C407 Todos los transistores

 0.1. Size:47K  sanyo
 2sc4071.pdf

 0.2. Size:47K  sanyo
 2sa1574 2sc4070.pdf

 0.3. Size:73K  sanyo
 2sc4075.pdf

Ordering number EN2532 NPN Triple Diffused Planar Silicon Transistor 2SC4075 Color TV Chroma Output and Audio Output Applications Applications Package Dimensions Color TV chroma output, sound output and B/W TV unit mm video output, audio output applications. 2041A [2SC4075] 4.5 10.0 Features 2.8 3.2 Highly resistant to breakdown and wide ASO. Micaless package facili

 0.4. Size:301K  mcc
 ktc4075-bl-gr-y-o.pdf

KTC4075-O MCC KTC4075-Y Micro Commercial Components TM 20736 Marilla Street Chatsworth KTC4075-GR Micro Commercial Components CA 91311 Phone (818) 701-4933 KTC4075-BL Fax (818) 701-4939 Features NPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Complementary to KTA2014 Epoxy meets UL 94 V-0

 0.5. Size:414K  auk
 stc4073q.pdf

STC4073Q NPN Silicon Transistor Descriptions PIN Connection General purpose amplifier High voltage application Features High collector breakdown voltage VCEO = 120V Low collector saturation voltage VCE(sat)=0.5V(MAX.) SOT-223 Ordering Information Type No. Marking Package Code STC4073 STC4073Q SOT-223 YWW STC4073 DEVICE CODE, YWW(Y Year c

 0.6. Size:413K  auk
 stc4073d.pdf

STC4073D NPN Silicon Transistor Descriptions PIN Connection General purpose amplifier High voltage application Features High collector breakdown voltage VCEO = 120V Low collector saturation voltage VCE(sat)=0.5V(MAX.) TO-252 Ordering Information Type No. Marking Package Code STC4073D STC4073 TO-252 Year & Week Code Absolute maximum ra

 0.7. Size:408K  auk
 stc4073f.pdf

STC4073F NPN Silicon Transistor Descriptions PIN Connection General purpose amplifier High voltage application Features High collector breakdown voltage VCEO = 120V Low collector saturation voltage VCE(sat)=0.5V(MAX.) SOT-89 Green device and RoHS compliant device Available in full lead (Pb)-free device Ordering Information Type No.

 0.8. Size:715K  kec
 ktc4072e.pdf

SEMICONDUCTOR KTC4072E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. FEATURES High Current. Low VCE(sat). VCE(sat) 250mV at IC=200mA/IB=10mA. Complementary to KTA2012E. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 6 V IC 500 mA Collec

 0.9. Size:65K  kec
 ktc4075v.pdf

SEMICONDUCTOR KTC4075V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B Excellent hFE Linearity hFE(0.1mA)/hFE(2mA)=0.95(Typ.). DIM MILLIMETERS 2 _ High hFE hFE=70 700. A 1.2 +0.05 _ B 0.8 +0.05 Low Noise NF=1dB(Typ.), 10dB(Max.). 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 Complementary to KTA2014V. _ E

 0.10. Size:744K  kec
 ktc4075.pdf

SEMICONDUCTOR KTC4075 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEAUTRES M B M DIM MILLIMETERS Excellent hFE Linearity _ + A 2.00 0.20 D hFE(0.1mA)/hFE(2mA)=0.95(Typ.). 2 _ + B 1.25 0.15 _ High hFE hFE=70 700. + C 0.90 0.10 3 1 D 0.3+0.10/-0.05 Low Noise NF=1dB(Typ.), 10dB(Max.). _ + E 2.10 0.2

 0.11. Size:49K  kec
 krc407v-krc409v.pdf

SEMICONDUCTOR KRC407V KRC409V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B With Built-in Bias Resistors Simplify Circuit Design DIM MILLIMETERS 2 _ Reduce a Quantity of Parts and Manufacturing Process A 1.2 +0.05 _ B 0.8 +0.05 High Packing Density. 1 3 _ C 0.5 + 0.05 _ D 0.3 +

 0.12. Size:44K  kec
 ktc4079.pdf

SEMICONDUCTOR KTC4079 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. E FEATURE M B M DIM MILLIMETERS High Power Gain Gpe=29dB(Typ.) (f=10.7MHz) _ A + 2.00 0.20 D 2 _ + B 1.25 0.15 _ + C 0.90 0.10 3 1 D 0.3+0.10/-0.05 _ E + 2.10 0.20 G 0.65 MAXIMUM RATING (Ta=25 ) H 0.15+0.1/-0.06 J 1.30 CHARACT

 0.13. Size:33K  kec
 ktc4076.pdf

SEMICONDUCTOR KTC4076 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES M B M DIM MILLIMETERS Excellent hFE Linearity _ A + 2.00 0.20 D 2 hFE(2)=25(Min.) at VCE=6V, IC=400mA. _ + B 1.25 0.15 _ + C 0.90 0.10 Complementary to KTA2015. 3 1 D 0.3+0.10/-0.05 _ E + 2.10 0.20 G 0.65 H 0.15+0.1/-0.06 J 1.30

 0.14. Size:39K  kec
 ktc4074v.pdf

SEMICONDUCTOR KTC4074V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B Excellent hFE Linearity hFE(0.1mA)/hFE(2mA)=0.95(Typ.). DIM MILLIMETERS 2 _ High hFE hFE=120 400. A 1.2 +0.05 _ B 0.8 +0.05 Low Collector-to-Emitter Saturation Voltage. 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 Complementary to KTA2013V. _ E

 0.15. Size:636K  kec
 ktc4074f.pdf

SEMICONDUCTOR KTC4074F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E Excellent hFE Linearity B hFE(0.1mA)/hFE(2mA)=0.95(Typ.). High hFE hFE=120 400. Complementary to KTA2013F. DIM MILLIMETERS 2 _ A 0.6 + 0.05 Thin Fine Pitch Small Package. 3 _ + B 0.8 0.05 C 0.38+0.02/-0.04 1 _ + D 0.2 0.05 _ +

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 ktc4077.pdf

SEMICONDUCTOR KTC4077 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES E High Voltage VCEO=120V. M B M DIM MILLIMETERS Excellent hFE Linearity _ A + 2.00 0.20 D 2 hFE(0.1mA)/hFE(2mA)=0.95(Typ.). _ + B 1.25 0.15 _ + C 0.90 0.10 High hFE hFE=200 700. 3 1 D 0.3+0.10/-0.05 _ E + 2.10 0.20 Low Noise NF=1dB(Typ.),

 0.17. Size:65K  kec
 ktc4075e.pdf

SEMICONDUCTOR KTC4075E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B DIM MILLIMETERS Excellent hFE Linearity _ + A 1.60 0.10 D hFE(0.1mA)/hFE(2mA)=0.95(Typ.). _ + 2 B 0.85 0.10 _ + C 0.70 0.10 Low Noise NF=1dB(Typ.), 10dB(Max.). 3 1 D 0.27+0.10/-0.05 _ Complementary to KTA2014E. E 1.60 0.10 +

 0.18. Size:359K  kec
 ktc4072v.pdf

SEMICONDUCTOR KTC4072V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. FEATURES E High Current. B Low VCE(sat). VCE(sat) 250mV at IC=200mA/IB=10mA. DIM MILLIMETERS 2 _ Complementary to KTA2012V. A 1.2 +0.05 _ B 0.8 +0.05 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 _ E 1.2 + 0.05 _ G 0.8 0.05 + H 0.40 P P MAXIMUM RATING (Ta=25 ) _ J 0.12 + 0.05 _ K

 0.19. Size:63K  kec
 ktc4075f.pdf

SEMICONDUCTOR KTC4075F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E Excellent hFE Linearity B hFE(0.1mA)/hFE(2mA)=0.95(Typ.). High hFE hFE=70 700. Low Noise NF=1dB(Typ.), 10dB(Max.). DIM MILLIMETERS 2 _ A 0.6 + 0.05 Complementary to KTA2014F. 3 _ + B 0.8 0.05 C 0.38+0.02/-0.04 1 Thin Fine Pitc

 0.20. Size:390K  kec
 krc407e-krc409e.pdf

SEMICONDUCTOR KRC407E KRC409E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B DIM MILLIMETERS With Built-in Bias Resistors _ + A 1.60 0.10 D Simplify Circuit Design _ + 2 B 0.85 0.10 _ + C 0.70 0.10 Reduce a Quantity of Parts and Manufacturing Process 3 1 D 0.27+0.10/-0.05 _ H

 0.21. Size:393K  kec
 krc407-krc409.pdf

SEMICONDUCTOR KRC407 KRC409 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M DIM MILLIMETERS With Built-in Bias Resistors _ + A 2.00 0.20 D 2 _ Simplify Circuit Design B 1.25 0.15 + _ + C 0.90 0.10 3 Reduce a Quantity of Parts and Manufacturing Process 1 D 0.3+0.10/-0.05 _ +

 0.22. Size:25K  sanken-ele
 2sc4073.pdf

2SC4073 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4073 Unit Symbol Conditions 2SC4073 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 500 V VCB=500V 100max A ICBO

 0.23. Size:902K  htsemi
 ktc4075.pdf

KTC4075 TRANSISTOR (NPN) SOT-23 FEATURES 1. BASE 2. EMITTER 3. COLLECTOR Excellent hFE linearity High hFE Low Noise Complementary to KTA2014 MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage VCEO 50 V Collector-Emitter Voltage VEBO 5 V Emitter-Base Voltage IC Collector Current -Continuous 15

 0.24. Size:477K  htsemi
 ktc4076.pdf

KTC4076 TRANSISTOR (NPN) FEATURES Excellent hFE Linearity SOT 323 Complementary to KTA2015 APPLICATIONS General Purpose Switching 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 35 V CBO V Collector-Emitter Voltage 30 V CEO V Emitter-Base Voltage 5 V EBO I Coll

 0.25. Size:248K  lge
 ktc4075.pdf

KTC4075 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Excellent hFE linearity High hFE Low Noise Complementary to KTA2014 Dimensions in inches and (millimeters) MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage VCEO 50 V Collector-Emitter Voltage VEBO 5 V Emitter-Base Volta

 0.26. Size:647K  semtech
 st2sc4073u.pdf

ST 2SC4073U NPN Silicon Epitaxial Planar Transistor General purpose amplifier and high voltage application Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 120 V Collector Emitter Voltage VCEO 120 V Emitter Base Voltage VEBO 6 V Collector Current IC 1 A Peak Collector Current (Single pulse, tp = 300 s) ICP 2 A 0.5 Ptot W T

 0.27. Size:1437K  kexin
 ktc4075.pdf

SMD Type Transistors NPN Transistors KTC4075 Features Excellent hFE Linearity Low Noise Complementary to KTA2014 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 150 mA Bas

 0.28. Size:316K  kexin
 ktc4076.pdf

SMD Type Transistors NPN Transistors KTC4076 Features Excellent hFE Linearity Complementary to KTA2015 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 500 mA Base Current IB 50

 0.29. Size:206K  inchange semiconductor
 2sc4073.pdf

isc Silicon NPN Power Transistor 2SC4073 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-

 0.30. Size:216K  inchange semiconductor
 2sc4075.pdf

isc Silicon NPN Power Transistor 2SC4075 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV chroma output, sound output and B/W TV video output, audio output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a