C63 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC635/DHigh Current TransistorsBC635NPN SiliconBC637BC639COLLECTOR23BASE1EMITTER1MAXIMUM RATINGS23BC BC BC635 637 639Rating Symbol UnitCASE 2904, STYLE 14TO92 (TO226AA)CollectorEmitter Voltage VCEO 45 60 80 VdcCollectorBase Voltage VCBO 45 60 80 VdcEmitterBase Voltage

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC636/DHigh Current TransistorsBC636PNP SiliconBC638COLLECTORBC64023BASE1EMITTER1MAXIMUM RATINGS23BC BC BC636 638 640Rating Symbol UnitCASE 2904, STYLE 14TO92 (TO226AA)CollectorEmitter Voltage VCEO 45 60 80 VdcCollectorBase Voltage VCBO 45 60 80 VdcEmitt

PD- 96003BIRC630PbF Lead-Freewww.irf.com 12/10/05IRC630PbF2 www.irf.comIRC630PbFwww.irf.com 3IRC630PbF4 www.irf.comIRC630PbFwww.irf.com 5IRC630PbF6 www.irf.comIRC630PbFwww.irf.com 7IRC630PbF8 www.irf.comIRC630PbFHexsenseTO-220 5L Package Outline ( Dimensions are shown in millimeters (inches)Hexsense TO-220 5L Part Marking InformationEXAMP

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC635; BC637; BC639NPN medium power transistorsProduct specification 2001 Oct 10Supersedes data of 1999 Apr 23Philips Semiconductors Product specificationNPN medium power transistors BC635; BC637; BC639FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 base2 collectorAPPLIC

BC635; BCP54; BCX5445 V, 1 A NPN medium power transistorsRev. 07 4 June 2007 Product data sheet1. Product profile1.1 General descriptionNPN medium power transistor series.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBC635[2] SOT54 SC-43A TO-92 BC636BCP54 SOT223 SC-73 - BCP51BCX54 SOT89 SC-62 TO-243 BCX51[1] Valid for all available sele

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC635; BC637; BC639NPN medium power transistors1999 Apr 23Product specificationSupersedes data of 1997 Mar 12Philips Semiconductors Product specificationNPN medium power transistors BC635; BC637; BC639FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 base2 collectorAPPLI

BC637; BCP55; BCX5560 V, 1 A NPN medium power transistorsRev. 07 25 June 2007 Product data sheet1. Product profile1.1 General descriptionNPN medium power transistor series.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBC637[2] SOT54 SC-43A TO-92 BC638BCP55 SOT223 SC-73 - BCP52BCX55 SOT89 SC-62 TO-243 BCX52[1] Valid for all available sel

BC636; BCP51; BCX5145 V, 1 A PNP medium power transistorsRev. 08 22 February 2008 Product data sheet1. Product profile1.1 General descriptionPNP medium power transistor series.Table 1. Product overviewType number[1] Package NPN complementNXP JEITA JEDECBC636[2] SOT54 SC-43A TO-92 BC635BCP51 SOT223 SC-73 - BCP54BCX51 SOT89 SC-62 TO-243 BCX54[1] Valid for all available

BC639; BCP56; BCX5680 V, 1 A NPN medium power transistorsRev. 08 22 June 2007 Product data sheet1. Product profile1.1 General descriptionNPN medium power transistor series.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBC639[2] SOT54 SC-43A TO-92 BC640BCP56 SOT223 SC-73 - BCP53BCX56 SOT89 SC-62 TO-243 BCX53[1] Valid for all available sel

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC636; BC638; BC640PNP medium power transistors1999 Apr 23Product specificationSupersedes data of 1997 Mar 07Philips Semiconductors Product specificationPNP medium power transistors BC636; BC638; BC640FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 base2 collectorAPPLI

BC635SMALL SIGNAL NPN TRANSISTORPRELIMINARY DATAOrdering Code Marking Package / ShipmentBC635 BC635 TO-92 / BulkBC635-AP BC635 TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPNTRANSISTOR TO-92 PACKAGE SUITABLE FORTHROUGH-HOLE PCB ASSEMBLY THE PNP COMPLEMENTARY TYPE ISBC636TO-92 TO-92APPLICATIONS Bulk Ammopack WELL SUITABLE FOR TV AND HOMEAPPLIANCE EQUIPMENT SMA

BC636SMALL SIGNAL PNP TRANSISTORPRELIMINARY DATAOrdering Code Marking Package / ShipmentBC636 BC636 TO-92 / BulkBC636-AP BC636 TO-92 / Ammopack SILICON EPITAXIAL PLANAR PNPTRANSISTOR TO-92 PACKAGE SUITABLE FORTHROUGH-HOLE PCB ASSEMBLY THE NPN COMPLEMENTARY TYPE ISBC635TO-92 TO-92APPLICATIONS Bulk Ammopack WELL SUITABLE FOR TV AND HOMEAPPLIANCE EQUIPMENT SMA

June1996 NDC632P P-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese P-Channel logic level enhancement mode-2.7A, -20V. RDS(ON) = 0.14 @ VGS = -4.5Vpower field effect transistors are produced using RDS(ON) = 0.2 @ VGS = -2.7V.Fairchild's proprietary, high cell density, DMOStechnology. This very high density process is Propriet

BC635/637/639Switching and Amplifier Applications Complement to BC636/638/640TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCER Collector-Emitter Voltage at RBE=1K : BC635 45 V: BC637 60 V: BC639 100 VVCES Collector-Emitter Voltage : BC635 45 V: BC637 6

November 1999FDC637ANSingle N-Channel, 2.5V Specified PowerTrenchTM MOSFETGeneral DescriptionFeaturesThis N-Channel 2.5V specified MOSFET is produced 6.2 A, 20 V. RDS(on) = 0.024 @ VGS = 4.5 Vusing Fairchild Semiconductor's advancedPowerTrench process that has been especially tailored RDS(on) = 0.032 @ VGS = 2.5 Vto minimize on-state resistance and yet maintain lo

September 2001 FDC638P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P 2.5V specified MOSFET is produced -Channel 4.5 A, 20 V. R = 48 m @ V = 4.5 V DS(ON) GSusing Fairchild Semiconductors advanced R = 65 m @ V = 2.5 V DS(ON) GSPowerTrench process that has been especially tailored to minimize the on-state resistanc

March 1999 FDC6323LIntegrated Load Switch General Description FeaturesVDROP=0.2V @ VIN=5V, IL=1A, VON/OFF= 1.5V to 8VThese Integrated Load Switches are produced usingVDROP=0.3V @ VIN=3.3V, IL=1A, VON/OFF= 1.5V to 8V.Fairchild's proprietary, high cell density, DMOStechnology. This very high density process isHigh density cell design for extremely low on-resistance.especially

March 1999FDC6305NDual N-Channel 2.5V Specified PowerTrenchTM MOSFETGeneral Description Features 2.7 A, 20 V. RDS(ON) = 0.08 @ VGS = 4.5 VThese N-Channel low threshold 2.5V specifiedMOSFETs are produced using Fairchild Semiconductor'sRDS(ON) = 0.12 @ VGS = 2.5 Vadvanced PowerTrench process that has beenespecially tailored to minimize on-state resistance and Low

BC63916Switching and Amplifier ApplicationsTO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCER Collector-Emitter Voltage at RBE=1K 100 VVCES Collector-Emitter Voltage 100 VVCEO Collector-Emitter Voltage 80 VVEBO Emitter-Base Voltage 5 VIC Collector Current 1 AP

January 2001FDC6312PDual P-Channel 1.8V PowerTrench Specified MOSFETGeneral Description FeaturesThese P-Channel 1.8V specified MOSFETs are 2.3 A, 20 V. RDS(ON) = 115 m @ VGS = 4.5 Vproduced using Fairchild Semiconductor's advancedRDS(ON) = 155 m @ VGS = 2.5 VPowerTrench process that has been especially tailoredRDS(ON) = 225 m @ VGS =

February 1999FDC6306PDual P-Channel 2.5V Specified PowerTrench MOSFETFeaturesGeneral DescriptionThese P-Channel 2.5V specified MOSFETs are produced -1.9 A, -20 V. RDS(on) = 0.170 @ VGS = -4.5 Vusing Fairchild Semiconductor's advanced PowerTrenchRDS(on) = 0.250 @ VGS = -2.5 Vprocess that has been especially tailored to minimizeon-state resistance and yet maintain

April 2002 FDC6392S 20V Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features MOSFET: The FDC6392S combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a 2.2 A, 20V. RDS(ON) = 150 m @ VGS = 4.5V very low forward voltage drop Schottky barrier rectifier RDS(ON) = 200 m @ VGS

July 1997 FDC6304P Digital FET, Dual P-Channel General Description Features-25 V, -0.46 A continuous, -1.0 A Peak.These P-Channel enhancement mode field effect transistor areproduced using Fairchild's proprietary, high cell density, DMOS RDS(ON) = 1.5 @ VGS= -2.7 Vtechnology. This very high density process is tailored to minimizeRDS(ON) = 1.1 @ VGS = -4.5 V.on-state

December 2006FDC638APZP-Channel 2.5V PowerTrench Specified MOSFET 20V, 4.5A, 43mFeatures General Description Max rDS(on) = 43m at VGS = 4.5V, ID = 4.5AThis P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process Max rDS(on) = 68m at VGS = 2.5V, ID = 3.8Athat has been especially tailored to minim

October 1997 FDC6320C Dual N & P Channel , Digital FET General Description FeaturesThese dual N & P Channel logic level enhancement mode fieldN-Ch 25 V, 0.22 A, RDS(ON) = 5 @ VGS= 2.7 V.effec transistors are produced using Fairchild's proprietary,high cell density, DMOS technology. This very high density P-Ch 25 V, -0.12 A, RDS(ON) = 13 @ VGS= -2.7 V.process is especial

April 2001 FDC6310P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2.5V specified MOSFETs are 2.2 A, 20 V. R = 125 m @ V = 4.5 V DS(ON) GSproduced using Fairchild Semiconductor's advanced R = 190 m @ V = 2.5 V DS(ON) GSPowerTrench process that has been especially tailored to minimize on-state resistance

April 1999 FDC6321C Dual N & P Channel , Digital FET General Description FeaturesThese dual N & P Channel logic level enhancement modeN-Ch 25 V, 0.68 A, RDS(ON) = 0.45 @ VGS= 4.5 Vfield effect transistors are produced using Fairchild'sproprietary, high cell density, DMOS technology. This very P-Ch -25 V, -0.46 A, RDS(ON) = 1.1 @ VGS= -4.5 V.high density process is especi

October 1997 FDC6302P Digital FET, Dual P-Channel General Description FeaturesThese Dual P-Channel logic level enhancement mode field effect -25 V, -0.12 A continuous, -0.5 A Peak.transistors are produced using Fairchild's proprietary, high cell RDS(ON) = 13 @ VGS= -2.7 Vdensity, DMOS technology. This very high density process is RDS(ON) = 10 @ VGS = -4.5 V.especially

September 2001 FDC634P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses 3.5 A, 20 V. R = 80 m @ V = 4.5 V DS(ON) GSFairchilds low voltage PowerTrench process. It has R = 110 m @ V = 2.5 V DS(ON) GSbeen optimized for battery power management applications. Low gate charge (7.2 n

October 2001FDC6333C30V N & P-Channel PowerTrench MOSFETsGeneral Description FeaturesThese N & P-Channel MOSFETs are produced using Q1 2.5 A, 30V. RDS(ON) = 95 m @ VGS = 10 VFairchild Semiconductors advanced PowerTrenchRDS(ON) = 150 m @ VGS = 4.5 Vprocess that has been especially tailored to minimizeon-state resistance and yet maintain superior Q2 2

BC636/638/640Switching and Amplifier Applications Complement to BC635/637/639TO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCER Collector-Emitter Voltage at RBE=1K : BC636 -45 V: BC638 -60 V: BC640 -100 VVCES Collector-Emitter Voltage : BC636 -45 V: BC6

November 1998 FDC6329LIntegrated Load Switch General Description FeaturesThis device is particularly suited for compact powerVDROP=0.2V @ VIN=5V, IL=2.8A. R(ON) = 0.07 VDROP=0.2Vmanagement in portable electronic equipment where@ VIN=2.5V, IL=1.9A. R(ON) = 0.105.2.5V to 8V input and 2.5A output current capability areneeded. This load switch integrates a small N-Channel

September 2001 FDC6301N Dual N-Channel , Digital FETGeneral Description Features25 V, 0.22 A continuous, 0.5 A Peak.These dual N-Channel logic level enhancement mode fieldeffect transistors are produced using Fairchild 's proprietary, RDS(ON) = 5 @ VGS= 2.7 Vhigh cell density, DMOS technology. This very high densityRDS(ON) = 4 @ VGS= 4.5 V.process is especially tailo

July 1999FDC6308PDual P-Channel 2.5V Specified PowerTrenchTM MOSFETGeneral Description FeaturesThis P-Channel 2.5V specified MOSFET is a rugged -1.7 A, -18 V. RDS(ON) = 0.18 @ VGS = -4.5 Vgate version of Fairchild Semiconductor's advancedRDS(ON) = 0.30 @ VGS = -2.5 VPowerTrench process. It has been optimized for powermanagement applications with a wide range of gate

July 2000FDC6327CDual N & P-Channel 2.5V Specified PowerTrenchTM MOSFETFeaturesGeneral DescriptionThese N & P-Channel 2.5V specified MOSFETs are N-Channel 2.7A, 20V. RDS(on) = 0.08 @ VGS = 4.5Vproduced using Fairchild Semiconductor's advancedRDS(on) = 0.12 @ VGS = 2.5VPowerTrench process that has been especially tailoredto minimize on-state resistance and yet mainta

March 1998 FDC633N N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThis N-Channel enhancement mode power field effect5.2 A, 30 V. RDS(ON) = 0.042 @ VGS = 4.5 Vtransistors is produced using Fairchild's proprietary, high cellRDS(ON) = 0.054 @ VGS = 2.5 V.density, DMOS technology. This very high density process istailored to minimize on-stat

December 2001 FDC6318P Dual P-Channel 1.8V PowerTrench Specified MOSFET General Description Features These P-Channel 1.8V specified MOSFETs are 2.5 A, 12 V. RDS(ON) = 90 m @ VGS = 4.5 V produced using Fairchild Semiconductor's advanced RDS(ON) = 125 m @ VGS = 2.5 V PowerTrench process that has been especially tailored RDS(ON) = 200 m

August 1997 FDC6303N Digital FET, Dual N-ChannelGeneral Description Features25 V, 0.68 A continuous, 2 A Peak.These dual N-Channel logic level enhancement mode fieldRDS(ON) = 0.6 @ VGS = 2.7 Veffect transistors are produced using Fairchild's proprietary,high cell density, DMOS technology. This very high density RDS(ON) = 0.45 @ VGS= 4.5 V.process is especially tailored

May 1998 FDC636P P-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese P-Channel logic level enhancement mode power-2.8 A, -20 V. RDS(ON) = 0.130 @ VGS = -4.5 Vfield effect transistors are produced using Fairchild's RDS(ON) = 0.180 @ VGS = -2.5 V.proprietary, high cell density, DMOS technology. This veryhigh density process is

March 2009BC638PNP Epitaxial Silicon TransistorSwitching and Amplifier Applications Complement to BC637TO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCER Collector-Emitter Voltage at RBE=1K -60 VVCES Collector-Emitter Voltage -60 VVCEO Collector-Emitter Voltage -60 VVEBO Emitter-Base Volt

March 1999 FDC6324LIntegrated Load Switch General Description FeaturesThese Integrated Load Switches are produced using Fairchild's VDROP=0.2V @ VIN=12V, IL=1A, VON/OFF=1.5 to 8V proprietary, high cell density, DMOS technology. This very highVDROP=0.3V @ VIN=5V, IL=1A, VON/OFF=1.5 to 8V.density process is especially tailored to minimize on-stateHigh density cell design for extr

September 2007FDC637BNZtmN-Channel 2.5V Specified PowerTrench MOSFET 20V, 6.2A, 24mFeatures General Description Max rDS(on) = 24m at VGS = 4.5V, ID = 6.2A This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process Max rDS(on) = 32m at VGS = 2.5V, ID = 5.2Athat has been especially tailored to minimize the on-sta

March 2009BC636PNP Epitaxial Silicon TransistorSwitching and Amplifier Applications Complement to BC635TO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCER Collector-Emitter Voltage at RBE=1K -45 VVCES Collector-Emitter Voltage -45 VVCEO Collector-Emitter Voltage -45 VVEBO Emitter-Base Volt

BC636/638/640 PNP EPITAXIAL SILICON TRANSISTORSWITCHING AND AMPLIFIER APPLICATIONS Complement to BC635/637/639TO-92ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector Emitter Voltage :BC636 VCER -45 Vat RBE=1Kohm :BC638 -60 V:BC640 -100 VCollector Emitter Voltage :BC636 VCES -45 V:BC638 -60 V:BC640 -100 VCollector Emitter Voltage :BC636 VCE

DATA SHEETwww.onsemi.comPNP Epitaxial SiliconTransistorTO-92-3BC636CASE 135ARBent Lead12Features3 Switching and Amplifier Applications1. Emitter Complement to BC6352. Collector These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3. BaseCompliantMARKING DIAGRAMABSOLUTE MAXIMUM RATINGS (Values are at TA = 25C unless otherwise noted)P

BC637, BC639, BC639-16High Current TransistorsNPN SiliconFeatures These are Pb-Free Devices* http://onsemi.comCOLLECTOR2MAXIMUM RATINGS3Rating Symbol Value UnitBASECollector - Emitter Voltage VCEO VdcBC637 601BC639 80EMITTERCollector - Base Voltage VCBO VdcBC637 60BC639 80Emitter - Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 1.0 AdcTO-

FDC637ANSingle N-Channel, 2.5V Specified PowerTrenchTM MOSFETGeneral DescriptionFeaturesThis N-Channel 2.5V specified MOSFET is produced 6.2 A, 20 V. RDS(on) = 0.024 @ VGS = 4.5 Vusing ON Semiconductor's advanced PowerTrench process that has been especially tailored RDS(on) = 0.032 @ VGS = 2.5 Vto minimize on-state resistance and yet maintain low gate charge for

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

NVMFS5C638NLMOSFET Power, SingleN-Channel60 V, 3.0 mW, 133 AFeatureswww.onsemi.com Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVMFS5C638NLWF - Wettable Flank Option for Enhanced Optical3.0 mW @ 10 VInspection60 V 133 A AEC-Q101 Qua

BC63916NPN Epitaxial Silicon TransistorFeatures Switching and Amplifier ApplicationsTO-921. Emitter2. Collector1 13. Base2233Straight Lead Bent LeadBulk Packing Tape & Reel Ammo PackingOrdering InformationPart Number Top Mark Package Packing MethodBC63916-D74Z BC639-16 TO-92 3L AmmoBC63916-D27Z BC639-16 TO-92 3L Tape and ReelAbsolute Maximum Ratings(1)

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

NVD5C632NLPower MOSFET60 V, 2.5 mW, 155 A, Single N-ChannelFeatures Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losseswww.onsemi.com AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(on) ID2.5 mW @ 10 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted

FDC6321CDual N & P Channel , Digital FET FeaturesN-Ch 25 V, 0.68 A, RDS(ON) = 0.45 @ VGS= 4.5 VGeneral DescriptionP-Ch -25 V, -0.46 A, RDS(ON) = 1.1 @ VGS= -4.5 V.These dual N & P Channel logic level enhancement mode Very low level gate drive requirements allowing directfield effect transistors are produced using ON operation in 3 V circuits. VGS(th)

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

BC637, BC639, BC639-16High Current TransistorsNPN SiliconFeatures These are Pb-Free Devices* http://onsemi.comCOLLECTOR2MAXIMUM RATINGS3Rating Symbol Value UnitBASECollector - Emitter Voltage VCEO VdcBC637 601BC639 80EMITTERCollector - Base Voltage VCBO VdcBC637 60BC639 80Emitter - Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 1.0 AdcTO-

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

BC637, BC639, BC639-16High Current TransistorsNPN SiliconFeatures These are Pb-Free Devices* http://onsemi.comCOLLECTOR2MAXIMUM RATINGS3Rating Symbol Value UnitBASECollector - Emitter Voltage VCEO VdcBC637 601BC639 80EMITTERCollector - Base Voltage VCBO VdcBC637 60BC639 80Emitter - Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 1.0 AdcTO-

FDC6301N Dual N-Channel , Digital FET FeaturesGeneral Description25 V, 0.22 A continuous, 0.5 A Peak.These dual N-Channel logic level enhancement mode field RDS(ON) = 5 @ VGS= 2.7 Veffect transistors are produced using ON Semiconductor 's RDS(ON) = 4 @ VGS= 4.5 V.proprietary, high cell density, DMOS technology. This very high density process is especially tailored to

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

September 2007FDC637BNZtmN-Channel 2.5V Specified PowerTrench MOSFET 20V, 6.2A, 24mFeatures General Description Max rDS(on) = 24m at VGS = 4.5V, ID = 6.2A This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process Max rDS(on) = 32m at VGS = 2.5V, ID = 5.2Athat has been especially tailored to minimize the on-sta

Supertex inc. TC6320N- and P-ChannelEnhancement-Mode MOSFET PairFeatures General Description Integrated GATE-to-SOURCE resistor The Supertex TC6320 consists of high voltage, low threshold N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN Integrated GATE-to-SOURCE Zener diodepackages. Both MOSFETs have integrated GATE-to-SOURCE Low thresholdresistors and GATE-to

BC635 / BC637 / BC639NPN TypeElektronische BauelementePlastic Encapsulated TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeTO-92 FEATURE 4.550.2 3.50.2High current transistor080.43+0.070.10.46+0.10.(1.27 Typ.)1: Emitter+0.21.250.21 2 32: Collector2.540.13: BaseoMAXIMUM RATINGS (TA=25 C unless otherw

BC636/638/640 PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeTO-92FEATURE4.550.2 3.50.2Power Dissipation: oPCM: 0.83 mW (Tamb=25 C)080.43+0.070.10.46+0.10.(1.27 Typ.)1: Emitter+0.21.250.21 2 32: Collector2.540.13: BaseoMAXIMUM RATINGS (TA

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPNBC636, 638, 640 PNPTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"BCEHigh Current TransistorABSOLUTE MAXIMUM RATINGS (Ta=25C)BC635 BC637 BC639DESCRIPTION SYMBOLBC636 BC638 BC640 UNITVCE

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsTO-92 BC635 / BC637 / BC639 TRANSISTOR (NPN)1. EMITTERFEATURES High current transistors 2. COLLECTOR 3. BASEBC635 BC637 BC639 XXX XXX XXXEquivalent Circuit 1 1 1BC635,BC637,BC639=Device code Solid dot=Green molding compound device, if none,the normal deviceXXX=Code

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsBC636 / BC638 / BC640 TRANSISTOR (PNP)TO-92 FEATURES High current transistors 1. EMITTER 2. COLLECTORBC636 BC638 BC6403. BASE XXX XXX XXX1 1 1Equivalent Circuit BC636,BC638,BC640=Device code Solid dot=Green molding compound device, if none,the normal deviceXXX=Co

SEMICONDUCTOR BC637TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT TRANSISTORS.B CFEATURESComplementary to BC638.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDMAXIMUM RATING (Ta=25 )D 0.45E 1.00CHARACTERISTIC SYMBOL RATING UNIT F 1.27G 0.85H 0.45VCBOCollector-Base Voltage 60 V_HJ 14.00 + 0.50K 0.55 MAXVCEO F FCollector-Emitte

SEMICONDUCTOR BC638TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT TRANSISTORS.B CFEATURESComplementary to BC637.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDMAXIMUM RATING (Ta=25 )D 0.45E 1.00CHARACTERISTIC SYMBOL RATING UNIT F 1.27G 0.85H 0.45VCBO -60 VCollector-Base Voltage_HJ 14.00 + 0.50K 0.55 MAXF FVCEO -60 VCollecto

BC635/637/639(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High current transistors Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Emitter Voltage BC635 45 V BC637 60 V BC639 100 VVCEO Collector-Emitter Voltage BC635 45 V BC637 60 V BC639 80 V

BC636/BC638/BC640 Transistor(PNP) 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features High current transistors MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage BC636 -45 BC638 -60 V BC640 -100 VCEO Collector-Emitter Voltage BC636 -45 BC638 -60 V BC640 -80 Dimensions in inches and (millimeters)VEBO Emitter-

AFC6332 Alfa-MOS 20V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC6332, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 20V/1.0A,RDS(ON)=280m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 20V/0.8A,RDS(ON)=340m@VGS=2.5V These devices are particularly suited for low 20V/0.7A,RDS(ON)=580m@VGS=

3CA638(BC638) PNP Ptot TC75 1.5 W ICM 1.0 A Tjm 150 Tstg -55~150 V(BR)CBO ICB=0.1mA 60 V V(BR)CEO ICE=10mA 60 V V(BR)EBO IEB=10A 5.0 V ICBO VCB=30V 0.1 A IEBO VEB=4V 0.1 A IC=0.5A VCEsat 0.5 V IB=0.05A VCE=2V hFE 63~25

STC6301D N&P Pair Enhancement Mode MOSFET 23.0A / -18.0A DESCRIPTION The STC6301D is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage applicati

STC6332STC6332STC6332STC6332N&P Pair Enhancement Mode MOSFET0.95A / -1ADESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTIONThe STC6332 is the N & P-Channel enhancement mode power field effect transistorusing high cell density DMOS trench technology. This high density process isespecially tailored to minimize on-state resistance and provide superior switchingperformance. This d

SPC6332 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC6332 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

FDC637ANwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS DC/DC

FDC638Pwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-Cha

FDC6305Nwww.VBsemi.twDual N-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.022 at VGS = 4.5 V TrenchFET Power MOSFET6.020 1.8 nC 100 % Rg Tested0.028 at VGS = 2.5 V 5.0 Compliant to RoHS Directive 2002/95/ECTSOP-6 D1 D 2 D Top View G1 D1 1 6 G 1

FDC6312Pwww.VBsemi.twDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.075 at VGS = - 4.5V - 4.0 TrenchFET Power MOSFET- 20 2.7 nC0.100 at VGS = - 2.5 V - 3.2 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable Ap

FDC6321Cwww.VBsemi.twN- and P-Channel 2 V (D-S) MOSFET0 FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFETN-Channel 200.036 at VGS = 4.5 V 4.2 100 % Rg Tested0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/ECP-Channel - 200.083 at V

FDC6327Cwww.VBsemi.twN- and P-Channel 2 V (D-S) MOSFET0 FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = 10 V 5.5 TrenchFET Power MOSFETN-Channel 200.036 at VGS = 4.5 V 4.2 100 % Rg Tested0.069 at VGS = - 10 V - 3.4 Compliant to RoHS Directive 2002/95/ECP-Channel - 200.083 at V

FDC637BNZwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTSOP-6APPLICATIONS DC/DC

FC6357NPN FC6357 NPN SOT-89 VHFUHF CATV

FC6356 NPN Guo Xin Jia Pin SEMICONDUTORFC6356 NPN SC59 VHFUHF CATV