C651 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: C651
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.8 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 35 V
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 300 MHz
Capacitancia de salida (Cc): 7 pF
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta: TO39
Búsqueda de reemplazo de transistor bipolar C651
C651 Datasheet (PDF)
ndc651n.pdf
March 1996 NDC651N N-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese N-Channel logic level enhancement mode power field3.2A, 30V. RDS(ON) = 0.09 @ VGS = 4.5Veffect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.06 @ VGS = 10V.high cell density, DMOS technology. This very high densityprocess is tailored t
krc651u-krc656u.pdf
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krc651f-krc654f.pdf
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krc651e-krc656e.pdf
SEMICONDUCTOR KRC651E~KRC656ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias Resistors.Simplify Circuit Design.1 5 DIM MILLIMETERS_A 1.6 0.05+Reduce a Quantity of Parts and Manufacturing Process._+A1 1.0 0.052_+B 1.6 0.05High Packing Density._
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: CD3285 | CSC1008G | LMBT2222ATT3G | SF122 | RN2302 | 2SA1015 | 40320S
History: CD3285 | CSC1008G | LMBT2222ATT3G | SF122 | RN2302 | 2SA1015 | 40320S
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050