C651 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: C651
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.8 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 35 V
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 300 MHz
Capacitancia de salida (Cc): 7 pF
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta: TO39
Búsqueda de reemplazo de transistor bipolar C651
C651 Datasheet (PDF)
ndc651n.pdf
March 1996 NDC651N N-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese N-Channel logic level enhancement mode power field3.2A, 30V. RDS(ON) = 0.09 @ VGS = 4.5Veffect transistors are produced using Fairchild's proprietary, RDS(ON) = 0.06 @ VGS = 10V.high cell density, DMOS technology. This very high densityprocess is tailored t
krc651u-krc656u.pdf
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krc651f-krc654f.pdf
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krc651e-krc656e.pdf
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Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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