CA3081M Datasheet, Equivalent, Cross Reference Search
Type Designator: CA3081M
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Emitter Voltage |Vce|: 16 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: PLCC20
CA3081M Transistor Equivalent Substitute - Cross-Reference Search
CA3081M Datasheet (PDF)
ca3081.pdf
CA3081, CA3082S E M I C O N D U C T O RGeneral Purpose High CurrentN-P-N Transistor ArraysMay 1994March 1993Features Description CA3081 - Common Emitter Array CA3081 and CA3082 consist of seven high current (to 100mA)silicon n-p-n transistors on a common monolithic substrate. The CA3082 - Common Collector ArrayCA3081 is connected in a common emitter configuration and t
ca3086.pdf
S E M I C O N D U C T O R CA3086General Purpose N-P-NTransistor ArrayMarch 1993Applications Description Three Isolated Transistors and One Differentially Con- The CA3086 consists of five general-purpose silicon n-p-nnected Transistor Pair For Low-Power Applications transistors on a common monolithic substrate. Two of thefrom DC to 120 MHz transistors are internally connected to
ca3083.pdf
S E M I C O N D U C T O R CA3083General Purpose High CurrentN-P-N Transistor ArrayMarch 1993Features Description High IC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Max The CA3083 is a versatile array of five high current (to100mA) n-p-n transistors on a common monolithic substrate. Low VCE sat (at 50mA) . . . . . . . . . . . . . . . . . . . 0.7V MaxIn
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
