CZT127 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CZT127
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4 MHz
Ganancia de corriente contínua (hfe): 1000
Paquete / Cubierta: SOT223
Búsqueda de reemplazo de transistor bipolar CZT127
CZT127 Datasheet (PDF)
czt122 czt127.pdf
CZT122 NPNCZT127 PNPwww.centralsemi.comSURFACE MOUNTDESCRIPTION:COMPLEMENTARY SILICONThe CENTRAL SEMICONDUCTOR CZT122, CZT127 POWER DARLINGTON TRANSISTORStypes are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed switching and amplifier applications.MARKING: FULL PART NUMBERSOT-223 CASESOT-223 CASEMAX
czt127.pdf
CZT127 SOT-223 Transistor(PNP)1. BASE SOT-2232. COLLECTOR 1 3. EMITTER Features Complementary to CZT122 Silicon Power Darlington Transistors Low speed switching and amplifier applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -100 VVCEO Collector-Emitter Voltage -100 VDimensions in inches and (
czt127.pdf
SMD Type TransistorsPNP TransistorsCZT127 (KZT127)Unit:mmSOT-2236.500.23.000.1 Features4 Silicon Power Darlington Transistors Low speed switching and amplifier applications Complementary to CZT1221 2 30.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Paramete
czt122.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors SOT-223 CZT122 TRANSISTOR (NPN)FEATURES Complementary to CZT1271. BASE Silicon Power Darlington Transistors2. COLLECTOR Low speed switching and amplifier applications3. EMITTERMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit100VCBO Collector-Base Vo
czt122.pdf
CZT122 SOT-223 Transistor(NPN)1. BASE 2. COLLECTOR SOT-223 1 3. EMITTER Features Complementary to CZT127 Silicon Power Darlington Transistors Low speed switching and amplifier applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 100 VVCEO Collector-Emitter Voltage 100 VDimensions in inches and (mi
czt122.pdf
SMD Type TransistorsNPN TransistorsCZT122 (KZT122)Unit:mmSOT-2236.500.23.000.14 Features Silicon Power Darlington Transistors Low speed switching and amplifier applications1 2 3 Complementary to CZT1270.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Paramete
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: 2SAB38
History: 2SAB38
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050