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CXT5401 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CXT5401
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1.2 W
   Tensión colector-base (Vcb): 160 V
   Tensión colector-emisor (Vce): 150 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 6 pF
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: SOT-89
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CXT5401 Datasheet (PDF)

 ..1. Size:1586K  jiangsu
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CXT5401

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89-3L Plastic-Encapsulate Transistors CXT5401 TRANSISTOR (PNP) SOT-89-3L FEATURE 1. BASE Switching and amplification in high voltage 1 1 Applications such as telephony Low current(max. 500mA) 2 2 2. COLLECTOR High voltage(max.160v) 3 3. EMITTER 5401MAXIMUM RATINGS (Ta=25 unless otherwi

 ..2. Size:608K  htsemi
cxt5401.pdf pdf_icon

CXT5401

CXT5401TRANSISTOR (PNP) SOT-89 FEATURE Switching and amplification in high voltage 1. BASE Applications such as telephony 1 1 Low current(max. 500mA) High voltage(max.160v) 2 2 2. COLLECTOR 3 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V

 ..3. Size:1165K  kexin
cxt5401.pdf pdf_icon

CXT5401

SMD Type TransistorsPNP Transistors CXT5401 (KXT5401) Features1.70 0.1 Switching and amplification in high voltage Applications such as telephony Low current(max. 500mA) High voltage(max.160v)0.42 0.10.46 0.1 Comlementary to CXT55511.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base V

 0.1. Size:290K  central
cxt5401e.pdf pdf_icon

CXT5401

CXT5401Ewww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CXT5401E is a PNP Silicon Transistor, packaged in an SOT-89 case, designed for general purpose amplifier applications requiring high breakdown voltage.MARKING: FULL PART NUMBERFEATURES: High Collector Breakdown Voltage: 250VSOT-89 CASE Low L

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History: BUJ303AX | 2G304 | CHDTA143TEGP | 3DG12 | 3CA1274 | DTA115EEFRA

 

 
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