CMPT3019 Todos los transistores

 

CMPT3019 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CMPT3019

Código: C3A

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.35 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 100 MHz

Capacitancia de salida (Cc): 12 pF

Ganancia de corriente contínua (hfe): 100

Empaquetado / Estuche: SOT23

Búsqueda de reemplazo de transistor bipolar CMPT3019

 

CMPT3019 Datasheet (PDF)

5.1. cmpt3904e cmpt3906e.pdf Size:330K _central

CMPT3019
CMPT3019

CMPT3904E NPN CMPT3906E PNP www.centralsemi.com ENHANCED SPECIFICATION DESCRIPTION: SURFACE MOUNT COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMPT3904E and SILICON TRANSISTORS CMPT3906E are Enhanced versions of the CMPT3904 and CMPT3906 complementary switching transistors in a SOT-23 surface mount package, designed for small signal switching applications, interface circuit & driver

5.2. cmpt3906e.pdf Size:330K _central

CMPT3019
CMPT3019

CMPT3904E NPN CMPT3906E PNP www.centralsemi.com ENHANCED SPECIFICATION DESCRIPTION: SURFACE MOUNT COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMPT3904E and SILICON TRANSISTORS CMPT3906E are Enhanced versions of the CMPT3904 and CMPT3906 complementary switching transistors in a SOT-23 surface mount package, designed for small signal switching applications, interface circuit & driver

 5.3. cmpt3410.pdf Size:387K _central

CMPT3019
CMPT3019

CMPT3410 www.centralsemi.com SURFACE MOUNT LOW VCE(SAT) DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT3410 type is a NPN Low VCE(SAT) silicon transistor manufactured by the epitaxial planar process and epoxy molded in an SOT-23 surface mount package. This device is designed for battery driven, handheld devices requiring high current and Low VCE(SAT). MARKING

5.4. cmpt3904e.pdf Size:330K _central

CMPT3019
CMPT3019

CMPT3904E NPN CMPT3906E PNP www.centralsemi.com ENHANCED SPECIFICATION DESCRIPTION: SURFACE MOUNT COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMPT3904E and SILICON TRANSISTORS CMPT3906E are Enhanced versions of the CMPT3904 and CMPT3906 complementary switching transistors in a SOT-23 surface mount package, designed for small signal switching applications, interface circuit & driver

 5.5. cmpt3820.pdf Size:325K _central

CMPT3019
CMPT3019

CMPT3820 www.centralsemi.com SURFACE MOUNT VERY LOW VCE(SAT) DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT3820 is a very low VCE(SAT) NPN Transistor, designed for applications where size and efficiency are prime requirements. Packaged in an industry standard SOT-23, this device brings updated electrical specifications and characteristics suitable for the most

5.6. cmpt3904 cmpt3906.pdf Size:326K _central

CMPT3019
CMPT3019

CMPT3904 CMPT3904G* NPN CMPT3906 CMPT3906G* PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION: COMPLEMENTARY These CENTRAL SEMICONDUCTOR devices are SILICON TRANSISTORS complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose amplifier and switching applications. MARKING COD

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