2N3506 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N3506 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 60 MHz
Capacitancia de salida (Cc): 40 pF
Ganancia de corriente contínua (hFE): 30
Encapsulados: TO5
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2N3506 datasheet
..1. Size:45K semicoa
2n3506.pdf 
Data Sheet No. 2N3506 Generic Part Number Type 2N3506 2N3506 Geometry 1506 Polarity NPN REF MIL-PRF-19500/349 Qual Level JAN - JANTXV Features General-purpose silicon transistor for switching and amplifier appli- cations. Housed in TO-39 case. Also available in chip form using the 1506 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/349 whic
0.1. Size:90K microsemi
2n3506al.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 DEVICES LEVELS JAN 2N3506 2N3507 JANTX 2N3506A 2N3507A JANTXV 2N3506L 2N3507L 2N3506AL 2N3507AL ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) P
0.2. Size:90K microsemi
2n3506a.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 DEVICES LEVELS JAN 2N3506 2N3507 JANTX 2N3506A 2N3507A JANTXV 2N3506L 2N3507L 2N3506AL 2N3507AL ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) P
9.1. Size:67K central
2n3500-2n3501.pdf
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824
9.2. Size:11K semelab
2n3509csm.pdf
2N3509CSM Dimensions in mm (inches). Bipolar NPN Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31 rad. (0.012) Ceramic Surface Mount 3 Package for High Reliability Applications 21 1.91 0.10 (0.075 0.004) A 0.31 rad. Bipolar NPN Device. (0.012) 3.05 0.13 (0.12 0.005) 1.40 (0.055) 1.02 0.10 max. VCEO = 20V A = (0.04 0.004
9.3. Size:10K semelab
2n3509dcsm.pdf
2N3509DCSM Dimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar NPN Devices. A 0.23 6 5 rad. (0.009) V = 20V CEO 6.22 0.13 A = 1.27 0.13 I = 0.5A C (0.0
9.4. Size:23K semelab
2n3502 2n3503 2n3504 2n3505.pdf
2N3502 2N3503 2N3504 2N3505 MECHANICAL DATA PNP SILICON PLANAR EPITAXIAL Dimensions in mm (inches) 5.84 (0.230) TRANSISTORS 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) FEATURES 0.48 (0.019) 0.41 (0.016) SILICON PLANAR EPITAXIAL PNP dia. TRANSISTOR 2.54 (0.100) Nom. 3 1 2 TO18 METAL PACKAGE PIN 1 Emitter PIN 2 Base PIN 3 Collector
9.5. Size:310K cdil
2n3498 99 2n3500 01.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR RF TRANSISTORS 2N3498, 2N3499, 2N3500, 2N3501 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION 2N3498 2N3500 UNITS 2N3499 2N3501 VCEO Collector Emitter Voltage 100 150 V VCBO Collector Base Voltage 100
9.6. Size:90K microsemi
2n3507a.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 DEVICES LEVELS JAN 2N3506 2N3507 JANTX 2N3506A 2N3507A JANTXV 2N3506L 2N3507L 2N3506AL 2N3507AL ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) P
9.7. Size:106K microsemi
2n3501ub.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/366 DEVICES LEVELS JANSM 3K Rads (Si) 2N3498 2N3499 2N3500 2N3501 JANSD 10K Rads (Si) 2N3498L 2N3499L 2N3500L 2N3501L JANSP 30K Rads (Si)
9.8. Size:90K microsemi
2n3507al.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 DEVICES LEVELS JAN 2N3506 2N3507 JANTX 2N3506A 2N3507A JANTXV 2N3506L 2N3507L 2N3506AL 2N3507AL ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) P
9.9. Size:106K microsemi
2n3500l.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/366 DEVICES LEVELS JANSM 3K Rads (Si) 2N3498 2N3499 2N3500 2N3501 JANSD 10K Rads (Si) 2N3498L 2N3499L 2N3500L 2N3501L JANSP 30K Rads (Si)
9.10. Size:46K semicoa
2n3507.pdf
Data Sheet No. 2N3507 Generic Part Number Type 2N3507 2N3507 Geometry 1506 Polarity NPN REF MIL-PRF-19500/349 Qual Level JAN - JANTXV Features General-purpose silicon transistor for switching and amplifier appli- cations. Housed in TO-39 case. Also available in chip form using the 1506 chip geometry. The Min and Max limits shown are TO-39 per MIL-PRF-19500/3
Otros transistores... 2N3501CSM4, 2N3501DCSM, 2N3501L, 2N3501S, 2N3502, 2N3503, 2N3504, 2N3505, BD136, 2N3506L, 2N3506S, 2N3507, 2N3507L, 2N3507S, 2N3507X, 2N3508, 2N3509
