CS6305A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS6305A
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hfe): 120
Búsqueda de reemplazo de transistor bipolar CS6305A
CS6305A Datasheet (PDF)
jcs630va jcs630ra jcs630va jcs630ba jcs630sa jcs630fa jcs630ca.pdf
N N- CHANNEL MOSFET R JCS630A MAIN CHARACTERISTICS Package ID 9.0A VDSS 200 V Rdson-max 0.4 @Vgs=10V Qg-typ 22nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge
jcs630va jcs630ra jcs630ba jcs630sa jcs630ca jcs630fa.pdf
N N- CHANNEL MOSFET R JCS630A MAIN CHARACTERISTICS Package ID 9.0A VDSS 200 V Rdson-max 0.4 @Vgs=10V Qg-typ 22nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge
brcs630fa.pdf
BRCS630FA Rev.A Sep.-2023 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features V =200VI =9A DS DRDS(on)@10V0.4(Type.0.35) HF Product. / Applications LED Networking,Load Switch,LED applications.
cs630 a8h.pdf
Silicon N-Channel Power MOSFET R CS630 A8H General Description VDSS 200 V CS630 A8H, the silicon N-channel Enhanced ID 9 A PD(TC=25) 83 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.23 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw
cs630 a3h.pdf
Silicon N-Channel Power MOSFET R CS630 A3H General Description VDSS 200 V CS630 A3H, the silicon N-channel Enhanced VDMOSFETs, is ID 9 A PD(TC=25) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.23 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi
cs630 a4h.pdf
Silicon N-Channel Power MOSFET R CS630 A4H General Description VDSS 200 V CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is ID 9 A PD(TC=25) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.23 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi
cs630f a9h.pdf
Silicon N-Channel Power MOSFET R CS630F A9H General Description VDSS 200 V CS630F A9H, the silicon N-channel Enhanced ID 9 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.23 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs630.pdf
IRF630(CS630) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25)
cs630d.pdf
BRD630(CS630D) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25)
cs630f.pdf
IRFS630(CS630F) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25)
cs630a3h.pdf
Silicon N-Channel Power MOSFET R CS630 A3H General Description VDSS 200 V CS630 A3H, the silicon N-channel Enhanced VDMOSFETs, is ID 9 A PD(TC=25) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.23 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi
cs630fa9h.pdf
Silicon N-Channel Power MOSFET R CS630F A9H General Description VDSS 200 V CS630F A9H, the silicon N-channel Enhanced VDMOSFETs, is ID 9 A PD(TC=25) 30 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.23 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs630a4h.pdf
Silicon N-Channel Power MOSFET R CS630 A4H General Description VDSS 200 V CS630 A4H, the silicon N-channel Enhanced ID 9 A PD(TC=25) 83 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.23 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi
cs630a8h.pdf
Silicon N-Channel Power MOSFET R CS630 A8H General Description VDSS 200 V CS630 A8H, the silicon N-channel Enhanced ID 9 A PD(TC=25) 83 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.23 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050