C425 Datasheet, Equivalent, Cross Reference Search
Type Designator: C425
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 70 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 75
Noise Figure, dB: -
Package: TO5
C425 Transistor Equivalent Substitute - Cross-Reference Search
C425 Datasheet (PDF)
2sc4250fv.pdf
2SC4250FV TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4250FV TV VHF Mixer Applications Unit: mm 1.20.05 Low reverse transfer capacitance: Cre = 0.45 pF (typ.) 0.80.05 Absolute Maximum Ratings (Ta = 25C) 1 Characteristic Symbol Rating Unit2 3 Collector-base voltage VCBO 30 VCollector-emitter voltage VCEO 20 VEmitter-base voltage VEBO 3 VColl
2sc4252.pdf
2SC4252 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4252 TV Tuner, VHF Oscillator Applications Unit: mm (common collector) Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 V
2sc4251.pdf
2SC4251 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4251 TV Tuner, VHF Oscillator Applications Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 15 VEmitter-base voltage VEBO 3 VCollector current IC 50 mABase current IB 25 mACollector power dissipation PC 100 mWJu
2sc4250.pdf
2SC4250 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4250 TV VHF Mixer Applications Unit: mm High conversion gain: Gce = 25dB (typ.) Low reverse transfer capacitance: C = 0.45 pF (typ.) reMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 20 VEmitter-base voltage VEBO
2sc4253.pdf
2SC4253 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4253 TV Final Picture IF Amplifier Applications Unit: mm Good linearity of fT Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 25 VEmitter-base voltage VEBO 4 VCollector current IC 50 mABase current IB 25 mACollector
2sc4257.pdf
Ordering number:EN2925ANPN Triple Diffused Planar Silicon Transistor2SC42571200V/30mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Small Cob.2010C Wide ASO.[2SC4257] High reliability (Adoption of HVP process).10.24.53.65.11.31.21 : Base0.80.42 : Collector1 2 33 : E
2sc4256.pdf
Ordering number:EN2924ANPN Triple Diffused Planar Silicon Transistor2SC42561200V/10mA High-Voltage Amplifier,High-Voltage Switching ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Small Cob.2010C Wide ASO.[2SC4256] High reliability (Adoption of HVP process).10.24.53.65.11.31.20.8 1 : Base0.42 : Collector1 2 33 : Em
stc4250f.pdf
STC4250FNPN Silicon TransistorPIN Connection Applications Power amplifier application 4 High current switching application Features Low saturation voltage: VCE(sat)=0.15V Typ. 1 2 @ IC=1A, IB=50mA 3 Large collector current capacity: IC=2A SOT-89 Small and compact SMD type package Complementary pair with STA3250F Ordering Information T
stc4250l.pdf
STC4250LNPN Silicon TransistorPIN Connection Applications Power amplifier application High current switching application Features High current : IC=2A Complementary pair with STA3250L TO -92L 1: Emitter 2 :Collector 3: Base Ordering Information Type NO. Marking Package Code STC4250 STC4250L TO-92L YWW HW2: DEVICE CODE, YWW(Y : Year code, WW : Week
2sc4258.pdf
ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better an
2sc4252.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4252DESCRIPTIONHigh Current-Gain Bandwidth Productf = 2.1 GHz TYP.TLow Output Capacitance-C = 1.1 pF TYP.OB100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV tuner ,VHF oscillator applications.ABSOLUTE MAXIMUM RATINGS(T =25
2sc4251.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4251DESCRIPTIONHigh fT-f = 1100 MHz TYP.TLow Output Capacitance-C = 0.9 pF TYP.OB100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV tuner ,VHF oscillator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
2sc4250.pdf
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4250 DESCRIPTION High Conversion Gain- Gce = 25 dB TYP. Low Reverse Transfer Capacitance- Cre = 0.45 pF TYP. APPLICATIONS Designed for TV VHF mixer applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .