CS1506G datasheet, аналоги, основные параметры
Наименование производителя: CS1506G 📄📄
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 125 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 8 pf
Статический коэффициент передачи тока (hFE): 120
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Аналоги (замена) для CS1506G
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CS1506G даташит
9.2. Size:1071K blue-rocket-elect
brcs150n12sra.pdf 
BRCS150N12SRA Rev.A Feb.-2022 DATA SHEET / Descriptions TO-220 N N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , Ultra Low On-Resistance,fast switching. / Applications PFC These d
9.3. Size:1720K blue-rocket-elect
brcs150n10sbd.pdf 
BRCS150N10SBD Rev.A Jun.-2023 DATA SHEET / Descriptions TO-263 N N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features V =100V ; I =46A DS D R DSON@10V 15m (Type.14.8m ) R DSON@4.5V 25m (Type.20.4m ) HF Product. / Applications PFC
9.4. Size:1213K blue-rocket-elect
brcs150n10sra.pdf 
BRCS150N10SRA Rev.A Nov.-2021 DATA SHEET / Descriptions TO-220 N N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , Ultra Low On-Resistance,fast switching. / Applications PFC These d
9.5. Size:2733K blue-rocket-elect
brcs150c02ya.pdf 
BRCS150C02YA Rev.A Feb.-2023 DATA SHEET / Descriptions PDFN3 3-8L Complementary Enhancement MOSFET in a PDFN3 3-8L Plastic Package. / Features N-channel P-channel VDS(V)=20V VDS(V)=-20V ID=28A ID=-25A RDS(ON)
9.6. Size:1521K blue-rocket-elect
brcs150p02mc.pdf 
BRCS150P02MC Rev.B Mar.-2023 DATA SHEET / Descriptions SOT23-3 P MOS P- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features V (V) = -20V DS I = -7.0A D R DS(ON)@-4.5V 17m (Type.15m ) HF Product. / Applications Power Management in
9.7. Size:1040K blue-rocket-elect
brcs150n10sdp.pdf 
BRCS150N10SDP Rev.A Feb.-2022 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rss Low RDS(on),low gate charge, low Crss, fast switching, HF Product. / Applications DC/
9.9. Size:1031K blue-rocket-elect
brcs150n10szc.pdf 
BRCS150N10SZC Rev.A Oct.-2021 DATA SHEET / Descriptions PDFN5*6 N N-Channel MOSFET in a PDFN5*6 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance. H
9.10. Size:3156K blue-rocket-elect
brcs150c016yn.pdf 
BRCS150C016YN Rev.A Jul.-2023 DATA SHEET / Descriptions DFN2 2C-6L Complementary Enhancement MOSFET in a DFN2 2C-6L Plastic Package. / Features N-channel P-channel V =16V V =-16V DS(V) DS(V) I =8.4A I =-6.3A D D R DS(ON)@-4.5V 25m (Typ.21mR) DS(ON)@4.5V 15m (Typ.13mR) R R DS(ON)@-2.5V 35m (Typ.28mR)
9.11. Size:1183K blue-rocket-elect
brcs150n12szc.pdf 
BRCS150N12SZC Rev.A Jun.-2022 DATA SHEET / Descriptions PDFN5 6 N N-Channel MOSFET in a PDFN5 6 Plastic Package. / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance;H
9.13. Size:169K crhj
cs150n04 a8.pdf 
Silicon N-Channel Power MOSFET R CS150N04 A8 General Description VDSS 40 V CS150N04 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25 ) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 4 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switc
9.14. Size:390K crhj
cs150n03 a8.pdf 
Silicon N-Channel Power MOSFET R CS150N03 A8 General Description VDSS 30 V CS150N03 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25 ) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 2.8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw
9.16. Size:392K wuxi china
cs150n03a8.pdf 
Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS150N03A8 General Description VDSS 30 V CS150N03A8, the silicon N-channel Enhanced ID 150 A PD (TC=25 ) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 2.8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can b
9.17. Size:200K wuxi china
cs150n04a8.pdf 
Silicon N-Channel Power MOSFET R CS150N04 A8 General Description VDSS 40 V CS150N04 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25 ) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 4 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switc
Другие транзисторы: CS1251E, CS1251F, CS1303, CS1312F, CS1312G, CS1312H, CS1312I, CS1506F, D209L, CS1508E, CS1508F, CS1508G, CS1509E, CS1509F, CS1613, CS1659, CS1660
