All Transistors. D45C Datasheet

 

D45C Datasheet, Equivalent, Cross Reference Search


   Type Designator: D45C
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 90 V
   Maximum Collector-Emitter Voltage |Vce|: 90 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 40 MHz
   Collector Capacitance (Cc): 125 pF
   Forward Current Transfer Ratio (hFE), MIN: 125
   Noise Figure, dB: -
   Package: TO220

 D45C Transistor Equivalent Substitute - Cross-Reference Search

   

D45C Datasheet (PDF)

 ..1. Size:119K  inchange semiconductor
d45c d45c series.pdf

D45C
D45C

Inchange Semiconductor Product Specification Silicon PNP Power Transistors D45C Series DESCRIPTION With TO-220 package Complement to type D44C Series Very low collector saturation voltage Fast switching APPLICATIONS Designed for various specific and general purpose application Shunt and switching regulators Low and high frequency inverters converters and et

 0.1. Size:94K  motorola
d45crev0.pdf

D45C
D45C

Order this documentMOTOROLAby D45C/DSEMICONDUCTOR TECHNICAL DATAPNPD45CComplementary Silicon PowerTransistor4.0 AMPERE. . . for general purpose driver or medium power output stages in CW or switchingCOMPLEMENTARYapplications.SILICONPOWER TRANSISTORS Low CollectorEmitter Saturation Voltage 0.5 V (Max)80 VOLTS High ft for Good Frequency Response L

 0.2. Size:95K  fairchild semi
d45c11.pdf

D45C
D45C

January 2010D45C11PNP Current Driver TransistorFeatures This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5P. NZT751 for characteristics.TO-22011. Base 2. Collector 3. EmitterAbsolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Vo

 0.3. Size:138K  fairchild semi
d45c8.pdf

D45C
D45C

January 2010D45C8PNP Power Amplifier Sourced from process 5P.TO-22011. Base 2. Collector 3. EmitterAbsolute Maximum Ratings TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -60 VIC Collector Current - Continuous -4.0 ATJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 CElectrical Characteristics TA=25C

 0.4. Size:73K  onsemi
d45c12 d44c12.pdf

D45C
D45C

D45C12 (PNP),D44C12 (NPN)Complementary SiliconPower TransistorThe D45C12 and D44C12 are for general purpose driver ormedium power output stages in CW or switching applications. http://onsemi.comFeatures4.0 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage - 0.5 V (Max)SILICON POWER High ft for Good Frequency Response Low Leakage Current TRANSISTORS 80

 0.5. Size:134K  inchange semiconductor
d45c8.pdf

D45C
D45C

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors D45C8 DESCRIPTION Low Saturation Voltage Good Linearity of hFEFast Switching Speeds Complement to Type D44C8 APPLICATIONS Designed for various specific and general purpose application such as: output and driver stages of amplifiers operating at frequencies from DC to greater than 1.0

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: DTC117 | 3CG937 | FMMT5088

 

 
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