C407 - описание и поиск аналогов

Ordering number EN2532 NPN Triple Diffused Planar Silicon Transistor 2SC4075 Color TV Chroma Output and Audio Output Applications Applications Package Dimensions Color TV chroma output, sound output and B/W TV unit mm video output, audio output applications. 2041A [2SC4075] 4.5 10.0 Features 2.8 3.2 Highly resistant to breakdown and wide ASO. Micaless package facili

KTC4075-O MCC KTC4075-Y Micro Commercial Components TM 20736 Marilla Street Chatsworth KTC4075-GR Micro Commercial Components CA 91311 Phone (818) 701-4933 KTC4075-BL Fax (818) 701-4939 Features NPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Complementary to KTA2014 Epoxy meets UL 94 V-0

STC4073Q NPN Silicon Transistor Descriptions PIN Connection General purpose amplifier High voltage application Features High collector breakdown voltage VCEO = 120V Low collector saturation voltage VCE(sat)=0.5V(MAX.) SOT-223 Ordering Information Type No. Marking Package Code STC4073 STC4073Q SOT-223 YWW STC4073 DEVICE CODE, YWW(Y Year c

STC4073D NPN Silicon Transistor Descriptions PIN Connection General purpose amplifier High voltage application Features High collector breakdown voltage VCEO = 120V Low collector saturation voltage VCE(sat)=0.5V(MAX.) TO-252 Ordering Information Type No. Marking Package Code STC4073D STC4073 TO-252 Year & Week Code Absolute maximum ra

STC4073F NPN Silicon Transistor Descriptions PIN Connection General purpose amplifier High voltage application Features High collector breakdown voltage VCEO = 120V Low collector saturation voltage VCE(sat)=0.5V(MAX.) SOT-89 Green device and RoHS compliant device Available in full lead (Pb)-free device Ordering Information Type No.

SEMICONDUCTOR KTC4072E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. FEATURES High Current. Low VCE(sat). VCE(sat) 250mV at IC=200mA/IB=10mA. Complementary to KTA2012E. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 6 V IC 500 mA Collec

SEMICONDUCTOR KTC4075V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B Excellent hFE Linearity hFE(0.1mA)/hFE(2mA)=0.95(Typ.). DIM MILLIMETERS 2 _ High hFE hFE=70 700. A 1.2 +0.05 _ B 0.8 +0.05 Low Noise NF=1dB(Typ.), 10dB(Max.). 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 Complementary to KTA2014V. _ E

SEMICONDUCTOR KTC4075 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEAUTRES M B M DIM MILLIMETERS Excellent hFE Linearity _ + A 2.00 0.20 D hFE(0.1mA)/hFE(2mA)=0.95(Typ.). 2 _ + B 1.25 0.15 _ High hFE hFE=70 700. + C 0.90 0.10 3 1 D 0.3+0.10/-0.05 Low Noise NF=1dB(Typ.), 10dB(Max.). _ + E 2.10 0.2

SEMICONDUCTOR KRC407V KRC409V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B With Built-in Bias Resistors Simplify Circuit Design DIM MILLIMETERS 2 _ Reduce a Quantity of Parts and Manufacturing Process A 1.2 +0.05 _ B 0.8 +0.05 High Packing Density. 1 3 _ C 0.5 + 0.05 _ D 0.3 +

SEMICONDUCTOR KTC4079 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. E FEATURE M B M DIM MILLIMETERS High Power Gain Gpe=29dB(Typ.) (f=10.7MHz) _ A + 2.00 0.20 D 2 _ + B 1.25 0.15 _ + C 0.90 0.10 3 1 D 0.3+0.10/-0.05 _ E + 2.10 0.20 G 0.65 MAXIMUM RATING (Ta=25 ) H 0.15+0.1/-0.06 J 1.30 CHARACT

SEMICONDUCTOR KTC4076 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES M B M DIM MILLIMETERS Excellent hFE Linearity _ A + 2.00 0.20 D 2 hFE(2)=25(Min.) at VCE=6V, IC=400mA. _ + B 1.25 0.15 _ + C 0.90 0.10 Complementary to KTA2015. 3 1 D 0.3+0.10/-0.05 _ E + 2.10 0.20 G 0.65 H 0.15+0.1/-0.06 J 1.30

SEMICONDUCTOR KTC4074V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B Excellent hFE Linearity hFE(0.1mA)/hFE(2mA)=0.95(Typ.). DIM MILLIMETERS 2 _ High hFE hFE=120 400. A 1.2 +0.05 _ B 0.8 +0.05 Low Collector-to-Emitter Saturation Voltage. 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 Complementary to KTA2013V. _ E

SEMICONDUCTOR KTC4074F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E Excellent hFE Linearity B hFE(0.1mA)/hFE(2mA)=0.95(Typ.). High hFE hFE=120 400. Complementary to KTA2013F. DIM MILLIMETERS 2 _ A 0.6 + 0.05 Thin Fine Pitch Small Package. 3 _ + B 0.8 0.05 C 0.38+0.02/-0.04 1 _ + D 0.2 0.05 _ +

SEMICONDUCTOR KTC4077 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES E High Voltage VCEO=120V. M B M DIM MILLIMETERS Excellent hFE Linearity _ A + 2.00 0.20 D 2 hFE(0.1mA)/hFE(2mA)=0.95(Typ.). _ + B 1.25 0.15 _ + C 0.90 0.10 High hFE hFE=200 700. 3 1 D 0.3+0.10/-0.05 _ E + 2.10 0.20 Low Noise NF=1dB(Typ.),

SEMICONDUCTOR KTC4075E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B DIM MILLIMETERS Excellent hFE Linearity _ + A 1.60 0.10 D hFE(0.1mA)/hFE(2mA)=0.95(Typ.). _ + 2 B 0.85 0.10 _ + C 0.70 0.10 Low Noise NF=1dB(Typ.), 10dB(Max.). 3 1 D 0.27+0.10/-0.05 _ Complementary to KTA2014E. E 1.60 0.10 +

SEMICONDUCTOR KTC4072V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. FEATURES E High Current. B Low VCE(sat). VCE(sat) 250mV at IC=200mA/IB=10mA. DIM MILLIMETERS 2 _ Complementary to KTA2012V. A 1.2 +0.05 _ B 0.8 +0.05 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 _ E 1.2 + 0.05 _ G 0.8 0.05 + H 0.40 P P MAXIMUM RATING (Ta=25 ) _ J 0.12 + 0.05 _ K

SEMICONDUCTOR KTC4075F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E Excellent hFE Linearity B hFE(0.1mA)/hFE(2mA)=0.95(Typ.). High hFE hFE=70 700. Low Noise NF=1dB(Typ.), 10dB(Max.). DIM MILLIMETERS 2 _ A 0.6 + 0.05 Complementary to KTA2014F. 3 _ + B 0.8 0.05 C 0.38+0.02/-0.04 1 Thin Fine Pitc

SEMICONDUCTOR KRC407E KRC409E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B DIM MILLIMETERS With Built-in Bias Resistors _ + A 1.60 0.10 D Simplify Circuit Design _ + 2 B 0.85 0.10 _ + C 0.70 0.10 Reduce a Quantity of Parts and Manufacturing Process 3 1 D 0.27+0.10/-0.05 _ H

SEMICONDUCTOR KRC407 KRC409 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M DIM MILLIMETERS With Built-in Bias Resistors _ + A 2.00 0.20 D 2 _ Simplify Circuit Design B 1.25 0.15 + _ + C 0.90 0.10 3 Reduce a Quantity of Parts and Manufacturing Process 1 D 0.3+0.10/-0.05 _ +

2SC4073 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC4073 Unit Symbol Conditions 2SC4073 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 500 V VCB=500V 100max A ICBO

KTC4075 TRANSISTOR (NPN) SOT-23 FEATURES 1. BASE 2. EMITTER 3. COLLECTOR Excellent hFE linearity High hFE Low Noise Complementary to KTA2014 MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage VCEO 50 V Collector-Emitter Voltage VEBO 5 V Emitter-Base Voltage IC Collector Current -Continuous 15

KTC4076 TRANSISTOR (NPN) FEATURES Excellent hFE Linearity SOT 323 Complementary to KTA2015 APPLICATIONS General Purpose Switching 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 35 V CBO V Collector-Emitter Voltage 30 V CEO V Emitter-Base Voltage 5 V EBO I Coll

KTC4075 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Excellent hFE linearity High hFE Low Noise Complementary to KTA2014 Dimensions in inches and (millimeters) MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage VCEO 50 V Collector-Emitter Voltage VEBO 5 V Emitter-Base Volta

ST 2SC4073U NPN Silicon Epitaxial Planar Transistor General purpose amplifier and high voltage application Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 120 V Collector Emitter Voltage VCEO 120 V Emitter Base Voltage VEBO 6 V Collector Current IC 1 A Peak Collector Current (Single pulse, tp = 300 s) ICP 2 A 0.5 Ptot W T

SMD Type Transistors NPN Transistors KTC4075 Features Excellent hFE Linearity Low Noise Complementary to KTA2014 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 150 mA Bas

SMD Type Transistors NPN Transistors KTC4076 Features Excellent hFE Linearity Complementary to KTA2015 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 500 mA Base Current IB 50

isc Silicon NPN Power Transistor 2SC4073 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-

isc Silicon NPN Power Transistor 2SC4075 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV chroma output, sound output and B/W TV video output, audio output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a