CS1506G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CS1506G
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 8 pF
   Ganancia de corriente contínua (hfe): 120

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CS1506G Datasheet (PDF)

9.1. Size:1090K blue-rocket-elect
brcs150p04sc.pdf

BRCS150P04SCRev.A May.-2020 DATA SHEET / DescriptionsSOP-8 P P-Channel Enhancement Mode Field Effect Transistor in a SOP-8 Plastic Package. / FeaturesV (V) = -40VDSI = -10 A (V =20V)D GSR

9.2. Size:1071K blue-rocket-elect
brcs150n12sra.pdf

BRCS150N12SRA Rev.A Feb.-2022 DATA SHEET / Descriptions TO-220 N N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , Ultra Low On-Resistance,fast switching. / Applications PFC These d

9.3. Size:1720K blue-rocket-elect
brcs150n10sbd.pdf

BRCS150N10SBD Rev.A Jun.-2023 DATA SHEET / Descriptions TO-263 N N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features V =100V ; I =46A DS DRDSON@10V15m(Type.14.8m) RDSON@4.5V25m(Type.20.4m) HF Product. / Applications PFC

9.4. Size:1213K blue-rocket-elect
brcs150n10sra.pdf

BRCS150N10SRA Rev.A Nov.-2021 DATA SHEET / Descriptions TO-220 N N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , Ultra Low On-Resistance,fast switching. / Applications PFC These d

9.5. Size:2733K blue-rocket-elect
brcs150c02ya.pdf

BRCS150C02YA Rev.A Feb.-2023 DATA SHEET / Descriptions PDFN33-8L Complementary Enhancement MOSFET in a PDFN33-8L Plastic Package. / Features N-channel P-channel VDS(V)=20V VDS(V)=-20V ID=28A ID=-25A RDS(ON)

9.6. Size:1521K blue-rocket-elect
brcs150p02mc.pdf

BRCS150P02MC Rev.B Mar.-2023 DATA SHEET / Descriptions SOT23-3 P MOS P- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features V (V) = -20V DSI = -7.0A DRDS(ON)@-4.5V17m(Type.15m) HF Product. / Applications Power Management in

9.7. Size:1040K blue-rocket-elect
brcs150n10sdp.pdf

BRCS150N10SDP Rev.A Feb.-2022 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching, HF Product. / Applications DC/

9.8. Size:966K blue-rocket-elect
brcs150p02zj.pdf

BRCS150P02ZJ Rev.A Apr.-2022 DATA SHEET / Descriptions DFN 22B-6L P MOS P-Channel Enhancement Mode Field Effect Transistor in a DFN 22B-6L Plastic Package. / Features VDS (V) = -20V ID = -11A RDS(ON)@-4.5V17m(Type.15m) HF Product. / Applications

9.9. Size:1031K blue-rocket-elect
brcs150n10szc.pdf

BRCS150N10SZC Rev.A Oct.-2021 DATA SHEET / Descriptions PDFN5*6 N N-Channel MOSFET in a PDFN5*6 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance. H

9.10. Size:3156K blue-rocket-elect
brcs150c016yn.pdf

BRCS150C016YN Rev.A Jul.-2023 DATA SHEET / Descriptions DFN22C-6L Complementary Enhancement MOSFET in a DFN22C-6L Plastic Package. / Features N-channel P-channel V =16V V =-16V DS(V) DS(V)I =8.4A I =-6.3A D DR DS(ON)@-4.5V25m(Typ.21mR) DS(ON)@4.5V15m(Typ.13mR) RR DS(ON)@-2.5V35m(Typ.28mR)

9.11. Size:1183K blue-rocket-elect
brcs150n12szc.pdf

BRCS150N12SZC Rev.A Jun.-2022 DATA SHEET / Descriptions PDFN56 N N-Channel MOSFET in a PDFN56 Plastic Package. / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance;H

9.12. Size:1067K blue-rocket-elect
brcs150p04dp.pdf

BRCS150P04DP Rev.A Mar.-2022 DATA SHEET / Descriptions TO-252 P P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching, Trench Technologies. HF Product. / Applications

9.13. Size:169K crhj
cs150n04 a8.pdf

Silicon N-Channel Power MOSFET R CS150N04 A8 General Description VDSS 40 V CS150N04 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 4 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switc

9.14. Size:390K crhj
cs150n03 a8.pdf

Silicon N-Channel Power MOSFET R CS150N03 A8 General Description VDSS 30 V CS150N03 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 2.8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw

9.15. Size:125K china
cs150.pdf

CS150 N PD TC=25 150 W 1.2 W/ ID VGS=10V,TC=25 38 A ID VGS=10V,TC=100 24 A IDM 152 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.83 /W BVDSS VGS=0V,ID=1.0mA 100 V VGS=10V,ID=24A 0.055 RDS on

9.16. Size:392K wuxi china
cs150n03a8.pdf

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS150N03A8 General Description VDSS 30 V CS150N03A8, the silicon N-channel Enhanced ID 150 A PD (TC=25) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 2.8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can b

9.17. Size:200K wuxi china
cs150n04a8.pdf