CA3081M Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CA3081M  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.75 W

Tensión colector-emisor (Vce): 16 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 30

Encapsulados: PLCC20

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CA3081M datasheet

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CA3081M

CA3081, CA3082 S E M I C O N D U C T O R General Purpose High Current N-P-N Transistor Arrays May 1994 March 1993 Features Description CA3081 - Common Emitter Array CA3081 and CA3082 consist of seven high current (to 100mA) silicon n-p-n transistors on a common monolithic substrate. The CA3082 - Common Collector Array CA3081 is connected in a common emitter configuration and t

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CA3081M

S E M I C O N D U C T O R CA3086 General Purpose N-P-N Transistor Array March 1993 Applications Description Three Isolated Transistors and One Differentially Con- The CA3086 consists of five general-purpose silicon n-p-n nected Transistor Pair For Low-Power Applications transistors on a common monolithic substrate. Two of the from DC to 120 MHz transistors are internally connected to

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CA3081M

S E M I C O N D U C T O R CA3083 General Purpose High Current N-P-N Transistor Array March 1993 Features Description High IC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Max The CA3083 is a versatile array of five high current (to 100mA) n-p-n transistors on a common monolithic substrate. Low VCE sat (at 50mA) . . . . . . . . . . . . . . . . . . . 0.7V Max In

Otros transistores... C962, C972, C982, CA3081, CA3081EX, CA3081F, CA3081F-3, CA3081FX, TIP2955, CA3082, CA3082F, CA3082M, CA3250E, CA3250F, CA3251E, CA3251F, CB1F4