D45C11 Specs and Replacement
Type Designator: D45C11
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 90 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 125 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TOP66
D45C11 Substitution
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D45C11 datasheet
January 2010 D45C11 PNP Current Driver Transistor Features This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5P. NZT751 for characteristics. TO-220 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Vo... See More ⇒
D45C12 (PNP), D44C12 (NPN) Complementary Silicon Power Transistor The D45C12 and D44C12 are for general purpose driver or medium power output stages in CW or switching applications. http //onsemi.com Features 4.0 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage - 0.5 V (Max) SILICON POWER High ft for Good Frequency Response Low Leakage Current TRANSISTORS 80... See More ⇒
Detailed specifications: D44VM5, D44VM6, D44VM7, D44VM8, D44VM9, D45C, D45C1, D45C10, 2N3055, D45C12, D45C2, D45C3, D45C4, D45C5, D45C6, D45C7, D45C8
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History: D42CU6 | D45C4 | D45C3
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