D45C10 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: D45C10

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 90 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 20 MHz

Capacitancia de salida (Cc): 125 pF

Ganancia de corriente contínua (hFE): 25

Encapsulados: TOP66

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D45C10 datasheet

 9.1. Size:95K  fairchild semi
 d45c11.pdf pdf_icon

D45C10

January 2010 D45C11 PNP Current Driver Transistor Features This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5P. NZT751 for characteristics. TO-220 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Vo

 9.2. Size:73K  onsemi
 d45c12 d44c12.pdf pdf_icon

D45C10

D45C12 (PNP), D44C12 (NPN) Complementary Silicon Power Transistor The D45C12 and D44C12 are for general purpose driver or medium power output stages in CW or switching applications. http //onsemi.com Features 4.0 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage - 0.5 V (Max) SILICON POWER High ft for Good Frequency Response Low Leakage Current TRANSISTORS 80

Otros transistores... D44VM4, D44VM5, D44VM6, D44VM7, D44VM8, D44VM9, D45C, D45C1, 2N5401, D45C11, D45C12, D45C2, D45C3, D45C4, D45C5, D45C6, D45C7