CXT5401 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CXT5401
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.2 W
Tensión colector-base (Vcb): 160 V
Tensión colector-emisor (Vce): 150 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 6 pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: SOT-89
Búsqueda de reemplazo de transistor bipolar CXT5401
CXT5401 Datasheet (PDF)
cxt5401.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89-3L Plastic-Encapsulate Transistors CXT5401 TRANSISTOR (PNP) SOT-89-3L FEATURE 1. BASE Switching and amplification in high voltage 1 1 Applications such as telephony Low current(max. 500mA) 2 2 2. COLLECTOR High voltage(max.160v) 3 3. EMITTER 5401MAXIMUM RATINGS (Ta=25 unless otherwi
cxt5401.pdf
CXT5401TRANSISTOR (PNP) SOT-89 FEATURE Switching and amplification in high voltage 1. BASE Applications such as telephony 1 1 Low current(max. 500mA) High voltage(max.160v) 2 2 2. COLLECTOR 3 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V
cxt5401.pdf
SMD Type TransistorsPNP Transistors CXT5401 (KXT5401) Features1.70 0.1 Switching and amplification in high voltage Applications such as telephony Low current(max. 500mA) High voltage(max.160v)0.42 0.10.46 0.1 Comlementary to CXT55511.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base V
cxt5401e.pdf
CXT5401Ewww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CXT5401E is a PNP Silicon Transistor, packaged in an SOT-89 case, designed for general purpose amplifier applications requiring high breakdown voltage.MARKING: FULL PART NUMBERFEATURES: High Collector Breakdown Voltage: 250VSOT-89 CASE Low L
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: KC856S
History: KC856S
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050