SUD40N10-25Vishay SiliconixN-Channel 100-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)Available 175 C Maximum Junction Temperature0.025 at VGS = 10 V 40RoHS*100 100 % Rg Tested0.028 at VGS = 4.5 V COMPLIANT38TO-252 DGDrain Connected to Tab G D S Top View SOrdering Information: SUD40N1

SQD40N10-25www.vishay.comVishay SiliconixAutomotive N-Channel 100 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 100 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.025 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.029 AEC-Q101 QualifiedID (A) 40 Material categorization:Configuration Single

SUD40N10-25Vishay SiliconixN-Channel 100-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)Available 175 C Maximum Junction Temperature0.025 at VGS = 10 V 40RoHS*100 100 % Rg Tested0.028 at VGS = 4.5 V COMPLIANT38TO-252 DGDrain Connected to Tab G D S Top View SOrdering Information: SUD40N1

SSD40N10-30D 26A, 100V, RDS(ON) 36m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free FEATURES TO-252(D-Pack) Low RDS(on) trench technology. Low thermal impedance. Fast switching speed. APPLICATION PoE Power Sourcing Equipment. ACB PoE Powered Devices. D Telecom DC/DC converte

CED40N10/CEU40N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 37A, RDS(ON) = 32m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless oth

WSD40N10GDN56 N-Ch MOSFETGeneral Description Product SummeryThe WSD40N10GDN56 is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON 100V 16m 40Aand gate charge for most of the synchronous buck converter applications . Applications The WSD40N10GDN56 meet the RoHS and Green Power Management in TV Co

SUD40N10-25www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, un