C400 - описание и поиск аналогов

DISCRETE SEMICONDUCTORS DATA SHEET PTC4001T NPN microwave power transistor 1997 Feb 18 Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 Philips Semiconductors Product specification NPN microwave power transistor PTC4001T FEATURES QUICK REFERENCE DATA Microwave performance up to Th =25 C in an oscillator circuit up to 3 GHz. Diffus

Ordering number EN2959A NPN Triple Diffused Planar Silicon Transistor 2SC4003 High-Voltage Driver Applications Features Package Dimensions High breakdown voltage. unit mm Adoption of MBIT process. 2045B Excellent hFE linearity. [2SC4003] 1 Base 2 Collector 3 Emitter 4 Collector SANYO TP unit mm 2044B [2SC4003] 1 Base 2 Collector 3 Emitter 4 Co

Ordering number EN2272A NPN Planar Type Silicon Darlington Transistor 2SC4006 Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit mm drivers, printer hammer drivers, relay drivers). 2041A [2SC4006] 4.5 10.0 Features 2.8 3.2 High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 50 8

Ordering number EN2960 NPN Triple Diffused Planar Silicon Transistor 2SC4002 High-Voltage Driver Applications Features Package Dimensions High breakdown voltage. unit mm Adoption of MBIT process. 2003B Excellent hFE linearity. [2SC4002] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 Emitter 2 Collector 3 Base 1 2 3 SANYO NP JEDEC TO-92 1.3 1.3 EIAJ SC-43 Spec

Ordering number EN2271A NPN Planar Type Silicon Darlington Transistor 2SC4005 Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit mm drivers, printer hammer drivers, relay drivers). 2041A [2SC4005] 4.5 10.0 Features 2.8 3.2 High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 50 8

This product complies with the RoHS Directive (EU 2002/95/EC). DSC4005 Silicon NPN epitaxial planar type For general amplification Complementary to DSA4005 DSC2005 in NS through hole type package Package Features Code High forward current transfer ratio hFE with excellent linearity NS-B2-B-B Low collector-emitter saturation voltage VCE(sat) Package dimension cli

This product complies with the RoHS Directive (EU 2002/95/EC). DSC4001 Silicon NPN epitaxial planar type For general amplification Complementary to DSA4001 DSC2001 in NS through hole type package Package Features Code High forward current transfer ratio hFE with excellent linearity NS-B2-B-B Low collector-emitter saturation voltage VCE(sat) Pin Name Con

This product complies with the RoHS Directive (EU 2002/95/EC). DSC4002 (Tentative) Silicon NPN epitaxial planar type For general amplification Packaging Package Radial type 5000 pcs / carton Code Absolute Maximum Ratings Ta = 25 C NS-B1-B Pin Name Parameter Symbol Rating Unit 1. Emitter Collector-base voltage (Emitter open) VCBO 60 V 2. Collector Collector

Power Transistors 2SC4004 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High-speed switching High collector to base voltage VCBO 3.1 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to th

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4004 DESCRIPTION With TO-220Fa package Satisfactory linearity of foward current transfer ratio hFE Wide area of safe operation (ASO) High-speed switching High collector to base voltage VCBO APPLICATIONS For high breakdown voltage high-speed switching PINNING PIN DESCRIPTION 1 Base 2 Collec

2SC4003(NPN) TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High hFE hFE=60 to 200 low VCE(sat) VCE(sat)=0.6V MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continu

JMTC4004A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 40V, 120A Load Switch R

isc Silicon NPN Power Transistor 2SC4007 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@ I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SA1634 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose a

isc Silicon NPN Power Transistor 2SC4003 DESCRIPTION High h FE Low collector-to-emitter saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 400 V CBO V Collector-Emitter

isc Silicon NPN Power Transistor 2SC4001 DESCRIPTION The 2SC4001is designed for uses of high-resolution monitor TV applications.This makes it possible to raise the video band Of high-resolution monitor TVs to 50MHz. Minimum Lot-to-Lot variations for robust device performance and reliable operation FEATURES Collector Emitter Sustaining Voltage- V = 300 V(Min) CBO Complemen

isc Silicon NPN Power Transistor 2SC4008 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@ I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SA1635 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose a

isc Silicon NPN Power Transistor 2SC4004 DESCRIPTION Collector-Base Breakdown Voltage- V = 900V(Min.) (BR)CBO Wide Area of Safe Operation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT