CP801 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CP801
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1.5 A
   Temperatura operativa máxima (Tj): 100 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 5 MHz
   Capacitancia de salida (Cc): 20 pF
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO5

Búsqueda de reemplazo de transistor bipolar CP801

CP801 Datasheet (PDF)

0.1. Size:228K toshiba
tpcp8013.pdf

TPCP8013MOSFETs Silicon N-channel MOS (U-MOS)TPCP8013TPCP8013TPCP8013TPCP80131. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipment2. Features2. Features2. Features2. Features(1) Small, thin package(2) Small gate charge : QSW = 4.5 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 41.5 m (typ.) (VGS = 10 V

0.2. Size:237K toshiba
tpcp8010.pdf

TPCP8010MOSFETs Silicon N-channel MOS (U-MOS)TPCP8010TPCP8010TPCP8010TPCP80101. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipment2. Features2. Features2. Features2. Features(1) Small, thin package(2) Small gate charge : QSW = 4.9 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 19.1 m (typ.) (VGS = 10 V

0.3. Size:231K toshiba
tpcp8011.pdf

TPCP8011MOSFETs Silicon N-channel MOS (U-MOS)TPCP8011TPCP8011TPCP8011TPCP80111. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipment2. Features2. Features2. Features2. Features(1) Small, thin package(2) Small gate charge : QSW = 4.7 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 25.5 m (typ.) (VGS = 10 V

0.4. Size:224K toshiba
tpcp8012.pdf

TPCP8012MOSFETs Silicon N-channel MOS (U-MOS)TPCP8012TPCP8012TPCP8012TPCP80121. Applications1. Applications1. Applications1. Applications Motor Drivers Mobile Equipment2. Features2. Features2. Features2. Features(1) Small, thin package(2) Small gate charge : QSW = 10 nC (typ.)(3) Low drain-source on-resistance: RDS(ON) = 16.2 m (typ.) (VGS = 10 V)

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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