DM30P Todos los transistores

 

DM30P . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DM30P
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 35 W
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1000 MHz

 Búsqueda de reemplazo de transistor bipolar DM30P

 

DM30P Datasheet (PDF)

 0.1. Size:435K  1
asdm30p30ctd-r.pdf

DM30P
DM30P

ASDM30P30CTD-30V P-Channel MOSFETFeaturesProduct Summary Low RDS(ON) Fast switchingV -30 V DSS Green Device AvailableR 15 mDS(ON)-Typ.ApplicationI -30 A D MB / VGA / Vcore POL ApplicationsDFN3*3-8 P-MOSFETAbsolute Maximum Ratings (T =25C Unless Otherwise Noted)JSymbol Parameter Rating Unit VDSS Drain-Source Voltage -30 V VGSS Gate-

 0.2. Size:577K  1
asdm30p30ctd.pdf

DM30P
DM30P

ASDM30P30CTD-30V P-Channel MOSFETFeaturesProduct Summary Low RDS(ON) Fast switchingV -30 V DSS Green Device AvailableR 15 mDS(ON)-Typ.ApplicationI -30 A D MB / VGA / Vcore POL ApplicationsDFN3*3-8 P-MOSFETAbsolute Maximum Ratings (T =25C Unless Otherwise Noted)JSymbol Parameter Rating Unit VDSS Drain-Source Voltage -30 V VGSS Gate-

 0.3. Size:514K  1
asdm30p11td-r.pdf

DM30P
DM30P

ASDM30P11TD-30V P-Channel MOSFETProduct SummaryFeatures Low FOM RDS(on)Qgd 100% avalanche testedV DS -30 V Easy to use/drive RoHS compliantR DS(on),TYP@ VGS=10 V 6.4 mI D -55 AApplication Power Switch Circuit of Adaptor and Charger Battery Protection Charge/Discharge Notebook AC-in Load SwitchPDFN3*3-8Absolute Maximum Ratings TA = 25 u

 0.4. Size:435K  ascend
asdm30p30ctd.pdf

DM30P
DM30P

ASDM30P30CTD-30V P-Channel MOSFETFeaturesProduct Summary Low RDS(ON) Fast switchingV -30 V DSS Green Device AvailableR 15 mDS(ON)-Typ.ApplicationI -30 A D MB / VGA / Vcore POL ApplicationsDFN3*3-8 P-MOSFETAbsolute Maximum Ratings (T =25C Unless Otherwise Noted)JSymbol Parameter Rating Unit VDSS Drain-Source Voltage -30 V VGSS Gate-

 0.5. Size:514K  ascend
asdm30p11td.pdf

DM30P
DM30P

ASDM30P11TD-30V P-Channel MOSFETProduct SummaryFeatures Low FOM RDS(on)Qgd 100% avalanche testedV DS -30 V Easy to use/drive RoHS compliantR DS(on),TYP@ VGS=10 V 6.4 mI D -55 AApplication Power Switch Circuit of Adaptor and Charger Battery Protection Charge/Discharge Notebook AC-in Load SwitchPDFN3*3-8Absolute Maximum Ratings TA = 25 u

 0.6. Size:418K  ascend
asdm30p09zb.pdf

DM30P
DM30P

ASDM30P09ZB-30V P-Channel MOSFETProduct SummaryGeneral Features R

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
Back to Top

 


DM30P
  DM30P
  DM30P
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050

 

 

 
Back to Top