D45C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: D45C
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 90 V
Tensión colector-emisor (Vce): 90 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 40 MHz
Capacitancia de salida (Cc): 125 pF
Ganancia de corriente contínua (hfe): 125
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar D45C
D45C Datasheet (PDF)
d45c d45c series.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors D45C Series DESCRIPTION With TO-220 package Complement to type D44C Series Very low collector saturation voltage Fast switching APPLICATIONS Designed for various specific and general purpose application Shunt and switching regulators Low and high frequency inverters converters and et
d45crev0.pdf
Order this documentMOTOROLAby D45C/DSEMICONDUCTOR TECHNICAL DATAPNPD45CComplementary Silicon PowerTransistor4.0 AMPERE. . . for general purpose driver or medium power output stages in CW or switchingCOMPLEMENTARYapplications.SILICONPOWER TRANSISTORS Low CollectorEmitter Saturation Voltage 0.5 V (Max)80 VOLTS High ft for Good Frequency Response L
d45c11.pdf
January 2010D45C11PNP Current Driver TransistorFeatures This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5P. NZT751 for characteristics.TO-22011. Base 2. Collector 3. EmitterAbsolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Vo
d45c8.pdf
January 2010D45C8PNP Power Amplifier Sourced from process 5P.TO-22011. Base 2. Collector 3. EmitterAbsolute Maximum Ratings TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -60 VIC Collector Current - Continuous -4.0 ATJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 CElectrical Characteristics TA=25C
d45c12 d44c12.pdf
D45C12 (PNP),D44C12 (NPN)Complementary SiliconPower TransistorThe D45C12 and D44C12 are for general purpose driver ormedium power output stages in CW or switching applications. http://onsemi.comFeatures4.0 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage - 0.5 V (Max)SILICON POWER High ft for Good Frequency Response Low Leakage Current TRANSISTORS 80
d45c8.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors D45C8 DESCRIPTION Low Saturation Voltage Good Linearity of hFEFast Switching Speeds Complement to Type D44C8 APPLICATIONS Designed for various specific and general purpose application such as: output and driver stages of amplifiers operating at frequencies from DC to greater than 1.0
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
