CMPT918 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CMPT918  📄📄 

Código: C3B

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.35 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 15 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 0.01 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 600 MHz

Capacitancia de salida (Cc): 1.7 pF

Ganancia de corriente contínua (hFE): 20

Encapsulados: SOT23

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CMPT918 datasheet

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CMPT918

CMPT918 www.centralsemi.com SURFACE MOUNT NPN SILICON DESCRIPTION RF TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT918 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high frequency (VHF/UHF) amplifier and oscillator applications. MARKING CODE C3B SOT-23 CASE MAXIMUM RATINGS (TA=25 C) SYMB

 9.1. Size:323K  central
 cmpt992p.pdf pdf_icon

CMPT918

CMPT992 CMPT992P CMPT992F www.centralsemi.com CMPT992E DESCRIPTION SURFACE MOUNT PNP LOW NOISE The CENTRAL SEMICONDUCTOR CMPT992 types SILICON TRANSISTOR are PNP silicon low noise transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise amplifier applications where a high BVCEO is required. MARKING CODE SEE MAR

 9.2. Size:323K  central
 cmpt992.pdf pdf_icon

CMPT918

CMPT992 CMPT992P CMPT992F www.centralsemi.com CMPT992E DESCRIPTION SURFACE MOUNT PNP LOW NOISE The CENTRAL SEMICONDUCTOR CMPT992 types SILICON TRANSISTOR are PNP silicon low noise transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise amplifier applications where a high BVCEO is required. MARKING CODE SEE MAR

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