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CZT127 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CZT127
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 2 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 4 MHz
   Ganancia de corriente contínua (hfe): 1000
   Paquete / Cubierta: SOT223

 Búsqueda de reemplazo de transistor bipolar CZT127

 

CZT127 Datasheet (PDF)

 ..1. Size:597K  central
czt122 czt127.pdf

CZT127 CZT127

CZT122 NPNCZT127 PNPwww.centralsemi.comSURFACE MOUNTDESCRIPTION:COMPLEMENTARY SILICONThe CENTRAL SEMICONDUCTOR CZT122, CZT127 POWER DARLINGTON TRANSISTORStypes are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed switching and amplifier applications.MARKING: FULL PART NUMBERSOT-223 CASESOT-223 CASEMAX

 ..2. Size:188K  lge
czt127.pdf

CZT127 CZT127

CZT127 SOT-223 Transistor(PNP)1. BASE SOT-2232. COLLECTOR 1 3. EMITTER Features Complementary to CZT122 Silicon Power Darlington Transistors Low speed switching and amplifier applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -100 VVCEO Collector-Emitter Voltage -100 VDimensions in inches and (

 ..3. Size:300K  kexin
czt127.pdf

CZT127

SMD Type TransistorsPNP TransistorsCZT127 (KZT127)Unit:mmSOT-2236.500.23.000.1 Features4 Silicon Power Darlington Transistors Low speed switching and amplifier applications Complementary to CZT1221 2 30.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Paramete

 9.1. Size:665K  jiangsu
czt122.pdf

CZT127 CZT127

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors SOT-223 CZT122 TRANSISTOR (NPN)FEATURES Complementary to CZT1271. BASE Silicon Power Darlington Transistors2. COLLECTOR Low speed switching and amplifier applications3. EMITTERMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit100VCBO Collector-Base Vo

 9.2. Size:197K  lge
czt122.pdf

CZT127 CZT127

CZT122 SOT-223 Transistor(NPN)1. BASE 2. COLLECTOR SOT-223 1 3. EMITTER Features Complementary to CZT127 Silicon Power Darlington Transistors Low speed switching and amplifier applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 100 VVCEO Collector-Emitter Voltage 100 VDimensions in inches and (mi

 9.3. Size:304K  kexin
czt122.pdf

CZT127

SMD Type TransistorsNPN TransistorsCZT122 (KZT122)Unit:mmSOT-2236.500.23.000.14 Features Silicon Power Darlington Transistors Low speed switching and amplifier applications1 2 3 Complementary to CZT1270.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Paramete

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