Satisfactory linearity of foward current transfer ratio hFE Wide area of safe operation (ASO) High-speed switching High collector to base voltage VCBO APPLICATIONS For high breakdown voltage high-speed switching PINNING PIN DESCRIPTION1 Base 2 Collec

2SC4003(NPN) TO-251/TO-252-2L TransistorTO-2511. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High hFE hFE=60 to 200 low VCE(sat) VCE(sat)=0.6V MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2LSymbol Parameter Value UnitsVCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continu

isc Silicon NPN Power Transistor 2SC4007DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@ I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SA1634Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose a

isc Silicon NPN Power Transistor 2SC4003DESCRIPTIONHigh hFELow collector-to-emitter saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 400 VCBOV Collector-Emitter

isc Silicon NPN Power Transistor 2SC4001DESCRIPTIONThe 2SC4001is designed for uses of high-resolution monitorTV applications.This makes it possible to raise the video bandOf high-resolution monitor TVs to 50MHz.Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationFEATURESCollectorEmitter Sustaining Voltage-: V = 300 V(Min)CBOComplemen

isc Silicon NPN Power Transistor 2SC4008DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@ I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SA1635Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose a

isc Silicon NPN Power Transistor 2SC4004DESCRIPTION Collector-Base Breakdown Voltage-: V = 900V(Min.)(BR)CBOWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNIT