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 0.1. Size:124K  toshiba
 2sc4250fv.pdf

2SC4250FV TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4250FV TV VHF Mixer Applications Unit mm 1.2 0.05 Low reverse transfer capacitance Cre = 0.45 pF (typ.) 0.8 0.05 Absolute Maximum Ratings (Ta = 25 C) 1 Characteristic Symbol Rating Unit 2 3 Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 3 V Coll

 0.2. Size:301K  toshiba
 2sc4252.pdf

2SC4252 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4252 TV Tuner, VHF Oscillator Applications Unit mm (common collector) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V

 0.3. Size:296K  toshiba
 2sc4251.pdf

2SC4251 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4251 TV Tuner, VHF Oscillator Applications Unit mm Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 3 V Collector current IC 50 mA Base current IB 25 mA Collector power dissipation PC 100 mW Ju

 0.4. Size:347K  toshiba
 2sc4250.pdf

2SC4250 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4250 TV VHF Mixer Applications Unit mm High conversion gain Gce = 25dB (typ.) Low reverse transfer capacitance C = 0.45 pF (typ.) re Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO

 0.5. Size:303K  toshiba
 2sc4253.pdf

2SC4253 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4253 TV Final Picture IF Amplifier Applications Unit mm Good linearity of fT Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 4 V Collector current IC 50 mA Base current IB 25 mA Collector

 0.6. Size:81K  sanyo
 2sc4257.pdf

Ordering number EN2925A NPN Triple Diffused Planar Silicon Transistor 2SC4257 1200V/30mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage. unit mm Small Cob. 2010C Wide ASO. [2SC4257] High reliability (Adoption of HVP process). 10.2 4.5 3.6 5.1 1.3 1.2 1 Base 0.8 0.4 2 Collector 1 2 3 3 E

 0.7. Size:80K  sanyo
 2sc4256.pdf

Ordering number EN2924A NPN Triple Diffused Planar Silicon Transistor 2SC4256 1200V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage. unit mm Small Cob. 2010C Wide ASO. [2SC4256] High reliability (Adoption of HVP process). 10.2 4.5 3.6 5.1 1.3 1.2 0.8 1 Base 0.4 2 Collector 1 2 3 3 Em

 0.8. Size:371K  auk
 stc4250f.pdf

STC4250F NPN Silicon Transistor PIN Connection Applications Power amplifier application 4 High current switching application Features Low saturation voltage VCE(sat)=0.15V Typ. 1 2 @ IC=1A, IB=50mA 3 Large collector current capacity IC=2A SOT-89 Small and compact SMD type package Complementary pair with STA3250F Ordering Information T

 0.9. Size:323K  auk
 stc4250l.pdf

STC4250L NPN Silicon Transistor PIN Connection Applications Power amplifier application High current switching application Features High current IC=2A Complementary pair with STA3250L TO -92L 1 Emitter 2 Collector 3 Base Ordering Information Type NO. Marking Package Code STC4250 STC4250L TO-92L YWW HW2 DEVICE CODE, YWW(Y Year code, WW Week

 0.10. Size:314K  isahaya
 2sc4258.pdf

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better an

 0.11. Size:177K  inchange semiconductor
 2sc4252.pdf

 0.12. Size:178K  inchange semiconductor
 2sc4251.pdf

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4251 DESCRIPTION High f T- f = 1100 MHz TYP. T Low Output Capacitance- C = 0.9 pF TYP. OB 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV tuner ,VHF oscillator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

 0.13. Size:195K  inchange semiconductor
 2sc4250.pdf

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4250 DESCRIPTION High Conversion Gain- Gce = 25 dB TYP. Low Reverse Transfer Capacitance- Cre = 0.45 pF TYP. APPLICATIONS Designed for TV VHF mixer applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter