D45C11 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: D45C11
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 90 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20 MHz
Capacitancia de salida (Cc): 125 pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TOP66
Búsqueda de reemplazo de transistor bipolar D45C11
D45C11 Datasheet (PDF)
d45c11.pdf
January 2010D45C11PNP Current Driver TransistorFeatures This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5P. NZT751 for characteristics.TO-22011. Base 2. Collector 3. EmitterAbsolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Vo
d45c12 d44c12.pdf
D45C12 (PNP),D44C12 (NPN)Complementary SiliconPower TransistorThe D45C12 and D44C12 are for general purpose driver ormedium power output stages in CW or switching applications. http://onsemi.comFeatures4.0 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage - 0.5 V (Max)SILICON POWER High ft for Good Frequency Response Low Leakage Current TRANSISTORS 80
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
