D40N1 Todos los transistores

 0.1. Size:140K  vishay
 sud40n10.pdf

SUD40N10-25 Vishay Siliconix N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Available 175 C Maximum Junction Temperature 0.025 at VGS = 10 V 40 RoHS* 100 100 % Rg Tested 0.028 at VGS = 4.5 V COMPLIANT 38 TO-252 D G Drain Connected to Tab G D S Top View S Ordering Information SUD40N1

 0.2. Size:172K  vishay
 sqd40n10-25.pdf

SQD40N10-25 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 100 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.025 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.029 AEC-Q101 Qualified ID (A) 40 Material categorization Configuration Single

 0.3. Size:140K  vishay
 sud40n10-25.pdf

SUD40N10-25 Vishay Siliconix N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Available 175 C Maximum Junction Temperature 0.025 at VGS = 10 V 40 RoHS* 100 100 % Rg Tested 0.028 at VGS = 4.5 V COMPLIANT 38 TO-252 D G Drain Connected to Tab G D S Top View S Ordering Information SUD40N1

 0.4. Size:2414K  secos
 ssd40n10-30d.pdf

SSD40N10-30D 26A, 100V, RDS(ON) 36m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free FEATURES TO-252(D-Pack) Low RDS(on) trench technology. Low thermal impedance. Fast switching speed. APPLICATION PoE Power Sourcing Equipment. A C B PoE Powered Devices. D Telecom DC/DC converte

 0.5. Size:405K  cet
 ceu40n10 ced40n10.pdf

CED40N10/CEU40N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 37A, RDS(ON) = 32m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless oth

 0.6. Size:1509K  winsok
 wsd40n10gdn56.pdf

WSD40N10GDN56 N-Ch MOSFET General Description Product Summery The WSD40N10GDN56 is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON 100V 16m 40A and gate charge for most of the synchronous buck converter applications . Applications The WSD40N10GDN56 meet the RoHS and Green Power Management in TV Co

 0.7. Size:867K  cn vbsemi
 sud40n10-25.pdf

SUD40N10-25 www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 37 COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, un